# Power MOSFET, P Channel, 100 V, 990 mA, 1.7754 ohm, SOT-223, Surface Mount

![Product image](https://novapart.co/image/farnell:3873740/)

**URL**: https://novapart.co/products/ISP20EP10LMXTSA1/power-mosfet-p-channel-100-v-990-ma-17754-ohm-sot
**SKU**: ISP20EP10LMXTSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1040
**Stock**: 1000+
**Lead Time**: 113 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 4Pins |
| Channel Type | P Channel |
| Product Range | OptiMOS Series |
| Qualification | - |
| Power Dissipation | 4.2W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-223 |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 990mA |
| Drain Source On State Resistance | 1.7754ohm |
| Gate Source Threshold Voltage Max | 1.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3873740/)

om. Cinfineone@ 

ISP20EP10LM 

## OptiMOS™ Power- ~~T~~ ransistor, ~~-~~ 100 V 

## Features 

* P ~~-~~ channel 

- ¢ Very low on ~~-r~~ esistance Rps(on) @Ves=4 ~~.~~ 5 V 

- ¢ Enhancement mode 

- 100% avalanche tested 

- Logic level 

- Pb ~~-f~~ ree lead plating; ROHS compliant 

- Halogen ~~-f~~ ree according to IEC61249 ~~-2-2~~ 1 

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PG -S OT223 -4<br>4<br>~~)<br>bel<br> @ a<br>, =<br>**----- End of picture text -----**<br>


## Product validation 

Fully qualified according to JEDEC for Industrial Applications 

Table 1 Key Performance Parameters 

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~~ISP20EP10LM~~ 

~~PG-SOT223-4~~ 

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rain<br>Pin 2,4<br>on<br>(2)<br>@ ROHS<br>**----- End of picture text -----**<br>


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20EPioLM |-<br>**----- End of picture text -----**<br>


Final Data Sheet 

1 

Rev ~~.~~ 2 ~~.~~ 0, 2021 ~~-0~~ 5 ~~-~~ 10 

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OptiMOS™ Power- ~~T~~ ransistor, ~~-~~ 100 V 

ISP20EP10LM 

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1 Maximum ratings at Ta=25 °C, unless otherwise specified 

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Table 2_—/ Maximum ratings<br>p aramet er symbol Note/ Test Conditi<br>ymbo Min. _| ote / Test Condition<br>Typ. [Max._<br>- 0.99 Ves= - 10 V, Tc=25 °C<br>Continuous drain current” lp o e A y a n te 00 S<br>- 0.65 Ves= - 10 V, Ta=25°C, Rinsa=70°C/W”)<br>Avalanche energy, single pulse’) lens =e set | Ip=-0.6 A, Res=25 Q<br>Operating and storage temperature Tita 858 | 150 fro |had eens category; DIN IEC 68-1:<br>2 Thermal characteristics<br>Table 3_— Thermal characteristics<br>p aramet er symbol Note/ Test Condit<br>ymbo min. _| ote / Test Condition<br>Typ. [Max._<br>Thermal resistance, junction - case Rc =e e830 -<br>Thermal resistance, junction - ambient, °<br>6 cm? cooling area Pon ff o_o<br>**----- End of picture text -----**<br>


> ‘) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature as specified ~~.~~ For other case temperatures please refer to Diagram 2 ~~.~~ De ~~-r~~ ating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm? (one layer, 70 um thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information Final Data Sheet 3 Rev ~~.~~ 2 ~~.~~ 0, 

Rev ~~.~~ 2 ~~.~~ 0, 2021 ~~-0~~ 5 ~~-~~ 10 

om C | n fie@ neon 

OptiMOS™ Power- ~~T~~ ransistor, ~~-~~ 100 V 

## ISP20EP10LM 

## 3 Electrical characteristics 

at Tj=25 °C, unless otherwise specified 

## Table 4 Static characteristics 

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|||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|m|aramet|er|Symbol,ymbo|Min.|_|aeTyp.|[Max._it|N|o|te /I|TeTe t|s|t|ConditionCondit|
|Drain-source|breakdown|voltage|[Veross||-t100||-|[-|ve|Ves=0|V,|Ib=-1|mA|
|Gate|threshold|voltage|Vos= Ves,|lo|=-|78|WA|
|Zero|.|-0.1|-1.0|Vos=|-|100|V,|Ves=0|V,|Tj=25|°C|
|gate voage chain current|eee|ee Vos=|-|100 V,|Ves=0 V,|Ti-125 °C|
|Gate-source|leakage|current|ess||e|[40|[100|[nA|Ves=-20|V,|Vos=0|V|
|.|.|1775|.|4||2000|Ves=|-|10|V,|Ip=|-|0|.|6|A|
|Drain-source|on-state|resistance|Rosny|1864.4|12200|Vas=-4.5|V,|In=-0.5|A|
|Transconductance|lo|||fra|ls||||Vos|22|/p|Rosconymax,|[p>=-0.6|A|
|Table|5|Dynamic|characteristics|
|p|aramet|er|Symbotymbo|fg,Min.||eaeTyp.|[Max._lumiote /I|TeTe t|s|t|ConditionCondit|
|Input|capacitance”)|Css||=|«f480«([170|pF|Ves=0|V,|Vos=-50|V,|1|MHz|
|Reverse|transfer|capacitance”|Css|[edd|Ves=0|V,|Vos=-50|V,|1|MHz|
|sext™|T.|
|.|.|Vpp=|-|50|V,|Ves=|-1|0|V,|lp=|-|0|.|6|A,|
|.|Vop=|-|50|V,|Ves=|-|10|V,|Ip=|-|0|.|6|A,|
|.|Vpp=|-|50|V,|Ves=|-1|0|V,|lp=|-|0|.|6|A,|

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## Table 5 Dynamic characteristics 

") Defined by design. Not subject to production test. Final Data Sheet 

4 

Rev ~~.~~ 2 ~~.~~ 0, 2021 ~~-0~~ 5 ~~-~~ 10 

OptiMOS™ Power- ~~T~~ ransistor, ~~-~~ 100 V 

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## ISP20EP10LM 

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||||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Table|6|Gate|charge|characteristics”)|
|m|aramet|er|symbol,ymbo|Min,Tye.aes_[Max._|umnote /||TeTe t|s|t|ConditionCondit|
|cucumentens|fam|fwpe|Raa|
|.|.|Vpp=|-|50|V,|lp=|-|0.6 A,|
|Gate|2)|.|7|Vpp=|-|50|V,|Ip=|-|0|.|6|A,|
|charge|total|Cae|1.8|2.2||nc|Vas=0|to|-4.5|V|
|Vop=|-|50|V,|lp=|-|0.6 A,|
|Gate|charge|total|la|en|Vop=-50|V,|Ip=-0.6|A,|Ves=0|to|-10|V|
|Table|7|Reverse|diode|
|m|aramet|er|Symbol,ymbo|Min.ae|unit|Noote /I|TeTe t|s|t|ConditionCondit|
|Typ.|[Max.|
|Diode|continuous|forward|current|a|ee|eee|Tc=25|°C|
|Diode|pulse|current|couse|>4A||To|25|°C|
|Diode|forward|voltage|Veo|ides|[2|[Vv|Ves=0|V,|Ir=-0.6|A,|T=25|°C|
|Reverse|recovery|time”!|it|s|-——s|«f|22.49.|[44.98|Va=|-|50|V,|Ir=|-|0|.|6|A,|dicidt|=-|100 A/ys|
|Reverse|recovery|charge”|la;||-———«|26.53.|[53.06|Va=-50|V,|Ir=-0.6|A,|disldt=-100|Aus|

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## Table 7 Reverse diode 

') See “Gate charge waveforms’ for parameter definition ?) Defined by design. Not subject to production test. Final Data Sheet 

5 

Rev ~~.~~ 2 ~~.~~ 0, 2021 ~~-0~~ 5 ~~-~~ 10 

OptiMOS™ Power- ~~T~~ ransistor, ~~-~~ 100 V 

ISP20EP10LM 

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## 4 Electrical characteristics diagrams 

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Diagram 1: Power dissipation Diagram 2: Drain current<br>5 TLLLILLTFLLOLLLOLLL 1.2“TTTTITIFITITtfTtftftftfttty<br>rT PPTL LTT LLeL ey 4 | | [| [| | [| | [| [| | TT [ [| [TT [ JT |<br>eee OO<br>Po tt a<br>“CrT ER P |IPNOPEREEEE\ | |}?LEE LEEEE| | E ttLLELLeeyEEEtt tt 4 | ERRRGEEEEEEEEEEEsoLt | | IN| | tT tT ft | ft tT fT fT<br>TEINptPTrere T TPPINErereiInREE PttereEA] eee ei |.= °8T Ee)AaTTT| | |  TP|OO| ftREEL| | Woe ft Pt yy<br>= N < aAK<br>~3 Lt tT tT tt tT APEJ EET TT TT 2 0.6 a OO\<br>a —t ttt te tp KP | A<br>TOT NTE PeEN<br>es } | | | | ft f ft ft fy fp PN Pt<br>Ne 04777777 Trrrryre ntl<br>fot ft | tT te tt A tT aOO<br>N<br>ETEee ee ANTE J o0 a pe2aA<br>eee OO<br>| [| | tT Pe TT |<br>Pe aOO Pe a<br>0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160<br>Tc [°C] Tc [°C]<br>Prot=f(Tc) Ib=f(Tc); |Ves|210 V<br>Diagram 3: Safe operating area Diagram 4: Max . transient thermal impedance<br>10)  SS 10°  Sere<br>eeaEEa eeoe oeusTTCon AI[}——‘|---  —  0single0 .. 0102 pulse TTaConRSHTTTt)CCHea |<br>— HHO EB allill [| eves 0.05 a a<br>roe LIMESS LE INNUNSUIE LIM | oe = 22 LLIN TILE ET<br>[|IZy TTT A TTTaHINeeNUNNNoes}ee TTT4h TT LCSa a Tr i ii aTTnT TE TL<br>a HHI NC - (ea tal _ HHH eT Tl<br>Z o antl a<br>2, E47LL FEEI SomeAEE NH LIMEEF} |S jos LeeCOTEti teeseasett ttt tte|||Ft<br>a a a ee De PE ETH oe get HT<br>7S cA N Lee tr TTT TT)<br>LAt tt OY ee an a QT<br>HCHO Se“Lo a<br>vo r EtLUNE LEI LEN LEI | sge eAUTIETM LTT i<br>Lt [ET] TTT aSe aeae aeee eee ee ent<br>| ee<br>a|ll CTEETITTT TIE TTT<br>yo o {ELLUMEET EAI ETI] g g EERIE ETN TTI TTI TT<br>10 " 10° 10' 10? 10° 10 ° 10 + 10 ° 10 7 10 7 10° 10'<br>-Vos [V] t [s]<br>lp=f(Vos); Tc=25 °C; D=0; parameter: tp Zinsc=f(tp); parameter: D=tp/T<br>**----- End of picture text -----**<br>


Final Data Sheet 

6 

Rev ~~.~~ 2 ~~.~~ 0, 2021 ~~-0~~ 5 ~~-~~ 10 

ISP20EP10LM 

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OptiMOS™ Power- T ransistor, - 100 V Cii n filneon<br>**----- End of picture text -----**<br>


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Diagram 5: Typ. output characteristics Diagram 6: Typ . drai n- source on resistance<br>2.00 5 6000 Fr<br>- 10V a ee ee ee<br>1.75 a ee 0 ee ee<br>yy v a o 4 a 0 ee ee ee ee<br>A , 5000 -—_—_|_} |_}/ | ~~ | ~~ | ft |<br>1.50 4 d a eese eeee eeee ee<br>Sf I a ee 0 ee ee ee<br>WA a ee ee ee<br>AiJ 4000 -—__._} | _-_ }/ | |<br>1.25 Wa a ee<br>YY > a ee ee eeee ee<br>= YjY)a E a ee 0 ee ee ee<br>x, 00 Up / = 3099 p+} +H} +} ,  5y-|<br>20 Wi ~ a ee ee ee ee ye |<br>' VY & a e s e s eea ex ,<br>Wi 2 a v g y et<br>0.75 Ye & _ , L e rT<br>Vyyy,YsWy 3V 0000 —aeo= E |___Ba D] |<br>VY S 10  V1<br>0.50 W/o tt 4 a ss<br>Y 4000 -~——____ |_| ~~ | ~~ | | | |<br>0.25 y a ss<br>a<br>4 a<br>0 . 00 A 9+ | [| [fT a<br>0 1 2 3 4 5 0 . 00 0 . 25 0 5 0 0 7 5 1 . 00 1 . 25 1 . 50 1 . 75 2 . 00<br>-Vos [V] -lp [A]<br>Ip=f(Vos), T7=25 °C; parameter: Ves Rosvon)=f(/p), T=25 °C; parameter: Ves<br>Diagram 7: Typ. transfer characteristics Diagram 8: Typ . drai n- source on resistance<br>2.00 To 6000 TTP<br>1 . 75 aq rT LTTrTLTT TTT ttette ee teetee et eeeete eee eeeeee ee ttee tt ee toto<br>sootttt ttt tt tr ey ee eee<br>Lt ett ete et te et et ET<br>1 . 50 LTT tte tee ee eee ee tt ee to<br>rT TTT ee et te eee<br>LTT tte tee ee eee ee tt ee to<br>aoot+tt tt tt eT tT Tt tt ET TT Tt<br>1.25 LT Tt ttt tt |) eeeeee<br>= | pa ° nu > SSLi ttt ttt ttSatee tt tt Yt aeLT TT<br>x 1.00 ‘aery ys 7 | eeEe Lta aett et et te et<br>20 ~ LT TTT eee te te eeeeT<br>' & rT Tee ee eee ee ee ee ee ee ee yo<br>0.75 / é LTTLt etttty eeeet ette tete eeeet<br>soot ttt ttt ttt tt tt tt tt et tt tt<br>seePty yyy ye [et] 25 °C +H<br>0.50 LT TTT ee ete te eee<br>) LTT tte tee ee eee ee tt ee to<br>/ soot tttt<br>0.25 TT TTT eee ee ee et ee ee<br>/} LTT tte tee ee eee ee tt ee to<br>y LTT tte tee ee eee ee tt ee to<br>y, rT TTT ee et te eee<br>0.00 PAA gogftlLIT tt i titt itt tt trite tt tt |<br>0 1 2 3 4 5 0 2 4 6 8 10<br>-Ves [V] -Ves [V]<br>Ib=f(Ves), |Vos|>2|/o|Ros(onymax; parameter: T; Rosion)=f(Ves), /o= - 0 . 6 A; parameter: Tj<br>**----- End of picture text -----**<br>


Final Data Sheet 

7 

Rev ~~.~~ 2 ~~.~~ 0, 2021 ~~-0~~ 5 ~~-~~ 10 

## OptiMOS™ Power- ~~T~~ ransistor, ~~-~~ 100 V V 

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OptiMOS™ Power- T ransistor, - 100 V V C IT n fitneon ;<br>ISP20EP10LM<br>Diagram 9: Normalized drai n- source on resistance Diagram 10: Typ . gate threshold voltage<br>TOE) TTT<br>LT TTT tT tte ttt tT TT TT ET TE TT RK<br>sot tt ttt ttt tT TT tT tT tt TT meee ~<br>tTPEtT tT TT E TEPEET EE EE EE TE YT ThPNinPe<br>ra)ae [ee] PTT T TTT ttt TTT TTT TET YT TT 1.50 NYSee —“ |<br>Hed eee Tr ; 7 35 uA<br>ie Hace<br>ses [eeeceeeweee?7aceseeem]<br>E = N 12 TTT TTT TTT tT TTAR/ TT| TT TT TTT | so]aT—=2 1.00 EEE<br>= LTT TTT tt tt yer TT Te TT TT fs<br>& COA | oe<br>a A<br>BO EERERECEEECE<br>0.4 TTT TTT ett TT TT TTT ETTEHTT TT<br>“LE TT TT EEE E TE ttt ttt ty ye 2<br>TET TTT ttt tT TE TEE TT 0.20<br>PT tT tT TT TEE EE ET TE EE EE ET ET TT<br>oo  LEE 0 . 00<br>- 80 - 40 0 40 80 120 160 - 80 - 40 0 40 80 120 160<br>TEC] HEC)<br>Ros(on)=f( Tj), Tj), Ip= - 0 . 6 A, Ves= - 10 V V Vesith=f(7}), Voes= Vos; parameter: Ip<br>Diagram 11: Typ. capacitances Diagram 12: Forward characteristics of reverse diode<br>10° SS A A 10! L ILITIIITITIITI;); );1);));;17;71);7)1171I);.7 77774<br>a HY—— 95° os<br>A A eee (| 25°C VT tT TTT tT tT ee tt tt tt tT<br>Prrrrrerryr yy rr eee [}—— 25°C,max FDP<br>sss<br>SEEEEEEESSSEEEEEEEEET] | fs 8-8 e f [CECE]<br>ALLTELPett EEE EEE TI150 °C, max T TLEee )<br>a | ><br>AWeer rereA AreA A eeSReee eee2<br>Ti WAT TT Te te ee tT TE TTP TE ET TT TT o LTT TT TTT ett te tat Tyeiyep ee<br>2 ANT TTT TTT TT TTT TTT TTT) js PET ET TTT TE TTT TT TTT TE [eee]<br>© SST a ST<br>ow AEE) . ELEEET<br>ee ee<br>A A | pT Tp te pe ee era ea a ae<br>A NB ee (TTT tT Tt tT tT tet tt tr tt ts ta<br>CPV rrr COPEeee<br>LT TING | ttt te ttt te TT LEE EEE Ett te tt tt eT eT ET TT TT<br>PEPESceeE SUA EEGSEEE E EEERGBERnnaEE PULTELETT TT TTT TTT TT TeEEETT<br>w LETTE) , LTEE<br>0 20 40 60 80 100 0.00 0.25 0.50 0.75 1.00 1 . 25 1 . 50<br>-Vos [V] -Vsp [V]<br>C=f(Vps); Ves=0 V; 1 MHz IF=f(Vsp); parameter: T;<br>**----- End of picture text -----**<br>


## ISP20EP10LM 

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Ros(on)=f( Tj), Tj), Ip= - 0 . 6 A, Ves= - 10 V V<br>**----- End of picture text -----**<br>


Final Data Sheet 

8 

Rev ~~.~~ 2 ~~.~~ 0, 2021 ~~-0~~ 5 ~~-~~ 10 

OptiMOS™ Power- ~~T~~ ransistor, ~~-~~ 100 V 

ISP20EP10LM 

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Diagram 13: Avalanche characteristics Diagram 14: Typ . gate charge<br>10° a SSS SS eee |  ESS 10 Freee ml A nn Ds ns 2/4 2<br>THIETPTCTTTTT SENCTANTI\ Xi SSTNX ELLEN Poe o 2 eeeOG o [B] 5 [OVE] tr<br>COT<br>CI\ ASTM | GEEEEEEERBRESEE<br>\ q ee ee ee) 7<br>\ Pg 7<br>> 5 LY.|<br>= Me °EEREERR GREER EEE<br>zee 107 -—2— — cin |oO8 nnee 7eee eee<br>\ 774<br>a a Ae<br>ell FS AFoo<br>ee ell 2<br>LEE EE | 2 o o<br>[ALT | dT hE hd T cd Td Thc ThE hd Th Th TT<br>7 ee ee<br>yt tT | tt te<br>10 2 oft tT TT itTitT it tT tt tt tt<br>10° 10! 10? 10° 0 . 0 0 . 5 1 . 0 1 . 5 2 . 0 2 . 5 3 . 0 3 . 5 4 . 0<br>tav [US] -Qgate [NC]<br>Ing=f(tav); Res=25 Q; parameter: Tj start Voes=f(Qgate), Ip> =- 0 . 6 A pulsed, 7=25 °C; parameter: Vop<br>Diagram 15: Drain - source breakdown voltage Diagram Gate charge waveforms<br>116 TTT TTT TTI TTT TTT Tey yy TT<br>LT eee EEE EEE EEE TE ET TT<br>112 FEE EERE EE EEE EEE Vos<br>PTT TT TTT TTT TTT eT eT et tT, Q,<br>PL TT TTT ETT TET ett ett et Are/ tl<br>PLT TTT TTT TTT Tete TT et et Tt<br>split tit ttt tt ty tet Ad TT<br>LT TTT TTT TT ET ET AT<br>S P ITTITT T TT TTTT TTTTTT TTT Tt TTAreeArr eeTTTT<br>e watt tT itt ti ttt TA tT TT<br>@ TTT TTT TTT TTT Trae TT TT<br>& PILTT TTT TTT TT TA eT TT TT<br>; PITTI TTT TTT TTA TT TT<br>7)<br>ee EEE AEEEEE<br>LTT TT TTT TA TTT TT EET TT TT<br>PITTI TTT PAT TTT Te eT ee TT<br>op ttt TT TAT TTT TTT TT Tt TT<br>FEEPITTI TAITZEEETT  EEETTT TTEEETT TTEEETT TT ae7  Pe ee gate<br>PITT ATT TTT TTT TT TT ET TT TT I<br>gt LIZ TIT T itty tit t tt ty ttt | Qoa<br>- 80 - 40 0 40 80 120 160<br>Fj [°C]<br>Vervossi=f(Ti); f = mA<br>**----- End of picture text -----**<br>


Final Data Sheet 

9 

Rev ~~.~~ 2 ~~.~~ 0, 2021 ~~-0~~ 5 ~~-~~ 10 

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OptiMOS™ Power- ~~T~~ ransistor, ~~-~~ 100 V ISP20EP10LM 

CiT **n** fitneon 

## Revision History 

ISP20EP10LM 

## Revision: 2021 ~~-0~~ 5 ~~-1~~ 0, Rev ~~.~~ 2.0 

|Previous Revision|Previous Revision|Previous Revision|Previous Revision|Previous Revision|Previous Revision|Previous Revision|||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Revision|||||||Subjects|||(major changes since last revision)|||||||||
|2.0||||2021~~-~~05~~-~~10||||Release|||offinalversion|||||||||



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Published by Infineon Technologies AG 81726 Miinchen, Germany © 2020 Infineon Technologies AG All Rights Reserved ~~.~~ 

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## Warnings 

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office ~~.~~ 

The Infineon Technologies component described in this Data Sheet may be used in lif ~~e~~ -support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lif ~~e~~ -support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 

Final Data Sheet 

11 

Rev ~~.~~ 2 ~~.~~ 0, 2021 ~~-0~~ 5 ~~-~~ 10 



## Links

- [View this product on Novapart](https://novapart.co/products/ISP20EP10LMXTSA1/power-mosfet-p-channel-100-v-990-ma-17754-ohm-sot)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/isp20ep10lmxtsa1/mosfet-p-ch-100v-sot-223-4/dp/3873740)
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