# IGBT, 21 A, 1.25 V, 150 W, 420 V, TO-263 (D2PAK), 3 Pins ![Product image](https://novapart.co/image/farnell:3018900/) **URL**: https://novapart.co/products/ISL9V3040S3ST-F085C/igbt-21-a-125-v-150-w-420-to-263-d2pak-3-pins **SKU**: ISL9V3040S3ST-F085C **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || IGBTs || Single IGBTs **Price**: €0.9740 **Stock**: 1000+ **Lead Time**: 113 days (indicative) ## Description DC Collector Current:21A; Collector Emitter Saturation Voltage Vce(on):1.25V; Power Dissipation Pd:150W; Collector Emitter Voltage V(br)ceo:420V; Transistor Case Style:TO-263; No. of Pi ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | Lead (25-Jun-2025) | | No. Of Pins | 3Pins | | Product Range | EcoSPARK I | | Power Dissipation | 150W | | Transistor Mounting | Surface Mount | | Transistor Case Style | TO-263 (D2PAK) | | Operating Temperature Max | 175°C | | Continuous Collector Current | 21A | | Collector Emitter Voltage Max | 420V | | Collector Emitter Saturation Voltage | 1.25V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3018900/) ## ISL9V3040D3ST-F085C ISL9V3040S3ST-F085C EcoSPARK Ignition IGBT | ## EcoSPARK Ignition IGBT **300 mJ, 400 V, N−Channel Ignition IGBT** ## **Features** - SCIS Energy = 300 mJ at TJ = 25°C - Logic Level Gate Drive - AEC−Q101 Qualified and PPAP Capable - These Devices are Pb−Free and are RoHS Compliant ## **Applications** - Automotive Ignition Coil Driver Circuits - High Current Ignition System - Coil on Plug Application **==> picture [144 x 125] intentionally omitted <==** **----- Start of picture text -----**
www.onsemi.com
COLLECTOR
R1
st
GATE
R2
al
EMITTER
**----- End of picture text -----**
**MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) |~~ee~~|~~es~~||| |---|---|---|---| |**Symbol**
~~ee~~|**Parameter**
~~es~~|**Value**|**Unit**| |BVCER
~~ee~~
~~+}~~|Collector to Emitter Breakdown
Voltage (IC = 1 mA)
~~es~~
~~+}~~|400
~~+}~~|V
~~+}~~| |BVECS
~~ee~~
~~+}~~|Emitter to Collector Voltage − Reverse
Battery Condition (IC = 10 mA)
~~es~~
~~+}~~|24
~~+}~~|V
~~+}~~| |ESCIS25
~~+}~~
~~aTPES~~|ISCIS = 14.2 A, L = 3.0 mHy,
RGE = 1 K
TC= 25°C (Note 1)
~~+}~~
~~TPESSSIS~~|300
~~+}~~
~~SSIS~~|mJ
~~+}~~
~~SSIS~~| |ESCIS150
~~TPES~~|ISCIS = 10.6 A, L = 3.0 mHy,
RGE = 1 K
TC= 150°C (Note 2)
~~TPESSSIS~~|170
~~SSIS~~|mJ
~~SSIS~~| |IC25
~~TPES~~
~~TpSSSIRIS~~
~~a~~|Collector Current Continuous
at VGE = 4.0 V, TC= 25°C
~~TPES SSIS~~
~~TpSSSIRIS~~
~~==ESTE~~|21
~~SSIS~~
~~TpSSSIRIS~~
~~ESTE~~|A
~~SSIS~~
~~TpSSSIRIS~~
~~ESTE~~| |IC110
~~TE~~
~~a~~|Collector Current Continuous
at VGE = 4.0 V, TC= 110°C
~~TE~~
~~==ESTE~~
~~ee~~|17
~~TE~~
~~ESTE~~
~~ee~~|A
~~TE~~
~~ESTE~~| |VGEM
~~TE~~
~~a~~
~~_———E~~|Gate to Emitter Voltage Continuous
~~TE~~
~~== ESTE~~
~~ee~~
~~_———E~~|±10
~~TE~~
~~ESTE~~
~~ee~~
~~_———E~~|V
~~TE~~
~~ESTE~~
~~_———E~~| |PD
~~_———E~~|Power Dissipation Total, TC= 25°C
~~ee~~
~~_———E~~|150
~~ee~~
~~_———E~~|W
~~_———E~~| ||Power Dissipation Derating, TC> 25°C
~~ee ~~
~~_———E~~|1
~~ee~~
~~_———E~~|W/°C
~~_———E~~| |TJ, TSTG
~~_———E~~
~~ee~~
~~SE~~|Operating Junction and Storage
Temperature
~~_———E~~
~~ee~~
~~SEET~~|−55 to +175
~~_———E~~
~~ee~~
~~ET~~|°C
~~_———E~~
~~ee~~
~~ET~~| |TL
~~SE~~|Lead Temperature for Soldering
Purposes (1/8” from case for 10 s)
~~SEET~~|300
~~ET~~|°C
~~ET~~| |TPKG
~~SE~~
~~ee~~|Reflow Soldering according to
JESD020C
~~SE ET~~
~~ee~~|260
~~ET~~
~~ee~~|°C
~~ET~~
~~ee~~| |ESD
~~ae~~|HBM−Electrostatic Discharge Voltage
at 100 pF, 1500
~~ae~~|4
~~ae~~|kV
~~ae~~| ||CDM−Electrostatic Discharge Voltage
at 1
~~ae~~
~~ee~~|2
~~ae~~
~~ee~~|kV
~~ae~~
~~ee~~| **==> picture [151 x 18] intentionally omitted <==** **----- Start of picture text -----**
DPAK3 D [2] PAK−3
CASE 369AS CASE 418AJ
**----- End of picture text -----**
**==> picture [90 x 8] intentionally omitted <==** **----- Start of picture text -----**
MARKING DIAGRAM
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**==> picture [116 x 109] intentionally omitted <==** **----- Start of picture text -----**
AYWW
XXX
XXXXXG
4
A = Assembly Location
Y = Year
WW = Work Week
XXXX = Device Code
G = Pb−Free Package
**----- End of picture text -----**
## **ORDERING INFORMATION** See detailed ordering and shipping information on page 2 of this data sheet. 1. Self clamped inductive Switching Energy (ESCIS25) of 300 mJ is based on the test conditions that is starting TJ = 25 ° C, L = 3 mHy, ISCIS = 14.2 A, VCC = 100 V during inductor charging and VCC = 0 V during time in clamp. 2. Self Clamped inductive Switching Energy (ESCIS150) of 170 mJ is based on the test conditions that is starting TJ = 150 ° C, L = 3mHy, ISCIS = 10.6 A, VCC = 100 V during inductor charging and VCC = 0 V during time in clamp. Publication Order Number: **ISL9V3040−F085C//D** **1** © Semiconductor Components Industries, LLC, 2016 **January, 2019 − Rev. 0** **ISL9V3040D3ST−F085C** ## **THERMAL RESISTANCE RATINGS** |**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|||||||| |---|---|---|---|---|---|---|---|---|---|---| |**Characteristic**|||||**Symbol**||**Max**|||**Units**| |Junction−to−Case – Steady State (Drain)|||||R�JC|||1||°C/W| |**ELECTRICAL CHARACTERISTICS**(TJ= 25°C unless otherwise specified)||||||||||| |**Symbol**|**Parameter**|**Test Conditions**|||**Min**|**Typ.**||**Max.**||**Units**| |**OFF CHARACTERISTICS**||||||||||| |BVCER|Collector to Emitter Breakdown
Voltage|ICE= 2 mA, VGE = 0 V,
RGE= 1 k�,
TJ= −40 to 150°C|||370|400||430||V| |BVCES|Collector to Emitter Breakdown
Voltage|ICE= 10 mA, VGE = 0 V,
RGE= 0,
TJ= −40 to 150°C|||390|420||450||V| |BVECS|Emitter to Collector Breakdown
Voltage|ICE= −75 mA, VGE = 0 V,
TJ= 25°C|||30|−||−||V| |BVGES|Gate to Emitter Breakdown Voltage|IGES=±2 mA|||±12|±14||−||V| |ICER|Collector to Emitter Leakage Current|VCE= 175 V
RGE= 1 k�|TJ= 25°C||−|−||25||�A| ||||TJ= 150°C||−|−||1||mA| |IECS|Emitter to Collector Leakage Current|VEC= 24 V|TJ= 25°C||−|−||1||mA| ||||TJ= 150°C||−|−||40||| |R1|Series Gate Resistance||||−|70||−||�| |R2|Gate to Emitter Resistance||||10K|−||26K||�| |**ON CHARACTERISTICS**||||||||||| |VCE(SAT)|Collector to Emitter Saturation
Voltage|ICE= 6 A, VGE = 4 V, TJ= 25°C|||−|1.25||1.65||V| |VCE(SAT)|Collector to Emitter Saturation
Voltage|ICE= 10 A, VGE =|4.5 V, TJ= 150°C||−|1.58||1.80||V| |VCE(SAT)|Collector to Emitter Saturation
Voltage|ICE= 15 A, VGE =|4.5 V, TJ= 150°C||−|1.90||2.20||V| |**DYNAMIC CHARACTERISTICS**||||||||||| |QG(ON)|Gate Charge|ICE= 10 A, VCE =|12 V, VGE= 5 V||−|17||−||nC| |VGE(TH)|Gate to Emitter Threshold Voltage|ICE= 1 mA
VCE= VGE|TJ= 25°C||1.3|−||2.2||V| ||||TJ= 150°C||0.75|−||1.8||| |VGEP|Gate to Emitter Plateau Voltage|VCE= 12 V, ICE =|10 A||−|3.0||−||V| |**SWITCHING CHARACTERISTICS**||||||||||| |td(ON)R|Current Turn−On Delay
Time−Resistive|VCE= 14 V, RL = 1�,
VGE= 5 V, RG= 470�,
TJ= 25°C|||−|0.7||4||�s| |trR|Current Rise Time−Resistive||||−|2.1||7||| |td(OFF)L|Current Turn−Off Delay
Time−Inductive|VCE= 300 V, L = 1 mH,
VGE= 5 V, RG= 470�,
ICE= 6.5 A, TJ= 25°C|||−|4.8||15||| |tfL|Current Fall Time−Inductive||||−|2.8||15||| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ## **PACKAGE MARKING AND ORDERING INFORMATION** |**Device**|**Package**|**Shipping**†| |---|---|---| |ISL9V3040D3ST−F085C|DPAK
(Pb−Free)|2500 Units/Tape & Reel| |SL9V3040S3ST−F085C|DPAK
(Pb−Free)|2500 Units/Tape & Reel| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. **www.onsemi.com** **2** **ISL9V3040D3ST−F085C** ## **TYPICAL CHARACTERISTICS** **Figure 1. Self Clamped Inductive Switching Current vs. Time in Clamp** **Figure 2. Self Clamped Inductive Switching Current vs. Inductance** **Figure 3. Collector to Emitter On−State Voltage vs. Junction Temperature** **Figure 4. Collector to Emitter On−State Voltage vs. Junction Temperature** **Figure 5. Collector to Emitter On−State Voltage vs. Collector Current** **Figure 6. Collector to Emitter On−State Voltage vs. Collector Current** **www.onsemi.com** **3** **ISL9V3040D3ST−F085C** ## **TYPICAL CHARACTERISTICS** (continued) **Figure 7. Collector to Emitter On−State Voltage vs. Collector Current** **Figure 8. Transfer Characteristics** **Figure 9. DC Collector Current vs. Case Temperature** **Figure 10. Gate Charge** **Figure 11. Threshold Voltage vs. Junction Temperature** **Figure 12. Leakage Current vs. Junction Temperature** **www.onsemi.com** **4** **ISL9V3040D3ST−F085C** ## **TYPICAL CHARACTERISTICS** (continued) **Figure 13. Switching Time vs. Junction Temperature** **Figure 14. Capacitance vs. Collector to Emitter** **Figure 15. Break Down Voltage vs. Series Resistance** **Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case** **www.onsemi.com** **5** **ISL9V3040D3ST−F085C** ## **TEST CIRCUIT AND WAVEFORMS** **Figure 17. Inductive Switching Test Circuit** **Figure 18. tON and tOFF Switching Test Circuit** **Figure 19. Energy Test Circuit** **Figure 20. Energy Waveforms** **www.onsemi.com** **6** **ISL9V3040D3ST−F085C** ## **PACKAGE DIMENSIONS** **DPAK3 (TO−252 3 LD)** CASE 369AS ISSUE O **==> picture [148 x 31] intentionally omitted <==** **www.onsemi.com** **7** **ISL9V3040D3ST−F085C** ## **PACKAGE DIMENSIONS** **D[2] PAK−3 (TO−263, 3−LEAD)** CASE 418AJ ISSUE C **==> picture [480 x 485] intentionally omitted <==** **----- Start of picture text -----**
B SEATINGPLANE NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
E A A Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
E2 c2 L1 3. CHAMFER OPTIONAL
NOTE 3 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
A FLASH. MOLD FLASH SHALL NOT EXCEED 0.005
PER SIDE. THESE DIMENSIONS ARE MEASURED
L1 D1 AT THE OUTERMOST EXTREMES OF THE PLAS-TIC BODY AT DATUM H.TIC BODY AT DATUM H.
D 5. THERMAL PAD CONTOUR IS OPTIONAL WITHIN
H DIMENSIONS E, L1, D1 AND E1.
DETAIL C E1
INCHES MILLIMETERS
0.10 M B A M DIM MIN MAX MIN MAX
A 0.160 0.190 4.06 4.83
L2 A1 0.000 0.010 0.00 0.25
A b 0.020 0.039 0.51 0.99
e c VIEW A−A c 0.012 0.029 0.30 0.74
c2 0.045 0.065 1.14 1.65
2X b SIDE VIEW D 0.330 0.380 8.38 9.65
TOP VIEW 0.10 M B A M GAUGE H D1E 0.2600.380 0.420−−−− 9.656.60 10.67−−−−
PLANE E1 0.245 −−−− 6.22 −−−−
L3 e 0.100 BSC 2.54 BSC
H 0.575 0.625 14.60 15.88
L 0.070 0.110 1.78 2.79
L1 −−−− 0.066 −−−− 1.68
L2 −−−− 0.070 −−−− 1.78
L A1 B SEATINGPLANE L3M −80.010 BSC ° 8 ° −80.25 BSC ° 8 °
M DETAIL C
VIEW A−A
OPTIONAL CONSTRUCTIONS
RECOMMENDED
SOLDERING FOOTPRINT*
0.436
0.366
0.653
2X
0.169
2X
0.063
0.100
PITCH
DIMENSIONS: INCHES
**----- End of picture text -----**
- NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.005 PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREMES OF THE PLAS-TIC BODY AT DATUM H.TIC BODY AT DATUM H. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **www.onsemi.com** **8** **ISL9V3040D3ST−F085C** ECOSPARK is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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