# IGBT, 21 A, 1.6 V, 150 W, 400 V, TO-252 (DPAK), 3 Pins

![Product image](https://novapart.co/image/farnell:3615808/)

**URL**: https://novapart.co/products/ISL9V3040D3ST-F085C/igbt-21-a-16-v-150-w-400-to-252-dpak-3-pins
**SKU**: ISL9V3040D3ST-F085C
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €0.6020
**Stock**: 10+
**Lead Time**: 127 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Power Dissipation | 150W |
| Transistor Mounting | Surface Mount |
| Transistor Case Style | TO-252 (DPAK) |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 21A |
| Collector Emitter Voltage Max | 400V |
| Collector Emitter Saturation Voltage | 1.6V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3615808/)

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## ECOSPARK Ignition IGBT 

## **300 mJ, 400 V, N-Channel Ignition IGBT -** ISL9V3040x3ST F085C 

## **Features** 

- SCIS Energy = 300 mJ at TJ = 25 °C 

- Logic Level Gate Drive 

- AEC-Q101 Qualified and PPAP Capable 

- These Devices are Pb-Free and are RoHS Compliant 

## **Applications** 

- Automotive Ignition Coil Driver Circuits 

- High Current Ignition System 

- Coil on Plug Application 

**==> picture [178 x 202] intentionally omitted <==**

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COLLECTOR<br>R1<br>GATE<br>< |<br>S R2 |<br>EMITTER<br>C C<br>G<br>G<br>E<br>E<br>DPAK3 D [2] PAK-3<br>CASE 369AS CASE 418AJ<br>**----- End of picture text -----**<br>


**MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) 

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|||||||||||
|---|---|---|---|---|---|---|---|---|---|
|a|Symbol|es|Parameter|ee|Value|Unit|C|
|BVCER|Collector to Emitter Breakdown|400|V|
|Voltage (IC = 1 mA)|
|G = Gate|
|Peee|BVECS|Emitter to Collector Voltage − ReverseBattery Condition (IC = 10 mA)|24|V|G|C|E|||E = EmitterC = Collector|
|ESCIS25|ISCIS =  14.2 A, L = 3.0 mHy,|300|mJ|TO-220-3LD|
|Pe|RGE = 1 K|TC = 25|°|C (Note 1)|CASE 340AT|
|ESCIS150|ISCIS =  10.6 A, L = 3.0 mHy,|170|mJ|
|a|RGE = 1 K|TC = 150|°|C (Note 2)|MARKING DIAGRAMS|
|IC25|Collector Current Continuous|21|A|
|Pe|at VGE = 4.0 V, TC = 25|°|C|ee|ee|
|IC110|Collector Current Continuous|17|A|AYWW|
|ee|at VGE = 4.0 V, TC = 110|°|C|XXXXXXXXG|con|AYWWZZ|
|VGEM|Gate to Emitter Voltage Continuous|±|10|V|V3040PC|
|PD|Power Dissipation Total, TC = 25|°|C|150|W|
|pf|——|
|Power Dissipation Derating, TC > 25|°|C|1|W/|°|C|
|__|TJ, TSTG|Operating Junction and Storage|−55 to +175|°|C|po|
|Pe|Temperature|A|= Assembly Location|IU|
|TL|Lead Temperature for Soldering|300|°|C|Y|= Year|
|Pe|Purposes (1/8” from case for 10 s)|WW|= Work Week|
|TPKG|Reflow Soldering according to|260|°|C|XXXXG|= Device Code= Pb-Free Package|
|JESD020C|
|Pe|ZZ|= Assembly Lot Number|
|ESD|HBM−Electrostatic Discharge Voltage|4|kV|V3040PC|= Device Code|
|at 100 pF, 1500|
|CDM−Electrostatic Discharge Voltage|2|kV|
|at 1|ORDERING INFORMATION|
|Pe||
|Po|TE|

**----- End of picture text -----**<br>


See detailed ordering and shipping information on page 7 of this data sheet. 

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. Self clamped inductive Switching Energy (ESCIS25) of 300 mJ is based on the test conditions that is starting TJ = 25 ° C, L = 3 mHy, ISCIS = 14.2 A, VCC = 100 V during inductor charging and VCC = 0 V during time in clamp. 

2. Self Clamped inductive Switching Energy (ESCIS150) of 170 mJ is based on the test conditions that is starting TJ = 150 ° C, L = 3 mHy, ISCIS =  10.6 A, VCC = 100 V during inductor charging and VCC = 0 V during time in clamp. 

Publication Order Number: **ISL9V3040-F085C/D** 

**1** 

© Semiconductor Components Industries, LLC, 2016 **January, 2026 − Rev. 3** 

**ISL9V3040x3ST-F085C** 

## **THERMAL RESISTANCE RATINGS** 

|**Characteristic**<br>**Symbol**<br>**Max**<br>**Units**|
|---|
|Junction-to-Case – Steady State (Drain)<br>R JC<br>1<br>°C/W<br>~~pf~~|
|**ELECTRICAL CHARACTERISTICS**(TJ= 25°C unless otherwise specified)|
|**Symbol**<br>**Parameter**<br>**Test Conditions**<br>**Min**<br>**Typ.**<br>**Max.**<br>**Units**<br>**OFF CHARACTERISTICS**<br>~~a~~|
|BVCER<br>Collector to Emitter Breakdown<br>Voltage<br>ICE= 2 mA, VGE  = 0 V,<br>RGE= 1 k<br>TJ= −40 to 150°C<br>370<br>400<br>430<br>V<br>BVCES<br>Collector to Emitter Breakdown<br>Voltage<br>ICE= 10 mA, VGE  = 0 V,<br>RGE= 0,<br>TJ= −40 to 150°C<br>390<br>420<br>450<br>V<br>BVECS<br>Emitter to Collector Breakdown<br>Voltage<br>ICE= −75 mA, VGE  = 0 V,<br>TJ= 25°C<br>30<br>−<br>−<br>V<br>~~a~~<br>~~a~~<br>~~a~~<br>~~aee~~|
|BVGES<br>Gate to Emitter Breakdown Voltage<br>IGES=±2 mA<br>±12<br>±14<br>−<br>V|
|ICER<br>Collector to Emitter Leakage Current<br>VCE= 175 V<br>RGE= 1 k<br>TJ= 25°C<br>−<br>−<br>25<br>A<br>TJ= 150°C<br>−<br>−<br>1<br>mA<br>IECS<br>Emitter to Collector Leakage Current<br>VEC= 24 V<br>TJ= 25°C<br>−<br>−<br>1<br>mA<br>TJ= 150°C<br>−<br>−<br>40<br>~~ee~~<br>~~a~~|
|R1<br>Series Gate Resistance<br>−<br>70<br>−<br>R2<br>Gate to Emitter Resistance<br>10K<br>−<br>26K<br>**ON CHARACTERISTICS**<br>~~a~~<br>~~Gc~~<br>~~a~~<br>~~ee=~~|
|VCE(SAT)<br>Collector to Emitter Saturation<br>ICE= 6 A, VGE  = 4 V, TJ= 25°C<br>−<br>1.25<br>1.65<br>V|
|Voltage|
|VCE(SAT)<br>Collector to Emitter Saturation<br>ICE= 10 A, VGE  = 4.5 V, TJ= 150°C<br>−<br>1.58<br>1.80<br>V|
|Voltage|
|VCE(SAT)<br>Collector to Emitter Saturation<br>ICE= 15 A, VGE  = 4.5 V, TJ= 150°C<br>−<br>1.90<br>2.20<br>V|
|Voltage|
|**DYNAMIC CHARACTERISTICS**|
|QG(ON)<br>Gate Charge<br>ICE= 10 A, VCE  = 12 V, VGE= 5 V<br>−<br>17<br>−<br>nC|
|VGE(TH)<br>Gate to Emitter Threshold Voltage<br>ICE= 1 mA<br>TJ= 25°C<br>1.3<br>−<br>2.2<br>V|
|VCE= VGE<br>TJ= 150°C<br>0.75<br>−<br>1.8|
|VGEP<br>Gate to Emitter Plateau Voltage<br>VCE= 12 V, ICE  = 10 A<br>−<br>3.0<br>−<br>V|
|**SWITCHING CHARACTERISTICS**|
|td(ON)R<br>Current Turn-On Delay<br>Time-Resistive<br>VCE= 14 V, RL  = 1<br>VGE= 5 V, RG= 470<br>TJ= 25°C<br>−<br>0.7<br>4<br>s<br>trR<br>Current Rise Time-Resistive<br>−<br>2.1<br>7<br>td(OFF)L<br>Current Turn-Off Delay<br>Time-Inductive<br>VCE= 300 V, L = 1 mH,<br>VGE= 5 V, RG= 470<br>ICE= 6.5 A, TJ= 25°C<br>−<br>4.8<br>15<br>tfL<br>Current Fall Time-Inductive<br>−<br>2.8<br>15<br>Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product<br>~~pot}~~<br>~~rr~~<br>~~a a~~<br>~~rr~~<br>~~a~~<br>~~ee ee~~<br>~~a~~<br>~~ee~~<br>~~a a~~|
|performance may not be indicated by the Electrical Characteristics if operated under different conditions.|



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**ISL9V3040x3ST-F085C** 

## **TYPICAL CHARACTERISTICS** 

**Figure 1. Self Clamped Inductive Switching Current vs. Time in Clamp** 

**Figure 2. Self Clamped Inductive Switching  Current vs. Inductance** 

**Figure 3. Collector to Emitter On-State Voltage vs. Junction Temperature** 

**Figure 4. Collector to Emitter On-State Voltage vs. Junction Temperature** 

**Figure 5. Collector to Emitter On-State Voltage vs. Collector Current** 

**Figure 6. Collector to Emitter On-State Voltage vs. Collector Current** 

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**ISL9V3040x3ST-F085C** 

## **TYPICAL CHARACTERISTICS** (continued) 

**Figure 7. Collector to Emitter On-State Voltage vs. Collector Current** 

**Figure 8. Transfer Characteristics** 

**Figure 9. DC Collector Current vs. Case Temperature** 

**Figure 10. Gate Charge** 

**Figure 11. Threshold Voltage vs. Junction Temperature** 

**Figure 12. Leakage Current vs. Junction Temperature** 

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**ISL9V3040x3ST-F085C** 

## **TYPICAL CHARACTERISTICS** (continued) 

**Figure 13. Switching Time vs. Junction Temperature** 

**Figure 14. Capacitance vs. Collector to Emitter** 

**Figure 15. Break Down Voltage vs. Series Resistance** 

**Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case** 

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**ISL9V3040x3ST-F085C** 

## **TEST CIRCUIT AND WAVEFORMS** 

**Figure 17. Inductive Switching Test Circuit** 

**Figure 18. tON and tOFF Switching Test Circuit** 

**Figure 19. Energy Test Circuit** 

**Figure 20. Energy Waveforms** 

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**ISL9V3040x3ST-F085C** 

## **PACKAGE MARKING AND ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|ISL9V3040D3ST-F085C|DPAK<br>(Pb-Free)|2500 Units/Tape & Reel|
|ISL9V3040S3ST-F085C|D2PAK<br>(Pb-Free)|800 Units/Tape & Reel|
|ISL9V3040P3-F085C|TO220<br>(Pb-Free)|50 Units/Tube|



- For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, ~~|~~ BRD8011/D. 

ECOSPARK is a registered trademark of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. 

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**ISL9V3040x3ST-F085C** 

## **REVISION HISTORY** 

|**Revision**<br>**Description of Changes**<br>**Date**<br>3<br>Addition of Gate, Emitter and Collector descriptions on the front page.<br>1/22/2026<br>This document has undergone updates prior to the inclusion of this revision history table. The changes tracked here only reflect updates made<br>~~—~~|
|---|
|on the noted approval dates.|



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MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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## **TO−220−3LD** CASE 340AT ISSUE B 

DATE 08 AUG 2022 

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## **GENERIC** 

## **MARKING DIAGRAM*** 

XXXXX XXXXX AYWWZZ 

XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code 

*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ � ”, may or may not be present. Some products may not follow the Generic Marking. 

**DOCUMENT NUMBER: 98AON13818G DESCRIPTION: TO−220−3LD** 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

**PAGE 1 OF 1** 

**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

 Semiconductor Components Industries, LLC, 2019 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

## **DPAK3 6.10x6.54x2.29, 4.57P** CASE 369AS ISSUE B 

## DATE 20 DEC 2023 

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GENERIC<br>{\ aL| I \! PLEASOLSREDEFEREN ERI D O NGWNC LA E O NDADMAMOUNNUTHEALT, IO N SOLDGS EM TER E ICRM CONH N/ I D.DQ U CE TORS MARKING DIAGRAM*<br>vA<br>XXXXXX<br>[S o .1 0 ]B} XXXXXX<br>AYWWZZ<br>XXXX = Specific Device Code<br>*This information is generic. Please refer to<br>device data sheet for actual part marking. A = Assembly Location<br>Pb−Free indicator, “G” or microdot “ = ”, may Y = Year<br>or may not be present. Some products may WW = Work Week<br>not follow the Generic Marking. ZZ = Assembly Lot Code<br>Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98AON13810G Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: DPAK3 6.10x6.54x2.29, 4.57P PAGE 1 OF 1<br>**----- End of picture text -----**<br>


**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba onsemi **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2016 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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D [2] PAK−3 (TO−263, 3−LEAD)<br>CASE 418AJ<br>ISSUE F<br>**----- End of picture text -----**<br>


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SCALE 1:1<br>**----- End of picture text -----**<br>


DATE 11 MAR 2021 

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XXXXXX = Specific Device Code<br>A = Assembly Location<br>GENERIC MARKING DIAGRAMS* WL = Wafer Lot<br>Y = Year<br>WW = Work Week<br>XX AYWW W = Week Code (SSG)<br>XXXXXXXXX XXXXXXXXG XXXXXXXXG XXXXXX M = Month Code (SSG)<br>AWLYWWG AYWW  AKA XXYMW G = Pb−Free Package<br>AKA = Polarity Indicator<br>*This information is generic. Please refer to<br>device data sheet for actual part marking.<br>Pb−Free indicator, “G” or microdot “  � ”,<br>may or may not be present. Some products<br>IC Standard Rectifier SSG may not follow the Generic Marking.<br>Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98AON56370E Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: D [2] PAK−3 (TO−263, 3−LEAD) PAGE 1 OF 1<br>**----- End of picture text -----**<br>


**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2011 

**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **ADDITIONAL INFORMATION** 

**TECHNICAL PUBLICATIONS** : **ONLINE SUPPORT** : www.onsemi.com/support **Technical Library:** www.onsemi.com/design/resources/technical−documentation **For additional information, please contact your local Sales Representative at onsemi Website:** www.onsemi.com www.onsemi.com/support/sales 

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---

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