# IGBT, 15.5 A, 1.8 V, 166.7 W, 400 V, TO-263AB (D2PAK), 3 Pins ![Product image](https://novapart.co/image/farnell:3615804/) **URL**: https://novapart.co/products/ISL9V2540S3ST/igbt-155-a-18-v-1667-w-400-to-263ab-d2pak-3-pins **SKU**: ISL9V2540S3ST **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || IGBTs || Single IGBTs **Price**: €1.2700 **Stock**: 10+ ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (15-Jan-2018) | | No. Of Pins | 3Pins | | Product Range | - | | Power Dissipation | 166.7W | | Transistor Mounting | Surface Mount | | Transistor Case Style | TO-263AB (D2PAK) | | Operating Temperature Max | 175°C | | Continuous Collector Current | 15.5A | | Collector Emitter Voltage Max | 400V | | Collector Emitter Saturation Voltage | 1.8V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3615804/) ## **Is Now Part of** ## **To learn more about ON Semiconductor, please visit our website at www.onsemi.com** Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. **==> picture [75 x 9] intentionally omitted <==** **----- Start of picture text -----**
November 2009
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## **ISL9V2540S3ST EcoSPARK® N-Channel Ignition IGBT** ## **250mJ** _**,**_ **400V** ## **Features** - ! SCIS Energy = 250mJ at TJ = 25[o] C - ! Logic Level Gate Drive - ! Qualified to AEC Q101 - ! RoHS Compliant ## **Applications** - ! Automotive Ignition Coil Driver Circuits ## **General Description** The ISL9V2540S3ST is a next generation ignition IGBT that offers outstanding SCIS capability in the industry standard D²-Pak (TO-263) plastic package. This device is intended for use in automotive ignition circuits, specifically as a coil driver. Internal diodes provide voltage clamping without the need for external components. **EcoSPARK®** devices can be custom made to specific clamp voltages. Contact your nearest Fairchild sales office for more information. - ! Coil - On Plug Applications **==> picture [440 x 118] intentionally omitted <==** **----- Start of picture text -----**
Package Symbol
COLLECTOR
eo
I
I I
GATE I R1 K o
GATE I
EMITTER I I
COLLECTOR I R2
(FLANGE) I I
JEDEC TO-263AB
EMITTER
D [2] -Pak
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## **Package** ©2009 Fairchild Semiconductor Corporation ISL9V2540S3ST Rev. A1 www.fairchildsemi.com |**Device Maximum Ratings **TA= 25°C unless otherwise noted|**Device Maximum Ratings **TA= 25°C unless otherwise noted|**Device Maximum Ratings **TA= 25°C unless otherwise noted|**Device Maximum Ratings **TA= 25°C unless otherwise noted| |---|---|---|---| |**Symbol**|**Parameter**|**Ratings**|**Units**| |BV~~CER~~|Collector to Emitter Breakdown Voltage (I~~C~~=1 mA)|430|V| |BV~~ECS~~|
Emitter to Collector Voltage-Reverse Battery Condition (I~~C~~=10 mA)|24|V| |E~~SCIS25~~|
At Starting T~~J~~ =25°C, I~~SCIS~~ =12.9A, L=3.0mHy|250|mJ| |E~~SCIS150~~|
At Starting T~~J~~ =150°C, I~~SCIS~~ =10A, L=3.0mHy|150|mJ| |I~~C25~~|
Collector Current Continuous, At T~~C~~ =25°C, See Fig 9|15.5|A| |I~~C110~~|
Collector Current Continuous, At T~~C~~ =110°C, See Fig 9|15.3|A| |V~~GEM~~|
Gate to Emitter Voltage Continuous|±10|V| |P~~D~~|
Power Dissipation Total T~~C~~ =25°C|166.7|W| ||
Power Dissipation Derating T~~C~~> 25°C|1.11|W/°C| |T~~J~~|
Operating Junction Temperature Range|-40 to 175|°C| |T~~STG~~|
Storage Junction Temperature Range|-40 to 175|°C| |T~~L~~|
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)|300|°C| |T~~pkg~~|
Max Lead Temp for Soldering (Package Body for 10s)|260|°C| |ESD|
Electrostatic Discharge Voltage at 100pF, 1500Ω (HBM)|4|kV| ## **Package Marking and Ordering Information** |**Device Marking**|**Device Marking**|**Device**|**Package**|**Package**|**Reel Size**|**Reel Size**|**Reel Size**|**Tape Width**|**Tape Width**|**Tape Width**|**Quantity**|**Quantity**| |---|---|---|---|---|---|---|---|---|---|---|---|---| |
V2540S||ISL9V2540S3ST|TO-263AB||330mm|||
24mm|||800 units|| |||||||||||||| |**Electrical Characteristics**TA= 25°C unless otherwise noted||||||||||||| |**Symbol**|**Parameter**|||**Test Conditions**|||**Min**||**Typ**|**Max**||**Units**| |**Off State Characteristics**

||||||||||||| |BVCER|Collector to Emitter Breakdown Voltage|||IC= 2mA, VGE= 0,
RG= 1KΩ, See Fig. 15
T~~J~~= -40 to 150°C|||370||400|430||V| |BVCES|Collector to Emitter Breakdown Voltage|||
IC= 10mA, VGE= 0,
RG= 0,See Fig. 15
T~~J~~= -40 to 150°C|||390||420|450||V| |BVECS|Emitter to Collector Breakdown Voltage|||
IC= -75mA, VGE= 0V,
T~~C~~ =25°C|||30||-|-||V| |BV~~GES~~|Gate to Emitter Breakdown Voltage|||I~~GES~~ =± 2mA|||±12||±14|-||V| |ICER|
Collector to Emitter Leakage Current|||VCER= 250V,
RG= 1KΩ,
See Fig. 11||T~~C~~ =25°C|-||-|25||µA| |||||||TC= 150°C|-||-|1||mA| |IECS|Emitter to Collector Leakage Current|||
VEC= 24V, See
Fig. 11||
T~~C~~ =25°C|-||-|1||mA| |||||||T~~C~~ =150°C|-||-|40||mA| |R~~1~~|Series Gate Resistance||||||-||70|-||Ω| |R~~2~~|Gate to Emitter Resistance||||||10K||-|26K||Ω| |**On State Characteristics**
||||||||||||| |VCE(SAT)|Collector to Emitter Saturation Voltage|||IC= 6A,
V~~GE~~=4V||TC= 25°C,
See Fig. 3|-||1.37|1.8||V| |VCE(SAT)|Collector to Emitter Saturation Voltage|||
IC= 10A,
V~~GE~~=4.5V||
TC= 150°C
See Fig. 4|-||1.77|2.2||V| ©2009 Fairchild Semiconductor Corporation ISL9V2540S3ST Rev A1. www.fairchildsemi.com |**Dynamic Characteristics**|**Dynamic Characteristics**|**Dynamic Characteristics**||||||| |---|---|---|---|---|---|---|---|---| |QG(ON)|Gate Charge|IC= 10A, VCE=
V~~GE~~ =5V, See|12V,
Fig. 14|-|15.1||-|nC| |VGE(TH)|Gate to Emitter Threshold Voltage|
IC= 1.0mA,
VCE= VGE,
See Fig. 10|
T~~C~~ =25°C|1.3|-||2.2|V| ||||TC= 150°C|0.75|-||1.8|V| |VGEP|Gate to Emitter Plateau Voltage|
IC= 10A,
V~~CE~~ =12V||-|3.1||-|V| |**Switching Characteristics**
||||||||| |t~~d(ON)R~~|Current Turn-On Delay Time-Resistive|VCE= 14V, RL
VGE= 5V, RG=
T~~J~~ =25°C|= 1Ω,
1KΩ|-||0.61|-|µs| |triseR|
Current Rise Time-Resistive|||-||2.17|-|µs| |t~~d(OFF)L~~|Current Turn-Off Delay Time-Inductive|VCE= 300V, L = 500µHy,
VGE= 5V, RG= 1KΩ
T~~J~~ =25°C, See Fig. 12||-||3.64|-|µs| |tfL|
Current Fall Time-Inductive|||-||2.36|-|µs| |SCIS|Self Clamped Inductive Switching|
TJ= 25°C, L = 3.0mHy,
RG= 1KΩ,VGE= 5V, See
Fig. 1 & 2||-||-|250|mJ| |**Thermal Characteristics**
||||||||| |R~~θJC~~|Thermal Resistance Junction-Case|TO-263||-||-|0.9|°C/W| ©2009 Fairchild Semiconductor Corporation ISL9V2540S3ST Rev A1. www.fairchildsemi.com **==> picture [431 x 623] intentionally omitted <==** **----- Start of picture text -----**
Typical Performance Curves
40 40
RG = 1K Ω , VGE = 5V,Vdd = 14V RG = 1K Ω , VGE = 5V,Vdd = 14V
35 35
30 30
25 25
TJ = 25°C
20 20
TJ = 25°C
15 15
10 10
TJ = 150°C TJ = 150°C
5 5
SCIS Curves valid for Vclamp Voltages of <430V SCIS Curves valid for Vclamp Voltages of <430V
0 0
0 25 50 75 100 125 150 175 200 0 1 2 3 4 5 6 7 8 9 10
tCLP, TIME IN CLAMP (µS) L, INDUCTANCE (mHy)
Figure 1. Self Clamped Inductive Switching Figure 2. Self Clamped Inductive Switching
Current vs Time in Clamp Current vs Inductance
1.55 2.2
ICE = 6A VGE = 3.5V ICE = 10A
2.1
1.50 VGE = 3.5V
2.0
1.45 VGE = 4.0V V GE = 4.5V 1.9 VGE = 4.0V
1.40 1.8
1.7
1.35 VGE = 4.5V
1.6
1.30 V GE = 5.0V VGE = 5.0V
1.5
VGE = 10.0V VGE = 10.0V
1.25 1.4
-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Collector to Emitter On-State Voltage vs Figure 4. Collector to Emitter On-State Voltage
Junction Temperature vs Junction Temperature
20 20
VGE = 10.0V VGE = 10.0V
VGE = 5.0V VGE = 5.0V
15 VGE = 4.5V 15 V GE = 4.5V
VGE = 4.0V VGE = 4.0V
VGE = 3.5V VGE = 3.5V
VGE = 3.0V VGE = 3.0V
10 10
5 5
TJ = - 40°C TJ = 25°C
0 0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector to Emitter On-State Voltage vs Figure 6. Collector to Emitter On-State Voltage
Collector Current vs Collector Current
, INDUCTIVE SWITCHING CURRENT (A) , INDUCTIVE SWITCHING CURRENT (A)
ISCIS ISCIS
, COLLECTOR TO EMITTER VOLTAGE (V) , COLLECTOR TO EMITTER VOLTAGE (V)
CE CE
V V
, COLLECTOR TO EMITTER CURRENT (A) , COLLECTOR TO EMITTER CURRENT (A)
ICE ICE
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**==> picture [98 x 11] intentionally omitted <==** **----- Start of picture text -----**
©2009 Fairchild Semiconductor Corporation
ISL9V2540S3ST Rev A1.
**----- End of picture text -----**
www.fairchildsemi.com **Typical Performance Curves** (Continued) **==> picture [428 x 592] intentionally omitted <==** **----- Start of picture text -----**
20 20
VGE = 10.0V DUTY CYCLE < 0.5%, VCE = 5V
VGE = 5.0V PULSE DURATION = 250µs
15 VGE = 4.5V 15
VGE = 4.0V
VGE = 3.5V TJ = 175°C
10 10
VGE = 3.0V
5 5 TJ = 25°C
TJ = 175°C TJ = -40°C
00 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 01.0 1.5 2.0 2.5 3.0 3.5 4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V) VGE, GATE TO EMITTER VOLTAGE (V)
Figure 7. Collector to Emitter On-State Voltage vs Figure 8. Transfer Characteristics
Collector Current
16 2.0
14 VGE = 4.0V VICECE = 1mA = VGE
1.8
12
10
1.6
8
1.4
6
4
1.2
2
0 1.0
25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE (°C) TJ JUNCTION TEMPERATURE (°C)
Figure 9. DC Collector Current vs Case Figure 10. Threshold Voltage vs Junction
Temperature Temperature
10000 10
Inductive tOFF ICE = 6.5A, VGE = 5V, RG = 1K Ω
V ECS = 24V 9
1000
8
7
100
6 Resistive tOFF
10 5
V CES = 300V 4
1
3
VCES = 250V Resistive tON
2
0.1-50 -25 0 25 50 75 100 125 150 175 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
Figure 11. Leakage Current vs Junction Figure 12. Switching Time vs Junction
Temperature Temperature
, COLLECTOR TO EMITTER CURRENT (A) , COLLECTOR TO EMITTER CURRENT (A)
ICE ICE
, THRESHOLD VOLTAGE (V)
TH
, DC COLLECTOR CURRENT (A) V
ICE
SWITCHING TIME (µS)
LEAKAGE CURRENT (µA)
**----- End of picture text -----**
**Figure 7. Collector to Emitter On-State Voltage vs Collector Current** www.fairchildsemi.com ©2009 Fairchild Semiconductor Corporation ISL9V2540S3ST Rev A1. **Typical Performance Curves** (Continued) **==> picture [427 x 568] intentionally omitted <==** **----- Start of picture text -----**
1500 10
FREQUENCY = 1 MHz IG(REF) = 1mA, RL = 1.25 Ω, TJ = 25°C
1250
8
1000
CIES
6 VCE = 12V
750
4
500
CRES
2
250
COES
VCE = 6V
0 0
0 5 10 15 20 25 0 5 10 15 20 25 30 35 40
VCE, COLLECTOR TO EMITTER VOLTAGE (V) QG, GATE CHARGE (nC)
Figure 13. Capacitance vs Collector to Emitter Figure 14. Gate Charge
Voltage
445
440
435 T J = - 40°C
430
425 T J = 175°C
420
TJ = 25°C
415
410
405
10 100 1000 5000
RG, SERIES GATE RESISTANCE ( Ω )
Figure 15. Breakdown Voltage vs Series Gate Resistance
10 [0]
0.5
0.2
0.1
t 1
10 [-1]
0.05 PD
0.02 t2
0.01 DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X Z θ JC X R θ JC) + TC
SINGLE PULSE
10 [-2]
10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1]
T1, RECTANGULAR PULSE DURATION (s)
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
C, CAPACITANCE (pF)
, GATE TO EMITTER VOLTAGE (V)
GE
V
, BREAKDOWN VOLTAGE (V)
CER
BV
, NORMALIZED THERMAL RESPONSE
ZJC θ
**----- End of picture text -----**
www.fairchildsemi.com ©2009 Fairchild Semiconductor Corporation ISL9V2540S3ST Rev A1. ## **Test Circuit and Waveforms** **==> picture [421 x 334] intentionally omitted <==** **----- Start of picture text -----**
L
VCE R
or LOAD
L
C
C
PULSEGEN RG G DUT RG = 1K Ω G DUT + VCE
5V -
E
E
Figure 17. Inductive Switching Test Circuit Figure 18. tON and tOFF Switching Test Circuit
VCE BVCES
tP
L VCE
IAS
VARY tP TO OBTAIN + VDD
REQUIRED PEAK IAS RG VDD
VGE -
DUT
tP
0V IAS 0
0.01 Ω
tAV
**----- End of picture text -----**
**Figure 19. Unclamped Energy Test Circuit** **Figure 20. Unclamped Energy Waveforms** ©2009 Fairchild Semiconductor Corporation ISL9V2540S3ST Rev A1. www.fairchildsemi.com ## _**SPICE Thermal Model**_ **th JUNCTION** REV 16 May 2005 ISL9V2540S3ST CTHERM1 th 6 19e -4 CTHERM2 6 5 12e -3 **RTHERM1 CTHERM1** CTHERM3 5 4 15e -3 CTHERM4 4 3 25e -3 **6** CTHERM5 3 2 69e -3 CTHERM6 2 tl 100e -3 **RTHERM2 CTHERM2** RTHERM1 th 6 80e -3 **5** RTHERM2 6 5 81e -3 RTHERM3 5 4 82e -3 RTHERM4 4 3 100e -3 **RTHERM3 CTHERM3** RTHERM5 3 2 150e -3 RTHERM6 2 tl 1645e -4 **4** _**SABER Thermal Model**_ **RTHERM4 CTHERM4** ISL9V2540S3ST template thermal_model th tl thermal_c th, tl **3** { ctherm.ctherm1 th 6 = 19e -4 **RTHERM5 CTHERM5** ctherm.ctherm2 6 5 = 12e -3 ctherm.ctherm3 5 4 = 15e -3 **2** ctherm.ctherm4 4 3 = 25e -3 ctherm.ctherm5 3 2 = 69e -3 **RTHERM6 CTHERM6** ctherm.ctherm6 2 tl = 100e -3 rtherm.rtherm1 th 6 = 80e -3 rtherm.rtherm2 6 5 = 81e -3 rtherm.rtherm3 5 4 = 82e -3 **tl CASE** rtherm.rtherm4 4 3 = 100e -3 rtherm.rtherm5 3 2 = 150e -3 rtherm.rtherm6 2 tl = 1645e -4 } ©2009 Fairchild Semiconductor Corporation ISL9V2540S3ST Rev A1. www.fairchildsemi.com ## **TRADEMARKS** The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. 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anymanner without notice.| |Preliminary|First Production|Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at anytime without notice to improve design.| |No Identification Needed|Full Production|Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at anytime without notice to improve the design.| |Obsolete|Not In Production|Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
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