# IGBT, 10 A, 1.45 V, 130 W, 400 V, TO-252 (DPAK), 3 Pins ![Product image](https://novapart.co/image/farnell:3615802/) **URL**: https://novapart.co/products/ISL9V2040D3STV/igbt-10-a-145-v-130-w-400-to-252-dpak-3-pins **SKU**: ISL9V2040D3STV **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || IGBTs || Single IGBTs **Price**: €0.6700 **Stock**: 10+ ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (15-Jan-2018) | | No. Of Pins | 3Pins | | Product Range | - | | Power Dissipation | 130W | | Transistor Mounting | Surface Mount | | Transistor Case Style | TO-252 (DPAK) | | Operating Temperature Max | 175°C | | Continuous Collector Current | 10A | | Collector Emitter Voltage Max | 400V | | Collector Emitter Saturation Voltage | 1.45V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3615802/) ## **Is Now Part of** ## **To learn more about ON Semiconductor, please visit our website at www.onsemi.com** Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **October 2013** ## **ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3** ## **EcoSPARK[®] 200mJ** _**,**_ **400V, N-Channel Ignition IGBT** ## **General Description** The ISL9V2040D3S, ISL9V2040S3S, and ISL9V2040P3 are the next generation ignition IGBTs that offer outstanding SCIS capability in the space saving D-Pak (TO-252), as well as the industry standard D²-Pak (TO-263) and TO-220 plastic packages. This device is intended for use in automotive ignition circuits, specifically as a coil driver. Internal diodes provide voltage clamping without the need for external components. **EcoSPARK®** devices can be custom made to specific clamp voltages. Contact your nearest Fairchild sales office for more information. ## **Applications** - Automotive Ignition Coil Driver Circuits - • Coil- On Plug Applications **Features** • Space saving D - Pak package available • SCIS Energy = 200mJ at TJ = 25[o] C - Logic Level Gate Drive Formerly Developmental Type 49444 ## **Package** ## **Symbol** **==> picture [410 x 106] intentionally omitted <==** **----- Start of picture text -----**
COLLECTOR
JEDEC TO-252AA JEDEC TO-263AB JEDEC TO-220AB
E
D-Pak D²-Pak C
G
R1
GATE
G
G
E R2
E
EMITTER
COLLECTOR COLLECTOR
(FLANGE) (FLANGE)
**----- End of picture text -----**
**Device Maximum Ratings** TA = 25°C unless otherwise noted |**Device Maximum Ratings **TA = 25°C unless otherwise notedA = 25°C unless otherwise noted= 25°C unless otherwise noted|| |---|---| |**Parameter**|**Ratings**| |Collector to Emitter Breakdown Voltage(IC = 1 mA)|430| |Emitter to Collector Voltage - Reverse BatteryCondition(IC = 10 mA)|24| |At StartingTJ= 25°C, ISCIS= 11.5A, L = 3.0mHy|200| |At StartingTJ= 150°C, ISCIS= 8.9A, L = 3.0mHy|120| |Collector Current Continuous, At TC= 25°C, See Fig9|10| |Collector Current Continuous, At TC= 110°C, See Fig9|10| |Gate to Emitter Voltage Continuous|±10| |Power Dissipation Total TC= 25°C|130| |Power Dissipation DeratingTC> 25°C|0.87| |OperatingJunction Temperature Range|-40 to 175| |Storage Junction Temperature Range|-40 to 175| |Max Lead Tempfor Soldering (Leads at 1.6mm from Case for 10s)|300| |Max Lead Tempfor Soldering (Package Bodyfor 10s)|260| |Electrostatic Discharge Voltage at 100pF, 1500Ω|4| ©2004 Fairchild Semiconductor Corporation ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B4, October 2013 ## **Package Marking and Ordering Information** |**Device Marking**|**Device Marking**|**Device**|**Package**|**Package**|**Reel Size**|**Reel Size**||**Tape Width**|**Tape Width**|**Tape Width**|**Tape Width**|**Quantity**|**Quantity**| |---|---|---|---|---|---|---|---|---|---|---|---|---|---| |V2040D||ISL9V2040D3ST|TO-252AA||330mm|||16mm||||2500|| |V2040S||ISL9V2040S3ST|TO-263AB||330mm|||24mm||||800|| |V2040P||ISL9V2040P3|TO-220AB||Tube|||N/A||||50|| |V2040D||ISL9V2040D3S|TO-252AA||Tube|||N/A||||75|| |V2040S||ISL9V2040S3S|TO-263AB||Tube|||N/A||||50|| |**Electrical Characteristics**TA= 25°C unless otherwise noted|||||||||||||| |**Symbol**|**Parameter**|||**Test Conditions**|||**Min**||**Typ**||**Max**||**Units**| |**Off State Characteristics**|||||||||||||| |BVCER|Collector to Emitter Breakdown Voltage|||IC= 2mA, VGE= 0,
RG= 1KΩ, See Fig. 15
TJ = -40 to 150°C|||370||400||430||V| |BVCES|Collector to Emitter Breakdown Voltage|||IC= 10mA, VGE= 0,
RG= 0,See Fig. 15
TJ = -40 to 150°C|||390||420||450||V| |BVECS|Emitter to Collector Breakdown Voltage|||IC= -75mA, VGE= 0V,
TC= 25°C|||30||-||-||V| |BVGES|Gate to Emitter Breakdown Voltage|||IGES= ± 2mA|||±12||±14||-||V| |ICER|Collector to Emitter Leakage Current|||VCER= 250V,
RG= 1KΩ,
See Fig. 11||TC= 25°C|-||-||25||µA| |||||||TC= 150°C|-||-||1||mA| |IECS|Emitter to Collector Leakage Current|||VEC= 24V, See
Fig. 11||
TC= 25°C|-||-||1||mA| |||||||TC= 150°C|-||-||40||mA| |R1|Series Gate Resistance||||||-||70||-||Ω| |R2|Gate to Emitter Resistance||||||10K||-||26K||Ω| |**On State Characteristics**|||||||||||||| |VCE(SAT)|Collector to Emitter Saturation Voltage|||IC= 6A,
VGE= 4V||TC= 25°C,
See Fig. 3|-||1.45||1.9||V| |VCE(SAT)|Collector to Emitter Saturation Voltage|||IC= 10A,
VGE= 4.5V||TC= 150°C
See Fig. 4|-||1.95||2.3||V| |**Dynamic Characteristics**|||||||||||||| |QG(ON)|Gate Charge|||IC= 10A, VCE=
VGE= 5V, See||12V,
Fig. 14|-||12||-||nC| |VGE(TH)|Gate to Emitter Threshold Voltage|||IC= 1.0mA,
VCE= VGE,
See Fig. 10||TC= 25°C|1.3||-||2.2||V| |||||||TC= 150°C|0.75||-||1.8||V| |VGEP|Gate to Emitter Plateau Voltage|||IC = 10A, VCE=||12V|-||3.4||-||V| |**Switching Characteristics**|||||||||||||| |td(ON)R|Current Turn-On DelayTime-Resistive|||VCE= 14V, RL=
VGE= 5V, RG=
TJ= 25°C||1Ω,
1KΩ|-|||0.61|-||µs| |triseR|Current Rise Time-Resistive||||||-|||2.17|-||µs| |td(OFF)L|Current Turn-Off DelayTime-Inductive|||VCE= 300V, L = 500µHy,
VGE= 5V, RG= 1KΩ
TJ= 25°C, See Fig. 12|||-|||3.64|-||µs| |tfL|Current Fall Time-Inductive||||||-|||2.36|-||µs| |SCIS|Self Clamped Inductive Switching|||TJ= 25°C, L = 3.0mHy,
RG= 1KΩ, VGE= 5V, See
Fig. 1 & 2|||-|||-|200||mJ| |**Thermal Characteristics**|||||||||||||| |RθJC|Thermal Resistance Junction-Case|||TO-252, TO-263, TO-220|||-|||-|1.15||°C/W| ©2004 Fairchild Semiconductor Corporation ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B4, October 2013 ## **Typical Performance Curves** **==> picture [429 x 594] intentionally omitted <==** **----- Start of picture text -----**
20 20
RG = 1K Ω , VGE = 5V,Vdd = 14V RG = 1K Ω , VGE = 5V,Vdd = 14V
18 18
16 16
14 14
12 TJ = 25°C 12 TJ = 25°C
10 T J = 150°C 10
8 8
TJ = 150°C
6 6
4 4
2 2
SCIS Curves valid for Vclamp Voltages of <430V SCIS Curves valid for Vclamp Voltages of <430V
0 0
0 20 40 60 80 100 120 140 160 180 200 0 2 4 6 8 10
tCLP, TIME IN CLAMP (µS) L, INDUCTANCE (mHy)
Figure 1. Self Clamped Inductive Switching Figure 2. Self Clamped Inductive Switching
Current vs Time in Clamp Current vs Inductance
1.60 2.4
ICE = 6A ICE = 10A
1.55 V GE = 3.7V 2.2 VGE = 3.7V
1.50 V GE = 4.0V VGE = 4.0V
2.0
1.45
1.40
1.8
VGE = 4.5V
1.35 V GE = 4.5V
VGE = 5.0V 1.6
1.30 VGE = 5.0V
VGE = 8.0V VGE = 8.0V
1.25 1.4
-75 -25 25 75 125 175 -75 -25 25 75 125 175
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Collector to Emitter On-State Voltage vs Figure 4. Collector to Emitter On-State Voltage
Junction Temperature vs Junction Temperature
20 20
VGE = 8.0V VGE = 8.0V
VGE = 5.0V VGE = 5.0V
15 VGE = 4.5V 15 VGE = 4.5V
VGE = 4.0V VGE = 4.0V
VGE = 3.7V VGE = 3.7V
10 10
5 5
TJ = - 40°C TJ = 25°C
0
0
0 1.0 2.0 3.0 4.0 0 1.0 2.0 3.0 4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector to Emitter On-State Voltage vs Figure 6. Collector to Emitter On-State Voltage
Collector Current
, INDUCTIVE SWITCHING CURRENT (A) , INDUCTIVE SWITCHING CURRENT (A)
ISCIS ISCIS
, COLLECTOR TO EMITTER VOLTAGE (V) , COLLECTOR TO EMITTER VOLTAGE (V)
CE CE
V V
, COLLECTOR TO EMITTER CURRENT (A) , COLLECTOR TO EMITTER CURRENT (A)
ICE ICE
**----- End of picture text -----**
**Figure 4. Collector to Emitter On-State Voltage vs Junction Temperature** **Figure 6. Collector to Emitter On-State Voltage vs Collector Current** ©2004 Fairchild Semiconductor Corporation ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B4, October 2013 **==> picture [468 x 650] intentionally omitted <==** **----- Start of picture text -----**
Typical Performance Curves (Continued)
20 30
VGE = 8.0V DUTY CYCLE < 0.5%, VCE = 5V
VGE = 5.0V PULSE DURATION = 250µs
25
VGE = 4.5V
15
VGE = 4.0V
20
VGE = 3.7V
10 15
TJ = 150°C
10
5 TJ = 25°C
5
TJ = 175°C TJ = -40°C
0 0 1.0 2.0 3.0 4.0 0 1.0 2.0 3.0 4.0 5.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V) VGE, GATE TO EMITTER VOLTAGE (V)
Figure 7. Collector to Emitter On-State Voltage vs Figure 8. Transfer Characteristics
Collector Current
15.0 2.4
VGE = 4.0V VCE = VGE
2.2 ICE = 1mA
12.5
2.0
10.0
1.8
7.5
1.6
5.0
1.4
2.5
1.2
0
25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE (°C) TJ JUNCTION TEMPERATURE (°C)
Figure 9. DC Collector Current vs Case Figure 10. Threshold Voltage vs Junction
Temperature Temperature
10000 10
ICE = 6.5A, VGE = 5V, RG = 1K Ω
V ECS = 24V
1000 Inductive tOFF
8
100
6
10 Resistive tOFF
VCES = 300V
4
1
VCES = 250V Resistive tON
0.1 2
-50 -25 0 25 50 75 100 125 150 175 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
Figure 11. Leakage Current vs Junction Figure 12. Switching Time vs Junction
Temperature Temperature
, COLLECTOR TO EMITTER CURRENT (A) , COLLECTOR TO EMITTER CURRENT (A)
ICE ICE
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3
, THRESHOLD VOLTAGE (V)
TH
, DC COLLECTOR CURRENT (A) V
ICE
SWITCHING TIME (µS)
LEAKAGE CURRENT (µA)
**----- End of picture text -----**
©2004 Fairchild Semiconductor Corporation ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B4, October 2013 **==> picture [207 x 12] intentionally omitted <==** **----- Start of picture text -----**
Typical Performance Curves (Continued)
**----- End of picture text -----**
**==> picture [426 x 165] intentionally omitted <==** **----- Start of picture text -----**
1200 8
FREQUENCY = 1 MHz IG(REF) = 1mA, RL = 1.25 Ω, TJ = 25°C
7
1000
6
800 VCE = 12V
5
CIES
600 4
3
400
CRES 2
VCE = 6V
200
COES 1
0 0
0 5 10 15 20 25 0 5 10 15 20 25
VCE, COLLECTOR TO EMITTER VOLTAGE (V) QG, GATE CHARGE (nC)
C, CAPACITANCE (pF)
, GATE TO EMITTER VOLTAGE (V)
GE
V
**----- End of picture text -----**
**==> picture [372 x 20] intentionally omitted <==** **----- Start of picture text -----**
Figure 13. Capacitance vs. Collector to Emitter Figure 14. Gate Charge
Voltage
**----- End of picture text -----**
**==> picture [418 x 355] intentionally omitted <==** **----- Start of picture text -----**
415
ICER = 10mA
410
405 TJ = - 40°C
400
395
TJ = 175°C
390 T J = 25°C
385
380
375
370
10 100 1000 2000 3000
RG, SERIES GATE RESISTANCE ( Ω )
Figure 15. Breakdown Voltage vs. Series Gate Resistance
10 [0]
0.5
0.2
0.1 t1
10 [-1] 0.05 PD
t2
0.02
0.01 DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X Z θ JC X R θ JC) + TC
SINGLE PULSE
10 [-2]
10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]
T1, RECTANGULAR PULSE DURATION (s)
, BREAKDOWN VOLTAGE (V)
CER
BV
, NORMALIZED THERMAL RESPONSE
thJC
Z
**----- End of picture text -----**
**Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case** ©2004 Fairchild Semiconductor Corporation ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B4, October 2013 ## **Test Circuit and Waveforms** **==> picture [421 x 334] intentionally omitted <==** **----- Start of picture text -----**
L
VCE R
or LOAD
L
C
C
PULSEGEN RG G DUT RG = 1K Ω G DUT + VCE
5V -
E
E
Figure 17. Inductive Switching Test Circuit Figure 18. tON and tOFF Switching Test Circuit
VCE BVCES
tP
L VCE
IAS
VARY tP TO OBTAIN + VDD
REQUIRED PEAK IAS RG VDD
VGE -
DUT
tP
0V IAS 0
0.01 Ω
tAV
**----- End of picture text -----**
**Figure 19. Unclamped Energy Test Circuit** **Figure 20. Unclamped Energy Waveforms** ©2004 Fairchild Semiconductor Corporation ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B4, October 2013 _**SPICE Thermal Model**_ **th JUNCTION** REV 25 April 2002 ISL9V2040D3S, ISL9V2040S3S, ISL9V2040P3 CTHERM1 th 6 1.3e -2 CTHERM2 6 5 8.8e -4 CTHERM3 5 4 8.8e -3 **RTHERM1 CTHERM1** CTHERM4 4 3 3.9e -1 CTHERM5 3 2 3.6e -1 CTHERM6 2 tl 1.9e -1 **6** RTHERM1 th 6 1.2e -1 RTHERM2 6 5 3.2e -1 RTHERM3 5 4 1.7e -1 **RTHERM2 CTHERM2** RTHERM4 4 3 1.2e -1 RTHERM5 3 2 1.3e -1 RTHERM6 2 tl 2.5e -1 **5** _**SABER Thermal Model**_ SABER thermal model ISL9V2040D3S, ISL9V2040S3S, ISL9V2040P3 **RTHERM3 CTHERM3** template thermal_model th tl thermal_c th, tl { **4** ctherm.ctherm1 th 6 = 1.3e -3 ctherm.ctherm2 6 5 = 8.8e -4 ctherm.ctherm3 5 4 = 8.8e -3 **RTHERM4 CTHERM4** ctherm.ctherm4 4 3 = 3.9e -1 ctherm.ctherm5 3 2 = 3.6e -1 ctherm.ctherm6 2 tl = 1.9e -1 **3** rtherm.rtherm1 th 6 = 1.2e -1 rtherm.rtherm2 6 5 = 3.2e -1 rtherm.rtherm3 5 4 = 1.7e -1 **RTHERM5 CTHERM5** rtherm.rtherm4 4 3 = 1.2e -1 rtherm.rtherm5 3 2 = 1.3e -1 rtherm.rtherm6 2 tl = 2.5e -1 } **2 RTHERM6 CTHERM6 tl CASE** ©2004 Fairchild Semiconductor Corporation ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B4, October 2013 ## **TRADEMARKS** The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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in anymanner without notice.| |Preliminary|First Production|Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at anytime without notice to improve design.| |No Identification Needed|Full Production|Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at anytime without notice to improve the design.| |Obsolete|Not In Production|Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
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