# Power MOSFET, N Channel, 40 V, 121 A, 2100 µohm, TDSON-FL, Surface Mount

![Product image](https://novapart.co/image/farnell:3577372RL/)

**URL**: https://novapart.co/products/ISC028N04NM5ATMA1/power-mosfet-n-channel-40-v-121-a-2100-ohm-tdson
**SKU**: ISC028N04NM5ATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3040
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | OptiMOS 5 |
| Qualification | - |
| Power Dissipation | 75W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 75W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.0021ohm |
| Transistor Case Style | TDSON-FL |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 121A |
| Drain Source On State Resistance | 2100µohm |
| Automotive Qualification Standard | - |
| Gate Source Threshold Voltage Max | 3.4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3577372RL/)

**ISC028N04NM5** 

## **MOSFET** 

## **OptiMOS** 

## **Features** 

_R_ DS(on) 

|**Parameter**<br>~~Table~~<br>1<br>~~Key Performance~~|**Value**<br>~~Performance Parameters~~|**Unit**<br>~~Parameters~~|
|---|---|---|
|_V_DS|40|V|
|_R_DS(on),max|2.8|mΩ|
|_I_D|121|A|
|_Q_oss|31|nC|
|_Q_G(0V..10V)|29|nC|



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|~~Type/OrderingCode~~<br>~~|~~|**Package**<br>~~|~~<br>~~|~~|**Marking**|~~RelatedLinks~~|
|---|---|---|---|
|ISC028N04NM5<br>~~Type/OrderingCode~~<br>~~|~~|TDSON-8 FL<br>~~|~~<br>~~|~~|28N04NM5|-<br>~~Related Links~~|



Final Data Sheet 

1 

**OptiMOS[TM�] 5�Power-Transistor,�40�V ISC028N04NM5** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 

Final Data Sheet 

2 

Rev.�2.1,��2020-03-22 

**OptiMOS[TM�] 5�Power-Transistor,�40�V ISC028N04NM5** 

**==> picture [120 x 53] intentionally omitted <==**

**1�����Maximum�ratings** at� _T_ A=25�°C,�unless�otherwise�specified 

## **Table�2�����Maximum�ratings** 

|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current1)|_I_D|-<br>-<br>-<br>-<br>-|-<br>-<br>-<br>-<br>-|121<br>86<br>110<br>78<br>24|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_C=100°C<br>_V_GS=7V,_T_C=25°C<br>_V_GS=7V,_T_C=100°C<br>_V_GS=10V,_T_A=25°C,<br>_R_THJA=50°C/W2)|
|Pulsed drain current3)|_ID,pulse_|-|-|484|A|_T_C=25°C|
|Avalanche energy, single pulse4)|_E_AS|-|-|64|mJ|_I_D=50A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-<br>-|-<br>-|75<br>3.0|W|_T_C=25°C<br>_T_A=25°C,_R_THJA=50°C/W2)|
|Operating and storage temperature|_T_j,_T_stg|-55|-|175|°C|IEC climatic category; DIN IEC 68-1:<br>55/175/56|



## **2�����Thermal�characteristics** 

## **Table�3�����Thermal�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance, junction - case,<br>bottom|_R_thJC|-|-|2|°C/W|-|
|Thermal resistance, junction - case,<br>top|_R_thJC|-|-|20|°C/W|-|
|Device on PCB,<br>6 cm² cooling area|_R_thJA|-|-|50|°C/W|-|



> 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher Tcase please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 

> 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 

> 4) See Diagram 13 for more detailed information 

Final Data Sheet 

3 

Rev.�2.1,��2020-03-22 

**OptiMOS[TM�] 5�Power-Transistor,�40�V ISC028N04NM5** 

**==> picture [120 x 53] intentionally omitted <==**

## **3�����Electrical�characteristics** 

at� _T_ j=25�°C,�unless�otherwise�specified 

## **Table�4�����Static�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|40|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|2.2|-|3.4|V|_V_DS=_V_GS,_I_D=30µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|1<br>100|µA|_V_DS=40V,_V_GS=0V,_T_j=25°C<br>_V_DS=40V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|2.1<br>2.4|2.8<br>3.4|mΩ|_V_GS=10V,_I_D=50A<br>_V_GS=7V,_I_D=50A|
|Gate resistance|_R_G|-|2.1|3|Ω|-|
|Transconductance|_g_fs|-|160|-|S||_V_DS|≥2|_I_D|_R_DS(on)max,_I_D=50A|



## **Table�5�����Dynamic�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance|_C_iss|-|2100|2700|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz|
|Output capacitance1)|_C_oss|-|750|980|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz|
|Reverse transfer capacitance1)|Crss|-|73|130|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|7|-|ns|_V_DD=20V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=1.6Ω|
|Rise time|_t_r|-|4|-|ns|_V_DD=20V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=1.6Ω|
|Turn-off delay time|_t_d(off)|-|16|-|ns|_V_DD=20V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=1.6Ω|
|Fall time|_t_f|-|5|-|ns|_V_DD=20V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=1.6Ω|



## **Table�6�����Gate�charge�characteristics[2)]** 

|**Table6Gatechargecharacte**|**ristics2)**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|9|-|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Gate charge at threshold|_Q_g(th)|-|6|-|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Gate to drain charge1)|_Q_gd|-|5|7.5|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Switchingcharge|_Q_sw|-|9|-|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Gate charge total1)|_Q_g|-|29|38|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|4.4|-|V|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Gate charge total, sync. FET|_Q_g(sync)|-|26|-|nC|_V_DS=0.1V,_V_GS=0to10V|
|Output charge|_Q_oss|-|31|-|nC|_V_DD=20V,_V_GS=0V|



> 1) Defined by design. Not subject to production test. 

> 2) See ″ Gate charge waveforms ″ for parameter definition Final Data Sheet 

Rev.�2.1,��2020-03-22 

4 

**OptiMOS[TM�] 5�Power-Transistor,�40�V ISC028N04NM5** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�7�����Reverse�diode** 

|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|75|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|484|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|0.87|1|V|_V_GS=0V,_I_F=50A,_T_j=25°C|
|Reverse recoverytime|_t_rr|-|43|-|ns|_V_R=20V,_I_F=50A,d_i_F/d_t_=100A/µs|
|Reverse recoverycharge|_Q_rr|-|34|-|nC|_V_R=20V,_I_F=50A,d_i_F/d_t_=100A/µs|



Final Data Sheet 

Rev.�2.1,��2020-03-22 

5 

**OptiMOS ISC028N04NM5** 

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**----- Start of picture text -----**<br>
80 125<br>70 a a Ne e ee 0 a SCa SS<br>TXT PP a NO<br>100<br>60 PFPotof :\IXff fff aNGPN<br>50 P| ON<br>| NN | | ff | 75 |} Nf<br>— {ft | KE | ft ft a a<br>= Se<br>40<br>: 0 eeee<br>eee A<br>50<br>30 tA}es ee eeee ee NEaa a<br>20 a ee ee ee SSSeg ee ee ee<br>25<br>10 a ee ee ee a|<br>a A<br>0 PF of fF tN 0 a<br>0 25 50 75 100 125 150 175 200 0 25 50 75 100 125 150 175 200<br>T C [°C] T C [°C]<br>0 P tot=f( T C) I D=f( T C V GS ≥<br>P tot I D<br>**----- End of picture text -----**<br>


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10 [3] 10 [1]<br>single pulse<br>0.01<br>a a es 1 µs i 0.02 |<br>0.05<br>10 [2] CTS 10 µs | ' 0.1 100 A<br>0.2<br>0.5<br>10 [1] P_7_CETANNEEEZTNGAEN, SoS 100 µs ETll 10 [0] FEE Eeme ca W llehee)cafet||| r te|| II<br>SNE SS rT<br>1 ms<br>CTT ENN CCITT PTTL TTI TTT<br>10 [0] DC<br>SSSee SSS SSSMe 10 ms ee | 10 [-1] ATyGf UIE TTTTI<br>ee eS PP<br>EEA<br>NSPE | Set<br>10 [-1] NG ll Con<br>ee es es ee ee es eee SESE aa<br>ee ees ees ener a|<br>Fn CEell LENA CHIME- ELAINE<br>10 [-2] ee 10 [-2] LT<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>V DS Na t p [s]<br>I D=f( V DS T C D t p Z thJC=f( t p D = t p/ T<br>I D thJC<br>Z<br>**----- End of picture text -----**<br>


Final Data Sheet 

6 

**OptiMOS ISC028N04NM5** 

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**----- Start of picture text -----**<br>
400 7<br>4.5 V<br>PEEL LAL EEE a<br>350 10 V 7 V 6<br>HOARECLF/ASIUBRIEEAUBEALLEEf ———<br>5 V<br>300<br>5<br>250 SoSENEE//fpeccccccccnccnAUAAAAAOEOEEESEERERERE | Lyaoe [CC] A a<br>4<br>er 200 AE a<br>ee ee<br>3<br>150 FEN /AMEEGRAAOREESESEESeoeee| eas 5 V oea<br>7 V<br>LZMEE 2 SSee 10 V<br>100<br>YlI \/ ————_——|Sa<br>1<br>50 PALLET 4.5 V Se eee<br>poVATE aa<br>4 V<br>0 VI 0 ee a<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 150 175 200<br>V DS I D<br>[Vv] [A]<br>|) I D=f( V DS T j =25°C;parameter: V GS 25°C R DS(on)=f( I D T j parameters V GS<br>[Diagram 7: Typ. transfer characteristics «| [Diagram8:Typ.drain-sourceonresistance]<br>200 7<br>|<br>ATTA AEA Oe SSS Cee<br>175<br>6<br>SSS<br>eS a<br>TAA SESS<br>150<br>| | 5 a<br>NUTT SS ee<br>125<br>| | 4 EERE<br>_ / FEECECEEEE EEEEEEEECNSECEEEEEsr 175 °C<br>< 100 | EBe COOGeeeeee eee ooo_<br>SS<br>3<br>FREE E EEE REE EEE<br>75 LLL EEE)| | GEERFREE EEE eee SEE<br>25 °C<br>ee eee —<br>2<br>ELLER PEPE EE Eee eee eee<br>50 WLU] |) EEEEEEEEEEEEraTFREE See<br>175 °C / PREECE eee eee ee eee<br>25 / 25 °C 1 FREEFREER EEE EEE eee eee eee<br>+> FREER EE eee ee<br>J Eeeeee eeeee<br>0 TATE LLYSZ6y,/ 0 ECECFREPR E  EEER Eee eEeeECEeeeeee eeeeee eeee ee<br>0 1 2 3 4 5 0 2 4 6 8 10<br>V GS V GS<br>[Vv] [Vv]<br>I D=f( V GS V DS|>2| I D| R DS(on)max T j R DS(on)=f( V GS I D T j<br>| Li parameters | 50 Aparameter:<br>] Ω<br>I D<br>DS(on)<br>R<br>] Ω<br>I D<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


Final Data Sheet 

7 

**OptiMOS ISC028N04NM5** 

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**----- Start of picture text -----**<br>
2.0 3.5<br>TOLL PCEECELEELELEC TEEaq HEHE HEE<br>CCECECCEC CeCe 3.0 LLPRSSNNEE EEE<br>1.6 LETTEPUTT T TTT TTT TT AT7 PLEANNNUELEEEEEE| NQ<br>2.5<br>5 T TTT TTT TTT ETT TTA TT TOTP NO NNOTETTT<br>FP COO NN<br>se 1.2 PCPEeeeeeeeee LEE ALLELE LLL EEPNEEE<br>HHH 2.0 PLETE ELPAN-ENUELTL<br>2s te aN<br>|©cereaeee 300 µA<br>1.5<br>0.8<br>&§ Ceo \<br>a Le 1.0 PEELE EEE<br>30 µA<br>PLETE ELE EEE ELE LEE EL ELE TTT TTT<br>0.4 PCEPCELELLELELEEPCEPEECELELELLELELELLPCECECELELELELELELEELEL EEEELL ELE 0.5 TIPPEEELLE<br>PCEPCELELELELLELELEL<br>0.0 PCEECECECL ELECELL 0.0 FLEEELE LE<br>-80 -40 0 40 80 120 160 200 -80 -40 0 40 80 120 160 200<br>T j [°C] T j [°C]<br>R DS(on)=f( T j I D V GS V GS(th=f( T j V GS= V DS I D<br>GS(th)<br>V<br>R<br>**----- End of picture text -----**<br>


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10 [4] 10 [3]<br>= ee  /— 25 °C aeeEE<br>Se 25 °C, max SSS SSSSSSSSSsSaSSeae<br>Yr : 175 °C BEER EEE<br>a| [| | | eeetT [| [ [— [ [— [| 7 JT JT [| \ S U 175 °C, max BERRterrestresAe<br>10 [3] EPPAPROTEELTTT Ciss | 10 [2] T LLT T eeeer<br>a SEEEEEEEEEEEEES Cee ceeeeee eee<br>gS | A<br>Se HO a SO ee<br>ac Ni ft [ fT ft ff tf ft 7 Poel tT _ SER eee)eRea e<br>& N | | | tt ft tt tt Coss PETE EEE LTTE APA<br>Hana<br>10 [2] 10 [1]<br>Pd Senessesuey oae//saeS=ceeeesee2<br>a DG¢Ran Raa gMeeAeee eee<br>yp | | [| ~— ~—| [~— [~— — \X JT JT Tt T JT 7 See eee<br>Pt {| | | | ft | tT [Xb ft tT tt SER ee<br>I LLELEL EEE ELE<br>Crss<br>10 [1] COCR | cI 10 [0]<br>0 5 10 15 20 25 30 35 40 0.00 0.25 0.50 0.75 1.00 1.25 1.50<br>V DS V SD<br>[Vv] [Vv]<br>C =f( V DS V GS f I F=f( V SD T j<br>C I F<br>**----- End of picture text -----**<br>


Final Data Sheet 

8 

**OptiMOS ISC028N04NM5** 

**==> picture [526 x 283] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 [2] ———=. a se eee 10 eee 8 V tee 44<br>a | 20 V PETE ETE Y ArT<br>32 V<br>SS TTT TTT TTT TTT TT Aart |<br>PNET  N ES Fae<br>8<br>PSST SSIS 25 °C TT SUUEEEEEEEEEEEEEEEEEET<br>SST PP) SN FECES2° CORRE<br>ELA LUTON CCEA{|<br>10 [1]<br>aa a Ne 0 ee 6 LETT TTT TT TTTAEEWA f<br>= ee ee ee Ne a rTTT LECT ATT<br><x<x PT TTTETNNU NO > FECLEELELLLELLLis<br>100 °C<br>HTT A ef FEE<br>4 y<br>TT PERE c ee<br>10 [0] Sulll PEEPFCCCA E E<br>150 °C<br>eea oe BSGREP/|SERRRREEEEEEEEESEREEEEE<br>a 2 TTT TAT TTTTTT<br>LT ETT TT BER?GRRE<br>Cio Soy ASSRRERREEES000000000000080<br>10 [-1] 0 ViTT TTT TTT ttt yy TTT ey eee yy yy<br>10 [0] 10 [1] 10 [2] 10 [3] 0 5 10 15 20 25 30<br>t AV [us] Q gate [nC]<br>I AS=f( t AV ); R GS =25 Ω  ; parameter: T j,start V GS=f( Q gate ), I D =50A pulsed, T j =25 °C; parameter: V DD<br>I AV V GS<br>**----- End of picture text -----**<br>


## **Diagram Gate charge waveforms** 

**==> picture [259 x 282] intentionally omitted <==**

**----- Start of picture text -----**<br>
45 TTI TT TIT ITT TT Tt TTT yt yyy yyy yy yy<br>PETrT TTyyTTTeee eeeeT tee eeeeeeyeeeeet ey ee<br>44 Se eee<br>BREE<br>rT TT TT Tete eee yt eee ty eye TT<br>TTT TTT TTT TT ttt tT ty yt yt yy Tyee TT<br>43 BERRRee<br>PTT Ae<br>TTT TTT TT tee ee yt ee ty yy TT<br>PET TT TTT TTT tT ttt Tt yt yt yy Tt ete yy<br>42 rTTTTTT TTeT T TeeterTTTT ITTtetTT yeetTTt tteyeTeTTA tATTTeeeTeT<br>_> PETTTT TTyT TeeterTT ITT TTye eyeTit trytA TIT TTT Te TT<br>= 41 BRR<br>TTiTTTTTITTTTrT TT TTT tT ttt{TTTAr eeTTIT TTTet Titty tt Ty<br>BERR ae<br>40 rT TT TTT TTT TAT Ty ty<br>BRR4<br>BERR4<br>rT TTT TTT yet Tet Te ey ey ee TT<br>39 TTI TT TITYETT TTT TTT tty yy yt eT TT<br>BERRAR<br>ri TT TVET TTT eet Te ty ey ey TT<br>rTITTVETITTri TTT TIT TTT Tt ty yy yyy ey<br>38 COPYET ete tT ye eee ee ye<br>PTT TT TT tee eT eet ee eet ee<br>rT TT TTT eT tee ee ey eet ey ee<br>37 TTT TT TTiTT IT tTty tt tt tit tt tit tt ty<br>-80 -40 0 40 80 120 160 200<br>T j [°C]<br>V BR(DSS)=f( T j I D<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>


Final Data Sheet 

9 

**OptiMOS ISC028N04NM5** 

Final Data Sheet 

10 

**OptiMOS ISC028N04NM5** 

## ISC028N04NM5 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2020-01-30|Release of final version|
|2.1|2020-03-22|Update condition Id pulse, Features and footnotes|



## **Trademarks** 

## **erratum@infineon.com** 

## **Information** 

## **Warnings** 

Final Data Sheet 

11 



## Links

- [View this product on Novapart](https://novapart.co/products/ISC028N04NM5ATMA1/power-mosfet-n-channel-40-v-121-a-2100-ohm-tdson)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/isc028n04nm5atma1/mosfet-n-ch-40v-121a-tdson-fl/dp/3577372RL)
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> Novapart is a B2B electronic component broker that sources across 500+ verified
> distributors in Europe and Asia. Unlike standard online stores, Novapart
> specialises in exactly the cases where availability is the real problem: stock
> shortages, allocation crises, end-of-life components, and cost-reduction
> alternatives. They guarantee delivery even during supply chain disruptions and
> typically respond to quote requests within one business day.
> [Request a quote](https://novapart.co/quote/) — it's free and there's no
> minimum order.
