# Power MOSFET, N Channel, 40 V, 381 A, 7000 µohm, TDSON-FL, Surface Mount

![Product image](https://novapart.co/image/farnell:3680233RL/)

**URL**: https://novapart.co/products/ISC007N04NM6ATMA1/power-mosfet-n-channel-40-v-381-a-7000-ohm-tdson
**SKU**: ISC007N04NM6ATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.1000
**Stock**: 200+
**Lead Time**: 2 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | OptiMOS 6 |
| Qualification | - |
| Power Dissipation | 188W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 188W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 600µohm |
| Transistor Case Style | TDSON-FL |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 381A |
| Drain Source On State Resistance | 7000µohm |
| Automotive Qualification Standard | - |
| Gate Source Threshold Voltage Max | 2.3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3680233RL/)

**ISC007N04NM6** 

## **MOSFET** 

## **OptiMOS** 

## **Features** 

¢ Optimized for Synchronous application ¢ Very low on-resistance _R_ DS(on) 

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|**Parameter**<br>~~Table 1~~<br>~~| Key Performance~~|**Value**<br>~~Performance Parameters~~|**Unit**<br>~~Parameters~~|
|---|---|---|
|_V_DS|40|V|
|_R_DS(on),max|0.7|mΩ|
|_I_D|381|A|
|_Q_oss|103|nC|
|_Q_G(0V..10V)|94|nC|



|~~Type/OrderingCode|~~|**Package**<br>~~||__|~~|**Marking**<br>~~|__|~~Related|Related Links|
|---|---|---|---|
|ISC007N04NM6<br>~~Type/OrderingCode |~~|PG-TDSON-8 FL<br>~~|~~|07N04NM6<br>|-<br>|



Final Data Sheet 

1 

**OptiMOS[TM�] 6�Power-Transistor,�40�V ISC007N04NM6** 

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## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 

Final Data Sheet 

2 

Rev.�2.0,��2020-11-02 

**OptiMOS[TM�] 6�Power-Transistor,�40�V ISC007N04NM6** 

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**1�����Maximum�ratings** at� _T_ A=25�°C,�unless�otherwise�specified 

## **Table�2�����Maximum�ratings** 

|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current1)|_I_D|-<br>-<br>-<br>-|-<br>-<br>-<br>-|381<br>269<br>48<br>-|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_C=100°C<br>_V_GS=10V,_T_A=25°C,<br>_R_THJA=50°C/W2)|
|Pulsed drain current3)|_ID,pulse_|-|-|1524|A|_T_A=25°C|
|Avalanche energy, single pulse4)|_E_AS|-|-|674|mJ|_I_D=50A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-<br>-|-<br>-|188<br>3.0|W|_T_C=25°C<br>_T_A=25°C,_R_THJA=50°C/W2)|
|Operating and storage temperature|_T_j,_T_stg|-55|-|175|°C|IEC climatic category; DIN IEC 68-1:<br>55/175/56|



## **2�����Thermal�characteristics** 

## **Table�3�����Thermal�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance, junction - case,<br>bottom|_R_thJC|-|-|0.8|°C/W|-|
|Thermal resistance, junction - case,<br>top|_R_thJC|-|-|20|°C/W|-|
|Device on PCB,<br>6 cm² cooling area|_R_thJA|-|-|50|°C/W|-|



> 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 

> 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 

> 3) See Diagram 3 for more detailed information 

> 4) See Diagram 13 for more detailed information 

Final Data Sheet 

3 

Rev.�2.0,��2020-11-02 

**OptiMOS[TM�] 6�Power-Transistor,�40�V ISC007N04NM6** 

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## **3�����Electrical�characteristics** 

at� _T_ j=25�°C,�unless�otherwise�specified 

## **Table�4�����Static�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|40|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|1.8|2.3|2.8|V|_V_DS=_V_GS,_I_D=1050µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|1<br>100|µA|_V_DS=40V,_V_GS=0V,_T_j=25°C<br>_V_DS=40V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|0.6<br>0.7|0.7<br>1.0|mΩ|_V_GS=10V,_I_D=50A<br>_V_GS=6V,_I_D=50A|
|Gate resistance|_R_G|-|1.0|-|Ω|-|
|Transconductance|_g_fs|-|310|-|S||_V_DS|≥2|_I_D|_R_DS(on)max,_I_D=50A|



## **Table�5�����Dynamic�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance1)|_C_iss|-|6500|8400|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz|
|Output capacitance1)|_C_oss|-|2100|2700|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz|
|Reverse transfer capacitance1)|Crss|-|40|70|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|11.7|-|ns|_V_DD=20V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=1.6Ω|
|Rise time|_t_r|-|5.2|-|ns|_V_DD=20V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=1.6Ω|
|Turn-off delay time|_t_d(off)|-|34.4|-|ns|_V_DD=20V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=1.6Ω|
|Fall time|_t_f|-|8.5|-|ns|_V_DD=20V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=1.6Ω|



## **Table�6�����Gate�charge�characteristics[2)]** 

|**Table6Gatechargecharacte**|**ristics2)**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|22|-|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Gate charge at threshold|_Q_g(th)|-|13|-|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Gate to drain charge1)|_Q_gd|-|13|19|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Switchingcharge|_Q_sw|-|21|-|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Gate charge total1)|_Q_g|-|94|117|nC|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|3.3|-|V|_V_DD=20V,_I_D=50A,_V_GS=0to10V|
|Gate charge total, sync. FET|_Q_g(sync)|-|89|-|nC|_V_DS=0.1V,_V_GS=0to10V|
|Output charge1)|_Q_oss|-|103|137|nC|_V_DD=20V,_V_GS=0V|



> 1) Defined by design. Not subject to production test. 

> 2) See ″ Gate charge waveforms ″ for parameter definition Final Data Sheet 

Rev.�2.0,��2020-11-02 

4 

**OptiMOS[TM�] 6�Power-Transistor,�40�V ISC007N04NM6** 

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## **Table�7�����Reverse�diode** 

|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|188|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|1524|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|0.79|1|V|_V_GS=0V,_I_F=50A,_T_j=25°C|
|Reverse recoverytime1)|_t_rr|-|26.7|53.4|ns|_V_R=20V,_I_F=50A,d_i_F/d_t_=1000A/µs|
|Reverse recoverycharge1)|_Q_rr|-|182.2|364.4|nC|_V_R=20V,_I_F=50A,d_i_F/d_t_=1000A/µs|



1) Defined by design. Not subject to production test. Final Data Sheet 

Rev.�2.0,��2020-11-02 

5 

## **OptiMOS**[40][ V] ™[6][ Power-Transistor,] **ISC007N04NM6** 

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Final Data Sheet 

6 

**OptiMOS ISC007N04NM6** 

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Final Data Sheet 

7 

**OptiMOS ISC007N04NM6** 

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Final Data Sheet 

8 

**OptiMOS ISC007N04NM6** 

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Diagram Gate charge waveforms<br>**----- End of picture text -----**<br>


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Final Data Sheet 

9 

**OptiMOS[TM�] 6�Power-Transistor,�40�V ISC007N04NM6** 

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## **5�����Package�Outlines** 

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|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||Z8B000193699|||||||||||
||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||**REVISION**|||||||||||
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||04|||||||||||
||||**DIMENSION**|||||||||||||||||||||||**MILLIMETERS**<br>**MIN.**<br>**MAX.**|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||**10:1**<br>**SCALE**||||||||||||
|||||||||**A**<br>**A1**||||||||||||||||||0.90<br>0.15|||||||||||||||||||1.20<br>0.35||||||||||||||||||||||||||||||||||||||0|||1<br>2|||||||3mm||||
|||||||||**b**<br>**D**||||||||||||||||||0.26<br>4.80|||||||||||||||||||0.54<br>5.35||||||||||||||||||||||||||||||||||||||||||||||||||||
||||||||**D1**<br>**D2**<br>**E**|||||||||||||||||||0.00<br>3.70<br>5.70|||||||||||||||||||0.23<br>4.40<br>6.10||||||||||||||||||||||||||||||||||||||**EUROPEAN PROJECTION**||||||||||||||
|||||||||**E1**||||||||||||||||||5.90|||||||||||||||||||6.42||||||||||||||||||||||||||||||||||||||||||||||||||||
|||||||||**E2**||||||||||||||||||3.88|||||||||||||||||||4.42||||||||||||||||||||||||||||||||||||||||||||||||||||
||||||||||**e**||||||||||||||||||||||||||||1.27||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|||||||||**L**<br>**M**||||||||||||||||||0.69<br>0.45|||||||||||||||||||0.90<br>0.69|||||||||||||||||||||||||||||||||||||||||**ISSUE DATE**<br>05.11.2019|||||||||||
||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||



## **Figure�1�����Outline�PG-TDSON-8�FL,�dimensions�in�mm** 

Final Data Sheet 

10 

Rev.�2.0,��2020-11-02 

**OptiMOS[TM�] 6�Power-Transistor,�40�V ISC007N04NM6** 

**==> picture [120 x 53] intentionally omitted <==**

## PG-TDSON-8­FL: Recommended Boardpads & Apertures 

**==> picture [478 x 270] intentionally omitted <==**

## Figure 2     Outline Boardpads (TDSON-8 FL) 

Final Data Sheet 

11 

Rev.�2.0,��2020-11-02 

OptiMOS[TM ] 6 Power-Transistor , 40 V ISC007N04NM6 

**==> picture [120 x 53] intentionally omitted <==**

## Revision History 

## ISC007N04NM6 

## Revision: 2020-11-02, Rev. 2.0 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2020-11-02|Release of final version|



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## Published by 

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## Legal Disclaimer 

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In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

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## Information 

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). 

## Warnings 

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. 

The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 

Rev. 2.0,  2020-11-02 

Final Data Sheet 

12 



## Links

- [View this product on Novapart](https://novapart.co/products/ISC007N04NM6ATMA1/power-mosfet-n-channel-40-v-381-a-7000-ohm-tdson)
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---

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