# Motor Driver/Controller, Three Phase AC, 7.4V to 9.8V, 500V/1A/3 Outputs, PQFN-38

![Product image](https://novapart.co/image/farnell:2781309/)

**URL**: https://novapart.co/products/IRSM836-015MA/motor-driver-controller-three-phase-ac-74v-to-98v
**SKU**: IRSM836-015MA
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || Intelligent Power Modules
**Price**: €3.3700
**Stock**: 10+
**Lead Time**: 190 days (indicative)

## Description

Motor Type:Three Phase AC; No. of Outputs:3Outputs; Output Current:1A; Output Voltage:500V; Driver Case Style:PQFN; No. of Pins:38Pins; Supply Voltage Min:7.4V; Supply Voltage Max:9.8V

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Ipm Series | CIPOS Nano |
| Product Range | CIPOS Nano |
| Ipm Case Style | PQFN |
| Ipm Power Device | MOSFET |
| Isolation Voltage | 1.5kV |
| Current Rating (Ic / Id) | 1A |
| Voltage Rating (Vces / Vdss) | 500V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2781309/)

**IRSM836-015MA** ~~|~~ 

## ~~IsaR~~ 

## _**1A, 500V**_ **Integrated Power Module for Small Appliance Motor Drive Applications** 

## **Description** 

IRSM836-015MA is a 1A, 500V Integrated Power Module (IPM) designed for advanced appliance motor drive applications such as energy efficient fans and pumps. IR's technology offers an extremely compact, high performance AC motor-driver in an isolated package. This advanced IPM offers a combination of IR's low RDS(on) Trench MOSFET technology and the industry benchmark 3-phase high voltage, rugged driver in a small PQFN package. At only 12x12mm and featuring integrated bootstrap functionality, the compact footprint of this surfacemount package makes it suitable for applications that are space-constrained. Integrated over-current protection, fault reporting and under-voltage lockout functions deliver a high level of protection and fail-safe operation. IRSM836-015MA functions without a heat sink. 

## **Features** 

- Integrated gate drivers and bootstrap functionality 

- Open-source for leg-shunt current sensing 

- Protection shutdown pin 

- Low RDS(on) Trench FREDFET 

- Under-voltage lockout for all channels 

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IRSM836-015MA<br>**----- End of picture text -----**<br>


- Matched propagation delay for all channels 

- Optimized dV/dt for loss and EMI trade offs 

- 3.3V Schmitt-triggered active high input logic 

- Cross-conduction prevention logic 

- Motor power range up to ~40W, without heat sink 

- Isolation 1500VRMS min 

|**Base Part Number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Orderable Part Number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|IRSM836-015MA|36L<br>PQFN 12 x 12 mm|Tape and Reel|2000|IRSM836-015MATR|
|||Tray|800|IRSM836-015MA|



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## ~~IéaR~~ 

## **Internal Electrical Schematic** 

VB1 VB2 VB3 

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IRSM836-015MA<br>V+<br>VCC<br>HIN1 t tgd od<br>HIN2<br>U, VS1<br>HIN3 : 600V $ + _<br>LIN1 3-Phase V, VS2<br>LIN2 Driver W, VS3<br>: ee ee !<br>LIN3 HVIC<br>FAULT<br>ITRIP<br>EN<br>RCIN<br>= COM = =<br>VRU VRV VRW<br>VSS<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

Absolute maximum ratings indicate sustained limits beyond which damage to the module may occur. These are not tested at manufacturing.  All voltage parameters are absolute voltages referenced to VSS unless otherwise stated in the table. 

|**Symbol**<br>~~a~~|**Description**<br>~~eG~~|**Min**<br>~~eG~~|**Max**<br>~~eG~~|**Unit**<br>~~eG~~|
|---|---|---|---|---|
|BVDSS<br>~~a ~~<br>~~a~~|MOSFET Blocking Voltage<br> ~~eG~~<br>~~eC~~|---<br>~~eG~~<br>~~eC~~|500<br>~~eG~~<br>~~eC~~|V<br>~~eG~~<br>~~eC~~|
|IO@ T=25°C<br>~~a ~~|DC Output Current per MOSFET<br> ~~eC~~|---<br>~~eC~~|1<br>~~eC~~|A<br>~~eC~~<br>~~rf~~|
|IOP<br>~~oo~~<br>~~rs~~|Pulsed Output Current (Note 1)<br>~~oo~~<br>~~rf~~|---<br>~~rf~~|7<br>~~rf~~||
|Pd@ TC=25°C<br>~~oo~~<br>~~rs~~<br>~~ee~~|Maximum Power Dissipation per MOSFET<br>~~oo~~<br>~~rf~~<br>~~GO~~|---<br>~~rf~~<br>~~GO~~|11<br>~~rf~~<br>~~GO~~|W<br>~~rf~~<br>~~GO~~|
|VISO<br>~~rs~~<br>~~ee~~<br>~~rs~~|Isolation Voltage (1min) (Note 2)<br>~~rf~~<br>~~GO~~<br>~~rf~~|---<br>~~rf~~<br>~~GO~~<br>~~rf~~|1500<br>~~rf~~<br>~~GO~~<br>~~rf~~|VRMS<br>~~rf~~<br>~~GO~~<br>~~rf~~|
|TJ<br>~~ee~~<br>~~rs~~<br>~~ee~~|Operating Junction Temperature<br>~~GO~~<br>~~rf~~|-40<br>~~GO~~<br>~~rf~~|150<br>~~GO~~<br>~~rf~~|°C<br>~~GO~~<br>~~rf~~|
|TL<br>~~rs~~<br>~~ee~~<br>~~ee~~|Lead Temperature (Soldering, 30 seconds)<br>~~rf~~<br>~~GO~~|---<br>~~rf~~<br>~~GO~~|260<br>~~rf~~<br>~~GO~~|°C<br>~~rf~~<br>~~GO~~|
|TS<br>~~ee~~<br>~~ee~~<br>~~rs~~|Storage Temperature<br>~~GO~~<br>~~rf~~|-40<br>~~GO~~<br>~~rf~~|150<br>~~GO~~<br>~~rf~~|°C<br>~~GO~~<br>~~rf~~|
|VS1,2,3<br>~~ee~~<br>~~rs~~<br>~~ee~~|High Side Floating Supply Offset Voltage<br>~~GO~~<br>~~rf~~<br>~~GO~~|VB1,2,3- 20<br>~~GO~~<br>~~rf~~<br>~~GO~~|VB1,2,3+0.3<br>~~GO~~<br>~~rf~~<br>~~GO~~|V<br>~~GO~~<br>~~rf~~<br>~~GO~~|
|VB1,2,3<br>~~rs~~<br>~~ee~~<br>~~rs~~|High Side Floating Supply Voltage<br>~~rf~~<br>~~GO~~<br>~~rf~~|-0.3<br>~~rf~~<br>~~GO~~<br>~~rf~~|500<br>~~rf~~<br>~~GO~~<br>~~rf~~|V<br>~~rf~~<br>~~GO~~<br>~~rf~~|
|VCC<br>~~ee~~<br>~~rs~~<br>~~ee~~|Low Side and Logic Supply voltage<br>~~GO~~<br>~~rf~~<br>~~ef~~|-0.3<br>~~GO~~<br>~~rf~~<br>~~ef~~|20<br>~~GO~~<br>~~rf~~<br>~~ef~~|V<br>~~GO~~<br>~~rf~~<br>~~ef~~|
|VIN<br>~~rs~~<br>~~ee~~|Input Voltage of LIN, HIN, ITRIP, EN, RCIN, FLT<br>~~rf~~<br>~~ef~~|VSS-0.3<br>~~rf~~<br>~~ef~~|VCC+0.3<br>~~rf~~<br>~~ef~~|V<br>~~rf~~<br>~~ef~~|



Note 2: Characterized, not tested at manufacturing 

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**Recommended Operating Conditions** 

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||||||
|---|---|---|---|---|
|Symbol|Description|Min|Max|Unit|
|V+|Positive DC Bus Input Voltage|---|400|V|
|VS1,2,3|High Side Floating Supply Offset Voltage|(Note 3)|400|V|
|VB1,2,3|High Side Floating Supply Voltage|VS+10|VS+20|V|
|VCC|Low Side and Logic Supply Voltage|11.5|18.5|V|
|VIN|Input Voltage of LIN, HIN, ITRIP, EN, FLT|0|5|V|
|Fp|PWM Carrier Frequency|---|20|kHz|

**----- End of picture text -----**<br>


The Input/Output logic diagram is shown in Figure 1. For proper operation the module should be used within the recommended conditions. All voltages are absolute referenced to COM. The VS offset is tested with all supplies biased at 15V differential. 

Note 3: Logic operational for Vs from COM-5V to COM+250V. Logic state held for Vs from COM-5V to COM-VBS. 

## **Static Electrical Characteristics** 

(VCC-COM) = (VB-VS) = 15 V.  TA = 25[o] C unless otherwise specified. The VIN and IIN parameters are referenced to VSS and are applicable to all six channels. The VCCUV parameters are referenced to VSS. The VBSUV parameters are referenced to VS. 

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||||||||||
|---|---|---|---|---|---|---|---|---|
|a|Symbol|a|Description|Min|Typ|Max|Units|Conditions|
|a|BVDSS|Drain-to-Source Breakdown Voltage|500|---|---|V|TJ=25°C, ILK=250µA|
|Leakage Current of High Side FET’s in|
|ILKH|1|µA|TJ=25°C, VDS=500V|
|Parallel|
|eeee|ee|ee|
|Leakage Current of Low Side FET’s in|
|ILKL|4|µA|TJ=25°C, VDS=500V|
|Parallel Plus Gate Drive IC|
|eo|
|a|RDS(ON)|Drain to Source ON Resistance|---|4.8|6|Ω|TJ=25°C, VCC=15V, Id = 0.5A|
|a|VIN,th+|Positive Going Input Threshold|2.5|---|---|V|
|a|VIN,th-|Negative Going Input Threshold|---|---|0.8|V|
|VCCUV+,|VCC and VBS Supply Under-Voltage,|
|8|8.9|9.8|V|
|VBSUV+|Positive Going Threshold|
|ee|VCCUV-,|VCC and VBS supply Under-Voltage,|ee|ee|eee|
|7.4|8.2|9|V|
|VBSUV-|Negative Going Threshold|
|eeee|ee|
|VCCUVH,|VCC and VBS Supply Under-Voltage|
|---|0.7|---|V|
|VBSUVH|Lock-Out Hysteresis|
|po|
|a|IQBS|Quiescent VBS Supply Current VIN=0V|---|---|125|µA|
|a|IQCC|Quiescent VCC Supply Current VIN=0V|---|---|3.5|mA|
|a|IQCC, ON|Quiescent VCC Supply Current VIN=4V|---|---|10|mA|
|a|IIN+|Input Bias Current VIN=4V|---|130|160|µA|
|a|IIN-|Input Bias Current VIN=0V|---|--|1|µA|
|a|ITRIP+|ITRIP Bias Current VITRIP=4V|---|4|40|µA|
|a|ITRIP-|ITRIP Bias Current VITRIP=0V|---|--|1|µA|
|a|VIT, TH+|ITRIP Threshold Voltage|0.37|0.46|0.55|V|
|a|VIT, TH-|ITRIP|a|Threshold Voltage|---|0.4|---|V|

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## **IRSM836-015MA** ~~a~~ 

|VIT, HYS|ITRIPInput Hysteresis|---|0.06|---|V||
|---|---|---|---|---|---|---|
|RBR|Internal Bootstrap Equivalent Resistor<br>Value|---|200|---|Ω|TJ=25°C|
|VRCIN,TH|RCIN Positive Going Threshold|---|8|---|V||
|RON,FLT|FLT Open-Drain Resistance|---|50|100|Ω||



## **Dynamic Electrical Characteristics** 

(VCC-COM) = (VB-VS) = 15 V.  TA = 25[o] C unless otherwise specified. 

~~a~~ **Symbol Description Min Typ Max Units Conditions** Input to Output Propagation Turn-On TON --1 1.5 µs ~~pp~~ Delay Time ID=1mA, V[+] =50V See Fig.2 Input to Output Propagation Turn-Off TOFF --1 1.5 µs Delay Time ~~eea~~ TFIL,IN Input Filter Time (HIN, LIN) ~~ee~~ 200 360 --ns VIN=0 & VIN=4V TFIL,EN Input Filter Time (EN) 100 200 --ns VIN=0 & VIN=4V ~~es~~ TBLT-ITRIP ITRIP Blanking Time 100 330 ns VIN=0 & VIN=4V, VI/Trip=5V TFLT Itrip to FLT ~~oe~~ --590 ~~ee~~ 950 ~~oe~~ ns VIN=0 & VIN=4V ~~es~~ TEN EN Falling to Switch Turn-Off ~~oe~~ 750 ~~ee~~ 950 ~~ee~~ ns VIN=0 & VIN=4V TITRIP ITRIP to Switch Turn-Off Propagation Delay --1000 1200 ns ID=1A, V[+] =50V, See Figure 3 ~~eeee~~ **MOSFET Avalanche Characteristics** 

**Symbol Description Min Typ Max Units Conditions** 49 ~~a~~ EAS Single Pulse Avalanche Energy ----Note 4 mJ See Note 4 Note 4: From characterization of TO-220 packaged devices. Starting TJ=25°C, L=27mH, VDD=100V, IAS=1.7A VGS=10V **Thermal and Mechanical Characteristics** 

|**Symbol**|**Description**|**Min**|**Typ**|**Max**|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|Rth(J-CT)|Total Thermal Resistance Junction to<br>Case Top|---|28.9|---|°C/W|One device|
|Rth(J-CB)|Total Thermal Resistance Junction to<br>Case Bottom|---|3.8|---|°C/W|One device|



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## **Qualification Information** † 

|**Qualification Information**†|**Qualification Information**†||
|---|---|---|
|**Qualification Level**||Industrial<br>††<br>(per JEDEC JESD 47E)|
|**Moisture Sensitivity Level**||MSL3†††<br>(per IPC/JEDEC J-STD-020C)|
|**ESD**|**Machine Model**|Class B<br>(per JEDEC standard JESD22-A115)|
||**Human Body Model**|Class 2<br>(per standard ESDA/JEDEC JS-001-2012)|
|**RoHS Compliant**||Yes|



† Qualification standards can be found at International Rectifier’s web site http://www.irf.com/ 

- †† Higher qualification ratings may be available should the user have such requirements.  Please contact your International Rectifier sales representative for further information. 

††† Higher MSL ratings may be available for the specific package types listed here.  Please contact your International Rectifier sales representative for further information. 

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**IRSM836-015MA** ~~a~~ 

## **Input/Output Pin Equivalent Circuit Diagrams** 

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VB<br>ESD<br>Diode<br>20 V<br>Clamp HO<br>ESD<br>Diode<br>V CC<br>VS<br>ESD<br>HIN, Diode 20 V 600 V  VCC<br>LIN, Clamp<br>or EN<br>ESD<br>Diode 33k ESD<br>Diode<br>VSS Clamp25 V  LO<br>ESD<br>Diode<br>COM<br>VCC VCC<br>ESD ESD<br>Diode Diode<br>RCIN or<br>ITRIP<br>FAULT<br>ESD ESD<br>Diode 1M Diode<br>VSS VSS<br>**----- End of picture text -----**<br>


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## **Input-Output Logic Level Table** 

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| Ho |<br>Hin1,2,3 | [|]<br>Gate |<br>l Driver U, V, W<br>| IC |<br>l<br>Lo<br>Lin1,2,3<br>**----- End of picture text -----**<br>


|**EN**|**Itrip**|**Hin1,2,3**|**Lin1,2,3**|**U,V,W**|
|---|---|---|---|---|
|1|0|1|0|V+|
|1|0|0|1|0|
|1|0|0|0|off|
|1|1|X|X|off|
|0|X|X|X|off|



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HIN1,2,3<br>LIN1,2,3<br>ITRIP<br>U,V,W<br>**----- End of picture text -----**<br>


**Figure 1:** Input/Output Logic Diagram 

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V I<br>DS D<br>50%<br>HIN /LIN 90% ID 50%<br>VDS<br>HIN/LIN<br>10% ID<br>tr<br>TON<br>**----- End of picture text -----**<br>


**Figure 2a:** Input to Output propagation turn-on delay time. 

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I V<br>D DS<br>90% ID<br>50% HIN/LIN<br>HIN /LIN<br>50%<br>VCE<br>10% ID<br>tf<br>TOFF<br>Figure 2b:  Input to Output propagation turn-off<br>delay time.<br>**----- End of picture text -----**<br>


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IF<br>VDS<br>HIN/LIN<br>Irr<br>VA<br>trr<br>**----- End of picture text -----**<br>


**Figure 2c:** Diode Reverse Recovery. 

**Figure 2:** Switching Parameter Definitions 

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HIN1,2,3<br>LIN1,2,3<br>50% 50%<br>ITRIP<br>Cy<br>U,V,W 50% Y s cecsrerececereciceeechcseeeeaa ’ 50%<br>Cererecerechterscererecire’,<br>VL/<br> TITRIP  TFLT-CLR<br>**----- End of picture text -----**<br>


**Figure 3:** ITRIP Timing Waveform 

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## **IRSM836-015MA** ~~a~~ 

## **Module Pin-Out Description** 

|||**Pin**<br>~~a~~|**Pin**<br>~~a~~||||**Name**|**Name**||**Description**|
|---|---|---|---|---|---|---|---|---|---|---|
|||1<br>~~a~~|||||HIN3|||Logic Input for High Side Gate Driver - Phase 3|
|||2<br>~~a~~|||||LIN1|||Logic Input for Low Side Gate Driver - Phase 1|
|||3<br>~~a~~|||||LIN2|||Logic Input for Low Side Gate Driver - Phase 2|
|||4<br>~~a~~|||||LIN3|||Logic Input for Low Side Gate Driver - Phase 3|
|||5<br>~~a~~|||||/FLT|||Fault Output Pin|
|||6<br>~~a~~|||||Itrip|||Over-Current Protection Pin|
|||7<br>~~a~~|||||EN|EN||Enable Pin|
|||8<br>~~a~~|||||RCin|||Reset Programming Pin|
|||9, 39<br>~~a~~|||||VSS, COM<br>Ground for Gate Drive IC and Low Side Gate Drive Return||||
|||10, 11,<br>30, 37<br>U, VS1<br>Output 1, High Side Floating Supply Offset Voltage<br>~~aee~~|||||||||
|||12, 13<br>~~a~~|||||VR1|||Phase 1 Low Side FET Source|
|||14, 15<br>~~a~~|||||VR2|||Phase 2 Low Side FET Source|
|||16, 17, 38<br>~~a~~||16, 17, 38|||V, VS2|||Output 2, High Side Floating Supply Offset Voltage|
|||18, 19<br>~~a~~|||||W, VS3||W, VS3|Output 3, High Side Floating Supply Offset Voltage|
|||20, 21<br>~~a~~|||||VR3|||Phase 3 Low Side FET Source|
|||22-29<br>~~a~~|||||V+|||DC Bus Voltage Positive|
|||31<br>~~a~~|||||VB1|||High Side Floating Supply Voltage 1|
|||32<br>~~a~~|||||VB2|||High Side Floating Supply Voltage 2|
|||33<br>~~a~~|||||VB3|||High Side Floating Supply Voltage 3|
|||34<br>~~a~~|||||VCC|||15V Supply|
|||35<br>~~a~~|||||HIN1|||Logic Input for High Side Gate Driver - Phase 1|
|||36<br>~~a~~|||||HIN2|||Logic Input for High Side Gate Driver - Phase 2b|
|||25<br>24<br>26|||||23|22||21<br>20|
||||||||||||
|27|||||||||||
|28||Top View|Top View|||||||19<br>**Note**<br>Pads 37 and 38 can be omitted|
|29||||||||||from the PCB footprint and hence|
|||||||||||18<br>do not need to be soldered|
|32<br>31<br>30||37|||||38|||17<br>16<br>All pins with the same name are<br>internally connected. For example,<br>pins 10, 11, 30 and 37 are<br>internally connected.|
|33||39||||||||15|
|36<br>35<br>34||||||||||12<br>13<br>14|
|||1<br>5<br>4<br>3<br>2|6||7||9<br>8||11<br>10||



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**IRSM836-015MA** ~~|~~ 

## ~~Té4R~~ 

## **Fault Reporting and Programmable Fault Clear Timer** 

The IRSM836-015MA provides an integrated fault reporting output and an adjustable fault clear timer. There are two situations that would cause the IRSM836-015MA to report a fault via the **FLT** pin. The first is an under-voltage condition of **VCC** and the second is when the **ITRIP** pin recognizes a fault. 

The fault clear timer provides a means of automatically re-enabling the module operation a preset amount of time after the fault condition has disappeared. When a fault condition occurs, the fault diagnostic output ( **FLT** ) stays in the low state until the fault condition has been removed and the fault clear timer expires; once the fault clear timer expires, the voltage on the **FLT** pin will return to the logic-high voltage. Figure 4a is a block-level diagram that focuses on the fault diagnostic and fault clear timer functionality of the driver chip within the module. The fault clear timer is defined with a simple resistor-capacitor (RC) network on the **RCin** pin, as shown in Figure 4b. 

Figure 5 is a timing diagram showing the states of the **FLT** and **RCin** pins during both normal operation and under a fault condition. Under normal operation, both **FLT** and **RCin** are in high impedance (open drain) states. CRCIN is fully-charged, and **FLT** is pulled up high. When a fault condition occurs, **RCin** and **FLT** are pulled low to **VSS** – CRCIN is discharged; once the fault condition has been removed, **RCin** returns to a high impedance state and the fault clear timer begins – that is, CRCIN starts charging via RRCIN. tFLTCLR seconds later – when the **RCin** voltage crosses a datasheet-defined threshold of VRCIN,TH, **FLT** returns to a high impedance state and the module is operational again. tFLTCLR is determined by a simple RC network, shown in Figure 6 - RRCIN and CRCIN determine how long the voltage at the **RCin** pin takes to reach the VRCIN,TH fixed threshold. 

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V cc<br>HIN  (x3)<br>VB ( x3)<br>LIN  (x3)<br>Fier IRSM836-015MA<br>pee] ee EN<br>FAULT VS (x3)<br>R RCIN<br>eG an a RCIN oo<br>ITRIP<br>CRCIN<br>VSS VRx<br>- let “ li t —_<br>4Se .<br>zs at [A<br>I -<br>Figure 4a:  Block diagram showing internal  Figure 4b:  Programming the fault clear timer<br>functioning of fault diagnostic and fault clear timer<br>**----- End of picture text -----**<br>


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ITRIP<br>**----- End of picture text -----**<br>


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VRCIN tFLTCLR<br>VCC<br>VRCIN,TH<br>Time<br>VSS<br>a,<br>VFAULT<br>High<br>Impedance State<br>Time<br>VSS<br>Figure 5:  RCIN and FLT pin waveforms<br>**----- End of picture text -----**<br>


The design guidelines for this network are shown in Table 1. CRCIN needs to be small enough so that the discharge of the capacitor occurs before the fault condition disappears. If the fault condition disappears before the CRCIN capacitor is sufficiently discharged, the module will be stuck in fault mode. To achieve sufficiently high fault clear time, it is thus recommend RRCIN be increased while CRCIN be kept small. 

|CRCIN|≤1 nF|
|---|---|
||Ceramic|
|RRCIN|0.5 MΩ to 2 MΩ|
||>> RON,RCIN|



**Table 1:** Design guidelines 

The length of the fault clear time period can be determined by using the formula below. 

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If the fault clear timer functionality is not needed, it is sufficient to pull the **RCin** pin up to **VCC** with RRCIN ≥ 10kΩ. In this case, CRCIN is not needed. 

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**IRSM836-015MA** ~~|~~ 

## **Typical Application Connection IRSM836-015MA** 

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VB2<br>VB1 VB3 IRSM836-015MA<br>VBUS<br>2M<br>VCC HVIC<br>XTAL0 PWMUH HIN1<br>SPD-REF XTAL1AIN2 PWMWHPWMWLPWMVHPWMULPWMVL HIN2HIN3LIN1LIN2LIN3 W, VS3U, VS1V, VS2<br>GATEKILL FAULT<br>IRMCK171 ITRIP<br>SupplyPower VDDCAPVDDVSS IFBOAIN1IFB+IFB- 7.68k 6.04k6.04k 2M1nF RCINENVSS COM<br>4.87k<br>Wea:<br>0.5<br>1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce<br>ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins<br>will further improve performance.<br>**----- End of picture text -----**<br>


2. In order to provide good decoupling between VCC-VSS and VB1,2,3-VS1,2,3 terminals, the capacitors shown connected between these terminals should be located very close to the module pins. Additional high frequency capacitors, typically 0.1µF, are recommended. 

3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made based on application note AN-1044. 

4. PWM generator must be disabled within Fault duration to guarantee shutdown of the system. Overcurrent condition must be cleared before resuming operation. 

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**IRSM836-015MA** 

## **Current Capability in a Typical Application** 

Figure 6 shows the current capability for this module at specified conditions. The current capability of the module is affected by application conditions including the PCB layout, ambient temperature, maximum PCB temperature, modulation scheme, PCB copper thickness and so on. The curves below were obtained from measurements carried out on the IRMCS1471_R4 reference design board which includes the IRSM836-015MA and IR’s IRMCK171 digital control IC. 

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320V, ∆Tca = 70<br>350<br>300<br>isis gl<br>250<br>TTTee<br>200<br>150<br>100<br>== 015MA, 3P<br>50<br>—o— 015MA, 2P<br>0<br>6 8 10 12 14 16 18 20<br>Carrier Frequency (kHz)<br>RMS Current (mA)<br>**----- End of picture text -----**<br>


**Figure 6:** Maximum Sinusoidal Phase Current vs. PWM Switching Frequency Sinusoidal Modulation, V[+] =320V, PF=0.98 

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**IRSM836-015MA** ~~|~~ 

## **PCB Example** 

Figure 7 below shows an example layout for the application PCB. The effective area of the V+ top-layer copper plane is ~3cm² in this example. For an FR4 PCB with 1oz copper, Rth(J-A) is about 40°C/W. A lower Rth(J-A) can be achieved using thicker copper and/or additional layers. 

**Figure 7:** PCB layout example and corresponding thermal image (10kHz, 3P, 1oz, ∆Tca=70°C, V+ = 320V, Iu = 295mArms) 

At the module’s typical operating conditions, dV/dt of the phase node voltage is influenced by the load capacitance which includes parasitic capacitance of the PCB, MOSFET output capacitance and motor winding capacitance. To turn off the MOSFET, the load capacitance needs to be charged by the phase current. For the IRMCS1671 reference design, turn-off dV/dt ranges from 2 to 5 V/ns depending on the phase current magnitude. Turn-on dV/dt is influenced by PCB parasitic capacitance and motor winding capacitance and typically ranges from 4 to 6 V/ns. The MOSFET turn-on loss combined with the complimentary body diode reverse recovery loss comprises the majority of the total switching losses. Two-phase modulation can be used to reduce switching losses and run the module at higher phase currents. 

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**IRSM836-015MA** 

## IéaRwy| 

## **36L Package Outline IRSM836-015MA (Bottom View)** 

Dimensions in mm 

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## IéaRypwD| N 

## **36L Package Outline IRSM836-015MA (Bottom View)** 

Dimensions in mm 

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**IRSM836-015MA** 

## **36L Package Outline IRSM836-015MA (Top and Side View)** 

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**IRSM836-015MA** ~~|~~ 

## ~~1éaR~~ 

## **Top Marking** 

- 1.1 Site Code (H or C) 

- 1.2 Last 4 characters of the production order prior to “.n” (n = 1 or 2 digit split indicator) 1.3 Lead Free Released: P Lead Free Samples: W Engineering / DOE: Y 

- 1.4 Date Code: YWW (Y = last digit of the production calendar year. WW is week number in the calendar year) 

- 1.5 Part Number: IRSM836-015MA 

- 1.6 IR Logo 

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**IRSM836-015MA** ~~|~~ 

## **Revision History** 

March 2015 Increased the recommended range for VCC and VB1,2,3; improved readability. 

Data and Specifications are subject to change without notice **IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information 

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## Links

- [View this product on Novapart](https://novapart.co/products/IRSM836-015MA/motor-driver-controller-three-phase-ac-74v-to-98v)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irsm836-015ma/ipm-module-mosfet-500v-1a-pqfn/dp/2781309)
---

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