# Motor Driver/Controller, Half Bridge, 7.4V to 9.8V, 500V/10A/1 Output, PQFN-32

![Product image](https://novapart.co/image/farnell:2781307/)

**URL**: https://novapart.co/products/IRSM808-105MH/motor-driver-controller-half-bridge-74v-to-98v
**SKU**: IRSM808-105MH
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || Intelligent Power Modules
**Price**: €2.3500
**Stock**: 1000+
**Lead Time**: 197 days (indicative)

## Description

Motor Type:Half Bridge; No. of Outputs:1Outputs; Output Current:10A; Output Voltage:500V; Driver Case Style:PQFN; No. of Pins:32Pins; Supply Voltage Min:7.4V; Supply Voltage Max:9.8V;

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Ipm Series | CIPOS Nano |
| Product Range | CIPOS Nano |
| Ipm Case Style | PQFN |
| Ipm Power Device | MOSFET |
| Isolation Voltage | 1.5kV |
| Current Rating (Ic / Id) | 10A |
| Voltage Rating (Vces / Vdss) | 500V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2781307/)

**IRSM808-105MH** ~~|~~ 

## **Half-Bridge IPM for Small Appliance Motor Drive Applications** 

## wiPM™ 

## 10A, 500V 

## **Description** 

IRSM808-105MH is a 10A, 500V half-bridge module designed for advanced appliance motor drive applications such as energy efficient fans and pumps. IR's technology offers an extremely compact, high performance half-bridge topology in an isolated package. This advanced IPM offers a combination of IR's low RDS(on) Trench FREDFET technology and the industry benchmark half-bridge high voltage, rugged driver in a small PQFN package. At only 8x9mm and featuring integrated bootstrap functionality, the compact footprint of this surface-mount package makes it suitable for applications that are space-constrained. IRSM808-105MH functions without a heat sink. 

## **Features** 

- Integrated gate drivers and bootstrap functionality 

- Suitable for sinusoidal modulation applications 

- Low RDS(on) Trench FREDFET 

- Under-voltage lockout for both channels 

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- Matched propagation delay for all channels 

- Optimized dV/dt for loss and EMI trade offs 

- 3.3V input logic compatible 

- Active high HIN and active low LIN 

- Motor Power range 80-200W 

- Isolation 1500VRMS min 

- ROHS compliant 

## **Internal Electrical Schematic** 

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VB IRSM808-105MH<br>V+<br>VCC<br>HIN<br>600V Half Bridge  Vs<br>driver with built<br>LIN<br>in bootstrap<br>DT<br>V-<br>**----- End of picture text -----**<br>


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COM<br>**----- End of picture text -----**<br>


## **Ordering Information** 

|**Ordering Informationrdering Informationdering Informationring Informationg Information Informationormationrmationationiononn **||||
|---|---|---|---|
|**Orderable Part Number**|**Package Type**|**Form**|**Quantity**|
|IRSM808-105MH|PQFN 8x9mm|Tray|1300|
|IRSM808-105MHTR|PQFN 8x9mm|Tape and Reel|2000|



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## **Absolute Maximum Ratings** 

Absolute maximum ratings indicate sustained limits beyond which damage to the module may occur. These are not tested at manufacturing.  All voltage parameters are absolute voltages referenced to VSS unless otherwise stated in the table.  The thermal resistance rating is measured under board mounted and still air conditions. 

|**Symbol**<br>~~a~~<br>~~ee~~|**Description**|**Min**|**Max**|**Unit**|
|---|---|---|---|---|
|BVDSS<br>~~ee~~|MOSFET Blocking Voltage|---|500|V|
|IO<br>~~ee~~<br>~~a~~<br>~~Rs~~|Output DC Current per MOSFET @ TC=25°C|---|10|A|
|Pd<br>~~Rs~~|Power dissipation per MOSFET @ TC=100°C|---|55|W|
|TJ(MOSFET & IC)<br>~~Rs~~<br>~~a~~<br>~~ee~~|Maximum Operating Junction Temperature|---|150|°C|
|TL<br>~~ee~~|Lead temperature (soldering 30 seconds)|---|260|°C|
|TS<br>~~ee~~<br>~~a~~|Storage Temperature Range|-40|150|°C|
|VB<br>~~a~~|High side floating supply voltage|-0.3|VS + 20|V|
|VS<br>~~a~~<br>~~ee~~|High side floating supply offset voltage<br>~~ee~~|VB - 20<br>~~ee~~|VB +0.3<br>~~ee~~|V<br>~~ee~~|
|VCC<br>~~a~~<br>~~ee~~|Low Side fixed supply voltage<br>~~ee~~|-0.3<br>~~ee~~|20<br>~~ee~~|V<br>~~ee~~|
|VIN<br>~~ee~~<br>~~a~~<br>~~es~~|Logic input voltage LIN, HIN<br>~~ee~~|-0.3<br>~~ee~~|VCC+0.3<br>~~ee~~|V<br>~~ee~~|
|VISO<br>~~es~~|Isolation voltage (1min) (Note2)|---|1500|VRMS|



Note1: Calculated based on maximum junction temperature. Bond wires current limit is 3.5A. Note2: Characterized, not tested at manufacturing 

## **Recommended Operating Conditions** 

|**Symbol**<br>~~eG~~|**Description**<br>~~eG~~|**Min**<br>~~eG~~|**Typ**<br>~~eG~~|**Max**<br>~~eG~~|**Units**<br>~~eG~~|**Conditions**<br>~~eG~~|
|---|---|---|---|---|---|---|
|V+<br>~~eG~~<br>~~a~~|Positive DC Bus Input Voltage<br>~~eG~~<br>~~eG~~|---<br>~~eG~~<br>~~eG~~|---<br>~~eG~~<br>~~eG~~|400<br>~~eG~~<br>~~eG~~|V<br>~~eG~~<br>~~eG~~|~~eG~~<br>~~eG~~|
|VS1,2,3<br>~~a ~~<br>~~GG~~|High Side Floating Supply Offset Voltage<br> ~~eG~~<br>~~GG~~|(Note 3)<br>~~eG~~<br>~~GG~~|---<br>~~eG~~<br>~~GG~~|400<br>~~eG~~<br>~~GG~~|V<br>~~eG~~<br>~~GG~~|~~eG~~<br>~~GG~~|
|VB1,2,3<br>~~Ge~~|High Side Floating Supply Voltage<br>~~Ge~~|VS+12<br>~~Ge~~|---<br>~~Ge~~|VS+20<br>~~Ge~~|V<br>~~Ge~~|~~Ge~~|
|VCC<br>~~eG~~|Low Side and Logic Supply Voltage<br>~~eG~~|13.5<br>~~eG~~|---<br>~~eG~~|16.5<br>~~eG~~|V<br>~~eG~~|~~eG~~|
|VIN<br>~~GO~~|Logic Input Voltage<br>~~GO~~|COM<br>~~GO~~|---<br>~~GO~~|VCC<br>~~GO~~|V<br>~~GO~~|~~GO~~|
|Fp<br>~~GO~~<br>~~GG~~|PWM Carrier Frequency<br>~~GO~~<br>~~GG~~|---<br>~~GO~~<br>~~GG~~|---<br>~~GO~~<br>~~GG~~|20<br>~~GO~~<br>~~GG~~|kHz<br>~~GO~~<br>~~GG~~|~~GO~~<br>~~GG~~|



For proper operation the module should be used within the recommended conditions. All voltages are absolute referenced to COM. The VS offset is tested with all supplies biased at 15V differential. 

Note 3: Logic operational for Vs from COM-8V to COM+500V. Logic state held for Vs from COM-8V to COM-VBS. 

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## **Static Electrical Characteristics** 

VBIAS (VCC, VBS)=15V, TJ=25ºC, unless otherwise specified. The VIN, and IIN parameters are referenced to COM 

|~~es~~|||||||
|---|---|---|---|---|---|---|
|**Symbol**<br>~~es~~<br>~~**a**~~|**Description**<br>~~ee~~|**Min**<br>~~ee~~|**Typ**<br>~~ee ee~~|**Max**<br>~~ee~~|**Units**<br>~~ee~~|**Conditions**|
|BVDSS<br>~~es~~<br>~~**a**~~|Drain-to-Source Breakdown Voltage<br>~~ee~~|500<br>~~ee~~|---<br>~~ee ee~~|---<br>~~ee~~|V<br>~~ee~~|TJ=25°C, ILK=3mA|
|ILKH<br>~~**a**~~|Leakage Current of High Side FET’s in<br>Parallel<br>~~ee ~~|---<br> ~~ee~~|15<br>~~ee ee~~|---<br>~~ee~~|µA<br>~~ee~~|TJ=25°C, VDS=500V|
|ILKL<br>~~a~~|Leakage Current of Low Side FET’s in<br>Parallel Plus GateDriveIC<br>~~a~~|---<br>~~a~~|20<br>~~a~~|---<br>~~a~~|µA<br>~~a~~|TJ=25°C, VDS=500V<br>~~a~~|
|RDS(ON)<br>~~a~~<br>~~es~~|Drain to Source ON Resistance<br>~~a~~|---<br>~~a~~<br>~~ft~~|0.58<br>~~a~~<br>~~ftff~~|0.8<br>~~a~~<br>~~ff~~|Ω<br>~~a~~<br>~~ff~~|TJ=25°C, VCC=10V, Id = 6A<br>~~a~~<br>~~fT~~|
|||---<br>~~a~~<br>~~ft~~|1.60<br>~~a~~<br>~~ftff~~|---<br>~~a~~<br>~~ff~~||TJ=150°C, VCC=10V, Id = 6A<br>(Note4)<br>~~a~~<br>~~fT~~|
|VSD<br>~~es~~|Diode Forward Voltage|---<br>~~ft~~|0.85<br>~~ftff~~|1.0<br>~~ff~~|V<br>~~ff~~|TJ=25°C, VCC=10V, Id = 6A<br>~~fT~~|
|VHIN/LIN<br>~~es~~<br>~~a~~|Logic “1” input voltage for HIN & “0” for<br>LIN|2.2<br>~~ft~~|---<br>~~ft ff~~|---<br>~~ff~~|V<br>~~ff ~~|~~fT~~|
|VHIN/LIN<br>~~a~~<br>~~a~~|Logic “0” input voltage for HIN & “1” for<br>LIN|---|---|0.8|V||
|VCCUV+,VBSUV+<br>~~a~~|VCCand VBSSupply Under-Voltage,<br>Positive GoingThreshold<br>~~ee~~|8<br>~~ee~~|8.9|9.8|V||
|VCCUV-,VBSUV-<br>~~a~~|VCCand VBSsupply Under-Voltage,<br>Negative GoingThreshold|7.4|8.2|9.0|V||
|VCCUVH,VBSUVH<br>~~a~~<br>~~a~~<br>~~es~~|VCCand VBSSupply Under-Voltage Lock-<br>OutHysteresis|---|0.7|---|V||
|IQBS<br>~~a~~<br>~~es~~<br>~~es~~|Quiescent VBSSupply Current VIN=0V<br>|---<br>|45<br>|70<br>|µA<br>||
|IQCC<br>~~es~~<br>~~es~~<br>~~a~~|Quiescent VCCSupply Current VIN=0V<br>|---<br><br>~~ed~~|1100<br><br>~~ed~~|3000<br><br>~~ed~~|µA<br><br>~~ed~~||
|IHIN+<br>~~eses~~<br>~~a~~|Input Bias Current VIN=4V<br>~~es~~|---<br>~~es~~<br>~~ed~~|5<br>~~es~~<br>~~ed~~|20<br>~~es~~<br>~~ed~~|µA<br>~~es~~<br>~~ed~~|~~es~~|
|ILIN-<br>~~a~~|Input Bias Current VIN=0V|---<br>~~ed~~|1<br>~~ed~~|2<br>~~ed~~|µA<br>~~ed~~||
|RBR<br>~~a~~|Internal Bootstrap Equivalent Resistor<br>Value|---|200|---|Ω|TJ=25°C|



Note 4: Characterized, not tested at manufacturing 

## **MOSFET Avalanche Characteristics** 

|**Symbol**|**Description**|**Min**|**Typ**|**Max**|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|EAS|Single Pulse Avalanche Energy|---|216|---|mJ|TJ=25°C, L=3mH, VDD=100V,<br>IAS=12A, TO-220 package.|



## **Dynamic Electrical Characteristics** 

VBIAS (VCC, VBS)=15V, TJ=25ºC, unless otherwise specified. Driver only timing unless otherwise specified. 

|**Symbol**|**Description**|**Min**|**Typ**|**Max**|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|TON|Input to Output Propagation Turn-On<br>Delay Time|---|0.8|1.3|µs|ID=1mA, V+=50V|
|TOFF|Input to Output Propagation Turn-Off<br>DelayTime|---|0.8|1.3|µs|Gate Driver; VLIN=0 & VHIN=5V<br>with no external deadtime|
|DT|Built-in Deadtime|0.9|1.3|---|µs||
|TFIL,IN|Input Filter Time (HIN, LIN)|---|300|---|ns||



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**IRSM808-105MH** ~~Té4zR a~~ **Thermal and Mechanical Characteristics Symbol Description Min Typ Max Units Conditions** Thermal resistance, junction to Standard reflow-solder Rth(J-B) mounting pad, each MOSFET --0.9 --°C/W process Thermal resistance, junction to Mounted on 13.2cm2 of ~~a~~ Rth(J-A) ambient, each MOSFET --40 --°C/W two-layer FR4 with 36 vias **Input-Output Logic Level Table** V+ Ho HIN Gate Driver U/V/W IC Lo LIN ~~zn~~ HIN LIN U,V,W HI HI V+ LO LO 0 HI LO ** LO HI * ~~===~~ 

- V+ if motor current is flowing into VS, 0 if current is flowing out of VS into the motor winding ** Anti Shoot-through protection active (both HO and LO are OFF) 

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Figure 1 – MOS typical output characteristics at 25°C 

Figure 2 – MOS typical output characteristics at 25°C 

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Is4R|v) 

Figure 3 – MOS body diode typical characteristics at 25°C and 150°C 

Figure 4 – module top surface typical thermal impedance 

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Figure 5 – Typical switching losses at 390V 

Figure 6 – typical delta temperature between case (no heat-sink) and ambient with 1oz FR4 vs. power dissipation in the module 

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Figure 7 – typical delta temperature between case (no heat-sink) and ambient with 2oz FR4 vs. power dissipation in the module 

Figure 8 – Typical thermal resistance vs. power dissipation in the module (no heat sink) with 1oz FR4 

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Figure 9 – Typical thermal resistance vs. power dissipation in the module (no heat sink) with 2oz FR4 

Figure 10 – Typical thermal resistance vs. area per module (no heat sink) with two layers FR4 

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## **Qualification†** 

|||**Qualification†lification†cation†ion†on†n††**|
|---|---|---|
|**Qualification Level**||Industrial††<br>(per JEDEC JESD 47)|
|**Moisture Sensitivity Level**||MSL3†††<br>(per IPC/JEDEC J-STD-020)|
|**ESD**|Human Body Model|Class 1C<br>(per JEDEC standardANSI/ESDA/JEDEC JS-001)|
||Machine Model|Class A<br>(per EIA/JEDEC standard JESD22-A115)|
|**RoHS Compliant**||Yes|



- Qualification standards can be found at International Rectifier’s web site http://www.irf.com/ 

- †† Higher qualification ratings may be available should the user have such requirements.  Please contact your International Rectifier sales representative for further information. 

- ††† Higher MSL ratings may be available for the specific package types listed here.  Please contact your International Rectifier sales representative for further information. 

## **Module Pin-Out Description** 

|**Pin**|**Name**|**Description**|
|---|---|---|
|1, 4, 7, 32|COM|Low Side Gate Drive Return|
|2|VCC|15V Gate Drive Supply|
|3|HIN|Logic Input for High Side (Active High)|
|5|LIN|Logic Input for Low Side (Active Low)|
|6|DT|Dead time|
|8, 9, 10|V-|Low Side Source Connection|
|11–19|VS|Phase Output|
|20– 28|V+|DCBus|
|29–30|VS|Phase Output (-ve Bootstrap Cap Connection)|
|31|VB|High Side Floating Supply (+ve Bootstrap Cap Connection)|



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7 6 5 4 3 2 1<br>8 31<br>9 30<br>32<br>10 29<br>11 28<br>12 27<br>13 26<br>14 25<br>15 24<br>16 23<br>17 18 19 20 21 22<br>**----- End of picture text -----**<br>


Exposed pad (Pin 32) has to be connected to COM for better electrical performance 

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**IRSM808-105MH** ~~a~~ 

## **Package Outline IRSM808-105MH (Bottom View), 1 of 2** 

Dimensions in mm 

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## **Package Outline IRSM808-105MH (Bottom View), 2 of 2** 

Dimensions in mm 

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## **Package Outline IRSM808-105MH (Top & Side View)** 

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Dimensions in mm<br>**----- End of picture text -----**<br>


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**IRSM808-105MH** ~~a~~ 

## **Top Marking** 

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## **Typical Application Connection IRS808-105MH** 

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**----- Start of picture text -----**<br>
VBUS<br>HVIC HVIC HVIC<br>XTAL0 UH efroiyS VCCHIN HOVB VH tir. VCCHIN HOVB WH VCCHIN HOVB “Tt:<br>UL LIN VS VL LIN VS WL LIN VS<br>XTAL1 VHVL COM LO U COM LO V COM LO W<br>SPD-REF AIN2 WHWL IRSM808-105MH IRSM808-105MH IRSM808-105MH<br>GATEKILL<br>IRMCK171 VDD<br>Power VDD AIN1 .<br>Supply VDDCAP CS_U+<br>VSS CS_V+<br>LL REST<br>**----- End of picture text -----**<br>


Figure 1: Typical Application Connection 

1. Bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will further improve performance. 

2. In order to provide a good decoupling between VCC-VSS abd VB-VS terminals, the capaciotrs shown connected at these terminals should be located very close to the module pins. Additional high frequency capacitors, typically 0.1uF, are recommended. 

3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made based on IR Design tip DT04-4 or application note AN-1044. 

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## ~~IsaR~~ 

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V I<br>DS D<br>50%<br>HIN /LIN 90% ID 50%<br>VDS<br>HIN /LIN<br>10% ID<br>tr<br>TON<br>**----- End of picture text -----**<br>


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I V<br>D DS<br>90% ID<br>50% HIN /LIN<br>HIN /LIN<br>50%<br>VCE<br>10% ID<br>tf<br>TOFF<br>**----- End of picture text -----**<br>


Figure 3a. Input to Output propagation turn-on delay time. 

Figure 3b. Input to Output propagation turn-off delay time. 

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IF<br>VDS<br>HIN/LIN<br>Irr<br>/<br>trr<br>A |<br>**----- End of picture text -----**<br>


Figure 3c. Diode Reverse Recovery 

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**IRSM808-105MH** ~~a~~ 

Data and Specifications are subject to change without notice **IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information 

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## Links

- [View this product on Novapart](https://novapart.co/products/IRSM808-105MH/motor-driver-controller-half-bridge-74v-to-98v)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irsm808-105mh/ipm-module-mosfet-500v-10a-pqfn/dp/2781307)
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