# Motor Driver/Controller, Half Bridge, 10V to 20V, 40V/80A/3 Outputs, PQFN-28

![Product image](https://novapart.co/image/farnell:2781286/)

**URL**: https://novapart.co/products/IRSM005-800MHTR/motor-driver-controller-half-bridge-10v-to-20v-40v
**SKU**: IRSM005-800MHTR
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || Intelligent Power Modules
**Price**: €1.7500
**Stock**: 10+

## Description

Motor Type:Half Bridge; No. of Outputs:3Outputs; Output Current:80A; Output Voltage:40V; Driver Case Style:PQFN; No. of Pins:28Pins; Supply Voltage Min:10V; Supply Voltage Max:20V; Ope

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (27-Jun-2018) |
| Ipm Series | CIPOS Nano |
| Product Range | CIPOS Nano |
| Ipm Case Style | PQFN |
| Ipm Power Device | MOSFET |
| Isolation Voltage | - |
| Current Rating (Ic / Id) | 80A |
| Voltage Rating (Vces / Vdss) | 40V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2781286/)

**IRSM005-800MH** ~~a~~ 

## **Half-Bridge IPM for Low Voltage Applications** 

## uliPM™ 

## 80A, 40V 

## **Description** 

The IRSM005-800MH is a general purpose half-bridge with integrated gate driver in an attractive 7x8mm PQFN package. It is a general purpose building block suitable for a variety of low voltage applications where power density is of critical importance. Typical examples would be advanced motor drives, dc-to-ac and dcto-dc converters. 

## **Features** 

- Package with low thermal resistance and minimal parasitics 

- Low on-resistance HEXFETs: 2.7 mΩ typ. 

- Undervoltage lockout on logic supply 

- Independent gate drive in phase with logic input 

- Gate drive supply range from 10V to 20V 

- Propagation delay matched to defined spec 

- 3.3V, 5V and 15V logic input compatible 

- RoHS compliant 

## **Internal Electrical Schematic** 

## **Ordering Information** 

|**Orderable Part Number**|**Package Type**|**Form**|**Quantity**|
|---|---|---|---|
|IRSM005800MH|PQFN 7x8mm|Tray|1300|
|IRSM005800MHTR|PQFN 7x8mm|Tape and Reel|2000|



1 www.irf.com © 2014 International Rectifier ~~ee~~ 

cMOTION™ 

March 19, 2014 

**IRSM005-800MH** ~~rd~~ 

## ~~IsaR~~ 

## **Absolute Maximum Ratings** 

Absolute maximum ratings indicate sustained limits beyond which damage to the module may occur. These are not tested at manufacturing.  All voltage parameters are absolute voltages referenced to VSS unless otherwise stated in the table.  The thermal resistance rating is measured under board mounted and still air conditions. 

|~~es~~|||||
|---|---|---|---|---|
|**Symbol**<br>~~es~~<br>~~es~~|**Description**|**Min**|**Max**|**Unit**|
|VDS<br>~~es~~<br>~~es~~|MOSFET Drain-to-Source Voltage|---|40|V|
|Io<br>~~es~~<br>~~a~~|Maximum DC current per MOSFET @ TC=25°C (Note1)|---|80|A|
|Pd<br>~~a~~<br>~~es~~|Maximum Power dissipation per MOSFET @ TC=100°C|---|13|W|
|TJ(MOSFET & IC)<br>~~es~~|Maximum Operating Junction Temperature|---|150|°C|
|TS<br>~~es~~<br>~~a~~<br>~~es~~|Storage Temperature Range|-40|150|°C|
|VGS<br>~~es~~|Gate to Source voltage|+/- 20||V|
|VB<br>~~es~~<br>~~a~~|High side floating absolute supply voltage|-0.3|225||
|VS<br>~~a~~<br>~~es~~|High side floating supply offset voltage|VB- 20|VB+ 0.3||
|VCC<br>~~es~~|Low Side fixed supply voltage|-0.3|25||
|VLO<br>~~es~~<br>~~a~~|Low side output voltage|-0.3|VCC+0.3V||
|VHO<br>~~a~~<br>~~ee~~|High side output voltage|-0.3|VCC+0.3V||
|VIN<br>~~ee~~|Logic input voltage LIN, HIN|-0.3|VCC+0.3V||



Note1: Calculated based on maximum junction temperature. Bond wires current limit is 49A 

## **Inverter Static Electrical Characteristics** 

VBIAS (VCC, VBS)=15V, TJ=25ºC, unless otherwise specified. 

|**Symbol**<br>~~GeO~~|**Description**<br>~~GeO~~|**Min**<br>~~GeO~~|**Typ**<br>~~GeO~~|**Max**<br>~~GeO~~|**Units**<br>~~GeO~~|**Conditions**<br>~~GeO~~|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~a~~|Drain-to-Source Breakdown Voltage|40|---|---|V|HIN=LIN=0V, ID=250µA|
|VGS(TH)<br>~~a~~|Gate Threshold Voltage<br>~~Ge~~|2<br>~~Ge~~|---|4|V|ID=100µA|
|RDS(ON)<br>~~TE~~|Drain-to-Source Voltage<br>~~TE~~|---<br>~~TE~~<br>~~a~~|2.7<br>~~TE~~|5.0<br>~~TE~~<br>~~ee~~|mΩ<br>~~TE~~<br>~~ee~~|ID=10A, TJ=25°C<br>~~TE~~<br>~~ee~~|
|||---<br>~~TE~~<br>~~a~~|4.2<br>~~TE~~|~~TE~~<br>~~ee~~||ID=10A, TJ=150°C<br>~~TE~~<br>~~ee~~|
|IDSS<br>~~a~~<br>~~————e~~|Zero Gate Voltage Drain Current<br>~~a~~<br>~~————e~~|---<br>~~a~~<br>~~a~~|~~a~~|20<br>~~ee~~<br>~~a~~|µA<br>~~ee~~<br>~~a~~<br>~~ee~~<br>~~————e~~|HIN=LIN=0V, V+=40V<br>~~ee~~<br>~~a~~|
|||---<br>~~a~~<br>~~ee~~<br>~~————e~~|---<br>~~a~~<br>~~ee~~<br>~~————e~~|150<br>~~a~~<br>~~ee~~<br>~~————e~~||HIN=LIN=0V, V+=40V,<br>TJ=125°C<br>~~a~~<br>~~ee~~<br>~~————e~~|
|IGSS<br>~~————e~~|Gate to Source Forward Leakage<br>~~————e~~|---<br>~~————e~~|---<br>~~————e~~|100<br>~~————e~~|nA<br>~~————e~~|VGS=20V<br>~~————e~~|
||Gate to Source Reverse Leakage<br>~~————e~~<br>~~ee~~|---<br>~~————e~~<br>~~ee~~|---<br>~~————e~~<br>~~ee~~|-100<br>~~————e~~<br>~~ee~~||VGS=-20V<br>~~————e~~|
|RG<br>~~————e~~<br>~~a~~|Internal Gate Resistance<br>~~————e~~<br>|---<br>~~————e~~<br>|1.5<br>~~————e~~<br>|---<br>~~————e~~<br>|Ω<br>~~————e~~<br>|~~————e~~<br>|
|VSD<br>~~—~~|Mosfet Diode Forward Voltage Drop<br>~~—~~|---<br>~~—~~|0.8<br>~~—~~|0.9<br>~~—~~|V<br>~~—~~|IF=10A<br>~~—~~|
|||---<br>~~—~~<br>~~a~~|0.55<br>~~—~~<br>~~a~~|~~—~~<br>~~a~~||IF=10A, TJ=150°C<br>~~—~~<br>~~ee~~|
|RBSOA<br>~~—~~<br>~~ee~~|Reverse Bias Safe Operating Area<br>~~—~~<br>~~ee~~|FULL SQUARE, limited by TJmax<br>~~—~~<br>~~a~~<br>~~eee~~||||V+= 40V,<br>VCC=+15V to 0V<br>~~—~~<br>~~ee~~<br>~~eee~~|
|Io@ TA=60°C<br>~~ee~~|RMS Phase Current, sinusoidal<br>modulation, 5kHz<br>~~ee~~|---|13.5|---<br>~~eee~~|ARMS<br>~~eee~~|V+=32V, TJ=125°C, MI=1,<br>PF=0.8, typical board<br>mount. See Figure 2.<br>~~eee~~<br>|
|Io@ TA=60°C<br>~~ee~~<br>~~a~~|RMS Phase Current, sinusoidal<br>modulation,20kHz<br>~~ee~~<br>|---<br>|6<br>|---<br>~~eee~~<br>|ARMS<br>~~eee~~<br>||
|EAS<br>~~ee~~<br>~~ee~~|Single Pulse Avalanche Energy<br>~~ee~~<br>~~ee~~|9.2<br>~~ee~~|---<br>~~ee~~|---<br>~~eee~~<br>~~ee~~|mJ<br>~~eee~~<br>~~ee~~|~~eee~~<br>~~ee~~|



2 www.irf.com © 2014 International Rectifier 

March 19, 2014 

**IRSM005-800MH** ~~rd~~ 

## ~~IsaR~~ 

## **Inverter Dynamic Electrical Characteristics** 

VBIAS (VCC, VBS)=15V, TJ=25ºC, unless otherwise specified. 

|gfs<br>~~eG~~|Forward Transconductance<br>~~eG~~|159<br>~~eG~~|---<br>~~eG~~|---<br>~~eG~~|S<br>~~eG~~|ID=50A  VDS= 10V<br>~~eG~~|
|---|---|---|---|---|---|---|
|QG<br>~~a~~<br>~~es~~|Total Gate Charge|---|65|98|nC|ID=50A<br>VDS= 20V<br>VGS=10V|
|QGS<br>~~es~~<br>~~es~~|Gate to Source Charge|---|16|---|||
|QGD<br>~~es~~<br>~~es~~<br>~~Rs~~|Gate to Drain Charge|---|23|---|||
|QSYNC<br>~~es~~<br>~~Rs~~|Total Gate Charge Sync. (QG- QGD )|---|42|---||ID=50A,VDS= 0V,VGS= 10V|
|TDON<br>~~Rs~~<br>~~ee~~|Mosfet Turn On Delay Time<br>~~ee~~|---<br>~~ee~~|11<br>~~ee~~|---<br>~~ee~~|ns|ID=30A<br>VDD= 20V<br>VGS=10V<br>RG=2.7Ω|
|TR<br>~~a~~<br>~~es~~|Mosfet Rise Time|---|37|---|||
|TDOFF<br>~~es~~<br>~~es~~|Mosfet Turn Off Delay Time|---|33|---|||
|TF<br>~~es~~<br>~~es~~|Mosfet Fall Time|---|26|---|||
|CISS<br>~~es~~<br>~~ee~~|Input Capacitance<br>~~ee~~|---<br>~~ee~~|3174<br>~~ee~~|---<br>~~ee~~|pF|F= 1.0MHz<br>VDS= 25V<br>VGS=0V|
|COSS<br>~~ee~~|Output Capacitance<br>~~ee~~|---<br>~~ee~~|479<br>~~ee~~|---<br>~~ee~~|||
|CRSS<br>~~a~~<br>~~Ps~~|Reverse Transfer Capacitance|---|332|---|||
|TRR<br>~~Ps~~<br>~~es~~|Reverse Recovery TIme|---|16|---|ns|IF=50A<br>VR=34V<br>dI/dt= 100A/us|
|QRR<br>~~Ps~~<br>~~es~~|Reverse Recovery Charge|---|5|---|nC||
|IRRM<br>~~es~~<br>~~ee~~|Reverse Recovery Current<br>~~ee~~|---<br>~~ee~~|0.5<br>~~ee~~|---<br>~~ee~~|A<br>~~ee~~||



## **Recommended Operating Conditions Driver Function** 

For proper operation the device should be used within the recommended conditions. All voltages are absolute referenced to COM. The VS offset is tested with all supplies biased at 15V differential. 

|**Symbol**|**Definition**|**Min**|**Typ**|**Max**|**Units**|
|---|---|---|---|---|---|
|VB|High side floatingsupplyvoltage|VS+10|VS+15|VS+20|V|
|VS|High side floatingsupplyoffset voltage|Note 1|---|40|V|
|VCC|Low side and logic fixed supplyvoltage|10|15|20|V|
|VIN|Logic input voltage LIN,HIN|COM|---|VCC|V|
|HIN|High side PWMpulse width|1|---|---|µs|
|Deadtime|Suggested dead time between HIN and LIN|0.3|0.5|---|µs|



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March 19, 2014 

**IRSM005-800MH** ~~rd~~ 

## ~~I<aR~~ 

## **Static Electrical Characteristics Driver Function** 

VBIAS (VCC, VBS)=15V, TJ=25ºC, unless otherwise specified. The VIN, and IIN parameters are referenced to COM 

|referenced to COM|referenced to COM||||||
|---|---|---|---|---|---|---|
|**Symbol**<br>~~a~~<br>~~a~~|**Definition**<br>|**Min**<br>~~ee~~<br>|**Typ**<br>~~ae~~<br>|**Max**<br>~~oe~~<br>|**Units**<br>i|**Test**<br>**Conditions**|
|VIH<br>~~—~~<br>~~a~~|Positive going input threshold for LIN, HIN<br>~~ee~~<br>|2.5<br>~~ee~~<br>~~ee~~<br>|---<br>~~ee~~<br>~~ae~~<br>|---<br>~~ee~~<br>~~oe~~<br>|V<br> i<br>~~a~~|VCC=10 to<br>20V|
|VIL<br>~~a~~|Negativegoinginput threshold for LIN, HIN<br>|---<br>~~ee~~<br>|---<br>~~ae~~<br>|0.8<br>~~oe~~<br>|||
|VOH<br>~~aGe~~|High Level Output Voltage<br>~~Ge~~|---<br>~~ee ~~<br>~~Ge~~|0.05<br> ~~ae ~~<br>~~Ge~~|0.2<br> ~~oe ~~<br>~~Ge~~||IO=2mA|
|VOL<br>~~a~~|Low Level Output Voltage<br>~~a~~<br>~~a~~|---<br>~~a~~<br>~~a~~|0.02<br>~~a~~<br>~~a~~|0.1<br>~~a~~<br>~~a~~||~~a~~|
|VCCUV+<br>VBSUV+<br>~~a~~<br>~~ae~~<br>~~a~~|VCC/VBSsupply undervoltage, Positive going<br>threshold<br>~~a~~<br>~~ee~~<br>|8.0<br>~~a~~<br>~~ee~~<br>~~ee~~<br>|8.9<br>~~a~~<br>~~ee~~<br>~~ee~~<br>|9.8<br>~~a~~<br>~~ee~~<br>||~~**ee**~~|
|VCCUV-<br>VBSUV-<br>~~ae~~<br>~~a~~|VCC/VBSsupply undervoltage, Negative going<br>threshold<br>~~ee~~<br>|7.4<br>~~ee~~<br>~~ee~~<br>|8.2<br>~~ee~~<br>~~ee~~<br>|9.0<br>~~ee~~<br>||~~**ee**~~|
|VCCUVH<br>VBSUH<br>~~ae~~<br>~~a~~|VCC/VBSsupply undervoltage lock-out hysteresis<br>~~ee~~<br>~~ee~~|---<br>~~ee~~<br>~~ee~~<br>~~ee~~|0.8<br>~~ee~~<br>~~ee~~<br>~~ee~~|---<br>~~ee~~<br>~~ee~~||~~**ee**~~|
|ILK<br>~~a~~<br>~~a~~|Offset Supply Leakage Current<br>~~ee~~<br>|---<br>~~ee~~<br>|---<br>~~ee~~<br>|50<br>|µA<br>~~a~~|VB=VS=200V<br>~~a~~|
|IQBS<br>~~a~~<br>~~a~~|Quiescent VBSsupply current<br>~~ee~~<br>|---<br>~~ee~~<br>|45<br>~~ee~~<br>|75<br>||VIN=0V or 5V<br>~~a~~|
|IQCC<br>~~a~~|Quiescent VCCsupply current<br>~~ee~~<br>~~ee~~|---<br>~~ee~~<br>~~ee~~|250<br>~~ee~~<br>~~ee~~|500<br>~~ee~~|||
|IIN+<br>~~a~~|Input bias current VIN=5V for LIN, HIN<br>~~a~~<br>~~a~~|---<br>~~a~~<br>~~a~~|4<br>~~a~~<br>~~a~~|10<br>~~a~~<br>~~a~~||VIN= 5V<br>~~a~~|
|IIN-<br>~~a~~|Input bias current VIN=0V for LIN, HIN<br>~~a~~|---<br>~~a~~|0.5<br>~~a~~|1<br>~~a~~||VIN=0V|
|IO+|IC high output short circuit current|200|290|---|mA|VO= 0V,<br>VIN= 5V,<br>PW <10us|
|IO-<br>~~a~~|IC low output short circuit current<br>~~a~~<br>~~ee~~|420<br>~~a~~<br>~~ee~~|600<br>~~a~~<br>~~ee~~|---<br>~~a~~<br>~~ee~~|||



## **Dynamic Electrical Characteristics Driver Function** 

VBIAS (VCC, VBS)=15V, TJ=25ºC unless otherwise specified, CL = 1000 pF, Driver only timing. 

|**Symbol**|**Description**|**Min**|**Typ**|**Max**|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|TR|IC Turn on Rise Time|---|50|150|ns||
|TF|IC Turn off Fall Time|---|35|90|||
|TON|IC Input to Output propagation turn-<br>on delay time|---|160|220|||
|TOFF|IC Input to Output propagation turn-<br>offdelay time|---|150|220|||
|MT|IC Delay matching, HS and LS turn-<br>on/off|---|---|50|||



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**IRSM005-800MH** ~~rd~~ 

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## **Thermal and Mechanical Characteristics** 

|**Symbol**|**Description**|**Min**|**Typ**|**Max**|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|Rth(J-B)|Thermal resistance, junction to<br>mounting pad, each MOSFET|---|3.8|---|°C/W|Standard reflow-solder<br>process|
|Rth(J-A)|Thermal resistance, junction to<br>ambient, each MOSFET|---|40|---|°C/W|Mounted on 50mm2of<br>four-layer FR4 with 28 vias|



## **Input-Output Logic Level Table** 

|HIN|LIN|U,V,W|
|---|---|---|
|HI|HI|Shoot-through|
|LO|LO|**|
|HI|LO|V+|
|LO|HI|0|



* V+ if motor current is flowing into VS, 0 if current is flowing out of VS into the motor winding 

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**==> picture [161 x 174] intentionally omitted <==**

**----- Start of picture text -----**<br>
8.0<br>ID = 50A<br>7.0 Till<br>6.0<br>ane<br>5.0<br>SUREeEEe TJ = 125°C<br>4.0 PINE<br>3.0 eS<br>2.0 POSER TJ = 25°C<br>1.0 Cle EE<br>4 6 8 10 12 14 16 18 20<br>VGS, Gate -to -Source Voltage  (V)<br>)Ω<br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


**Fig. 1 Typical On Resistance vs Gate Voltage** 

**==> picture [165 x 369] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>100 T J  = 150°C<br>ne) Ane<br>TJ = 25°C<br>10<br>Se<br>/ VDS = 10V<br>≤60µs PULSE WIDTH<br>1.0 ee<br>3 4 5 6 7 8<br>VGS, Gate-to-Source Voltage (V)<br>Fig. 3 Typical Transfer Characteristic<br>1000<br>VGS<br>TOP           15V<br>10V<br>8.0V<br>na 4 7.0V<br>6.0V<br>5.5V<br>100 5.0V<br>H i BOTTOM 4.5V<br>10<br>4.5V<br>au<br>≤ 60µs PULSE WIDTH<br>Tj = 25°C<br>1 rt re<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig. 3 Typical Transfer Characteristic** 

**Fig. 5 Typical Output Characteristic @ 25C** 

**==> picture [180 x 565] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.8<br>ID = 50A<br>1.61.4 V GS  = 10V TILLY TTT<br>1.2 LEELA<br>a<br>1.0<br>IA<br>0.8<br>A<br>0.6 AEE<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>Fig.2 Normalized On Resistance vs Temperature<br>1000<br>VGS<br>TOP           15V<br>10V<br>8.0V<br>7.0V<br>6.0V<br>5.5V<br>100 5.0V<br>| ff BOTTOM 4.5V<br>4.5V<br>10<br>ett<br>≤ 60µs PULSE WIDTH<br>eee ettt email<br>1 SESeee Tj = 150°C Ee ttt<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig.4 Typical Output Characteristic @ 150C<br>100000 VGS   = 0V,       f = 1 MHZ<br>Ciss   = C gs + Cgd,  C ds  SHORTED<br>C rss    = C gd<br>= Coss   = Cds + Cgd<br>10000<br>Ciss<br>Coss<br>—<br>1000 Crss<br>= ool<br>iy<br>100 PEEP FTTH<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig.2 Normalized On Resistance vs Temperature** 

**Fig.4 Typical Output Characteristic @ 150C** 

**Fig. 6 Typical Capacitance vs Drain to Source Voltage** 

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**==> picture [440 x 567] intentionally omitted <==**

**----- Start of picture text -----**<br>
14.0 1000<br>ID= 50A<br>12.0<br>VDS= 32V<br>10.0 VDS= 20V 100 TJ = 150°C<br>8.0<br>6.0 10 TJ = 25°C<br>CCEA Poff<br>4.0<br>2.0 V GS  = 0V<br>1.0<br>0.0 FECEEEETE 0.0 pt 0.4 0.8 | 1.2 1.6 2.0<br>0 10 20 30 40 50 60 70 80 90 VSD, Source-to-Drain Voltage (V)<br> QG,  Total Gate Charge (nC)<br>Fig.8 Typical Diode Forward Voltage Drop<br>Fig. 7 Typical Gate Charge vs Gate Voltage<br>4.5<br>50<br>Id = 1.0mA 4.0<br>48<br>[TE 3.5 ag<br>46 3.0<br>EUREREDZa0e EERE ID = 100µA<br>ID = 1.0mA<br>44 EAL Wa 2.5 I D  = 1.0A SST ZaxNce\<br>2.0<br>42<br>OPZAn ne 1.5 pf PN<br>40 ALLELE -75 -50 -25 0 25 50 75 100 125 150<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Temperature ( °C )<br>TJ , Temperature ( °C )<br>Fig.10 Threshold Voltage vs Temperature<br>Fig. 9 Typical Breakdown Voltage vs Temperature  100<br>7 IF = 30A<br>IF = 30A VR = 34V<br>80<br>6 V R  = 34V I TJ = 25°C || Le<br>TJ = 25°C TJ = 125° C<br>5 TJ = 125° C TT 60 |<<br>4 7] p<br>40<br>3<br>eT ptt a<br>2 20<br>1 pe ERE<br>0<br>0 TT 0 pret 200 400 600 | 800 1000<br>0 200 400 600 800 1000 diF /dt (A/µs)<br>diF /dt (A/µs)<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>ISD, Reverse Drain Current (A)<br>IRRM (A)<br>VGS(th), Gate threshold Voltage (V)<br>QRR (nC)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig. 7 Typical Gate Charge vs Gate Voltage** 

**Fig. 9 Typical Breakdown Voltage vs Temperature** 

**Fig. 12 Typical Recovery Charge vs Temperature** 

**Fig. 11 Typical Recovery Current vs dI/dt** 

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**IRSM005-800MH** ~~rd~~ 

## ~~TéaR~~ 

## **Module Pin-Out Description** 

|**Pin**|**Name**|**Description**|
|---|---|---|
|3,6,8|COM|Negative of Gate Drive SupplyVoltage|
|2|VCC|15V Gate Drive Supply|
|4|HIN|Logic Input for High Side(Active High)|
|5|LIN|Logic Input for Low Side(Active High)|
|7|LO|Low Side FET Gate|
|9|G2|Low Side Gate Drive Output|
|10,16,17|VS|Phase Output|
|11 – 15|V-|Low Side Source Connection|
|18 – 23|V+|DC Bus|
|24|G1|High Side Gate Drive Output|
|25|HO|High Side FET Gate|
|26 – 27|VS|Negative of BootstrapSupply|
|1|VB|Positive of BootstrapSupply|



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**----- Start of picture text -----**<br>
16 VS 17 VS 18-V+<br>= —<br>19 V+<br>V- 15<br>B<br>V- 14 20 V+<br>B C|<br>V- 13 21 V+<br>|) C |<br>V- 12 22 V+<br>V- 11 23 V+<br>VS 10 24 G1<br>G2 9 25 HO<br>28<br>COM 8 26 VS<br>LO 7 ~ ann a nan + 27 VS<br>COM LIN HIN COM VCC VB<br>6 5 4 3 2 1<br>BOTTOM OF PACKAGE VIEW<br>**----- End of picture text -----**<br>


Exposed pad (Pin 28) has to be connected to COM for better electrical performance 

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March 19, 2014 

**IRSM005-800MH** ~~rd~~ 

## r__ | ad ~~IczR~~ 

Figure 13: Typical Application Connection 

1. Bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will further improve performance. 

2. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made based on IR Design tip DT04-4 or application note AN-1044. 

**==> picture [375 x 195] intentionally omitted <==**

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20<br>18<br>16<br>14<br>12 TTI NTE<br>10 Ser ies1<br>8 IE<br>EIN Eh<br>6<br>4<br>2<br>0<br>0.1 1 10 100<br>**----- End of picture text -----**<br>


Figure 14:  Typical Output Current (RMS of fundamental) vs. Modulation Frequency Sinusoidal Modulation, V[+] =32V, TJ=125°C, TA=60°C, MI=1, PF=0.8, mounted on 50 mm[2] of FR4 

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**IRSM005-800MH** ~~rd~~ 

## ~~IsaR~~ 

|**Qualification **|**Qualification **||
|---|---|---|
|**Qualification Level**||Industrial††<br>(per JEDEC JESD 47E)|
|**Moisture Sensitivity Level**||MSL3†††<br>(per IPC/JEDEC J-STD-020C)|
|**ESD**|Machine Model|Class B (±200V)<br>(per JEDEC standard JESD22-A115A)|
||Human Body Model|Class 1C (±1000V)<br>(per EIA/JEDEC standard EIA/JES-001A-2011)|
|**RoHS Compliant**||Yes|



- Qualification standards can be found at International Rectifier’s web site HUhttp://www.irf.com/U 

- †† Higher qualification ratings may be available should the user have such requirements.  Please contact your International Rectifier sales representative for further information. 

- ††† Higher MSL ratings may be available for the specific package types listed here.  Please contact your International Rectifier sales representative for further information. 

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**IRSM005-800MH** 

## **Package Outline (Top & Side view)** 

11 www.irf.com © 2014 International Rectifier ~~_~~ 

March 19, 2014 

TéSdR 

**IRSM005-800MH** 

## **Package Outline (Bottom View, 1 of 2)** 

1. For mounting instruction see AN-1178. 

2. For recommended PCB via design see AN-1091. 

3. For recommended design, solder profile, integration and rework guidelines see AN-1028. 

4. For board inspection guidelines see AN-1133. 

12 www.irf.com © 2014 International Rectifier 

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**IRSM005-800MH** 

## **Tape and Reel Details** 

13 www.irf.com © 2014 International Rectifier ~~ee~~ 

March 19, 2014 

~~1é4R~~ 

**IRSM005-800MH** ~~rd~~ 

Data and Specifications are subject to change without notice **IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information 

14 www.irf.com © 2014 International Rectifier 

March 19, 2014 



## Links

- [View this product on Novapart](https://novapart.co/products/IRSM005-800MHTR/motor-driver-controller-half-bridge-10v-to-20v-40v)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irsm005-800mhtr/ipm-module-mosfet-40v-80a-pqfn/dp/2781286)
---

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