# Power MOSFET, N Channel, 55 V, 51 A, 0.0135 ohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2777392/)

**URL**: https://novapart.co/products/IRLZ44ZSTRLPBF/power-mosfet-n-channel-55-v-51-a-00135-ohm-to-263
**SKU**: IRLZ44ZSTRLPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.3000
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:51A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.011ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (27-Jun-2018) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 80W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 51A |
| Drain Source On State Resistance | 0.0135ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2777392/)

## PD - 95539A 

## IRLZ44ZPbF IRLZ44ZSPbF IRLZ44ZLPbF 

## **Features** 

Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free 

## **Description** 

This HEXFET[®] Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.  Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. 

## HEXFET[®] Power MOSFET 

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D<br>VDSS = 55V<br>R  = 13.5m Ω<br>DS(on)<br>G<br>ID = 51A<br>S<br>**----- End of picture text -----**<br>


D[2] Pak TO-262 IRLZ44ZSPbF IRLZ44ZLPbF 

TO-220AB IRLZ44ZPbF 

## **Absolute Maximum Ratings** 

||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V(Silicon Limited)<br>~~a~~|51<br>~~a~~|A<br>~~a~~<br>~~a~~|
|ID@ TC= 100°C|Continuous Drain Current, VGS@ 10V<br>~~a~~|36<br>~~a~~||
|IDM|~~Pulsed Drain Current~~|204||
|PD@TC= 25°C|Power Dissipation<br>~~a~~|80<br>~~a~~|W<br>~~a~~|
||Linear Derating Factor<br>~~a~~|0.53<br>~~a~~|W/°C<br>~~a~~|
|VGS|Gate-to-Source Voltage<br>~~**a**~~|± 16<br>~~**a**~~|V<br>~~**a**~~|
|EAS (Thermally limited)|~~Single Pulse Avalanche Energy~~<br>~~**a**~~<br>~~«Se~~|78<br>~~**a**~~<br>~~«Se~~|mJ<br>~~**a**~~<br>~~«Se~~|
|EAS(Tested )|~~Single Pulse Avalanche Energy Tested Value~~<br>~~«Se~~|110<br>~~«Se~~||
|IAR|~~Avalanche Current~~<br>~~a~~|See Fig.12a, 12b, 15, 16<br>~~a~~<br>~~po~~|A<br>~~a~~|
|EAR<br>~~po~~|~~Repetitive Avalanche Energy~~<br>~~a~~<br>~~po~~||mJ<br>~~a~~<br>~~po~~|
|TJ<br>TSTG<br>~~po~~|Operating Junction and<br>Storage Temperature Range<br>~~a~~<br>~~po~~|-55  to + 175<br>~~a~~<br>~~po~~|°C<br>~~a~~<br>~~po~~<br>~~a~~|
|~~po~~|Soldering Temperature, for 10 seconds<br>~~po~~<br>~~a~~|300 (1.6mm from case )<br>~~po~~<br>~~a~~||
|~~po~~|Mounting Torque, 6-32 or M3 screw<br>~~po~~<br>~~a~~|10 lbf in (1.1N m)<br>~~po~~<br>~~a~~|~~po~~<br>~~a~~|



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**Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**<br>~~I~~|**Typ.**<br>~~OO~~|**Max. **<br>~~GR~~|**Units**<br>~~QO~~|**Conditions**<br>~~QO~~|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~Pr~~|Drain-to-Source Breakdown Voltage<br>~~es~~<br>~~Pr~~|55<br>~~es~~<br>~~I~~<br>~~OO~~|–––<br>~~es~~<br>~~OO~~<br>~~OO~~|–––<br>~~es~~<br>~~GR~~<br>~~GO~~|V<br>~~es~~<br>~~QO~~<br>~~QO~~|VGS= 0V, ID= 250µA<br>~~es~~<br>~~QO~~<br>~~QO~~|
|∆V(BR)DSS/∆TJ<br>~~Pr~~|Breakdown Voltage Temp. Coefficient<br>~~es~~<br>~~RD~~<br>~~Prrrr~~|–––<br>~~es~~<br>~~I ~~<br>~~RD~~<br>~~OO~~|0.05<br>~~es~~<br> ~~OO~~<br>~~RD~~<br>~~OO~~|–––<br>~~es~~<br>~~GR ~~<br>~~RD~~<br>~~GO~~<br>~~ef~~|V/°C<br>~~es~~<br> ~~QO~~<br>~~RD~~<br>~~QO~~<br>~~ef~~|Reference to 25°C, ID= 1mA<br>~~es~~<br>~~QO~~<br>~~RD~~<br>~~QO~~<br>~~ef~~<br>~~Oe~~|
|RDS(on)<br>~~Pr~~<br>~~Perr~~|Static Drain-to-Source On-Resistance<br>~~RD~~<br>~~Prrrr~~<br>~~Perr~~|–––<br>~~RD~~<br>~~OO~~|11<br>~~RD~~<br>~~OO~~|13.5<br>~~RD~~<br>~~GO~~<br>~~ef~~<br>~~ef~~|~~m~~Ω<br>~~RD~~<br>~~QO~~<br>~~ef~~<br>~~ef~~|VGS= 10V, ID= 31A<br>~~RD~~<br>~~QO~~<br>~~ef~~<br>~~Oe~~<br>~~ef~~<br>~~Oe~~|
|~~Pr~~<br>~~Perr~~|~~Pr rrr~~<br>~~Perr~~<br>~~Perr~~|–––<br>~~OO~~<br>~~Perr~~|–––<br>~~OO ~~<br>~~Perr~~|20<br> ~~GO ~~<br>~~ef~~<br>~~Perr~~<br>~~ef~~|~~m~~Ω<br> ~~QO~~<br>~~ef~~<br>~~Perr~~<br>~~ef~~|VGS= 5.0V, ID= 30A<br>~~QO~~<br>~~ef~~<br>~~Oe~~<br>~~Perr~~<br>~~ef~~<br>~~Oe~~<br>~~OT~~|
|~~Perr~~|~~Perr~~|–––|–––|22.5<br>~~ef~~|~~m~~Ω<br>~~ef~~<br>~~GO~~|VGS= 4.5V, ID= 15A<br>~~ef~~<br>~~Oe~~<br>~~OT~~<br>~~QO~~|
|VGS(th)<br>~~Perr~~|Gate Threshold Voltage<br>~~Perr~~<br>~~GD~~|1.0<br>~~GD~~|–––<br>~~GD~~|3.0<br>~~ef~~<br>~~GD~~|V<br>~~ef~~<br>~~GD~~<br>~~GO~~|VDS= VGS, ID= 250µA<br>~~ef~~<br>~~Oe~~<br>~~OT~~<br>~~GD~~<br>~~QO~~|
|gfs<br>~~Ce~~|Forward Transconductance<br>~~GD~~<br>~~Ce~~|27<br>~~GD~~<br>~~**|**~~|–––<br>~~GD~~<br>~~**|**~~|–––<br>~~GD~~<br>~~OEE~~|V<br>~~GD~~<br>~~GO ~~<br>~~OEE~~|VDS= 25V, ID= 31A<br>~~GD~~<br> ~~QO~~<br>~~OEE~~|
|IDSS<br>~~Ce~~|Drain-to-Source Leakage Current<br>~~ee~~<br>~~Ce~~|–––<br>~~**|**~~<br>~~ee~~|–––<br>~~**|**~~<br>~~ee~~|20<br>~~ee~~<br>~~OEE~~|µA<br>~~ee~~<br>~~OEE~~|VDS= 55V, VGS= 0V<br>~~ee~~<br>~~OEE~~|
|||–––<br>~~**|**~~<br>~~ee~~|–––<br>~~**|**~~<br>~~ee~~|250<br>~~ee~~<br>~~OEE~~||VDS= 55V, VGS= 0V, TJ= 125°C<br>~~ee~~<br>~~OEE~~|
|IGSS<br>~~Ce~~|Gate-to-Source Forward Leakage<br>~~ee~~<br>~~Ce~~<br>~~|~~|–––<br>~~ee~~<br>~~|~~|–––<br>~~ee~~<br>|200<br>~~ee~~<br>~~OEE~~<br>|nA<br>~~ee~~<br>~~OEE~~|VGS= 16V<br>~~ee~~<br>~~OEE~~|
||Gate-to-Source Reverse Leakage<br>~~Ce~~<br>~~|~~|–––<br>~~|TT~~|–––<br>~~TT~~|-200<br>~~OEE~~<br>~~TT~~||VGS= -16V<br>~~OEE~~|
|Qg<br>~~Ce~~|Total Gate Charge<br>~~Ce~~<br>~~|~~<br>~~es~~|–––<br>~~|~~<br>~~es~~|24<br><br>~~es~~|36<br>~~OEE~~<br><br>~~es~~|nC<br>~~OEE~~|VGS= 5.0V<br>ID= 31A<br>VDS= 44V<br>~~OEE~~<br>~~©~~|
|Qgs|Gate-to-Source Charge<br>~~es~~<br>~~es~~|–––<br>~~es~~|7.5<br>~~es~~|–––<br>~~es~~|||
|Qgd|Gate-to-Drain("Miller")Charge<br>~~es~~|–––|12|–––|||
|td(on)|Turn-On DelayTime<br>~~es~~<br>~~es~~|–––<br>~~es~~|14<br>~~es~~|–––<br>~~es~~|ns<br>~~———-++}|~~|VGS= 5.0V<br>VDD= 50V<br>ID= 31A<br>RG= 7.5Ω<br>~~©~~<br>~~———-++}|~~<br>~~&~~|
|tr|Rise Time<br>~~es~~|–––<br>~~es~~|160<br>~~es~~|–––<br>~~es~~|||
|td(off)|Turn-Off DelayTime<br>~~es~~|–––<br>~~es~~|25<br>~~es~~|–––<br>~~es~~|||
|tf|Fall Time<br>~~a~~<br>~~———-++}|~~|–––<br>~~a~~<br>~~———-++}|~~|42<br>~~a~~<br>~~———-++}|~~|–––<br>~~a~~<br>~~———-++}|~~|||
|LD|Internal Drain Inductance<br>~~a~~<br>~~———-++}|~~|–––<br>~~a~~<br>~~———-++}|~~|4.5<br>~~a~~<br>~~———-++}|~~|–––<br>~~a~~<br>~~———-++}|~~|nH<br>~~———-++}|~~|S<br>D<br>G<br>Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>~~———-++}|~~<br>~~&~~|
|LS|Internal Source Inductance<br>~~a~~<br>~~———-++}|~~|–––<br>~~a~~<br>~~———-++}|~~|7.5<br>~~a~~<br>~~———-++}|~~|–––<br>~~a~~<br>~~———-++}|~~|||
|Ciss|Input Capacitance<br>~~———-++}|~~<br>~~es~~|–––<br>~~———-++}|~~<br>~~es~~|1620<br>~~———-++}|~~<br>~~es~~|–––<br>~~———-++}|~~<br>~~es~~|pF<br>~~———-++}|~~|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz<br>~~———-++}|~~<br>~~&~~|
|Coss|Output Capacitance<br>~~es~~|–––<br>~~es~~|230<br>~~es~~|–––<br>~~es~~|||
|Crss|Reverse Transfer Capacitance<br>~~es~~|–––<br>~~es~~|130<br>~~es~~|–––<br>~~es~~|||
|Coss|Output Capacitance<br>~~es~~|–––<br>~~es~~|860<br>~~es~~|–––<br>~~es~~||VGS= 0V,  VDS= 1.0V,ƒ= 1.0MHz|
|Coss|Output Capacitance<br>~~es~~<br>~~es~~|–––<br>~~es~~|180<br>~~es~~|–––<br>~~es~~||VGS= 0V,  VDS= 44V,ƒ= 1.0MHz<br>~~@~~|
|Cosseff.|Effective Output Capacitance<br>~~es~~|–––|280|–––||VGS= 0V, VDS= 0V to 44V<br>~~@~~|



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1000<br>VGS<br>TOP           15V<br>10V<br>8.0V<br>5.0V<br>100 r r 4.5V<br>4.0V<br>3.5V<br>BOTTOM 3.0V<br>10 A A<br>F t<br>1 3.0V<br>eeEll eee ≤  60µs PULSE WIDTH eel eell<br>Tj = 25°C<br>0.1 eli maniil<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br>1000.0<br>PTT<br>T TT = 25°C  yy<br>J<br>100.0 | | ae<br>T = 175°C<br>J<br>YT | fy | |; | <f[ J] f<br>10.0 rtf; [| [| | ff]<br>Yet | | | |<br>ff<br>VDS = 20V<br>≤  60µs PULSE WIDTH<br>1.0 oe ty| |<br>2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>) (Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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1000<br>VGS<br>TOP           15V<br>10V<br>8.0V<br>5.0V<br>|<br>4.5V<br>100 4.0V<br>3.5V<br>BOTTOM 3.0V<br>y g|<br>10 7 20<br>3.0V<br>7) ip | ≤  60µs PULSE WIDTH IE ny<br>Tj = 175°C<br>1 nt eT<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>60<br>TJ = 175°C<br>40 aa<br>T = 25°C<br>J<br>LP<br>20 4Va<br>VDS = 10V<br>380µs PULSE WIDTH<br>0<br>0 10 20 30 40 50<br>ID, Drain-to-Source Current (A)<br>Gfs, Forward Transconductance (S)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 4.** Typical Forward Transconductance Vs. Drain Current 

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2500 12<br>VGS   = 0V,       f = 1 MHZ ID= 31A<br>2000 CCiss rss    = C = Cgs gd + Cgd,  C ds SHORTED 10 VVDS= 28VDS= 44V<br>Coss  = Cds + Cgd VDS= 11V<br>Ciss 8<br>1500<br>FE T | C K<br>6<br>1000<br>C T TM = 4 pA<br>500 2<br>SO Coss IT | 7 =<br>Crss<br>SE ee 0 Co<br>0<br>0 10 20 30 40 50<br>1 10 100<br> QG  Total Gate Charge (nC)<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>1000.0 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100.0 100<br>TJ = 175°C<br>100µsec<br>10.0 10<br>T = 25°C<br>J<br>1msec<br>1.0 1<br>Tc = 25°C<br>10msec<br>Tj = 175°C<br>VGS = 0V Single Pulse<br>0.1<br>0.1<br>0.2 0.6 1.0 1.4 1.8 1 10 100 1000<br>VDS  , Drain-toSource Voltage (V)<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A) ID,  Drain-to-Source Current (A)<br>C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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60 2.5<br>ID = 30A<br>50 VGS = 5.0V<br>F EEL T TT<br>2.0<br>P ASO Hitt<br>40<br>se Saeeenueeard<br>30 1.5<br>L EPNETT LOE Ar<br>TTTTELE NE EEE<br>20<br>1.0<br>C TT pope<br>10<br>MN LETT TTT<br>0 LEEEEELLELEIN © 0.5 EEE<br>25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Junction Temperature (°C) TJ , Junction Temperature (°C)<br>Fig 9.   Maximum Drain Current Vs. Fig 10.   Normalized On-Resistance<br>Case Temperature Vs. Temperature<br>10<br>1 D  = 0.50<br>0.20<br>0.1 0.100.05 τ J τ J R1 R1 R2 R2 R3R3 τ C τ Ri (°C/W)   0.736       0.000345  τ i (sec)<br>= S 0.020.01 ee τ 1 τ PP 1 τ 2 τ 2 τ 3 τ 3 0.687       0.00147<br>Ci=  τ i / Ri 0.449       0.007058<br>0.01 Ci i / Ri<br>SINGLE PULSE Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>| TE EE ELE ELLE 2. Peak Tj = P dm x Zthjc + Tc<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>ID  , Drain Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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320<br>                 I<br>D<br>TOP          3.7A<br>               5.7A<br>240 Nae BOTTOM   31A<br>160<br>K en<br>N IN<br>80<br>o S<br>0<br>25 50 75 100 125 150 175<br>Starting TJ, Junction Temperature (°C)<br>AN GER<br>Fig 12c.   Maximum Avalanche Energy<br>Vs. Drain Current<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>Zz 20VVGS<br>tp 0.01 Ω<br>[3<br>Fig 12a.   Unclamped Inductive Test Circuit<br>V(BR)DSS<br>tp<br>/ |<br>|<br>IAS 77<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

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QG<br>10V [r] [n,]<br>QGS QGD<br>VG<br>Charge<br>**----- End of picture text -----**<br>


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3.0<br>2.5<br>N EEL<br>ID = 250µA<br>2.0<br>P RS<br>1.5<br>A LLL IW<br>L TTE<br>1.0<br>L<br>VCC<br>| 0.5 SRRRRREEEE<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 13a.** Basic Gate Charge Waveform 

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L<br>VCC<br>DUT<br>0 A |<br>1K<br>**----- End of picture text -----**<br>


**Fig 13b.** Gate Charge Test Circuit 6 

**Fig 14.** Threshold Voltage Vs. Temperature 

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1000<br>Duty Cycle = Single Pulse<br>100 etee Allowed avalanche Current vs<br>avalanche  pulsewidth,  tav<br>assuming  ∆ Tj = 25°C due to<br>0.01<br>avalanche losses. Note: In no<br>10 case should Tj be allowed to<br>0.05 exceed Tjmax<br>I<br>0.10<br>1<br>y a eo<br>CITED T PR<br>0.1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 15.   Typical Avalanche Current Vs.Pulsewidth<br>100 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>TOP          Single Pulse                 (For further info, see AN-1005 at www.irf.com)<br>BOTTOM   1% Duty Cycle 1. Avalanche failures assumption:<br>80 ID = 31A   Purely a thermal phenomenon and failure occurs at a<br>T T     temperature far in excess of Tjmax. This is validated for<br>    every part type.<br>2. Safe operation in Avalanche is allowed as long asTjmax is<br>60   not exceeded.<br>3. Equation below based on circuit and waveforms shown in<br>S O<br>  Figures 12a, 12b.<br>40 4. PD (ave) = Average power dissipation per single<br>    avalanche pulse.<br>A SS 5. BV = Rated breakdown voltage (1.3 factor accounts for<br>    voltage increase during avalanche).<br>20<br>6. Iav = Allowable avalanche current.<br>n O 7.  ∆ T = Allowable rise in junction temperature, not to exceed<br>OEE SSR     Tjmax (assumed as 25°C in Figure 15, 16).<br>0   tav = Average time in avalanche.<br>25 50 75 100 125 150 175   D = Duty cycle in avalanche =  tav ·f<br>Starting TJ , Junction Temperature (°C)   ZthJC(D, tav) = Transient thermal resistance, see figure 11)<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 16.** Maximum Avalanche Energy Vs. Temperature 

**PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2 T/ [1.3·BV·Zth]** 

- **EAS (AR) = PD (ave)·tav** 

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Driver Gate Drive<br>P.W.<br>D.U.T + {+ P.W. Period ——— — D = —— Period<br>) [©)]    •  Circuit Layout Considerations | t V | GS=10V<br> •<br>| =] - GroundLow StrayPla I n eductance<br> •   CurrentLow LeakageTransformerInductance 2) D.U.T. ISD Waveform<br>+<br>Reverse<br>® - a 38 - ® + RecoveryCurrent r Body Diode ForwardCurrent di/dt /v—<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘<br>00 _ VDD<br>ma<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( 4) •   di/dt controlled by Rg Vop -<br>•<br>D.U.T. - Device Under Test SO<br>Isp controlled by Duty Factor "D" ® t Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


## **Fig 17.** 

## for N-Channel 

## HEXFET ® Power MOSFETs 

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-<br>≤ 1  ys<br>≤ 0.1 %<br>**----- End of picture text -----**<br>


**Fig 18a.** Switching Time Test Circuit 

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VDS<br>90%<br>10%<br>VGS | |<br>lee >! able<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 18b.** Switching Time Waveforms 

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EXAMPLE: THIS IS AN IRF1010<br>LOT CODE 1789 INTERNATIONAL PART NUMBER<br>ASSEMBLED ON WW 19, 1997 RECTIFIER IRF1010<br>IN THE ASSEMBLY LINE "C" LOGO IeaR 719C<br>17 89 DATE CODE<br>YEAR 7 =  1997<br>Note: "P" inassembly line position ASSEMBLY<br>indicates "Lead - Free" LOT CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>


TO-220AB packages are not recommended for Surface Mount Application. 

## **Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

www.irf.com 

9 

**==> picture [228 x 144] intentionally omitted <==**

**----- Start of picture text -----**<br>
THIS IS AN IRF530S WITH PART NUMBER<br>LOT CODE 8024 INTERNATIONAL SS<br>ASSEMBLED ON WW 02, 2000 RECTIFIER F530S<br>IN THE ASSEMBLY LINE "L" LOGO IeaR 002.<br>80 24 DATE CODE<br>YEAR 0 =  2000<br>ASSEMBLY<br>assembly"Lead line- Free”position LOT CODE tOU U WEEK 02LINE L<br>OR<br>PART NUMBER<br>INTERNATIONAL a<br>RECTIFIER F530S<br>LOGO TeaR P0024 DATE CODE<br>80 24 P =  DESIGNATES LEAD - FREE<br>PRODUCT (OPTIONAL)<br>ASSEMBLYLOT CODE YbUe uAeU YEAR 0 =  2000WEEK 02<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


## **Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

www.irf.com 

10 

## TO-262 Package Outline 

## TO-262 Part Marking Information 

**==> picture [228 x 156] intentionally omitted <==**

**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRL3103L<br>LOT CODE 1789 PART NUMBER<br>ASSEMBLED ON WW 19, 1997IN THE ASSEMBLY LINE "C" INTERNATIONALRECTIFIERLOGO cSTeoR1789IRL3103L719¢ DATE CODE<br>Note: “P”indicatesin assembly"Lead line- Free”position ASSEMBLYLOT CODE YEAR 7 =  1997WEEK 19<br>LINE C<br>OR<br>PART NUMBER<br>INTERNATIONAL cS<br>RECTIFIER IRL3103L<br>LOGO TOR1789P7194. DATE CODE<br>ASSEMBLY P =  DESIGNATES LEAD-FREE<br>LOT CODE PRODUCT (OPTIONAL)<br>YEAR 7 =  1997<br>WEEK 19<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


## **Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** www.irf.com 

11 

## IRLZ44Z/S/LPbF 

## D[2] Pak Tape & Reel Infomation 

**==> picture [251 x 257] intentionally omitted <==**

**----- Start of picture text -----**<br>
TRR<br>1.60 (.063)<br>1.50 (.059)<br>4.10 (.161)3.90 (.153) 1.60 (.063)1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>— 1.65 (.065) Tsay 11.40 (.449) 15.42 (.609)15.22 (.601) E44 24.30 (.957)23.90 (.941)<br>TRL aise<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>FEED DIRECTION<br>13.50 (.532) 27.40 (1.079)<br>; 12.80 (.504) 23.90 (.941) — 4 IP<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>| F<br>30.40 (1.197)<br>NOTES : OC iL       MAX.<br>1.   COMFORMS TO EIA-418.2.   CONTROLLING DIMENSION: MILLIMETER.3.   DIMENSION MEASURED @ HUB.4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039)24.40 (.961)3 IL 4<br>**----- End of picture text -----**<br>


Notes: ®© Repetitive rating;  pulse width limited by Limited by TJmaxJmax , see Fig.12a, 12b, 15, 16 for typical repetitive 

Limited by TJmaxJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. 

max. junction temperature. (See fig. 11). @ Limited by TJmax, starting TJ = 25°C, L = 0.166mH © RG = 25 Ω , IAS = 31A, VGS =10V. Part not recommended for use above this value. ° Pulse width ≤ 1.0ms; duty cycle ≤ 2%. ® Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . 

© This value determined from sample failure population. 100% tested to this value in production. 

This is only applied to TO-220AB pakcage. 

This is applied to D[2] Pak, when mounted on 1" square PCB (FR4 or G-10 Material).  For recommended footprint and soldering techniques refer to application note #AN-994. 

θ 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. International 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 10/2010 

www.irf.com 

12 



## Links

- [View this product on Novapart](https://novapart.co/products/IRLZ44ZSTRLPBF/power-mosfet-n-channel-55-v-51-a-00135-ohm-to-263)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irlz44zstrlpbf/mosfet-n-ch-55v-51a-to-263/dp/2777392)
---

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