# Power MOSFET, N Channel, 55 V, 18 A, 0.06 ohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2726032/)

**URL**: https://novapart.co/products/IRLZ24NSTRLPBF/power-mosfet-n-channel-55-v-18-a-006-ohm-to-263
**SKU**: IRLZ24NSTRLPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3660
**Stock**: 200+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.06ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power D

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (17-Jan-2023) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 45W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 18A |
| Drain Source On State Resistance | 0.06ohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2726032/)

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D Voss = 55V<br>R 0.06 Ω<br>DS(on) ~ ©:<br>G<br>IDpD=18A<br>S<br>**----- End of picture text -----**<br>


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   D   Pak2  TO-262<br>**----- End of picture text -----**<br>


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θ<br>[Ric<br>θ<br>www.irf.com<br>**----- End of picture text -----**<br>


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∆ ∆<br>| -—- | —— |0.060 V/°C| VesReference [=] [10V,]<br>Rpsion) Static Drain-to-Source On-Resistance | —- |_—| 0.075 Ω Vas = 5.0V,<br>| -—— | —- [0.105 Ves = 4.0V,<br>Gate Threshold Voltage | 1.0 |—-]|20 | V | Vps= Vas,<br>Forward Transconductance | 83 |—-|-—<br>Drain-to-Srain-to-Source Leakace Current | [-—-] | —-| 25 | S$a || Vos == 2558 V,<br>Leakage Curren F— | —| 250 H Vos = 44V,<br>loss Gate-to-Sate-to-Source FForwardd LeakageLeak | —- | —-| 100 nA Vescs = 16V<br>_| TotalGate-to-SourceGate ChargeReverse Leakage | —- | ---|—-| - 1 005 VesIp =11A= -16V<br>|Qgs_———«| | Gatte-to-Source Gate-to-Drain ("Miller") Charge Charge | | —- —- |---| | -—| 3.785 | nC | V pe s =  44v5.0 V<br>| RiseTimeTurn-On Delay Time | | -—-|| 7.14 || VppIn = 114= 28V<br>Ω,<br>Turn-Off Delay Time | — | 20 | Re=12<br>Ω,<br>**----- End of picture text -----**<br>


@ Vpp = 25V, starting Ty = 25°C, L = 790pH Ω 

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48 MOSFET symbol D<br>A showing the<br>7 integral reverse G<br>p-n junction diode. S<br>|—-[|—-|1.3] V [T= 25°C, Is=11A, Ves = OV ®<br>—-| 60 | 90 | ns | Ty=25°C, Ip=11A<br>——[ 130] 200 | nC | di/dt = 100A/ys ©©<br>Intrinsic turn-on time is negligible (turn-on is dominated by Ls+Lp)<br>@ ISD ≤ 11A, di/dt ≤ 290A/Us, Vpp ≤ Verypss;<br>Ty ≤ 175°C<br>@ Pulse width ≤  300us; duty cycle  ≤ 2%.<br>**----- End of picture text -----**<br>


Uses IRLZ24N data and test conditions 

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100                    VGS 100                    VGS<br> TOP           15V  TOP           15V<br>                   12V                    12V<br>                   10V                    10V<br>                   8.0V                    8.0V<br>                   6.0V                    6.0V<br>                   4.0V                    4.0V<br>                   3.0V                    3.0V<br> BOTTOM   2.5V a a  BOTTOM   2.5V TD At<br>10 | 10<br>|ffs a<br>et ara oy 74 a 2.5V<br>1 1<br>CC EI V poetic eel<br>2.5V<br>c e t Cates eee elise<br> 20µs PULSE WIDTH  20µs PULSE WIDTH<br>0.1 “AGT= alll G v  T   = 25°CJ w A 0.1 SnPLU  T   = 175°CJ<br>0.1 1 10 100 0.1 1 10 100<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics<br>100 3.0<br>I    = 18AD<br>po] yf T  = 25°CJ =.<br>Pp | | | | |ht e ee ee 2.5<br>| T  = 175°CJ tt<br>10 P| ALA te 2.0 OEP E OE TE OE OO<br>SA ea<br>se ee 1.5 PE Ee<br>Ey, eee ee ee eee yy a<br>2 Soe PLEeed<br>1 1.0<br>F/itneeeeeeeeeeee BERR EEES DS cd GEER EEEREEEE<br>fly te tet tt tert<br>Seppp} ypeesyp ep oe ee ee 0.5 Te<br> V     = 15VDS<br>0.1 ett(Ae  20µs PULSE WIDTH A 0.0 eePE  V      = 10VGS<br>2 3 4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>V     , Gate-to-Source Voltage (V)GS T   , Junction Temperature (°C)J<br>I   , Drain-to-Source Current (A)D I   , Drain-to-Source Current (A)D<br>(Normalized)<br>D<br>I   , Drain-to-Source Current (A)<br>DS(on)<br>R           ,  Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


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800 15<br>V      = 0V,         f = 1MHzGS I    = 11AD<br>600 c Ciss SCO C      = C     + C     ,   C     SHORTEDC      = CC      = C     + C ee iss         gs         gd         dsrss         gdoss        ds         gd L]i 12 E ptEE V      = 44VV      = 28VDSDS Nae<br>9<br>EE ee pt<br>400 Coss<br>0 a ee 6 ee<br>|| pi | | OA |<br>200 Ss rl,<br>en Crss ee 3 Ae<br>SUISSE<br> FOR TEST CIRCUIT<br>0 eelSES]  lll A 0 GEESAnne     SEE FIGURE 13<br>1 10 100 0 4 8 12 16 20<br>V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)G<br>C, Capacitance (pF)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


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100 ee re ee res<br>Aex<br>| A<br>7 or<br>T  = 175°CJ<br>T  = 25°CJ<br>10<br>2 Eee<br>[><br>oe{|<br>1 Pie| r} V      = 0VGS<br>0.4 0.8 1.2 1.6 2.0<br>V     , Source-to-Drain Voltage (V)SD<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


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1000<br>=a  OPERATION IN THIS AREA LIMITED EALsel<br>                       BY RDS(on)<br>= dy7 at<br>|<br>100 0 ell<br>a aa Sl Ne 10µs<br>a eee mall<br>10 SSSs S ie 100µs<br>T     = 25°CC 1ms<br>T     = 175°CJ<br>PSSLe  Single Pulse O00 s ScN S 10ms<br>1<br>1 10 100<br>V     , Drain-to-Source Voltage (V)DS<br>I   , Drain Current (A)D<br>**----- End of picture text -----**<br>


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20 TTT Vos)<br>16 PN} Vos bur<br>CPST re | ;<br>12 PPP<br> 1<br>pt EN conan ≤ 0.1 %<br>8<br>4 potST tT ET IN aFig VDS  10a. nenSwitching Time Test Circuit<br>90%<br>Pf tN [<br>0 A<br>25 50 75 100 125 150 175<br>T  , Case Temperature (°C)C<br>ptt 10% \ OV<br>Fig 9. Maximum Drain Current Vs. VGS t |woes d(on) tr eee td(off) ome tf<br>Case Temperature<br>Fig 10b. Switching Time Waveforms<br>10<br>a D = 0.50 |{{{}} __|__} e ee i amEmRAilll<br>1 a eee a_ aad<br>0.20<br>0.10<br>S e<br>0.05<br>ee 0.02 ee a ee eee) ee PDM<br>0.01<br>0.1<br>om       SINGLE PULSE e|| t1<br>e (THERMAL RESPONSE) a t 2<br>es ee<br>a ee Notes:<br>a ee eelee eee 1. Duty factor D =  t   / t 1 2<br>0.01 a ee ll 2. Peak T  = P      x Z         + TJ DM thJC C A<br>0.00001 0.0001 0.001 0.01 0.1 1<br>t   , Rectangular Pulse Duration (sec)1<br>I  , Drain Current (Amps)D<br>thJC<br>Thermal Response (Z       )<br>**----- End of picture text -----**<br>


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QG<br>O T<br>A QGS QGD<br>VG<br>< aha —><br>Charge<br>**----- End of picture text -----**<br>


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140<br>                    I D<br>120 PottNee| ET TOP            4.5A                   7.8A<br>BOTTOM    11A<br>PN [ft]<br>100<br>PAP | tt<br>Pi NTfTtT | PTtt tt tt<br>80<br>NENEE<br>EAE AEE<br>60<br>NNN<br>PNA<br>40<br>HSNO<br>pf NN<br>20 Pit |eT|SANOSS<br> V      = 25VDD<br>0 ae ee... ~S<br>25 50 75 100 125 150 175<br>Starting T  , Junction Temperature (°C)J<br>AS<br>E     ,   Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>: .3µF iE<br>LE jt +<br>D.U.T. -VDS<br>VGS<br>(x<br>3mA<br>VAN IG t [WN] ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


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D.U.T + Circuit Layout Considerations<br>_    •  Low Stray Inductance<br>@ •  Ground Plane<br> •   Low Leakage Inductance<br>| I - Current Transformer<br>+<br>- - +<br>(0<br>®<br>Re •   dv/dt controlled by Rg +<br>•   Driver same type as D.U.T. -<br>•<br>•   D.U.T. - Device Under Test<br>(1) Isp controlled by Duty Factor "D"<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. Period<br>——| 7<br>t<br>VGS=10V<br>t<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current "| Current di/dt a<br>©) D.U.T. VDS Waveform Diode Recovery<br>dv/dt<br>VDD<br>ma<br>Re-Applied<br>Voltage Body Diode  __ Forward Drop a<br>® Inductor Curent UW<br>Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


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## Dimensions are shown in millimeters (inches) 

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T HIS  IS  AN IRF530S  WITH PART NUMBER<br>LOT CODE 8024ASS EMBLED ON WW 02, 2000 INTERNATIONALRECTIFIER a F530S |<br>IN THE AS S EMBLY LINE "L" LOGO TOR 002.<br>position indicates "Lead-Free"Note: "P" in assembly line AS S EMBLYLOT  CODE 80 WUGGuO 24 DATE CODEYEAR 0 =WEEK 02LINE L  2000<br>**----- End of picture text -----**<br>


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PART  NUMBE R<br>INTE RNAT IONAL |<br>RE CT IFIER F530S<br>LOGO Te9RPOO2A<br>80 24 DATE  CODE<br>P =  DE SIGNAT ES LEAD-FREE<br>ASSE MBLYLOT  CODE JG H o H U YEAR 0 =  2000PRODUCT  (OPT IONAL)<br>WEEK 02<br>A =  ASS EMBLY SIT E CODE<br>**----- End of picture text -----**<br>


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## TO-262 Package Outline 

## Dimensions are shown in millimeters (inches) 

## TO-262 Part Marking Information 

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EXAMPLE: THIS  IS  AN IRL3103L<br>LOT CODE 1789 PART NUMBER<br>IN THE AS S EMBLY LINE "C"AS S E MBLED ON WW 19, 1997 INTERNATIONALRECTIFIERLOGO ———IeaRIRL3103L719C<br>Note: "P" in assembly line 17 89 DAT E CODE<br>position indicates "Lead-Free" AS S EMBLY YE AR 7 =  1997<br>LOT CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>


## OR 

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PART NUMBER<br>INTERNATIONAL —<br>RECTIFIER IRL3103L<br>LOGO TeaRP7igA<br>DATE CODE<br>17 89<br>P =  DES IGNATE S  LEAD-FREE<br>AS S EMBLY PRODUCT  (OPTIONAL)<br>LOT CODE YEAR 7 =  1997<br>WEE K 19<br>A =  AS S EMBLY S ITE CODE<br>**----- End of picture text -----**<br>


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Dimensions are shown in millimeters (inches) 

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TRR<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)3.90 (.153) 1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>(a If J ' aa<br>———————<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 24.30 (.957)<br>15.42 (.609)<br>23.90 (.941)<br>15.22 (.601)<br>TRL ] [| °com -|<br>0000 [ i 1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>FEED DIRECTION<br>**----- End of picture text -----**<br>


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13.50 (.532) 27.40 (1.079)<br>: 12.80 (.504) 23.90 (.941) or<br>4<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>| F<br>30.40 (1.197)<br>NOTES : oO a       MAX.<br>1.   COMFORMS TO EIA-418.2.   CONTROLLING DIMENSION: MILLIMETER. 26.40 (1.039)24.40 (.961) It 4<br>3.   DIMENSION MEASURED @ HUB.<br>3<br>**----- End of picture text -----**<br>


4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 

Data and specifications subject to change without notice. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 07/04 

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Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



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---

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