# Power MOSFET, N Channel, 25 V, 42 A, 4.8 ohm, TO-251AA, Through Hole
**URL**: https://novapart.co/products/IRLU8713PBF/power-mosfet-n-channel-25-v-42-a-48-ohm-to-251aa
**SKU**: IRLU8713PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: โฌ0.5720
**Stock**: 10+
## Description
Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:25V; On Resistance Rds(on):4.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.85V; Power Dissipat
## Specifications
| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 81W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-251AA |
| Drain Source Voltage Vds | 25V |
| Operating Temperature Max | 175ยฐC |
| Continuous Drain Current Id | 42A |
| Drain Source On State Resistance | 4.8ohm |
| Gate Source Threshold Voltage Max | 1.85V |
## Datasheet
๐ [Download PDF](https://novapart.co/datasheet/farnell:1298552/)
## PD - 97067 IRLR8713PbF IRLU8713PbF
## **Applications**
High Frequency Synchronous Buck Converters for Computer Processor Power High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use
## **Benefits**
> : Very Low RDS(on) at 4.5V VGS
> ยฐ Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current Lead-Free
HEXFET Power MOSFET
||HEXFET
Power MOSFET
ยฎ|Power MOSFET|
|---|---|---|
|**VDSS**|**RDS(on) max**|**Qg**|
|**25V**|**4.8m**|**17.4nC**|
**==> picture [134 x 86] intentionally omitted <==**
**----- Start of picture text -----**
D D
S
t WS S
D
G D
G
D-Pak I-Pak
IRLR8713PbF IRLU8713PbF
**----- End of picture text -----**
|~~se~~|**Parameter**
~~se~~|**Max.**
~~se~~|**Units**
~~se~~|
|---|---|---|---|
|VDS
~~se~~
~~โ~~|Drain-to-Source Voltage
~~se~~|25
~~se~~
~~โโโ~~|V
~~se~~
~~โโโ~~
~~es~~
|
|VGS
~~โ~~
~~es~~|Gate-to-Source Voltage
~~es~~
|ยฑ 20
~~โโโ~~
~~es~~
||
|ID@ TC= 25ยฐC
~~โ~~
~~es~~
~~โโโโโ~~|Continuous Drain Current, VGS@ 10V
~~es~~
~~nD~~
~~โโโโโ~~|100
~~โโโ~~
~~es~~
~~nD~~
~~oe~~|A
~~โโโ~~
~~es~~
~~nD~~
~~i~~
~~EEE~~|
|ID@ TC= 100ยฐC
~~es~~
~~โโโโโ~~
~~โโโ~~|Continuous Drain Current, VGS@ 10V
~~es~~
~~nD~~
~~โโโโโ~~
~~โโโ~~|72
~~es~~
~~nD~~
~~oe~~
~~EEE~~||
|IDM
~~โโโโโ~~
~~โโโ~~|Pulsed Drain Current
~~โโโโโ~~
~~โโโ~~|410
~~oe~~
~~EEE~~||
|PD@TC= 25ยฐC
~~โโโโโ~~
~~โโโ~~
~~tp~~|Maximum Power Dissipation
~~โโโโโ~~
~~โโโ~~
~~a~~
~~tp~~
~~aa~~|81
~~oe ~~
~~EEE~~
~~a~~
~~aa~~|W
~~i~~
~~EEE~~
~~a~~|
|PD@TC= 100ยฐC
~~โโโ~~
~~tp~~|Maximum Power Dissipation
~~โโโ~~
~~a~~
~~tp~~
~~aa~~|40
~~EEE~~
~~a~~
~~aa~~||
|~~tp~~
~~ee~~
~~EE~~|Linear DeratingFactor
~~tp~~
~~aa~~
~~ee~~
~~EE~~|0.54
~~aa~~
~~ee~~
~~e~~~~**e**~~|W/ยฐC
~~ee~~|
|TJ
TSTG
~~ee~~
~~EE~~|Operating Junction and
Storage Temperature Range
~~ee~~
~~EE~~|-55 to + 175
~~ee~~
~~e~~~~**e**~~
~~e~~|ยฐC
~~ee~~
~~e~~|
|~~ee~~
~~EE~~|SolderingTemperature,for 10 seconds
~~ee~~
~~EE~~|300 (1.6mm fromcase)
~~ee~~
~~e~~~~**e**~~
~~e~~||
## **Thermal Resistance**
|~~es~~|||||
|---|---|---|---|---|
|~~es~~
~~ss~~|**Parameter**
~~ss~~
~~op~~|**Typ.**
~~op~~|**Max.**|**Units**|
|RฮธJC
~~es~~
~~ss~~
~~โโโโ~~|Junction-to-Case
~~ss~~
~~op~~
~~โโโโ~~
~~oe~~|โโโ
~~op~~
~~ee~~|1.86
~~oo~~|ยฐC/W
~~i~~|
|RฮธJA
~~ss~~
~~โโโโ~~
~~es~~|Junction-to-Ambient (PCB Mount)
~~ss~~
~~op~~
~~โโโโ~~
~~oe~~
~~en~~|โโโ
~~op~~
~~ee~~|50
~~oo~~||
|RฮธJA
~~โโโโ~~
~~es~~|Junction-to-Ambient
~~โโโโ~~
~~oe~~
~~en~~|โโโ
~~ee~~|110
~~oo~~||
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1 12/7/05
**Static @ TJ = 25ยฐC (unless otherwise specified)**
|~~es~~
~~es~~|**Parameter**
~~De~~
~~QO~~|**Min.**
~~De~~
~~QO~~|**Typ. **
~~DO~~
~~GO~~|**Max. **
~~DO~~|**Units**
~~DO~~|**Conditions**|
|---|---|---|---|---|---|---|
|BVDSS
~~es~~
~~es~~
~~es~~|Drain-to-Source Breakdown Voltage
~~De~~
~~QO~~
~~es~~|25
~~De~~
~~QO~~
~~es~~
~~GO~~|โโโ
~~DO~~
~~GO~~
~~es~~
~~GO~~|โโโ
~~DO~~
~~es~~
~~GO~~|V
~~DO~~
~~es~~|VGS= 0V,ID= 250ยตA
~~es~~|
|โฮVDSS/โTJ
~~es~~
~~es~~|Breakdown Voltage Temp. Coefficient
~~QO~~
~~es~~|โโโ
~~QO ~~
~~es~~
~~GO~~|16
~~GO~~
~~es~~
~~GO~~|โโโ
~~es~~
~~GO~~
~~EE~~|mV/ยฐC
~~es~~
~~EE~~|Reference to 25ยฐC,ID= 1mA
~~es~~
~~EE~~|
|RDS(on)
~~es~~
~~ee~~|Static Drain-to-Source On-Resistance
~~es~~
~~ee~~|โโโ
~~es~~
~~GO~~
~~ee~~|3.8
~~es~~
~~GO~~
~~ee~~|4.8
~~es~~
~~GO~~
~~ee~~
~~EE~~|mโฆ
~~es~~
~~ee~~
~~EE~~|VGS= 10V,ID= 21A
~~es~~
~~ee~~
~~EE~~|
|||โโโ
~~ee~~
~~Ft~~|5.0
~~ee~~
~~Ft~~|6.3
~~ee~~
~~EE~~
~~Ft~~||VGS= 4.5V,ID= 17A
~~ee~~
~~EE~~|
|VGS(th)
~~Se~~
~~ee~~|Gate Threshold Voltage
~~Se~~|1.35|1.85|2.35
~~EE~~|V
~~EE~~|VDS= VGS, ID= 50ยตA
~~EE~~
~~EE~~|
|โVGS(th)/โTJ
~~ee~~
~~a~~|Gate Threshold Voltage Coefficient|โโโ|-7.0|โโโ
~~EE~~|mV/ยฐC
~~EE~~||
|IDSS
~~ee~~
~~a~~
~~โโโโโโโโโโโโโโโ_โโโโeE~~|Drain-to-Source Leakage Current
~~โโโโโโโโโโโโโโโ_โโโโeE~~|โโโ|โโโ|1.0
~~EE~~|ยตA
~~EE~~
~~โโโโโโโโโโโโโโโ_โโโโeE~~|VDS= 20V,VGS= 0V
~~EE~~|
|||โโโ
~~Ft~~
~~โโโโโโโโโโโโโโโ_โโโโeE~~|โโโ
~~Ft~~
~~โโโโโโโโโโโโโโโ_โโโโeE~~|150
~~EE~~
~~Ft ~~
~~โโโโโโโโโโโโโโโ_โโโโeE~~||VDS= 20V,VGS= 0V,TJ= 125ยฐC
~~EE~~
~~Po~~
~~โโโโโโโโโโโโโโโ_โโโโeE~~|
|IGSS
~~a~~
~~โโโโโโโโโโโโโโโ_โโโโeE~~
~~es~~
~~ee~~|Gate-to-Source Forward Leakage
~~โโโโโโโโโโโโโโโ_โโโโeE~~
~~**e**s~~|โโโ
~~โโโโโโโโโโโโโโโ_โโโโeE~~|โโโ
~~โโโโโโโโโโโโโโโ_โโโโeE~~|100
~~EE~~
~~โโโโโโโโโโโโโโโ_โโโโeE~~|nA
~~EE~~
~~โโโโโโโโโโโโโโโ_โโโโeE~~|VGS= 20V
~~EE~~
~~โโโโโโโโโโโโโโโ_โโโโeE~~
~~po~~|
||Gate-to-Source Reverse Leakage
~~โโโโโโโโโโโโโโโ_โโโโeE~~
~~**e**s~~
|โโโ
~~โโโโโโโโโโโโโโโ_โโโโeE~~
~~GO~~
|โโโ
~~โโโโโโโโโโโโโโโ_โโโโeE~~
~~GO~~
|-100
~~โโโโโโโโโโโโโโโ_โโโโeE~~
~~GO~~
||VGS= -20V
~~โโโโโโโโโโโโโโโ_โโโโeE~~
~~po~~|
|gfs
~~โโโโโโโโโโโโโโโ_โโโโeE~~
~~es~~
~~ee~~|Forward Transconductance
~~โโโโโโโโโโโโโโโ_โโโโeE~~
~~**e**s~~
|79
~~โโโโโโโโโโโโโโโ_โโโโeE~~
~~GO~~
|โโโ
~~โโโโโโโโโโโโโโโ_โโโโeE~~
~~s~~
~~GO~~
|โโโ
~~โโโโโโโโโโโโโโโ_โโโโeE~~
~~s~~
~~GO~~
|S
~~โโโโโโโโโโโโโโโ_โโโโeE~~
~~s~~|VDS= 13V,ID= 17A
~~โโโโโโโโโโโโโโโ_โโโโeE~~
~~po~~
~~s~~|
|Qg
~~es~~
~~ee~~
~~ee~~|Total Gate Charge
~~**e**s~~
~~es~~
|โโโ
~~GO~~
~~es~~
|17.4
~~GO~~
~~es~~
|26
~~GO~~
~~es~~
|nC
|See Fig.16
VDS= 13V
VGS= 4.5V
ID= 17A
~~po~~
|
|Qgs1
~~ee~~
~~ee~~
~~ee~~|Pre-Vth Gate-to-Source Charge
~~es~~
~~es~~
|โโโ
~~GO~~
~~es~~
~~es~~
|4.0
~~GO~~
~~es~~
~~es~~
|โโโ
~~GO~~
~~es~~
~~es~~
|||
|Qgs2
~~ee~~
~~ee~~
~~ee~~|Post-Vth Gate-to-Source Charge
~~es~~
~~es~~
~~es~~
|โโโ
~~es~~
~~es~~
~~es~~
|2.2
~~es~~
~~es~~
~~es~~
|โโโ
~~es~~
~~es~~
~~es~~
|||
|Qgd
~~ee~~
~~ee~~
~~ee~~|Gate-to-Drain Charge
~~es~~
~~es~~
~~es~~
|โโโ
~~es~~
~~es~~
~~es~~
|5.8
~~es~~
~~es~~
~~es~~
|โโโ
~~es~~
~~es~~
~~es~~
|||
|Qgodr
~~ee~~
~~ee~~
~~ee~~|Gate Charge Overdrive
~~es~~
~~es~~
~~es~~
|โโโ
~~es~~
~~es~~
~~es~~
|5.4
~~es~~
~~es~~
~~es~~
|โโโ
~~es~~
~~es~~
~~es~~
|||
|Qsw
~~ee~~
~~ee~~
~~es~~
~~es~~|Switch Charge(Qgs2+ Qgd)
~~es~~
~~es~~
~~**e**s~~
|โโโ
~~es~~
~~es~~
~~s~~
~~GO~~
|8.0
~~es~~
~~es~~
~~s~~
~~GO~~
|โโโ
~~es~~
~~es~~
~~s~~
~~GO~~
|||
|Qoss
~~ee~~
~~es~~
~~es~~
~~ee~~|Output Charge
~~es~~
~~**e**s~~
|โโโ
~~es~~
~~s~~
~~GO~~
~~GO~~|8.6
~~es~~
~~s~~
~~s~~
~~GO~~
~~GO~~|โโโ
~~es~~
~~s~~
~~s~~
~~GO~~
~~GO~~|nC
~~s~~
|VDS= 10V,VGS= 0V
~~s~~
|
|RG
~~es~~
~~es~~
~~ee~~
~~ee~~|Gate Resistance
~~**e**s~~
~~es~~
~~es~~
|โโโ
~~s~~
~~GO~~
~~es~~
~~GO~~
|0.9
~~s~~
~~GO~~
~~es~~
~~GO~~
|1.6
~~s~~
~~GO~~
~~es~~
~~GO~~
|โฆ
~~es~~|~~es~~
ยฎ|
|td(on)
~~es~~
~~ee~~
~~ee~~|Turn-On DelayTime
~~es~~
|โโโ
~~GO~~
~~GO~~
|14
~~GO~~
~~GO~~
|โโโ
~~GO~~
~~GO~~
|ns
|ID= 17A
VDD= 13V, VGS= 4.5V
Clamped Inductive Load
ยฎ|
|tr
~~ee ~~
~~ee~~
~~ee~~|Rise Time
~~es~~
~~es~~
|โโโ
~~GO~~
~~es~~
|24
~~GO~~
~~es~~
|โโโ
~~GO~~
~~es~~
|||
|td(off)
~~ee~~
~~ee~~
~~ee~~|Turn-Off DelayTime
~~es~~
~~es~~
~~es~~
|โโโ
~~es~~
~~es~~
|12
~~es~~
~~es~~
|โโโ
~~es~~
~~es~~
|||
|tf
~~ee~~
~~ee~~
~~ee~~|Fall Time
~~es~~
~~es~~
~~es~~
|โโโ
~~es~~
~~es~~
~~es~~
|5.9
~~es~~
~~es~~
~~es~~
|โโโ
~~es~~
~~es~~
~~es~~
|||
|Ciss
~~ee~~
~~ee~~
~~ee~~|Input Capacitance
~~es~~
~~es~~
~~**es**~~|โโโ
~~es~~
~~es~~
~~**es**~~|2240
~~es~~
~~es~~
~~**es**~~|โโโ
~~es~~
~~es~~
~~**es**~~|pF|ฦ= 1.0MHz
VGS= 0V
VDS= 13V|
|Coss
~~ee~~
~~ee~~|Output Capacitance
~~es~~
~~**es**~~|โโโ
~~es~~
~~**es**~~|580
~~es~~
~~**es**~~|โโโ
~~es~~
~~**es**~~|||
|Crss
~~ee~~
~~a~~|Reverse Transfer Capacitance
~~**es**~~|โโโ
~~**es**~~|270
~~**es**~~|โโโ
~~**es**~~|||
**==> picture [439 x 483] intentionally omitted <==**
**----- Start of picture text -----**
1000 1000
VGS VGS
TOP 10V TOP 10V
5.0V 5.0V
4.5V 4.5V
i) aa 3.7V al 3.7V
100 3.5V 3.5V
3.0V 3.0V
2.7V 100 2.7V
BOTTOM 2.5V BOTTOM 2.5V
10
AT jp
acne een Gs i
Gt Seal zee 10 Pec
1 2.5V
2.5V โค 60ยตs PULSE WIDTH โค 60ยตs PULSE WIDTH
Tj = 25ยฐC Tj = 175ยฐC
rll |
0.1 1
0.1 See 1 laattt 10 100 0.1 ill 1 m 10 100
VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
1000 2.0
ID = 42A
Pt tt fe VGS = 10V LEE
100
TJ = 175ยฐC
cee 1.5 HT VA
a Le
10 | | | Yfl | | |
ee ee oe oeeee
TJ = 25ยฐC
1.0
1
fei
VDS = 15V | be
โค 60ยตs PULSE WIDTH
tf
0.1
een f
0.5
1.0 2.0 3.0 4.0 5.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (ยฐC)
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
**----- End of picture text -----**
**Fig 3.** Typical Transfer Characteristics
**Fig 4.** Normalized On-Resistance Vs. Temperature
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3
**==> picture [438 x 495] intentionally omitted <==**
**----- Start of picture text -----**
10000 12
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED ID= 17A VDS= 21V
Crss = Cgd 10 VDS= 13V
T Coss = Cds + Cgd
Ciss 8
| fy
1000 Baiitiinalllll 6 _ Via
ee
Coss
4
TE Crss PH 2 ae
0
100
Fri til) = 0 = 10 20 30 40
1 10 100
VDS, Drain-to-Source Voltage (V) Qg, Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage Gate-to-Source Voltage
1000 10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1000
100 TJ = 175ยฐC
100ยตsec
100
1m s ec
es 10 | eT Saati a g a
ae ee
TJ = 25ยฐC 10
10ms e c
1
1
Tc = 25ยฐC
Tj = 175ยฐC
VGS = 0V Single Pulse
pf ipe "Se
0.1 fp; | 0.1 iii
0.2 0.6 1.0 1.4 1.8 2.2 0.1 1 10 100
VSD, Source-to-Drain Voltage (V) VDS, Drain-toSource Voltage (V)
ISD, Reverse Drain Current (A)
C, Capacitance (pF)
VGS, Gate-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
**----- End of picture text -----**
**Fig 7.** Typical Source-Drain Diode Forward Voltage
**Fig 8.** Maximum Safe Operating Area
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4
**==> picture [439 x 486] intentionally omitted <==**
**----- Start of picture text -----**
100 2.4
LIMITED BY PACKAGE
2.2
P oo CITE EEL
80 2.0
CCPSCEEEEE
1.8
ai CSR
60 ID = 50ยตA
1.6
| | te : 1.4 POPSCOPE NTE
40
1.2
20 TTT 1.0 COPE NEE
0.8
0 TTT TN occCEEECCECEEEECCeeN ENE
0.6
25 50 75 100 125 150 175
-75 -50 -25 0 25 50 75 100 125 150 175
TC , Case Temperature (ยฐC)
TJ, Temperature ( ยฐC )
Fig 9. Maximum Drain Current Vs. Fig 10. Threshold Voltage Vs. Temperature
Case Temperature
10
PETE
1 D = 0.50 mr TTT
a A EH EEE
0.20
r BS a
0.10
0.1 0.05 R1 R1 R2 R2 R3R3 Ri (ยฐC/W) ฯฮน (sec)
0.02 ฯJ ฯJ ฯCฯ 0.382809 0.000148
0.01 ฯ1 ฯ1 ฯ2 ฯ2 ฯ3ฯ3 0.927748 0.0013
0.01 Ci= Ci= ฯi/ ฯ Ri i/Ri 0.550944 0.009343
SINGLE PULSE Notes:
( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Fiat it a
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
VGS(th) Gate threshold Voltage (V)
ID , Drain Current (A)
Thermal Response ( Z thJC )
**----- End of picture text -----**
**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
**==> picture [439 x 359] intentionally omitted <==**
**----- Start of picture text -----**
16 800
ID = 21A I D
TOP 7.1A
9.2A
12 600 BOTTOM 17A
fof
8 400
TJ = 125ยฐC
4
200
ASE TJ = 25ยฐC NT
0 ee oe
0
2.0 4.0 6.0 8.0 10.0
25 50 75 100 125 150 175
VGS, Gate-to-Source Voltage (V)
Starting TJ, Junction Temperature (ยฐC)
Fig 12. On-Resistance vs. Gate Voltage Fig 13. Maximum Avalanche Energy
vs. Drain Current
V(BR)DSS(BR)DSS
15V
tp
VDS L DRIVER
RG D.U.T +
- [V][DD]
IAS A
20VVGS
tp 0.01โฆ
dL
)โฆ
RDS(on), Drain-to -Source On Resistance (m EAS, Single Pulse Avalanche Energy (mJ)
**----- End of picture text -----**
**==> picture [170 x 121] intentionally omitted <==**
**----- Start of picture text -----**
V(BR)DSS(BR)DSS
tp
IAS
dL
**----- End of picture text -----**
**Fig 14a.** Unclamped Inductive Test Circuit
**Fig 14b.** Unclamped Inductive Waveforms
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LD
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VDS
a
+
VDD -
D.U.T
VGS
Pulse Width < 1ยตs
Duty Factor < 0.1%
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**Fig 15a.** Switching Time Test Circuit
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V
DS โ
90%
10%
V
GS
td(on) tr td(off) tf
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**Fig 15b.** Switching Time Waveforms
www.irf.com
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a SameCurrentTypeRegulatoras D.U.T.
50Kโฆ
12V .2ยตF
.3ยตF
+
D.U.T. -VDS
aLL |i |
VGS
3mA EL
ANN
IG ID
Current Sampling Resistors
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Id
Vds
Vgs
!
1
N
Vgs(th)
f+โ : !
โ p i e p i g pg > !
Qgs1 Qgs2 Qgd Qgodr
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## **Fig 16a.** Gate Charge Test Circuit
## **Fig 16b.** Gate Charge Waveform
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Driver Gate Drive
P.W.
D.U.T + {+ P.W. Period โ โ D = โโ Period
) [ยฎ@] โข Circuit Layout Considerations t V t GS=10V
โข
| โโ| - LowGround Stray Pla I n eductance
โข Low Leakage Inductance @ D.U.T. ISD Waveform
+
Reverse
Recovery Body Diode Forward
oH - [1] Current Transformer - ยฎ + Current r Current di/dt NN
ยฎ D.U.T. VDS Waveform Diode Recoverydv/dt โ
00 = VDD
ms
โข Re-Applied
โข Driver same type as D.U.T. + Voltage Body Diode Forward Drop
Rg c c โข dv/dt controlled by Rg Vpp - Inductor Curent
โข
D.U.T. - Device Under Test es ee
Ripple โค 5% ISD
Qโ Isp controlled by Duty Factor"D" ยฎ
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## **Fig 17.**
## Recovery dv/dt Test Circuit for N-Channel HEXFET ยฎ Power MOSFETs
www.irf.com
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**----- Start of picture text -----**
EXAMPLE: THIS IS AN IRFR120
WITH ASSEMBLY INTERNATIONAL PART NUMBER
LOT CODE 1234 RECTIFIER IRFR120 7 DATE CODE
ASSEMBLED ON WW 16, 1999 LOGO 916A YEAR 9 = 1999
IN THE ASSEMBLY LINE "A" 12 34 WEEK 16
Note: "P" in assembly line ASSEMBLY =| LINE A
position indicates "Lead-Free" LOT CODE
OR INTERNATIONALRECTIFIER Ne . CNY IRFR120 a4 PART NUMBERDATE CODE
LOGO P916A P = DESIGNATES LEAD-FREE
12 34 PRODUCT (OPTIONAL)
ASSEMBLY ~YO | im YEAR 9 = 1999WEEK 16
LOT CODE A = ASSEMBLY SITE CODE
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www.irf.com
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**==> picture [293 x 138] intentionally omitted <==**
**----- Start of picture text -----**
EXAMPLE: THIS IS AN IRFU120 PART NUMBER
WITH ASSEMBLYLOT CODE 5678ASSEMBLED ON WW 19, 1999 INTERNATIONALRECTIFIERLOGO \: 56IRFU120919A78 a DATE CODEYEAR 9 = 1999WEEK 19
IN THE ASSEMBLY LINE "A"
Note: position indicates "Lead-Free" "P" in assembly line ASSEMBLYLOT CODE aโ x () | 4) - LINE A
OR a INTERNATIONAL ey an Uey PART NUMBER
RECTIFIER \ IRFU120 - DATE CODE
LOGO IeaR Pgigd P = DESIGNATES LEAD-FREE
56 78 PRODUCT (OPTIONAL)
a YEAR 9 = 1999
ASSEMBLY WEEK 19
LOT CODE A = ASSEMBLY SITE CODE
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**----- Start of picture text -----**
www.irf.com
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**==> picture [281 x 258] intentionally omitted <==**
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TR TRR TRL
16.3 ( .641 ) 16.3 ( .641 )
15.7 ( .619 ) 15.7 ( .619 )
12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION
11.9 ( .469 ) 7.9 ( .312 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
**----- End of picture text -----**
Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25ยฐC, L = 0.77mH, RG = 25โฆ, IAS = 17A. Pulse width โค 400ยตs; duty cycle โค 2%.
2) Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 42A. ยฉ When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.
ฮธ
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IRโs Web site.
**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 12/05
www.irf.com
10
## Links
- [View this product on Novapart](https://novapart.co/products/IRLU8713PBF/power-mosfet-n-channel-25-v-42-a-48-ohm-to-251aa)
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---
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