# Power MOSFET, N Channel, 55 V, 30 A, 0.014 ohm, TO-251AA, Through Hole

![Product image](https://novapart.co/image/farnell:8660336/)

**URL**: https://novapart.co/products/IRLU3915PBF/power-mosfet-n-channel-55-v-30-a-0014-ohm-to-251aa
**SKU**: IRLU3915PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3810
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 120W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 120W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.014ohm |
| Transistor Case Style | TO-251AA |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 30A |
| Drain Source On State Resistance | 0.014ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:8660336/)

## PD - 95090B 

## IRLR3915PbF IRLU3915PbF 

## HEXFET[®] Power MOSFET 

## **Features** 

Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free 

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D<br>VDSS = 55V<br>R  = 14m Ω<br>DS(on)<br>G<br>ID = 30A<br>S<br>**----- End of picture text -----**<br>


## **Description** 

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.  Additional features of this product  are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features t ~~ ~ combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. D-Pak I-Pak IRLR3915PbF IRLU3915PbF **Absolute Maximum Ratings Parameter Max. Units** ~~|~~ ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon limited) 61 ~~a~~ ID @ TC = 100°C ~~a~~ Continuous Drain Current, VGS @ 10V (See Fig.9) 43 A a ID @ TC = 25°C ~~a~~ Continuous Drain Current, VGS @ 10V (Package limited) 30 o> IDM o_o Pulsed Drain Current 240 ~~a~~ PD @TC = 25°C ~~a~~ Power Dissipation 120 W ~~aa~~ Linear Derating Factor 0.77 W/°C ~~a~~ VGS ~~a~~ Gate-to-Source Voltage ± 16 V ~~a~~ EAS Single Pulse Avalanche Energy 200 mJ ~~a~~ EAS (6 sigma) Single Pulse Avalanche Energy Tested Value 600 ~~a~~ IAR Avalanche Current See Fig.12a, 12b, 15, 16 A EAR Repetitive Avalanche Energy mJ TJ Operating Junction and -55  to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) ~~**a** =~~ **Thermal Resistance Parameter Typ. Max. Units** eses a R θ JC Junction-to-Case ––– nD 1.3 R θ JA a Junction-to-Ambient (PCB mount) ––– 50 °C/W R θ JA Junction-to-Ambient––– 110 

HEXFET(R) is a registered trademark of International Rectifier. 

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|||~~ee~~|||||
|---|---|---|---|---|---|---|
|~~Sn~~<br>~~-~~|**Parameter**<br>ee<br>~~Sn~~|**Min.**<br>ee<br>~~ee~~<br>~~es~~<br>~~es ee~~|**Typ. **<br>ee<br>~~ee~~<br>~~ee~~|**Max. **<br>ee|**Units**<br>ee|**Conditions**<br>ee|
|V(BR)DSS<br>~~Sn~~<br>~~-~~|Drain-to-Source Breakdown Voltage<br>~~es~~<br>~~Sn~~|55<br>~~ee~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es ee~~|–––<br>~~es~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~<br>~~eees~~|V<br>~~es~~|VGS= 0V, ID= 250µA<br>~~es~~|
|∆V(BR)DSS/∆TJ<br>~~Sn~~<br>~~-~~|Breakdown Voltage Temp. Coefficient<br>~~es~~<br>~~ee~~<br>~~Sn~~|–––<br>~~es ~~<br>~~es~~<br>~~es~~<br>~~ee~~<br>~~es ee~~|0.057 <br> ~~ee~~<br>~~es~~<br>~~ee~~<br>~~eeSS~~<br>~~ee~~|–––<br>~~es~~<br>~~eees~~<br>~~SS~~|V/°C<br>~~es~~|Reference to 25°C, ID= 1mA<br>~~es~~<br>~~:~~|
|RDS(on)<br>~~Sn~~<br>~~-~~|Static Drain-to-Source On-Resistance<br>~~ee~~<br>~~|~~<br>~~Sn~~|–––<br>~~es ~~<br>~~ee~~<br>~~|fT~~<br>~~es ee~~|12<br> ~~ee~~<br>~~eeSS~~<br>~~fT~~<br>~~ee~~|14<br>~~ee es~~<br>~~SS~~<br>~~fT~~|mΩ<br>~~fT~~|VGS= 10V, ID= 30A<br>~~:~~<br>~~®~~|
|||–––<br>~~ee~~<br>~~|fT~~<br>~~es ee~~|14<br>~~eeSS~~<br>~~fT~~<br>~~ee~~|17<br>~~SS~~<br>~~fT~~||VGS= 5.0V, ID= 26A<br>~~:~~<br>~~®~~|
|VGS(th)<br>~~Sn~~<br>~~-~~|Gate Threshold Voltage<br>~~ee~~<br>~~|~~<br>~~es~~<br>~~Sn~~|1.0<br>~~ee~~<br>~~| fT~~<br>~~es~~<br>~~es ee~~|–––<br>~~ee SS~~<br>~~fT~~<br>~~es~~<br>~~ee~~|3.0<br>~~SS~~<br>~~fT~~<br>~~es~~|V<br>~~fT~~<br>~~es~~|VDS= 10V, ID= 250µA<br>~~:~~<br>~~®~~<br>~~es~~|
|gfs<br>~~Sn~~<br>~~-~~|Forward Transconductance<br>~~Sn~~|42<br>~~es ee~~|–––<br>~~ee~~|–––|S|VDS= 25V, ID= 30A|
|IDSS<br>~~Sn~~<br>~~-~~|Drain-to-Source Leakage Current<br>~~Sn~~|–––<br>~~es ee~~|–––<br>~~ee~~|20|µA|VDS= 55V, VGS= 0V<br>VDS= 55V, VGS= 0V, TJ= 125°C|
|||–––<br>~~es ee~~|–––<br>~~ee~~<br>=|250|||
|IGSS<br>~~Sn~~<br>~~-~~|Gate-to-Source Forward Leakage<br>~~Sn~~<br>~~[ot~~|–––<br>~~es ee~~<br>~~[ot~~<br>~~ee~~|–––<br>~~ee~~<br>~~[ot~~|200<br>~~[ot~~|nA<br>~~[ot~~<br>~~ee~~|VGS= 16V<br>VGS= -16V<br>~~[ot~~|
||Gate-to-Source Reverse Leakage<br>~~Sn~~<br>~~[ot~~<br>~~ee~~|–––<br>~~es ee~~<br>~~[ot~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~[ot~~<br>~~ee~~|-200<br>~~[ot~~<br>~~ee~~|||
|Qg|Total Gate Charge<br>~~[ot~~<br>~~ee~~|–––<br>~~[ot~~<br>~~ee~~<br>~~ee~~|61<br>~~[ot~~<br>~~ee~~|92<br>~~[ot~~<br>~~ee~~|nC<br>~~[ot~~<br>~~ee~~|ID= 30A<br>VDS= 44V<br>VGS= 10V<br>~~[ot~~<br>~~-~~|
|Qgs|Gate-to-Source Charge|–––|9.0|14|||
|Qgd<br>~~ee~~|Gate-to-Drain("Miller")Charge<br>~~ee~~|–––<br>~~ee~~|17<br>~~ee~~|25<br>~~ee~~|||
|td(on)<br>~~ee~~|Turn-On Delay Time<br>~~ee~~|–––<br>~~ee~~|7.4<br>~~ee~~|–––<br>~~ee~~|ns|VDD= 28V<br>ID= 30A<br>RG= 8.5Ω<br>VGS= 10V<br>~~-~~<br>~~;~~|
|tr<br>~~a~~|Rise Time|–––<br>~~ee~~|51|–––|||
|td(off)<br>a<br>~~a~~|Turn-Off Delay Time<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|83<br>~~ee~~|–––<br>~~ee~~|||
|tf<br>~~a~~|Fall Time|–––<br>~~ee~~|100|–––|||
|LD<br>~~a~~<br>~~TT~~|Internal Drain Inductance<br>~~TT~~|–––<br>~~ee~~<br>~~TT~~|4.5<br>~~TT~~|–––<br>~~TT~~|~~TT~~|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>S<br>D<br>G<br>~~;~~<br>~~TT~~<br>~~@~~|
||||||nH<br>~~TT~~||
|LS<br>~~TT~~|Internal Source Inductance<br>~~TT~~|–––<br>~~TT~~|7.5<br>~~TT~~|–––<br>~~TT~~|||
|Ciss<br>~~TT~~|Input Capacitance<br>~~TT~~<br>~~ee~~|–––<br>~~TT~~<br>~~ee~~|1870<br>~~TT~~<br>~~ee~~|–––<br>~~TT~~<br>~~ee~~|pF<br>~~TT~~|VGS= 0V<br>VDS= 25V<br>~~TT~~<br>~~@~~<br>PO|
|Coss<br>~~ee~~<br>es|Output Capacitance<br>~~ee~~<br>es|–––<br>es|390|–––|||
|Crss<br>~~ee~~<br>es<br>ee|Reverse Transfer Capacitance<br>~~ee~~<br>es<br>ee|–––<br>es<br>es|74|–––||ƒ = 1.0MHz, See Fig. 5<br>PO<br>PO|
|Coss<br>es<br>ee<br>es|Output Capacitance<br>es<br>ee<br>ee|–––<br>es<br>es<br>ee<br>es|2380<br>ee|–––<br>ee||VGS= 0V,  VDS= 1.0V,  ƒ = 1.0MHz<br>PO<br>PO|
|Coss<br>ee<br>es|Output Capacitance<br>ee<br>ee|–––<br>es<br>ee<br>es|290<br>ee|–––<br>ee||VGS= 0V,  VDS= 44V,  ƒ = 1.0MHz<br>VGS= 0V, VDS= 0V to 44V<br>PO|
|Cosseff.<br>es|Effective Output Capacitance<br>ee|–––<br>ee<br>es|540<br>ee|–––<br>ee|||
|**Source-Drain Ratings and Characteristics**<br>ne<br>~~ee~~-<br>(a|||||||
|ne|**Parameter**<br>~~ee~~|**Min.**<br>-|**Typ. **<br>-|**Max. **|**Units**|**Conditions**<br>(a|
|IS<br>ne<br>~~je~~|Continuous Source Current<br>(Body Diode)<br>~~ee~~<br>~~je~~<br>~~{|~~|–––<br>-<br>~~{|[|~~|–––<br>-<br>~~[||~~|61<br>~~|~~|~~|~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>S<br>D<br>G<br>(a|
|ISM<br>ne<br>~~je~~|Pulsed Source Current<br>(Body Diode)<br>~~ee~~ <br>~~je~~<br>~~{|~~|–––<br> -<br>~~{|[|~~|–––<br>-<br>~~[||~~|240<br>~~|~~|||
|VSD<br>~~je~~<br>~~po~~|Diode Forward Voltage<br>~~je~~<br>~~{|~~<br>~~po~~|–––<br>~~{|[|~~<br>~~po~~|–––<br>~~[||~~<br>~~po~~|1.3<br>~~|~~<br>~~po~~|V<br>~~|~~<br>~~po~~|TJ= 25°C, IS= 30A, VGS= 0V|
|trr<br>~~je~~<br>~~po~~|Reverse Recovery Time<br>~~je~~<br>~~{|~~<br>~~po~~<br>~~es~~|–––<br>~~{| [|~~<br>~~po~~<br>~~es~~|62<br>~~[| | ~~<br>~~po~~|93<br> ~~|~~<br>~~po~~|ns<br>~~|~~<br>~~po~~|TJ= 25°C, IF= 30A, VDD= 25xjkl V<br>di/dt = 100A/µs<br>~~®~~|
|Qrr|Reverse RecoveryCharge<br>~~es~~|–––<br>~~es~~|110|170|nC||
|ton|Forward Turn-On Time<br>~~es ~~|Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)<br> ~~es~~<br>~~®~~|||||



|**Source-Drain Ratings and Characteristics**||
|---|---|
|**Parameter**<br>**Min.**<br>**Typ. Max. Units**<br> **Conditions**<br>IS<br>Continuous Source Current<br>MOSFET symbol<br>(Body Diode)<br>–––<br>–––<br>showing  the<br>ISM<br>Pulsed Source Current<br>integral reverse<br>(Body Diode)<br>–––<br>–––<br>p-n junction diode.<br>VSD<br>Diode Forward Voltage<br>–––<br>–––<br>1.3<br>V<br>TJ= 25°C, IS= 30A, VGS= 0V<br>trr<br>Reverse Recovery Time<br>–––<br>62<br>93<br>ns<br>TJ= 25°C, IF= 30A, VDD= 25xjkl V<br>Qrr<br>Reverse RecoveryCharge<br>–––<br>110<br>170<br>nC<br>di/dt = 100A/µs<br>ton<br>Forward Turn-On Time<br>Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)<br>S<br>D<br>G<br>61<br>240<br>ne<br>~~ee~~ -<br>(a<br>~~je~~<br>~~{| [| | |~~<br>~~po~~<br>~~es es~~<br>~~®~~||



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10000<br>VGS<br>TOP           15V<br>1000 10V<br>5.0V<br>3.0V<br>2.7V<br>100 2.5V<br>2.25V<br>BOTTOM 2.0V<br>10<br>1 P AT<br>0.1 2.0V<br>0.01 e c<br>MetHE eeeHE 20µs PULSE WIDTHTj = 25°C ett<br>0.001<br>0.1 1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br>1000.00<br>TJ = 25°C<br>T = 175°C<br>tS J<br>100.00<br>a A<br>10.00<br>1.00<br>i<br>VDS = 25V<br>f ee 20µs PULSE WIDTH<br>0.10<br>1.0 3.0 5.0 7.0 9.0 11.0 13.0 15.0<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>)<br>(Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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1000<br>VGS<br>TOP           15V<br>10V<br>5.0V<br>3.0V<br>100 2.7V<br>2.5V<br>2.25V<br>BOTTOM 2.0V<br>10<br>f f<br>|<br>2.0V<br>1<br>VACoSBA SeellAl 20µs PULSE WIDTHTj = 175°C nlHi<br>0.1<br>0.1 1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>70<br>60<br>LT TJ = 25°C [|]<br>50 P o<br>40<br>30 TJ = 175°C<br>20<br>|<br>10 yy<br>0<br>0 10 20 30 40 50 60<br>ID,Drain-to-Source Current (A)<br>Gfs, Forward Transconductance (S)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 4.** Typical Forward Transconductance vs. Drain Current 

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100000<br>VGS   = 0V,       f = 1 MHZ<br>= Ciss   = Cgs + Cgd,  Cds SHORTED<br>— Crss   = Cgd<br>C = C + C<br>10000 ; | oss   ds  gd<br>eee amen Ciss<br>1000 C le a n<br>PTTrr ee.NNSe eee Coss [|ne| |Ty<br>100<br>p t INS C<br>rss<br>10 es<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance vs.<br>Drain-to-Source Voltage<br> 1000<br> 100 Bee<br>SSS<br>a ee ee ee, ee ee ee eee<br>T  = 175      CJ °<br> 10 ee e 4 5 72a<br>nAa  Ge<br>T  = 25      CJ °<br> 1 —<br>[ee] ee ee<br>SSa [ee] SS V      = 0 V GS =<br>0.1 Ti? ttt ft 7<br>0.0 0.5 1.0 1.5 2.0<br>V     ,Source-to-Drain Voltage (V)SD<br>I     , Reverse Drain Current (A)SD<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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12<br>ID = 30A<br>T e VDS =  44V To<br>VDS =  27V<br>10 PT TT VDS =  11V S250<br>P| | yl |fZ ||<br>8 PTT TTT TTT<br>6 SeSSR0ePATTAnnee<br>4 L ,<br>PTT ATT<br>2<br>tT<br>0 Viti Te<br>0 10 20 30 40 50 60 70<br>Q   , Total Gate Charge (nC)G<br>GS<br>V     , Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


## **Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

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1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>Se CPSs | eee<br>100 A STIN LUST LTT<br>peeNi<br>eS P TSee<br>100µsec<br>10 CO U e SEOSBase IS  fdConill<br>1msec<br>Con<br>Tc = 25°C<br>Tj = 175°C<br>Single Pulse r 10msec<br>1 eeeeeae atiI<br>1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

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70 2.5<br>I D = 61A<br>LIMITED BY PACKAGE<br>60 RA Eee fe eee<br>PELL P LL 2.0 SERRE<br>50<br>po Wg<br>40 FEES EEE 1.5 PS E LER ELE EEE E ZEnnLA<br>30<br>1.0<br>PPPS = EERE<br>AEE a5; 2cnennnne<br>20 ee Bz<br>ae ee 0.5 TTT TEE Te<br>10<br>po fi fA PTET ET<br>V GS = 10V<br>0 A 0.0 PETETP Ey E<br>25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>°<br>T   , Case TemperatureC (  C)° T  , Junction TemperatureJ (    C)<br>Fig 9.   Maximum Drain Current vs. Fig 10.   Normalized On-Resistance<br>Case Temperature vs. Temperature<br> 10<br>PT UE TT TT<br>P| [EP] TTTTT<br> 1<br>D = 0.50<br>0.20<br>p 0.10 oe P DM<br>0.1 0.05<br>t 1<br>0.02 SINGLE PULSE<br>0.01 (THERMAL RESPONSE) t 2<br>ee Se eeet eea e ee e<br>om | | ey E E 1. Duty factor D =Notes: t   / t1 2<br>P E 2. Peak T J = P DM x  Z thJC + T C<br>0.01 PT [TE] ET<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>(Normalized)<br>I   , Drain Current (A)D<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>thJC<br>(Z          )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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500<br>15V ID<br>pitt<br>TOP 12A<br>21A<br>VDS L DRIVER 400 BOTTOM 30A<br>[co co<br>RG D.U.T + 300<br>- [V][DD]<br>IAS A<br>20VVGS<br>B tp 0.01 Ω 200 NERDNENEEEEPSINUNEEE<br>Fig 12a.   Unclamped Inductive Test Circuit Ef<br>V(BR)DSS<br>a tp 100 PNAPoESS A|<br>m 0 a e<br>/ Pot | |SS<br>25 50 75 100 125 150 175<br>Starting Tj, Junction Temperature (   C)°<br>/ ||<br>IAS 7 “ | SNESeee<br>Fig 12c.   Maximum Avalanche Energy<br>Fig 12b.   Unclamped Inductive Waveforms<br>vs. Drain Current<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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cS QG<br>10 ve<br>QGS QGD<br>VG<br>a<br>**----- End of picture text -----**<br>


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Charge<br>=<br>**----- End of picture text -----**<br>


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Fig 13a.   Basic Gate Charge Waveform<br>Current Regulator<br>Same Type as D.U.T.<br>a 50K Ω<br>12V .2 µ F<br>.3 µ F<br>ca D.U.T. +-VDS<br>VGS<br>3mA<br>spe<br>ont. IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 13b.** Gate Charge Test Circuit 

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2.0 O TT<br>1.5 P INEAL<br>ID = 250µA<br>EE N<br>1.0<br>P LLEEIN<br>P PE<br>0.5<br>-75 -50 -25 0 25 50 75 100 125 150 175 200<br>TJ , Temperature ( °C )<br>WLU<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 14.** Threshold Voltage vs. Temperature 

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TOR Rectifier<br>1000<br>Duty Cycle = Single Pulse<br>| | ||<br>100 e l ys SSA | Allowed avalanche Current vs<br>0.01 avalanche  pulsewidth,  tav<br>assuming  ∆ Tj = 25°C due to<br>avalanche losses<br>10 aS eti 0.05 c t oe aE SalilSe ||<br>0. 10<br>ee | | | |<br>1 | A a<br>err CTI AI-FST P<br>0.1 a nn en ll<br>1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 15.   Typical Avalanche Current vs.Pulsewidth<br>220 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>B l TOP          Single Pulse                 (For further info, see AN-1005 at www.irf.com)<br>200<br>180 N ii BOTTOM   10% Duty CycleID = 30A 1. Avalanche failures assumption:  Purely a thermal phenomenon and failure occurs at a<br>    temperature far in excess of Tjmax. This is validated for<br>160<br>140 KP WHINE     every part type.2. Safe operation in Avalanche is allowed as long asTjmax is<br>  not exceeded.<br>120 P TE NETEEE EEE 3. Equation below based on circuit and waveforms shown in<br>100 P T EN ETEET TT   Figures 12a, 12b.<br>8060 PP TTTENETTEENEEETT     avalanche pulse.5. BV = Rated breakdown voltage (1.3 factor accounts for4. PD (ave) = Average power dissipation per single<br>    voltage increase during avalanche).<br>40 P t tT TTT INGETTT T T 6. Iav = Allowable avalanche current.<br>20 S ERENE 7.  ∆ T = Allowable rise in junction temperature, not to exceed<br>0 E RRKS     T  tav = jmax Average time in avalanche.(assumed as 25°C in Figure 15, 16).<br>25 50 75 100 125 150 175   D = Duty cycle in avalanche =  tav ·f<br>Starting TJ , Junction Temperature (°C)   ZthJC(D, tav) = Transient thermal resistance, see figure 11)<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 16.** Maximum Avalanche Energy vs. Temperature 

**PD (ave) = 1/2 ( 1.3·BV·Iav) =** A **T/ ZthJC Iav = 2** A **T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav** 

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Driver Gate Drive<br>P.W.<br>D.U.T + Period — D = ——<br>+ P.W. Period<br>) [©)]    •  Circuit Layout Considerations V |t GS=10V<br> •<br>| =] - LowGround StrayPla I n eductance<br> •  Low Leakage Inductance ® D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oi - [l] Current Transformer - ® + Current r Current di/dt AN<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘<br>00 _ VDD<br>•   Re-Applied<br>•  Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( 4) •   dvidt controlled by Re Vpp - Inductor Curent [_<br>•   D.U.T. - Device Under Test es ee<br>Ripple  ≤ 5% ISD<br>Isp controlled by Duty Factor "D" ®<br>**----- End of picture text -----**<br>


**Fig 17.** 

## Recovery dv/dt Test Circuit or N-Channel HEXFET ® Power MOSFETs 

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-<br>|<br>≤ 1  ys<br>≤ 0.1 %<br>**----- End of picture text -----**<br>


**Fig 18a.** Switching Time Test Circuit 

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VDS<br>90%<br>10%<br>VGS |\< ole >!eeple<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 18b.** Switching Time Waveforms 

www.irf.com 

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EXAMPLE: THIS IS AN IRFR120<br>WITH ASSEMBLY INTERNATIONAL a PART NUMBER<br>LOT CODE 1234 RECTIFIER IRFR120 DATE CODE<br>ASSEMBLED ON WW 16, 2001 LOGO 116A YEAR 1 =  2001<br>IN THE ASSEMBLY LINE "A" 12 34 WEEK 16<br>LINE A<br>Note: "P" in assembly line positionindicates "Lead-Free" ASSEMBLYLOT CODE i a t<br>"P" in assembly line position indicates<br>"Lead-Free" qualification to the consumer-level<br>PART NUMBER<br>INTERNATIONAL cS<br>OR RECTIFIER IRFR120 P =  DESIGNATES LEAD-FREEDATE CODE<br>LOGO PRODUCT (OPTIONAL)<br>12 34 P =  DESIGNATES LEAD-FREE<br>ASSEMBLYLOT CODE imam PRODUCT QUALIFIED TO THECONSUMER LEVEL (OPTIONAL)<br>YEAR 1 =  2001<br>WEEK 16<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


## **Notes: 1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** www.irf.com 

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EXAMPLE: THIS IS AN IRFU120 PART NUMBER<br>WITH ASSEMBLYASSEMBLED ON WW 19, 2001LOT CODE 5678 INTERNATIONALRECTIFIERLOGO gS 56IRFU120119A78 DATE CODEYEAR 1 =  2001WEEK 19<br>IN THE ASSEMBLY LINE "A"<br>LINE A<br>ASSEMBLY<br>LOT CODE<br>Note: "P" in assembly line position<br>indicates Lead-Free"<br>OR<br>PART NUMBER<br>INTERNATIONAL a<br>RECTIFIER IRFU120 DATE CODE<br>LOGO P =  DESIGNATES LEAD-FREE<br>56 78 PRODUCT (OPTIONAL)<br>ASSEMBLY YEAR 1 =  2001<br>LOT CODE WEEK 19<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


## **Notes:** 

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www.irf.com<br>**----- End of picture text -----**<br>


**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 10 

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TR TRR TRL<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>12.1 ( .476 ) cc FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION -<br>11.9 ( .469 ) 7.9 ( .312 )<br>NOTES :<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).<br>3.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>|   13 INCH<br>16 mm<br>mN ae<br>**----- End of picture text -----**<br>


NOTES : 

1. OUTLINE CONFORMS TO EIA-481. 

Notes: ®© Repetitive rating;  pulse width limited by Cossoss eff. is a fixed capacitance that gives the same charging time max. junction temperature. (See fig. 11). as Coss while VDS is rising from 0 to 80% VDSS . while VDS is rising from 0 to 80% VDSS . . 

Cossoss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . © Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. @ This value determined from sample failure population. 100% tested to this value in production. 

@ Limited by TJmax, starting TJ = 25°C, © L = 0.45mH, RG = 25 Ω , IAS = 30A, VGS =10V. Part not recommended for use above this @ value. 

@ ISD ≤ 30A, di/dt ≤ 280A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. 2) Pulse width ≤ 1.0ms; duty cycle ≤ 2%. 

When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 10/2010 

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---

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