# Power MOSFET, N Channel, 100 V, 15 A, 0.105 ohm, TO-251AA, Through Hole

![Product image](https://novapart.co/image/farnell:8660280/)

**URL**: https://novapart.co/products/IRLU3410PBF/power-mosfet-n-channel-100-v-15-a-0105-ohm-to
**SKU**: IRLU3410PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3420
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.105ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Di

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 52W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-251AA |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 15A |
| Drain Source On State Resistance | 0.105ohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:8660280/)

PD - 95087A 

## IRLR/U3410PbF 

- Logic Level Gate Drive Ultra Low On-Resistance Surface Mount (IRLR3410) Straight Lead (IRLU3410) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free 

## HEXFET[®] Power MOSFET 

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D<br>VDSS = 100V<br>R  = 0.105Ω<br>DS(on)<br>G<br>ID = 17A<br>S<br>**----- End of picture text -----**<br>


## **Description** 

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. 

The D-PAK is designed for surface mounting using vapor  phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications.  Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. 

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   D-PAK    I-PAK<br>TO-252AA TO-251AA<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

**Parameter Max. Units** ~~Be~~ ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 17 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 12 A ~~———~~ IDM Pulsed Drain Current 60 PD @TC = 25°C Power Dissipation 79 W ~~———~~ Linear Derating Factor 0.53 ~~—~~ W/°C VGS Gate-to-Source Voltage ± 16 V ~~—. << es~~ EAS ~~ee~~ Single Pulse Avalanche Ener ~~a~~ gy 150 mJ ~~—~~ IAR Avalanche Current 9.0 A ~~ee~~ EAR Repetitive Avalanche Energy 7.9 ~~—~~ mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55  to + 175 ~~ee~~ TSTG Storage Temperature Range °C ~~a~~ Soldering Temperature, for 10 seconds 300 (1.6mm from case ) 

## **Thermal Resistance** 

||**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RθJC|Junction-to-Case|–––|1.9||
|RθJA|Junction-to-Ambient (PCB mount) **|–––|50|°C/W|
|RθJA|Junction-to-Ambient|–––|110||
|www.irf.com||||1|



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## IRLR/U3410PbF 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|~~Rses~~<br>~~ee~~|**Parameter**<br>~~es~~<br>|**Min.**<br>~~es~~<br>~~rs rs~~<br>|**Typ. **<br>~~es~~<br>~~rs~~<br>|**Max.**<br>~~es~~<br><br>~~ns~~|**Units**<br>~~es~~<br><br>~~ns~~|**Conditions**<br>~~es~~<br>|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~Rses~~<br>~~eess~~|Drain-to-Source Breakdown Voltage<br>~~es~~<br>~~ss~~|100<br>~~es~~<br>~~rs rs~~<br>~~ss~~|–––<br>~~es~~<br>~~rs~~<br>~~ss~~|–––<br>~~es~~<br>~~ss~~<br>~~ns~~|V<br>~~es~~<br>~~ss~~<br>~~ns~~|VGS= 0V, ID= 250µA<br>~~es~~<br>~~ss~~|
|∆V(BR)DSS/∆TJ<br>~~ee~~<br>~~eG~~|Breakdown Voltage Temp. Coefficient<br><br>~~eG~~|–––<br>~~rs rs~~<br><br>~~eG~~|0.122<br>~~rs~~<br><br>~~eG~~|–––<br><br>~~ns~~<br>~~eG~~|V/°C<br><br>~~ns~~<br>~~eG~~|Reference to 25°C, ID= 1mA<br><br>~~eG~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~fT~~<br>|TT<br>~~|~~TT|–––<br>~~fT~~<br>||––– <br>~~fT~~<br>|0.105<br>~~fT~~<br>|W|VGS= 10V, ID= 10A|
|||–––<br>|TT<br>~~|~~|––– <br>TT<br>|0.125<br>TT<br>||VGS= 5.0V, ID= 10A|
|||–––<br>|TT<br>~~|~~TT|––– <br>TT<br>TT|0.155<br>TT<br>TT||VGS= 4.0V, ID= 9.0A|
|VGS(th)<br>~~eG~~|Gate Threshold Voltage<br>~~|~~<br>~~eG~~|1.0<br>~~|~~<br>~~eG~~<br>~~es~~|–––<br><br>~~eG~~<br>~~es~~|2.0<br><br>~~eG~~<br>~~ns~~|V<br>~~eG~~<br>~~ns~~|VDS= VGS, ID= 250µA<br>~~eG~~|
|gfs<br>~~aen~~|Forward Transconductance<br>~~en~~|7.7<br>~~en~~<br>~~es~~|–––<br>~~en~~<br>~~es~~|–––<br>~~en~~<br>~~ns~~|S<br>~~en~~<br>~~ns~~|VDS= 25V, ID= 9.0A<br>~~en~~|
|IDSS<br>~~EE~~|Drain-to-Source Leakage Current<br>~~EE~~<br>~~|~~|–––<br>~~es~~<br>~~EE~~<br>~~||~~|–––<br>~~es ~~<br>~~EE~~<br>~~|~~|25<br> ~~ns~~<br>~~EE~~|µA<br>~~ns~~<br>~~EE~~<br>~~Po~~|VDS= 100V, VGS= 0V<br>~~EE~~<br>~~Po~~|
|||–––<br>~~EE~~<br>~~||~~|–––<br>~~EE~~<br>~~|~~|250<br>~~EE~~||VDS= 80V, VGS= 0V, TJ= 150°C<br>~~EE~~<br>~~Po~~|
|IGSS<br>~~EOE~~<br>~~ee~~<br>~~a~~|Gate-to-Source Forward Leakage<br>~~|~~<br>~~EOE~~<br>~~ee~~|–––<br>~~| |~~<br>~~EOE~~|–––<br>~~|~~<br>~~EOE~~|100<br>~~EOE~~|nA<br>~~Po~~<br>~~EOE~~<br>~~—(CCSCSCY~~|VGS= 16V<br>~~Po~~<br>~~EOE~~<br>~~—(CCSCSCY~~|
||Gate-to-Source Reverse Leakage<br>~~EOE~~<br>~~ee~~|–––<br>~~EOE~~|–––<br>~~EOE~~|-100<br>~~EOE~~||VGS= -16V<br>~~EOE~~<br>~~—(CCSCSCY~~|
|Qg<br>~~ee~~<br>~~a~~<br>ee~~ee~~|Total Gate Charge<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|–––<br>~~ee~~|34|nC<br>~~—(CCSCSCY~~|ID= 9.0A<br>VDS= 80V<br>VGS= 5.0V, See Fig. 6 and 13<br>~~—(CCSCSCY~~<br>~~ce)~~|
|Qgs<br>ee~~ee~~<br>~~ee~~|Gate-to-Source Charge<br>~~ee~~|–––<br>~~ee~~|–––<br>~~ee~~|4.8|||
|Qgd<br>ee~~ee~~<br>~~ee~~<br>~~eeee~~|Gate-to-Drain("Miller")Charge<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|20|||
|td(on)<br>~~ee~~<br>~~eeee~~<br>ee~~ee~~|Turn-On Delay Time<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|7.2<br>~~ee~~<br>~~ee~~|–––|ns|VDD= 50V<br>ID= 9.0A<br>RG= 6.0Ω,VGS= 5.0V<br>RD= 5.5Ω,See Fig. 10<br>~~ce)~~<br>~~ce)~~|
|tr<br>~~eeee~~<br>ee~~ee~~<br>ee~~ee~~<br>~~ee~~|Rise Time<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|53<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––|||
|td(off)<br>ee~~ee~~<br>ee~~ee~~<br>~~ee~~|Turn-Off Delay Time<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|30<br>~~ee~~<br>~~ee~~|–––|||
|tf<br>ee~~ee~~<br>~~ee~~|Fall Time<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|26<br>~~ee~~|–––|||
|LD<br>~~ee~~|Internal Drain Inductance|~~ee~~|4.5||nH|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>S<br>D<br>G<br>~~ce)~~|
|LS|Internal Source Inductance|–––|7.5|–––|||
|Ciss<br>~~a~~<br>es~~ee~~<br>a|Input Capacitance<br>~~a~~<br>~~ee~~|–––<br>~~a~~<br>~~ee~~<br>ee|800<br>~~a~~<br>~~ee~~|–––<br>~~a~~|pF|VGS= 0V<br>VDS= 25V<br>ƒ = 1.0MHz, See Fig. 5<br>8|
|Coss<br>~~a~~<br>es~~ee~~<br>a|Output Capacitance<br>~~a~~<br>~~ee~~|–––<br>~~a~~<br>~~ee~~<br>ee|160<br>~~a~~<br>~~ee~~|–––<br>~~a~~|||
|Crss<br>es~~ee~~<br>a|Reverse Transfer Capacitance<br>~~ee~~|–––<br>~~ee~~<br>ee|90<br>~~ee~~|–––|||



## **Notes:** 

o) Repetitive rating;  pulse width limited by @ Pulse width ≤ 300µs; duty cycle ≤ 2% max. junction temperature. ( See fig. 11 ) @© VDD = 25V, starting TJ = 25°C, L = 3.1mH Uses IRL530N data and test conditions RG = 25Ω, IAS = 9.0A. (See Figure 12) 

- @ ISD ≤ 9.0A, di/dt ≤ 540A/µs, VDD ≤ V(BR)DSS, © This is applied for I-PAK, LS of D-PAK is measured between lead and TJ ≤ 175°C center of  die contact 

- **   When mounted on 1" square PCB (FR-4 or G-10 Material ) . 

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For recommended footprint and soldering techniques refer to application note #AN-994 2 

## IRLR/U3410PbF 

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100 VG@sr ety<br> TOP           15V<br>                   12V eo rr<br>                   10V<br>                   8.0V Hirt era<br>                   6.0V<br>                   4.0V<br>                   3.0V<br> BOTTOM   2.5V Ho<br>10 een) |Zainal<br>ee iit emesis<br>fo} i AH<br>1<br>2.5V<br>Reali<br> 20µs PULSE WIDTH<br>eT  T   = 25°CJ<br>0.1<br>0.1 1 10 100<br>V     , Drain-to-Source Voltage (V)DS<br>Fig 1.   Typical Output Characteristics<br>100 eS<br>T  = 25°CJ<br>Po ran p ee<br>|<br>T  = 175°CJ<br>A<br>10 PPA<br>Se; See ee ee eaeeee<br>FEES EEE<br>PT<br>1 F/R<br>FER<br>FEE EEE<br>ypeey | ft Pp tp<br>0.1 TT}LLFF| |  V     = 50V seenasecous DS puns monwore<br>2 3 4 5 6 7 8 9 10<br>V     , Gate-to-Source Voltage (V)GS<br>I   , Drain-to-Source Current (A)D<br>D<br>I   , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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100<br> TOP           15V<br>                   12V VG — eel<br>                   10V<br>                   8.0V<br>                   6.0V FEE eH<br>                   4.0V<br>                   3.0V<br> BOTTOM   2.5V 1irona<br>10 lll eer7/22<br>Fete<br>—| a 2.5V<br>1<br>SMI<br> 20µs PULSE WIDTH<br>0.1 PTT  T   = 175°CJ<br>0.1 1 10 100<br>V     , Drain-to-Source Voltage (V)DS<br>I   , Drain-to-Source Current (A)D<br>**----- End of picture text -----**<br>


**Fig 2.** Typical Output Characteristics 

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3.0<br>T AT<br>2.5 P ELEEEE EEL<br>TTT TTT TAT yy,<br>2.0 PUT<br>A ee<br>1.5 PU ae<br>A<br>1.0 CCT er<br>aTPEP er<br>0.50.0 aTOEDEPV GE ORUE OE ORDE OE ORDEOD tov<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>T   , Junction Temperature (°C)J<br>(Normalized)<br>DS(on)<br>R           ,  Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance Vs. Temperature 

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## IRLR/U3410PbF 

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1400<br>V      = 0V,         f = 1MHzGS<br>C      = C     + C     ,   C     SHORTEDiss         gs         gd         ds<br>1200 C      = Crss         gd<br>CT C      = C     + Coss        ds         gd<br>1000 s<br>Pe<br>ee<br>800 Pe<br>|<br>REC<br>600<br>ss<br>400 Se000<br>ss<br>eH<br>200<br>0 CnRa 20So<br>1 10 100<br>V     , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


## **Fig 5.** Typical Capacitance Vs. Drain-to-Source Voltage 

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100<br>a<br>ee ee a a<br>T  = 175°CJ<br>10 PL A ]<br>| | | fi |<br>T  = 25°CJ<br>fae ee oe F  a<br>ee) ee 2 ee eee eee<br>1 /|] ff !<br>0.4 0.6 0.8 1.0 1.2 1.4<br>V     , Source-to-Drain Voltage (V)SD<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


## **Fig 7.** Typical Source-Drain Diode Forward Voltage 

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15<br>I    = 9.0AD<br>12 py  V      = 20VDS csv<br>rT Ne<br>PT<br>9<br>| | pe<br>SL<br>Ps | | | AF<br>6<br>Enna>WA<br>3<br>oa<br>0 ft[|] ft     SEE FIGURE 13 renter  nou<br>0 10 20 30 40 50<br>Q   , Total Gate Charge (nC)G<br>GS<br>V     , Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 6.** Typical Gate Charge Vs. Gate-to-Source Voltage 

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1000<br> OPERATION IN THIS AREA LIMITED<br>                       BY R DS(on)<br>EHH<br>vi Ht<br>100<br>SS eet enhe 10µs e<br>PANE PSE<br>10 iCATAPepsSLAMONSq 100µs HT|=a<br>1ms<br>Bef  Single Pulse ON 10ms<br>1 Socal A A<br>1 10 100 1000<br>V     , Drain-to-Source Voltage (V)DS<br>I   , Drain Current (A)D<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

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20 PP Rp<br>~~  EEE EEE V Vos :<br>15<br>-<br>PEANUT ws °<br>PCEEEDNELE ) + 5.0V<br>10 ≤ 1<br>≤ 0.1 %<br>NOP | Duty Factor<br>PEN Fig 10a.   Switching Time Test Circuit ,<br>5<br>VDSDS<br>90%<br>0<br>25 50 75 100 125 150 175<br>° |<br>T   , Case TemperatureC (  C)<br>|<br>10%<br>VGSGS |<br>PL ETE EEE Ey AY.\¢\¢ o< >| le<br>I   , Drain Current (A)D<br>**----- End of picture text -----**<br>


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VDSDS<br>90%<br>|<br>|<br>10%<br>|<br>VGSGS<br>AY.\¢\¢ o< >| le<br>td(on) tr td(off) tf<br>Fig 10b.   Switching Time Waveforms<br>**----- End of picture text -----**<br>


**Fig 9.** Maximum Drain Current Vs. Case Temperature 

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 10<br>aa eeeee eee ee eee<br>a a 8se8Oe Oe OQ DQ OG GS GG GGG GO GGG GG<br>cet<br> 1 L D = 0.50 eer<br>r r pOTT TTT<br>|<br>0.20<br>R n eee eet—s eed e ee<br>e 0.10 0e<br>0.05 coer _ce nen ee ee ee PDM<br>0.1 0.020.01 EE (THERMAL RESPONSE)SINGLE PULSE TT200 t1<br>aa 0 a e eee t2<br>Notes:<br>1. Duty factor D = t   / t1 2<br>2. Peak T J = P DM x  Z thJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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15V<br>L DRIVER<br>VDS<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>10V<br>Jt tp 0.01Ω<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

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V(BR)DSS<br>~<— tp —><br>/<br>mal<br>/ \<br>IAS<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

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OO QG<br>QGS QGD<br>VG<br>Charge<br>**----- End of picture text -----**<br>


**Fig 13a.** Basic Gate Charge Waveform 

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350<br>                    I D<br>Pt<br>300 Nee TOP            3.7A                   6.4A<br>PN FE BOTTOM    9.0A<br>PNET<br>250 PIN tT Tt pt<br>200 Se NSS eee<br>NER<br>150 PNP<br>INS KLNeNE<br>100 Pp MANY AP<br>P| PT ANKE Ef<br>50 po UA RE<br>Pt | tT tT rR<br>0 ee  V      = 25VDD ee ee<br>25 50 75 100 125 150 175<br>Starting T  , Junction Temperature (°C)J<br>AS<br>E     ,   Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>.3µF<br>= SS SSS +<br>D.U.T. -VDS<br>VGS<br>3mA<br>Ot<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 13b.** Gate Charge Test Circuit 

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## IRLR/U3410PbF 

## **Peak Diode Recovery dv/dt Test Circuit** 

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+ Circuit Layout Considerations<br>D.U.T<br>   •  Low Stray Inductance<br> •  Ground Plane<br> •  Low Leakage Inductance<br>(faa)       Current Transformer<br>| | -<br>+<br>- - +<br>Ke.<br>00)<br>RG •  dv/dt controlled by RG +<br>se •  Driver same type as D.U.T. - VDD<br>•  ISD controlled by Duty Factor "D"<br>•  D.U.T. - Device Under Test<br>**----- End of picture text -----**<br>


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O) Driver Gate Drive<br>P.W.<br>Period D =<br>es P.W. | Period _!<br>VGS=10V<br>( \<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current i Current di/dt JN<br>©) D.U.T. VDS Waveform<br>Diode Recovery<br>dv/dt<br>VDD<br>ma<br>Re-Applied ai<br>Voltage Body Diode  Forward Drop<br>® Inductor Curent<br>a<br>Ripple  ≤ 5% ISD<br>* VGS = 5V for Logic Level Devices<br>**----- End of picture text -----**<br>


**Fig 14.** For N-Channel HEXFETS 

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## IRLR/U3410PbF 

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EXAMPLE: THIS IS AN IRFR120<br>PART NUMBER<br>WITH ASSEMBLY<br>INTERNATIONAL<br>LOT CODE 1234 RECTIFIER IRFU120 DATE CODE<br>ASSEMBLED ON WW 16, 1999 LOGO 916A YEAR 9 =  1999<br>IN THE ASSEMBLY LINE "A" 12 34 WEEK 16<br>LINE A<br>Note: "P" in assembly line position ASSEMBLY<br>indicates "Lead-Free" LOT CODE : : |<br>OR<br>PART NUMBER<br>INTERNATIONAL<br>RECTIFIER IRFU120 DATE CODE<br>LOGO TeaR P916A P =  DESIGNATES LEAD-FREE<br>12 34 PRODUCT (OPTIONAL)<br>YEAR 9 =  1999<br>ASSEMBLY { : | WEEK 16<br>LOT CODE<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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EXAMPLE: THIS IS AN IRFU120 PART NUMBER<br>INTERNATIONAL<br>WITH ASSEMBLY<br>LOT CODE 5678 RECTIFIER IRFU120 DATE CODE<br>LOGO 919A YEAR 9 =  1999<br>ASSEMBLED ON WW 19, 1999 56 78 WEEK 19<br>IN THE ASSEMBLY LINE "A"<br>LINE A<br>ASSEMBLY<br>Note:  "P" in assembly line  LOT CODE<br>position indicates "Lead-Free"<br>a<br>PART NUMBER<br>INTERNATIONAL go N<br>RECTIFIER IRFU120 DATE CODE<br>LOGO TGR Pig P =  DESIGNATES LEAD-FREE<br>56 78 PRODUCT (OPTIONAL)<br>YEAR 9 =  1999<br>ASSEMBLY WEEK 19<br>LOT CODE A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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TR TRR TRL<br>eeoeogeoo\ | eeoo/4<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>CCE, GIO)<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>NOTES :<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).<br>3.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>  13 INCH<br>| :<br>16 mm<br>mN me] be<br>**----- End of picture text -----**<br>


NOTES : 

1. OUTLINE CONFORMS TO EIA-481. 

Data and specifications subject to change without notice. International 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 12/04 

www.irf.com 

10 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRLU3410PBF/power-mosfet-n-channel-100-v-15-a-0105-ohm-to)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irlu3410pbf/mosfet-n-100v-15a-i-pak/dp/8660280)
---

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