# Power MOSFET, N Channel, 100 V, 63 A, 0.014 ohm, TO-251AA, Through Hole

![Product image](https://novapart.co/image/farnell:1298556/)

**URL**: https://novapart.co/products/IRLU3110ZPBF/power-mosfet-n-channel-100-v-63-a-0014-ohm-to
**SKU**: IRLU3110ZPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.9740
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:63A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.011ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissi

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (23-Jan-2024) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 140W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-251AA |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 63A |
| Drain Source On State Resistance | 0.014ohm |
| Gate Source Threshold Voltage Max | 2.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1298556/)

PD - 97175B 

## IRLR3110ZPbF IRLU3110ZPbF 

## **Features** 

Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax 

## **Description** 

Specifically designed for Industrial applications, this HEXFET[®] Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.  Additional features of this design  are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Industrial applications and a wide variety of other applications. 

## HEXFET[®] Power MOSFET 

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D<br>VDSS = 100V<br>G R  = 14m Ω<br>DS(on)<br>S<br>**----- End of picture text -----**<br>


D-Pak I-Pak IRLR3110ZPbF IRLU3110ZPbF 

## **Absolute Maximum Ratings** 

||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|ID@ TC= 25°C<br>~~Pe~~|Continuous Drain Current,VGS@ 10V(Silicon Limited)<br>~~Pe~~|63<br>|A<br>~~a~~|
|ID@ TC= 100°C <br>~~Pe~~|Continuous Drain Current,VGS@ 10V(Silicon Limited)<br>~~Pe~~|45<br>||
|ID@ TC= 25°C<br>~~Pe~~<br>~~©~~|Continuous Drain Current,VGS@ 10V(Package Limited)<br>~~Pea~~<br>~~©~~|42<br>~~a~~<br>~~©~~||
|IDM<br>~~©~~|Pulsed DrainCurrent<br>~~©~~|250<br>~~©~~<br>~~Q~~||
|PD@TC= 25°C<br>~~©~~|Power Dissipation<br>~~©~~<br>~~a~~|140<br>~~©~~<br>~~a~~<br>~~Q~~|W<br>~~a~~|
|~~a~~|Linear DeratingFactor<br>~~a~~<br>~~a~~|0.95<br>~~Q~~<br>~~a~~<br>~~ee~~|W/°C<br>~~a~~|
|VGS<br>~~a~~|Gate-to-Source Voltage<br>~~a~~<br>~~a~~<br>~~a~~<br>~~~~~<br>~~eo~~|±16<br>~~a~~<br>~~a~~<br>~~ee~~<br>~~eo~~<br>~~ese~~|V<br>~~a~~<br>~~a~~<br>~~e~~|
|EAS (Thermally limited)<br>~~a~~|Single Pulse Avalanche Energy<br>~~a~~<br>~~a~~<br>~~~~~<br>~~eo~~|110<br>~~a~~<br>~~ee~~<br>~~eo~~<br>~~ese~~|mJ<br>~~a~~<br>~~e~~|
|EAS(Tested )<br>~~a~~<br>~~a~~|Single Pulse Avalanche EnergyTested Value<br>~~a~~<br>~~~~~<br>~~eo~~<br>~~aes~~|140<br>~~ee~~<br>~~eo~~<br>~~ese~~<br>~~A~~||
|IAR<br>~~a~~|AvalancheCurrent<br>~~eo~~<br>~~aes~~|See Fig.12a, 12b, 15, 16<br>~~eo~~<br>~~ese~~<br>~~A~~|A<br>~~e~~|
|EAR<br>~~a~~|Repetitive Avalanche Energy<br>~~aes~~||mJ|
|TJ<br>TSTG<br>|Operating Junction and<br>Storage Temperature Range<br>~~es~~<br>~~po~~|-55  to + 175<br>~~A~~<br>~~po~~|°C<br>~~po~~|
||ReflowSolderingTemperature,for 10seconds<br>~~po~~|300<br>~~po~~||
||MountingTorque,6-32 or M3 screw<br>~~po~~<br>~~Qe~~|10 lbf in (1.1N m)<br>~~po~~<br>~~Qe~~|~~po~~<br>~~Qe~~|



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## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**<br>~~GO~~|**Typ.**<br>~~GO~~|**Max. **<br>~~GO~~|**Units**<br>~~GOGO~~|**Conditions**<br>~~GOGO~~|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~RD~~|100<br>~~RD~~<br>~~GO~~|–––<br>~~RD~~<br>~~GO~~|–––<br>~~RD~~<br>~~GO~~|V<br>~~RD~~<br>~~GOGO~~|VGS= 0V, ID= 250µA<br>~~RD~~<br>~~GOGO~~|
|∆V(BR)DSS/∆TJ|Breakdown Voltage Temp. Coefficient|–––<br>~~GO~~|0.077<br>~~GO~~|–––<br>~~GO ~~|V/°C<br> ~~GOGO~~|Reference to 25°C, ID= 1mA<br>~~GOGO~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~ee~~|–––<br>~~ee~~|11<br>~~PT~~<br>~~ee~~|14<br>~~PT~~<br>~~ee~~|mΩ<br>~~ee~~<br>~~GOGO~~|VGS= 10V, ID= 38A<br>©<br>~~ee~~|
|||–––<br>~~ee~~<br>~~G~~|12<br>~~ee~~<br>~~G~~|16<br>~~ee~~||VGS= 4.5V, ID= 32A<br>~~ee~~<br>~~GOGO~~|
|VGS(th)|Gate Threshold Voltage<br>~~ee~~<br>~~R~~|1.0<br>~~ee~~<br>~~R~~<br>~~G~~|–––<br>~~ee~~<br>~~R~~~~**D**~~<br>~~G~~|2.5<br>~~ee~~<br>~~**D**~~|V<br>~~ee~~<br>~~**D**~~<br>~~GOGO~~|VDS= VGS, ID= 100µA<br>~~ee~~<br>~~**D**~~<br>~~GOGO~~|
|gfs|Forward Transconductance<br>~~a~~|52<br>~~G~~|–––<br>~~G~~|–––<br>~~EE~~|S<br>~~GOGO~~<br>~~EE~~|VDS= 25V, ID= 38A<br>~~GOGO~~<br>~~EE~~|
|IDSS|Drain-to-Source Leakage Current<br>~~Be~~<br>~~a~~|–––<br>~~Be~~|–––<br>~~PT~~<br>~~Be~~|20<br>~~PT~~<br>~~Be~~<br>~~EE~~|µA<br>~~Be~~<br>~~EE~~|VDS= 100V, VGS= 0V<br>~~Be~~<br>~~EE~~|
|||–––<br>~~Be~~|–––<br>~~Be~~|250<br>~~Be~~<br>~~EE~~||VDS= 100V, VGS= 0V, TJ= 125°C<br>~~Be~~<br>~~EE~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~Be~~<br>~~a~~|–––<br>~~Be~~<br>~~a~~|–––<br>~~Be~~<br>~~ee~~|200<br>~~Be~~<br>~~EE~~|nA<br>~~Be~~<br>~~EE~~|VGS= 16V<br>~~Be~~<br>~~EE~~|
||Gate-to-Source Reverse Leakage<br>~~a~~|–––<br>~~a~~|–––<br>~~ee~~|-200<br>~~EE~~||VGS= -16V<br>~~EE~~|
|Qg|Total Gate Charge<br>~~ee~~|–––<br>~~a~~<br>~~ee~~|34<br>~~ee~~<br>~~ee~~|48<br>~~ee~~|nC|VDS= 50V<br>ID= 38A<br>VGS= 4.5V<br>~~©~~|
|Qgs|Gate-to-Source Charge<br>~~en~~<br>~~ee~~|–––<br>~~en~~|10<br>~~en~~|–––<br>~~en~~|||
|Qgd|Gate-to-Drain("Miller")Charge<br>~~ee~~|–––|15|–––|||
|td(on)|Turn-On DelayTime<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|24<br>~~ee~~|–––<br>~~ee~~|ns<br>~~|~~|VGS= 4.5V<br>VDD= 50V<br>ID= 38A<br>RG= 3.7Ω<br>~~©~~<br>~~©~~<br>~~|~~|
|tr|Rise Time<br>~~ee~~|–––<br>~~ee~~|110<br>~~ee~~|–––<br>~~ee~~|||
|td(off)|Turn-Off DelayTime<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|33<br>~~ee~~|–––<br>~~ee~~|||
|tf|Fall Time<br>~~ee~~|–––<br>~~+7~~|48<br>~~+7~~|–––<br>~~+7 |~~|||
|LD|Internal Drain Inductance<br>~~ee~~<br>~~——~~|–––<br>~~——~~<br>~~+7~~|4.5<br>~~——~~<br>~~+7~~|–––<br>~~——~~<br>~~+7 |~~|nH<br>~~——~~<br>~~|~~|S<br>D<br>G<br>Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>~~©~~<br>~~——~~<br>~~|~~|
|LS|Internal Source Inductance<br>~~——~~|–––<br>~~——~~<br>~~+7~~|7.5<br>~~——~~<br>~~+7~~|–––<br>~~——~~<br>~~+7 |~~|||
|Ciss|Input Capacitance<br>~~——~~<br>~~es~~|–––<br>~~——~~<br>~~+7~~<br>~~es~~|3980<br>~~——~~<br>~~+7~~<br>~~es~~|–––<br>~~——~~<br>~~+7 |~~<br>~~es~~|pF<br>~~——~~<br>~~|~~|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz<br>~~——~~<br>~~|~~|
|Coss|Output Capacitance<br>~~ee~~|–––<br>~~+7~~<br>~~ee~~|310<br>~~+7~~<br>~~ee~~|–––<br>~~+7 |~~<br>~~ee~~|||
|Crss|Reverse Transfer Capacitance<br>~~ee~~|–––<br>~~ee~~|130<br>~~ee~~|–––<br>~~ee~~|||
|Coss|Output Capacitance<br>~~ee~~|–––<br>~~ee~~|1820<br>~~ee~~|–––<br>~~ee~~||VGS= 0V,  VDS= 1.0V,ƒ= 1.0MHz|
|Coss<br>~~a~~|Output Capacitance<br>~~ee~~<br>~~a~~|–––<br>~~ee~~|170<br>~~ee~~|–––<br>~~ee~~||VGS= 0V,  VDS= 80V,ƒ= 1.0MHz<br>~~@~~|
|Cosseff.<br>~~a~~|Effective Output Capacitance<br>~~a~~|–––|320|–––||VGS= 0V, VDS= 0V to 80V<br>~~@~~|



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1000<br>VGS<br>TOP           15V<br>10V<br>100 r T 8.0V4.5V<br>3.5V<br>3.0V<br>2.7V<br>10 Z a ee BOTTOM 2.5V<br>=<br>eee ts eee cee ie<br>1<br>M D<br>poo Pe ee<br>0.1<br>2.5V<br>≤ 60µs PULSE WIDTH<br>Tj = 25°C<br>0.01 Sa a+<br>0.1 1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br>1000<br>Py<br>100 TJ = 175°C<br>HS<br>10 PH<br>o e<br>| es ee ee ee ee ee eee<br>1 TJ = 25°C<br>2 e ee<br>=a VDS = 25V<br>≤ 60µs PULSE WIDTH<br>Ae, aint<br>0.1<br>0 2 4 6 8 10 12 14 16<br>VGS, Gate-to-Source Voltage (V)<br>) (Α<br>ID, Drain-to-Source Current<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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1000<br>VGS<br>TOP           15V<br>10V<br>8.0V<br>AE 4.5V<br>3.5V<br>3.0V<br>100 2.7V<br>a BOTTOM 2.5V<br>Seem 4M en<br>Se GLTLUEMAIil<br>10 | yr<br>2.5V<br>> {i eg et ee<br>≤ 60µs PULSE WIDTH<br>Tj = 175°C<br>1 TUN ETH<br>0.1 1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 2.** Typical Output Characteristics 

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150<br>TJ = 25°C<br>125<br>|<br>fe<br>10075 [Of TJ = 175°C<br>:<br>5025 S f / VDS = 10V<br>300µs PULSE WIDTH<br>G Y<br>0<br>0 25 50 75<br>ID,Drain-to-Source Current (A)<br>Gfs, Forward Transconductance (S)<br>**----- End of picture text -----**<br>


**Fig 4.** Typical Forward Transconductance vs. Drain Current 

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100000 5.0<br>VCGS  iss   = C = 0V,       f = 1 MHZgs + Cgd,  C ds SHORTED ID= 38A<br>C  = C<br>rss   gd  4.0<br>10000 SE Coss   = Cds + Cgd ef ee ea VDS= 80V | V/<br>C VDS= 50V<br>iss<br>3.0<br>SS Sa — |Y<br>1000<br>C<br>oss<br>e ee EN 2.0 w a |<br>a Crss a ee Sl<br>100<br>1.0<br>ee ee<br>10 0.0<br>1 10 100 0 10 20 30 40<br>VDS, Drain-to-Source Voltage (V)  QG  Total Gate Charge (nC)<br>Fig 5.   Typical Capacitance vs. Fig 6.   Typical Gate Charge vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>1000 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>T = 175°C<br>100 | | J  IA7Z | | Pt A<br>S aas 4a = 100 ETA 100µsec A |<br>TJ = 25°C 1 m sec<br>10 i— ——— oe eee ee ilA ol<br>10msec<br>ee) ee ——— 10 a ll<br>ae al DC oe lt|<br>1<br>Tc = 25°C<br>ei VGS = 0V Tj = 175°CSingle Pulse }<br>ee o n TE C o<br>0.1 1<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 1 10 100 1000<br>VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)<br>C, Capacitance(pF)<br>VGS, Gate-to-Source Voltage (V)<br>ISD, Reverse Drain Current (A) ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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70 3.0<br>ID = 63A<br>60 T T Limited By Package VGS = 10V TH<br>2.5<br>50 P Rx sk SeReuara/<br>An e 2.0 P ETE<br>40<br>Pe A<br>30<br>: 1.5 P T LET LIL<br>NCE} E RED<br>20 Pt tT | IAL C eALLL<br>1.0<br>C OON] A e<br>10 EN PECL ELELLLLU<br>0 PP \ 0.5 ERP ZEReeeeee<br>25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100120140160180<br> TC , Case Temperature (°C) TJ , Junction Temperature (°C)<br>Fig 9.   Maximum Drain Current vs. Fig 10.   Normalized On-Resistance<br>Case Temperature vs. Temperature<br>10<br>1 p t|<br>D = 0.50<br>0.20 rr<br>0.1 0.10 oe R1 R1 R2 R2 nT Ri (°C/W)     τ i (sec)<br>—S 0.020.05 S τ J τ ee J τ 1 τ 1 τ 2 τ 2 τ C τ 0.383       0.0002670.667       0.003916 LEFt<br>0.01 et 0.01 Ci=  τ i / Ri<br>Ci i / Ri<br>SINGLE PULSE Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>A ee 2. Peak Tj = P dm x Zthjc + Tc Hl<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>ID,  Drain Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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300<br>15V<br>ID<br>TOP         4.4A<br>250<br>VDS L DRIVER 6.5A<br>BOTTOM 38A<br>M E<br>200<br>RG D.U.T +<br>- [V][DD]<br>IAS A 150<br>vol 20VVGS l NB NSREREN ELL<br>tp 0.01 Ω<br>100<br> Unclamped Inductive Test Circuit C SS<br>V(BR)DSS(BR)DSS<br>50<br>_ tp T RS<br>0<br>; 25 ELLE 50 75 100 ESMAL 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>AS<br>Fig 12c.   Maximum Avalanche Energy<br> Unclamped Inductive Waveforms<br>vs. Drain Current<br>QG<br>10 V [n] [n,]<br>QGS QGD 3.0<br>a T OTTI<br>VG / 2.5 P PE CRECTTTTEE<br>2.0 P RP RE<br>Charge<br>> C ASSES<br> Basic Gate Charge Waveform 1.5<br>ID = 100µA<br>ID = 250µA ZanNNe<br>1.0 IIDD  = 1.0mA= 1.0A NN<br>L 0.5 | APESSRSEEN<br>DUT | VCC PERE EEE EE<br>0.0<br>1K -75 -50 -25 0 25 50 75 100 125 150 175 200<br>TJ , Temperature ( °C )<br>ned es<br>EAS , Single Pulse Avalanche Energy (mJ)<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit V(BR)DSS(BR)DSS _ tp ; IAS 

**Fig 12b.** Unclamped Inductive Waveforms 

**Fig 13a.** Basic Gate Charge Waveform 

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L<br>DUT | VCC<br>0<br>1K<br>ned<br>Fig 13b.   Gate Charge Test Circuit<br>6<br>**----- End of picture text -----**<br>


**Fig 14.** Threshold Voltage vs. Temperature 

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100<br>Allowed avalanche Current vs avalanche<br>SSS Duty Cycle = Single Pulse Seer a on ee eeeeeeee|<br>pulsewidth, tav, assuming  ∆ Tj = 150°C and<br>—<br>0.01 Seah ees Tstart =25°C (Single Pulse)<br>10<br>FE 0.050.10 4 S HR<br>e e an: | |<br>PAZ 77SN<br>Allowed avalanche Current vs avalanche<br>1<br>pulsewidth, tav, assuming  ∆Τ j = 25°C and<br>Tstart = 150°C.<br>= seey eer<br>| Dee ee ee eee<br>PT Te<br>PTE EEEE<br>0.1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 15.   Typical Avalanche Current vs.Pulsewidth<br>150 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>TOP          Single Pulse                 (For further info, see AN-1005 at www.irf.com)<br>BOTTOM   1% Duty Cycle 1. Avalanche failures assumption:<br>125 ID = 38A   Purely a thermal phenomenon and failure occurs at a<br>    temperature far in excess of Tjmax. This is validated for<br>    every part type.<br>100 2. Safe operation in Avalanche is allowed as long as<br>  neither Tjmax nor Iav (max) is exceeded.<br>N N 3. Equation below based on circuit and waveforms shown in<br>75<br>  Figures 12a, 12b.<br>> Ne NQ 4. PD (ave) = Average power dissipation per single<br>    avalanche pulse.<br>50<br>5. BV = Rated breakdown voltage (1.3 factor accounts for<br>L IN NET<br>    voltage increase during avalanche).<br>25 6. Iav = Allowable avalanche current.<br>7.  ∆ T = Allowable rise in junction temperature, not to exceed<br>C OPS     Tjmax (assumed as 25°C in Figure 15, 16).<br>0 ELEY ANN   tav = Average time in avalanche.<br>25 50 75 100 125 150 175   D = Duty cycle in avalanche =  tav ·f<br>  ZthJC(D, tav) = Transient thermal resistance, see figure 11)<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 16.** Maximum Avalanche Energy vs. Temperature 

**PD (ave) = 1/2 ( 1.3·BV·Iav) =** A **T/ ZthJC Iav = 2** A **T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav** 

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Driver Gate Drive<br>P.W.<br>D.U.T + {¢$ P.W. Period —— | D = —— Period<br>) [©)]    •  Circuit Layout Considerations | t V i GS=10V<br>| — -  •   GroundLow StrayPlane Inductance<br> •   CurrentLow LeakageTransformerInductance @ D.U.T. ISD Waveform<br>+<br>= ReverseRecovery Body Diode Forward \<br>- a - ® + Current r Current di/dt 7<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘ ’<br>00 - VDD<br>ay<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( a •   dvidt controlledIsp controlled bybyDuty Re Factor "D" Vop - ® Inductor Curent<br>•<br>D.U.T. - Device Under Test Ripple  ≤ 5% e s ISD ee<br>**----- End of picture text -----**<br>


## **Fig 17.** Peak Diode Recovery dv/dt Test HEXFET ® Power MOSFETs 

## for N-Channel 

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**Fig 18a.** Switching Time Test Circuit 

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VDS<br>90%<br>10%<br>VGS | |<br>lee >! able<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 18b.** Switching Time Waveforms 

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TR TRR TRL<br>eeooo¢oo\ | oeoo/|<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>- -<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>NOTES :<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>**----- End of picture text -----**<br>


2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 

3.  OUTLINE CONFORMS TO EIA-481 & EIA-541. 

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  13 INCH<br>**----- End of picture text -----**<br>


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16 mm<br>**----- End of picture text -----**<br>


NOTES : 

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1. OUTLINE CONFORMS TO EIA-481.<br>**----- End of picture text -----**<br>


Notes: ® Repetitive rating;  pulse width limited by © Limited by TJmaxJmax , see Fig.12a, 12b, 15, 16 for typical repetitive max. junction temperature. (See fig. 11). 

© Limited by TJmaxJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. 

) Limited by TJmax, starting TJ = 25°C, L = 0.16mH © RG = 25 Ω , IAS = 38A, VGS =10V. Part not recommended for use above this value. @ ® Pulse width ≤ 1.0ms; duty cycle ≤ 2%. iC) Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . 

This value determined from sample failure population. 100% tested to this value in production. 

When mounted on 1" square PCB (FR-4 or G-10 Material). R_ θ is measured at Ty approximately 90°C. 

Data and specifications subject to change without notice. This product has been designed  for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 11/09 

www.irf.com 

11 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRLU3110ZPBF/power-mosfet-n-channel-100-v-63-a-0014-ohm-to)
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- [Supplier page](https://es.farnell.com/infineon/irlu3110zpbf/mosfet-n-100v-i-pak/dp/1298556)
---

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