# Power MOSFET, N Channel, 55 V, 60 A, 0.011 ohm, TO-251AA, Through Hole

![Product image](https://novapart.co/image/farnell:1688591/)

**URL**: https://novapart.co/products/IRLU2905ZPBF/power-mosfet-n-channel-55-v-60-a-0011-ohm-to-251aa
**SKU**: IRLU2905ZPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3750
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 110W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 110W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.011ohm |
| Transistor Case Style | TO-251AA |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 60A |
| Drain Source On State Resistance | 0.011ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1688591/)

PD - 95774B 

## IRLR2905ZPbF IRLU2905ZPbF 

## **Features** 

Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free 

## HEXFET[®] Power MOSFET 

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D<br>VDSS = 55V<br>R  = 13.5m Ω<br>DS(on)<br>G<br>ID = 42A<br>S<br>**----- End of picture text -----**<br>


## **Description** 

This HEXFET[®] Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. 

||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V(Silicon Limited)<br>~~**a**~~|60<br>~~**a**~~|A<br>~~7~~<br>|
|ID@ TC= 100°C|Continuous Drain Current, VGS@ 10V<br>~~**a**~~|43<br>~~**a**~~||
|ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V(Package Limited)<br>~~**a**~~<br>~~a~~|42<br>~~**a**~~<br>~~a~~||
|IDM<br>~~Le~~|Pulsed Drain Current<br>~~**a**~~<br>~~Le~~|240<br>~~**a**~~<br>||
|PD@TC= 25°C<br>~~Le~~|Power Dissipation<br>~~Le~~|110<br>|W<br>|
|~~Le~~|Linear Derating Factor<br>~~LeLe~~|0.72<br>~~Le~~|W/°C<br>~~Le~~|
|VGS<br>|Gate-to-Source Voltage<br>~~Le~~|± 16<br>~~Le~~|V<br>~~Le~~|
|EAS (Thermally limited)|Single Pulse Avalanche Energy<br>~~2~~<br>~~re~~|57<br>~~2~~<br>~~re~~|mJ<br>~~re~~|
|EAS(Tested )|Single Pulse Avalanche Energy Tested Value<br>~~re~~|85<br>~~re~~||
|IAR|Avalanche Current<br>~~oo~~|See Fig.12a, 12b, 15, 16|A|
|EAR|Repetitive Avalanche Energy<br>~~re~~||mJ|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range<br>~~re~~|-55  to + 175|°C|
|~~Le~~|Soldering Temperature, for 10 seconds<br>~~re~~<br>~~Le~~|300 (1.6mm from case )<br>||
|~~Le~~|Mounting Torque, 6-32 or M3 screw<br>~~re~~<br>~~Le~~|10 lbf in (1.1N m)<br>||



HEXFET[®] is a registered trademark of International Rectifier. 

www.irf.com 

1 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~GO~~|55<br>~~GO~~<br>~~Gs~~|–––<br>~~GO~~<br>~~es~~|–––|V<br>~~QO~~|VGS= 0V, ID= 250µA<br>~~QO~~|
|∆V(BR)DSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~GO~~<br>~~re~~|–––<br>~~GO~~<br>~~re~~<br>~~Gs~~|0.053<br>~~GO~~<br>~~re~~<br>~~es~~|–––<br>~~re~~|V/°C<br>~~QO~~<br>~~re~~|Reference to 25°C, ID= 1mA<br>~~QO~~<br>~~re~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~Pe~~|–––<br>~~Gs ~~<br>~~Pe~~<br>~~Gn~~|11<br> ~~es~~<br>~~Pe~~<br>~~Gn~~|13.5<br>~~Pe~~|mΩ<br>~~Pe~~|VGS= 10V, ID= 36A<br>~~Pe~~<br>~~©~~|
||~~Pe~~<br>~~Rs~~|–––<br>~~Pe~~<br>~~Rs~~<br>~~Gn~~<br>~~Gs~~|–––<br>~~Pe~~<br>~~Rs~~<br>~~Gn~~<br>~~rs~~|20<br>~~Pe~~<br>~~Rs~~|mΩ<br>~~Pe~~<br>~~Rs~~|VGS= 5.0V, ID= 30A<br>~~Pe~~<br>~~Rs~~<br>~~©~~<br>~~©~~|
||~~Rs~~<br>~~Pn~~|–––<br>~~Rs~~<br>~~Gn~~<br>~~Pn~~<br>~~Gs~~|–––<br>~~Rs~~<br>~~Gn~~<br>~~Pn~~<br>~~rs~~|22.5<br>~~Rs~~<br>~~Pn~~|mΩ<br>~~Rs~~<br>~~Pn~~|VGS= 4.5V, ID= 15A<br>~~Rs~~<br>~~©~~<br>~~Pn~~<br>~~©~~|
|VGS(th)|Gate Threshold Voltage|1.0<br>~~Gs ~~|–––<br> ~~rs~~|3.0|V|VDS= VGS, ID= 250µA<br>~~©~~|
|gfs|Forward Transconductance|25<br>~~|~~<br>~~rene~~|–––<br>~~|~~<br>~~rene~~|–––<br>~~eee~~|S<br>~~eee eee~~|VDS= 25V, ID= 36A<br>~~eee~~|
|IDSS|Drain-to-Source Leakage Current<br>~~ee~~|–––<br>~~|~~<br>~~ee~~<br>~~rene~~|–––<br>~~|~~<br>~~ee~~<br>~~rene~~|20<br>~~ee~~<br>~~eee~~|µA<br>~~ee~~<br>~~eee eee~~|VDS= 55V, VGS= 0V<br>~~ee~~<br>~~eee~~|
|||–––<br>~~|~~<br>~~ee~~<br>~~rene~~|–––<br>~~|~~<br>~~ee~~<br>~~rene~~|250<br>~~ee~~<br>~~eee~~||VDS= 55V, VGS= 0V, TJ= 125°C<br>~~ee~~<br>~~eee~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~ee~~<br>~~——F~~|–––<br>~~ee~~<br>~~rene~~<br>~~——F~~|–––<br>~~ee~~<br>~~rene ~~<br>~~——F~~|200<br>~~ee~~<br> ~~eee~~<br>~~——F~~|nA<br>~~ee~~<br>~~eee eee~~<br>~~——F~~|VGS= 16V<br>~~ee~~<br>~~eee~~<br>~~——F~~|
||Gate-to-Source Reverse Leakage<br>~~——F~~|–––<br>~~——F~~<br>~~FT|~~<br>~~ee~~|–––<br>~~——F~~<br>~~FT|~~<br>~~ee~~|-200<br>~~——F~~<br>~~FT|~~||VGS= -16V<br>~~——F~~|
|Qg|Total Gate Charge<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~ee~~<br>~~ee~~<br>|23<br>~~es~~<br>~~ee~~<br>~~ee~~<br>|35<br>~~es~~|nC|VDS= 44V<br>VGS= 5.0V<br>ID= 36A<br>eg)|
|Qgs|Gate-to-Source Charge<br>~~es~~<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~<br>|8.5<br>~~ee~~<br>~~es~~<br>~~ee~~<br>|–––<br>~~es~~|||
|Qgd|Gate-to-Drain("Miller")Charge<br>~~es ~~|–––<br>~~ee~~<br> ~~ee~~<br>~~ee~~|12<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––|||
|td(on)|Turn-On DelayTime<br>~~es ~~<br>~~es~~|–––<br>~~ee~~<br> <br>~~es~~<br>~~ee~~<br>~~ee~~|14<br>~~ee~~<br><br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|ns|VGS= 5.0V<br>VDD= 28V<br>ID= 36A<br>RG= 15Ω<br>@<br>3|
|tr|Rise Time<br>~~es~~<br>~~ee~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|130<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|||
|td(off)<br>~~Pe~~|Turn-Off DelayTime<br>~~es~~<br>~~ee~~<br>~~Pe~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|24<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|||
|tf<br>~~Pe~~|Fall Time<br>~~ee~~<br>~~Pe~~|–––<br>~~ee~~<br>~~ee~~|33<br>~~ee~~<br>~~ee~~|–––|||
|LD<br>~~Pe~~|Internal Drain Inductance<br>~~ee~~<br>~~Pe~~<br>~~FF~~|–––<br>~~ee~~<br>~~ee~~<br>~~FF~~|4.5<br>~~ee~~<br>~~ee~~<br>~~FF~~|–––<br>~~FF~~|nH<br>~~FF~~|S<br>D<br>G<br>Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>@<br>3<br>~~&~~|
|LS<br>~~Pe~~|Internal Source Inductance<br>~~Pe~~<br>~~FF~~|–––<br>~~ee ~~<br>~~FF~~<br>~~ee~~|7.5<br> ~~ee~~<br>~~FF~~<br>~~ee~~|–––<br>~~FF~~|||
|Ciss|Input Capacitance<br>~~es~~|–––<br>~~es~~<br>~~ee~~<br>~~ee~~|1570<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|pF|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz|
|Coss|Output Capacitance<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|230<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|||
|Crss|Reverse Transfer Capacitance<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|130<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|||
|Coss|Output Capacitance<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~|840<br>~~ee~~<br>~~es~~<br>~~ee~~|–––<br>~~es~~||VGS= 0V,  VDS= 1.0V,ƒ= 1.0MHz|
|Coss|Output Capacitance<br>~~ee~~<br>~~es~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|180<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~||VGS= 0V,  VDS= 44V,ƒ= 1.0MHz<br>~~@~~|
|Cosseff.|Effective Output Capacitance<br>~~es~~|–––<br>~~ee~~|290<br>~~ee~~|–––||VGS= 0V, VDS= 0V to 44V<br>~~@~~|



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1000 1000<br>VGS VGS<br>TOP           10V TOP           10V<br>9.0V 9.0V<br>7.0V 7.0V<br>5.0V 5.0V<br>ae eee 4.5V TN} | EL 4.5V<br>100 4.0V 100 4.0V<br>3.5V 3.5V<br>P| B e BOTTOM yy 3.0V e e e BOTTOM 3.0V<br>Yr tit } | | gp mt |<br>10 10<br>3.0V<br>≤  60µs PULSE WIDTH ≤  60µs PULSE WIDTH<br>3.0V Tj = 25°C Tj = 175°C<br>1 p enean TTT| 1 aieet ee TTT<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>1000.0 60<br>=S==ee=> TJ = 25°C 50 Ty. TJ = 175°C<br>100.0 a TJ = 175°C 40 4<br>| |jaerr a<br>PT TA P g =<br>rT eItf7i; | [| | ft 30 // TJ = 25°C<br>10.0 i Kf<br>20 \<br>VDS = 10V 10<br>≤  60µs PULSE WIDTH VDS = 8.0V<br>1.0 ey 380µs PULSE WIDTH<br>LE [<br>2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0<br>0 10 20 30 40 50<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>Gfs, Forward Transconductance (S)<br>) (Α<br>ID, Drain-to-Source Current<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Typical Forward Transconductance Vs. Drain Current 

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2500 VCGS  iss   = C = 0V,       f = 1 MHZgs + Cgd,  C ds SHORTED 12 ID= 36A<br>2000 Crss    = Cgd  10 VDS= 44V<br>Coss   = Cds + Cgd VDS= 28V<br>VDS= 11V<br>Ciss 8<br>1500<br>So o fe<br>6<br>1000<br>=A<br>4<br>500 2<br>e Coss ea<br>Crss<br>0 ee } 0<br>1 10 100 0 10 20 30 40 50<br> QG  Total Gate Charge (nC)<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>1000.0 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)(on)<br>100.0 100<br>TJ = 175°C<br>10.0 10<br>100µsec<br>T = 25°C<br>J<br>1msec<br>1.0 1<br>Tc = 25°C 10msec<br>Tj = 175°C<br>VGS = 0V Single Pulse<br>0.1 0.1<br>0.2 0.6 1.0 1.4 1.8 2.2 1 10 100<br>VSD, Source-to-Drain Voltage (V) VDS  , Drain-toSource Voltage (V)<br>ISD, Reverse Drain Current (A) ID,  Drain-to-Source Current (A)<br>VGS, Gate-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


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1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)(on)<br>100<br>10<br>100µsec<br>1msec<br>1<br>Tc = 25°C 10msec<br>Tj = 175°C<br>Single Pulse<br>0.1<br>1 10 100 1000<br>VDS  , Drain-toSource Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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60 2.0<br>LIMITED BY PACKAGE ID = 30A<br>50 VGS = 5.0V<br>Zan n V4<br>40 : 1.5 F it<br>PN \ GoeenneaeYY<br>30<br>PN Y<br>20 LEE<br>1.0<br>P E LAO<br>10<br>P EP LN PRT<br>0<br>0.5<br>25 50 75 100 TIN 125 150 175 = ETT<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br> TC , Case Temperature (°C)<br>TJ , Junction Temperature (°C)<br>Fig 9.   Maximum Drain Current Vs. Fig 10.   Normalized On-Resistance<br>Case Temperature Vs. Temperature<br>10<br>es ee ee<br>1<br>a D = 0.50 [aS]<br>0.20<br>0.1 e 0.10 e —_at R1 R1 R2 R2 ee Ri (°C/W)     τ i (sec)<br>0.05 τ J τ J τ C τ 0.765       0.000269<br>0.020.01 ce ee ee ee ee eee τ 1 τ 1 τ 2 τ 2 0.6141     0.001614<br>0.01 Ss e eee Ci=  T τ i / Ri T<br>Ci i / Ri<br>o e 2 a0ll eeeee<br>SINGLE PULSE Notes:<br>1. Duty Factor D = t1/t2<br>PF | ( THERMAL RESPONSE ) a 2. Peak Tj = P dm x Zthjc + Tc<br>Fe e H<br>0.001<br>pe ee ee eee<br>1E-006 1E-005 0.0001 0.001 0.01<br>t1 , Rectangular Pulse Duration (sec)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>ID , Drain Current (A)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>f<br>20VVGS<br>tp 0.01 Ω<br>P y,<br>Fig 12a.   Unclamped Inductive Test Circuit<br>V(BR)DSS<br>tp<br>a<br>**----- End of picture text -----**<br>


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240<br>                 I<br>D<br>TOP          36A<br>200<br>               6.2A<br>BOTTOM   4.3A<br>aW i<br>160<br>120<br>A CE<br>80 N NER<br>400 || [SS<br>25 50 75 100 125 150 175<br>PNT<br>Starting TJ, Junction Temperature (°C)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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IAS<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

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QG<br>QGS QGD 3.0<br>VG<br>2.5<br>Charge<br>Fig 13a.   Basic Gate Charge Waveform 2.0 ID = 250µA<br>Current Regulator<br>Same Type as D.U.T.<br>50K Ω 1.5<br>12V .2 µ F<br>.3 µ F<br>+<br>D.U.T. -VDS<br>1.0<br>VGS -75 -50 -25 0 25 50 75 100 125 150 175<br>Tae | Hi<br>3mA TJ , Temperature ( °C )<br>ot<br>IG ID<br>Current Sampling Resistors<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 13b.** Gate Charge Test Circuit 

**Fig 14.** Threshold Voltage Vs. Temperature 

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1000<br>Duty Cycle = Single Pulse<br>100 Allowed avalanche Current vs<br>avalanche  pulsewidth,  tav<br>0.01 assuming  ∆ Tj = 25°C due to<br>avalanche losses. Note: In no<br>10 0.05 case should Tj be allowed to<br>exceed Tjmax<br>0.10<br>1<br>0.1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02<br>tav (sec)<br>Fig 15.   Typical Avalanche Current Vs.Pulsewidth<br>60 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>TOP          Single Pulse                 (For further info, see AN-1005 at www.irf.com)<br>BOTTOM   1% Duty Cycle 1. Avalanche failures assumption:<br>50 ID = 36A   Purely a thermal phenomenon and failure occurs at a<br>N e     temperature far in excess of Tjmax. This is validated for<br>    every part type.<br>40<br>2. Safe operation in Avalanche is allowed as long asTjmax is<br>  not exceeded.<br>30 3. Equation below based on circuit and waveforms shown in<br>P ANT   Figures 12a, 12b.<br>4. PD (ave) = Average power dissipation per single<br>20     avalanche pulse.<br>B RRRRNNGHEEE<br>5. BV = Rated breakdown voltage (1.3 factor accounts for<br>    voltage increase during avalanche).<br>10 6. Iav = Allowable avalanche current.<br>E NN 7.  ∆ T = Allowable rise in junction temperature, not to exceed<br>0 T TS     Tjmax (assumed as 25°C in Figure 15, 16).<br>  tav = Average time in avalanche.<br>25 50 75 100 125 150 175   D = Duty cycle in avalanche =  tav ·f<br>Starting TJ , Junction Temperature (°C)   ZthJC(D, tav) = Transient thermal resistance, see figure 11)<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 16.** Maximum Avalanche Energy Vs. Temperature 

**PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2 T/ [1.3·BV·Zth]** 

- **EAS (AR) = PD (ave)·tav** 

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Driver Gate Drive<br>P.W.<br>D.U.T + {¢$ P.W. Period —— | D = —— Period<br>) [©)]    •  Circuit Layout Considerations | t V i GS=10V<br>| — -  •   GroundLow StrayPlane Inductance<br> •   CurrentLow LeakageTransformerInductance @ D.U.T. ISD Waveform<br>+<br>= ReverseRecovery Body Diode Forward \<br>- a - ® + Current r Current di/dt 7<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘ ’<br>00 - VDD<br>ay<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( a •   dvidt controlledIsp controlled bybyDuty Re Factor "D" Vop - ® Inductor Curent<br>•<br>D.U.T. - Device Under Test Ripple  ≤ 5% e s ISD ee<br>**----- End of picture text -----**<br>


## **Fig 17.** Peak Diode Recovery dv/dt Test HEXFET ® Power MOSFETs 

## for N-Channel 

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-<br>≤ 1  ys<br>≤ 0.1 %<br>**----- End of picture text -----**<br>


**Fig 18a.** Switching Time Test Circuit 

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VDS<br>90%<br>10%<br>VGS | |<br>lee >! able<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 18b.** Switching Time Waveforms 

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EXAMPLE: THIS IS AN IRFR120<br>WITH ASSEMBLYLOT CODE 1234 INTERNATIONALRECTIFIER cg IRFR120 N PART NUMBERDATE CODE<br>ASSEMBLED ON WW 16, 2001 LOGO 116A YEAR 1 =  2001<br>IN THE ASSEMBLY LINE "A" 12 34 WEEK 16<br>LINE A<br>Note: "P" in assembly line positionindicates "Lead-Free" ASSEMBLYLOT CODE i a t<br>"P" in assembly line position indicates<br>"Lead-Free" qualification to the consumer-level<br>PART NUMBER<br>INTERNATIONAL gO<br>OR RECTIFIER IRFR120 P =  DESIGNATES LEAD-FREEDATE CODE<br>LOGO PRODUCT (OPTIONAL)<br>12 34 P =  DESIGNATES LEAD-FREE<br>ASSEMBLYLOT CODE UY PRODUCT QUALIFIED TO THECONSUMER LEVEL (OPTIONAL)<br>YEAR 1 =  2001<br>WEEK 16<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


## **Notes:** 

## **1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** www.irf.com 

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EXAMPLE: THIS IS AN IRFU120 PART NUMBER<br>WITH ASSEMBLYLOT CODE 5678ASSEMBLED ON WW 19, 2001 INTERNATIONALRECTIFIERLOGO gE 56IRFU120119A78 DATE CODEYEAR 1 =  2001WEEK 19<br>IN THE ASSEMBLY LINE "A"<br>LINE A<br>ASSEMBLY<br>LOT CODE<br>Note: "P" in assembly line position<br>indicates Lead-Free"<br>OR<br>PART NUMBER<br>INTERNATIONAL gE<br>RECTIFIER IRFU120 DATE CODE<br>LOGO P =  DESIGNATES LEAD-FREE<br>56 78 PRODUCT (OPTIONAL)<br>ASSEMBLY YEAR 1 =  2001<br>LOT CODE WEEK 19<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


## **Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

www.irf.com 

10 

**==> picture [282 x 242] intentionally omitted <==**

**----- Start of picture text -----**<br>
TR TRR TRL<br>eoeoeogeoo\ 4 eeoo/4<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>CECE, GIO),<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>NOTES :<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).<br>3.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>|   13 INCH<br>16 mm<br>mN se] be<br>**----- End of picture text -----**<br>


**==> picture [24 x 5] intentionally omitted <==**

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1. OUTLINE CONFORMS TO EIA-481. 

Coss eff. is a fixed capacitance that gives the same charging time 

Repetitive rating;  pulse width limited by max. junction temperature. (See fig. 11). 

as Coss while VDS is rising from 0 to 80% VDSS . 

- @ Limited by TJmax, starting TJ = 25°C, L = 0.089mH ® Limited by TJmaxJmax , see Fig.12a, 12b, 15, 16 for typical repetitive RG = 25 Ω , IAS = 36A, VGS =10V. Part not avalanche performance. 

   - ® Limited by TJmaxJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. 

recommended for use above this value. 

- © This value determined from sample failure population. 100% tested to this value in production. 

® Pulse width ≤ 1.0ms; duty cycle ≤ 2%. tested to this value in production. @ 

- @ When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994 

   - θ[is measured at T] J[ approximately 90°C] 

Data and specifications subject to change without notice. This product has been designed  for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 10/2010 

www.irf.com 

11 



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- [View this product on Novapart](https://novapart.co/products/IRLU2905ZPBF/power-mosfet-n-channel-55-v-60-a-0011-ohm-to-251aa)
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- [Supplier page](https://es.farnell.com/en-ES/infineon/irlu2905zpbf/mosfet-n-ch-55v-i-pak/dp/1688591)
---

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