# Power MOSFET, N Channel, 30 V, 8.3 A, 0.0175 ohm, TSOP, Surface Mount

![Product image](https://novapart.co/image/farnell:3155165/)

**URL**: https://novapart.co/products/IRLTS6342TRPBF/power-mosfet-n-channel-30-v-83-a-00175-ohm-tsop
**SKU**: IRLTS6342TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1310
**Stock**: 1000+
**Lead Time**: 64 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:8.3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.014ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.1V; Power D

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 2W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | TSOP |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 8.3A |
| Drain Source On State Resistance | 0.0175ohm |
| Gate Source Threshold Voltage Max | 1.1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3155165/)

## IRLTS6342PbF 

HEXFET Power MOSFET 

|**VDS**|**30**|**V**||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**VGS**|**±12**|**V**||||||||||||
|**RDS(on) max**<br>(@VGS= 4.5V)<br>**RDS(on) max**<br>(@VGS= 2.5V)<br>**Qg (typical)**|**17.5**<br>**22.0**<br>**11**|**m**Ω<br>**m**Ω<br>**nC**||G<br>D<br>D<br>3<br>1<br>2|||||||S<br>D<br>D<br>4<br>6<br>5||TSOP-6|
|**ID**<br>(@TA=  25°C)|**8.3**|**A**||||||||||||



## **Applications** 

- 

## **Features and Benefits** 

**Features** Industry-Standard TSOP-6 Package RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Consumer Qualification 

## **Resulting Benefits** 

Multi-Vendor Compatibility ⇒ Environmentally Friendlier Increased Reliability 

|**Orderable part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Note**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|IRLTS6342TRPBF|TSOP-6|Tape and Reel|**Quantity**<br>3000||



## **Absolute Maximum Ratings** 

|**Absolute Maximum Ratings**|**Absolute Maximum Ratings**<br>**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VDS|Drain-to-Source Voltage|30|V<br>~~a~~<br>~~ee~~<br>~~ee~~|
|VGS|Gate-to-Source Voltage<br>~~a~~<br><br>~~ee~~|±12<br>~~a~~<br><br>~~ee~~||
|ID@ TA= 25°C|Continuous Drain Current, VGS@ 4.5V<br>~~a~~<br><br>~~ee~~|8.3<br>~~a~~<br><br>~~ee~~|A<br>~~a~~<br>~~a~~<br>~~aee~~<br>~~ee~~|
|ID@ TA= 70°C|Continuous Drain Current, VGS@ 4.5V<br>~~a~~<br><br>~~ee~~|6.7<br>~~a~~<br><br>~~ee~~||
|IDM<br>~~—~~|Pulsed Drain Current<br>~~a~~<br>~~ee~~<br>~~—~~|64<br>~~a~~<br>~~ee~~||
|PD@TA= 25°C<br>~~—~~|Power Dissipation<br>~~a~~<br>~~ee~~<br>~~—~~|2.0<br>~~a~~<br>~~ee~~|W<br>~~a ee~~<br>~~ee~~<br>~~PO~~|
|PD@TA= 70°C<br>~~—~~|Power Dissipation<br>~~PO~~<br>~~—~~|1.3<br>~~PO~~||
|~~—~~|Linear Derating Factor<br>~~PO~~<br>~~—~~|0.02<br>~~PO~~|W/°C<br>~~PO~~|
|TJ<br>TSTG<br>~~—~~|Linear Derating Factor<br>Operating Junction and<br>Storage Temperature Range<br>~~—~~|-55  to + 150|°C|



> Notes ® through ® are on page 2 

www.irf.com 

1 

9/27/11 

**Static @ TJ = 25°C (unless otherwise specified)** 

|~~es~~|**Parameter**<br>~~es~~|**Min.**<br>~~es~~<br>~~GO~~|**Typ.**<br>~~es~~<br>~~GO~~<br>~~(RD~~|**Max.**<br>~~es~~<br>~~I~~<br>~~(RD~~|**Units**<br>~~es~~<br>~~GO~~<br>~~QO (~~|**Conditions**<br>~~es~~<br>~~(OO~~<br>~~(~~|
|---|---|---|---|---|---|---|
|BVDSS|Drain-to-Source Breakdown Voltage<br>~~DD~~<br>~~ee~~|30<br>~~GO~~<br>~~DD~~<br>~~ee~~|–––<br>~~GO~~<br>~~DD~~<br>~~(RD~~<br>~~OD~~<br>|–––<br>~~I ~~<br>~~DD~~<br>~~(RD~~<br>~~OO~~<br>|V<br> ~~GO ~~<br>~~DD~~<br>~~QO (~~<br>~~OO (O~~<br>|VGS= 0V,ID= 250μA<br> ~~(OO~~<br>~~DD~~<br>~~(~~<br>~~(O~~<br>|
|ΔΒVDSS/ΔTJ|Breakdown Voltage Temp.Coefficient<br>~~RD~~<br>~~ee~~|–––<br>~~RD~~<br>~~ee~~<br>~~es~~|23<br>~~(RD~~<br>~~RD~~<br>~~OD~~<br>~~EE~~<br>|–––<br>~~(RD~~<br>~~RD~~<br>~~OO~~<br>~~EE~~|mV/°C<br>~~QO (~~<br>~~RD~~<br>~~OO (O~~<br>~~EE~~|Reference to 25°C,ID= 1mA<br>~~(~~<br>~~RD~~<br>~~(O~~<br>~~EEE~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~ee~~<br>~~—+—_+—+—+—{,~~|–––<br>~~ee~~<br>~~es~~|14.0<br>~~OD~~<br>~~EE~~<br>~~ee~~|17.5<br>~~OO~~<br>~~EE~~<br>~~ee~~|mΩ<br>~~OO (O~~<br>~~EE~~<br>~~ee~~<br>~~—+—_+—+—+—{,~~|VGS= 4.5V,ID= 8.3A<br>~~(O~~<br>~~EEE~~<br>~~@~~|
|||–––<br>~~ee ~~<br>~~es~~<br>~~—+—_+—+—+—{,~~|17.5<br>~~OD~~<br> ~~EE~~<br>~~ee~~<br>~~—+—_+—+—+—{,~~|22.0<br>~~OO~~<br>~~EE~~<br>~~ee~~<br>~~—+—_+—+—+—{,~~||VGS= 2.5V,ID= 6.7A<br>~~(O~~<br>~~EEE~~<br>~~@~~<br>~~—+—_+—+—+—{,~~<br>~~ss~~|
|VGS(th)|Gate Threshold Voltage<br><br>~~—+—_+—+—+—{,~~|0.5<br> <br>~~es ~~<br>~~—+—_+—+—+—{,~~|–––<br> ~~EE~~<br> ~~ee~~<br>~~—+—_+—+—+—{,~~|1.1<br>~~EE~~<br>~~ee~~<br>~~—+—_+—+—+—{,~~|V<br>~~EE~~<br>~~ee~~<br>~~—+—_+—+—+—{,~~|VDS= VGS, ID= 10μA<br>~~EEE~~<br>~~@~~<br>~~—+—_+—+—+—{,~~<br>~~ss~~<br>~~ee~~|
|ΔVGS(th)|Gate Threshold Voltage Coefficient<br>~~—+—_+—+—+—{,~~<br>~~en~~|–––<br>~~—+—_+—+—+—{,~~<br>~~en~~<br>~~cen~~|-4.3<br>~~—+—_+—+—+—{,~~<br>~~en~~<br>~~ee~~|–––<br>~~—+—_+—+—+—{,~~<br>~~en~~<br>~~ee~~|mV/°C<br>~~—+—_+—+—+—{,~~<br>~~en~~<br>~~Oe ee~~||
|IDSS|Drain-to-Source Leakage Current<br>~~—+—_+—+—+—{,~~<br>~~en~~<br>~~a~~|–––<br>~~—+—_+—+—+—{,~~<br>~~en~~<br>~~a~~<br>~~cen~~<br>|–––<br>~~—+—_+—+—+—{,~~<br>~~en~~<br>~~a~~~~**e**~~<br>~~ee~~<br>~~eee~~|1.0<br>~~—+—_+—+—+—{,~~<br>~~en~~<br>~~**e**~~<br>~~ee~~<br>~~eee~~|μA<br>~~—+—_+—+—+—{,~~<br>~~en~~<br>~~**e**~~<br>~~Oe ee~~|VDS= 24V,VGS= 0V<br>~~—+—_+—+—+—{,~~<br>~~ss~~<br>~~**e**~~<br>~~ee~~|
|||–––<br>~~a~~<br>~~cen~~<br>~~e~~|–––<br>~~a~~~~**e**~~<br>~~ee~~<br>~~eeee~~|150<br>~~**e**~~<br>~~ee~~<br>~~eee~~||VDS= 24V,VGS= 0V,TJ= 125°C<br>~~**e**~~<br>~~ee~~|
|IGSS|Gate-to-Source Forward Leakage|–––<br>~~cen ~~<br>|–––<br> ~~ee ~~<br>~~eee ~~|100<br> ~~ee ~~<br> ~~eee~~|nA<br> ~~Oe ee~~<br>~~DDOO~~|VGS= 12V<br>~~ee~~|
||Gate-to-Source Reverse Leakage<br>~~es~~|–––<br>~~es~~<br>~~DDOO~~|–––<br>~~es~~<br>~~DDOO~~|-100<br>~~es~~<br>~~DDOO~~||VGS= -12V<br>~~(O~~|
|gfs|Forward Transconductance<br>~~Rs~~|25<br>~~Rs~~<br>~~DDOO~~|–––<br>~~Rs~~<br>~~DDOO~~|–––<br>~~Rs~~<br>~~DDOO~~|S<br>~~Rs~~<br>~~DDOO~~|VDS= 10V,ID= 6.4A<br>~~Rs~~<br>~~(O~~|
|Qg|TotalGateCharge|–––<br>~~DDOO~~|11<br>~~DDOO~~|–––<br>~~DDOO~~|nC<br>~~DDOO ~~<br>~~QO~~|VDS= 15V<br>VGS= 4.5V<br>ID= 6.4A<br> ~~(O~~<br>~~GO~~|
|Qgs|Gate-to-SourceCharge|–––|0.5|–––|||
|Qgd|Gate-to-DrainCharge<br>~~es~~|–––<br>~~es~~<br>~~GD~~|4.6<br>~~es~~<br>~~I~~|–––<br>~~es~~<br>~~(RD~~|||
|RG|Gate Resistance<br>~~RD~~|–––<br>~~RD~~<br>~~GD~~|2.2<br>~~RD~~<br>~~I~~|–––<br>~~RD~~<br>~~(RD~~|Ω<br>~~RD~~<br>~~QO~~|~~RD~~<br>~~GO~~|
|td(on)|Turn-On DelayTime|–––<br>~~GD ~~|5.4<br> ~~I ~~|–––<br> ~~(RD~~|ns<br>~~QO ~~|RG= 6.8Ω<br>VDD= 15V, VGS= 4.5V<br>ID= 6.4A<br>See Figs. 18<br> ~~GO~~<br>®|
|tr|Rise Time<br>~~es~~|–––<br>~~es~~|11<br>~~es~~|–––<br>~~es~~|||
|td(off)|Turn-Off DelayTime<br>~~es~~|–––<br>~~es~~|32<br>~~es~~|–––<br>~~es~~|||
|tf|Fall Time<br>~~es~~|–––<br>~~es~~|15<br>~~es~~|–––<br>~~es~~|||
|Ciss|Input Capacitance<br>~~es~~<br>~~Rs~~|–––<br>~~es~~<br>~~Rs~~|1010<br>~~es~~<br>~~Rs~~|–––<br>~~es~~<br>~~Rs~~|pF|ƒ= 1.0MHz<br>VGS= 0V<br>VDS= 25V|
|Coss|Output Capacitance<br>~~es~~|–––<br>~~es~~|96<br>~~es~~|–––<br>~~es~~|||
|Crss|Reverse Transfer Capacitance<br>~~es~~|–––<br>~~es~~|70<br>~~es~~|–––<br>~~es~~|||



Repetitive rating;  pulse width limited by max. junction temperature. 

Pulse width ≤ 400μs; duty cycle ≤ 2%. 

When mounted on 1 ich square copper board. 

R θ is measured at TJ of approximately 90°C. 

www.irf.com 

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100<br>VGS<br>TOP           10V<br>4.5V<br>2.5V<br>2.0V<br>1.7V<br>1.6V<br>10 1.5V<br>BOTTOM 1.4V<br>1 1.4V<br>FH ≤ 60μs PULSE WIDTH tt tt<br>Tj = 150°C<br>0.1<br>l ee<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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1000<br>VGS<br>TOP           10V<br>4.5V<br>100 2.5V<br>2.0V<br>1.7V<br>1.6V<br>1.5V<br>10 BOTTOM 1.4V<br>1<br>0.1<br>— 1.4V ≤ 60μs PULSE WIDTH<br>Tj = 25°C<br>0.01 HHH Fo ra<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 2.** Typical Output Characteristics 

**Fig 1.** Typical Output Characteristics 

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100 1.8<br>ID = 8.3AD = 8.3A= 8.3A<br>1.6 V GS  = 4.5V<br>T = 150°C<br>J<br>10 > = 1.4 Penna<br>4 HA<br>1.2<br>f ee<br>T = 25°C<br>J<br>1 1.0<br>A f | CHA<br>| | BERED CARRE CARRE<br>a VDS = 15V 0.8 EpEAnanAnan<br>≤ 60μs PULSE WIDTH<br>0.1 fh ft 0.6 TELL EE<br>1.0 1.5 2.0 2.5 3.0 3.5 -60 -40 -20 0 20 40 60 80 100 120 140<br>VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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1.8<br>ID = 8.3AD = 8.3A= 8.3A<br>1.6 V GS  = 4.5V<br>Penna<br>1.4<br>HA<br>1.2<br>1.0<br>CHA<br>BERED CARRE CARRE<br>0.8<br>EpEAnanAnan<br>TELL EE<br>0.6<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>Fig 4.   Normalized On-Resistance vs. Temperature<br>14<br>ID= 6.4A VDS= 24V<br>12 VDS= 15V<br>VDS= 6.0V<br>10<br>8<br>6 P| | A |<br>4 W<br>4<br>LF |<br>2<br>0<br>0 5 10 15 20 25 30<br> QG  Total Gate Charge (nC)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance vs. Temperature 

**Fig 3.** Typical Transfer Characteristics 

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10000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = C gs + Cgd,  C ds SHORTED<br>C  = C<br>rss   gd<br>Coss   = Cds + Cgd<br>1000 Ciss<br>HE H<br>C<br>oss<br>PN I | |<br>100 Crss<br>is s<br>|<br>10<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance vs.Drain-to-Source Voltage 

**Fig 6.** Typical Gate Charge vs.Gate-to-Source Voltage 

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100<br>T = 150°C<br>J<br>T = 25°C<br>J<br>10<br>pf fe<br>VGS = 0V<br>1.0 2<br>0.4 0.6 0.8 1.0 1.2 1.4<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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8.0 S ECT TLL<br>6.0 P LANE<br>S RNLa<br>pity}<br>4.0<br>INI<br>PETTING<br>PEPE<br>2.0<br>S EGeeeeen<br>0.0<br>PEP EET<br>25 50 75 100 125 150<br>TA , Ambient Temperature (°C)<br>ID  , Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 9.** Maximum Drain Current vs. Ambient Temperature 

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1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100<br>1msec<br>100μsec<br>10 10msec<br>DC<br>1<br>ee TA = 25°C<br>Tj = 150°C<br>Single Pulse<br>0.1 Sen Sati eta<br>0.1 1.0 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 8.   Maximum Safe Operating Area<br>1.4<br>F URR<br>1.2 T RS TT<br>1.00.8 T T Dm EX]<br>SSS<br>0.6 a ID = 10μA SKA<br>ID = 250μA<br>0.4 + ID = 1.0mA ASRN<br>0.2 Pt y tT TEN<br>0.0 PTT TET TET<br>-75 -50 -25 0 25 50 75 100 125 150<br>TJ , Temperature ( °C )<br>VGS(th), Gate threshold Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 10.** Threshold Voltage vs. Temperature 

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100<br>D = 0.50<br>10 g 0.20 E a<br>0.10<br>0.05<br>1 0.02<br>0.01<br>0.1<br>SINGLE PULSE<br>( THERMAL RESPONSE )<br>0.01 Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthja + TA<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJA ) °C/W<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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45<br>40 ID = 8.0A<br>ooh}<br>35<br>30<br>AREEEEEHE<br>25 PIN EET ET<br>20<br>TJ = 125°C<br>15<br>PAPE<br>10<br>T = 25°C<br>J<br>5<br>1 2 3 4 5 6 7 8 9 10 11 12<br>VGS, Gate -to -Source Voltage  (V)<br>Fig 12.  On-Resistance vs. Gate Voltage<br>100<br>Naa<br>90 I<br>D<br>TOP         0.9A<br>80<br>Naan 1.5A<br>P KL<br>70 BOTTOM 6.4A<br>60<br>50 AE<br>ERNE<br>40<br>NEKGSEEE<br>30<br>PNENEEEE<br>20<br>100 P PTSSSe<br>25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>Ω )<br>RDS(on),  Drain-to -Source On Resistance (m<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 14.** Maximum Avalanche Energy vs. Drain Current 

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70<br>60<br>50<br>Ce<br>40<br>30<br>Vgs = 2.5V<br>20<br>al<br>10 Vgs = 4.5V<br>0<br>0 10 20 30 40 50<br>ID, Drain Current (A)<br>) Ω<br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


**Fig 13.** Typical On-Resistance vs. Drain Current 

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16000<br>\<br>12000<br>:<br>O A<br>8000 \<br>\<br>\<br>4000<br>0 wt aUALi<br>1E-8 1E-7 1E-6 1E-5 1E-4 1E-3<br>Time (sec)<br>Power (W)<br>**----- End of picture text -----**<br>


**Fig 15.** Typical Power vs. Time 

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Driver Gate Drive<br>P.W.<br>Period D =<br>D.U.T + Oo P.W.  —= — — Period<br>VGS=10<br>(A @    •  Circuit ayoutConsiderations a jl<br> •<br>-  •   D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oR - [L] Current Transformer - ® + Current r Current di/dt NN<br>WW ® D.U.T. VDS Waveform Diode Recoverydv/dt \ +<br>VDD<br>•  Re-Applied<br>•   + Voltage Body Diode  Forward Drop<br>Re ( 4 •   vidt controlled by Rg Vop - Inductor Curent ee<br>•   Iso,.U.T. controled- Deviceby DutyUnder Factor "D"Tes ® es<br>Ripple  ≤ 5% ISD ee<br>Driver same type as D.U.T.<br>**----- End of picture text -----**<br>


or N-Channel 

> **Fig 16.** eak Diode HEXFET Recovery ower MOSFETs dv/dt Test Circuit 

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L<br>VCC<br>DUT<br>0<br>1K S<br>nel<br>**----- End of picture text -----**<br>


**Fig 17a.** Gate Charge Test Circuit 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>ve 20V<br>tp 0.01 Ω<br>**----- End of picture text -----**<br>


**Fig 18a.** Unclamped Inductive Test Circuit 

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 1<br> 0.1<br>**----- End of picture text -----**<br>


**Fig 19a.** Switching Time Test Circuit 

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Id<br>Vds<br>Vgs<br>Vgs(th)<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 17b.** Gate Charge Waveform 

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V(BR)DSS<br><e— tp —><br>/<br>/ |<br>/ |<br>IAS<br>Fig 18b.<br>V<br>DS<br>90% J<br>10%<br>V<br>GS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 18b.** Unclamped Inductive Waveforms 

**Fig 19b.** Switching Time Waveforms 

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6 

## **TSOP-6  Package Outline** 

## **TSOP-6 Part Marking Information** 

W =  (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR 

||||||||WORK|WORK|||
|---|---|---|---|---|---|---|---|---|---|---|
||||||YEAR|Y|WEEK||W||
|PART NUMBER|~~- FA~~<br>ta~~m~~ LC|||W =  WEEK<br>Y =  YEAR<br>LOT|2002<br>2001<br>2005<br>2003<br>2004<br>2006|2<br>1<br>5<br>3<br>4<br>6|02<br>01<br>04<br>03||B<br>A<br>C<br>D||
||TOP|||CODE|2008<br>2007|8<br>7|||||
|PART NUMBER CODE REFERENCE:|||||2009<br>2010|9<br>0|25<br>24||Y<br>X||
|A =  SI3443DV|O =  IRLTS6342TRPBF||||||26||Z||
|B =  IRF5800<br>C =  IRF5850|P =  IRFTS8342TRPBF<br>R =  IRFTS9342TRPBF||||W =  (27-52) IF PRECEDED BY A LETTER||||W =  (27-52) IF PRECEDED BY A LETTER||
|D =  IRF5851|S =  IRLTS2242TRPBF||||YEAR|Y|WEEK<br>WORK||W||
|E =  IRF5852|||||||||||
|F =  IRF5801|||||2001|A|27||A||
|G =  IRF5803<br>H =  IRF5804|||||2003<br>2002<br>2004|C<br>B<br>D|29<br>28<br>30||C<br>B<br>D||
|I =  IRF5805|||||2005|E|||||
|J =  IRF5806|||||2006|F|||||
|K =  IRF5810|||||2007|G|||||
|N =  IRF5802|||||2008|H|||||
||||||2009|J|||||
||||||2010|K|50||X||
|Note: A line above the work week|Note: A line above the work week||||||51||Y||



Note: A line above the work week (as shown here) indicates Lead-Free. 

**Note: For the most current drawing please refer to IR website at:** http://www.irf.com/package/ 

www.irf.com 

7 

## **Qualification information**[†] 

|**Qualification information**[†]|||
|---|---|---|
|Qualification level|Consumer<br>††<br>(per JEDEC JES D47F<br>†††guidelines)||
|Moisture Sensitivity Level|TSOP-6|MS L1<br>(per JEDEC J-S T D-020D<br>†††)|
|RoHS compliant|Yes||



- Qualification standards can be found at International Rectifier’s web site 

http://www.irf.com/product-info/reliability 

- †† Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ 

- ††† Applicable version of JEDEC standard at the time of product release. 

Data and specifications subject to change without notice. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 09/2011 

www.irf.com 

8 



## Links

- [View this product on Novapart](https://novapart.co/products/IRLTS6342TRPBF/power-mosfet-n-channel-30-v-83-a-00175-ohm-tsop)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irlts6342trpbf/mosfet-n-ch-30v-tsop-6/dp/3155165)
---

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