# Power MOSFET, N Channel, 30 V, 160 A, 0.0016 ohm, TO-263AB, Surface Mount

![Product image](https://novapart.co/image/farnell:2781156/)

**URL**: https://novapart.co/products/IRLS3813TRLPBF/power-mosfet-n-channel-30-v-160-a-00016-ohm-to
**SKU**: IRLS3813TRLPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.9480
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Power Dissipation | 195W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 195W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.0016ohm |
| Transistor Case Style | TO-263AB |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 160A |
| Drain Source On State Resistance | 0.0016ohm |
| Gate Source Threshold Voltage Max | 2.35V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2781156/)

~~T&R Rectifier~~ 

## IRLS3813PbF 

HEXFET[® ] Power MOSFET 

## **Application** 

 Brushed motor drive applications D **VDSS 30V**  BLDC motor drive applications **RDS(on) typ. 1.60m**   Battery powered circuits G **max 1.95m**   Half-bridge and full-bridge topologies **ID (Silicon Limited) 247A**   Synchronous rectifier applications S  Resonant mode power supplies ~~==~~ **ID (Package Limited) 160A**  OR-ing and redundant power switches  DC/DC and AC/DC converters D  DC/AC inverters S G **Benefits**  Fully Characterized Capacitance and Avalanche SOA D2Pak  Enhanced body diode dV/dt and dI/dt Capability IRLS3813PbF  Lead-Free, RoHS Compliant **G D S** Gate Drain Source ~~[>~~ 

|**Base part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Orderable Part Number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|IRLS3813PbF|D2-Pak|Tube|50|IRLS3813PbF|
|||Tape and Reel Left|800|IRLS3813TRLPbF|



## **Absolute Maximum Rating** 

|**Symbol**|**Symbol**|**Parameter**||**Max.**|**Max.**|**Units**|
|---|---|---|---|---|---|---|
|VDS||Drain-to-Source Voltage||30|30|V|
|ID @TC= 25°C||Continuous Drain Current,VGS @10V(Silicon Limited)||247|||
|ID @TC= 100°C<br>ID @TC= 25°C||Continuous Drain Current,VGS @10V(Silicon Limited)<br>Continuous Drain Current,VGS @10V(Package Limited)||156<br>160||A|
|IDM||Pulsed Drain Current||850|||
|PD @TC= 25°C||Maximum Power Dissipation||195||W|
|||Linear DeratingFactor||1.6||W/°C|
|VGS||Gate-to-Source Voltage||± 20||V|
|TJ||Operating Junction and|||||
|TSTG||Storage Temperature Range|-55  to + 150|-55  to + 150||°C|
|||SolderingTemperature,for 10 seconds (1.6mm fromcase)||300|||
|**Avalanche Characteristics**|||||||
|**Symbol**<br>**Parameter**<br>**Max.**<br>**Units**<br>EAS (Thermallylimited)<br>SinglePulseAvalancheEnergy <br>177<br>mJ<br>IAR<br>Avalanche Current<br>A<br>148<br>~~—————~~|||||||
|**Thermal Resistance**|||||||
|**Symbol**<br>**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>RJC<br>Junction-to-Case<br>–––<br>0.64<br>°C/W<br>RJA<br>Junction-to-Ambient(PCB Mount) <br>–––<br>40<br>~~ee~~<br>~~ee ee~~|||||||
|1<br>www.irf.com © 2014 International Rectifier <br>Submit Datasheet FeedbackJanuary 23, 2014<br>~~ee~~|||||||



~~16é4R~~ 

IRLS3813PbF ~~rT~~ 

**Static @ TJ = 25°C (unless otherwise specified)** 

|**Static @ TJ = 25°C (unless otherwise specified)J = 25°C (unless otherwise specified) = 25°C (unless otherwise specified)**||
|---|---|
|**Parameter**<br>**Min.**<br>**Typ. Max. Units**<br>**Conditions**<br>V(BR)DSS<br>Drain-to-Source Breakdown Voltage<br>30<br>–––<br>–––<br>V<br>VGS= 0V, ID= 250µA<br>V(BR)DSS/TJBreakdown Voltage Temp. Coefficient<br>–––<br>23<br>––– mV/°C Reference to 25°C,ID= 1mA<br>~~ee~~<br>~~tts tr ts~~<br>~~nn~~<br>~~a~~||
|RDS(on) <br>Static Drain-to-Source On-Resistance<br>–––<br>1.60<br>1.95<br>m<br>VGS= 10V,ID= 148A<br>VGS(th)<br>Gate Threshold Voltage<br>1.35<br>–––<br>2.35<br>V<br>VDS= VGS,ID= 150µA<br>IDSS<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>1<br>µA<br>VDS=30V, VGS= 0V<br>–––<br>–––<br>100<br>VDS=30V,VGS= 0V,TJ=125°C<br>IGSS<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>nA<br>VGS= 20V<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-100<br>VGS= -20V<br>RG<br>Gate Resistance<br>–––<br>0.9<br>–––<br><br>~~a~~<br>~~fe~~<br>~~OE~~<br>~~lS~~||
|**Dynamic  Electrical Characteristics @ TJ = 25°C (unless otherwise specified)**||
|gfs<br>Forward Transconductance<br>428<br>–––<br>–––<br>S<br>VDS= 10V,ID=148A||
|Qg<br>Total Gate Charge<br>–––<br>55<br>83<br>nC<br>ID= 148A<br>Qgs<br>Gate-to-Source Charge<br>–––<br>28<br>–––<br>VDS= 15V<br>Qgd<br>Gate-to-Drain Charge<br>–––<br>11<br>–––<br>VGS= 4.5V<br>td(on)<br>Turn-On DelayTime<br>–––<br>32<br>–––<br>ns<br>VDD= 20V<br>tr<br>Rise Time<br>–––<br>202<br>–––<br>ID= 148A<br>td(off)<br>Turn-Off DelayTime<br>–––<br>33<br>–––<br>RG= 4.5<br>tf<br>Fall Time<br>–––<br>102<br>–––<br>VGS= 4.5V<br>~~=e~~||
|Ciss<br>Input Capacitance<br>–––<br>8020<br>–––<br>pF<br>VGS= 0V<br>Coss<br>Output Capacitance<br>–––<br>1250<br>–––<br>VDS= 25V<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>570<br>–––<br>ƒ= 1.0MHz<br>Coss eff.(ER)<br>Effective Output Capacitance(EnergyRelated)<br>–––<br>1560<br>–––<br>VGS= 0V, VDS = 0V to 24V<br>Coss eff.(TR)<br>Output Capacitance (Time Related)<br>–––<br>1750<br>–––<br>VGS= 0V, VDS = 0V to 24V<br>~~Se~~<br>~~ee~~<br>~~GO~~<br>~~Po~~<br>~~eers~~<br>~~ts ts~~<br>~~es~~||
|**Diode Characteristics**||
|**Parameter**<br>**Min.**<br>**Typ. Max. Units**<br>**Conditions**<br>IS<br>Continuous Source Current<br>–––<br>–––<br>247<br>A<br>MOSFET symbol<br>(BodyDiode)<br>showing  the<br>ISM<br>Pulsed Source Current<br>–––<br>–––<br>850<br>integral reverse<br>(BodyDiode)<br>p-njunction diode.<br>~~IE~~<br>~~(I (OU UO~~<br>~~ee~~<br>~~a~~||
|VSD<br>Diode Forward Voltage<br>–––<br>–––<br>1.3<br>V<br>TJ= 25°C,IS= 148A,VGS= 0V<br>dv/dt<br>Peak Diode Recoverydv/dt<br>–––<br>2.2<br>–––<br>V/ns TJ= 150°C,IS=148A,VDS= 30V<br>trr<br>Reverse Recovery Time<br>–––<br>32<br>–––<br>nsTJ =25°CVDD= 26V<br>–––<br>33<br>–––<br>TJ =125°CIF= 148A,<br>Qrr<br>Reverse Recovery Charge<br>–––<br>24<br>–––<br>nCTJ =25°Cdi/dt = 100A/µs<br>–––<br>26<br>–––<br>TJ =125°C <br>IRRM<br>Reverse Recovery Current<br>–––<br>1.2<br>–––<br>A<br>TJ= 25°C<br>~~Se~~<br>~~**e**e~~<br>~~ee~~<br>~~ees~~||
|**Notes:**||
|Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 160A by source||
|bonding technology. Note that current limitations arising from heating of the device leads may occur with some lead mounting||
|arrangements. (Refer to AN-1140)||



- Repetitive rating; pulse width limited by max. junction temperature. 

-     Limited by TJmax, starting TJ = 25°C, L = 16µH, RG = 50, IAS = 148A, VGS =10V. 

- ISD  148A, di/dt  865A/µs, VDD  V(BR)DSS, TJ 150°C. 

- Pulse width  400µs; duty cycle  2%. 

-    Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

-    Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. 

-    R is measured at TJ approximately 90°C. 

- When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994:  http://www.irf.com/technical-info/appnotes/an-994.pdf 

-      Pulse drain current is limited at 640A by source bonding technology. 

2 www.irf.com © 2014 International Rectifier ~~———EEEE——~~ 

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## ~~I6aR~~ 

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1000<br>VGS<br>TOP           15V<br>10V<br>8.0V<br>4.5V<br>3.5V<br>3.0V<br>100 2.7V<br>BOTTOM 2.5V<br>10<br>2.5V<br>60µs PULSE WIDTH<br>Tj = 25°C<br>1 f=<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>|<br>Fig 1.   Typical Output Characteristics<br>1000<br>TJ = 150°C<br>100<br>TJ = 25°C<br>10<br>ste<br>V DS  = 15V<br>60µs PULSE WIDTH<br>1.0<br>File<br>1 2 3 4 5 6<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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100000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = Cgs + Cgd,  Cds SHORTED<br>C rss    = C gd<br>Coss  = Cds + Cgd<br>10000 Ciss<br>C oss<br>i<br>1000<br>Crss<br>Hl<br>UI<br>100<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


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1000<br>VGS<br>TOP           15V<br>10V<br>8.0V<br>4.5V<br>3.5V<br>3.0V<br>2.7V<br>BOTTOM 2.5V<br>100<br>2.5V<br>60µs PULSE WIDTH<br>Tj = 150°C<br>10<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>1.8<br>ID = 148A<br>1.6 V GS  = 10V<br>1.4<br>1.2<br>1.0<br>0.8 Bet<br>0.6<br>ALLELE<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>Fig 4.   Normalized On-Resistance vs. Temperature<br>14<br>ID= 148A<br>12<br>VDS= 24V<br>10 V DS = 15V<br>8<br>6<br>f<br>4<br>|<br>2<br>FAR<br>0<br>0 40 80 120 160<br> QG,  Total Gate Charge (nC)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance vs. Temperature 

**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage 3 www.irf.com © 2014 International Rectifier ~~———EEEE——~~ 

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## ~~ItaR~~ 

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1000<br>TJ = 150 ° C<br>100<br>Se7ae<br>T J  = 25°C<br>10<br>1<br>V GS  = 0V<br>0.1 ie |<br>0.0 0.4 0.8 1.2 1.6 2.0<br>VSD, Source-to-Drain Voltage (V)<br>Fig 7.<br>280<br>Limited by  Package<br>240<br>oo<br>200<br>Aa<br>160<br>vasa<br>120<br>aww<br>80<br>| :<br>40<br>| | |<br>0<br>pi | tN<br>25 50 75 100 125 150<br> TC , Case Temperature (°C)<br>ISD, Reverse Drain Current (A)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 9.** Maximum Drain Current vs. Case Temperature 

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0.6<br>0.5<br>0.4<br>0.3<br>0.2<br>0.1<br>0.0<br>0 5 10 15 20 25 30<br>VDS, Drain-to-Source Voltage (V)<br>Energy (µJ)<br>**----- End of picture text -----**<br>


**Fig 11.** Typical Coss Stored Energy 

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OPERATION IN THIS AREA<br>1000 LIMITED BY RDS(on)<br>100µsec<br>100<br>1msec<br>10 Limited by Package<br>1 Tc = 25°C DC<br>10msec<br>Tj = 150°C<br>Single Pulse<br>0.1 ,<br>0.1 1 10<br>VDS, Drain-to-Source Voltage (V)<br>Fig 8.   Maximum Safe Operating Area<br>36<br>Id = 1.0mA<br>35<br>POUERRENED2<br>34<br>oo eT<br>33<br>CeCe<br>32<br>EET<br>31<br>Dyanna<br>30 ALTE<br>ETT TTY<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Temperature ( °C )<br>Fig 10.   Drain-to–Source Breakdown Voltage<br>800<br>ID<br>TOP           17A<br>                  38A<br>600 NUIT BOTTOM    148A<br>NUL<br>400<br>NOLL<br>200<br>RSS<br>0<br>25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>ID,  Drain-to-Source Current (A)<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 10.** Drain-to–Source Breakdown Voltage 

**Fig 12.** Maximum Avalanche Energy Vs. Drain Current 

4 

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~~1I6aR~~ 

IRLS3813PbF ~~rT~~ 

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1<br>Tl OLLaem<br>D = 0.50<br>0.20<br>0.1<br>ae 0.10 eneee =aaea<br>Co 0.05<br>0.02<br>0.01 0.01<br>al<br>Sa CTT MLEAU<br>0.001<br>SINGLE PULSE<br>Notes:<br>( THERMAL RESPONSE )<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>ae<br>0.0001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC ) °C/W<br>**----- End of picture text -----**<br>


**Fig 13.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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1000<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  Tj = 125 ° C and<br>Tstart =25°C (Single Pulse)<br>100<br>TT<br>10<br>Allowed avalanche Current vs avalanche<br>| pulsewidth, tav, assuming  j = 25°C and<br>Tstart = 125°C.<br>eeeFa<br>1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 14.** Single Avalanche Current vs. pulse Width 

5 

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~~LtaR~~ 

IRLS3813PbF ~~a~~ 

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6 3.0<br>ID = 148A<br>5 Hetty<br>2.5<br>4<br>AEE 2.0 Fete<br>3<br>NEEL TJ = 125°C 1.5 I D  = 150 SSS µA AR<br>2 ID = 250µA<br>ID = 1.0mA<br>1.0 ID = 1A<br>1 SHEE ALIS<br>TJ = 25°C<br>0 teeta tt 0.5 TELLS<br>2 4 6 8 10 12 14 16 18 20 -75 -50 -25 0 25 50 75 100 125 150<br>TJ , Temperature ( °C )<br>VGS, Gate -to -Source Voltage  (V)<br>Fig 15.   Typical On-Resistance vs. Gate Voltage<br>Fig 16.   Threshold Voltage vs. Temperature<br>6 5<br>IF = 99A IF = 148A<br>VR = 26V VR = 26V<br>5 TJ = 25°C 4 T J = 25°C<br>TJ = 125°C TJ = 125°C<br>4 pane? LE<br>van AL<br>3<br>3<br>ye ELE<br>2<br>2<br>ap 4énen 5<br>E4nnnn Viti<br>1 1<br>0 100 200 300 400 500 600 0 100 200 300 400 500 600<br>diF /dt (A/µs) diF /dt (A/µs)<br>Fig 18.   Typical Recovery Current vs. dif/dt<br>Fig 17.   Typical Recovery Current vs. dif/dt<br>90<br>140<br>IF = 148A<br>IF = 99A<br>120 VR = 26V Pp 80 V R  = 26V nn<br>TJ = 25°C<br>TJ = 25°C<br>100 T J  = 125°C 70 T J  = 125°C<br>60<br>80 tAaa |Se<br>50<br>| CHAyE<br>6040 lL| er| || 4030 ATtA]<br>20 4a<br>20 rit [tf] |<br>0 100 200 300 400 500 600<br>0 100 200 300 400 500 600<br>diF /dt (A/µs)<br>diF /dt (A/µs)<br>VGS(th), Gate threshold Voltage (V)<br>)<br>RDS(on),  Drain-to -Source On Resistance (m<br>IRRM (A) IRRM (A)<br>QRR (nC)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 15.** Typical On-Resistance vs. Gate Voltage 

**Fig 20.** Typical Stored Charge vs. dif/dt 

**Fig 19.** Typical Stored Charge vs. dif/dt 6 www.irf.com © 2014 International Rectifier ~~———EEEE——~~ 

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**Fig 21.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

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15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>20V<br>tp 0.01<br>**----- End of picture text -----**<br>


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IAS<br>**----- End of picture text -----**<br>


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V(BR)DSS<br>tp ><br>**----- End of picture text -----**<br>


**Fig 22a.** Unclamped Inductive Test Circuit 

**Fig 22b.** Unclamped Inductive Waveforms 

**Fig 23a.** Switching Time Test Circuit 

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VD<br>**----- End of picture text -----**<br>


**Fig 23b.** Switching Time Waveforms 

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Id<br>Vds<br>Vgs<br>Vgs(th)<br>! !<br>l a p li e p i g pg<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 24a.** Gate Charge Test Circuit 

**Fig 24b.** Gate Charge Waveform 

7 

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**D[2] Pak (TO-263AB) Package Outline** (Dimensions are shown in millimeters (inches)) 

## **D[2] Pak (TO-263AB) Part Marking Information** 

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THIS IS AN IRF530S WITH<br>PART NUMBER<br>LOT CODE 8024 INTERNATIONAL<br>ASSEMBLED ON WW 02, 2000 RECTIFIER F530S<br>IN THE ASSEMBLY LINE "L" LOGO<br>DATE CODE<br>YEAR 0 =  2000<br>ASSEMBLY<br>LOT CODE 7 WEEK 02<br>LINE L<br>OR<br>PART NUMBER<br>INTERNATIONAL<br>RECTIFIER F530S<br>LOGO DATE CODE<br>P =  DESIGNATES LEAD - FREE<br>PRODUCT (OPTIONAL)<br>ASSEMBLY i<br>LOT CODE amsT U a eU YEAR 0 =  2000WEEK 02<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

8 

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IRLS3813PbF 

**D[2] Pak (TO-263AB) Tape & Reel Information** (Dimensions are shown in millimeters (inches)) 

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TRR<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)3.90 (.153) 1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 15.42 (.609) 24.30 (.957)<br>15.22 (.601) 23.90 (.941)<br>TRL<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>FEED DIRECTION<br>13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941)<br>4<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>30.40 (1.197)<br>NOTES :       MAX.<br>1.   COMFORMS TO EIA-418. 26.40 (1.039) 4<br>2.   CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)<br>3.   DIMENSION MEASURED @ HUB.4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 3<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

## **Qualification Information[† ]** 

|**Qualification Information[† ]**|||
|---|---|---|
|**Qualification Level**|Industrial||
|**RoHS Compliant**|D2Pak|MSL1|
||Yes||



- Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ 

- ††  Applicable version of JEDEC standard at the time of product release. 

**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 

9 

Submit Datasheet Feedback                        January 23, 2014 

www.irf.com © 2014 International Rectifier 



## Links

- [View this product on Novapart](https://novapart.co/products/IRLS3813TRLPBF/power-mosfet-n-channel-30-v-160-a-00016-ohm-to)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/infineon/irls3813trlpbf/mosfet-n-ch-30v-160a-to-263ab/dp/2781156)
---

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