# Power MOSFET, N Channel, 40 V, 195 A, 1700 µohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2803430/)

**URL**: https://novapart.co/products/IRLS3034TRLPBF/power-mosfet-n-channel-40-v-195-a-1700-ohm-to-263
**SKU**: IRLS3034TRLPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.1100
**Stock**: 500+
**Lead Time**: 134 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 375W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 195A |
| Drain Source On State Resistance | 1700µohm |
| Gate Source Threshold Voltage Max | 2.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2803430/)

97364A 

## po 97364A IRLS3034PbF IRLSL3034PbF 

HEXFET ® Power MOSFET 

## **Applications** 

DC Motor Drive 

High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits 

> D **VDSS 40V RDS(on)   typ. 1.4m max. 1.7m** Q 

> G **ID (Silicon Limited)** ~~on~~ **343A** S **ID (Package Limited) 195A** 

## **Benefits** 

Optimized for Logic Level Drive Very Low RDS(ON) at 4.5V VGS Superior R*Q at 4.5V VGS 

Improved  Gate, Avalanche and Dynamic  dV/dt Ruggedness 

Fully Characterized Capacitance and Avalanche SOA 

Enhanced body diode dV/dt and dI/dt Capability Lead-Free 

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D D<br>S S<br>D<br>G G<br>D [2] Pak TO-262<br>IRLS3034PbF IRLSL3034PbF<br>**----- End of picture text -----**<br>


|**G**|**D**|**S**|
|---|---|---|
|Gate|Drain|Source|



## **Absolute Maximum Ratings** 

|**Symbol**<br>**Parameter**<br>**Units**<br>**Max.**|
|---|
|ID@ TC= 25°C<br>Continuous Drain Current, VGS@ 10V(Silicon Limited)<br>ID@ TC= 100°C<br>Continuous Drain Current, VGS@ 10V(Silicon Limited)<br>ID@ TC= 25°C<br>Continuous Drain Current, VGS@ 10V(Package Limited)<br>IDM<br>Pulsed Drain Current<br>PD@TC= 25°C<br>Maximum Power Dissipation<br>W<br>343<br>243<br>1372<br>195<br>A<br>375<br>~~©~~<br>~~©~~<br>~~pT~~<br>~~————=_—————— ae~~<br>~~a~~|
|Linear DeratingFactor<br>W/°C<br>2.5<br>~~a~~|
|VGS<br>Gate-to-Source Voltage<br>V<br>±20<br>~~a~~|
|dv/dt<br>Peak Diode Recovery<br>V/ns<br>4.6<br>~~©~~|
|TJ<br>Operating Junction and<br>TSTG<br>Storage Temperature Range<br>-55  to + 175<br>°C|
|Soldering Temperature, for 10 seconds<br>300|
|(1.6mm from case)|
|Mountingtorque,6-32 or M3 screw<br>**Avalanche Characteristics**<br>10lbf in(1.1N m)<br>~~a~~|
|EAS(Thermallylimited)<br>Single Pulse Avalanche Energy<br>mJ<br>IAR<br>Avalanche Current<br>A<br>EAR<br>Repetitive Avalanche Energy<br>mJ<br>**Thermal Resistance**<br>See Fig. 14, 15, 22a, 22b,<br>255<br>~~ee~~<br>~~—————————— ee~~|
|www.irf.com<br>1<br>**Symbol**<br>**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>RθJC<br>Junction-to-Case<br>–––<br>0.4<br>RθJA<br>Junction-to-Ambient(PCB Mount)<br>–––<br>40<br>°C/W<br>~~——_—————~~<br>~~ae~~<br>~~os~~|



07/02/09 

**Static @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**|**Parameter**<br>**Min. Typ. Max. Units**<br>**Conditions**|
|---|---|
|V(BR)DSS<br>∆V(BR)DSS/∆TJ<br>VGS(th)<br>IDSS<br>IGSS<br>RG(int)<br>RDS(on)|Drain-to-Source Breakdown Voltage<br>40<br>–––<br>–––<br>V<br>Breakdown Voltage Temp. Coefficient<br>–––<br>0.04<br>–––<br>V/°C<br>–––<br>1.4<br>1.7<br>–––<br>1.6<br>2.0<br>Gate Threshold Voltage<br>1.0<br>–––<br>2.5<br>V<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>20<br>–––<br>–––<br>250<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-100<br>Internal Gate Resistance<br>–––<br>2.1<br>–––<br>Ω<br>VGS= -20V<br>VGS= 0V, ID= 250µA<br>Reference to 25°C, ID= 5mA<br>VGS= 10V, ID= 195A<br>VDS= VGS, ID= 250µA<br>VDS= 40V, VGS= 0V<br>VDS= 40V, VGS= 0V, TJ= 125°C<br>VGS= 20V<br>µA<br>nA<br>Static Drain-to-Source On-Resistance<br>VGS= 4.5V, ID= 172A<br>mΩ<br>~~GG~~<br>~~GC~~<br>~~GQ GO~~<br>~~ee~~<br>~~| |~~<br>~~®~~<br>~~GG~~<br>~~Ne~~<br>~~ee ee Ol eee~~<br>~~||~~<br>~~ee~~<br>~~oea~~<br>~~GQ GCF~~|
|**Dynamic @ TJ = 25°C (unless otherwise specified)**||
|**Symbol**|**Parameter**<br>**Min. Typ. Max. Units**<br>**Conditions**|
|gfs<br>Qg<br>Qgs<br>Qgd<br>Qsync|Forward Transconductance<br>286<br>–––<br>–––<br>S<br>Total Gate Charge<br>–––<br>108<br>162<br>Gate-to-Source Charge<br>–––<br>29<br>–––<br>Gate-to-Drain("Miller")Charge<br>–––<br>54<br>–––<br>Total Gate Charge Sync. (Qg- Qgd)<br>–––<br>54<br>–––<br>VDS= 20V<br>nC<br>VGS= 4.5V<br>ID= 185A, VDS=0V, VGS= 4.5V<br>VDS= 10V, ID= 195A<br>ID= 185A<br>~~GQ~~<br>~~aee~~<br>~~ee~~<br>~~®~~<br>~~ee~~|
|td(on)|Turn-On DelayTime<br>–––<br>65<br>–––<br>VDD= 26V<br>~~RG~~|
|tr<br>td(off)<br>tf<br>Ciss|Rise Time<br>–––<br>827<br>–––<br>Turn-Off DelayTime<br>–––<br>97<br>–––<br>Fall Time<br>–––<br>355<br>–––<br>Input Capacitance<br>–––<br>10315<br>–––<br>VGS= 4.5V<br>VGS= 0V<br>ns<br>ID= 195A<br>RG= 2.1Ω<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~®~~<br>~~RG~~|
|Coss<br>Output Capacitance<br>–––<br>1980<br>–––<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>935<br>–––<br>Cosseff. (ER)<br>Effective Output Capacitance(EnergyRelated)<br>–––<br>2378<br>–––<br>Cosseff. (TR)<br>Effective Output Capacitance(Time Related)<br>–––<br>2986<br>–––<br>**Diode Characteristics**<br>VDS= 25V<br>ƒ= 1.0MHz<br>VGS= 0V, VDS= 0V to 32V<br>VGS= 0V, VDS= 0V to 32V<br>pF<br>~~ee~~<br>~~aa) se~~<br>~~@~~<br>~~es~~<br>~~®~~||
|**Symbol**|**Parameter**<br>**Min. Typ. Max. Units**<br>**Conditions**|
|IS<br>ISM<br>VSD<br>trr<br>Qrr<br>IRRM|S<br>D<br>G<br>Continuous Source Current<br>–––<br>–––<br>(BodyDiode)<br>Pulsed Source Current<br>–––<br>–––<br>(BodyDiode)<br>Diode Forward Voltage<br>–––<br>–––<br>1.3<br>V<br>Reverse Recovery Time<br>–––<br>39<br>–––<br>TJ= 25°C<br>VR= 34V,<br>–––<br>41<br>–––<br>TJ= 125°C<br>IF= 195A<br>Reverse Recovery Charge<br>–––<br>39<br>–––<br>TJ= 25°C<br>di/dt = 100A/µs<br>–––<br>46<br>–––<br>TJ= 125°C<br>Reverse RecoveryCurrent<br>–––<br>1.7<br>–––<br>A<br>TJ= 25°C<br>showing  the<br>ns<br>MOSFET symbol<br>TJ= 25°C, IS= 195A, VGS= 0V<br>integral reverse<br>p-njunction diode.<br>nC<br>A<br>343<br>1372<br>~~ee ee~~<br>~~ee ee~~<br>~~GGG~~<br>~~CO~~<br>~~RE~~<br>~~||~~<br>~~**e**eeeee~~<br>;<br>~~||~~<br>~~G~~|
|ton|Forward Turn-On Time<br>Intrinsic turn-on time is negligible(turn-on is dominated byLS+LD)<br>~~a~~|



Calcuted continuous current based on maximum allowable junction temperature Bond wire current limit is 195A. Note that current limitation arising from heating of the device leds may occur with some lead mounting arrangements. 

Repetitive rating;  pulse width limited by max. junction temperature. 

Limited by TJmax, starting TJ = 25°C, L = 0.013mH 

- RG = 25Ω, IAS = 195A, VGS =10V. Part not recommended for use above this value . 

## Pulse width ≤ 400µs; duty cycle ≤ 2%. 

© Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

Coss eff. (ER) is a fixed capacitance that gives the same energy as 

Coss while VDS is rising from 0 to 80% VDSS. 

When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to applocation note # AN-994. 

θ 

ISD ≤ 195A, di/dt ≤ 841A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. 

θJC 

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100000<br>VGS<br>TOP           15V ≤60µs PULSE WIDTH<br>10V<br>8.0V Tj = 25°C<br>10000 4.5V<br>3.5V<br>3.0V<br>2.7V<br>1000 BOTTOM 2.5V<br>e ae<br>100 P an el<br>ert<br>10<br>2.5V<br>1 roto<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br>10000<br>1000<br>T = 175°C<br>100 S47, S J  ————— TJ = 25°C |<br>10<br>= ==<br>1 Ap f ff | Tid<br>VDS = 25V<br>≤60µs PULSE WIDTH<br>0.1 7arf —_4 ae<br>1 2 3 4 5<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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100000<br>VGS   = 0V,       f = 1 MHZ<br>— Ciss    = C gs + Cgd,  C ds SHORTED<br>C  = C<br>rss   gd<br>C = C + C<br>oss   ds  gd<br>C<br>iss<br>10000 py<br>C<br>oss<br>Paa ee<br>Crss<br>1000 — |<br>e e<br>|<br>100 ee |<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage 

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100000<br>VGS<br>TOP           15V ≤60µs PULSE WIDTH<br>10V Tj = 175°C<br>8.0V<br>4.5V<br>10000 3.5V<br>3.0V<br>2.7V<br>1000 BOTTOM 2.5V HH<br>P E ae<br>100 | |feo<br>2.5V<br>10 FT aETT<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>2.0<br>ID = 195A<br>VGS = 10V<br>1.5<br>T HT vaATT<br>PELLET<br>1.0<br>peap24 <<br>PEELE LEELA<br>0.5<br>-60 -40 -20 0 20 40 60 80 100120140160180<br>TJ , Junction Temperature (°C)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance vs. Temperature 

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5.0<br>4.5 ID= 185A VDS= 32V | |<br>VDS= 20V<br>4.0<br>3.5 ee<br>3.02.5 T AT FT<br>2.0<br>o i<br>T EE LLL<br>1.5<br>1.00.50.0 YPP | i | | ft | ft | ff<br>0 20 40 60 80 100 120 140<br> QG,  Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

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10000<br>1000<br>TJ = 175°C<br>100<br>ee Ly TJ = 25°C es<br>10<br>P pp<br>VGS = 0V<br>1.0<br>0.0 0.5 1.0 1.5 2.0 2.5<br>VSD, Source-to-Drain Voltage (V)<br>Fig 7.   Typical Source-Drain Diode<br>Forward Voltage<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


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350<br>Limited By Package<br>300<br>p n |<br>250<br>po<br>200 Dan n<br>150 TTT KAI<br>100<br>+ } 41\—<br>S mee<br>50<br>T EEN<br>0<br>25 50 75 100 125 150 175<br> TC , Case Temperature (°C)<br>Fig 9.   Maximum Drain Current vs.<br>Case Temperature<br>2.5<br>2.01.5 TT ILLLE<br>1.0 SRERED Al<br>0.5<br>0.0 PLEa<br>0 5 10 15 20 25 30 35 40 45<br>VDS, Drain-to-Source Voltage (V)<br>Energy (µJ)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 11.** Typical COSS Stored Energy 

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10000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>1000<br>10 0µsec<br>100 1 m sec<br>LIMITED BY PACKAGE<br>1 0mse c<br>10<br>ee<br>D C<br>1 T c = 25°C<br>ST Tj = 175°C Sc t<br>Single Pulse<br>0.1<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 8.   Maximum Safe Operating Area<br>50<br>Id = 5mA<br>48 E e<br>A TL<br>46<br>Bz<br>W ALLA<br>44<br>42 L ALLA<br>Y<br>A LLEL<br>40 ELELE<br>-60 -40 -20 0 20 40 60 80 100120140160180<br>TJ , Temperature ( °C )<br>Fig 10.   Drain-to-Source Breakdown Voltage<br>1200<br>ID<br>TOP         38.9A<br>1000 T TT<br>65.3A<br>BOTTOM 195A<br>800<br>A L fT<br>600<br>A ti<br>400<br>200<br>0 TS TTSS<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>ID,  Drain-to-Source Current (A)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 10.** Drain-to-Source Breakdown Voltage 

**Fig 12.** Maximum Avalanche Energy vs. DrainCurrent 

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1<br>PP TRE FA EEEett<br>D = 0.50<br>ee eee SSS tl |<br>0.1 0.20<br>0.10<br>A 0.020.05 | τJ τJ S ana R1 R1 R2 R2 R3 R3 R4R4 τCτ Ri (°C/W)   0.02477      0.000025 τi (sec)<br>0.01 e e 0.01 ell τ1τ1 τ a 2 τ2 a a τ3τ3 τ4τ4 |]fT 0.08004      0.0000770.19057     0.001656<br>ee a ee Ci= Ciτi/Rii/Ri es 0.10481     0.008408<br>| CO SINGLE PULSE tt Era Notes: ot rs<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001 AV| iy i HE |LPLEE CHTll<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 13.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>1000<br>Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming ∆Tj = 150°C and<br>Tstart =25°C (Single Pulse)<br>aS<br>ee 40 ee il<br>100 0.01<br>P EERS EHS EH<br>ESSE 0.05 HTT<br>0.10<br>n t ee<br>10<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming ∆Τ j = 25°C and<br>Tstart = 150°C.<br>1 PeSs TESaeETE LTT<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Thermal Response ( Z thJC ) °C/W<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 14.** Typical Avalanche Current vs.Pulsewidth 

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300<br>Notes on Repetitive Avalanche Curves , Figures 14, 15:<br>TOP          Single Pulse<br>(For further info, see AN-1005 at www.irf.com)<br>BOTTOM   1.0% Duty Cycle<br>1. Avalanche failures assumption:<br>250 ID = 195A<br>excess of Tjmax. This is validated for every part type.jmax. This is validated for every part type.. This is validated for every part type.<br>200 R ee 2. Safe operation in Avalanche is allowed as long asTjmaxjmax is not exceeded.<br>S SK r | | | dt dT dt ht 4. PD (ave) = Average power dissipation per single avalanche pulse.D (ave) = Average power dissipation per single avalanche pulse.= Average power dissipation per single avalanche pulse.<br>150<br>during avalanche).<br>S SE 6. Iav = Allowable avalanche current.<br>100 7. ∆T = Allowable rise in junction temperature, not to exceed∆T = Allowable rise in junction temperature, not to exceedT = Allowable rise in junction temperature, not to exceed = Allowable rise in junction temperature, not to exceedAllowable rise in junction temperature, not to exceed Tjmax (assumed as<br>25°C in Figure 14, 15).<br>S CT<br>tav = Average time in avalanche.<br>50 D = Duty cycle in avalanche =  tav ·f<br>H EBERT ZthJC(D, tav) = Transient thermal resistance, see Figures 13)thJC(D, tav) = Transient thermal resistance, see Figures 13)(D, tav) = Transient thermal resistance, see Figures 13)av) = Transient thermal resistance, see Figures 13)) = Transient thermal resistance, see Figures 13)<br>ELLE ESSAY<br>0<br>25 50 75 100 125 150 175 PD (ave) = 1/2 ( 1.3·BV·Iav) =D (ave) = 1/2 ( 1.3·BV·Iav) = = 1/2 ( 1.3·BV·Iav) =av) =) = A T/ ZthJCthJC<br>Iav =av == 2 A T/ [1.3·BV·Zth]th]]<br>Starting TJ , Junction Temperature (°C) EAS (AR) = PD (ave)·tav  = PD (ave)·tav ·tav<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


- Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type.jmax. This is validated for every part type.. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long asTjmaxjmax is not exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 

4. PD (ave) = Average power dissipation per single avalanche pulse.D (ave) = Average power dissipation per single avalanche pulse.= Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

7. ∆T = Allowable rise in junction temperature, not to exceed∆T = Allowable rise in junction temperature, not to exceedT = Allowable rise in junction temperature, not to exceed = Allowable rise in junction temperature, not to exceedAllowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). 

- ZthJC(D, tav) = Transient thermal resistance, see Figures 13)thJC(D, tav) = Transient thermal resistance, see Figures 13)(D, tav) = Transient thermal resistance, see Figures 13)av) = Transient thermal resistance, see Figures 13)) = Transient thermal resistance, see Figures 13) 

**PD (ave) = 1/2 ( 1.3·BV·Iav) =D (ave) = 1/2 ( 1.3·BV·Iav) = = 1/2 ( 1.3·BV·Iav) =av) =) =** A **T/ ZthJCthJC Iav =av == 2** A **T/ [1.3·BV·Zth]th]] EAS (AR) = PD (ave)·tav** 

**Fig 15.** Maximum Avalanche Energy vs. Temperature 

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3.0 14<br>IF = 78A<br>2.5 Pt | tT tt tT tt 12 V R = 34V TT yi<br>TJ = 25°C<br>S e eeeeeeEe Ht<br>10<br>2.0 PT oSS|  OSEPet TJ = 125°C nea—<br>8<br>1.5 P t tT | AN eS |<br>CPR 6 |<br>ID = 250µA<br>1.0<br>ID = 1.0mA Z|<br>4<br>ID = 1.0A Z2gGGNN A<br>EE K yt<br>0.5<br>2<br>at t tt | yt | | |<br>0.0 PEE EEE EEE P t<br>0 | ft ft<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>0 100 200 300 400 500<br>TJ , Temperature ( °C )<br>diF /dt (A/µs)<br>Fig. 17 - Typical Recovery Current vs. di;/dt<br>Fig 16.   Threshold Voltage vs. Temperature<br>14 400<br>IF = 117A IF = 78A<br>12 V R = 34V VR = 34V<br>TJ = 25°C 300 TJ = 25°C<br>10<br>TJ = 125°C ae TJ = 125°C =<br>8<br>oe ee<br>200<br>6<br>4<br>T AT L Ar<br>100<br>A PPA |.<br>2<br>| | |<br>0 | 0 O EP<br>0 100 200 300 400 500 0 100 200 300 400 500<br>diF /dt (A/µs) diF /dt (A/µs)<br>IRRM (A)<br>VGS(th), Gate threshold Voltage (V)<br>IRRM (A) QRR (A)<br>**----- End of picture text -----**<br>


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400<br>IF = 117A<br>VR = 34V<br>300 TJ = 25°C |e<br>TJ = 125°C<br>ee e<br>200<br>Ee 4nn<br>100<br>a nne<br>0<br>0 100 200 300 400 500<br>diF /dt (A/µs)<br>QRR (A)<br>**----- End of picture text -----**<br>


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Driver Gate Drive<br>P.W.<br>D.U.T + {+ P.W. Period ——— — D = —— Period<br>) [©)]    •  CircuitLow  LayoutStray ConsiderationsInduct | t V t GS=10<br> •<br>- •   Low Leakage Inductance @ D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oi - [1] Current Transformer - ® + Current r Current di/dt AN<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘<br>00 a VDD<br>ma<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( 4 •   dv/dt controlled by Rg Vpp -<br>•<br>D.U.T. - Device Under Test SOO |<br>Ripple  ≤ 5% ISD<br>Isp controlled by Duty Factor "D" @| t<br>* Vg = 5V for Logic Level Devices<br>Fig 21.  Peak Diode Recovery dv/dt Test Circuit for N-Channel<br>HEXFET ® Power MOSFETs<br>V(BR)DSS(BR)DSS<br>15V —_ tp -><br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS A<br>¢ 20VVGS dt<br>tp 0.01Ω<br>**----- End of picture text -----**<br>


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V(BR)DSS(BR)DSS<br>—_ tp -><br>IAS<br>**----- End of picture text -----**<br>


## **Fig 22b.** Unclamped Inductive Waveforms 

**Fig 22a.** Unclamped Inductive Test Circuit 

**==> picture [130 x 58] intentionally omitted <==**

**----- Start of picture text -----**<br>
+<br>-<br>≤ 1<br>≤ 0.1 %<br>**----- End of picture text -----**<br>


## **Fig 23a.** Switching Time Test Circuit 

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**----- Start of picture text -----**<br>
Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF .3µF ||<br>+<br>D.U.T. -VDS<br>VGS<br>3mA<br>WAV IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 24a.** Gate Charge Test Circuit 

**==> picture [192 x 121] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDS<br>90%<br>\<br>10% /\<br>VGS «le ys<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig 23b.   Switching Time Waveforms<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Id<br>Vds<br>fl Vgs<br>i<br>Vgs(th)<br>a plag [p] [l] [e] w i e » !<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 24b.** Gate Charge Waveform 

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## TO-262 Package Outline Dimensions are shown in millimeters (inches) 

## TO-262 Part Marking Information 

www.irf.com 

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Dimensions are shown in millimeters (inches) 

**==> picture [19 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
TRR<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)<br>1.50 (.059)<br>3.90 (.153) 0.368 (.0145)<br>!00°00He | i , Te 0.342 (.0135)<br>4______ OS OO 4/8 @ -<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 24.30 (.957)<br>15.42 (.609)<br>23.90 (.941)<br>15.22 (.601)<br>TRL<br>| x<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>**----- End of picture text -----**<br>


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FEED DIRECTION<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941) 1<br>4<br>330.00(14.173) \ 60.00 (2.362)      MIN.<br>  MAX.<br>i) x<br>30.40 (1.197)<br>NOTES :       MAX.<br>1.   COMFORMS TO EIA-418.<br>26.40 (1.039) 4<br>2.   CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)<br>3.   DIMENSION MEASURED @ HUB.<br>3<br>**----- End of picture text -----**<br>


4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 07/2009 

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- [View this product on Novapart](https://novapart.co/products/IRLS3034TRLPBF/power-mosfet-n-channel-40-v-195-a-1700-ohm-to-263)
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- [Supplier page](https://es.farnell.com/infineon/irls3034trlpbf/mosfet-n-ch-40v-195a-to-263-3/dp/2803430)
---

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