# Power MOSFET, N Channel, 30 V, 86 A, 5800 µohm, TO-252AA, Surface Mount

![Product image](https://novapart.co/image/farnell:2726025/)

**URL**: https://novapart.co/products/IRLR8726TRPBF/power-mosfet-n-channel-30-v-86-a-5800-ohm-to-252aa
**SKU**: IRLR8726TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1890
**Stock**: 1000+
**Lead Time**: 64 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:86A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.004ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Po

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 75W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252AA |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 86A |
| Drain Source On State Resistance | 5800µohm |
| Gate Source Threshold Voltage Max | 1.8V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2726025/)

## PD - 97146A IRLR8726PbF IRLU8726PbF 

## **Applications** 

High Frequency Synchronous Buck Converters for Computer Processor Power High Frequency Isolated DC-DC 

Converters with Synchronous Rectification for Telecom and Industrial Use 

## **Benefits** 

Very Low RDS(on) at 4.5V VGS 

Ultra-Low Gate Impedance 

> e Fully Characterized Avalanche Voltage and Current 

> e Lead-Free RoHS compliant 

## HEXFET ® Power MOSFET 

|**VDSS**|**RDS(on) max**|**Qg (typ.)**|
|---|---|---|
|**30V **|**5.8m @VGS = 10V**|**15nC**|



|D<br>G<br>D<br>eS.<br>oi|S|D<br>~~ <br>‘|D<br>G<br> ng|S|
|---|---|---|---|---|
|D-Pak||I-Pak|||
|IRLR8726PbF||IRLU8726PbF|||



|**G**|**D**|**S**|
|---|---|---|
|Gate|Drain|Source|



## **Absolute Maximum Ratings** 

||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VDS|Drain-to-Source Voltage<br>~~a~~|30<br>~~a~~|V|
|VGS|Gate-to-Source Voltage<br>~~a~~|± 20<br>~~a~~||
|ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V<br>~~a~~|86<br>~~a~~|A|
|ID@ TC= 100°C|Continuous Drain Current, VGS@ 10V<br>~~a~~|61<br>~~a~~||
|IDM|Pulsed Drain Current<br>~~a~~|340<br>~~a~~||
|PD@TC= 25°C|Maximum Power Dissipation<br>~~a~~|75<br>~~a~~|W|
|PD@TC= 100°C<br>~~a~~|Maximum Power Dissipation<br>~~ee~~<br>~~a~~|38<br>~~ee~~<br>||
|~~a~~|Linear Derating Factor<br>~~ee~~<br>~~apf~~|0.5<br>~~ee~~<br>~~pf~~|W/°C|
|TJ<br>TSTG<br>~~a~~|Operating Junction and<br>Storage Temperature Range<br>~~apf~~|-55  to + 175<br>~~pf~~|°C|
||Soldering Temperature, for 10 seconds<br>~~pf~~|300 (1.6mm from case)<br>~~pf~~||



## **Thermal Resistance** 

||**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RθJC|Junction-to-Case<br>~~a~~|–––<br>~~a~~|2.0<br>~~a~~|°C/W|
|RθJA|Junction-to-Ambient(PCB Mount)<br>~~pm~~|–––<br>~~pm~~|50<br>~~pm~~||
|RθJA|Junction-to-Ambient<br>~~a~~|–––<br>~~a~~|110<br>~~a~~||



> Notes ® hrough © are on page 11 

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**Static @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**<br>~~Ps~~|**Typ.**<br>~~I~~|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|BVDSS|Drain-to-Source Breakdown Voltage<br>~~es~~<br>~~PE~~|30<br>~~es~~<br>~~Ps~~<br>~~PE~~|–––<br>~~es~~<br>~~I~~<br>~~Gd~~<br>|–––<br>~~es~~<br>|V<br>~~es~~<br>|VGS= 0V,ID= 250µA<br>~~es~~<br>|
|∆ΒVDSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~en~~<br>~~PE~~|–––<br>~~Ps ~~<br>~~en~~<br>~~PE~~<br>~~|~~|20<br> ~~I~~<br>~~en~~<br>~~Gd~~<br>~~SE~~<br>~~|~~|–––<br>~~en~~<br>~~SE~~<br>|mV/°C<br>~~en~~<br>~~SE~~|Reference to 25°C,ID= 1mA<br>~~en~~<br>~~SE~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~en~~<br>~~PE~~<br>~~SSS~~|–––<br>~~en~~<br>~~PE~~<br>~~|~~|4.0<br>~~en~~<br>~~Gd~~<br>~~SE~~<br>~~|~~|5.8<br>~~en~~<br>~~SE~~<br>|mΩ<br>~~en~~<br>~~SE~~|VGS= 10V,ID= 25A<br>~~en~~<br>~~SE~~|
|||–––<br>~~PE~~<br>~~|~~<br>~~SSS~~|5.8<br>~~Gd~~<br>~~SE~~<br>~~| |~~<br>~~SSS~~|8.0<br>~~SE~~<br>~~|~~<br>~~SSS~~||VGS= 4.5V,ID= 20A<br>~~SE~~<br>~~©~~<br>~~ee~~|
|VGS(th)|Gate Threshold Voltage<br>~~PE~~<br>~~SSS~~|1.35<br>~~PE ~~<br>~~|~~<br>~~SSS~~<br>~~ee~~|1.80<br>~~Gd~~<br> ~~SE~~<br>~~| |~~<br>~~SSS~~<br>~~es~~|2.35<br>~~SE~~<br>~~|~~<br>~~SSS~~|V<br>~~SE~~|VDS= VGS, ID= 50µA<br>~~SE~~<br>~~©~~<br>~~ee~~<br>~~LE~~|
|∆VGS(th)/∆TJ|Gate Threshold Voltage Coefficient<br>~~SSS~~<br>~~es~~|–––<br><br>~~SSS~~<br>~~es~~<br>~~ee~~<br>~~|~~|-8.6<br>~~|~~<br>~~SSS~~<br>~~es~~<br>~~es~~<br>~~|~~|–––<br>~~|~~<br>~~SSS~~<br>~~es~~<br>~~LE~~<br>|mV/°C<br>~~es~~<br>~~LE~~||
|IDSS|Drain-to-Source Leakage Current<br>~~SSS ~~<br>~~PS~~|–––<br><br> ~~SSS~~<br>~~ee~~<br>~~PS~~<br>~~|~~|–––<br>~~|~~<br>~~SSS~~<br>~~es~~<br>~~PS~~<br>~~|~~|1.0<br>~~|~~<br>~~SSS~~<br>~~PS~~<br>~~LE~~<br>|µA<br>~~PS~~<br>~~LE~~|VDS= 24V,VGS= 0V<br>~~©~~<br>~~ee~~<br>~~PS~~<br>~~LE~~|
|||–––<br>~~PS~~<br>~~|~~|–––<br>~~PS~~<br>~~||~~|150<br>~~PS~~<br>~~LE~~<br>~~|~~||VDS= 24V,VGS= 0V,TJ= 125°C<br>~~PS~~<br>~~LE~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~PS~~<br>~~[LE~~<br>~~|~~|–––<br>~~PS~~<br>~~|~~<br>~~[LE~~<br>~~|~~<br>~~|~~|–––<br>~~PS~~<br>~~||~~<br>~~[LE~~<br>~~|~~|100<br>~~PS~~<br>~~LE~~<br>~~|~~<br>~~[LE~~<br>~~|~~|nA<br>~~PS~~<br>~~LE~~<br>~~[LE~~|VGS= 20V<br>~~PS~~<br>~~LE~~<br>~~[LE~~|
||Gate-to-Source Reverse Leakage<br>~~[LE~~<br>~~|~~|–––<br>~~[LE~~<br>~~|~~<br>~~|~~<br>~~Gs~~|–––<br>~~[LE~~<br>~~|~~<br>~~ss~~|-100<br>~~[LE~~<br>~~|~~<br>~~ss~~||VGS= -20V<br>~~[LE~~|
|gfs|Forward Transconductance<br>~~|~~<br>~~es~~|73<br>~~|~~<br>~~|~~<br>~~es~~<br>~~Gs~~<br>~~ee~~|–––<br>~~|~~<br>~~es~~<br>~~ss~~<br>~~ee~~|–––<br>~~|~~<br>~~es~~<br>~~ss~~|S<br>~~es~~|VDS= 15V,ID= 20A<br>~~es~~|
|Qg|Total Gate Charge<br>~~es~~|–––<br>~~Gs ~~<br>~~es~~<br>~~ee~~<br>~~ee~~|15<br> ~~ss~~<br>~~es~~<br>~~ee~~<br>~~es~~|23<br>~~ss~~<br>~~es~~|nC|See Fig. 15<br>VDS= 15V<br>VGS= 4.5V<br>ID= 20A|
|Qgs1|Pre-Vth Gate-to-Source Charge<br>~~es~~|–––<br>~~ee ~~<br>~~es~~<br>~~ee~~<br>~~ee~~|3.7<br> ~~ee~~<br>~~es~~<br>~~es~~<br>~~ee~~|–––<br>~~es~~|||
|Qgs2|Post-Vth Gate-to-Source Charge<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|1.9<br>~~es~~<br>~~es~~<br>~~ee~~<br>~~es~~|–––<br>~~es~~|||
|Qgd|Gate-to-Drain Charge<br>~~es~~|–––<br>~~ee ~~<br>~~es~~<br>~~ee~~<br>~~ee~~|5.7<br> ~~ee~~<br>~~es~~<br>~~es~~<br>~~ee~~|–––<br>~~es~~|||
|Qgodr|Gate Charge Overdrive<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|3.7<br>~~es~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|||
|Qsw|Switch Charge(Qgs2+Qgd)<br>~~es~~|–––<br>~~ee ~~<br>~~es~~<br>~~ee~~<br>~~te~~|7.6<br> ~~ee~~<br>~~es~~<br>~~ee~~<br>~~Gn~~|–––<br>~~es~~<br>~~ed~~|||
|Qoss|Output Charge<br>~~es~~<br>~~rs~~<br>~~es~~|–––<br>~~es~~<br>~~ee~~<br>~~rs~~<br>~~te~~<br>~~Ps~~<br>|10<br>~~es~~<br>~~ee~~<br>~~rs~~<br>~~Gn~~<br>~~es~~<br>|–––<br>~~es~~<br>~~rs~~<br>~~ed~~|nC<br>~~rs~~|VDS= 15V,VGS= 0V<br>~~rs~~|
|RG|Gate Resistance<br>~~rs~~<br>~~es~~<br>~~es~~|–––<br>~~rs~~<br>~~te ~~<br>~~es~~<br>~~Ps~~<br>~~ee~~|2.0<br>~~rs~~<br> ~~Gn~~<br>~~es~~<br>~~es~~<br>~~ee~~|3.5<br>~~rs~~<br>~~ed~~<br>~~es~~|Ω<br>~~rs~~<br>~~es~~|~~rs~~<br>~~es~~<br>©|
|td(on)|Turn-On DelayTime<br>~~es~~|–––<br>~~Ps~~<br>~~ee~~<br>~~ee~~|12<br>~~es~~<br>~~ee~~<br>~~es~~|–––|ns|VDD= 15V, VGS= 4.5V<br>ID= 20A<br>See Fig. 13<br>RG= 1.8Ω<br>©|
|tr|Rise Time<br>~~es ~~<br>~~es~~|–––<br>~~Ps ~~<br> ~~ee ~~<br>~~es~~<br>~~ee~~<br>~~ee~~|49<br> ~~es~~<br> ~~ee~~<br>~~es~~<br>~~es~~<br>~~ee~~|–––<br>~~es~~|||
|td(off)|Turn-Off DelayTime<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|15<br>~~es~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|||
|tf|Fall Time<br>~~es~~|–––<br>~~ee ~~<br>~~es~~<br>~~ee~~<br>~~ee~~|16<br> ~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|||
|Ciss|Input Capacitance<br>~~es~~<br>~~ee~~|–––<br>~~es~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|2150<br>~~es~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~es~~|–––<br>~~es~~<br>~~ee~~|pF|ƒ= 1.0MHz<br>VGS= 0V<br>VDS= 15V|
|Coss|Output Capacitance<br>~~es~~|–––<br>~~ee ~~<br>~~es~~<br>~~ee~~<br>~~ee~~|480<br> ~~ee~~<br>~~es~~<br>~~es~~<br>~~es~~|–––<br>~~es~~|||
|Crss|Reverse Transfer Capacitance<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|205<br>~~es~~<br>~~ee~~<br>~~es~~|–––<br>~~ee~~|||



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1000<br>VGS<br>TOP           10V<br>5.0V<br>Pe 4.5V<br>3.5V<br>100 ee ell 3.3V<br>3.0V<br>LAA BOTTOM 2.7V2.5V<br>C4<br>10 Ae eeeee<br>FEET ei tHE<br>1<br>——==2.e ≤ 60µs PULSE WIDTH Hy<br>Tj = 25°C<br>PE econ<br>Pt TY 2.5V<br>0.1 ee pt<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br>1000<br>a ee ee ee ee eee<br>100<br>a2 258<br>10<br>TJ = 175°C<br>rs se<br>T = 25°C<br>J<br>1<br>BHR<br>VDS = 15V<br>re<br>≤ 60µs PULSE WIDTH<br>0.1 Sore<br>0.0 2.0 4.0 6.0 8.0<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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1000<br>VGS<br>TOP           10V<br>5.0V<br>PA 4.5V<br>3.5V<br>PAIN Ae 3.3V<br>3.0V<br>100 ———S BOTTOM 2.7V2.5V<br>2 —<br>7eeeee al<br>10 A | Il<br>a 2.5V TH<br>fe 1 ||| ≤ 60µs PULSE WIDTH |<br>Tj = 175°C<br>at | mee<br>1 TT<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>2.0<br>ID = 25A<br>VGS = 10V Fe<br>LL L)<br>1.5<br>~~<br>1.0<br>LA<br>(CE<br>PELL<br>0.5<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Junction Temperature (°C)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance vs. Temperature 

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10000 12<br>VGS   = 0V,       f = 1 MHZ ID= 20A<br>Ciss   = Cgs + Cgd,  Cds SHORTED<br>Crss   = Cgd  10 VDS= 24V<br>Coss  = Cds + Cgd VDS= 15V<br>To] ae<br>Ciss 8<br>— oe Lh ~H<br>1000 6<br>MT) EEA<br>Coss<br>4<br>Crss<br>2<br>S S S) = C-PZ<br>anima 0<br>100<br>0 4 8 12 16 20 24 28 32 36 40<br>1 10 100<br> QG  Total Gate Charge (nC)<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance vs. Fig 6.   Typical Gate Charge vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>1000 10000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)(on)<br>TJ = 175°C 1000<br>100<br>1 00µ secec<br>100<br>1 ms ecc<br>10<br>TJ = 25°C 10mse c<br>10<br>1<br>1 TC= 25°CC= 25°C= 25°C<br>TJ= 175°CJ= 175°C= 175°C<br>VGS = 0V Single Pulse<br>0.1 0.1<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.1 1 10 100<br>VSD, Source-to-Drain Voltage (V) VDS,  Drain-toSource Voltage (V)<br>ISD, Reverse Drain Current (A)<br>VGS, Gate-to-Source Voltage (V)<br>C, Capacitance (pF)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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10000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)(on)<br>1000<br>1 00µ secec<br>100<br>1 ms ecc<br>10mse c<br>10<br>1 TC= 25°CC= 25°C= 25°C<br>TJ= 175°CJ= 175°C= 175°C<br>Single Pulse<br>0.1<br>0.1 1 10 100<br>VDS,  Drain-toSource Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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100 2.5<br>LIMITED BY PACKAGE ID = 500µA<br>80 ID = 50µA<br>WAtit) 2.0 ID = 25µA<br>60<br>Ars, | | B ERN SNCUE<br>1.5<br>40<br>a] PA<br>20 1.0<br>PEEL | LLL.<br>0 PPP NOLL<br>0.5<br>25 50 75 100 125 150 175<br>-75 -50 -25 0 25 50 75 100 125 150 175<br> TC , Case Temperature (°C)<br>TJ , Temperature ( °C )<br>Fig 9.   Maximum Drain Current vs. Fig 10.   Threshold Voltage vs. Temperature<br>Case Temperature<br>10<br>1 D = 0.50<br>0.20<br>0.1 0.020.010.10 0.05 τ J τJτ1 τ1 R1 R1 τ2 Rτ22 R2 Rτ33 R τ3 3 τR4 τ4R4 4 τCτ Ri  0.014297 0.3733121.010326(°C/W) 0.000003 0.000973τι 0.00009(sec)<br>Ci= Ciτi/Rii/Ri 0.602065 0.007272<br>0.01<br>SINGLE PULSE Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>ID , Drain Current (A)<br>VGS(th) Gate threshold Voltage (V)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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500<br>                 I<br>D<br>TOP          5.6A<br>400                 8.2A<br>BOTTOM   20A<br>300<br>\EE<br>200<br>PACT<br>100<br>RNNenn<br>iS<br>0<br>25 50 75 100 125 150 175<br>Starting TJ, Junction Temperature (°C)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12a.** Maximum Avalanche Energy Vs. Drain Current 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>yt 20VVGS<br>tp 0.01Ω<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Test Circuit 

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-<br>≤ 1<br>≤ 0.1 %<br>**----- End of picture text -----**<br>


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V(BR)DSS<br><< tp ><br>/ al<br>/<br>IAS<br> Unclamped Inductive Waveforms<br>VDS<br>90%<br>10%<br>VGS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 12c.** Unclamped Inductive Waveforms 

**Fig 13a.** Switching Time Test Circuit 

**Fig 13b.** Switching Time Waveforms 

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Driver Gate Drive<br>P.W.<br>D.U.T + {+ P.W. Period ——— — D = —— Period<br>) [©)]    • Circuit Layout Considerations | V |t x GS=10V<br>•<br>| =] - LowGround StrayPla I n eductance<br>•   Low Leakage Inductance 2) D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oi - [l] Current Transformer - ® + Current r Current di/dt NN<br>® D.U.T. VDS Waveform Diode Recovery<br>® + 0 dv/dt \ + VDD<br>•   Re-Applied<br>Re ) •   dv/dtDriver controlledsame type byas RgD.U.T. Vop** + Voltage Body Diode  Forward Drop =<br>•   - Inductor Curent<br>•<br>D.U.T. - Device Under Test SO<br>(7) Isp controlled by Duty Factor "D" @ Ripple  ≤ 5% ISD<br>* Use P-Channel Driver for P-Channel Measurements *** \/.5 = 5V for Logic Level Devices<br>** Reverse Polarity for P-Channel<br>Fig 14.  Diode Reverse Recovery Test Circuit for HEXFET ®  Power MOSFETs<br>Id<br>Vds<br>Vgs<br>L<br>VCC<br>DUT<br>0<br>201 K S Vgs(th)<br>4 ____ p 4 5  '< 5 !<br>Qgodr Qgd Qgs2 Qgs1<br>**----- End of picture text -----**<br>


## **Fig 15.** Gate Charge Test Circuit 

**Fig 16.** Gate Charge Waveform 

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**Note: For the most current drawing please refer to IR website at http://www.irf.com/package/** 

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**Note: For the most current drawing please refer to IR website at http://www.irf.com/package/** www.irf.com 

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TR TRR TRL<br>OOOO O © } o> oO © :<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>**----- End of picture text -----**<br>


## NOTES : 

1.  CONTROLLING DIMENSION : MILLIMETER. 

2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 

3.  OUTLINE CONFORMS TO EIA-481 & EIA-541. 

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  13 INCH<br>16 mm<br>**----- End of picture text -----**<br>


NOTES : 

1. OUTLINE CONFORMS TO EIA-481. 

**Note: For the most current drawing please refer to IR website at http://www.irf.com/package/** 

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|**Orderable part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Note**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|IRLR8726PBF|D-PAK|Tube/Bulk|75||
|IRLR8726TRPBF|D-PAK|Tape and Reel|2000||
|IRLU8726PBF|I-PAK|Tube/Bulk|75||



## **Qualification information**[†] 

## **D-PAK** 

|**D-PAK**<br>**Qualification information**[†]||
|---|---|
|Qualification level|Consumer††|
|Moisture Sensitivity Level|MS L1|
||(per JEDE C J-S T D-020D<br>†††)|
|RoHS compliant|Yes|



## **I-PAK** 

|**I-PAK**||
|---|---|
|Qualification level|Industrial|
|Moisture Sensitivity Level|Not applicable|
|RoHS compliant|Yes|



Tt Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability ee tt Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ 

Repetitive rating;  pulse width limited by max. junction temperature. 

Starting TJ = 25°C, L = 0.605mH, RG = 25Ω, IAS = 20A. 

Pulse width ≤ 400µs; duty cycle ≤ 2%. 

Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 50A. 

When mounted on 1" square PCB (FR-4 or G-10 Material).For recommended footprint and soldering techniques refer to application note #AN-994. 

θ 

Data and specifications subject to change without notice. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 11/2009 

www.irf.com 

11 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRLR8726TRPBF/power-mosfet-n-channel-30-v-86-a-5800-ohm-to-252aa)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irlr8726trpbf/mosfet-n-ch-30v-86a-to-252aa/dp/2726025)
---

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