# Power MOSFET, N Channel, 30 V, 91 A, 0.0069 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:8651299/)

**URL**: https://novapart.co/products/IRLR8103VPBF/power-mosfet-n-channel-30-v-91-a-00069-ohm-to-252
**SKU**: IRLR8103VPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.5500
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 115W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 115W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.0069ohm |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 91A |
| Drain Source On State Resistance | 0.0069ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:8651299/)

## PD - 95093A 

## IRLR8103VPbF 

- N-Channel Application-Specific MOSFETs 

- Ideal for CPU Core DC-DC Converters 

- Low Conduction Losses 

- Low Switching Losses 

- Minimizes Parallel MOSFETs for high current applications 

- 100% RG Tested 

- Lead-Free 

## **Description** 

This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DCDC converters that power the latest generation of microprocessors. 

The IRLR8103V has been optimized  for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRLR8103V offers an extremely low combination of Qsw & RDS(on) for reduced losses in both control and synchronous FET applications. 

The package is designed for vapor phase, infra-red, convection, or wave soldering techniques.  Power dissipation of greater than 2W is possible in a typical PCB mount application. 

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DEVICE CHARACTERISTICS<br>IRLR8103V<br>R 7.9 mΩ<br>DS(on)<br>QG 27 nC<br>QSW 12 nC<br>QOSS 29nC<br>==<br>**----- End of picture text -----**<br>


## DEVICE CHARACTERISTICS 

## **Absolute Maximum Ratings** 

|**Absolute Maximum Ratings**|**Absolute Maximum Ratings**||||
|---|---|---|---|---|
|**Parameter**||**Symbol**<br>~~ee~~|**IRLR8103V**<br>~~ee~~|**Units**<br>~~ee~~|
|Drain-Source Voltage||VDS<br>~~ee~~|30<br>~~ee~~|V<br>~~ee~~|
|Gate-Source Voltage<br>~~e~~<br>~~@~~||VGS<br>~~ee~~<br>~~4~~<br>~~ee~~|±20<br>~~ee~~<br>~~**e**e~~||
|Continuous Drain or Source Current                   TC = 25°C<br>~~@~~|Continuous Drain or Source Current                   TC = 25°C<br>~~e~~|ID<br>~~4~~<br>~~ee~~|91<br>~~**e**e~~|A<br>~~eee~~|
|(VGS> 10V)<br>~~@~~|TC= 90°C<br>~~e~~||63<br>~~**e**e~~||
|Pulsed Drain Current<br>~~e~~<br>~~@~~<br>~~°~~||IDM<br>~~ee~~<br>~~e~~<br>~~ae eee~~|363<br>~~**e**e~~<br>~~e~~<br>~~eee~~||
|Power Dissipation<br>~~@~~<br>~~°~~|C = 25°C<br>~~e~~|PD<br>~~ee ~~<br>~~e~~<br>~~ae eee~~<br>~~ee~~|115<br> ~~**e**e~~<br>~~e~~<br>~~eee~~|W<br>~~eee~~|
||TC = 90°C||60<br>~~eee~~<br>~~es~~||
|Junction & Storage Temperature Range<br>~~°~~<br>~~g~~||TJ, TSTG<br>~~ae eee~~<br>~~ee~~<br>~~$$~~|-55  to 150<br>~~eee~~<br>~~es~~<br>~~$$~~|°C<br>~~eee~~|
|Continuous Source Current  (Body Diode)<br>~~g~~||IS<br>~~ee~~<br>~~$$~~|91<br>~~es~~<br>~~$$~~|A|
|Pulsed Source Current<br>~~g~~||ISM<br>~~$$~~|363<br>~~$$~~||



## **Thermal Resistance** 

|**Thermal Resistance**|||||
|---|---|---|---|---|
|**Parameter**|**Symbol**|**Typ.**|**Max.**|**Units**|
|Maximum Junction-to-Ambient|RθJA|–––|50|°C/W|
|Maximum Junction-to-Case|RθJC|–––|1.09||



www.irf.com 

12/0604 

## IRLR8103VPbF 

## **Electrical Characteristics** 

|**Electrical Characteristics**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**<br>~~ee~~|**Min**<br>~~ee~~|**Typ **<br>~~ee~~|**Max **<br>~~ee~~|**Units**<br>~~ee~~|**Conditions**<br>~~ee~~|
|Drain-to-Source Breakdown Voltage|BVDSS<br>~~ee~~|30<br>~~ee~~|–––<br>~~ee~~|–––<br>~~ee~~|V<br>~~ee~~|VGS= 0V, ID= 250µA<br>~~ee~~|
|Static Drain-Source<br>On-Resistance|RDS(on)<br>~~ee ~~<br>~~a~~<br>~~ee~~|–––<br> ~~ee ~~<br>~~a|~~|6.9<br> ~~ee ~~<br>~~|{|~~|9.0<br> ~~ee ~~<br>~~{|~~|mΩ<br> ~~ee~~<br>~~es~~|VGS= 10V, ID= 15A<br>~~ee~~<br>~~@~~|
|||–––<br>~~a|~~<br>~~ee~~|7.9<br>~~|{|~~<br>~~ee~~|10.5<br>~~{|~~<br>~~es~~||VGS= 4.5V, ID= 15A<br>~~@~~|
|Gate Threshold Voltage|VGS(th)<br>~~a~~<br>~~ee~~|1.0<br>~~a|~~<br>~~ee~~<br>~~PF~~|–––<br>~~| {|~~<br>~~ee~~<br>~~PF~~<br>~~{|~~|3.0<br>~~{|~~<br>~~es~~<br>~~{|~~<br>~~|~~|V<br>~~es~~<br>~~fo~~|VDS= VGS, ID= 250µA<br>~~@~~<br>~~fo~~|
|Drain-to-Source Leakage Current|IDSS<br>~~ee ~~<br>~~a~~|–––<br> ~~ee ~~<br>~~PF~~|–––<br> ~~ee ~~<br>~~PF~~<br>~~{|~~|50<br> ~~es ~~<br>~~{|~~<br>~~|~~|µA<br> ~~es~~<br>~~fo~~|VDS= 30V, VGS= 0V<br>~~fo~~|
|||–––<br>~~PF~~<br>~~**|**~~|–––<br>~~PF~~<br>~~{|~~<br>~~ee~~<br>~~**|**~~|20<br>~~{|~~<br>~~|~~<br>~~ee~~|µA<br>~~fo~~<br>~~ee~~<br>~~es~~|VDS= 24V, VGS= 0<br>~~fo~~<br>~~ee~~|
|||–––<br>~~**|**~~<br>~~es~~|–––<br>~~ee~~<br>~~**|**~~<br>~~ee~~|100<br>~~ee~~<br>~~es~~||VDS= 24V, VGS= 0, TJ= 100°C<br>~~ee~~|
|Gate-Source Leakage Current|IGSS<br>~~a~~|–––<br>~~**|**~~<br>~~es~~<br>~~ee~~|–––<br>~~**|**~~<br>~~ee~~<br>~~ee~~|±100<br>~~es~~<br>~~ee~~|nA<br>~~es~~<br>~~ee~~|VGS= ± 20V|
|Total Gate Charge,Control FET|QG<br>~~a~~<br>~~ee~~|–––<br>~~es ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|27<br> ~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br> ~~es~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|nC<br>~~es~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~es~~|VGS= 5V, ID= 15A, VDS= 16V|
|Total Gate Charge,Synch FET|QG<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|23<br> ~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~||VGS= 5V, VDS< 100mV|
|Pre-Vth Gate-Source Charge|QGS1<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|4.7<br> ~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~||VDS= 16V, ID= 15A|
|Post-Vth Gate-Source Charge|QGS2<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|2.0<br> ~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|||
|Gate to Drain Charge|QGD<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|9.7<br> ~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|||
|Switch Charge(Qgs2+ Qgd)|QSW<br>~~ee~~<br>~~a~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|12<br> ~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|||
|Output Charge|QOSS<br>~~ee~~<br>~~a~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~es~~|29<br> ~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~||VDS= 16V, VGS= 0|
|Gate Resistance|RG<br>~~ee~~<br>~~a~~|0.8<br>~~ee~~<br>~~ee ~~<br>~~es~~<br>~~ee~~|–––<br>~~ee~~<br> ~~ee ~~<br>~~ee~~<br>~~ee~~|3.1<br>~~ee~~<br> ~~ee~~<br>~~ee~~<br>~~ee~~|Ω<br>~~es~~<br>~~ee~~||
|Turn-On DelayTime|td(on)<br>~~ee~~|–––<br>~~es ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|10<br> ~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|ns<br>~~es~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|VDD= 16V<br>ID= 15A<br>VGS= 5.0V<br>Clamped Inductive Load|
|Rise Time|tr<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|9<br> ~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|||
|Turn-Off DelayTime|td(off)<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|24<br> ~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|||
|Fall Time|tf<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|18<br> ~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|||
|Input Capacitance|Ciss<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|2672<br>~~ee~~<br> ~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|pF<br>~~ee~~<br>~~ee~~<br>~~ee~~|VGS= 16V, VGS=0|
|Output Capacitance|Coss<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|1064<br> ~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|||
|Reverse Transfer Capacitance|Crss<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~|109<br> ~~ee ~~<br>~~ee~~<br>~~ee~~|–––<br> ~~ee~~<br>~~ee~~<br>~~ee~~|||



## **Notes:** 

Repetitive rating; pulse width limited by max. junction temperature. 

Pulse width ≤ 400 µs; duty cycle ≤ 2%. 

When mounted on 1 inch square copper board, t < 10 sec. 

> Typ = measured - Qoss 

ypical values of RDS(on) measured at VGS = 4.5V, QG, QSW and QOSS measured at VGS = 5.0V, IF = 15A. 

www.irf.com 

2 

## IRLR8103VPbF 

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 1000<br>VGS<br>TOP 15V<br>10V<br>7.0V<br>5.5V<br>4.5V<br>4.0V<br>3.5V<br>BOTTOM2.7V<br> 100<br>2.7V<br>F geen ea<br> 10<br>PAC oA o<br>PFE<br>See IT 20µs PULSE WIDTHT  = 25J °C<br> 1<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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 1000<br>VGS<br>TOP 15V<br>10V<br>7.0V<br>5.5V<br>4.5V<br>4.0V<br>3.5V<br>BOTTOM 2.7V<br> 100<br>B e 2.7V e<br> 10<br>Ae SS EM<br>Ht<br>TSeine HI t 20µs PULSE WIDTHT  = 150J H °C Ht<br> 1<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


## **Fig 1.** Typical Output Characteristics 

## **Fig 2.** Typical Output Characteristics 

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 1000 2.0<br>ID = 15A<br>=== PELLET<br>bp ETE EEE<br>ee ELLE<br>T  = 25  CJ ° 1.5<br>A eae i<br> 100 a EEpZdaeeeeet eat T  = 150  CJ ° 1.0 ELE LTELA<br>== eee cctttnniil<br>rT<br>AR TET<br>a PELLET<br>P| | [ [| | [ | [ [| 0.5<br>V      = 15VDS<br>p a 20µs PULSE WIDTH ELL E EE VGS = 10V<br> 10 0.0<br>2.0 3.0 4.0 5.0 6.0 7.0 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>V     , Gate-to-Source Voltage (V)GS T  , Junction TemperatureJ (  C)°<br>(Normalized)<br>D<br>I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

www.irf.com 

3 

## IRLR8103VPbF 

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5000 VGS = 0V, f = 1MHz 6 ID = 15A<br>a Ciss = Cgs + Cgd , C      SHORTEDds F TA VDS= 24V<br>Crss = Cgd VDS= 15V<br>4000 Coss = Cds + Cgd 5<br>4<br>3000 E No Ciss e EEREWV<br>NX FT tT tT T_T TL ILAL LC<br>PNA tetoi TTT 3 PET ArWA<br>2000<br>Coss rr<br>2<br>1000<br>| HEE<br>1<br>TL Py] Ao<br>0 e e + Crss ir 7]lll Zn(<br>0<br> 1  10  100<br>0 5 10 15 20 25 30<br>V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)G<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 1000  10000<br>OPERATION IN THIS AREA LIMITED<br>BY RDS(on)<br> 100  1000<br>|| T  = 150  CJJ ° ert 20<br>10us<br>Py A P nea ae eens ea<br> 10  100<br>See 4GeGeeeee reac UG<br>100us<br>T  = 25  CJJ °<br>HS PR S 1ms<br> 1  10<br>Pi iy | | tt | D c ll<br> T TCJ = 25  C= 150  C° ° 10ms<br>0.1 EEE V      = 0 V GSGS  1  Single Pulse Ons l<br>0.0 0.4 0.8 1.2 1.6 2.0 2.4  1  10  100<br>V     ,Source-to-Drain Voltage (V)SDSD V     , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D<br>I     , Reverse Drain Current (A)SDSD<br>**----- End of picture text -----**<br>


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 1000<br> 100<br>|| T  = 150  CJJ ° ert<br>Py A P<br> 10<br>See 4GeGeeeee<br>T  = 25  CJJ °<br>HS<br> 1<br>Pi iy | | tt |<br>EEE V      = 0 V GSGS<br>0.1<br>0.0 0.4 0.8 1.2 1.6 2.0 2.4<br>V     ,Source-to-Drain Voltage (V)SDSD<br>I     , Reverse Drain Current (A)SDSD<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

www.irf.com 

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## IRLR8103VPbF 

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100<br>LIMITED BY PACKAGE<br>80 |Ff| Bef pd D0<br>60<br>≤ 1<br>≤ 0.1 %<br>PT | Lesa |td + ov<br>40 FT EAP TN Ty Puce With<br>Pt | t te t ;} E ENN LI :<br>VDS<br>20 PAPEETEpitt? TT  ERtt ly 90% y— |<br>0<br>25 50 75 100 125 150<br>°<br>COE T   , Case TemperatureC (  C) eEer| 10% /\ /\ |<br>VGS<br>— YY<br>td(on) tr td(off) tf<br> 10<br>a es es es sO DQ OO OO QO QO GO<br>ee<br>Sasiasesiilemmsiiliemilee ee ee!<br> 1<br>D = 0.50<br>S S<br>0.20<br>0.10 PDM<br>e —ee<br>0.1 0.05 mee a t1<br>0.020.01 (THERMAL RESPONSE)SINGLE PULSE t2<br>S T rn<br>re || dT rT 1. Duty factor D =Notes: t   / t1 2<br>ee e 2. Peak TJ = P DM x  ZthJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


www.irf.com 

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## IRLR8103VPbF 

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**----- Start of picture text -----**<br>
0.016 a ee 0.014<br>0.014<br>T H ) E AE<br>0.012<br>a<br>0.012 | a ee ee ee ee<br>r |{| | || f pf| ft[| 0.010 e e eeee<br>VGS = 4.5V ID = 15A<br>0.010 P e ey<br>S e<br>0.008<br>VGS = 10V<br>0.008 a> A ee<br>poo | | 6fr ee ee eeee|<br>0.006 ae ee 0.006 le ell<br>0.0 2.0 4.0 6.0 8.0<br>0 50 100 150 200 250 300 350<br>ID , Drain Current ( A ) VGS, Gate -to -Source Voltage  (V)<br> )<br>Ω<br>RDS ( on ) , Drain-to-Source On Resistance (<br>)<br> Ω<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 12.** On-Resistance Vs. Drain Current 

**Fig 13.** On-Resistance Vs. Gate Voltage 

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**----- Start of picture text -----**<br>
Current Regulator<br>Same Type as D.U.T.<br>QG<br>50KΩ<br>12V .2µF<br>ais .3µF Ves Fo QGS QGD est<br>ILLii |: + tr oF ‘<br>D.U.T. -VDS<br>VG<br>VGS<br>3mA Charge<br>Or | =<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 14a&b.** Basic Gate Charge Test Circuit and Waveform 

www.irf.com 

6 

## IRLR8103VPbF 

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**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRFR120<br>PART NUMBER<br>WITH ASSEMBLY<br>INTERNATIONAL<br>LOT CODE 1234 RECTIFIER IRFU120 DATE CODE<br>ASSEMBLED ON WW 16, 1999 LOGO 916A YEAR 9 =  1999<br>IN THE ASSEMBLY LINE "A" 12 34 WEEK 16<br>LINE A<br>Note: "P" in assembly line position ASSEMBLY<br>indicates "Lead-Free" LOT CODE : : |<br>OR<br>PART NUMBER<br>INTERNATIONAL<br>RECTIFIER IRFU120 DATE CODE<br>LOGO TEAR Paica P =  DESIGNATES LEAD-FREE<br>12 34 PRODUCT (OPTIONAL)<br>YEAR 9 =  1999<br>ASSEMBLY ! : { WEEK 16<br>LOT CODE<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


www.irf.com 

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## IRLR8103VPbF 

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**----- Start of picture text -----**<br>
TR TRR TRL<br>,<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>12.1 ( .476 ) cl, FEED DIRECTION 8.1 ( .318 ) (66) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>NOTES :<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).<br>3.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>|   13 INCH<br>16 mm<br>|X a<br>**----- End of picture text -----**<br>


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NOTES :<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
1. OUTLINE CONFORMS TO EIA-481.<br>**----- End of picture text -----**<br>


Data and specifications subject to change without notice. International 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 12/04 

www.irf.com 

8 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



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> [Request a quote](https://novapart.co/quote/) — it's free and there's no
> minimum order.