# Power MOSFET, N Channel, 30 V, 65 A, 0.0075 ohm, TO-252AA, Surface Mount

![Product image](https://novapart.co/image/farnell:2726022/)

**URL**: https://novapart.co/products/IRLR7821TRPBF/power-mosfet-n-channel-30-v-65-a-00075-ohm-to
**SKU**: IRLR7821TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3040
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Power Dissipation | 75W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 75W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.0075ohm |
| Transistor Case Style | TO-252AA |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 65A |
| Drain Source On State Resistance | 0.0075ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2726022/)

## PD - 95091B IRLR7821PbF IRLU7821PbF HEXFET ® Power MOSFET 

## **Applications** 

High Frequency Synchronous Buck Converters for Computer Processor Power High Frequency Isolated DC-DC 

Converters with Synchronous Rectification for Telecom and Industrial Use Lead-Free 

## **Benefits** 

Very Low RDS(on) at 4.5V VGS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current 

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VDSS RDS(on) max Qg<br>30V 10m 10nC<br>D-Pak I-Pak<br>IRLR7821PbF IRLU7821PbF<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

|~~——~~|**Parameter**<br>~~——~~|**Max.**|**Units**|
|---|---|---|---|
|VDS<br>~~——~~|Drain-to-Source Voltage<br>~~a~~<br>~~——~~|30<br>~~a~~|V<br>~~ee~~|
|VGS<br>~~——~~|Gate-to-Source Voltage<br>~~a~~<br>~~——~~<br>~~——————~~|± 20<br>~~a~~<br>~~ee~~||
|ID@ TC= 25°C<br>~~——~~|Continuous Drain Current, VGS@ 10V<br>~~——~~<br>~~——————~~|65<br>~~ee~~|A<br>~~ee~~|
|ID@ TC= 100°C<br>~~——~~|Continuous Drain Current, VGS@ 10V<br>~~——~~<br>~~a~~<br>~~——————~~|47<br>~~a~~<br>~~ee~~||
|IDM<br>~~Ce~~|Pulsed Drain Current<br>~~——————~~<br>~~Ce~~|260<br>~~ee~~||
|PD@TC= 25°C<br>~~Ce~~|Maximum Power Dissipation<br>~~——————~~<br>~~a~~<br>~~Ce~~|75<br>~~ee~~<br>~~a~~|W<br>~~ee~~|
|PD@TC= 100°C<br>~~Ce~~|Maximum Power Dissipation<br>~~Ce~~|37.5||
|~~Ce~~|Linear Derating Factor<br>~~Ce~~|0.50<br>~~ee~~|W/°C|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range<br>~~ee~~|-55  to + 175<br>~~ee~~<br>~~ee~~|°C<br>~~ee~~|



Notes hrough are on page 11 

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**Static @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**<br>~~GO~~|**Typ.**<br>~~GO~~|**Max. **<br>~~DO~~|**Units**<br>~~DO~~|**Conditions**<br>~~DO~~|
|---|---|---|---|---|---|---|
|BVDSS|Drain-to-Source Breakdown Voltage<br>~~PD~~|30<br>~~PD~~<br>~~GO~~|–––<br>~~PD~~<br>~~GO~~|–––<br>~~PD~~<br>~~DO~~<br>~~DO~~|V<br>~~PD~~<br>~~DO~~<br>~~DO GO~~|VGS= 0V, ID= 250µA<br>~~PD~~<br>~~DO~~<br>~~GO~~|
|∆ΒVDSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~DG~~|–––<br>~~GO~~<br>~~DG~~|23<br>~~GO ~~<br>~~DG~~|–––<br> ~~DO~~<br>~~DG~~<br>~~DO~~|mV/°C<br>~~DO~~<br>~~DG~~<br>~~DO GO~~|Reference to 25°C, ID= 1mA<br>~~DO~~<br>~~DG~~<br>~~GO~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~DG~~<br>~~LE~~<br>~~SG~~|–––<br>~~DG~~<br>~~LE~~<br>~~|~~<br>~~SG~~|7.5<br>~~DG~~<br>~~LE~~<br>~~| |~~|10<br>~~DG~~<br>~~DO~~<br>~~LE~~<br>~~|~~|mΩ<br>~~DG~~<br>~~DO GO~~<br>~~LE~~|VGS= 10V, ID= 15A<br>~~DG~~<br>~~GO~~<br>~~LE~~<br>~~@~~|
|||–––<br>~~LE~~<br>~~|~~<br>~~SG~~|9.5<br>~~LE~~<br>~~| |~~|12.5<br>~~LE~~<br>~~|~~||VGS= 4.5V, ID= 12A<br>~~LE~~<br>~~@~~|
|VGS(th)|Gate Threshold Voltage<br>~~LE~~<br>~~SG~~|1.0<br>~~LE~~<br>~~|~~<br>~~SG~~|–––<br>~~LE~~<br>~~| |~~|–––<br>~~LE~~<br>~~|~~|V<br>~~LE~~|VDS= VGS, ID= 250µA<br>~~LE~~<br>~~@~~|
|∆VGS(th)|Gate Threshold Voltage Coefficient<br>~~en~~|–––<br>~~en~~|-5.3<br>~~en~~|–––<br>~~en~~|mV/°C<br>~~en~~||
|IDSS<br>~~Ce~~|Drain-to-Source Leakage Current<br>~~en~~<br>~~EE~~<br>~~Ce~~|–––<br>~~en~~<br>~~EE~~<br>~~|~~|–––<br>~~en~~<br>~~EE~~<br>~~|~~|1.0<br>~~en~~<br>~~EE~~<br>|µA<br>~~en~~<br>~~EE~~|VDS= 24V, VGS= 0V<br>~~EE~~|
|||–––<br>~~EE~~<br>~~|~~|–––<br>~~EE~~<br>~~||~~|150<br>~~EE~~<br>~~|~~||VDS= 24V, VGS= 0V, TJ= 125°C<br>~~EE~~|
|IGSS<br>~~Ce~~|Gate-to-Source Forward Leakage<br>~~EE~~<br>~~Ce~~|–––<br>~~EE~~<br>~~|~~|–––<br>~~EE~~<br>~~||~~<br>~~ce~~|100<br>~~EE~~<br>~~|~~<br>~~ce~~|nA<br>~~EE~~|VGS= 20V<br>~~EE~~|
||Gate-to-Source Reverse Leakage<br>~~Ce~~|–––<br><br>~~a~~<br>~~en~~|–––<br>~~|~~<br>~~a~~<br>~~es~~|-100<br>~~|~~<br>~~a~~<br>~~es~~||VGS= -20V|
|gfs<br>~~Ce~~|Forward Transconductance<br>~~Ce~~<br>~~es~~|46<br><br>~~es~~<br>~~en~~|–––<br>~~|~~<br>~~es~~<br>~~es~~|–––<br>~~|~~<br>~~es~~<br>~~es~~|S<br>~~es~~|VDS= 15V, ID= 12A<br>~~es~~|
|Qg|Total Gate Charge<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~en ~~<br>~~es~~|10<br>~~es~~<br> ~~es ~~<br>~~es~~|14<br>~~es~~<br> ~~es~~<br>~~es~~|nC<br>~~es~~<br>~~GOGO~~|See Fig. 16<br>VGS= 4.5V<br>ID= 12A<br>VDS= 16V<br>~~es~~<br>~~GOGO~~|
|Qgs1|Pre-Vth Gate-to-Source Charge<br>~~es~~|–––<br>~~es~~|2.0<br>~~es~~|–––<br>~~es~~|||
|Qgs2|Post-Vth Gate-to-Source Charge<br>~~ee~~|–––<br>~~ee~~|1.2<br>~~ee~~|–––<br>~~ee~~|||
|Qgd|Gate-to-Drain Charge<br>~~es~~|–––<br>~~es~~|2.5<br>~~es~~|–––<br>~~es~~|||
|Qgodr|Gate Charge Overdrive<br>~~ee~~|–––<br>~~ee~~|4.3<br>~~ee~~|–––<br>~~ee~~|||
|Qsw|Switch Charge (Qgs2+ Qgd)<br>~~es~~<br>~~GO~~|–––<br>~~es~~<br>~~GO~~|3.7<br>~~es~~<br>~~GO~~|–––<br>~~es~~<br>~~GOGO~~|||
|Qoss|Output Charge<br>~~GO~~<br>~~es~~|–––<br>~~GO~~|8.5<br>~~GO~~|–––<br>~~GOGO~~|nC<br>~~GOGO~~|VDS= 16V, VGS= 0V<br>~~GOGO~~<br>@|
|td(on)|Turn-On DelayTime<br>~~GO~~<br>~~es~~|–––<br>~~GO~~|11<br>~~GO ~~|–––<br> ~~GOGO~~|ns<br>~~GOGO~~|Clamped Inductive Load<br>VDD= 15V, VGS= 4.5V<br>ID= 12A<br>~~GOGO~~<br>@|
|tr|Rise Time<br>~~es~~<br>~~ee~~|–––<br>~~ee~~|4.2<br>~~ee~~|–––<br>~~ee~~|||
|td(off)|Turn-Off DelayTime<br>~~es~~|–––<br>~~es~~|10<br>~~es~~|–––<br>~~es~~|||
|tf|Fall Time<br>~~es~~|–––<br>~~es~~<br>~~Ge~~|3.2<br>~~es~~<br>~~es~~|–––<br>~~es~~|||
|Ciss|Input Capacitance<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~es~~<br>~~Ge~~|1030<br>~~es~~<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~es~~|pF|VGS= 0V<br>VDS= 15V<br>ƒ= 1.0MHz|
|Coss|Output Capacitance<br>~~ee~~|–––<br>~~Ge~~<br>~~ee~~|360<br>~~es~~<br>~~ee~~|–––<br>~~ee~~|||
|Crss|Reverse Transfer Capacitance<br>~~es~~|–––<br>~~es~~|120<br>~~es~~|–––<br>~~es~~|||



## **Diode Characteristics** 

||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|IS|Continuous Source Current<br>(Body Diode)|–––|–––|65|A|S<br>D<br>G<br>MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.|
|ISM|Pulsed Source Current<br>(Body Diode)|–––|–––|260|||
|VSD|(Body Diode)<br>Diode Forward Voltage<br>~~ss~~<br>~~**e**e~~|–––<br>~~ss~~<br>~~e~~|–––<br>~~ss~~<br>~~ee~~|1.0<br>~~sO~~<br>~~ee~~|V<br>~~sO~~|TJ= 25°C, IS= 12A, VGS= 0V<br>pn junction diode.<br>~~sO~~<br>~~ee~~|
|trr|Reverse RecoveryTime<br>~~ss~~<br>~~**e**e~~<br>~~e~~|–––<br>~~ss~~<br>~~e~~<br>~~es~~|26<br>~~ss ~~<br>~~ee~~<br>~~Gs~~|38<br> ~~sO~~<br>~~ee~~|ns<br>~~sO~~|TJ= 25°C, IF= 12A, VDD= 15V<br>di/dt = 100A/µs<br>~~sO~~<br>~~ee~~<br>~~@~~|
|Qrr|Reverse RecoveryCharge<br>~~**e**e~~<br>~~e~~|–––<br>~~e~~<br>~~es~~|15<br>~~ee~~<br>~~Gs~~|23<br>~~ee~~|nC||
|ton|Forward Turn-On Time<br>~~**e**e~~<br>~~e ~~<br>~~a~~|Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)<br>~~e ee~~<br>~~ee~~<br> ~~es Gs~~<br>~~@~~|||||



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10000 1000<br>VGS VGS<br>TOP           10V TOP           10V<br>4.5V 4.5V<br>3.7V 3.7V<br>1000 3.5V 3.5V<br>3.3V 3.3V<br>3.0V 3.0V<br>2.7V 100 2.7V<br>100 B OTTOM 2.5V BOTTOM 2.5V<br>10 C A ll Ye<br>10<br>0 | | A 2.5V<br>1 2.5V<br>20µs PULSE WIDTH<br>20µs PULSE WIDTH<br>Tj = 175°C<br>Tj = 25°C<br>0.1 PAA maaiiill 1 ime |<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br> 1000 2.0<br>ID = 65A<br>po P EELE<br>Ee ee es ee es By<br>1.5<br>———— T  = 175      CJ ° PPE EEE ELE pA<br> 100<br>|| peer Py Ty tt Deer yy<br>a > ee ee ee ee 1.0 A<br> 10<br>ft | | | aa<br>SSSSSSS 0.5 CH<br>T  = 25      CJ °<br>V      = 15VDS<br> 1 pF Foote | | 20µs PULSE WIDTH 0.0 EEPEEEEL PPE LP V  EE GS = 10V<br>2.0 4.0 6.0 8.0 10.0<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>V     , Gate-to-Source Voltage (V)GS TJ, Junction Temperature (°C)<br>(Normalized)<br>D<br>I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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10000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = Cgs + Cgd,  Cds SHORTED<br>Crss   = Cgd<br>C = C + C<br>oss   ds  gd<br>1000 T So| Ciss ee<br>C<br>oss<br>100 Crss<br>PEE<br>10<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance Vs.<br>Drain-to-Source Voltage<br> 1000<br> 100<br>T  = 175      CJ °<br> 10<br>T  = 25      CJ °<br> 1<br>V      = 0 V GS<br>0.1<br>0.0 0.5 1.0 1.5 2.0<br>V     ,Source-to-Drain Voltage (V)SD<br>I     , Reverse Drain Current (A)SD<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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6<br>ID= 12A<br>VDS= 24V<br>5 VDS= 16V<br>4 FAS E<br>3<br>2<br>1<br>0 AGE<br>0 2 4 6 8 10 12<br> QG  Total Gate Charge (nC)<br>Fig 6.   Typical Gate Charge Vs.<br>Gate-to-Source Voltage<br>1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100<br>100µsec<br>10<br>1msec<br>1<br>10msec<br>Tc = 25°C<br>Tj = 175°C<br>Single Pulse<br>0.1<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>VGS, Gate-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

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2.5 P TETLLLL LLL LE LE<br>2.0<br>P AE] ET LL Ld Ld<br>SY<br>PLL TN ID = 250µAD = 250µA= 250µA E<br>1.5 P PTTTTTLNEELELNNITTTTTLNEELELNNITTTLNEELELNNITTLNEELELNNINEELELNNIELNNI ELL<br>1.0 P T ~<br>LEEK<br>S EPP<br>yy<br>0.5 See eeeeeeee eeeeeeee<br>-75 -50 -25 0 25 50 75 100 125 150 175 200<br>TJ , Temperature ( °C )<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


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70<br>LIMITED BY PACKAGE<br>Rt} hee Ltt P TETLLLL LLL LE LE<br>60<br>2.0<br>50 PP ar P AE] ET LL Ld Ld<br>PS SY<br>40 poFSCS EEE PLL TN ID = 250µAD = 250µA= 250µA E<br>eefe 1.5 P NI<br>PPP<br>30<br>A TT PATeT<br>es PTTTTTLNEELELNNITTTTTLNEELELNNITTTLNEELELNNITTLNEELELNNINEELELNNIELNNI ELL<br>FEE ~<br>20 EEE EEE ENS 1.0 P T<br>FEE LEEK<br>EEE S EPP<br>10<br>REESE yy<br>HCE EEEEEEEEE 0.5 See eeeeeeee eeeeeeee<br>0<br>25 50 75 100 125 150 175 -75 -50 -25 0 25 50 75 100 125 150 175<br>T   , Case TemperatureC (  C)° TJ , Temperature ( °C )<br>Fig 9.   Maximum Drain Current Vs. Fig 10.   Threshold Voltage Vs. Temperature<br>Case Temperature<br> 10<br>a a ee ee ee Oe Oe 0 sO OO OO<br>a a a ee ee ee ee ee ee<br>a a<br> 1 D = 0.50<br>0.20<br>P ee<br>0.10<br>ee 0.05 ee ee ee P DM<br>0.1 0.02 SINGLE PULSE<br>0.01 (THERMAL RESPONSE) t 1<br>ee d<br>t 2<br>a a e e<br>rT [ET] TTee eee 1. Duty factor D =Notes: t   / t1 2<br>ll 2. Peak T J = P DM x  Z thJC + T C<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJC<br>(Z          )<br>Thermal Response<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>20VVGS<br>oT tp 0.01Ω<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

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V(BR)DSS<br>— tp<br>/ ‘y<br>/ |<br>IAS<br>**----- End of picture text -----**<br>


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1000<br>ID<br>Pt<br>TOP 4.9A<br>8.5A<br>wae<br>800 NER BOTTOM 12A<br>V ey<br>600 | tt<br>CN<br>400<br>aNe ee eee<br>UENSS<br>200<br>SNE<br>PSESESC<br>P| |ES<br>0<br>25 50 75 100 125 150 175<br>Starting Tj, Junction Temperature (   C)°<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

**Fig 12b.** Unclamped Inductive Waveforms 

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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>.3µF<br>=< ac +<br>D.U.T. -VDS<br>VGS<br>3mA<br>6 & |<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 13.** Gate Charge Test Circuit 

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-<br>≤ 1<br>≤ 0.1 %<br>Fig 14a.   Switching Time Test Circuit<br>)+ Ves<br>VDS<br>90%<br>10% /\_<br>———<br>VGS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 14b.** Switching Time Waveforms 

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Driver Gate Drive<br>P.W.<br>D.U.T + {+ P.W. Period ——— + D = —— Period<br>) [©)]    • Circuit Layout Considerations | t V | GS=10V<br> •<br>| =] - LowGround StrayPla I n eductance<br> •   Low Leakage Inductance 2) D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oi - [l] Current Transformer - ® + Current r Current di/dt NN<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘<br>00 + VDD<br>ma<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( A •   dvidt controlled by Re Vpp - Inductor Curent<br>•   D.U.T. - Device Under Test es ee<br>Isp controlled by Duty Factor "D" ® Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


**Fig 15.** Peak Diode Recovery dv/dt Test Circuit or N-Channel HEXFET ® Power MOSFETs 

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Id<br>Vds f1<br>1 Vgs<br>1<br>1<br>1<br>1<br>1<br>1<br>1<br>! I<br>Vgs(th) ' \<br>H |<br>! 1<br>! I<br>—<br>io/| ' \<br>1 H 1 ' 1<br><> _ret__|<-> IAT ><br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 16.** Gate Charge Waveform 

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## **Power MOSFET Selection for Non-Isolated DC/DC Converters** 

## **Control FET** 

## **Synchronous FET** 

The power loss equation for Q2 is approximated by; 

_P = P + P + P + P loss conduction switching drive output_ 

This can be expanded and approximated by; 

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*dissipated primarily in Q1. 

For the synchronous MOSFET Q2, Rds(on) is an important characteristic; however, once again the importance of gate charge must not be overlooked since it impacts three critical areas. Under light load the MOSFET must still be turned on and off by the control IC so the gate drive losses become much more significant.  Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that are transfered to Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs’ susceptibility to Cdv/dt turn on. 

The drain of Q2 is connected to the switching node of the converter and therefore sees transitions between ground and Vin. As Q1 turns on and off there is a rate of change of drain voltage dV/dt which is capacitively coupled to the gate of  Q2 and can induce a voltage spike on the gate that is sufficient to turn the MOSFET on, resulting in shoot-through current . The ratio of Q /Q must be minimized to reduce the gd gs1 potential for Cdv/dt turn on. 

Figure A:  Qoss Characteristic 

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EXAMPLE: THIS IS AN IRFR120<br>PART NUMBER<br>WITH ASSEMBLY<br>INTERNATIONAL gS<br>LOT CODE 1234 RECTIFIER IRFR120 DATE CODE<br>ASSEMBLED ON WW 16, 2001 LOGO 116A YEAR 1 =  2001<br>IN THE ASSEMBLY LINE "A" 12 34 WEEK 16<br>LINE A<br>Note: "P" in assembly line position ASSEMBLY yu<br>indicates "Lead-Free" LOT CODE<br>**----- End of picture text -----**<br>


## OR 

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PART NUMBER<br>INTERNATIONAL cS<br>RECTIFIER IRFR120 DATE CODE<br>LOGO TeaR Pii6A P =  DESIGNATES LEAD-FREE<br>12 34 PRODUCT (OPTIONAL)<br>YEAR 1 =  2001<br>ASSEMBLY oY WEEK 16<br>LOT CODE<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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EXAMPLE: THIS IS AN IRFU120 PART NUMBER<br>WITH ASSEMBLYLOT CODE 5678 INTERNATIONALRECTIFIER cS IRFU120 DATE CODE<br>ASSEMBLED ON WW 19, 2001 LOGO 56 119A78 YEAR 1 =  2001WEEK 19<br>IN THE ASSEMBLY LINE "A" |<br>LINE A<br>ASSEMBLY<br>LOT CODE<br>Note: "P" in assembly line position<br>indicates Lead-Free"<br>OR<br>PART NUMBER<br>INTERNATIONAL CN<br>RECTIFIER IRFU120 DATE CODE<br>LOGO TOR P1194 P =  DESIGNATES LEAD-FREE<br>56 78 PRODUCT (OPTIONAL)<br>YEAR 1 =  2001<br>ASSEMBLY<br>LOT CODE WEEK 19<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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TR TRR TRL<br>eeooo¢oo\ | oeoo/4<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>CeCe, 5)<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>NOTES :<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).<br>3.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>|   13 INCH<br>16 mm<br>|X a<br>**----- End of picture text -----**<br>


NOTES : 1. OUTLINE CONFORMS TO EIA-481. 

o) Repetitive rating;  pulse width limited by @ Calculated continuous current based on maximum allowable max. junction temperature. junction temperature. Package limitation current is 30A. @© Starting TJ = 25°C, L = 3.2mH When mounted on 1" square PCB (FR-4 or G-10 Material). RG = 25Ω, IAS = 12A. For recommended footprint and soldering techniques refer to ® Pulse width ≤ 400µs; duty cycle ≤ 2%. application note #AN-994. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 10/2006 

www.irf.com 

11 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



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- [View this product on Novapart](https://novapart.co/products/IRLR7821TRPBF/power-mosfet-n-channel-30-v-65-a-00075-ohm-to)
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- [Supplier page](https://es.farnell.com/en-ES/infineon/irlr7821trpbf/mosfet-n-ch-30v-65a-to-252aa/dp/2726022)
---

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