# Power MOSFET, N Channel, 30 V, 40 A, 0.0138 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:1013419/)

**URL**: https://novapart.co/products/IRLR7807ZPBF/power-mosfet-n-channel-30-v-40-a-00138-ohm-to-252
**SKU**: IRLR7807ZPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4250
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 40W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 40W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.0138ohm |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 40A |
| Drain Source On State Resistance | 0.0138ohm |
| Gate Source Threshold Voltage Max | 1.8V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1013419/)

## PD -98777A IRLR7807ZPbF IRLU7807ZPbF 

## **Applications** 

High Frequency Synchronous Buck Converters for Computer Processor Power Lead-Free 

HEXFET ® Power MOSFET 

|**VDSS**|**RDS(on) max Q**|**max Qg (typ.)**|
|---|---|---|
|**30V**|**13.8m**|**7.0nC**|



## **Benefits** 

Very Low RDS(on) at 4.5V VGS 

> | Ultra-Low Gate Impedance 

> ° Fully Characterized Avalanche Voltage and Current 

D-Pak I-Pak IRLR7807Z IRLU7807Z 

## **Absolute Maximum Ratings** 

||**Parameter**<br>~~oh~~|**Max.**<br>~~oh~~|**Units**|
|---|---|---|---|
|VDS|Drain-to-Source Voltage<br>~~a~~<br>~~tT~~<br>~~oh~~|30<br>~~a~~<br>~~HpjNVVrwAT7—11]_~~<br>~~oh~~|V<br>~~ie~~|
|VGS<br>~~———~~|Gate-to-Source Voltage<br>~~tT~~<br>~~oh~~<br>~~———~~|± 20<br>~~HpjNVVrwAT7—11]_~~<br>~~oh~~<br>~~ie~~||
|ID@ TC= 25°C<br>~~———~~|Continuous Drain Current, VGS@ 10V<br>~~tT ~~<br>~~oh~~<br>~~———~~|43<br> ~~HpjNVVrwAT7—11]_~~<br>~~oh~~<br>~~ie~~|A<br>~~ie~~|
|ID@ TC= 100°C<br>~~———~~<br>~~TO~~|Continuous Drain Current, VGS@ 10V<br>~~oh~~<br>~~———~~<br>~~TOtWNWNNNW"NWws~~|30<br>~~oh~~<br>~~ie~~<br>~~WY’...~~||
|IDM<br>~~———~~<br>~~TO~~|Pulsed Drain Current<br>~~———~~<br>~~TOtWNWNNNW"NWws~~|170<br>~~ie~~<br>~~WY’...~~||
|PD@TC= 25°C<br>~~———~~<br>~~TO~~|Maximum Power Dissipation<br>~~———~~<br>~~TO tWNWNNNW"NWws ~~<br>~~Oe~~<br>~~ee~~|40<br>~~ie~~<br> ~~WY’...~~<br>~~Oe~~<br>~~ee~~|W<br>~~ie~~<br>~~ee~~|
|PD@TC= 100°C|Maximum Power Dissipation<br>~~ee~~|20<br>~~ee~~||
|~~po~~|Linear Derating Factor<br>~~ee~~<br>~~ee eee~~<br>~~po~~|0.27<br>~~ee~~<br>~~eee~~<br>~~po~~|W/°C<br>~~ee~~<br>~~eee~~<br>~~po~~|
|TJ<br>TSTG<br>~~po~~|Operating Junction and<br>Storage Temperature Range<br>~~ee eee~~<br>~~po~~|-55  to + 175<br>~~eee~~<br>~~po~~|°C<br>~~eee~~<br>~~po~~|
|~~po~~|Soldering Temperature, for 10 seconds<br>~~ee eee~~<br>~~po~~|300 (1.6mm from case)<br>~~eee~~<br>~~po~~||



Notes hrough are on page 11 

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**Static @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**<br>~~ee~~|**Typ.**<br>~~Gs~~|**Max. **<br>~~en~~|**Units**<br>~~Gd~~|**Conditions**|
|---|---|---|---|---|---|---|
|BVDSS|Drain-to-Source Breakdown Voltage<br>~~es~~|30<br>~~es~~<br>~~ee~~<br>~~Gs~~|–––<br>~~es~~<br>~~Gs~~<br>~~Gs~~|–––<br>~~es~~<br>~~en~~<br>~~sd~~|V<br>~~es~~<br>~~Gd~~<br>~~sd~~|VGS= 0V, ID= 250µA<br>~~es~~|
|∆ΒVDSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~es~~<br>~~ee~~|–––<br>~~es~~<br>~~ee ~~<br>~~ee~~<br>~~Gs~~|23<br>~~es~~<br> ~~Gs ~~<br>~~ee~~<br>~~Gs~~|–––<br>~~es~~<br> ~~en ~~<br>~~ee~~<br>~~sd~~|mV/°C<br>~~es~~<br> ~~Gd~~<br>~~ee~~<br>~~sd~~|Reference to 25°C, ID= 1mA<br>~~es~~<br>~~ee~~|
|RDS(on)<br>~~Sn~~|Static Drain-to-Source On-Resistance<br>~~Re~~<br>~~Sn~~|–––<br>~~Gs ~~<br>~~Re~~<br>~~|~~|11<br> ~~Gs ~~<br>~~EE~~<br>~~| |~~|13.8<br> ~~sd~~<br>~~EE~~<br>~~|~~|mΩ<br>~~sd~~<br>~~EE~~<br>~~ee~~|VGS= 10V, ID= 15A<br>~~©~~|
|||–––<br>~~Re ~~<br>~~|~~|14.5<br> ~~EE~~<br>~~| |~~|18.2<br>~~EE~~<br>~~|~~<br>~~el~~||VGS= 4.5V, ID= 12A<br>~~©~~|
|VGS(th)<br>~~Sn~~|Gate Threshold Voltage<br>~~Sn~~|1.35<br>~~|~~<br>~~ee~~|1.8<br>~~| |~~<br>~~es~~|2.25<br>~~|~~<br>~~el~~|V<br>~~ee~~|VDS= VGS, ID= 250µA<br>~~©~~|
|∆VGS(th)/∆TJ<br>~~Sn~~|Gate Threshold Voltage Coefficient<br>~~Sn~~<br>~~ee~~|–––<br>~~|~~<br>~~ee~~<br>~~ee~~|-4.5<br>~~| |~~<br>~~ee~~<br>~~es~~|–––<br>~~|~~<br>~~el~~<br>~~ee~~|mV/°C<br>~~ee~~<br>~~ee~~||
|IDSS<br>~~Sn~~|Drain-to-Source Leakage Current<br>~~Sn~~<br>~~EE~~|–––<br>~~|~~<br>~~ee ~~<br>~~EE~~<br>~~**|**~~|–––<br>~~| |~~<br> ~~es~~<br>~~EE~~<br>~~**|**~~|1.0<br>~~|~~<br>~~el ~~<br>~~EE~~|µA<br> ~~ee~~<br>~~EE~~|VDS= 24V, VGS= 0V<br>~~©~~<br>~~EE~~|
|||–––<br>~~EE~~<br>~~**|**~~|–––<br>~~EE~~<br>~~**|**~~|150<br>~~EE~~||VDS= 24V, VGS= 0V, TJ= 125°C<br>~~EE~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~oe]~~<br>~~**|**~~|–––<br>~~**|**~~<br>~~oe]~~<br>~~**|**~~|–––<br>~~**|**~~<br>~~oe]~~|100<br>~~oe]~~|nA<br>~~oe]~~|VGS= 20V<br>~~oe]~~|
||Gate-to-Source Reverse Leakage<br>~~oe]~~<br>~~**|**~~|–––<br>~~oe]~~<br>~~**|**~~|–––<br>~~oe]~~<br>~~|~~|-100<br>~~oe]~~<br>~~|~~<br>~~Pd~~||VGS= -20V<br>~~oe]~~|
|gfs|Forward Transconductance<br>~~**|**~~<br>~~Gn~~|51<br>~~**|**~~<br>~~Gn~~<br>~~ee~~|–––<br>~~Gn~~<br>~~ee~~|–––<br>~~Gn~~<br>~~Pd~~|S<br>~~Gn~~|VDS= 15V, ID= 12A<br>~~Gn~~|
|Qg|Total Gate Charge<br>~~es~~|–––<br>~~es~~<br>~~ee~~<br>~~ee~~|7.0<br>~~es~~<br>~~ee~~<br>~~es~~|11<br>~~Pd~~<br>~~es~~|nC<br>~~sd~~|See Fig. 16<br>VDS= 15V<br>VGS= 4.5V<br>ID= 12A|
|Qgs1|Pre-Vth Gate-to-Source Charge<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|1.8<br> ~~ee~~<br>~~ee~~<br>~~es~~<br>~~ee~~|–––<br>~~ee~~|||
|Qgs2|Post-Vth Gate-to-Source Charge<br>~~es~~|–––<br>~~ee ~~<br>~~es~~<br>~~ee~~<br>~~ee~~|0.7<br> ~~es~~<br>~~es~~<br>~~ee~~<br>~~es~~|–––<br>~~es~~|||
|Qgd|Gate-to-Drain Charge<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|2.7<br> ~~ee~~<br>~~ee~~<br>~~es~~<br>~~ee~~|–––<br>~~ee~~|||
|Qgodr|Gate Charge Overdrive<br>~~es~~|–––<br>~~ee ~~<br>~~es~~<br>~~ee~~<br>~~ee~~|1.8<br> ~~es~~<br>~~es~~<br>~~ee~~<br>~~es~~|–––<br>~~es~~|||
|Qsw|Switch Charge (Qgs2+ Qgd)<br>~~ee~~<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~Ge~~<br>|3.4<br> ~~ee~~<br>~~ee~~<br>~~es~~<br>~~**es**~~|–––<br>~~ee~~<br>~~sd~~|||
|Qoss|Output Charge<br>~~es~~<br>~~ee~~|–––<br>~~ee ~~<br>~~es~~<br>~~Ge~~<br>~~ee~~|4.0<br> ~~es~~<br>~~es~~<br>~~**es**~~|–––<br>~~es~~<br>~~sd~~|nC<br>~~es~~<br>~~sd~~|VDS= 15V, VGS= 0V<br>~~es~~<br>@|
|td(on)|Turn-On DelayTime<br>~~ee~~|–––<br>~~Ge~~<br>~~ee~~<br>~~ee~~|7.1<br>~~**es**~~<br>~~ee~~|–––<br>~~sd~~|ns<br>~~sd~~|ID= 12A<br>VDD= 15V, VGS= 4.5V<br>Clamped Inductive Load<br>@|
|tr|Rise Time<br>~~ee ~~<br>~~es~~|–––<br>~~Ge ~~<br> ~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|28<br> ~~**es** ~~<br>~~es~~<br>~~ee~~<br>~~es~~|–––<br> ~~sd~~<br>~~es~~|||
|td(off)|Turn-Off DelayTime<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|9.8<br> ~~ee~~<br>~~ee~~<br>~~es~~<br>~~es~~|–––<br>~~ee~~|||
|tf|Fall Time<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|3.5<br> ~~es~~<br>~~ee~~<br>~~es~~<br>~~es~~|–––<br>~~ee~~|||
|Ciss|Input Capacitance<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|780<br>~~ee~~<br> ~~es~~<br>~~ee~~<br>~~es~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|pF|ƒ= 1.0MHz<br>VGS= 0V<br>VDS= 15V|
|Coss|Output Capacitance<br>~~es~~|–––<br>~~ee ~~<br>~~es~~<br>~~ee~~<br>~~ee~~|180<br> ~~es~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|||
|Crss|Reverse Transfer Capacitance<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~|100<br> ~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|||



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1000 1000<br>100 yeeFSeee sov EEE EHHLo<br>100<br>10<br>any See ff aN<br>OO Sao<br>1 = ees 10 |<br>tt<br>0.1<br>ll Zee |<br>2.5V<br>eePf | ee 2.5V eee 1 SP SS|Ss| | a eee<br>0.01<br>ee eo p e EEA<br>OO — | ye 20µs PULSE WIDTH yy 20µs PULSE WIDTH<br>0.001 LlnloTTTpTT el Tj = 25°C fotPEELEty 0.1 e o llT P} Tj = 175°C Baal<br>0.1 1 10 0.1 1 10<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>1000.0 2.0<br>ID = 30A<br>Ee es ee es es es VGS = 10V<br>T = 25°C<br>J<br>100.0 e e — ae<br>Se es ee ee TJ = 175°C 1.5 A<br>10.0 |aee vy7 A| ee| ee| ee| ee| waBeq<br>> 2 es ee es ee es ee a<br>1.0<br>1.0<br>oe ee TTL EL<br>i i eee eee VDS = 10V _<br>20µs PULSE WIDTH<br>0.1 0.5<br>2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)<br>)(Α<br>ID, Drain-to-Source Current<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance vs. Temperature 

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10000 12<br>VCGS  iss     = C = 0V,       f = 1 MHZgs  + Cgd,   C ds     SHORTED ID= 12A VDS= 24V<br>Crss    = C gd  10 VDS= 15V<br>Coss   = C ds + Cgd<br>1000 8<br>Ciss<br>6<br>Coss<br>100 Crss 4<br>2<br>10 tre eri 0 (id<br>1 10 100 0 4 8 12 16<br>VDS, Drain-to-Source Voltage (V)  QG  Total Gate Charge (nC)<br>Fig 5.   Typical Capacitance vs. Fig 6.   Typical Gate Charge vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>1000.0 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100.0 100<br>T = 175°C<br>J<br>10.0 10 100µsec<br>1msec<br>1.0 1<br>T = 25°C<br>J  Tc = 25°C<br>VGS = 0V Tj = 175°C 10msec<br>Se Single Pulse<br>0.1 0.1<br>0.0 0.5 1.0 1.5 2.0 0.1 1.0 10.0 100.0 1000.0<br>VSD, Source-toDrain Voltage (V) VDS  , Drain-toSource Voltage (V)<br>ISD, Reverse Drain Current (A)<br>VGS, Gate-to-Source Voltage (V)<br>C, Capacitance (pF)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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50 2.5<br>LIMITED BY PACKAGE<br>40<br>2.0<br>30<br>ID = 250µA<br>PP A UT<br>20<br>eT TING 1.5 H PL<br>\ BN<br>10<br>0 1.0<br>25 50 75 100 125 150 175 -75 -50 -25 0 25 50 75 100 125 150 175<br> TC , Case Temperature (°C) TJ , Temperature ( °C )<br>Fig 9.   Maximum Drain Current vs. Fig 10.   Threshold Voltage vs. Temperature<br>Case Temperature<br>10<br>D = 0.50<br>1<br>0.20<br>0.10<br>0.05<br>0.1 0.02 R1 R1 R2 R2 R3R3 Ri (°C/W)    τi (sec)<br>0.01 τJ τJ τCτ 1.796       0.000267<br>e tt τ1τ1 τ2 τ2 τ3τ3 1.112       0.000607<br>a FP — |<br>0.01 SINGLE PULSE Ci= Ciτi/Rii/Ri 0.842       0.004249<br>( THERMAL RESPONSE ) Notes:<br>1. Duty Factor D = t1/t2<br>ee e 2. Peak Tj = P dm x Zthjc + Tc I<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>ID , Drain Current (A)<br>VGS(th) Gate threshold Voltage (V)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS A<br>20VVGS<br>tp 0.01Ω<br>Fig 12a.   Unclamped Inductive Test Circuit |<br>**----- End of picture text -----**<br>


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V(BR)DSS<br>tp<br>—<br>/<br>y |<br>/y Ih<br>IAS 7<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>.3µF<br>THeLL |i D.U.T. | +-VDS<br>VGS<br>3mA<br>oe<br>IG ID |<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 13.** Gate Charge Test Circuit 

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120<br>100<br>N iee<br>80<br>60<br>40<br>NNSe<br>20 SNe<br>|SS<br>0<br>25 50 75 100 125 150 175<br>Starting TJ, Junction Temperature (°C)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

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LD<br>VDS<br>ie<br>+<br>VDD -<br>(ee<br>D.U.T<br>VGS<br>Pulse Width < 1µs<br>Duty Factor < 0.1%<br>Fig 14a.   Switching Time Test Circuit<br>oO ,<br>V<br>DS<br>90%<br>10%<br>V<br>GS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 14b.** Switching Time Waveforms 

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Driver Gate Drive<br>P.W.<br>D.U.T + {+ P.W. Period ——— + D = —— Period<br>) [©)]    • Circuit Layout Considerations | t V | GS=10V<br> •<br>| =] - LowGround StrayPla I n eductance<br>•   Low Leakage Inductance 2) D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oi - [l] Current Transformer - ® + Current r Current di/dt NN<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘<br>00 +> VDD<br>ma<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( A •   dvidt controlled by Re Vpp - Inductor Curent<br>•   D.U.T. - Device Under Test es ee<br>Isp controlled by Duty Factor "D" ® Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


**Fig 15.** Peak Diode Recovery dv/dt Test Circuit or N-Channel HEXFET ® Power MOSFETs 

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Id<br>Vds f'<br>1 Vgs<br>I<br>1<br>1<br>1<br>1<br>I<br>1<br>|<br>H \<br>Vgs(th) !! \\<br>! \<br>! \<br>H \<br>H \<br>1 H ! ' |<br>><1) o t<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 16.** Gate Charge Waveform 

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## **Power MOSFET Selection for Non-Isolated DC/DC Converters** 

## **Control FET** 

## **Synchronous FET** 

The power loss equation for Q2 is approximated by; 

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This can be expanded and approximated by; 

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*dissipated primarily in Q1. 

For the synchronous MOSFET Q2, Rds(on) is an important characteristic; however, once again the importance of gate charge must not be overlooked since it impacts three critical areas. Under light load the MOSFET must still be turned on and off by the control IC so the gate drive losses become much more significant.  Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that are transfered to Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs’ susceptibility to Cdv/dt turn on. 

The drain of Q2 is connected to the switching node of the converter and therefore sees transitions between ground and Vin. As Q1 turns on and off there is a rate of change of drain voltage dV/dt which is capacitively coupled to the gate of  Q2 and can induce a voltage spike on the gate that is sufficient to turn the MOSFET on, resulting in shoot-through current . The ratio of Q /Q must be minimized to reduce the gd gs1 potential for Cdv/dt turn on. 

Figure A:  Qoss Characteristic 

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TR TRR TRL<br>eeooooo\ | oeoo/J<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>CECE, OO) ,<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>NOTES :<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).<br>3.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>|   13 INCH<br>16 mm<br>mN =<br>**----- End of picture text -----**<br>


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Repetitive rating;  pulse width limited by max. junction temperature. @ Starting TJ = 25°C, L = 0.39mH, RG = 25Ω, IAS = 12A. 

Pulse width ≤ 400µs; duty cycle ≤ 2%. 

@ Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 30A. © When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 12/04 

www.irf.com 

11 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



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- [Supplier page](https://es.farnell.com/en-ES/infineon/irlr7807zpbf/mosfet-n-logic-d-pak/dp/1013419)
---

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