# Power MOSFET, N Channel, 20 V, 100 A, 4000 µohm, TO-252AA, Surface Mount

![Product image](https://novapart.co/image/farnell:2726021/)

**URL**: https://novapart.co/products/IRLR6225TRPBF/power-mosfet-n-channel-20-v-100-a-4000-ohm-to
**SKU**: IRLR6225TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2940
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.0032ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:800m

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 63W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | TO-252AA |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 100A |
| Drain Source On State Resistance | 4000µohm |
| Gate Source Threshold Voltage Max | 800mV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2726021/)

## IRLR6225PbF 

## HEXFET ® Power MOSFET 

||||||||HEXFET|HEXFET|HEXFET|HEXFET<br>Power MOSFET<br>®|
|---|---|---|---|---|---|---|---|---|---|---|
|**VDS**|**20**|**V**|||||||||
|**RDS(on) max**<br>(@VGS= 4.5V)<br>**RDS(on) max**<br>(@VGS= 2.5V)|**4.0**<br>**5.2**<br>~~|~~<br>~~|~~|**m**Ω<br>**m**Ω||G|||D|||S<br>i<br>G|
|**Qg (typical)**<br>**RG (typical)**|**48**<br>**nC**<br>**2.2**<br>Ω<br>~~FT~~<br>~~ee ee~~||||||S|||D-Pak<br>IRLR6225PbF|
|**ID **|**42**|**A**|||||**G**|||**D**<br>**S**|
|**Applications**|||||||Gate|||Drain<br>Source|



## **Applications** 

- Battery Protection Switch 

## **Features and Benefits** 

|**Features and Benefits**|||
|---|---|---|
|**Features**||**Benefits**|
|Industry-Standard Pinout||Multi-Vendor Compatibility|
|Compatible with Existing Surface Mount Techniques|results in|Easier Manufacturing|
|RoHS Compliant Containingno Lead,no Bromide and no Halogen|⇒|EnvironmentallyFriendlier|
|MSL1,IndustrialQualification||Increased Reliability|



|**Orderable part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Note**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|IRLR6225PbF|D-PAK|Tube/Bulk|**Quantity**<br>75||
|IRLR6225TRPbF|D-PAK|Tape and Reel|2000||



## **Absolute Maximum Ratings** 

|**Absolute Maximum Ratings**|**Absolute Maximum Ratingsgss**|||
|---|---|---|---|
||**Parameter**|**Max.**|**Units**|
|VDS<br>~~se~~|Drain-to-Source Voltage<br>~~se~~|20<br>~~se~~|V<br>~~se~~|
|VGS<br>~~se~~|Gate-to-Source Voltage<br>~~se~~|±12<br>~~se~~||
|ID@ TC= 25°C<br>~~aee~~|Continuous Drain Current, VGS@ 10V<br>~~aee~~|100<br>~~ee~~|A<br>~~ee~~|
|ID@ TC= 100°C<br>~~aee~~|Continuous Drain Current, VGS@ 10V<br>~~aee~~|63<br>~~ee~~||
|IDM<br>~~aee~~<br>~~a~~|Pulsed Drain Current<br>~~aee~~<br>~~a a~~|400<br>~~ee~~||
|PD@TC= 25°C<br>~~a~~<br>~~ee~~|Power Dissipation<br>~~a a~~<br>~~ee~~|63<br>~~ee~~|W<br>~~ee~~|
|PD@ TC= 100°C<br>~~a~~<br>~~ee~~|Power Dissipation<br>~~a a~~<br>~~ee~~|25<br>~~ee~~||
|~~ee~~<br>~~a~~|Linear DeratingFactor<br>~~ee~~<br>~~a~~|0.5<br>~~ee~~|W/°C<br>~~ee~~|
|TJ<br>TSTG<br>~~a~~<br>~~a~~|Operating Junction and<br>Storage Temperature Range<br>~~a~~<br>~~a~~|-55  to + 150|°C|
|~~a~~|SolderingTemperature,for 10 seconds<br>~~a~~|300(1.6mm from case)||



Notes 0) through  are on page 8 © 

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## ����������� 

**Static @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**|**Typ.**|**Max.**|**Units**|**Conditions**|**Conditions**|
|---|---|---|---|---|---|---|---|
|BVDSS|Drain-to-Source Breakdown Voltage|20|–––|–––|V|VGS= 0V, ID= 250µA||
|∆ΒVDSS/∆TJ|Breakdown Voltage Temp. Coefficient|–––|6.6|–––|mV/°C|Reference to 25°C, ID= 1mA||
|RDS(on)|Static Drain-to-Source On-Resistance|–––|3.2|4.0|mΩ|VGS= 4.5V, ID= 21A�||
|||–––|4.2|5.2||VGS= 2.5V, ID= 17A�||
|VGS(th)|Gate Threshold Voltage|0.5|0.8|1.1|V|VDS= VGS, ID= 50µA||
|∆VGS(th)|Gate Threshold Voltage Coefficient|–––|-4.0|–––|mV/°C|||
|IDSS|Drain-to-Source Leakage Current|–––|–––|1.0|µA|VDS= 16V, VGS= 0V||
|||–––|–––|150||VDS= 16V, VGS= 0V, TJ= 125°C||
|IGSS|Gate-to-Source Forward Leakage|–––|–––|100|nA|VGS= 12V||
||Gate-to-Source Reverse Leakage|–––|–––|-100||VGS= -12V||
|gfs|Forward Transconductance|205|–––|–––|S|VDS= 10V, ID= 21A||
|Qg|Total Gate Charge|–––|48|72|nC|See Fig.17 & 18<br>VGS= 4.5V<br>ID= 17A<br>VDS= 10V||
|Qgs1|Pre-Vth Gate-to-Source Charge|–––|2.6|–––||||
|Qgs2|Post-Vth Gate-to-Source Charge|–––|3.6|–––||||
|Qgd|Gate-to-Drain Charge|–––|19|–––||||
|Qgodr|Gate Charge Overdrive|–––|23|–––||||
|Qsw|Switch Charge(Qgs2+ Qgd)|–––|23|–––||||
|Qoss|Output Charge|–––|21|–––|nC|VDS= 16V, VGS= 0V||
|RG|Gate Resistance|–––|2.2|–––|Ω|||
|td(on)|Turn-On DelayTime|–––|9.7|–––|ns|RG=1.8Ω<br>VDD= 10V, VGS= 4.5V<br>ID= 17A<br>See Fig.15||
|tr|Rise Time|–––|37|–––||||
|td(off)|Turn-Off DelayTime|–––|63|–––||||
|tf|Fall Time|–––|52|–––||||
|Ciss|Input Capacitance|–––|3770|–––|pF|VGS= 0V<br>VDS= 10V<br>ƒ= 1.0MHz||
|Coss|Output Capacitance|–––|915|–––||||
|Crss|Reverse Transfer Capacitance|–––|650|–––||||
|**Avalanche Characteristics**||||||||
||**Parameter**||**Typ.**|||**Max.**|**Units**|
|EAS|Single Pulse Avalanche Energy�||–––|||170|mJ|
|IAR|Avalanche Current�||–––|||17|A|
|EAR|Repetitive Avalanche Energy�||–––|||6.3|mJ|
|**Diode Characteristics**||||||||
||**Parameter**|**Min.**|**Typ.**|**Max.**|**Units**|**Conditions**||
|IS|Continuous Source Current<br>(BodyDiode) �|–––|–––|100�|A|D<br>S<br>G<br>showing  the<br>integral reverse<br>p-njunction diode.<br>MOSFET symbol||
|ISM|Pulsed Source Current<br>(BodyDiode)��|–––|–––|400||||
|VSD|Diode Forward Voltage|–––|–––|1.2|V|TJ= 25°C, IS= 17A, VGS= 0V�||
|trr|Reverse RecoveryTime|–––|35|53|ns|TJ= 25°C, IF= 17A, VDD= 10V<br>di/dt = 200A/µs��||
|Qrr|Reverse RecoveryCharge|–––|57|86|nC|||
|ton|Forward Turn-On Time|Time is dominated by parasitic Inductance||||||



## **Thermal Resistance** 

||**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RθJC|Junction-to-Case�|–––|2.0|°C/W|
|RθJA|Junction-to-Ambient (PCB Mount)�|–––|50||
|RθJA|Junction-to-Ambient�|–––|110||



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## ����������� 

**==> picture [210 x 200] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>VGS<br>TOP           10V<br>4.5V<br>3.5V<br>3.0V<br>2.3V<br>2.0V<br>1.8V<br>BOTTOM 1.5V<br>100<br>1.5V<br>≤ 60µs PULSE WIDTH<br>Tj = 25°C<br>10<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical Output Characteristics 

**==> picture [207 x 205] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>100<br>TJ = 150°C<br>10<br>T = 25°C<br>J<br>1<br>VDS = 10V<br>≤ 60µs PULSE WIDTH<br>0.1<br>0.0 1.0 2.0 3.0 4.0 5.0<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**==> picture [216 x 203] intentionally omitted <==**

**----- Start of picture text -----**<br>
100000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = C gs + Cgd,  C ds SHORTED<br>C  = C<br>rss   gd<br>Coss   = Cds + Cgd<br>10000<br>C<br>iss<br>Coss<br>1000 Crss<br>100<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance vs.Drain-to-Source Voltage 

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**----- Start of picture text -----**<br>
1000<br>VGS<br>TOP           10V<br>4.5V<br>3.5V<br>3.0V<br>2.3V<br>2.0V<br>100 1.8V<br>BOTTOM 1.5V<br>1.5V<br>10<br>≤ 60µs PULSE WIDTH<br>Tj = 150°C<br>1<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>1.6<br>I = 42A<br>D<br>VGS = 4.5V<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>Fig 4.   Normalized On-Resistance vs. Temperature<br>14.0<br>I = 17A<br>D<br>12.0<br>VDS= 16V<br>10.0 VDS= 10V<br>VDS= 4.0V<br>8.0<br>6.0<br>4.0<br>2.0<br>0.0<br>0 25 50 75 100 125<br> QG,  Total Gate Charge (nC)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance vs. Temperature 

**Fig 6.** Typical Gate Charge vs.Gate-to-Source Voltage 

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## ����������� 

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**----- Start of picture text -----**<br>
1000<br>100 TJ = 150°C<br>10<br>T = 25°C<br>J<br>1<br>VGS = 0V<br>0.1<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**==> picture [211 x 201] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>Limited By Package<br>80<br>60<br>40<br>20<br>0<br>25 50 75 100 125 150<br> TC , Case Temperature (°C)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 9.** Maximum Drain Current vs. Case (Bottom) Temperature 

**==> picture [210 x 201] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100<br>100µsec<br>Limited by<br>Package<br>10 10msec 1msec<br>Tc = 25°C<br>Tj = 150°C<br>Single Pulse DC<br>1<br>0 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

**==> picture [209 x 203] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.1<br>1.0<br>0.9<br>0.8<br>0.7 ID = 50µA<br>0.6<br>0.5<br>0.4<br>0.3<br>0.2<br>-75 -50 -25 0 25 50 75 100 125 150<br>TJ , Temperature ( °C )<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 10.** Threshold Voltage vs. Temperature 

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**----- Start of picture text -----**<br>
10<br>1 D = 0.50<br>0.20<br>0.10<br>0.1 0.05<br>0.02<br>0.01<br>0.01<br>SINGLE PULSE Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC ) °C/W<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom) 

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## ����������� 

**==> picture [217 x 207] intentionally omitted <==**

**----- Start of picture text -----**<br>
8<br>I = 17A<br>D<br>7<br>6<br>5<br>T = 125°C<br>J<br>4<br>3<br>T = 25°C<br>2 J<br>1<br>0 2 4 6 8 10 12 14<br>VGS, Gate -to -Source Voltage  (V)<br>) Ω<br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


**Fig 12.** On-Resistance vs. Gate Voltage 

**==> picture [150 x 101] intentionally omitted <==**

**----- Start of picture text -----**<br>
15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>20V<br>tp 0.01 Ω<br>**----- End of picture text -----**<br>


**Fig 14a.** Unclamped Inductive Test Circuit 

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**----- Start of picture text -----**<br>
��<br>���<br>���<br>������<br>��<br>+<br>- [�] ��<br>������<br>������������≤ 1 ��<br>������������≤ 0.1<br>**----- End of picture text -----**<br>


**Fig 15a.** Switching Time Test Circuit 

**==> picture [209 x 203] intentionally omitted <==**

**----- Start of picture text -----**<br>
700<br>ID<br>600 TOP         5.9A<br>8.6A<br>500 BOTTOM 17A<br>400<br>300<br>200<br>100<br>0<br>25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 13.** Maximum Avalanche Energy vs. Drain Current 

**==> picture [144 x 109] intentionally omitted <==**

**----- Start of picture text -----**<br>
V(BR)DSS<br>tp<br>IAS<br>**----- End of picture text -----**<br>


**Fig 14b.** Unclamped Inductive Waveforms 

**==> picture [185 x 102] intentionally omitted <==**

**----- Start of picture text -----**<br>
V<br>DS<br>90%<br>10%<br>V<br>GS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 15b.** Switching Time Waveforms 

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**==> picture [415 x 164] intentionally omitted <==**

**----- Start of picture text -----**<br>
Driver Gate Drive<br>P.W.<br>D.U.T + Period — D = ——<br>+ P.W. Period<br>) [©)]    •  Circuit Layout Considerations V tt GS=10<br>| — -  •   GroundLow StrayPlane Inductance<br> •   CurrentLow LeakageTransformerInductance 2) D.U.T. ISD Waveform<br>+<br>Reverse<br>@ - a | = - ® + RecoveryCurrent r Body Diode ForwardCurrent di/dt /\ ——<br>@ D.U.T. VDS Waveform Diode Recoverydv/dt ‘ '<br>00 we VDD<br>iv<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Ro ( 4 •   dv/dt controlledIsp controlled bybyDuty Rg Factor "D" Vpp - @ Inductor Curent<br>•<br>D.U.T. - Device Under Test Ripple  ≤ 5% e s ISD ee<br>**----- End of picture text -----**<br>


## **Fig 16.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET ® Power MOSFETs 

**==> picture [227 x 50] intentionally omitted <==**

**----- Start of picture text -----**<br>
L<br>VCC<br>DUT<br>0 oe eos ee<br>1K S<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Id<br>Vds i<br>Vgs<br>i<br>i)<br>i<br>1<br>1<br>1<br>!<br>Vgs(th)<br>_<br>'' 1<br>H 1<br>\ \<br>J |\ \\\!<br>i t ___r41__— <4 o t<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


## **Fig 17.** Gate Charge Test Circuit 

## **Fig 18.** Gate Charge Waveform 

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**==> picture [305 x 262] intentionally omitted <==**

**----- Start of picture text -----**<br>
TR TRR TRL<br>OOOO Oo © ! oo Oo oO |<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>NOTES :<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).<br>3.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>  13 INCH<br>16 mm =|<br>**----- End of picture text -----**<br>


NOTES : 1. OUTLINE CONFORMS TO EIA-481. 

## **Qualification information**[†] 

|Qualification level|Industrial<br>††<br>(per JEDEC JES D47F<br>†††guidelines )|Industrial<br>††<br>(per JEDEC JES D47F<br>†††guidelines )|
|---|---|---|
|Moisture Sensitivity Level|D-PAK|MS L1<br>(per JEDEC J-S T D-020D<br>†††)|
|RoHS compliant|Yes||



T Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability 

Higher qualification ratings may be available should the user have such requirements. 

Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ 

Applicable version of JEDEC standard at the time of product release. 

Repetitive rating;  pulse width limited by max. junction temperature. 

Starting TJ = 25°C, L = 1.2mH, RG = 50 Ω , IAS = 17A. 

Pulse width ≤ 400µs; duty cycle ≤ 2%. 

R θ is measured at TJ of approximately 90°C. 

When mounted on 1 inch square  2 oz copper pad on 1.5x1.5 in. board of FR-4 material. 

capability. 

Data and specifications subject to change without notice. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 11/2010 

www.irf.com 

8 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



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- [Supplier page](https://es.farnell.com/infineon/irlr6225trpbf/mosfet-n-ch-20v-100a-to-252aa/dp/2726021)
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