# Power MOSFET, N Channel, 55 V, 30 A, 0.014 ohm, TO-252AA, Surface Mount

![Product image](https://novapart.co/image/farnell:2687601/)

**URL**: https://novapart.co/products/IRLR3915TRPBF/power-mosfet-n-channel-55-v-30-a-0014-ohm-to-252aa
**SKU**: IRLR3915TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4560
**Stock**: 1000+
**Lead Time**: 190 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.012ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Po

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 120W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252AA |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 30A |
| Drain Source On State Resistance | 0.014ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2687601/)

## PD - 95090B 

## IRLR3915PbF IRLU3915PbF 

## HEXFET[®] Power MOSFET 

## **Features** 

Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free 

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D<br>VDSS = 55V<br>R  = 14m Ω<br>DS(on)<br>G<br>ID = 30A<br>S<br>**----- End of picture text -----**<br>


## **Description** 

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.  Additional features of this product  are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features t ~~ ~ combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. D-Pak I-Pak IRLR3915PbF IRLU3915PbF **Absolute Maximum Ratings Parameter Max. Units** ~~|~~ ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon limited) 61 ~~a~~ ID @ TC = 100°C ~~a~~ Continuous Drain Current, VGS @ 10V (See Fig.9) 43 A a ID @ TC = 25°C ~~a~~ Continuous Drain Current, VGS @ 10V (Package limited) 30 o> IDM o_o Pulsed Drain Current 240 ~~a~~ PD @TC = 25°C ~~a~~ Power Dissipation 120 W ~~aa~~ Linear Derating Factor 0.77 W/°C ~~a~~ VGS ~~a~~ Gate-to-Source Voltage ± 16 V ~~a~~ EAS Single Pulse Avalanche Energy 200 mJ ~~a~~ EAS (6 sigma) Single Pulse Avalanche Energy Tested Value 600 ~~a~~ IAR Avalanche Current See Fig.12a, 12b, 15, 16 A EAR Repetitive Avalanche Energy mJ TJ Operating Junction and -55  to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) ~~**a** =~~ **Thermal Resistance Parameter Typ. Max. Units** eses a R θ JC Junction-to-Case ––– nD 1.3 R θ JA a Junction-to-Ambient (PCB mount) ––– 50 °C/W R θ JA Junction-to-Ambient––– 110 

HEXFET(R) is a registered trademark of International Rectifier. 

www.irf.com 

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|||~~ee~~|||||
|---|---|---|---|---|---|---|
|~~Sn~~<br>~~-~~|**Parameter**<br>ee<br>~~Sn~~|**Min.**<br>ee<br>~~ee~~<br>~~es~~<br>~~es ee~~|**Typ. **<br>ee<br>~~ee~~<br>~~ee~~|**Max. **<br>ee|**Units**<br>ee|**Conditions**<br>ee|
|V(BR)DSS<br>~~Sn~~<br>~~-~~|Drain-to-Source Breakdown Voltage<br>~~es~~<br>~~Sn~~|55<br>~~ee~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es ee~~|–––<br>~~es~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~<br>~~eees~~|V<br>~~es~~|VGS= 0V, ID= 250µA<br>~~es~~|
|∆V(BR)DSS/∆TJ<br>~~Sn~~<br>~~-~~|Breakdown Voltage Temp. Coefficient<br>~~es~~<br>~~ee~~<br>~~Sn~~|–––<br>~~es ~~<br>~~es~~<br>~~es~~<br>~~ee~~<br>~~es ee~~|0.057 <br> ~~ee~~<br>~~es~~<br>~~ee~~<br>~~eeSS~~<br>~~ee~~|–––<br>~~es~~<br>~~eees~~<br>~~SS~~|V/°C<br>~~es~~|Reference to 25°C, ID= 1mA<br>~~es~~<br>~~:~~|
|RDS(on)<br>~~Sn~~<br>~~-~~|Static Drain-to-Source On-Resistance<br>~~ee~~<br>~~|~~<br>~~Sn~~|–––<br>~~es ~~<br>~~ee~~<br>~~|fT~~<br>~~es ee~~|12<br> ~~ee~~<br>~~eeSS~~<br>~~fT~~<br>~~ee~~|14<br>~~ee es~~<br>~~SS~~<br>~~fT~~|mΩ<br>~~fT~~|VGS= 10V, ID= 30A<br>~~:~~<br>~~®~~|
|||–––<br>~~ee~~<br>~~|fT~~<br>~~es ee~~|14<br>~~eeSS~~<br>~~fT~~<br>~~ee~~|17<br>~~SS~~<br>~~fT~~||VGS= 5.0V, ID= 26A<br>~~:~~<br>~~®~~|
|VGS(th)<br>~~Sn~~<br>~~-~~|Gate Threshold Voltage<br>~~ee~~<br>~~|~~<br>~~es~~<br>~~Sn~~|1.0<br>~~ee~~<br>~~| fT~~<br>~~es~~<br>~~es ee~~|–––<br>~~ee SS~~<br>~~fT~~<br>~~es~~<br>~~ee~~|3.0<br>~~SS~~<br>~~fT~~<br>~~es~~|V<br>~~fT~~<br>~~es~~|VDS= 10V, ID= 250µA<br>~~:~~<br>~~®~~<br>~~es~~|
|gfs<br>~~Sn~~<br>~~-~~|Forward Transconductance<br>~~Sn~~|42<br>~~es ee~~|–––<br>~~ee~~|–––|S|VDS= 25V, ID= 30A|
|IDSS<br>~~Sn~~<br>~~-~~|Drain-to-Source Leakage Current<br>~~Sn~~|–––<br>~~es ee~~|–––<br>~~ee~~|20|µA|VDS= 55V, VGS= 0V<br>VDS= 55V, VGS= 0V, TJ= 125°C|
|||–––<br>~~es ee~~|–––<br>~~ee~~<br>=|250|||
|IGSS<br>~~Sn~~<br>~~-~~|Gate-to-Source Forward Leakage<br>~~Sn~~<br>~~[ot~~|–––<br>~~es ee~~<br>~~[ot~~<br>~~ee~~|–––<br>~~ee~~<br>~~[ot~~|200<br>~~[ot~~|nA<br>~~[ot~~<br>~~ee~~|VGS= 16V<br>VGS= -16V<br>~~[ot~~|
||Gate-to-Source Reverse Leakage<br>~~Sn~~<br>~~[ot~~<br>~~ee~~|–––<br>~~es ee~~<br>~~[ot~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~[ot~~<br>~~ee~~|-200<br>~~[ot~~<br>~~ee~~|||
|Qg|Total Gate Charge<br>~~[ot~~<br>~~ee~~|–––<br>~~[ot~~<br>~~ee~~<br>~~ee~~|61<br>~~[ot~~<br>~~ee~~|92<br>~~[ot~~<br>~~ee~~|nC<br>~~[ot~~<br>~~ee~~|ID= 30A<br>VDS= 44V<br>VGS= 10V<br>~~[ot~~<br>~~-~~|
|Qgs|Gate-to-Source Charge|–––|9.0|14|||
|Qgd<br>~~ee~~|Gate-to-Drain("Miller")Charge<br>~~ee~~|–––<br>~~ee~~|17<br>~~ee~~|25<br>~~ee~~|||
|td(on)<br>~~ee~~|Turn-On Delay Time<br>~~ee~~|–––<br>~~ee~~|7.4<br>~~ee~~|–––<br>~~ee~~|ns|VDD= 28V<br>ID= 30A<br>RG= 8.5Ω<br>VGS= 10V<br>~~-~~<br>~~;~~|
|tr<br>~~a~~|Rise Time|–––<br>~~ee~~|51|–––|||
|td(off)<br>a<br>~~a~~|Turn-Off Delay Time<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|83<br>~~ee~~|–––<br>~~ee~~|||
|tf<br>~~a~~|Fall Time|–––<br>~~ee~~|100|–––|||
|LD<br>~~a~~<br>~~TT~~|Internal Drain Inductance<br>~~TT~~|–––<br>~~ee~~<br>~~TT~~|4.5<br>~~TT~~|–––<br>~~TT~~|~~TT~~|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>S<br>D<br>G<br>~~;~~<br>~~TT~~<br>~~@~~|
||||||nH<br>~~TT~~||
|LS<br>~~TT~~|Internal Source Inductance<br>~~TT~~|–––<br>~~TT~~|7.5<br>~~TT~~|–––<br>~~TT~~|||
|Ciss<br>~~TT~~|Input Capacitance<br>~~TT~~<br>~~ee~~|–––<br>~~TT~~<br>~~ee~~|1870<br>~~TT~~<br>~~ee~~|–––<br>~~TT~~<br>~~ee~~|pF<br>~~TT~~|VGS= 0V<br>VDS= 25V<br>~~TT~~<br>~~@~~<br>PO|
|Coss<br>~~ee~~<br>es|Output Capacitance<br>~~ee~~<br>es|–––<br>es|390|–––|||
|Crss<br>~~ee~~<br>es<br>ee|Reverse Transfer Capacitance<br>~~ee~~<br>es<br>ee|–––<br>es<br>es|74|–––||ƒ = 1.0MHz, See Fig. 5<br>PO<br>PO|
|Coss<br>es<br>ee<br>es|Output Capacitance<br>es<br>ee<br>ee|–––<br>es<br>es<br>ee<br>es|2380<br>ee|–––<br>ee||VGS= 0V,  VDS= 1.0V,  ƒ = 1.0MHz<br>PO<br>PO|
|Coss<br>ee<br>es|Output Capacitance<br>ee<br>ee|–––<br>es<br>ee<br>es|290<br>ee|–––<br>ee||VGS= 0V,  VDS= 44V,  ƒ = 1.0MHz<br>VGS= 0V, VDS= 0V to 44V<br>PO|
|Cosseff.<br>es|Effective Output Capacitance<br>ee|–––<br>ee<br>es|540<br>ee|–––<br>ee|||
|**Source-Drain Ratings and Characteristics**<br>ne<br>~~ee~~-<br>(a|||||||
|ne|**Parameter**<br>~~ee~~|**Min.**<br>-|**Typ. **<br>-|**Max. **|**Units**|**Conditions**<br>(a|
|IS<br>ne<br>~~je~~|Continuous Source Current<br>(Body Diode)<br>~~ee~~<br>~~je~~<br>~~{|~~|–––<br>-<br>~~{|[|~~|–––<br>-<br>~~[||~~|61<br>~~|~~|~~|~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>S<br>D<br>G<br>(a|
|ISM<br>ne<br>~~je~~|Pulsed Source Current<br>(Body Diode)<br>~~ee~~ <br>~~je~~<br>~~{|~~|–––<br> -<br>~~{|[|~~|–––<br>-<br>~~[||~~|240<br>~~|~~|||
|VSD<br>~~je~~<br>~~po~~|Diode Forward Voltage<br>~~je~~<br>~~{|~~<br>~~po~~|–––<br>~~{|[|~~<br>~~po~~|–––<br>~~[||~~<br>~~po~~|1.3<br>~~|~~<br>~~po~~|V<br>~~|~~<br>~~po~~|TJ= 25°C, IS= 30A, VGS= 0V|
|trr<br>~~je~~<br>~~po~~|Reverse Recovery Time<br>~~je~~<br>~~{|~~<br>~~po~~<br>~~es~~|–––<br>~~{| [|~~<br>~~po~~<br>~~es~~|62<br>~~[| | ~~<br>~~po~~|93<br> ~~|~~<br>~~po~~|ns<br>~~|~~<br>~~po~~|TJ= 25°C, IF= 30A, VDD= 25xjkl V<br>di/dt = 100A/µs<br>~~®~~|
|Qrr|Reverse RecoveryCharge<br>~~es~~|–––<br>~~es~~|110|170|nC||
|ton|Forward Turn-On Time<br>~~es ~~|Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)<br> ~~es~~<br>~~®~~|||||



|**Source-Drain Ratings and Characteristics**||
|---|---|
|**Parameter**<br>**Min.**<br>**Typ. Max. Units**<br> **Conditions**<br>IS<br>Continuous Source Current<br>MOSFET symbol<br>(Body Diode)<br>–––<br>–––<br>showing  the<br>ISM<br>Pulsed Source Current<br>integral reverse<br>(Body Diode)<br>–––<br>–––<br>p-n junction diode.<br>VSD<br>Diode Forward Voltage<br>–––<br>–––<br>1.3<br>V<br>TJ= 25°C, IS= 30A, VGS= 0V<br>trr<br>Reverse Recovery Time<br>–––<br>62<br>93<br>ns<br>TJ= 25°C, IF= 30A, VDD= 25xjkl V<br>Qrr<br>Reverse RecoveryCharge<br>–––<br>110<br>170<br>nC<br>di/dt = 100A/µs<br>ton<br>Forward Turn-On Time<br>Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)<br>S<br>D<br>G<br>61<br>240<br>ne<br>~~ee~~ -<br>(a<br>~~je~~<br>~~{| [| | |~~<br>~~po~~<br>~~es es~~<br>~~®~~||



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10000<br>VGS<br>TOP           15V<br>1000 10V<br>5.0V<br>3.0V<br>2.7V<br>100 2.5V<br>2.25V<br>BOTTOM 2.0V<br>10<br>1 P AT<br>0.1 2.0V<br>0.01 e c<br>MetHE eeeHE 20µs PULSE WIDTHTj = 25°C ett<br>0.001<br>0.1 1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br>1000.00<br>TJ = 25°C<br>T = 175°C<br>tS J<br>100.00<br>a A<br>10.00<br>1.00<br>i<br>VDS = 25V<br>f ee 20µs PULSE WIDTH<br>0.10<br>1.0 3.0 5.0 7.0 9.0 11.0 13.0 15.0<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>)<br>(Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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1000<br>VGS<br>TOP           15V<br>10V<br>5.0V<br>3.0V<br>100 2.7V<br>2.5V<br>2.25V<br>BOTTOM 2.0V<br>10<br>f f<br>|<br>2.0V<br>1<br>VACoSBA SeellAl 20µs PULSE WIDTHTj = 175°C nlHi<br>0.1<br>0.1 1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>70<br>60<br>LT TJ = 25°C [|]<br>50 P o<br>40<br>30 TJ = 175°C<br>20<br>|<br>10 yy<br>0<br>0 10 20 30 40 50 60<br>ID,Drain-to-Source Current (A)<br>Gfs, Forward Transconductance (S)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 4.** Typical Forward Transconductance vs. Drain Current 

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100000<br>VGS   = 0V,       f = 1 MHZ<br>= Ciss   = Cgs + Cgd,  Cds SHORTED<br>— Crss   = Cgd<br>C = C + C<br>10000 ; | oss   ds  gd<br>eee amen Ciss<br>1000 C le a n<br>PTTrr ee.NNSe eee Coss [|ne| |Ty<br>100<br>p t INS C<br>rss<br>10 es<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance vs.<br>Drain-to-Source Voltage<br> 1000<br> 100 Bee<br>SSS<br>a ee ee ee, ee ee ee eee<br>T  = 175      CJ °<br> 10 ee e 4 5 72a<br>nAa  Ge<br>T  = 25      CJ °<br> 1 —<br>[ee] ee ee<br>SSa [ee] SS V      = 0 V GS =<br>0.1 Ti? ttt ft 7<br>0.0 0.5 1.0 1.5 2.0<br>V     ,Source-to-Drain Voltage (V)SD<br>I     , Reverse Drain Current (A)SD<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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12<br>ID = 30A<br>T e VDS =  44V To<br>VDS =  27V<br>10 PT TT VDS =  11V S250<br>P| | yl |fZ ||<br>8 PTT TTT TTT<br>6 SeSSR0ePATTAnnee<br>4 L ,<br>PTT ATT<br>2<br>tT<br>0 Viti Te<br>0 10 20 30 40 50 60 70<br>Q   , Total Gate Charge (nC)G<br>GS<br>V     , Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


## **Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

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1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>Se CPSs | eee<br>100 A STIN LUST LTT<br>peeNi<br>eS P TSee<br>100µsec<br>10 CO U e SEOSBase IS  fdConill<br>1msec<br>Con<br>Tc = 25°C<br>Tj = 175°C<br>Single Pulse r 10msec<br>1 eeeeeae atiI<br>1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

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70 2.5<br>I D = 61A<br>LIMITED BY PACKAGE<br>60 RA Eee fe eee<br>PELL P LL 2.0 SERRE<br>50<br>po Wg<br>40 FEES EEE 1.5 PS E LER ELE EEE E ZEnnLA<br>30<br>1.0<br>PPPS = EERE<br>AEE a5; 2cnennnne<br>20 ee Bz<br>ae ee 0.5 TTT TEE Te<br>10<br>po fi fA PTET ET<br>V GS = 10V<br>0 A 0.0 PETETP Ey E<br>25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>°<br>T   , Case TemperatureC (  C)° T  , Junction TemperatureJ (    C)<br>Fig 9.   Maximum Drain Current vs. Fig 10.   Normalized On-Resistance<br>Case Temperature vs. Temperature<br> 10<br>PT UE TT TT<br>P| [EP] TTTTT<br> 1<br>D = 0.50<br>0.20<br>p 0.10 oe P DM<br>0.1 0.05<br>t 1<br>0.02 SINGLE PULSE<br>0.01 (THERMAL RESPONSE) t 2<br>ee Se eeet eea e ee e<br>om | | ey E E 1. Duty factor D =Notes: t   / t1 2<br>P E 2. Peak T J = P DM x  Z thJC + T C<br>0.01 PT [TE] ET<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>(Normalized)<br>I   , Drain Current (A)D<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>thJC<br>(Z          )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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500<br>15V ID<br>pitt<br>TOP 12A<br>21A<br>VDS L DRIVER 400 BOTTOM 30A<br>[co co<br>RG D.U.T + 300<br>- [V][DD]<br>IAS A<br>20VVGS<br>B tp 0.01 Ω 200 NERDNENEEEEPSINUNEEE<br>Fig 12a.   Unclamped Inductive Test Circuit Ef<br>V(BR)DSS<br>a tp 100 PNAPoESS A|<br>m 0 a e<br>/ Pot | |SS<br>25 50 75 100 125 150 175<br>Starting Tj, Junction Temperature (   C)°<br>/ ||<br>IAS 7 “ | SNESeee<br>Fig 12c.   Maximum Avalanche Energy<br>Fig 12b.   Unclamped Inductive Waveforms<br>vs. Drain Current<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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cS QG<br>10 ve<br>QGS QGD<br>VG<br>a<br>**----- End of picture text -----**<br>


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Charge<br>=<br>**----- End of picture text -----**<br>


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Fig 13a.   Basic Gate Charge Waveform<br>Current Regulator<br>Same Type as D.U.T.<br>a 50K Ω<br>12V .2 µ F<br>.3 µ F<br>ca D.U.T. +-VDS<br>VGS<br>3mA<br>spe<br>ont. IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 13b.** Gate Charge Test Circuit 

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2.0 O TT<br>1.5 P INEAL<br>ID = 250µA<br>EE N<br>1.0<br>P LLEEIN<br>P PE<br>0.5<br>-75 -50 -25 0 25 50 75 100 125 150 175 200<br>TJ , Temperature ( °C )<br>WLU<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 14.** Threshold Voltage vs. Temperature 

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TOR Rectifier<br>1000<br>Duty Cycle = Single Pulse<br>| | ||<br>100 e l ys SSA | Allowed avalanche Current vs<br>0.01 avalanche  pulsewidth,  tav<br>assuming  ∆ Tj = 25°C due to<br>avalanche losses<br>10 aS eti 0.05 c t oe aE SalilSe ||<br>0. 10<br>ee | | | |<br>1 | A a<br>err CTI AI-FST P<br>0.1 a nn en ll<br>1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 15.   Typical Avalanche Current vs.Pulsewidth<br>220 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>B l TOP          Single Pulse                 (For further info, see AN-1005 at www.irf.com)<br>200<br>180 N ii BOTTOM   10% Duty CycleID = 30A 1. Avalanche failures assumption:  Purely a thermal phenomenon and failure occurs at a<br>    temperature far in excess of Tjmax. This is validated for<br>160<br>140 KP WHINE     every part type.2. Safe operation in Avalanche is allowed as long asTjmax is<br>  not exceeded.<br>120 P TE NETEEE EEE 3. Equation below based on circuit and waveforms shown in<br>100 P T EN ETEET TT   Figures 12a, 12b.<br>8060 PP TTTENETTEENEEETT     avalanche pulse.5. BV = Rated breakdown voltage (1.3 factor accounts for4. PD (ave) = Average power dissipation per single<br>    voltage increase during avalanche).<br>40 P t tT TTT INGETTT T T 6. Iav = Allowable avalanche current.<br>20 S ERENE 7.  ∆ T = Allowable rise in junction temperature, not to exceed<br>0 E RRKS     T  tav = jmax Average time in avalanche.(assumed as 25°C in Figure 15, 16).<br>25 50 75 100 125 150 175   D = Duty cycle in avalanche =  tav ·f<br>Starting TJ , Junction Temperature (°C)   ZthJC(D, tav) = Transient thermal resistance, see figure 11)<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 16.** Maximum Avalanche Energy vs. Temperature 

**PD (ave) = 1/2 ( 1.3·BV·Iav) =** A **T/ ZthJC Iav = 2** A **T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav** 

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Driver Gate Drive<br>P.W.<br>D.U.T + Period — D = ——<br>+ P.W. Period<br>) [©)]    •  Circuit Layout Considerations V |t GS=10V<br> •<br>| =] - LowGround StrayPla I n eductance<br> •  Low Leakage Inductance ® D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oi - [l] Current Transformer - ® + Current r Current di/dt AN<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘<br>00 _ VDD<br>•   Re-Applied<br>•  Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( 4) •   dvidt controlled by Re Vpp - Inductor Curent [_<br>•   D.U.T. - Device Under Test es ee<br>Ripple  ≤ 5% ISD<br>Isp controlled by Duty Factor "D" ®<br>**----- End of picture text -----**<br>


**Fig 17.** 

## Recovery dv/dt Test Circuit or N-Channel HEXFET ® Power MOSFETs 

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-<br>|<br>≤ 1  ys<br>≤ 0.1 %<br>**----- End of picture text -----**<br>


**Fig 18a.** Switching Time Test Circuit 

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VDS<br>90%<br>10%<br>VGS |\< ole >!eeple<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 18b.** Switching Time Waveforms 

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EXAMPLE: THIS IS AN IRFR120<br>WITH ASSEMBLY INTERNATIONAL a PART NUMBER<br>LOT CODE 1234 RECTIFIER IRFR120 DATE CODE<br>ASSEMBLED ON WW 16, 2001 LOGO 116A YEAR 1 =  2001<br>IN THE ASSEMBLY LINE "A" 12 34 WEEK 16<br>LINE A<br>Note: "P" in assembly line positionindicates "Lead-Free" ASSEMBLYLOT CODE i a t<br>"P" in assembly line position indicates<br>"Lead-Free" qualification to the consumer-level<br>PART NUMBER<br>INTERNATIONAL cS<br>OR RECTIFIER IRFR120 P =  DESIGNATES LEAD-FREEDATE CODE<br>LOGO PRODUCT (OPTIONAL)<br>12 34 P =  DESIGNATES LEAD-FREE<br>ASSEMBLYLOT CODE imam PRODUCT QUALIFIED TO THECONSUMER LEVEL (OPTIONAL)<br>YEAR 1 =  2001<br>WEEK 16<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


## **Notes: 1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** www.irf.com 

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EXAMPLE: THIS IS AN IRFU120 PART NUMBER<br>WITH ASSEMBLYASSEMBLED ON WW 19, 2001LOT CODE 5678 INTERNATIONALRECTIFIERLOGO gS 56IRFU120119A78 DATE CODEYEAR 1 =  2001WEEK 19<br>IN THE ASSEMBLY LINE "A"<br>LINE A<br>ASSEMBLY<br>LOT CODE<br>Note: "P" in assembly line position<br>indicates Lead-Free"<br>OR<br>PART NUMBER<br>INTERNATIONAL a<br>RECTIFIER IRFU120 DATE CODE<br>LOGO P =  DESIGNATES LEAD-FREE<br>56 78 PRODUCT (OPTIONAL)<br>ASSEMBLY YEAR 1 =  2001<br>LOT CODE WEEK 19<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


## **Notes:** 

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**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 10 

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TR TRR TRL<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>12.1 ( .476 ) cc FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION -<br>11.9 ( .469 ) 7.9 ( .312 )<br>NOTES :<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).<br>3.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>|   13 INCH<br>16 mm<br>mN ae<br>**----- End of picture text -----**<br>


NOTES : 

1. OUTLINE CONFORMS TO EIA-481. 

Notes: ®© Repetitive rating;  pulse width limited by Cossoss eff. is a fixed capacitance that gives the same charging time max. junction temperature. (See fig. 11). as Coss while VDS is rising from 0 to 80% VDSS . while VDS is rising from 0 to 80% VDSS . . 

Cossoss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . © Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. @ This value determined from sample failure population. 100% tested to this value in production. 

@ Limited by TJmax, starting TJ = 25°C, © L = 0.45mH, RG = 25 Ω , IAS = 30A, VGS =10V. Part not recommended for use above this @ value. 

@ ISD ≤ 30A, di/dt ≤ 280A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. 2) Pulse width ≤ 1.0ms; duty cycle ≤ 2%. 

When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 10/2010 

www.irf.com 

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## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



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---

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