# Power MOSFET, N Channel, 12 V, 84 A, 8500 µohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:8660190/)

**URL**: https://novapart.co/products/IRLR3802PBF/power-mosfet-n-channel-12-v-84-a-8500-ohm-to-252
**SKU**: IRLR3802PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.9940
**Stock**: 200+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:84A; Drain Source Voltage Vds:12V; On Resistance Rds(on):0.0085ohm; Rds(on) Test Voltage Vgs:4.; Available until stocks are exhausted

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (17-Dec-2015) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 88W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 12V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 84A |
| Drain Source On State Resistance | 8500µohm |
| Gate Source Threshold Voltage Max | 1.9V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:8660190/)

## PD - 95089 IRLR3802PbF IRLU3802PbF 

## **Applications** 

High Frequency 3.3V and 5V input Pointof-Load Synchronous Buck Converters Power Management for Netcom, Computing and Portable Applications. Lead-Free 

## HEXFET Power MOSFET 

||HEXFET<br>Power MOSFET<br>®|Power MOSFET|
|---|---|---|
|**VDSS**|**RDS(on) max**|**Qg**|
|**12V**|**8.5m**Ω|**27nC**|



## **Benefits** 

Ultra-Low Gate Impedance 

Very Low RDS(on) Fully Characterized Avalanche Voltage and Current 

|ee|rs|||
|---|---|---|---|
|**Symbol**<br>ee|**Parameter**<br>rs|**Max.**|**Units**|
|VDS<br>ee<br>oe|Drain-Source Voltage<br>rs<br>oe|12<br>oe|V<br>oe|
|VGS<br>oe<br>~~es©~~<br>~~—~~|GSGate-to-Source Voltage<br>± 12                                  V<br>oe<br>~~©~~<br>~~ee~~|± 12                                  V<br>oe<br>~~©~~|± 12                                  V<br>oe<br>~~-—~~|
|ID@ TC= 25°C<br>~~es©~~<br>~~—~~|Continuous Drain Current, VGS@ 4.5V<br>~~©~~<br>~~ee~~|84<br>~~©~~|A<br>~~-—~~|
|ID@ TC= 100°C<br>~~es©~~<br>~~—~~|Continuous Drain Current, VGS@ 4.5V<br>~~©~~<br>~~ee~~|60<br>~~©~~||
|IDM<br>~~—~~<br>~~sh~~|Pulsed Drain Current<br>~~ee~~<br>~~sh~~|320<br>~~sh~~||
|PD@TC= 25°C<br>~~—~~<br>~~sh~~|Maximum Power Dissipation<br>~~ee~~<br>~~sh~~|88<br>~~sh~~|W<br>~~-—~~|
|PD@TC= 100°C<br>~~a~~|Maximum Power Dissipation<br>~~a~~<br>~~a~~|44<br>~~a~~|W|
|Linear Deratin|Linear DeratingFactor                                                                     0.59                              mW/°C|Factor                                                                     0.59                              mW/°C|Factor                                                                     0.59                              mW/°C|
|TJ, TSTG|Junction and Storage Temperature Range|-55  to + 175|°C|



## **Absolute Maximum Ratings** 

## **Thermal Resistance** 

||**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RθJC|Junction-to-Case|–––|1.7|°C/W|
|RθJA|Junction-to-Ambient (PCB mount)*|–––|40||
|RθJA|Junction-to-Ambient|–––|110||



> Notes ® hrough @) are on page 9 

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1 

12/7/04 

**Static @ TJ = 25°C (unless otherwise specified)** 

|**Static @ TJ = 25°C (unless otherwise specified)J = 25°C (unless otherwise specified) = 25°C (unless otherwise specified)**|**Static @ TJ = 25°C (unless otherwise specified)J = 25°C (unless otherwise specified) = 25°C (unless otherwise specified)**|
|---|---|
|**Parameter**<br>**Min.**<br>**Typ. Max.**<br>**Units**<br> **Conditions**<br>BVDSS<br>Drain-to-Source Breakdown Voltage<br>12<br>–––<br>–––<br>V<br>VGS= 0V, ID= 250µA<br>∆ΒVDSS/∆TJ<br>Breakdown Voltage Temp. Coefficient –––   0.009    –––     V/°C   Reference to 25°C, ID= 1mA<br>ee<br>es es ee<br>rs<br>~~es rsss~~<br>~~a~~<br>~~Oe~~||
|–––<br>6.5<br>8.5<br>–––<br>–––<br>30<br>mΩ<br>RDS(on)<br>Static Drain-to-Source On-Resistance<br>~~EE~~|VGS= 4.5V, ID= 15A<br>VGS= 2.8V, ID= 12A|
|VGS(th)<br>Gate Threshold Voltage<br>0.6<br>–––<br>1.9<br>V<br>VDS= VGS, ID= 250µA<br>∆VGS(th)/∆TJ<br>Gate Threshold Voltage Coefficient<br>–––<br>-3.2<br>–––<br>mV/°C<br>~~Er~~<br>ee||
|–––<br>–––<br>100<br>µA<br>–––<br>–––<br>250<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>200<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-200<br>nA<br>gfs<br>Forward Transconductance<br>31<br>–––<br>–––<br>S<br>Qg<br>Total Gate Charge<br>–––     27     41<br>Qgs1<br>Pre-Vth Gate-Source Charge<br>–––<br>3.6<br>–––<br>Qgs2<br>Post-Vth Gate-Source Charge<br>–––<br>2.0<br>–––<br>Qgd<br>Gate-to-Drain Charge<br>–––<br>10<br>–––<br>nC<br>Qgodr<br>Gate Charge Overdrive<br>–––<br>11<br>–––<br>Qsw<br>Switch Charge (Qgs2+ Qgd)<br>–––<br>12<br>–––<br>IGSS<br>IDSS<br>Drain-to-Source Leakage Current<br>~~|~~~~**|**]~~<br>[[_<br>||<br>ee~~es~~<br>~~i~~<br>ee<br>ee<br>ee<br>eess<br>ees**s**<br>ese|VDS= 9.6V, VGS= 0V<br>VDS= 9.6V, VGS= 0V, TJ= 125°C<br>VGS= 12V<br>VGS= -12V<br>VDS= 6.0V, ID= 12A<br>VDS= 6.0V<br>VGS= 5.0V<br>ID= 6.0A<br>See Fig.16|
|Qoss<br>Output Charge<br>–––<br>28<br>–––<br>nC<br>td(on)<br>Turn-On Delay Time<br>–––<br>11<br>–––<br>tr<br>Rise Time<br>–––<br>14<br>–––<br>ns<br>td(off)<br>Turn-Off Delay Time<br>–––<br>21<br>–––<br>tf<br>Fall Time<br>–––<br>17<br>–––<br>Ciss<br>Input Capacitance<br>–––<br>2490<br>–––<br>**|**<br>PO<br>po<br>esee<br>~~ee~~<br>~~ee~~|VDS= 10V, VGS= 0V<br>VDD= 6.0V, VGS= 4.5V<br>ID= 12A<br>Clamped Inductive Load<br>VGS= 0V<br>©|
|Coss<br>Output Capacitance<br>–––<br>2150<br>–––<br>pF<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>530<br>–––<br>~~C—O~~<br>eeee|VDS= 6.0V<br>ƒ = 1.0MHz|



## **Avalanche Characteristics** 

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Symbol Parameter Typ. Max. Units<br>ee<br>es EAS  ee Single Pulse Avalanche Energy >  rsQs ––– 300 mJ<br>rs DQ IAR Avalanche Current © ––– 20 A<br>Diode Characteristics<br>I S S ymbol rs Continuous Source Current Parameter ee Min. –––  rs T ––– yp. Max. 84 rs Units rs MOSFET symbol Conditions D<br>(Body Diode) showing  the<br>ISM Pulsed Source Current ––– ––– 320 integral reverse G<br>Po, eee (Body Diode)  ee p-n junction diode. @ S<br>VSD Diode Forward Voltage ––– 0.81 1.2 V TJ = 25°C, IS = 12A, VGS = 0V<br>===| ––– tT 0.65 ––– TJ = 125°C, IS = 12A, VGS = 0V  @<br>trr es Reverse Recovery Time ––– 52 78 ns TJ = 25°C, IF = 12A, VR=20V<br>Qrr es Reverse Recovery Charge  ee ––– 54 81 nC di/dt = 100A/µs @<br>trr es Reverse Recovery Time ––– 50 75 ns TJ = 125°C, IF = 12A, VR=20V<br>Qrr Reverse Recovery Charge ––– 50 75 nC di/dt = 100A/µs<br>2 www.irf.com<br>**----- End of picture text -----**<br>


## **Diode Characteristics** 

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1000 1000<br>VGS VGS<br>TOP          10V TOP          10V<br>                  4.5V                   4.5V<br>                   3.5V                    3.5V<br>100                    2.3V             2.5V eer 100                    2.5V             2.3V Baaleee aman<br>                   2.0V                    2.0V<br>                   1.8V                    1.8V<br>10 BOTTOM  1.5V = a ——T__ | | BOTTOM  1.5V | ac<br>a e e | 10 A ra|<br>1 e e ee e e<br>—— —— ———eee eee— ———ee—— aeeoee eeEHee eee<br>1.5V<br>1.5V —_— 1 o__|<br>0.1<br>~~ | | tT ty ti 20µs PULSE WIDTH — 20µs PULSE WIDTH<br>P e Tj = 25°C manu EAH Tj = 175°C rl<br>0.01 0.1<br>0.1 1 10 0.1 1 10<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>1000 1.5<br>ID = 84A<br>PT PT TI TJ = 25°C T VGS = 4.5V y<br>100 S ane ade ya<br>T = 175°C<br>J<br>10 a 7 Ane 1.0 oa<br>ee) ee 2 ee ee ee ee ee ee eee eee<br>1<br>p if | | jj | | |<br>PP<br>VDS = 5.0V<br>20µs PULSE WIDTH<br>0 PF | tT [Tt] 0.5<br>1.0 EEE 2.0 3.0 4.0 EE 5.0 6.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)<br>ID, Drain-to-Source Current (A)<br>)(Α<br>ID, Drain-to-Source Current<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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12<br>ID= 6.0AD= 6.0A= 6.0A VDS= 12VDS= 12V= 12V<br>10 Po<br>Nt<br>8<br>| {| |<br>6<br>Pp] | YY<br>4 PL fF A A<br>2<br>0<br>fi | | ft<br>0 10 20 30 40 50<br> QG  Total Gate Charge (nC)<br>Fig 6.   Typical Gate Charge Vs.<br>Gate-to-Source Voltage<br>1000<br>OPERATION IN THIS AREA<br>LIMITED BY RDS(on)DS(on)(on)<br>100<br>FIP 100µsec<br>1msec<br>ae att Sa Co<br>Ae a iil<br>10 10msec<br>Tc = 25°C<br>Tj = 175°C<br>Single Pulse<br>1<br>ea imaiiiicaniii<br>0 1 10 100<br>VDS  , Drain-toSource Voltage (V)<br>VGS, Gate-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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100000 12<br>VCGS  iss     = C = 0V,       f = 1 MHZgs  + Cgd,   Cds     SHORTED ID= 6.0AD= 6.0A= 6.0A VDS= 12VDS= 12V= 12V<br>= Crss     = Cgd  10 Po Nt<br>C  = C + C<br>oss   ds  gd<br>10000 oe 8 | {| |<br>Ciss 6<br>S e ee Pp] | YY<br>Ps t Coss TT 4 PL fF A A<br>1000<br>a Crss oo eeee 2<br>ee ee<br>0<br>100 a ell fi | | ft<br>0 10 20 30 40<br>1 10 100<br> QG  Total Gate Charge (nC)<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>1000.0 1000<br>OPERATION IN THIS AREA<br>LIMITED BY RDS(on)DS(on)(on)<br>100.0<br>100<br>Ssez4= TJ = 175°C FIP 100µsec<br>10.0<br>1msec<br>ee 2 ee eee ee ae att Sa Co<br>SS Ae a iil<br>10 10msec<br>1.0 TJ = 25°C<br>Tc = 25°C<br>VGS = 0V Tj = 175°C<br>Single Pulse<br>0.1 ee 1 ea imaiiiicaniii<br>0.0 0.5 1.0 1.5 2.0 2.5 0 1 10<br>VSD, Source-toDrain Voltage (V) VDS  , Drain-toSource Voltage (V)<br>ISD, Reverse Drain Current (A)<br>C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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LD<br>VDS<br>VDDDD<br>J<br>D.U.T<br>| VGSGS<br>Pulse Width < 1µs<br>Duty Factor < 0.1%<br>Fig 10a.   Switching Time Test Circuit<br>;<br>V<br>DS<br>90%<br>10% KV<br>V<br>GS<br>td(on)d(on) tff td(off)d(off) trr<br>**----- End of picture text -----**<br>


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100<br>LIMITED BY PACKAGE<br>80 R I AL LL VDDDD J<br>D.U.T<br>60 Da nn | VGSGS<br>Pulse Width < 1µs<br>Duty Factor < 0.1%<br>40<br>Fig 10a.   Switching Time Test Circuit<br>20 SoH ;<br>V<br>DS<br>90%<br>0<br>25 50 75 100 125 150 175<br> TC , Case Temperature (°C)<br>ttt} LA 10% KV<br>V<br>GS<br>Fig 9.   Maximum Drain Current Vs.<br>Case Temperature td(on)d(on) tff td(off)d(off) trr<br>Fig 10b.   Switching Time Waveforms<br>10<br>ee |<br>1 D  = 0.50<br>g g<br>0.20<br>e er<br>0.10<br>me Tf fT LT<br>0.1 0.05 LIU — rr<br>0.02<br>0.01<br>terry} | ft tt ff<br>0.01 P er TT |<br>SINGLE PULSE<br>a ( THERMAL RESPONSE ) 0 OO |<br>PTT ET<br>0.001 FT TT EE<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>ID , Drain Current (A)<br> thJC )<br>Thermal Response ( Z<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS A<br>PE 20VVGS<br>tp 0.01 ly Ω<br>Fig 12a.   Unclamped Inductive Test Circuit<br>V(BR)DSS<br>_. tp<br>**----- End of picture text -----**<br>


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5000<br>4000<br>e y<br>3000<br>L |<br>L it<br>2000<br>1000<br>N aa<br>0<br>p tt<br>25 50 75 100 125 150 175<br>Starting TJ, Junction Temperature (°C)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

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IAS<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

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1.4<br>1.2<br>E SGRH GHEE<br>ID = 250µA<br>1.0<br>crt<br>0.8<br>C OOP<br>0.6 C oO)<br>C OCs<br>0.4 CCCEE EEE<br>0.2<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>Fig 13.   Threshold Voltage Vs. Temperature<br>6<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>ee .3µF<br>+<br>a D.U.T. -VDS<br>VGS<br>a<br>3mA<br>vb IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 14.** Gate Charge Test Circuit 

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Driver Gate Drive<br>P.W.<br>D.U.T + {¢$ P.W. Period —— | D = —— Period<br>) [©)]    • Circuit Layout Considerations | tfi VGS=10V<br> •<br>| =] - LowGround StrayPla I n eductance<br>•   Low Leakage Inductance @ D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oi - l Current Transformer - ® + Current is Current di/dt NN<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘ '<br>00 + VDD<br>ay<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( 4 •   dvidt controlled by Re Vpp - Inductor Curent<br>•   D.U.T. - Device Under Test es ee<br>Isp controlled by Duty Factor "D" ® Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


**Fig 15.** Peak Diode Recovery dv/dt Test Circuit or N-Channel HEXFET ® Power MOSFETs 

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Id<br>Vds f1<br>1 Vgs<br>1<br>1<br>1<br>1<br>1<br>1<br>1<br>' \<br>Vgs(th) ' \<br>! \<br>' \<br>' \<br>/| ' \<br>foot |<br>1 H 1 ' 1<br><> +__»>1+#__"<-><br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 16.** Gate Charge Waveform 

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EXAMPLE: THIS IS AN IRFR120<br>PART NUMBER<br>WITH ASSEMBLY<br>INTERNATIONAL<br>LOT CODE 1234 RECTIFIER IRFU120 DATE CODE<br>ASSEMBLED ON WW 16, 1999 LOGO 916A YEAR 9 =  1999<br>IN THE ASSEMBLY LINE "A" 12 34 WEEK 16<br>LINE A<br>Note: "P" in assembly line position ASSEMBLY<br>indicates "Lead-Free" LOT CODE : : |<br>OR<br>PART NUMBER<br>INTERNATIONAL<br>RECTIFIER IRFU120 DATE CODE<br>LOGO TeaR Poi6A P =  DESIGNATES LEAD-FREE<br>12 34 PRODUCT (OPTIONAL)<br>YEAR 9 =  1999<br>ASSEMBLY { : | WEEK 16<br>LOT CODE<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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EXAMPLE: THIS IS AN IRFU120 PART NUMBER<br>INTERNATIONAL<br>WITH ASSEMBLY<br>LOT CODE 5678 RECTIFIER IRFU120 DATE CODE<br>LOGO 919A YEAR 9 =  1999<br>ASSEMBLED ON WW 19, 1999 56 78 WEEK 19<br>IN THE ASSEMBLY LINE "A"<br>LINE A<br>ASSEMBLY<br>Note:  "P" in assembly line  LOT CODE<br>position indicates "Lead-Free"<br>a<br>PART NUMBER<br>INTERNATIONAL go N<br>RECTIFIER IRFU120 DATE CODE<br>LOGO IGR Pig P =  DESIGNATES LEAD-FREE<br>56 78 PRODUCT (OPTIONAL)<br>YEAR 9 =  1999<br>ASSEMBLY WEEK 19<br>LOT CODE A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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TR TRR TRL<br>eeooooo\ | oeoo/J<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>CC, 1) ,<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>NOTES :<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).<br>3.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>|   13 INCH<br>16 mm<br>ma oo<br>**----- End of picture text -----**<br>


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NOTES :<br>**----- End of picture text -----**<br>


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1. OUTLINE CONFORMS TO EIA-481.<br>**----- End of picture text -----**<br>


Repetitive rating;  pulse width limited by Pulse width ≤ 400µs; duty cycle ≤ 2%. max. junction temperature. @ Calculated continuous current based on maximum allowable @ = 25°C, L = 1.4mH junction temperature. Package limitation current is 30A. 

@ Starting TJ = 25°C, L = 1.4mH RG = 25Ω, IAS = 20A. 

When mounted on 1" square PCB (FR-4 or G-10 Material). 

For recommended footprint and soldering techniques refer to application note #AN-994. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrialmarket. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 12/04 

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Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



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