# Power MOSFET, N Channel, 20 V, 49 A, 0.011 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:1013416/)

**URL**: https://novapart.co/products/IRLR3715ZPBF/power-mosfet-n-channel-20-v-49-a-0011-ohm-to-252
**SKU**: IRLR3715ZPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.5090
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 40W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 40W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.011ohm |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 49A |
| Drain Source On State Resistance | 0.011ohm |
| Gate Source Threshold Voltage Max | 2.1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1013416/)

## **Applications** 

High Frequency Synchronous Buck Converters for Computer Processor Power High Frequency Isolated DC-DC 

Converters with Synchronous Rectification for Telecom and Industrial Use Lead-Free | 

## **Benefits** 

PD - 95088A IRLR3715ZPbF IRLU3715ZPbF HEXFET ® Power MOSFET **VDSS RDS(on) max Qg 20V 11m 7.2nC** 

Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current 

D-Pak I-Pak IRLR3715Z IRLU3715Z 

## **Absolute Maximum Ratings** 

||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VDS<br>~~TT~~|Drain-to-Source Voltage<br>~~[EET~~<br>~~TT~~<br>~~oNw[NTVO__]~~<br>~~———~~|20<br>~~[EET~~<br>~~oNw[NTVO__]——~~|V<br>~~oNw[NTVO__]——~~|
|VGS<br>~~TT~~|Gate-to-Source Voltage<br>~~TT~~<br>~~oNw[NTVO__]~~<br>~~———~~<br>~~OO~~|± 20<br>~~oNw[NTVO__]——~~<br>~~on~~<br>||
|ID@ TC= 25°C<br>~~TT~~|Continuous Drain Current, VGS@ 10V<br>~~TT~~<br>~~oNw[NTVO__]~~<br>~~———~~<br>~~OO~~|49<br>~~oNw[NTVO__]——~~<br>~~on~~<br>|A<br>~~oNw[NTVO__]——~~|
|ID@ TC= 100°C|Continuous Drain Current, VGS@ 10V<br><br>~~———~~<br>~~OO~~|35<br>~~——~~<br>~~on~~<br>~~-NY"—_~~||
|IDM|Pulsed Drain Current<br><br>~~———~~<br>~~OO~~|200<br>~~——~~<br>~~on~~<br>~~-NY"—_~~||
|PD@TC= 25°C|Maximum Power Dissipation<br><br>~~———~~<br>~~OO ~~<br>~~a~~<br>~~Ee~~|40<br>~~——~~<br>~~on~~<br> ~~-NY"—_~~<br>~~a~~<br>~~Ee~~|W<br>~~——~~<br>~~Ee~~|
|PD@TC= 100°C|Maximum Power Dissipation<br>~~Ee~~|20<br>~~Ee~~||
|~~po~~|Linear Derating Factor<br>~~Ee~~<br>~~Gn~~<br>~~po~~|0.27<br>~~Ee~~<br>~~Gn~~<br>~~po~~|W/°C<br>~~Ee~~<br>~~Gn~~<br>~~po~~|
|TJ<br>TSTG<br>~~po~~|Operating Junction and<br>Storage Temperature Range<br>~~po~~|-55  to + 175<br>~~po~~|°C<br>~~po~~|
|~~po~~|Soldering Temperature, for 10 seconds<br>~~po~~|300 (1.6mm from case)<br>~~po~~||



Notes 0) hrough ©) are on page 11 

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**Static @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**|**Typ.**|**Max. **<br>~~QO~~|**Units**<br>~~QO~~|**Conditions**|
|---|---|---|---|---|---|---|
|BVDSS|Drain-to-Source Breakdown Voltage<br>~~Gn~~|20<br>~~Gn~~<br>~~en~~|–––<br>~~Gn~~<br>~~en~~|–––<br>~~Gn~~<br>~~QO~~|V<br>~~Gn~~<br>~~QO~~|VGS= 0V, ID= 250µA<br>~~Gn~~|
|∆ΒVDSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~es~~|–––<br>~~es~~<br>~~en~~<br>~~|~~|13<br>~~es~~<br>~~en~~<br>~~|~~|–––<br>~~QO~~<br>~~es~~<br>~~O~~<br>|mV/°C<br>~~QO~~<br>~~es~~<br>~~O~~|Reference to 25°C, ID= 1mA<br>~~es~~<br>~~OE~~|
|RDS(on)<br>~~Sn~~|Static Drain-to-Source On-Resistance<br>~~es~~<br>~~Se~~<br>~~Sn~~|–––<br>~~es~~<br>~~en~~<br>~~Se~~<br>~~|~~|8.8<br>~~es~~<br>~~en~~<br>~~Se~~<br>~~|~~|11<br>~~es~~<br>~~Se~~<br>~~O~~<br>|mΩ<br>~~es~~<br>~~Se~~<br>~~O~~<br>~~ee~~|VGS= 10V, ID= 15A<br>~~es~~<br>~~Se~~<br>~~OE~~|
|||–––<br>~~Se~~<br>~~|~~|12.4<br>~~Se~~<br>~~| |~~<br>~~A~~|15.5<br>~~Se~~<br>~~O~~<br>~~|~~<br>~~el~~||VGS= 4.5V, ID= 12A<br>~~Se~~<br>~~OE~~<br>~~®~~|
|VGS(th)<br>~~Sn~~|Gate Threshold Voltage<br>~~Se~~<br>~~Sn~~|1.65<br>~~Se~~<br>~~|~~<br>~~ee~~|2.1<br>~~Se~~<br>~~| |~~<br>~~A~~<br>~~es~~|2.55<br>~~Se~~<br>~~O~~<br>~~|~~<br>~~el~~|V<br>~~Se~~<br>~~O~~<br>~~ee~~|VDS= VGS, ID= 250µA<br>~~Se~~<br>~~OE~~<br>~~®~~<br>~~_E~~|
|∆VGS(th)/∆TJ<br>~~Sn~~|Gate Threshold Voltage Coefficient<br>~~Sn~~<br>~~ee~~|–––<br><br>~~ee~~<br>~~ee~~<br>~~**|**~~|-4.8<br>~~|~~<br>~~A~~<br>~~ee~~<br>~~es~~<br>~~**|**~~|–––<br>~~|~~<br>~~el~~<br>~~ee~~|mV/°C<br>~~ee~~<br>~~ee~~||
|IDSS<br>~~Sn~~|Drain-to-Source Leakage Current<br>~~Sn~~<br>~~Ee~~|–––<br><br>~~ee ~~<br>~~Ee~~<br>~~**|**~~|–––<br>~~|~~<br>~~A~~<br> ~~es~~<br>~~Ee~~<br>~~**|**~~|1.0<br>~~|~~<br>~~el ~~<br>~~Ee~~|µA<br> ~~ee~~<br>~~Ee~~|VDS= 16V, VGS= 0V<br>~~®~~<br>~~Ee~~<br>~~_E~~|
|||–––<br>~~Ee~~<br>~~**|**~~|–––<br>~~Ee~~<br>~~**|**~~|150<br>~~Ee~~||VDS= 16V, VGS= 0V, TJ= 125°C<br>~~Ee~~<br>~~_E~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~a~~|–––<br>~~**|**~~<br>~~a~~<br>~~FT~~|–––<br>~~**|**~~<br>~~a~~<br>~~FTrT~~|100<br>~~a~~<br>~~rT~~|nA<br>~~a~~<br>~~nd~~|VGS= 20V<br>~~_E~~<br>~~a~~|
||Gate-to-Source Reverse Leakage<br>~~a~~|–––<br>~~a~~<br>~~FT~~<br>~~ne~~|–––<br>~~a~~<br>~~FTrT~~<br>~~Gs~~|-100<br>~~a~~<br>~~rT~~<br>~~nd~~||VGS= -20V<br>~~a~~|
|gfs|Forward Transconductance<br>~~a~~<br>~~es~~|33<br>~~a~~<br>~~FT~~<br>~~es~~<br>~~ne~~<br>~~ee~~|–––<br>~~a~~<br>~~FT rT~~<br>~~es~~<br>~~Gs~~<br>~~ee~~|–––<br>~~a~~<br>~~rT~~<br>~~es~~<br>~~nd~~|S<br>~~a~~<br>~~es~~<br>~~nd~~|VDS= 10V, ID= 12A<br>~~a~~<br>~~es~~|
|Qg|Total Gate Charge<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~ne ~~<br>~~es~~<br>~~ee~~<br>~~ee~~|7.2<br>~~es~~<br> ~~Gs ~~<br>~~es~~<br>~~ee~~<br>~~es~~|11<br>~~es~~<br> ~~nd~~<br>~~es~~|nC<br>~~es~~<br>~~nd~~|See Fig. 16<br>VGS= 4.5V<br>ID= 12A<br>VDS= 10V<br>~~es~~|
|Qgs1|Pre-Vth Gate-to-Source Charge<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|2.3<br> ~~ee~~<br>~~ee~~<br>~~es~~<br>~~ee~~|–––<br>~~ee~~|||
|Qgs2|Post-Vth Gate-to-Source Charge<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|0.90<br> ~~es~~<br>~~ee~~<br>~~ee~~<br>~~es~~|–––<br>~~ee~~|||
|Qgd|Gate-to-Drain Charge<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|2.6<br> ~~ee~~<br>~~ee~~<br>~~es~~<br>~~ee~~|–––<br>~~ee~~|||
|Qgodr|Gate Charge Overdrive<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|1.4<br> ~~es~~<br>~~ee~~<br>~~ee~~<br>~~es~~|–––<br>~~ee~~|||
|Qsw|Switch Charge (Qgs2+ Qgd)<br>~~ee~~<br>~~es~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~tn~~<br>|3.5<br> ~~ee~~<br>~~ee~~<br>~~es~~<br>~~tn~~<br>|–––<br>~~ee~~<br>~~Gd~~|||
|Qoss|Output Charge<br>~~ee~~<br>~~es~~<br>~~es~~|–––<br>~~ee~~<br>~~ee ~~<br>~~es~~<br>~~tn~~<br>~~ee~~|3.8<br>~~ee~~<br> ~~es~~<br>~~es~~<br>~~tn~~<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~Gd~~|nC<br>~~es~~|VDS= 10V, VGS= 0V<br>~~es~~<br>®|
|td(on)|Turn-On DelayTime<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~tn~~<br>~~ee~~<br>~~ee~~|7.8<br>~~es~~<br>~~tn~~<br>~~es~~<br>~~ee~~|–––<br>~~es~~<br>~~Gd~~|ns<br>~~es~~|Clamped Inductive Load<br>VDD= 10V, VGS= 4.5V<br>ID= 12A<br>~~es~~<br>®|
|tr|Rise Time<br>~~es ~~<br>~~ee~~|–––<br>~~tn~~<br> ~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|13<br>~~tn ~~<br> ~~es~~<br>~~ee~~<br>~~ee~~<br>~~es~~|–––<br> ~~Gd~~<br>~~ee~~|||
|td(off)|Turn-Off DelayTime<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|10<br> ~~ee~~<br>~~ee~~<br>~~es~~<br>~~ee~~|–––<br>~~ee~~|||
|tf|Fall Time<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|4.3<br> ~~es~~<br>~~ee~~<br>~~ee~~<br>~~es~~|–––<br>~~ee~~|||
|Ciss|Input Capacitance<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|810<br> ~~ee~~<br>~~ee~~<br>~~es~~<br>~~ee~~|–––<br>~~ee~~|pF|VGS= 0V<br>VDS= 10V<br>ƒ= 1.0MHz|
|Coss|Output Capacitance<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|270<br> ~~es~~<br>~~ee~~<br>~~ee~~<br>~~es~~|–––<br>~~ee~~|||
|Crss|Reverse Transfer Capacitance<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~|150<br> ~~ee~~<br>~~ee~~<br>~~es~~|–––<br>~~ee~~|||



## **Diode Characteristics** 

||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|IS|Continuous Source Current<br>(Body Diode)|–––|–––|49|A|S<br>D<br>G<br>MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.|
|ISM|(Body Diode)<br>Pulsed Source Current<br>(Body Diode)|–––<br>~~ee Gs~~|–––<br>~~Gs~~|200<br>~~en Gs~~|~~Gs~~||
|VSD|Diode Forward Voltage<br>~~es~~<br>~~+~~|–––<br>~~es~~<br>~~ee Gs~~<br>~~+~~|–––<br>~~es~~<br>~~Gs~~<br>~~+~~|1.0<br>~~es~~<br>~~en Gs~~<br>~~+40”~~|V<br>~~es~~<br>~~Gs~~<br>~~+40”~~|TJ= 25°C, IS= 12A, VGS= 0V<br>~~es~~<br>~~+40”~~|
|trr|Reverse RecoveryTime<br>~~es~~<br>~~+~~<br>~~es~~|–––<br>~~es~~<br>~~ee Gs~~<br>~~+~~<br>~~es~~|11<br>~~es~~<br>~~Gs ~~<br>~~+~~<br>~~es~~|17<br>~~es~~<br> ~~en Gs~~<br>~~+40”~~|ns<br>~~es~~<br>~~Gs~~<br>~~+40”~~|TJ= 25°C, IF= 12A, VDD= 10V<br>di/dt = 100A/µs<br>~~es~~<br>~~+40”~~<br>~~®~~|
|Qrr|Reverse RecoveryCharge<br>~~+~~<br>~~es~~|–––<br>~~+~~<br>~~es~~|3.5<br>~~+~~<br>~~es~~|5.3<br>~~+40”~~|nC<br>~~+40”~~||
|ton|Forward Turn-On Time<br>~~+~~<br>~~es ~~<br>~~re~~|Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)<br>~~+ +40”~~<br> ~~es es~~<br>~~®~~<br>~~re~~|||||



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10000<br>VGS<br>TOP           10V<br>4.5V<br>1000 3.7V<br>3.5V<br>3.3V3.0V a ee ee eee<br>100 2.7V Pe<br>BOTTOM 2.5V = ae<br>SSS,<br>10<br>1<br>e e ee eee<br>= ea eee eee 2.5V } |_|<br>0.1<br>S es eal<br>20µs PULSE WIDTH<br>eth Tj = 25°C meee<br>0.01<br>0.1 1 10<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br>1000<br>ee es ee ee ee<br>100 TJ = 175°C<br>s y)<br>10 Fe et fet tt<br>y/o<br>a ee T = 25°C ee ee ee<br>J<br>1<br>S S<br>0.1 eePEee eeEEee ee ee<br>0 2 4 6 8 10 12<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>)(Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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1000<br>VGS<br>TOP           10V<br>4.5V<br>3.7V<br>3.5V<br>100 3.3V3.0V | | | [bem<br>2.7V ttFY<br>BOTTOM 2.5V SSi——— ===<br>10<br>2.5V<br>1 P oe<br>Ha ea SSS SSSeetSS Sete<br>20µs PULSE WIDTH<br>eel Tj = 175°C EH<br>0.1<br>0.1 1 10<br>VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>2.0<br>ID = 30A<br>VGS = 10V<br>1.5 F L EEEEEELLLE<br>T TTLL | LDP<br>Lb Za<br>1.0<br>FZ “|<br>eat LLL LEE<br>0.5 PEELLE LEELA<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Junction Temperature (°C)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance vs. Temperature 

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10000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = Cgs + Cgd,  Cds SHORTED<br>Crss   = Cgd<br>_— Coss  = Cds + Cgd<br>1000 Ciss<br>C<br>oss<br>Crss<br>100 S e<br>eePPee eeI<br>10<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance vs.<br>Drain-to-Source Voltage<br>1000.00<br>100.00<br>S e _28<br>T = 175°C<br>J<br>10.00<br>| YY jj | | |<br>T = 25°C<br>J<br>1.00<br>Ap o<br>VGS = 0V<br>oe<br>0.10<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0<br>VSD, Source-to-Drain Voltage (V)<br>C, Capacitance(pF)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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6.0<br>I = 12A<br>D<br>5.0 VVDSDS= 16V= 10V {|/<br>4.0<br>3.0<br>2.0 L Z<br>1.0<br>0.0 Yft i | ls<br>0 2 4 6 8 10<br> QG  Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

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1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100<br>po e] LL<br>10<br>p aPee ta 100µsec | TIL<br>1msec<br>1 10msec<br>EP<br>Tc = 25°C<br>Tj = 175°C<br>Single Pulse<br>= = :<br>0.1<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

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50 2.5<br>Limited By Package<br>40<br>Ve SNELL<br>2.0<br>30 Vaan a ne N<br>\ AL EINNLE<br>ID = 250µA<br>20<br>“ EE L<br>1.5<br>100 Ep EREo\ 1.0 E LL ENG:<br>25 50 75 100 125 NN 150 175 -75 LEE -50 -25 0 25 50 75 100 125 150 175 200<br>TJ , Temperature ( °C )<br> TC , Case Temperature (°C)<br>Fig 9.   Maximum Drain Current vs. Fig 10.   Threshold Voltage vs. Temperature<br>Case Temperature<br>10<br>D = 0.50<br>1 R eseUT | | aer HI|HHT<br>mA 0.100.200.05 or τJ τJτ1τ1 R1 R1 τ2 τR22 R2 Rτ33 R τ3 3 τR4τ4R4 4 τCτ Ri (°C/W)   1.1512       0.0000822.2284       0.0008970.3256       0.053599 ||  τi (sec)<br>= AZ tT? 77 =><br>Ci= τi/Ri 0.0448       0.074119<br>0.1 0.02 Ci i/Ri<br>0.01 P DM<br>t 1<br>me SINGLE  PULSE ee t 2<br>( THERM AL RESPONSE ) Notes:<br>1. Duty factor D = t   / t1 2<br>2. Peak T J = P DM x  Z thJC + T C<br>0.01 4 eats 55 1 ni | eea<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>ID,  Drain Current (A)<br>VGS(th) Gate threshold Voltage (V)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>oh 20VVGS<br>tp 0.01Ω<br>:<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

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V(BR)DSS<br><> tp<br>/ ‘y<br>/ |<br>IAS<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>rt .3µF<br>LLjt +<br>D.U.T. -VDS<br>VGS __<br>3mA<br>oe |<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 13.** Gate Charge Test Circuit 

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80<br>ID<br>O LE<br>70 TOP         4.2A<br>6.9A<br>\Gnnnn<br>6050 P ASE BOTTOM 12A<br>40 C ONE<br>30<br>N N<br>20<br>E SSENSE<br>10<br>P OSAA TTT<br>C PPS<br>0<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy vs. Drain Current 

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LD<br>VDS<br>VDD ah<br>D.U.T<br>VGS<br>Pulse Width < 1µs<br>Duty Factor < 0.1%<br>T<br>Fig 14a.   Switching Time Test Circuit<br>V<br>DS<br>90%<br>v<br>10%<br>V<br>GS<br>td(on) tr td(off) tf<br>Fig 14b.   Switching Time Waveforms<br>**----- End of picture text -----**<br>


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Driver Gate Drive<br>P.W.<br>D.U.T + {+ P.W. Period ——— + D = —— Period<br>) [©)]    • Circuit Layout Considerations | t V | GS=10V<br> •<br>| =] - LowGround StrayPla I n eductance<br> •   Low Leakage Inductance 2) D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oi - [l] Current Transformer - ® + Current r Current di/dt NN<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘<br>00 +> VDD<br>ma<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( A •   dvidt controlled by Re Vpp - Inductor Curent<br>•   D.U.T. - Device Under Test es ee<br>Isp controlled by Duty Factor "D" ® Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


**Fig 15.** 

Recovery dv/dt Test Circuit or N-Channel HEXFET ® Power MOSFETs 

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Id<br>Vds f'<br>1 Vgs<br>I<br>1<br>1<br>1<br>1<br>I<br>1<br>|<br>H \<br>Vgs(th) !! \\<br>! \<br>! \<br>H \<br>H [\]<br>1 ot | 1<br>1 H ! ' |<br>><1) o t<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 16.** Gate Charge Waveform 

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## **Power MOSFET Selection for Non-Isolated DC/DC Converters** 

## **Control FET** 

## **Synchronous FET** 

The power loss equation for Q2 is approximated by; 

_P = P + P + P + P loss conduction switching drive output_ 

This can be expanded and approximated by; 

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*dissipated primarily in Q1. 

For the synchronous MOSFET Q2, Rds(on) is an important characteristic; however, once again the importance of gate charge must not be overlooked since it impacts three critical areas. Under light load the MOSFET must still be turned on and off by the control IC so the gate drive losses become much more significant.  Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that are transfered to Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs’ susceptibility to Cdv/dt turn on. 

The drain of Q2 is connected to the switching node of the converter and therefore sees transitions between ground and Vin. As Q1 turns on and off there is a rate of change of drain voltage dV/dt which is capacitively coupled to the gate of  Q2 and can induce a voltage spike on the gate that is sufficient to turn the MOSFET on, resulting in shoot-through current . The ratio of Q /Q must be minimized to reduce the gd gs1 potential for Cdv/dt turn on. 

Figure A:  Qoss Characteristic 

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**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRFR120<br>PART NUMBER<br>WITH ASSEMBLY<br>INTERNATIONAL<br>LOT CODE 1234 RECTIFIER IRFU120 DATE CODE<br>ASSEMBLED ON WW 16, 1999 LOGO 916A YEAR 9 =  1999<br>IN THE ASSEMBLY LINE "A" 12 34 WEEK 16<br>LINE A<br>Note: "P" in assembly line position ASSEMBLY<br>indicates "Lead-Free" LOT CODE : : |<br>OR<br>PART NUMBER<br>INTERNATIONAL<br>RECTIFIER IRFU120 DATE CODE<br>LOGO TeaR Poca P =  DESIGNATES LEAD-FREE<br>12 34 PRODUCT (OPTIONAL)<br>YEAR 9 =  1999<br>ASSEMBLY | : t WEEK 16<br>LOT CODE<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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**==> picture [289 x 164] intentionally omitted <==**

**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRFU120 PART NUMBER<br>INTERNATIONAL<br>WITH ASSEMBLY<br>LOT CODE 5678 RECTIFIER IRFU120 DATE CODE<br>LOGO 919A YEAR 9 =  1999<br>ASSEMBLED ON WW 19, 1999 56 78 WEEK 19<br>IN THE ASSEMBLY LINE "A"<br>LINE A<br>ASSEMBLY<br>Note:  "P" in assembly line  LOT CODE<br>position indicates "Lead-Free"<br>a<br>PART NUMBER<br>INTERNATIONAL gS<br>RECTIFIER IRFU120 DATE CODE<br>LOGO TEAR P9194 P =  DESIGNATES LEAD-FREE<br>56 78 PRODUCT (OPTIONAL)<br>YEAR 9 =  1999<br>ASSEMBLY WEEK 19<br>LOT CODE A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
TR TRR TRL<br>eeooooo\ | oeoo/J<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>CeCe, OO)<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>NOTES :<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).<br>3.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>|   13 INCH<br>16 mm<br>mN =<br>**----- End of picture text -----**<br>


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NOTES :<br>1. OUTLINE CONFORMS TO EIA-481.<br>**----- End of picture text -----**<br>


Repetitive rating;  pulse width limited by max. junction temperature. @ Starting TJ = 25°C, L = 0.27mH, RG = 25Ω, IAS = 12A. 

Pulse width ≤ 400µs; duty cycle ≤ 2%. 

@ Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 30A. © When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 12/04 

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Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



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