# Power MOSFET, N Channel, 20 V, 37 A, 0.015 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:1436991/)

**URL**: https://novapart.co/products/IRLR3714ZPBF/power-mosfet-n-channel-20-v-37-a-0015-ohm-to-252
**SKU**: IRLR3714ZPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2940
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:37A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.015ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.1V; Power Dissipa

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 35mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 37A |
| Drain Source On State Resistance | 0.015ohm |
| Gate Source Threshold Voltage Max | 2.1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1436991/)

## **Applications** 

High Frequency Synchronous Buck Converters for Computer Processor Power High Frequency Isolated DC-DC 

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IRLR3714ZPbF<br>IRL 714ZPbF<br>HEXFET ® Power MOSFET<br>VDSS RDS(on) max Qg<br>20V 15m 4.7nC<br>|__| | +<br>**----- End of picture text -----**<br>


Converters with Synchronous Rectification for Telecom and Industrial Use Lead-Free 

## **Benefits** 

Very Low RDS(on) at 4.5V VGS 

Ultra-Low Gate Impedance 

Fully Characterized Avalanche Voltage 

D-Pak I-Pak IRLR3714Z IRLU3714Z 

and Current 

## **Absolute Maximum Ratings** 

||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VDS<br>~~———~~|Drain-to-Source Voltage<br>~~LO~~<br><br>~~———~~|20<br>~~LO~~<br>~~——~~|V<br>~~——~~|
|VGS<br>~~———~~<br>~~a~~|Gate-to-Source Voltage<br>~~oe.~~<br>~~———~~<br>~~a~~|± 20<br>~~oe.——~~<br>~~en~~||
|ID@ TC= 25°C<br>~~———~~<br>~~a~~|Continuous Drain Current, VGS@ 10V<br>~~oe.~~<br>~~———~~<br>~~a~~|37<br>~~oe.——~~<br>~~en~~|A<br>~~——~~|
|ID@ TC= 100°C<br>~~———~~<br>~~a~~|Continuous Drain Current, VGS@ 10V<br><br>~~———~~<br>~~a~~|26<br>~~——~~<br>~~en~~||
|IDM<br>~~———~~<br>~~a~~|Pulsed Drain Current<br><br>~~———~~<br>~~a~~<br>~~O~~|144<br>~~——~~<br>~~en~~<br>~~O~~||
|PD@TC= 25°C<br>~~———~~<br>~~a~~|Maximum Power Dissipation<br><br>~~———~~<br>~~a~~<br>~~TW~~<br>~~ee~~|35<br>~~——~~<br>~~en~~<br>~~TW~~<br>~~ee~~|W<br>~~——~~<br>~~ee~~|
|PD@TC= 100°C|Maximum Power Dissipation<br>~~ee~~|18<br>~~ee~~||
|~~po~~|Linear Derating Factor<br>~~ee~~<br>~~TTT”~~<br>~~po~~|0.23<br>~~ee~~<br>~~TTT”~~<br>~~po~~|W/°C<br>~~ee~~<br>~~TTT”~~<br>~~po~~|
|TJ<br>TSTG<br>~~po~~|Operating Junction and<br>Storage Temperature Range<br>~~po~~|-55  to + 175<br>~~po~~|°C<br>~~po~~|
|~~po~~|Soldering Temperature, for 10 seconds<br>~~po~~|300 (1.6mm from case)<br>~~po~~||



Notes 0) hrough ©) are on page 11 

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1 12/7/04 

**Static @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**<br>~~ee~~|**Typ.**<br>~~Gs~~|**Max. **<br>~~nd~~|**Units**<br>~~nd~~|**Conditions**|
|---|---|---|---|---|---|---|
|BVDSS|Drain-to-Source Breakdown Voltage<br>~~es~~|20<br>~~es~~<br>~~ee~~<br>~~Gs~~|–––<br>~~es~~<br>~~Gs~~<br>~~Os~~|–––<br>~~es~~<br>~~nd~~<br>~~sd~~|V<br>~~es~~<br>~~nd~~<br>~~sd~~|VGS= 0V, ID= 250µA<br>~~es~~|
|∆ΒVDSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~ee ~~<br>~~es~~<br>~~Gs~~|14<br>~~es~~<br> ~~Gs ~~<br>~~es~~<br>~~Os~~|–––<br>~~es~~<br> ~~nd~~<br>~~es~~<br>~~sd~~|mV/°C<br>~~es~~<br>~~nd~~<br>~~es~~<br>~~sd~~|Reference to 25°C, ID= 1mA<br>~~es~~<br>~~es~~|
|RDS(on)<br>~~Sn~~|Static Drain-to-Source On-Resistance<br>~~EE~~<br>~~Sn~~|–––<br>~~Gs ~~<br>~~EE~~<br>~~|~~|12<br> ~~Os ~~<br>~~EE~~<br>~~| |~~|15<br> ~~sd~~<br>~~EE~~<br>~~|~~|mΩ<br>~~sd~~<br>~~EE~~<br>~~ee~~|VGS= 10V, ID= 15A<br>~~EE~~<br>~~©~~|
|||–––<br>~~EE~~<br>~~|~~<br>~~nd~~|20<br>~~EE~~<br>~~| |~~<br>~~nd~~|25<br>~~EE~~<br>~~|~~<br>~~el~~||VGS= 4.5V, ID= 12A<br>~~EE~~<br>~~©~~|
|VGS(th)<br>~~Sn~~|Gate Threshold Voltage<br>~~Sn~~|1.65<br>~~|~~<br>~~nd~~<br>~~ee~~|2.1<br>~~| |~~<br>~~nd~~<br>~~es~~|2.55<br>~~|~~<br>~~el~~|V<br>~~ee~~|VDS= VGS, ID= 250µA<br>~~©~~<br>~~_E~~|
|∆VGS(th)/∆TJ<br>~~Sn~~|Gate Threshold Voltage Coefficient<br>~~Sn~~<br>~~ee~~|–––<br>~~|~~<br>~~nd~~<br>~~ee~~<br>~~ee~~<br>~~|~~|-5.2<br>~~| |~~<br>~~nd~~<br>~~ee~~<br>~~es~~<br>~~|~~|–––<br>~~|~~<br>~~el~~<br>~~ee~~<br>|mV/°C<br>~~ee~~<br>~~ee~~||
|IDSS<br>~~Sn~~|Drain-to-Source Leakage Current<br>~~Sn~~<br>~~RE~~|–––<br>~~|~~<br>~~nd~~<br>~~ee~~<br>~~RE~~<br>~~|~~|–––<br>~~| |~~<br>~~nd ~~<br>~~es~~<br>~~RE~~<br>~~|~~|1.0<br>~~|~~<br> ~~el ~~<br>~~RE~~<br>|µA<br> ~~ee~~<br>~~RE~~|VDS= 16V, VGS= 0V<br>~~©~~<br>~~RE~~<br>~~_E~~|
|||–––<br>~~RE~~<br>~~|~~|–––<br>~~RE~~<br>~~||~~|150<br>~~RE~~<br>~~|~~||VDS= 16V, VGS= 0V, TJ= 125°C<br>~~RE~~<br>~~_E~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~oe]~~<br>~~**|**~~|–––<br>~~|~~<br>~~oe]~~<br>~~**|**~~|–––<br>~~|~~<br>~~oe]~~|100<br><br>~~oe]~~|nA<br>~~oe]~~|VGS= 20V<br>~~_E~~<br>~~oe]~~|
||Gate-to-Source Reverse Leakage<br>~~oe]~~<br>~~**|**~~|–––<br>~~oe]~~<br>~~**|**~~|–––<br>~~oe]~~<br>~~|~~|-100<br>~~oe]~~<br>~~|~~<br>~~Gd~~||VGS= -20V<br>~~oe]~~|
|gfs|Forward Transconductance<br>~~**|**~~<br>~~Gs~~|21<br>~~**|**~~<br>~~Gs~~<br>~~ee~~|–––<br>~~Gs~~<br>~~ee~~|–––<br>~~Gs~~<br>~~Gd~~|S<br>~~Gs~~|VDS= 10V, ID= 12A<br>~~Gs~~|
|Qg|Total Gate Charge<br>~~es~~|–––<br>~~es~~<br>~~ee~~<br>~~ee~~|4.7<br>~~es~~<br>~~ee~~<br>~~es~~|7.1<br>~~Gd~~<br>~~es~~|nC|See Fig. 16<br>VDS= 10V<br>VGS= 4.5V<br>ID= 12A|
|Qgs1|Pre-Vth Gate-to-Source Charge<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|1.7<br> ~~ee~~<br>~~ee~~<br>~~es~~<br>~~ee~~|–––<br>~~ee~~|||
|Qgs2|Post-Vth Gate-to-Source Charge<br>~~es~~|–––<br>~~ee ~~<br>~~es~~<br>~~ee~~<br>~~ee~~|0.7<br> ~~es~~<br>~~es~~<br>~~ee~~<br>~~es~~|–––<br>~~es~~|||
|Qgd|Gate-to-Drain Charge<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|1.7<br> ~~ee~~<br>~~ee~~<br>~~es~~<br>~~ee~~|–––<br>~~ee~~|||
|Qgodr|Gate Charge Overdrive<br>~~es~~|–––<br>~~ee ~~<br>~~es~~<br>~~ee~~<br>~~ee~~|0.6<br> ~~es~~<br>~~es~~<br>~~ee~~<br>~~es~~|–––<br>~~es~~|||
|Qsw|Switch Charge (Qgs2+ Qgd)<br>~~ee~~<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~Ge~~<br>|2.4<br> ~~ee~~<br>~~ee~~<br>~~es~~<br>~~ss~~<br>|–––<br>~~ee~~<br>~~ss~~|||
|Qoss|Output Charge<br>~~es~~<br>~~ee~~|–––<br>~~ee ~~<br>~~es~~<br>~~Ge~~<br>~~ee~~|2.6<br> ~~es~~<br>~~es~~<br>~~ss~~<br>~~es~~|–––<br>~~es~~<br>~~ss~~|nC<br>~~es~~|VDS= 10V, VGS= 0V<br>~~es~~<br>@|
|td(on)|Turn-On DelayTime<br>~~ee~~|–––<br>~~Ge~~<br>~~ee~~<br>~~ee~~|5.4<br>~~ss~~<br>~~es~~<br>~~ee~~|–––<br>~~ss~~|ns|ID= 12A<br>VDD= 15V, VGS= 4.5V<br>Clamped Inductive Load<br>@|
|tr|Rise Time<br>~~ee ~~<br>~~es~~|–––<br>~~Ge ~~<br> ~~ee ~~<br>~~es~~<br>~~ee~~<br>~~ee~~|7.6<br> ~~ss~~<br> ~~es~~<br>~~es~~<br>~~ee~~<br>~~es~~|–––<br>~~ss~~<br>~~es~~|||
|td(off)|Turn-Off DelayTime<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|9.2<br> ~~ee~~<br>~~ee~~<br>~~es~~<br>~~ee~~|–––<br>~~ee~~|||
|tf|Fall Time<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|4.3<br> ~~es~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|||
|Ciss|Input Capacitance<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|560<br>~~ee~~<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|pF|ƒ= 1.0MHz<br>VGS= 0V<br>VDS= 10V|
|Coss|Output Capacitance<br>~~es~~|–––<br>~~ee ~~<br>~~es~~<br>~~ee~~<br>~~ee~~|180<br> ~~ee~~<br>~~es~~<br>~~ee~~<br>~~es~~|–––<br>~~es~~|||
|Crss|Reverse Transfer Capacitance<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~|95<br> ~~ee~~<br>~~ee~~<br>~~es~~|–––<br>~~ee~~|||



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1000<br>r—1—-Fae FteelETOP t0V9.0V<br>100<br>P T ee bov<br>y CC ——— .<br>10 g ee Su<br>SE ee<br>1 a eelll<br>3.0V<br>aoe oe 60µs PULSE WIDTH H|<br>Tj = 25°C<br>0.1 ninaPIE meanil(I<br>0.10 11 1010 100100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br>1000<br>a ee ee ee ee ee ee<br>TJ = 25°C<br>100 ftpf | | | eeeer<br>———— roe<br>T = 175°C<br>J<br>|re e r<br>| ee A ee a<br>10 ay (eeYW | | | | |<br>|}so | __| VDS = 10V —<br>60µs PULSE WIDTH<br>P E<br>1<br>pr<br>2.0 4.0 6.0 8.0 10.0<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>)(Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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1000<br>TOP 10V,9.0V +44}TT 4-HTTT]+ HH<br>Sov ELE ETT<br>100<br>PH . geA tetCorytH<br>10<br>| yg<br>AA<br>3.0V<br>7 ea) 60µs PULSE WIDTH |<br>Tj = 175°C<br>1 JAnimaHH|<br>0.10 11 1010 100100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>2.0<br>ID = 30A<br>VGS = 10V<br>LEEEEL<br>1.5 EDy,<br>yyyty LeA<br>|<br>1.0 74| eT<br>LAT<br>0.5 PEELEEEE EEE<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance vs. Temperature 

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10000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = C gs + Cgd,  C ds SHORTED<br>C  = C<br>rss   gd<br>Coss  = Cds + Cgd<br>1000 T ....<br>Ciss<br>Coss<br>100 S Crss O<br>EHH FP<br>10<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance vs.<br>Drain-to-Source Voltage<br>1000.0<br>100.0<br>T = 175°C<br>J<br>10.0<br>1.0<br>TJ = 25°C<br>V = 0V<br>GS<br>Sa<br>0.1<br>0.0 0.5 1.0 1.5 2.0<br>VSD, Source-toDrain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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12<br>ID= 12A V = 20V<br>DS<br>10 VDS= 10V<br>Fe<br>8<br>6<br>4<br>x<br>2<br>0 ZL<br>0 2 4 6 8 10 12<br> QG  Total Gate Charge (nC)<br>Fig 6.   Typical Gate Charge vs.<br>Gate-to-Source Voltage<br>1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100<br>10 100µsec<br>1msec<br>1 10msec<br>Tc = 25°C<br>Tj = 175°C<br>Single Pulse<br>0.1 COLES<br>0 1 10 100<br>VDS  , Drain-toSource Voltage (V)<br>VGS, Gate-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

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40 2.6<br>LIMITED BY PACKAGE<br>2.4<br>30 FEL] A E ID  : = 250µA<br>2.2<br>~ P | PN<br>2.0<br>N S) E RENT<br>20<br>1.8<br>10 S aGaNG 1.6 t ii t}| Nt<br>1.4<br>0 Py TT TR\ SPE LEERGeeeKeERE TT ELLIW<br>1.2<br>25 50 75 100 125 150 175<br>-75 -50 -25 0 25 50 75 100 125 150<br> TC , Case Temperature (°C)<br>TJ , Temperature ( °C )<br>Fig 9.   Maximum Drain Current vs. Fig 10.   Threshold Voltage vs. Temperature<br>Case Temperature<br>10<br>D = 0.50<br>1<br>0.20<br>0.10<br>0.05<br>0.1 0.020.01 τJ τJ R1 R1 R2 R2 R3R3 τCτRi (°C/W)   1.2525      0.00015 τi (sec)<br>τ1τ1 τ2 τ2 τ3τ3 2.423        0.00098<br>Ci= τi/Ri 0.6041      0.00984<br>0.01 Ci i/Ri<br>Notes:<br>SINGLE PULSE 1. Duty Factor D = t1/t2<br>( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthjc + Tc<br>0.001 | PT<br>1E-006 1E-005 0.0001 0.001 0.01<br>t1 , Rectangular Pulse Duration (sec)<br>VGS(th) Gate threshold Voltage (V)<br>ID , Drain Current (A)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>20VVGS<br>tp 0.01Ω<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

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V(BR)DSS<br>tp<br><><br>/<br>val<br>/y Ih<br>IAS 7<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>rr .3µF<br>LL ii Oe| +<br>D.U.T. -VDS<br>VGS<br>3mA<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 13.** Gate Charge Test Circuit 

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140<br>                 I<br>D<br>120 TOP          3.4A<br>               5.4A<br>soo eee BOTTOM   12A<br>100 Nf tf<br>80<br>NEE ET<br>60<br>40 INN EEE<br>20<br>SSS<br>0 | |CSS<br>25 50 75 100 125 150 175<br>Starting TJ, Junction Temperature (°C)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

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LD<br>VDS<br>ao<br>+<br>VDD -<br>(2<br>D.U.T<br>VGS<br>Pulse Width < 1µs<br>Duty Factor < 0.1%<br>oo<br>Fig 14a.   Switching Time Test Circuit<br>V<br>DS<br>90%<br>10%<br>V<br>GS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 14b.** Switching Time Waveforms 

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Driver Gate Drive<br>P.W.<br>D.U.T + {+ P.W. Period ——— + D = —— Period<br>) [©)]    • Circuit Layout Considerations | t V | GS=10V<br> •<br>| =] - LowGround StrayPla I n eductance<br>•   Low Leakage Inductance 2) D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oi - [l] Current Transformer - ® + Current r Current di/dt NN<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘<br>00 +> VDD<br>ma<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( A •   dvidt controlled by Re Vpp - Inductor Curent<br>•   D.U.T. - Device Under Test es ee<br>Isp controlled by Duty Factor "D" ® Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


**Fig 15.** Peak Diode Recovery dv/dt Test Circuit or N-Channel HEXFET ® Power MOSFETs 

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Id<br>Vds f'<br>1 Vgs<br>I<br>1<br>1<br>1<br>1<br>I<br>1<br>|<br>H \<br>Vgs(th) !! \\<br>! \<br>! \<br>H \<br>H \<br>1 H ! ' |<br>><1) o t<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 16.** Gate Charge Waveform 

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## **Power MOSFET Selection for Non-Isolated DC/DC Converters** 

## **Control FET** 

## **Synchronous FET** 

The power loss equation for Q2 is approximated by; 

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This can be expanded and approximated by; 

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*dissipated primarily in Q1. 

For the synchronous MOSFET Q2, Rds(on) is an important characteristic; however, once again the importance of gate charge must not be overlooked since it impacts three critical areas. Under light load the MOSFET must still be turned on and off by the control IC so the gate drive losses become much more significant.  Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that are transfered to Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs’ susceptibility to Cdv/dt turn on. 

The drain of Q2 is connected to the switching node of the converter and therefore sees transitions between ground and Vin. As Q1 turns on and off there is a rate of change of drain voltage dV/dt which is capacitively coupled to the gate of  Q2 and can induce a voltage spike on the gate that is sufficient to turn the MOSFET on, resulting in shoot-through current . The ratio of Q /Q must be minimized to reduce the gd gs1 potential for Cdv/dt turn on. 

Figure A:  Qoss Characteristic 

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EXAMPLE: THIS IS AN IRFR120<br>PART NUMBER<br>WITH ASSEMBLY INTERNATIONAL GN<br>LOT CODE 1234 RECTIFIER IRFU120 DATE CODE<br>ASSEMBLED ON WW 16, 1999 LOGO 916A YEAR 9 =  1999<br>IN THE ASSEMBLY LINE "A" 12 34 WEEK 16<br>oe | LINE A<br>Note: "P" in assembly line position ASSEMBLY e a l<br>indicates "Lead-Free" LOT CODE<br>OR<br>PART NUMBER<br>INTERNATIONAL cS<br>RECTIFIER IRFU120 DATE CODE<br>LOGO TEAR Pyisa P =  DESIGNATES LEAD-FREE<br>12 34 PRODUCT (OPTIONAL)<br>YEAR 9 =  1999<br>ASSEMBLY e a t WEEK 16<br>LOT CODE<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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EXAMPLE: THIS IS AN IRFU120 PART NUMBER<br>INTERNATIONAL<br>WITH ASSEMBLYLOT CODE 5678ASSEMBLED ON WW 19, 1999 RECTIFIERLOGO 56IRFU120919A78 YEAR 9 =  1999DATE CODEWEEK 19<br>IN THE ASSEMBLY LINE "A"<br>ASSEMBLY LINE A<br>Note: position indicates "Lead-Free" "P" in assembly line  LOT CODE<br>ap<br>PART NUMBER<br>INTERNATIONAL cs<br>RECTIFIER IRFU120 DATE CODE<br>LOGO P =  DESIGNATES LEAD-FREE<br>56 78 PRODUCT (OPTIONAL)<br>YEAR 9 =  1999<br>ASSEMBLY WEEK 19<br>LOT CODE A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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TR TRR TRL<br>eooogeoo\ 4 oeoo/4<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>CECE GIO),<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>NOTES :<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).<br>3.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>|   13 INCH<br>16 mm<br>|X hk<br>**----- End of picture text -----**<br>


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Repetitive rating;  pulse width limited by max. junction temperature. @ Starting TJ = 25°C, L = 0.43mH, RG = 25Ω, IAS = 12A. 

Pulse width ≤ 400µs; duty cycle ≤ 2%. 

@ Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 30A. © When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 12/04 

www.irf.com 

11 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



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- [Supplier page](https://es.farnell.com/infineon/irlr3714zpbf/mosfet-n-20v-d-pak/dp/1436991)
---

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