# Power MOSFET, N Channel, 55 V, 42 A, 8000 µohm, TO-252AA, Surface Mount

![Product image](https://novapart.co/image/farnell:2468058/)

**URL**: https://novapart.co/products/IRLR3705ZTRPBF/power-mosfet-n-channel-55-v-42-a-8000-ohm-to-252aa
**SKU**: IRLR3705ZTRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.6380
**Stock**: 1000+
**Lead Time**: 190 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0065ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; P

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 130W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252AA |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 42A |
| Drain Source On State Resistance | 8000µohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2468058/)

PD - 95956A 

## **Features** 

Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free 

## **Description** 

This HEXFET[®] Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design  are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. 

## IRLR3705ZPbF IRLU3705ZPbF 

## HEXFET[®] Power MOSFET 

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D<br>VDSS = 55V<br>R  = 8.0m Ω<br>DS(on)<br>G<br>ID = 42A<br>S<br>**----- End of picture text -----**<br>


||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V(Silicon Limited)|89|A<br>|
|ID@ TC= 100°C|Continuous Drain Current, VGS@ 10V<br>~~PO~~|63<br>~~PO~~||
|ID@ TC= 25°C<br>~~a~~|Continuous Drain Current, VGS@ 10V(Package Limited)<br>~~a~~<br>~~a~~|42<br>~~a~~<br>||
|IDM<br>~~a~~|Pulsed Drain Current<br>~~a~~|360<br>||
|PD@TC= 25°C<br>~~a~~|Power Dissipation<br>~~aGe~~|130<br>~~Ge~~<br>~~G~~|W<br>~~Ge~~|
||Linear Derating Factor<br>~~Ge~~<br>~~a~~|0.88<br>~~Ge~~<br>~~a~~<br>~~G~~|W/°C<br>~~Ge~~<br>~~a~~|
|VGS|Gate-to-Source Voltage<br>~~a~~|± 16<br>~~a~~<br>~~G~~|V<br>~~a~~|
|EAS (Thermally limited)|Single Pulse Avalanche Energy<br>~~PO~~|110<br>~~=~~<br>~~PO~~|mJ<br>~~=~~|
|EAS(Tested)|Single Pulse Avalanche EnergyTested Value<br>~~PO~~<br>~~a~~|190<br>~~=~~<br>~~PO~~<br>~~a~~||
|IAR|Avalanche Current|See Fig.12a, 12b, 15, 16|A|
|EAR|Repetitive Avalanche Energy||mJ|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range<br>~~Ee~~|-55  to + 175<br>~~Ee~~|°C<br>~~Ee~~|
||SolderingTemperature,for 10 seconds<br>~~Ee~~|300 (1.6mm fromcase )<br>~~Ee~~||
||MountingTorque, 6-32or M3 screw<br>~~De~~|10lbf in(1.1N m)<br>~~De~~|~~De~~|



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## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**<br>~~es~~|**Typ.**<br>~~es~~|**Max. **<br>~~Gs~~|**Units**<br>~~Gs~~|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~es~~|55<br>~~es~~<br>~~es~~<br>~~Ge~~|–––<br>~~es~~<br>~~es~~<br>~~ss~~|–––<br>~~es~~<br>~~Gs~~<br>~~ss~~|V<br>~~es~~<br>~~Gs~~|VGS= 0V,ID= 250µA<br>~~es~~|
|∆V(BR)DSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~es~~<br>~~es~~<br>~~Ge~~<br>~~|~~|0.053<br>~~es~~<br>~~es ~~<br>~~es~~<br>~~ss~~<br>~~||~~|–––<br>~~es~~<br> ~~Gs~~<br>~~es~~<br>~~ss~~<br>~~|~~|V/°C<br>~~es~~<br>~~Gs~~<br>~~es~~|Reference to 25°C,ID= 1mA<br>~~es~~<br>~~es~~<br>~~©~~|
|RDS(on)|Static Drain-to-Source On-Resistance|–––<br>~~Ge ~~<br>~~|~~<br>~~|~~|6.5<br> ~~ss~~<br>~~||~~<br>~~||~~|8.0<br>~~ss~~<br>~~|~~<br>~~|~~|mΩ|VGS= 10V,ID= 42A<br>~~©~~<br>~~©~~|
|||–––<br>~~|~~<br>~~|~~<br>~~|~~|–––<br>~~| |~~<br>~~||~~<br>~~||~~|11<br>~~|~~<br>~~|~~<br>~~|~~||VGS= 5.0V,ID= 34A<br>~~©~~<br>~~©~~<br>~~©~~|
|||–––<br>~~|~~<br>~~|~~|–––<br>~~| |~~<br>~~||~~<br>~~Gs~~|12<br>~~|~~<br>~~|~~<br>~~es~~||VGS= 4.5V,ID= 21A<br>~~©~~<br>~~©~~|
|VGS(th)|Gate Threshold Voltage<br>~~ee~~|1.0<br>~~|~~<br>~~ee~~|–––<br>~~| |~~<br>~~ee~~<br>~~Gs~~<br>~~Gn~~|3.0<br>~~|~~<br>~~ee~~<br>~~es~~<br>~~ss~~|V<br>~~ee~~<br>~~ss~~|VDS= VGS,ID= 250µA<br>~~©~~<br>~~ee~~|
|gfs|Forward Transconductance<br>~~ee~~<br>~~I~~|89<br>~~ee~~<br>~~I~~|–––<br>~~ee~~<br>~~Gs~~<br>~~I~~<br>~~Gn~~|–––<br>~~ee~~<br>~~es~~<br>~~I~~<br>~~ss~~<br>~~OE~~|S<br>~~ee~~<br>~~I~~<br>~~ss~~<br>~~OE~~|VDS= 25V,ID= 42A<br>~~ee~~<br>~~I~~<br>~~OE~~|
|IDSS|Drain-to-Source Leakage Current<br>~~Se~~|–––<br>~~Se~~|–––<br>~~Gn ~~<br>~~Se~~|20<br> ~~ss~~<br>~~Se~~<br>~~OE~~|µA<br>~~ss~~<br>~~Se~~<br>~~OE~~|VDS= 55V,VGS= 0V<br>~~Se~~<br>~~OE~~|
|||–––<br>~~Se~~|–––<br>~~Se~~|250<br>~~Se~~<br>~~OE~~||VDS= 55V,VGS= 0V,TJ= 125°C<br>~~Se~~<br>~~OE~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~Se~~<br>~~Se~~<br>~~|~~|–––<br>~~Se~~<br>~~Se~~<br>~~|~~|–––<br>~~Se~~<br>~~Se~~<br>|200<br>~~Se~~<br>~~OE~~<br>~~Se~~<br>|nA<br>~~Se~~<br>~~OE~~<br>~~Se~~|VGS= 16V<br>~~Se~~<br>~~OE~~<br>~~Se~~|
||Gate-to-Source Reverse Leakage<br>~~Se~~<br>~~|~~|–––<br>~~Se~~<br>~~|tT~~<br>~~ee~~|–––<br>~~Se~~<br>~~tT~~<br>~~ee~~|-200<br>~~Se~~<br>~~tT~~||VGS= -16V<br>~~Se~~|
|Qg|Total Gate Charge<br>~~Se~~<br>~~|~~<br>~~ee~~<br>~~es~~|–––<br>~~Se~~<br>~~|tT~~<br>~~ee~~<br>~~ee~~<br>~~**ee**~~|44<br>~~Se~~<br>~~tT~~<br>~~ee~~<br>~~ee~~<br>~~**e**s~~|66<br>~~Se~~<br>~~tT~~<br>~~ee~~|nC<br>~~Se~~|VDS= 44V<br>ID= 42A<br>VGS= 5.0V<br>~~Se~~<br>~~©)~~|
|Qgs|Gate-to-Source Charge<br>~~ee~~<br>~~es~~|–––<br>~~ee ~~<br>~~ee~~<br>~~**ee**~~|13<br> ~~ee~~<br>~~ee~~<br>~~**e**s~~<br>~~e~~|–––<br>~~ee~~|||
|Qgd|Gate-to-Drain("Miller")Charge<br>~~es~~|–––<br>~~**ee**~~<br>~~ee~~|22<br>~~**e**s~~<br>~~e~~<br>~~es~~|–––|||
|td(on)|Turn-On DelayTime<br>~~es~~<br>~~ee~~|–––<br>~~**ee** ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|17<br> ~~**e**s~~<br>~~e~~<br>~~ee~~<br>~~es~~<br>~~ee~~|–––<br>~~ee~~|ns|VGS= 5.0V<br>VDD= 28V<br>ID= 42A<br>RG= 4.2Ω<br>~~©)~~<br>)|
|tr|Rise Time<br>~~es~~|–––<br>~~ee ~~<br>~~es~~<br>~~ee~~<br>~~ee~~|150<br> ~~es~~<br>~~es~~<br>~~ee~~<br>~~es~~|–––<br>~~es~~|||
|td(off)|Turn-Off DelayTime<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~|33<br> ~~ee~~<br>~~ee~~<br>~~es~~|–––<br>~~ee~~|||
|tf|Fall Time<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~|70<br> ~~es~~<br>~~ee~~|–––<br>~~ee~~|||
|LD|Internal Drain Inductance<br>~~ee~~<br>~~HH~~|–––<br>~~ee~~<br>~~HH~~|4.5<br>~~ee~~<br>~~HH~~|–––<br>~~ee~~<br>~~HH~~|nH<br>~~HH~~|S<br>D<br>G<br>Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>)<br>~~&~~|
|LS|Internal Source Inductance<br>~~ee~~<br>~~HH~~|–––<br>~~ee~~<br>~~HH~~<br>~~ee~~|7.5<br>~~ee~~<br>~~HH~~<br>~~es~~|–––<br>~~ee~~<br>~~HH~~|||
|Ciss|Input Capacitance<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|2900<br>~~ee~~<br>~~es~~<br>~~ee~~|–––<br>~~ee~~|pF|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz|
|Coss|Output Capacitance<br>~~es~~|–––<br>~~ee ~~<br>~~es~~<br>~~ee~~<br>~~ee~~|420<br> ~~es~~<br>~~es~~<br>~~ee~~|–––<br>~~es~~|||
|Crss|Reverse Transfer Capacitance<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|230<br> ~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|||
|Coss|Output Capacitance<br>~~es~~<br>~~ee~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~**ee**~~|1550<br>~~es~~<br>~~ee~~<br>~~**es**~~|–––<br>~~es~~||VGS= 0V,VDS= 1.0V, ƒ= 1.0MHz|
|Coss|Output Capacitance<br>~~ee~~<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~**ee**~~|320<br> ~~ee~~<br>~~ee~~<br>~~**es**~~|–––<br>~~ee~~||VGS= 0V,VDS= 44V, ƒ= 1.0MHz<br>~~@~~|
|Cosseff.|Effective Output Capacitance<br>~~ee~~|–––<br>~~**ee**~~|500<br>~~**es**~~|–––||VGS= 0V,VDS= 0V to 44V<br>~~@~~|



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1000<br>VGS<br>TOP           12V<br>10V<br>8.0V<br>5.0V<br>a aes 4.5V<br>3.5V<br>100 3.0V<br>BOTTOM 2.8V<br>10<br>2.8V<br>≤  60µs PULSE WIDTH<br>1 Seintt Tj = 25°C TTT ||<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br>1000.0 SSS SS TJ = 25°C SS eS<br>T = 175°C<br>5oEe se=-- J<br>100.0<br>-— HASan  + — cenee<br>t+ ff |} J<br>rt A et _<br>10.0<br>pvp | tt | |<br>PH<br>VDS = 15V<br>≤  60µs PULSE WIDTH<br>Se<br>1.0<br>aie<br>1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>) (Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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1000<br>VGS<br>TOP           12V<br>10V<br>8.0V<br>5.0V<br>4.5V pr aatieat<br>3.5V<br>100 3.0V<br>BOTTOM 2.8V<br>2.8V<br>10<br>≤  60µs PULSE WIDTH<br>Tj = 175°C<br>1 nie tt TTT | |<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>100 = TJ = 25°C  —=—<br>80<br>OED? ee n<br>60 O/| c L ——<br>TJ = 175°C<br>/ Ca<br>4<br>40<br>a<br>Vanna<br>20<br>VDS = 8.0V<br>380µs PULSE WIDTH<br>ALESSEEE<br>0<br>0 10 20 30 40 50 60 70 80<br>ID, Drain-to-Source Current (A)<br>Gfs, Forward Transconductance (S)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 4.** Typical Forward Transconductance vs. Drain Current 

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5000 12<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = Cgs + Cgd,  Cds SHORTED<br>4000 Crss   = Cgd  10<br>Coss  = Cds + Cgd<br>8<br>3000 Ciss<br>6<br>a alll<br>2000<br>4<br>1000 2<br>/—~Suta Coss il a<br>Crss<br>0<br>0 ee ell ee<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance vs.<br>Drain-to-Source Voltage<br>1000.0 10000<br>1000<br>100.0<br>T = 175°C<br>J<br>100<br>10.0<br>10<br>T = 25°C<br>J<br>1.0<br>1<br>VGS = 0V<br>0.1 0.1<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>C, Capacitance (pF)<br>ID,  Drain-to-Source Current (A)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


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12<br>I = 42A<br>D<br>10 VDS= 44V<br>VDS= 28V<br>VDS= 11V<br>8<br>6<br>Je<br>4<br>2<br> az<br>0<br>0 20 40 60 80 100<br> QG  Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

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10000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>1000<br>100<br>100µ sec<br>10 1msec<br>10msec<br>1<br>Tc = 25°C<br>Tj = 175°C<br>Single Pulse DC<br>0.1<br>1 10 100<br>VDS  , Drain-toSource Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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100 2.5<br>LIMITED BY PACKAGE ID = 42A<br>VGS = 10V<br>80<br>A) |  OE 2.0<br>ee tei<br>60<br>ee ee ey<br>1.5<br>40 Pe!a | CLEEEEEEEee<br>PLE 1.0 SERRRESC Anne<br>20<br>NT EEE<br>PTET<br>0<br>0.5<br>25 50 75 100 125 IN 150 175 = FPET EETREETEEET<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br> TC , Case Temperature (°C)<br>TJ , Junction Temperature (°C)<br>Fig 9.   Maximum Drain Current vs. Fig 10.   Normalized On-Resistance<br>Case Temperature vs. Temperature<br>10<br>1<br>D = 0.50<br>0.20<br>0.1 e 0.10 e R1 R1 R2 R2 Sy Ri (°C/W)     τ i (sec)<br>0.05 τ J τ J τ C τ 0.6984     0.000465<br>0.02 τ 1 τ 1 τ 2 τ 2 0.4415     0.004358<br>0.01<br>Ci=  τ i / Ri<br>0.01 = Soe TT Ci i / Ri |<br>Notes:<br>SINGLE PULSE 1. Duty Factor D = t1/t2<br>( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthjc + Tc<br>0.001 “ann nr<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>ID , Drain Current (A)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>20VVGS<br>tp 0.01 Ω<br>A ,<br>Fig 12a.   Unclamped Inductive Test Circuit<br>V(BR)DSS<br>tp<br>/<br>|<br>IAS 7;<br>Fig 12b.   Unclamped Inductive Waveforms<br>QG<br>10V. [2]<br>QGS QGD<br>VG<br>Charge<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

**Fig 13a.** Basic Gate Charge Waveform 

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L<br>VCC<br>DUT<br>0 A. |<br>1K<br>**----- End of picture text -----**<br>


**Fig 13b.** Gate Charge Test Circuit 6 

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500<br>                 I D<br>TOP          5.3A<br>400                 7.0A<br>BOTTOM   42A<br>Ni<br>300<br>200<br>ACER<br>100 SSS<br>0<br>25 50 75 100 125 150 175<br>Starting TJ, Junction Temperature (°C)<br>SSCP<br>Fig 12c.   Maximum Avalanche Energy<br>vs. Drain Current<br>2.5<br>ID = 250µA<br>ID = 150µA<br>2.0<br>FOlnnE ID = 50µA<br>1.5<br>1.0<br>PEEASNGE<br>0.5 LLL EES<br>0.0 LLL EEEN<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>EAS, Single Pulse Avalanche Energy (mJ)<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 14.** Threshold Voltage vs. Temperature 

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1000<br>Duty Cycle = Single Pulse<br>100 Allowed avalanche Current vs<br>avalanche  pulsewidth,  tav<br>0.01<br>assuming  ∆ Tj = 25°C due to<br>avalanche losses. Note: In no<br>10 0.05 case should Tj be allowed to<br>0.10 exceed Tjmax<br>1<br>0.1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 15.   Typical Avalanche Current vs.Pulsewidth<br>120 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>TOP          Single Pulse                 (For further info, see AN-1005 at www.irf.com)<br>BOTTOM   1% Duty Cycle 1. Avalanche failures assumption:<br>100 I D  = 42A   Purely a thermal phenomenon and failure occurs at a<br>qT     temperature far in excess of Tjmax. This is validated for<br>    every part type.<br>80<br>2. Safe operation in Avalanche is allowed as long asTjmax is<br>Soro   not exceeded.<br>60 3. Equation below based on circuit and waveforms shown in<br>  Figures 12a, 12b.<br>LINN EEE EL<br>4. PD (ave) = Average power dissipation per single<br>40     avalanche pulse.<br>LUNE 5. BV = Rated breakdown voltage (1.3 factor accounts for<br>    voltage increase during avalanche).<br>20 6. Iav = Allowable avalanche current.<br>PLEASE 7.  ∆ T = Allowable rise in junction temperature, not to exceed<br>it ELL EIN.     Tjmax (assumed as 25°C in Figure 15, 16).<br>0   tav = Average time in avalanche.<br>25 50 75 100 125 150 175   D = Duty cycle in avalanche =  tav ·f<br>Starting TJ , Junction Temperature (°C)   ZthJC(D, tav) = Transient thermal resistance, see figure 11)<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 16.** Maximum Avalanche Energy vs. Temperature 

**PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2 T/ [1.3·BV·Zth]** 

- **EAS (AR) = PD (ave)·tav** 

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Driver Gate Drive<br>P.W.<br>D.U.T + {¢$ P.W. Period —— | D = —— Period<br>) [©)]    •  Circuit Layout Considerations | t V i GS=10V<br>| — -  •   GroundLow StrayPlane Inductance<br> •   CurrentLow LeakageTransformerInductance @ D.U.T. ISD Waveform<br>+<br>= ReverseRecovery Body Diode Forward \<br>- a - ® + Current r Current di/dt 7<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘ ’<br>00 - VDD<br>ay<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( a •   dvidt controlledIsp controlled bybyDuty Re Factor "D" Vop - ® Inductor Curent<br>•<br>D.U.T. - Device Under Test Ripple  ≤ 5% e s ISD ee<br>**----- End of picture text -----**<br>


## **Fig 17.** Peak Diode Recovery dv/dt Test HEXFET ® Power MOSFETs 

## for N-Channel 

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-<br>≤ 1  ys<br>≤ 0.1 %<br>**----- End of picture text -----**<br>


**Fig 18a.** Switching Time Test Circuit 

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VDS<br>90%<br>10%<br>VGS | |<br>lee >! able<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 18b.** Switching Time Waveforms 

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EXAMPLE: THIS IS AN IRFR120<br>WITH ASSEMBLYLOT CODE 1234 INTERNATIONALRECTIFIER cg IRFR120 N PART NUMBERDATE CODE<br>ASSEMBLED ON WW 16, 2001 LOGO 116A YEAR 1 =  2001<br>IN THE ASSEMBLY LINE "A" 12 34 WEEK 16<br>LINE A<br>Note: "P" in assembly line positionindicates "Lead-Free" ASSEMBLYLOT CODE i a t<br>"P" in assembly line position indicates<br>"Lead-Free" qualification to the consumer-level<br>PART NUMBER<br>INTERNATIONAL gO<br>OR RECTIFIER IRFR120 P =  DESIGNATES LEAD-FREEDATE CODE<br>LOGO PRODUCT (OPTIONAL)<br>12 34 P =  DESIGNATES LEAD-FREE<br>ASSEMBLYLOT CODE UY PRODUCT QUALIFIED TO THECONSUMER LEVEL (OPTIONAL)<br>YEAR 1 =  2001<br>WEEK 16<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


## **Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** www.irf.com 

9 

**==> picture [239 x 129] intentionally omitted <==**

**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRFU120 PART NUMBER<br>WITH ASSEMBLYLOT CODE 5678ASSEMBLED ON WW 19, 2001 INTERNATIONALRECTIFIERLOGO gE 56IRFU120119A78 DATE CODEYEAR 1 =  2001WEEK 19<br>IN THE ASSEMBLY LINE "A"<br>LINE A<br>ASSEMBLY<br>LOT CODE<br>Note: "P" in assembly line position<br>indicates Lead-Free"<br>OR<br>PART NUMBER<br>INTERNATIONAL cE<br>RECTIFIER IRFU120 DATE CODE<br>LOGO P =  DESIGNATES LEAD-FREE<br>56 78 PRODUCT (OPTIONAL)<br>ASSEMBLY YEAR 1 =  2001<br>LOT CODE WEEK 19<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


## **Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 10 

www.irf.com 

**==> picture [240 x 206] intentionally omitted <==**

**----- Start of picture text -----**<br>
TR TRR TRL<br>Sooo Go) I Sooo 4<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>7 7<br>12.1 ( .476 )11.9 ( .469 ) FEED DIRECTION 8.1 ( .318 )7.9 ( .312 ) FEED DIRECTION<br>NOTES :<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).<br>3.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>  13 INCH<br>| :<br>16 mm<br>mN ae<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
NOTES :<br>1. OUTLINE CONFORMS TO EIA-481.<br>**----- End of picture text -----**<br>


Coss eff. is a fixed capacitance that gives the same charging time 

Repetitive rating;  pulse width limited by 

as Coss while VDS is rising from 0 to 80% VDSS .oss while VDS is rising from 0 to 80% VDSS .while VDS is rising from 0 to 80% VDSS .DS is rising from 0 to 80% VDSS .is rising from 0 to 80% VDSS .DSS . . 

max. junction temperature. (See fig. 11). as Coss while VDS is rising from 0 to 80% VDSS .oss while VDS is rising from 0 to 80% VDSS .while VDS is rising from 0 to 80% VDSS .DS is rising from 0 to 80% VDSS .is rising from 0 to 80% VDSS .DSS . . ) Limited by TJmax, starting TJ = 25°C, L = 0.12mH ® Limited by TJmaxJmax , see Fig.12a, 12b, 15, 16 for typical repetitive RG = 25 Ω , IAS = 42A, VGS =10V. Part not avalanche performance. 

® Limited by TJmaxJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. 

- recommended for use above this value. © his value determined from sample failure population. 100% ® Pulse width ≤ 1.0ms; duty cycle ≤ 2%. tested to this value in production. 

® Pulse width ≤ 1.0ms; duty cycle ≤ 2%. tested to this value in production. @ 

- @ When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994 

θ 

Data and specifications subject to change without notice. This product has been designed  for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 10/2010 

www.irf.com 

11 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRLR3705ZTRPBF/power-mosfet-n-channel-55-v-42-a-8000-ohm-to-252aa)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irlr3705ztrpbf/mosfet-n-ch-55v-42a-to-252aa-3/dp/2468058)
---

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