# Power MOSFET, N Channel, 100 V, 42 A, 0.014 ohm, TO-252AA, Surface Mount

![Product image](https://novapart.co/image/farnell:3155164/)

**URL**: https://novapart.co/products/IRLR3110ZTRLPBF/power-mosfet-n-channel-100-v-42-a-0014-ohm-to
**SKU**: IRLR3110ZTRLPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.6260
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.011ohm; R; Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 140W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252AA |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 42A |
| Drain Source On State Resistance | 0.014ohm |
| Gate Source Threshold Voltage Max | 2.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3155164/)

PD - 97175B 

## IRLR3110ZPbF IRLU3110ZPbF 

## **Features** 

Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax 

## **Description** 

Specifically designed for Industrial applications, this HEXFET[®] Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.  Additional features of this design  are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Industrial applications and a wide variety of other applications. 

## HEXFET[®] Power MOSFET 

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D<br>VDSS = 100V<br>G R  = 14m Ω<br>DS(on)<br>S<br>**----- End of picture text -----**<br>


D-Pak I-Pak IRLR3110ZPbF IRLU3110ZPbF 

## **Absolute Maximum Ratings** 

||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|ID@ TC= 25°C<br>~~Pe~~|Continuous Drain Current,VGS@ 10V(Silicon Limited)<br>~~Pe~~|63<br>|A<br>~~a~~|
|ID@ TC= 100°C <br>~~Pe~~|Continuous Drain Current,VGS@ 10V(Silicon Limited)<br>~~Pe~~|45<br>||
|ID@ TC= 25°C<br>~~Pe~~<br>~~©~~|Continuous Drain Current,VGS@ 10V(Package Limited)<br>~~Pea~~<br>~~©~~|42<br>~~a~~<br>~~©~~||
|IDM<br>~~©~~|Pulsed DrainCurrent<br>~~©~~|250<br>~~©~~<br>~~Q~~||
|PD@TC= 25°C<br>~~©~~|Power Dissipation<br>~~©~~<br>~~a~~|140<br>~~©~~<br>~~a~~<br>~~Q~~|W<br>~~a~~|
|~~a~~|Linear DeratingFactor<br>~~a~~<br>~~a~~|0.95<br>~~Q~~<br>~~a~~<br>~~ee~~|W/°C<br>~~a~~|
|VGS<br>~~a~~|Gate-to-Source Voltage<br>~~a~~<br>~~a~~<br>~~a~~<br>~~~~~<br>~~eo~~|±16<br>~~a~~<br>~~a~~<br>~~ee~~<br>~~eo~~<br>~~ese~~|V<br>~~a~~<br>~~a~~<br>~~e~~|
|EAS (Thermally limited)<br>~~a~~|Single Pulse Avalanche Energy<br>~~a~~<br>~~a~~<br>~~~~~<br>~~eo~~|110<br>~~a~~<br>~~ee~~<br>~~eo~~<br>~~ese~~|mJ<br>~~a~~<br>~~e~~|
|EAS(Tested )<br>~~a~~<br>~~a~~|Single Pulse Avalanche EnergyTested Value<br>~~a~~<br>~~~~~<br>~~eo~~<br>~~aes~~|140<br>~~ee~~<br>~~eo~~<br>~~ese~~<br>~~A~~||
|IAR<br>~~a~~|AvalancheCurrent<br>~~eo~~<br>~~aes~~|See Fig.12a, 12b, 15, 16<br>~~eo~~<br>~~ese~~<br>~~A~~|A<br>~~e~~|
|EAR<br>~~a~~|Repetitive Avalanche Energy<br>~~aes~~||mJ|
|TJ<br>TSTG<br>|Operating Junction and<br>Storage Temperature Range<br>~~es~~<br>~~po~~|-55  to + 175<br>~~A~~<br>~~po~~|°C<br>~~po~~|
||ReflowSolderingTemperature,for 10seconds<br>~~po~~|300<br>~~po~~||
||MountingTorque,6-32 or M3 screw<br>~~po~~<br>~~Qe~~|10 lbf in (1.1N m)<br>~~po~~<br>~~Qe~~|~~po~~<br>~~Qe~~|



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## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**<br>~~GO~~|**Typ.**<br>~~GO~~|**Max. **<br>~~GO~~|**Units**<br>~~GOGO~~|**Conditions**<br>~~GOGO~~|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~RD~~|100<br>~~RD~~<br>~~GO~~|–––<br>~~RD~~<br>~~GO~~|–––<br>~~RD~~<br>~~GO~~|V<br>~~RD~~<br>~~GOGO~~|VGS= 0V, ID= 250µA<br>~~RD~~<br>~~GOGO~~|
|∆V(BR)DSS/∆TJ|Breakdown Voltage Temp. Coefficient|–––<br>~~GO~~|0.077<br>~~GO~~|–––<br>~~GO ~~|V/°C<br> ~~GOGO~~|Reference to 25°C, ID= 1mA<br>~~GOGO~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~ee~~|–––<br>~~ee~~|11<br>~~PT~~<br>~~ee~~|14<br>~~PT~~<br>~~ee~~|mΩ<br>~~ee~~<br>~~GOGO~~|VGS= 10V, ID= 38A<br>©<br>~~ee~~|
|||–––<br>~~ee~~<br>~~G~~|12<br>~~ee~~<br>~~G~~|16<br>~~ee~~||VGS= 4.5V, ID= 32A<br>~~ee~~<br>~~GOGO~~|
|VGS(th)|Gate Threshold Voltage<br>~~ee~~<br>~~R~~|1.0<br>~~ee~~<br>~~R~~<br>~~G~~|–––<br>~~ee~~<br>~~R~~~~**D**~~<br>~~G~~|2.5<br>~~ee~~<br>~~**D**~~|V<br>~~ee~~<br>~~**D**~~<br>~~GOGO~~|VDS= VGS, ID= 100µA<br>~~ee~~<br>~~**D**~~<br>~~GOGO~~|
|gfs|Forward Transconductance<br>~~a~~|52<br>~~G~~|–––<br>~~G~~|–––<br>~~EE~~|S<br>~~GOGO~~<br>~~EE~~|VDS= 25V, ID= 38A<br>~~GOGO~~<br>~~EE~~|
|IDSS|Drain-to-Source Leakage Current<br>~~Be~~<br>~~a~~|–––<br>~~Be~~|–––<br>~~PT~~<br>~~Be~~|20<br>~~PT~~<br>~~Be~~<br>~~EE~~|µA<br>~~Be~~<br>~~EE~~|VDS= 100V, VGS= 0V<br>~~Be~~<br>~~EE~~|
|||–––<br>~~Be~~|–––<br>~~Be~~|250<br>~~Be~~<br>~~EE~~||VDS= 100V, VGS= 0V, TJ= 125°C<br>~~Be~~<br>~~EE~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~Be~~<br>~~a~~|–––<br>~~Be~~<br>~~a~~|–––<br>~~Be~~<br>~~ee~~|200<br>~~Be~~<br>~~EE~~|nA<br>~~Be~~<br>~~EE~~|VGS= 16V<br>~~Be~~<br>~~EE~~|
||Gate-to-Source Reverse Leakage<br>~~a~~|–––<br>~~a~~|–––<br>~~ee~~|-200<br>~~EE~~||VGS= -16V<br>~~EE~~|
|Qg|Total Gate Charge<br>~~ee~~|–––<br>~~a~~<br>~~ee~~|34<br>~~ee~~<br>~~ee~~|48<br>~~ee~~|nC|VDS= 50V<br>ID= 38A<br>VGS= 4.5V<br>~~©~~|
|Qgs|Gate-to-Source Charge<br>~~en~~<br>~~ee~~|–––<br>~~en~~|10<br>~~en~~|–––<br>~~en~~|||
|Qgd|Gate-to-Drain("Miller")Charge<br>~~ee~~|–––|15|–––|||
|td(on)|Turn-On DelayTime<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|24<br>~~ee~~|–––<br>~~ee~~|ns<br>~~|~~|VGS= 4.5V<br>VDD= 50V<br>ID= 38A<br>RG= 3.7Ω<br>~~©~~<br>~~©~~<br>~~|~~|
|tr|Rise Time<br>~~ee~~|–––<br>~~ee~~|110<br>~~ee~~|–––<br>~~ee~~|||
|td(off)|Turn-Off DelayTime<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|33<br>~~ee~~|–––<br>~~ee~~|||
|tf|Fall Time<br>~~ee~~|–––<br>~~+7~~|48<br>~~+7~~|–––<br>~~+7 |~~|||
|LD|Internal Drain Inductance<br>~~ee~~<br>~~——~~|–––<br>~~——~~<br>~~+7~~|4.5<br>~~——~~<br>~~+7~~|–––<br>~~——~~<br>~~+7 |~~|nH<br>~~——~~<br>~~|~~|S<br>D<br>G<br>Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>~~©~~<br>~~——~~<br>~~|~~|
|LS|Internal Source Inductance<br>~~——~~|–––<br>~~——~~<br>~~+7~~|7.5<br>~~——~~<br>~~+7~~|–––<br>~~——~~<br>~~+7 |~~|||
|Ciss|Input Capacitance<br>~~——~~<br>~~es~~|–––<br>~~——~~<br>~~+7~~<br>~~es~~|3980<br>~~——~~<br>~~+7~~<br>~~es~~|–––<br>~~——~~<br>~~+7 |~~<br>~~es~~|pF<br>~~——~~<br>~~|~~|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz<br>~~——~~<br>~~|~~|
|Coss|Output Capacitance<br>~~ee~~|–––<br>~~+7~~<br>~~ee~~|310<br>~~+7~~<br>~~ee~~|–––<br>~~+7 |~~<br>~~ee~~|||
|Crss|Reverse Transfer Capacitance<br>~~ee~~|–––<br>~~ee~~|130<br>~~ee~~|–––<br>~~ee~~|||
|Coss|Output Capacitance<br>~~ee~~|–––<br>~~ee~~|1820<br>~~ee~~|–––<br>~~ee~~||VGS= 0V,  VDS= 1.0V,ƒ= 1.0MHz|
|Coss<br>~~a~~|Output Capacitance<br>~~ee~~<br>~~a~~|–––<br>~~ee~~|170<br>~~ee~~|–––<br>~~ee~~||VGS= 0V,  VDS= 80V,ƒ= 1.0MHz<br>~~@~~|
|Cosseff.<br>~~a~~|Effective Output Capacitance<br>~~a~~|–––|320|–––||VGS= 0V, VDS= 0V to 80V<br>~~@~~|



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1000<br>VGS<br>TOP           15V<br>10V<br>100 r T 8.0V4.5V<br>3.5V<br>3.0V<br>2.7V<br>10 Z a ee BOTTOM 2.5V<br>=<br>eee ts eee cee ie<br>1<br>M D<br>poo Pe ee<br>0.1<br>2.5V<br>≤ 60µs PULSE WIDTH<br>Tj = 25°C<br>0.01 Sa a+<br>0.1 1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br>1000<br>Py<br>100 TJ = 175°C<br>HS<br>10 PH<br>o e<br>| es ee ee ee ee ee eee<br>1 TJ = 25°C<br>2 e ee<br>=a VDS = 25V<br>≤ 60µs PULSE WIDTH<br>Ae, aint<br>0.1<br>0 2 4 6 8 10 12 14 16<br>VGS, Gate-to-Source Voltage (V)<br>) (Α<br>ID, Drain-to-Source Current<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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1000<br>VGS<br>TOP           15V<br>10V<br>8.0V<br>AE 4.5V<br>3.5V<br>3.0V<br>100 2.7V<br>a BOTTOM 2.5V<br>Seem 4M en<br>Se GLTLUEMAIil<br>10 | yr<br>2.5V<br>> {i eg et ee<br>≤ 60µs PULSE WIDTH<br>Tj = 175°C<br>1 TUN ETH<br>0.1 1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 2.** Typical Output Characteristics 

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150<br>TJ = 25°C<br>125<br>|<br>fe<br>10075 [Of TJ = 175°C<br>:<br>5025 S f / VDS = 10V<br>300µs PULSE WIDTH<br>G Y<br>0<br>0 25 50 75<br>ID,Drain-to-Source Current (A)<br>Gfs, Forward Transconductance (S)<br>**----- End of picture text -----**<br>


**Fig 4.** Typical Forward Transconductance vs. Drain Current 

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100000 5.0<br>VCGS  iss   = C = 0V,       f = 1 MHZgs + Cgd,  C ds SHORTED ID= 38A<br>C  = C<br>rss   gd  4.0<br>10000 SE Coss   = Cds + Cgd ef ee ea VDS= 80V | V/<br>C VDS= 50V<br>iss<br>3.0<br>SS Sa — |Y<br>1000<br>C<br>oss<br>e ee EN 2.0 w a |<br>a Crss a ee Sl<br>100<br>1.0<br>ee ee<br>10 0.0<br>1 10 100 0 10 20 30 40<br>VDS, Drain-to-Source Voltage (V)  QG  Total Gate Charge (nC)<br>Fig 5.   Typical Capacitance vs. Fig 6.   Typical Gate Charge vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>1000 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>T = 175°C<br>100 | | J  IA7Z | | Pt A<br>S aas 4a = 100 ETA 100µsec A |<br>TJ = 25°C 1 m sec<br>10 i— ——— oe eee ee ilA ol<br>10msec<br>ee) ee ——— 10 a ll<br>ae al DC oe lt|<br>1<br>Tc = 25°C<br>ei VGS = 0V Tj = 175°CSingle Pulse }<br>ee o n TE C o<br>0.1 1<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 1 10 100 1000<br>VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)<br>C, Capacitance(pF)<br>VGS, Gate-to-Source Voltage (V)<br>ISD, Reverse Drain Current (A) ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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70 3.0<br>ID = 63A<br>60 T T Limited By Package VGS = 10V TH<br>2.5<br>50 P Rx sk SeReuara/<br>An e 2.0 P ETE<br>40<br>Pe A<br>30<br>: 1.5 P T LET LIL<br>NCE} E RED<br>20 Pt tT | IAL C eALLL<br>1.0<br>C OON] A e<br>10 EN PECL ELELLLLU<br>0 PP \ 0.5 ERP ZEReeeeee<br>25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100120140160180<br> TC , Case Temperature (°C) TJ , Junction Temperature (°C)<br>Fig 9.   Maximum Drain Current vs. Fig 10.   Normalized On-Resistance<br>Case Temperature vs. Temperature<br>10<br>1 p t|<br>D = 0.50<br>0.20 rr<br>0.1 0.10 oe R1 R1 R2 R2 nT Ri (°C/W)     τ i (sec)<br>—S 0.020.05 S τ J τ ee J τ 1 τ 1 τ 2 τ 2 τ C τ 0.383       0.0002670.667       0.003916 LEFt<br>0.01 et 0.01 Ci=  τ i / Ri<br>Ci i / Ri<br>SINGLE PULSE Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>A ee 2. Peak Tj = P dm x Zthjc + Tc Hl<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>ID,  Drain Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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300<br>15V<br>ID<br>TOP         4.4A<br>250<br>VDS L DRIVER 6.5A<br>BOTTOM 38A<br>M E<br>200<br>RG D.U.T +<br>- [V][DD]<br>IAS A 150<br>vol 20VVGS l NB NSREREN ELL<br>tp 0.01 Ω<br>100<br> Unclamped Inductive Test Circuit C SS<br>V(BR)DSS(BR)DSS<br>50<br>_ tp T RS<br>0<br>; 25 ELLE 50 75 100 ESMAL 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>AS<br>Fig 12c.   Maximum Avalanche Energy<br> Unclamped Inductive Waveforms<br>vs. Drain Current<br>QG<br>10 V [n] [n,]<br>QGS QGD 3.0<br>a T OTTI<br>VG / 2.5 P PE CRECTTTTEE<br>2.0 P RP RE<br>Charge<br>> C ASSES<br> Basic Gate Charge Waveform 1.5<br>ID = 100µA<br>ID = 250µA ZanNNe<br>1.0 IIDD  = 1.0mA= 1.0A NN<br>L 0.5 | APESSRSEEN<br>DUT | VCC PERE EEE EE<br>0.0<br>1K -75 -50 -25 0 25 50 75 100 125 150 175 200<br>TJ , Temperature ( °C )<br>ned es<br>EAS , Single Pulse Avalanche Energy (mJ)<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit V(BR)DSS(BR)DSS _ tp ; IAS 

**Fig 12b.** Unclamped Inductive Waveforms 

**Fig 13a.** Basic Gate Charge Waveform 

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L<br>DUT | VCC<br>0<br>1K<br>ned<br>Fig 13b.   Gate Charge Test Circuit<br>6<br>**----- End of picture text -----**<br>


**Fig 14.** Threshold Voltage vs. Temperature 

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100<br>Allowed avalanche Current vs avalanche<br>SSS Duty Cycle = Single Pulse Seer a on ee eeeeeeee|<br>pulsewidth, tav, assuming  ∆ Tj = 150°C and<br>—<br>0.01 Seah ees Tstart =25°C (Single Pulse)<br>10<br>FE 0.050.10 4 S HR<br>e e an: | |<br>PAZ 77SN<br>Allowed avalanche Current vs avalanche<br>1<br>pulsewidth, tav, assuming  ∆Τ j = 25°C and<br>Tstart = 150°C.<br>= seey eer<br>| Dee ee ee eee<br>PT Te<br>PTE EEEE<br>0.1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 15.   Typical Avalanche Current vs.Pulsewidth<br>150 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>TOP          Single Pulse                 (For further info, see AN-1005 at www.irf.com)<br>BOTTOM   1% Duty Cycle 1. Avalanche failures assumption:<br>125 ID = 38A   Purely a thermal phenomenon and failure occurs at a<br>    temperature far in excess of Tjmax. This is validated for<br>    every part type.<br>100 2. Safe operation in Avalanche is allowed as long as<br>  neither Tjmax nor Iav (max) is exceeded.<br>N N 3. Equation below based on circuit and waveforms shown in<br>75<br>  Figures 12a, 12b.<br>> Ne NQ 4. PD (ave) = Average power dissipation per single<br>    avalanche pulse.<br>50<br>5. BV = Rated breakdown voltage (1.3 factor accounts for<br>L IN NET<br>    voltage increase during avalanche).<br>25 6. Iav = Allowable avalanche current.<br>7.  ∆ T = Allowable rise in junction temperature, not to exceed<br>C OPS     Tjmax (assumed as 25°C in Figure 15, 16).<br>0 ELEY ANN   tav = Average time in avalanche.<br>25 50 75 100 125 150 175   D = Duty cycle in avalanche =  tav ·f<br>  ZthJC(D, tav) = Transient thermal resistance, see figure 11)<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 16.** Maximum Avalanche Energy vs. Temperature 

**PD (ave) = 1/2 ( 1.3·BV·Iav) =** A **T/ ZthJC Iav = 2** A **T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav** 

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Driver Gate Drive<br>P.W.<br>D.U.T + {¢$ P.W. Period —— | D = —— Period<br>) [©)]    •  Circuit Layout Considerations | t V i GS=10V<br>| — -  •   GroundLow StrayPlane Inductance<br> •   CurrentLow LeakageTransformerInductance @ D.U.T. ISD Waveform<br>+<br>= ReverseRecovery Body Diode Forward \<br>- a - ® + Current r Current di/dt 7<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘ ’<br>00 - VDD<br>ay<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( a •   dvidt controlledIsp controlled bybyDuty Re Factor "D" Vop - ® Inductor Curent<br>•<br>D.U.T. - Device Under Test Ripple  ≤ 5% e s ISD ee<br>**----- End of picture text -----**<br>


## **Fig 17.** Peak Diode Recovery dv/dt Test HEXFET ® Power MOSFETs 

## for N-Channel 

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**Fig 18a.** Switching Time Test Circuit 

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VDS<br>90%<br>10%<br>VGS | |<br>lee >! able<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 18b.** Switching Time Waveforms 

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TR TRR TRL<br>eeooo¢oo\ | oeoo/|<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>- -<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>NOTES :<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>**----- End of picture text -----**<br>


2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 

3.  OUTLINE CONFORMS TO EIA-481 & EIA-541. 

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  13 INCH<br>**----- End of picture text -----**<br>


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16 mm<br>**----- End of picture text -----**<br>


NOTES : 

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1. OUTLINE CONFORMS TO EIA-481.<br>**----- End of picture text -----**<br>


Notes: ® Repetitive rating;  pulse width limited by © Limited by TJmaxJmax , see Fig.12a, 12b, 15, 16 for typical repetitive max. junction temperature. (See fig. 11). 

© Limited by TJmaxJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. 

) Limited by TJmax, starting TJ = 25°C, L = 0.16mH © RG = 25 Ω , IAS = 38A, VGS =10V. Part not recommended for use above this value. @ ® Pulse width ≤ 1.0ms; duty cycle ≤ 2%. iC) Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . 

This value determined from sample failure population. 100% tested to this value in production. 

When mounted on 1" square PCB (FR-4 or G-10 Material). R_ θ is measured at Ty approximately 90°C. 

Data and specifications subject to change without notice. This product has been designed  for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 11/09 

www.irf.com 

11 



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---

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