# Power MOSFET, N Channel, 55 V, 25 A, 0.037 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:8660158/)

**URL**: https://novapart.co/products/IRLR3105PBF/power-mosfet-n-channel-55-v-25-a-0037-ohm-to-252
**SKU**: IRLR3105PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2700
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 57W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 57W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.037ohm |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 25A |
| Drain Source On State Resistance | 0.037ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:8660158/)

PD - 95553B 

## **Features** 

Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free 

## IRLR3105PbF IRLU3105PbF HEXFET[®] Power MOSFET 

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D<br>VDSS = 55V<br>R  = 0.037 Ω<br>DS(on)<br>G<br>ID = 25A<br>S<br>**----- End of picture text -----**<br>


## **Description** 

This HEXFET[®] Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of  applications. 

The D-Pak is designed for surface mounting using vapor  phase, infrared, or wave soldering techniques.  The straight lead version (IRLU series) is for through-hole mounting applications.  Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. 

|'<br>¢|~~.|
|---|---|
|D-Pak|I-Pak|
|IRLR3105PbF|IRLU3105PbF|



## **Absolute Maximum Ratings** 

|iJ<br>~~a~~|**Parameter**<br>iJ<br>~~ee~~<br>|**Max.**<br>iJ<br>~~oe~~<br>|**Max.**<br>iJ<br>~~oe~~<br>|**Units**<br>iJ<br>~~oe~~<br>|
|---|---|---|---|---|
|ID@ TC= 25°C<br>—<br>~~a~~|Continuous Drain Current, VGS@ 10V<br>—<br>~~ee~~<br>|25<br>—<br>~~oe~~<br>||A<br>—<br>~~oe~~<br>©|
|ID@ TC= 100°C<br>—<br>~~a~~|Continuous Drain Current, VGS@ 10V<br>—<br>~~ee~~<br>|18<br>—<br>~~oe~~<br>|||
|IDM<br>~~a~~|Pulsed Drain Current<br>~~ee~~<br>©|100<br>~~oe~~<br>©|||
|PD@TC= 25°C<br>~~a ~~<br>~~a~~|Power Dissipation<br>~~ee~~<br> <br>~~a~~|57<br>~~oe~~<br><br>~~a~~||W<br>~~oe~~<br><br>~~a~~|
|~~a~~|Linear DeratingFactor<br>~~a~~|0.38<br>~~a~~||W/°C<br>~~a~~|
|VGS<br>~~a~~|Gate-to-Source Voltage<br>~~a~~|± 16<br>~~a~~||V<br>~~a~~|
|EAS<br>~~oo~~<br>~~ee~~|Single Pulse Avalanche Energy<br>~~oo~~<br>~~ee~~|61<br>~~oo~~<br>~~ee~~||mJ<br>~~ee~~<br>~~eee~~|
|EAS(tested)<br>~~ee~~<br>~~a~~|Single Pulse Avalanche EnergyTested Value<br>~~ee~~<br>|94<br>~~ee~~<br>|||
|IAR<br>~~ee~~<br>~~a~~|Avalanche Current<br>~~ee~~<br>|See Fig.12a, 12b, 15, 16<br>~~ee~~<br>||A<br>~~ee~~<br>~~eee~~|
|EAR<br>~~ee~~<br>~~a~~|Repetitive Avalanche Energy<br>~~ee~~<br>|||mJ<br>~~ee~~<br>~~eee~~|
|dv/dt<br>~~a~~|Peak Diode Recoverydv/dt<br>|3.4<br>||V/ns<br>~~eee~~|
|TJ<br>TSTG<br>~~a~~|Operating Junction and<br>Storage Temperature Range<br>~~a~~|-55  to + 175<br>~~a~~|||
|~~a~~|Soldering Temperature, for 10 seconds<br>~~a~~|300 (1.6mm from case )<br>~~a~~|||
|**Thermal Resistance**<br>~~a~~|||||
||**Parameter**|**Typ.**|**Max.**|**Units**|
|RθJC|Junction-to-Case|–––|2.65|°C/W|
|RθJA|Junction-to-Ambient (PCB mount)*|–––|50||
|RθJA|Junction-to-Ambient|–––|110||



## **Thermal Resistance** 

|||~~ee ed~~|~~ed~~||||
|---|---|---|---|---|---|---|
|~~oe~~|**Parameter**<br>ee<br>~~oe~~|**Min.**<br>ee<br>~~ee ed~~<br>~~ed~~<br>~~oe~~|**Typ. **<br>ee<br>~~ed~~<br>~~ed~~<br>~~oe~~|**Max. **<br>ee<br>~~oe~~|**Units**<br>ee<br>~~oe~~|**Conditions**<br>~~2~~|
|V(BR)DSS<br>~~oe~~|Drain-to-Source Breakdown Voltage<br>~~es~~<br>~~oe~~|55<br>~~ee ed~~<br>~~es~~<br>~~ed~~<br>~~oe~~|–––<br>~~ed~~<br>~~es~~<br>~~ed~~<br>~~oe~~|–––<br>~~es~~<br>~~oe~~|V<br>~~es~~<br>~~oe~~|VGS= 0V, ID= 250µA<br>~~2~~|
|∆V(BR)DSS/∆TJ<br>~~oe~~|Breakdown Voltage Temp. Coefficient<br>~~+};~~<br>~~oe~~|–––<br>~~ed~~<br>~~+};~~<br>~~oe~~|0.056<br>~~ed~~<br>~~+};~~<br>~~oe~~|–––<br>~~+};~~<br>~~oe~~|V/°C<br>~~+};—~~<br>~~oe~~|Reference to 25°C, ID= 1mA<br>~~7~~<br>~~2~~|
|RDS(on)<br>~~oe~~|Static Drain-to-Source On-Resistance<br>~~+};~~<br>~~oe~~|–––<br>~~+};~~<br>~~oe~~|30<br>~~+};~~<br>~~oe~~|37<br>~~+};~~<br>~~oe~~|mΩ<br>~~+}; —~~<br>~~oe~~|VGS= 10V, ID= 15A<br>~~7~~<br>~~2~~|
|||–––<br>~~+};~~<br>~~oe~~|35<br>~~+};~~<br>~~oe~~|43<br>~~+};~~<br>~~oe~~||VGS= 5.0V, ID= 13A<br>~~7~~<br>~~2~~|
|VGS(th)<br>~~oe~~<br>~~a~~|Gate Threshold Voltage<br>~~oe~~<br>~~es~~<br>~~a~~|1.0<br>~~oe~~<br>~~es~~|–––<br>~~oe~~<br>~~es~~|3.0<br>~~oe~~<br>~~es~~|V<br>~~oe~~<br>~~es~~|VDS= VGS, ID= 250µA<br>~~2~~<br>~~®~~|
|gfs<br>~~oe~~<br>~~a~~|Forward Transconductance<br>~~oe~~<br>~~a~~|15<br>~~oe~~|–––<br>~~oe~~|–––<br>~~oe~~|S<br>~~oe~~|VDS= 25V, ID= 15A<br>~~2~~<br>~~®~~|
|IDSS<br>~~oe~~<br>~~a~~|Drain-to-Source Leakage Current<br>~~oe~~<br>~~a~~<br>~~EE~~<br>~~**|**~~|–––<br>~~oe~~<br>~~EE~~<br>~~**|**~~|–––<br>~~oe~~<br>~~EE~~|20<br>~~oe~~<br>~~EE~~|µA<br>~~oe~~<br>~~EE~~|VDS= 55V, VGS= 0V<br>~~2~~<br>~~®~~|
|||–––<br>~~oe~~<br>~~EE~~<br>~~**|**~~|–––<br>~~oe~~<br>~~EE~~|250<br>~~oe~~<br>~~EE~~||VDS= 44V, VGS= 0V, TJ= 150°C<br>~~2~~|
|~~oe~~<br>~~less~~<br>~~a~~|Gate-to-Source Forward Leakage<br>~~oe~~<br>~~**|**~~<br>~~a~~|–––<br>~~oe~~<br>~~**|**~~<br>|–––<br>~~oe~~<br>|200<br>~~oe~~<br>|nA<br>~~oe~~<br>|VGS= 16V<br>~~2~~|
||Gate-to-Source Reverse Leakage<br>~~oe~~<br>~~a~~|–––<br>~~oe~~<br>|–––<br>~~oe~~<br>|-200<br>~~oe~~<br>||VGS= -16V<br>~~2~~|
|Qg<br>~~oe~~<br>~~less~~<br>~~a~~|Total Gate Charge<br>~~oe~~<br>~~a~~|–––<br>~~oe~~<br>|–––<br>~~oe~~<br>|20<br>~~oe~~<br>|nC<br>~~oe~~<br>~~ee~~|ID= 15A<br>VDS= 44V<br>VGS= 5.0V, See Fig. 6 and 13<br>~~2~~|
|Qgs<br><br>~~———————~~|Gate-to-Source Charge<br><br>~~———————~~|–––<br><br>~~———————~~|–––<br>|5.6<br>|||
|gs<br>Qgd<br><br>~~———————~~|Gate-to-Drain("Miller")Charge<br>~~ee~~<br>~~———————~~|–––<br>~~ee~~<br>~~———————~~|–––<br>~~ee~~|9.0<br>~~ee~~|||
|td(on)<br>~~———————~~<br>ee|Turn-On Delay Time<br>~~———————~~<br>~~ee~~|–––<br>~~———————~~<br>~~ee~~|8.0<br>~~ee~~|–––<br>~~ee~~|~~ee~~|VDD= 28V<br>ID= 15A<br>RG= 24Ω<br>VGS= 5.0V, See Fig. 10|
|tr<br>~~———————~~<br>ee<br>es|Rise Time<br>~~———————~~<br>~~ee~~|–––<br>~~———————~~<br>~~ee~~|57<br>~~ee~~|–––<br>~~ee~~|||
|td(off)<br>~~———————~~<br>ee<br>es|Turn-Off Delay Time<br>~~———————~~<br>~~ee~~|–––<br>~~———————~~<br>~~ee~~|25<br>~~ee~~|–––<br>~~ee~~|||
|d(off)<br>tf<br>~~———————~~<br>es|Fall Time<br>~~———————~~|–––<br>~~———————~~|37|–––|||
|LD<br>~~———————~~<br>~~po}~~|Internal Drain Inductance<br>~~———————~~<br>~~po}~~<br>~~ne~~|–––<br>~~———————~~|4.5|–––||Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>S<br>D<br>G<br>|<br>~~&~~|
|LS<br>~~po}~~<br>~~ee~~|Internal Source Inductanc<br>~~po}~~<br>~~ne~~<br>|–––<br>ee<br>|7.5<br>ee<br>|–––<br>|||
|Ciss<br>~~po}~~<br>~~ee~~|Input Capacitance<br>~~po}~~<br>~~ne~~<br>~~es~~<br>|–––<br>~~es~~<br>ee<br>|710<br>~~es~~<br>ee<br>|–––<br>~~es~~<br>|VGS= 0V<br>VDS= 25V<br>pF<br>ƒ = 1.0MHz, See Fig. 5<br>VGS= 0V,  VDS= 1.0V,  ƒ = 1.0MHz<br>VGS= 0V,  VDS= 44V,  ƒ = 1.0MHz<br>VGS= 0V, VDS= 0V to 44V<br>|<br>~~&~~<br>~~es~~<br>~~ee~~|VGS= 0V<br>VDS= 25V<br>ƒ = 1.0MHz, See Fig. 5<br>|<br>~~&~~|
|Coss<br>~~po}~~<br>~~ee~~<br>es|Output Capacitance<br>~~po}~~<br>~~ne~~<br>~~ee~~<br>|–––<br>ee<br>~~ee~~|150<br>ee<br>~~ee~~|–––<br>~~ee~~|||
|Crss<br>~~ee~~<br>esen|Reverse Transfer Capacitance<br>~~ee~~<br>en|–––<br>ee <br>~~ee~~|28<br> ee<br>~~ee~~|–––<br>~~ee~~|||
|Coss<br><br>esen|Output Capacitance<br>~~ee~~<br>en|–––<br>~~ee~~|890<br>~~ee~~|–––<br>~~ee~~||VGS= 0V,  VDS= 1.0V,  ƒ = 1.0MHz|
|Coss<br>en<br>a|Output Capacitance<br>en<br>ee|–––<br>ee|110<br>ee|–––<br>ee||VGS= 0V,  VDS= 44V,  ƒ = 1.0MHz|
|Cosseff.<br>en<br>a|Effective Output Capacitance<br>en<br>ee|–––<br>ee|210<br>ee|–––<br>ee|||



When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994 Notes through are  on page 11 

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1000 100<br>VGS VGS<br>TOP          15V TOP          15V<br>                  10V |                   10V eneo<br>                  5.0V                   5.0V<br>100              3.0V siti ail all                   3.0V H arry|<br>                  2.7V                   2.7V<br>                  2.5V                   2.5V<br>                  2.25V 10              2.25V<br>10 Pe BOTTOM 2.0V n ||oe| Ee BOTTOM 2.0V FHHH<br>F eae eee ae 7 Za or |<br>Cam di ———— ee | fy e o<br>AC eer Yi<br>1<br>o y 1 A a 2.0V al<br>0.1<br>S h PAA tH tH<br>2.0V 20µs PULSE WIDTH 20µs PULSE WIDTH<br>0.01 ctl Tj = 25°C Pith 0.1 Tj = 175°C<br>an ieee VARI |<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>1000.00 30<br>TJ = 25°C TJ = 175°C<br>25<br>100.00<br>a a<br>eeeee eee TJ = 175°C 20<br>a L e<br>10.00 T = 25°C<br>J<br>a ————— 15 VA<br>yy |<br>1.00<br>rP ro] 10 L| f<br>rr ee ee ee ee eee /<br>0.10<br>S rrSSeee eee VDS  SS = 25V 5 VDS = 25V<br>— 20µs PULSE WIDTH 20µs PULSE WIDTH<br>0.01 0<br>2.0 4.0 6.0 8.0 0 10 20 30 40<br>VGS, Gate-to-Source Voltage (V) ID, Drain-to-Source Current (A)<br>A) Gfs, Forward Transconductance (S)<br> (<br>ID, Drain-to-Source Current<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Typical Forward Transconductance Vs. Drain Current 

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1600<br>VGS   = 0V,       f = 1 MHZ<br>Ciss    = Cgs + Cgd,   C ds    SHORTED<br>C   = C<br>rss   gd<br>1200 Coss   = Cds + Cgd<br>Ciss<br>S n<br>800 X ——a<br>Coss<br>400<br>Crss<br>S |<br>0<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance Vs.<br>Drain-to-Source Voltage<br>100.0<br>TJ = 175°C<br>10.0<br>1.0 | Tf} Ay tt<br>T = 25°C<br>J<br>VGS = 0V<br>0.1 re<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8<br>VSD, Source-toDrain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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20<br>ID= 15A<br>VDS= 44V<br>16 ee VDS= 28V<br>VDS= 11V<br>12<br>8 n /n<br>4<br>FOR TEST CIRCUIT<br>SEE FIGURE 13<br>0 [|<br>0 10 20 30 40<br> QG  Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 6.** Typical Gate Charge Vs. Gate-to-Source Voltage 

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1000<br>OPERATION IN THIS AREA<br>LIMITED BY RDS(on)<br>100<br>10 100µsec<br>pi et 1msec<br>1<br>10msec<br>Tc = 25°C<br>Tj = 175°C<br>Single Pulse<br>0.1 TOC Con<br>1 10 100 1000<br>VDS  , Drain-toSource Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

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30 3.0<br>ID = 25A<br>Pt tT | tt tt td P E<br>25 Pi} dt tt | | TT 2.5 PT tT tT ELEte tT EEttt ECEtt tl<br>PS tt EE PTT tT teeTy<br>20 Pi PN 2.0 PT tT tT eT tT tt tt yy<br>pit PN EEE ET ttt ttt tT yt<br>15 1.5<br>FEE RCEIN FECvA<br>10 CEEEECCCCENE 1.0 no>aeeeeeee—||<br>5 0.5<br>FEE EEEEEEN FARCE<br>V GS = 10V<br>0 ft ttt | ft | tT | | | 0.0 PiT tT tT ett [t] [t]<br>25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>T   , Case TemperatureC (  C)° T  , Junction TemperatureJ (    C)°<br>Fig 9.   Maximum Drain Current Vs. Fig 10.   Normalized On-Resistance<br>Case Temperature Vs. Temperature<br> 10<br>a<br>D = 0.50<br> 1 p e | |<br>0.20<br>0.10<br>eg a Oe<br>0.05<br>e et SINGLE PULSE P DM<br>0.02 (THERMAL RESPONSE)<br>0.1 0.01<br>== ee | t 1<br>t 2<br>P e<br>Notes:<br>1. Duty factor D = t   / t1 2<br>ce 2. Peak T J = P DM x  Z thJC + T C<br>0.01 nih te<br>0.00001 0.0001 0.001 0.01 0.1<br>t  , Rectangular Pulse Duration (sec)1<br>(Normalized)<br>I   , Drain Current (A)D<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>thJC<br>(Z          )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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100<br>15V I D<br>Pt Tt<br>TOP 6.1A<br>11A<br>NESE<br>VDS L DRIVER 80 BOTTOM 15A<br>ENE<br>RG D.U.T + 60 NEf N<br>- [V][DD]<br>IAS A<br>aa 20VVGS RNGNSS<br>tp 0.01 Ω<br>40<br>*l PARR<br>Fig 12a.   Unclamped Inductive Test Circuit PtASA<br>V(BR)DSS<br>20<br>P| tT SSA<br>tp Pf | SS<br>0<br>25 50 75 100 125 150 175<br>//\ Pt Starting Tj, Junction Temperature ASN (   C)°<br>|<br>IAS 7<br>Fig 12c.   Maximum Avalanche Energy<br>Fig 12b.   Unclamped Inductive Waveforms<br>Vs. Drain Current<br> * QG<br>10 ve<br>QGS QGD 2.0<br>VG ID = 250µA<br>J S T<br>1.5<br>Charge : H is t<br>Fig 13a.   Basic Gate Charge Waveform 1.0<br>L EAT<br>Current Regulator<br>Same Type as D.U.T.<br>50K Ω 0.5<br>12V cp .2 µ F E LE EL<br>.3 µ F<br>+<br>D.U.T. -VDS<br>ET E<br>0.0<br>VGS -75 -50 -25 0 25 50 75 100 125 150 175<br>3mA TJ , Temperature ( °C )<br>ot<br>IG ID<br>Current Sampling Resistors<br>Fig 13b.   Gate Charge Test Circuit Fig 14.   Threshold Voltage Vs. Temperature<br>6 www.irf.com<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

**Fig 12b.** Unclamped Inductive Waveforms 

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1000<br>Duty Cycle = Single Pulse<br>100 Allowed avalanche Current vs<br>avalanche pulsewidth, tav<br>0.01 assuming  ∆ Tj = 25°C due to<br>avalanche losses. Note: In no<br>10 case should Tj be allowed to<br>0.05 exceed Tjmax<br>0.10<br>1<br>a<br>0.1 een ee ee ell<br>1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 15.   Typical Avalanche Current Vs.Pulsewidth<br>70 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>TOP          Single Pulse                 (For further info, see AN-1005 at www.irf.com)<br>60 BOTTOM   50% Duty Cycle 1. Avalanche failures assumption:<br>ID = 15A   Purely a thermal phenomenon and failure occurs at a<br>S e     temperature far in excess of Tjmax. This is validated for<br>50 N E     every part type.<br>2. Safe operation in Avalanche is allowed as long asTjmax is<br>  not exceeded.<br>40<br>N EEL 3. Equation below based on circuit and waveforms shown in<br>  Figures 12a, 12b.<br>30 4. PD (ave) = Average power dissipation per single<br>E AN ETT<br>    avalanche pulse.<br>20 5. BV = Rated breakdown voltage (1.3 factor accounts for<br>S ERRE NGREEE     voltage increase during avalanche).<br>10 6. Iav = Allowable avalanche current.<br>L TT NYT 7.  ∆ T = Allowable rise in junction temperature, not to exceed<br>pitETT     Tjmax (assumed as 25°C in Figure 15, 16).<br>0 AL   tav = Average time in avalanche.<br>25 50 75 100 125 150 175   D = Duty cycle in avalanche =  tav ·f<br>Starting TJ , Junction Temperature (°C)   ZthJC(D, tav) = Transient thermal resistance, see figure 11)<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 16.** Maximum Avalanche Energy Vs. Temperature 

- **PD (ave) = 1/2 ( 1.3·BV·Iav) =** A **T/ ZthJC Iav = 2** A **T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav** 

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Driver Gate Drive<br>P.W.<br>D.U.T + Period — D = ——<br>+ P.W. Period<br>) ©)    •  Circuit Layout Considerations fi V t GS=10V<br> •<br>| =] - LowGround StrayPla I n eductance<br> •   CurrentLow LeakageTransformerInductance ® D.U.T. ISD Waveform<br>+<br>Reverse<br>® - a 38c - ® + RecoveryCurrent r Body Diode ForwardCurrent di/dt /vy<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘ '<br>00 _ VDD<br>iv<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( 4 •   dvidt controlled by Re Vop - Inductor Curent<br>•   D.U.T. - Device Under Test es ee<br>Isp controlled by Duty Factor "D" ® Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


## **Fig 17.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET ® Power MOSFETs 

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-<br>≤ 1  ys<br>≤ 0.1 %<br>**----- End of picture text -----**<br>


**Fig 18a.** Switching Time Test Circuit 

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VDS<br>90%<br>10%<br>VGS |\< ve >!\ vie<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 18b.** Switching Time Waveforms 

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EXAMPLE: THIS IS AN IRFR120<br>WITH ASSEMBLY INTERNATIONAL a PART NUMBER<br>LOT CODE 1234 RECTIFIER IRFR120 DATE CODE<br>ASSEMBLED ON WW 16, 2001 LOGO 116A YEAR 1 =  2001<br>IN THE ASSEMBLY LINE "A" 12 34 WEEK 16<br>LINE A<br>Note: "P" in assembly line positionindicates "Lead-Free" ASSEMBLYLOT CODE i a t<br>"P" in assembly line position indicates<br>"Lead-Free" qualification to the consumer-level<br>PART NUMBER<br>INTERNATIONAL cS<br>OR RECTIFIER IRFR120 P =  DESIGNATES LEAD-FREEDATE CODE<br>LOGO PRODUCT (OPTIONAL)<br>12 34 P =  DESIGNATES LEAD-FREE<br>ASSEMBLYLOT CODE i iam t PRODUCT QUALIFIED TO THECONSUMER LEVEL (OPTIONAL)<br>YEAR 1 =  2001<br>WEEK 16<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


## **Notes: 1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** www.irf.com 

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EXAMPLE: THIS IS AN IRFU120 PART NUMBER<br>WITH ASSEMBLYLOT CODE 5678ASSEMBLED ON WW 19, 2001 INTERNATIONALRECTIFIERLOGO a 56IRFU120119A78 DATE CODEYEAR 1 =  2001WEEK 19<br>IN THE ASSEMBLY LINE "A"<br>LINE A<br>ASSEMBLY<br>LOT CODE<br>Note: "P" in assembly line position<br>indicates Lead-Free"<br>OR<br>PART NUMBER<br>INTERNATIONAL co N<br>RECTIFIER IRFU120 DATE CODE<br>LOGO P =  DESIGNATES LEAD-FREE<br>56 78 PRODUCT (OPTIONAL)<br>ASSEMBLY YEAR 1 =  2001<br>LOT CODE WEEK 19<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


## **Notes: 1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 10 

www.irf.com 

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TR TRR TRL<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>12.1 ( .476 ) Cac FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION -<br>11.9 ( .469 ) 7.9 ( .312 )<br>NOTES :<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).<br>3.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>|   13 INCH<br>16 mm<br>ma =<br>**----- End of picture text -----**<br>


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1. OUTLINE CONFORMS TO EIA-481.<br>**----- End of picture text -----**<br>


Repetitive rating;  pulse width limited by Cossoss eff. is a fixed capacitance that gives the same charging time max. junction temperature. as Coss while VDS is rising from 0 to 80% VDSS .oss while VDS is rising from 0 to 80% VDSS .while VDS is rising from 0 to 80% VDSS .DS is rising from 0 to 80% VDSS .is rising from 0 to 80% VDSS .DSS . . ®© Limited by TJmax, starting TJ = 25°C, L = 0.55mH Limited by TJmax ' Jmax ' see Fig 12a, 12b, 15, 16 for typical repetitive RG = 25 Ω , IAS = 15A, VGS =10V avalanche performance. ® ISD ≤ 25A, di/dt ≤ 290A/µs, VDD ≤ V(BR)DSS, ® This value determined from sample failure population. 100% TJ ≤ 175°C 

Cossoss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS .oss while VDS is rising from 0 to 80% VDSS .while VDS is rising from 0 to 80% VDSS .DS is rising from 0 to 80% VDSS .is rising from 0 to 80% VDSS .DSS . . 

Limited by TJmax ' Jmax ' see Fig 12a, 12b, 15, 16 for typical repetitive avalanche performance. 

® This value determined from sample failure population. 100% tested to this value in production. 

Pulse width ≤ 300µs; duty cycle ≤ 2%. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 10/2010 

www.irf.com 

11 



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---

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