# Power MOSFET, N Channel, 30 V, 55 A, 0.019 ohm, TO-252AA, Surface Mount

![Product image](https://novapart.co/image/farnell:2580038RL/)

**URL**: https://novapart.co/products/IRLR3103TRPBF/power-mosfet-n-channel-30-v-55-a-0019-ohm-to-252aa
**SKU**: IRLR3103TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3480
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Channel Type | N Channel |
| Power Dissipation | 107W |
| Drain Source On State Resistance | 0.019ohm |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2580038RL/)

## PD - 95085A 

## IRLR/U3103PbF 

Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount (IRLR3103) Straight Lead (IRLU3103) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free 

## HEXFET[®] Power MOSFET 

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D<br>VDSS = 30V<br>R  = 0.019Ω<br>DS(on)<br>G<br>ID = 55A<br>S<br>**----- End of picture text -----**<br>


## **Description** 

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. 

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   D-PAK    I-PAK<br>TO-252AA TO-251AA<br>**----- End of picture text -----**<br>


The D-PAK is designed for surface mounting using TO-252AA TO-251AA vapor  phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications.  Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. **Absolute Maximum Ratings** a a **Parameter Max. Units** ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 55 @ ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 39 A IDM Pulsed Drain Current 220 PD @TC = 25°C Power Dissipation 107 W ~~a—————~~ Linear Derating Factor 0.71 W/°C ~~eT~~ VGS Gate-to-Source Voltage ± 16 V ~~ee~~ EAS Single Pulse Avalanche Energy ~~or~~ 240 mJ IAR Avalanche Current 34 A ~~**—**~~ EAR ~~—~~ Repetitive Avalanche Ener ~~a~~ gy 11 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55  to + 175 TSTG Storage Temperature Range °C ~~——~~ Soldering Temperature, for 10 seconds 300 (1.6mm from case ) ~~===~~ **Thermal Resistance Parameter Typ. Max. Units** RθJC Junction-to-Case ––– 1.4 RθJA Junction-to-Ambient (PCB mount) ** ––– 50 °C/W RθJA Junction-to-Ambient ––– 110 

www.irf.com 

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## IRLR/U3103PbF 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|~~ee~~|~~rs~~|~~rs~~|||||
|---|---|---|---|---|---|---|
|~~ee~~<br>~~Rs~~|**Parameter**<br>~~rs~~<br>~~ee~~|**Min.**<br>~~rs~~<br>~~QO~~|**Typ. **<br>~~QO~~|**Max.**|**Units**|**Conditions**|
|V(BR)DSS<br>~~ee~~<br>~~Rs~~|Drain-to-Source Breakdown Voltage<br>~~rs ~~<br>~~ee~~|30<br> ~~rs~~<br>~~QO~~<br>~~rs~~|–––<br>~~QO~~<br>~~rs~~|–––<br>~~eG~~|V<br>~~eG~~|VGS= 0V, ID= 250µA|
|∆V(BR)DSS/∆TJ<br>~~Rs ~~<br>~~rs~~|Breakdown Voltage Temp. Coefficient<br> ~~ee~~<br>~~rs~~|–––<br>~~QO~~<br>~~rs~~<br>~~rs~~|0.037<br>~~QO~~<br>~~rs~~<br>~~rs~~|–––<br>~~rs~~<br>~~eG~~|V/°C<br>~~rs~~<br>~~eG~~|Reference to 25°C, ID= 1mA<br>~~rs~~|
|RDS(on)<br>~~Ee~~<br>~~es ee~~<br>~~a~~|Static Drain-to-Source On-Resistance<br>~~Ee~~<br>~~fT~~<br>~~ee~~<br>|–––<br>~~rs~~<br>~~Ee~~|––– <br>~~rs ~~<br>~~Ee~~|0.019<br> ~~eG~~<br>~~Ee~~|Ω<br>~~eG~~<br>~~Ee~~<br>|VGS= 10V, ID= 33A<br>~~Ee~~|
|||–––<br>~~Ee~~<br>~~fT~~<br>~~QO~~<br>|––– <br>~~Ee~~<br>~~fT~~<br>~~QO~~<br>|0.024<br>~~Ee~~<br>~~fT~~<br>||VGS= 4.5V, ID= 25A<br>~~Ee~~<br>|
|VGS(th)<br>~~es ee~~<br>~~a~~|Gate Threshold Voltage<br>~~fT~~<br>~~ee~~<br>|1.0<br>~~fT~~<br>~~QO~~<br>|–––<br>~~fT~~<br>~~QO~~<br><br>~~rs~~|–––<br>~~fT~~<br>|V<br>|VDS= VGS, ID= 250µA<br>|
|gfs<br>~~es ee~~<br>~~aes~~|Forward Transconductance<br>~~fT~~<br>~~ee~~<br>~~es~~|23<br>~~fT~~<br>~~QO~~<br>~~es~~|–––<br>~~fT~~<br>~~QO~~<br>~~es~~<br>~~rs~~<br>~~EE~~|–––<br>~~fT~~<br>~~es~~<br>~~EE~~|S<br>~~es~~<br>~~EE~~|VDS= 25V, ID= 34A<br>~~es~~<br>~~EE~~|
|IDSS<br>~~ee~~|Drain-to-Source Leakage Current<br>~~ee~~<br>~~Ft~~|–––<br>~~ee~~|–––<br>~~rs~~<br>~~ee~~<br>~~EE~~|25<br>~~ee~~<br>~~EE~~|µA<br>~~ee~~<br>~~EE~~<br>~~ee~~|VDS= 30V, VGS= 0V<br>~~ee~~<br>~~EE~~|
|||–––<br>~~ee~~<br>~~Ft~~|–––<br>~~ee~~<br>~~EE~~<br>~~Ft~~|250<br>~~ee~~<br>~~EE~~||VDS= 18V, VGS= 0V, TJ= 150°C<br>~~ee~~<br>~~EE~~<br>~~ee~~|
|IGSS<br>~~OE~~<br>~~ee~~<br>~~es~~|Gate-to-Source Forward Leakage<br>~~OE~~<br>~~ee~~|–––<br>~~OE~~|–––<br>~~EE~~<br>~~OE~~|100<br>~~EE~~<br>~~OE~~|nA<br>~~EE~~<br>~~OE~~<br>~~Po~~|VGS= 16V<br>~~EE~~<br>~~OE~~<br>~~Po~~|
||Gate-to-Source Reverse Leakage<br>~~OE~~<br>~~ee~~|–––<br>~~OE~~|–––<br>~~OE~~|-100<br>~~OE~~||VGS= -16V<br>~~OE~~<br>~~Po~~|
|Qg<br>~~ee~~<br>~~es~~<br>ee~~ee~~<br>~~es~~|Total Gate Charge<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|50<br>~~ee~~|nC<br>~~Po~~|ID= 34A<br>VDS= 24V<br>VGS= 4.5V, See Fig. 6 and 13<br>~~Po~~<br>~~oe)~~|
|Qgs<br>~~ee~~<br>~~es~~<br>ee~~ee~~<br>~~es~~|Gate-to-Source Charge<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|14<br>~~ee~~|||
|Qgd<br>ee~~ee~~<br>~~es~~<br>~~esee~~|Gate-to-Drain("Miller")Charge<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|28<br>~~ee~~|||
|td(on)<br>~~es~~<br>~~esee~~|Turn-On Delay Time<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|9.0<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|ns<br>~~—+—————++-}||~~|VDD= 15V<br>ID= 34A<br>RG= 3.4Ω,VGS= 4.5V<br>RD= 0.43Ω,See Fig. 10<br>~~oe)~~<br>~~@@~~<br>~~—+—————++-}|| .&~~|
|tr<br>~~esee~~<br>a~~ee~~<br>ee~~ee~~<br>a|Rise Time<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|210<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––|||
|td(off)<br>ee~~ee~~<br>a|Turn-Off Delay Time<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|20<br>~~ee~~|–––|||
|tf<br>ee~~ee~~<br>a<br>~~—+—————++-}||~~|Fall Time<br>~~ee~~<br>~~ee~~<br>~~—+—————++-}||~~|–––<br>~~ee~~<br>~~ee~~<br>~~—+—————++-}||~~|54<br>~~ee~~<br>~~—+—————++-}||~~|–––<br>~~—+—————++-}||~~|||
|LD<br>~~—+—————++-}||~~|Internal Drain Inductance<br>~~ee~~<br>~~—+—————++-}||~~|–––<br>~~—+—————++-}||~~|4.5<br>~~—+—————++-}||~~|–––<br>~~—+—————++-}||~~|nH<br>~~—+—————++-}||~~|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>S<br>D<br>G<br>~~@@~~<br>~~—+—————++-}|| .&~~|
|LS<br>~~—+—————++-}||~~|Internal Source Inductance<br>~~—+—————++-}||~~|–––<br>~~—+—————++-}||~~|7.5<br>~~—+—————++-}||~~|–––<br>~~—+—————++-}||~~|||
|Ciss<br>~~—+—————++-}||~~<br>~~a~~<br>ee~~ee~~<br>es|Input Capacitance<br>~~—+—————++-}||~~<br>~~ee~~<br>|–––<br>~~—+—————++-}||~~<br>~~ee~~<br>ee|1600<br>~~—+—————++-}||~~<br>~~ee~~|–––<br>~~—+—————++-}||~~|pF<br>~~—+—————++-}||~~|VGS= 0V<br>VDS= 25V<br>ƒ = 1.0MHz, See Fig. 5<br>~~—+—————++-}||  .&~~<br>@|
|Coss<br>ee~~ee~~<br>es|Output Capacitance<br>~~ee~~<br>ee|–––<br>~~ee~~<br>ee<br>es|640<br>~~ee~~|–––|||
|Crss<br>ee~~ee~~<br>es|Reverse Transfer Capacitance<br>~~ee~~<br>ee|–––<br>~~ee~~<br>ee<br>es|320<br>~~ee~~|–––|||



## **Notes:** 

o) Repetitive rating;  pulse width limited by @ Pulse width ≤ 300µs; duty cycle ≤ 2% max. junction temperature. ( See fig. 11 ) © @ VDD = 15V, starting TJ = 25°C, L = 300µHDD = 15V, starting TJ = 25°C, L = 300µH= 15V, starting TJ = 25°C, L = 300µHJ = 25°C, L = 300µH= 25°C, L = 300µH temperature; Package limitation current = 20A 

max. junction temperature. ( See fig. 11 ) © Calculated continuous current based on maximum allowable junction VDD = 15V, starting TJ = 25°C, L = 300µHDD = 15V, starting TJ = 25°C, L = 300µH= 15V, starting TJ = 25°C, L = 300µHJ = 25°C, L = 300µH= 25°C, L = 300µH temperature; Package limitation current = 20A G = 25Ω, IAS = 34A. (See Figure 12)= 25Ω, IAS = 34A. (See Figure 12)Ω, IAS = 34A. (See Figure 12), IAS = 34A. (See Figure 12)AS = 34A. (See Figure 12)= 34A. (See Figure 12) © This is applied for I-PAK, LS of D-PAK is measured between lead and center of  die contact ISD ≤ 34A, di/dt ≤ 140A/µs, VDD ≤ V(BR)DSS, @ Uses IRL3103 data and test conditions TJ ≤ 175°C 

RG = 25Ω, IAS = 34A. (See Figure 12)= 25Ω, IAS = 34A. (See Figure 12)Ω, IAS = 34A. (See Figure 12), IAS = 34A. (See Figure 12)AS = 34A. (See Figure 12)= 34A. (See Figure 12) 

- **   When mounted on 1" square PCB (FR-4 or G-10 Material ) . 

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For recommended footprint and soldering techniques refer to application note #AN-994 2 

## IRLR/U3103PbF 

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1000  TOP           15V ee 1000  TOP           15V<br>                   12V                   10V Seaes eee eetee                    12V                   10V                   10V<br>                   8.0V                   6.0V oe                    8.0V                   6.0V                   6.0V<br>                   4.0V                    4.0V<br>                   3.0V                    3.0V<br> BOTTOM   2.5V | fb |  BOTTOM   2.5V<br>100 PN eo | 100<br>ee” fi |<br>ff |<br>10 V/cm 10 >”<br>ES ee ee ” fe<br>ASE<br>a 2.5V | Of<br> 20µs PULSE WIDTH<br> T   = 25°CJ<br>1 r a e A ee 1  2<br>0.1 1 10 100 0.1<br>V     , Drain-to-Source Voltage (V)DS<br>I   , Drain-to-Source Current (A)D I   , Drain-to-Source Current (A)DD<br>**----- End of picture text -----**<br>


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1000  TOP           15V eeech<br>                   12V                   10V                   10V ee<br>                   8.0V                   6.0V                   6.0V A a |<br>                   4.0V<br>                   3.0V<br> BOTTOM   2.5V On ee<br>100 Pl<br>ey Cel<br>| fyi<br>10 >” Ammen ee<br>2.5V<br>” fe ee eee<br>W e r<br>Of i<br> 20µs PULSE WIDTH<br> T   = 175°CJ<br>1  2<br>0.1 1 10 100<br>V     , Drain-to-Source Voltage (V)DS<br>I   , Drain-to-Source Current (A)DD<br>**----- End of picture text -----**<br>


**Fig 1.** Typical Output Characteristics 

**Fig 2.** Typical Output Characteristics 

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1000 ==a SaaS Sea e=——<br>PEePee ee ee ee eee<br>p pp T  = 25°CJ<br>100 | | eer—<br>T  = 175°CJ<br>ee a<br>ay ae eee<br>10<br>eS-f|}- |<br>oooiyip | | fySS| fTSS|eeefy fT yf fy fTeetf<br>yf}<br> V     = 15VDS<br>1 PL ft tt<br>th cous purse wor<br>2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0<br>V     , Gate-to-Source Voltage (V)GS<br>D<br>I   , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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2.0 P LLY,<br>1.5 PLE EEE LLL APz<br>. Z|<br>Anry<br>1.0 an<br>eT<br>0.5 PTE EE<br>EEE<br>0.0 LL Ev fod<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>T   , Junction Temperature (°C)J<br>(Normalized)<br>DS(on)<br>R           ,  Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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## IRLR/U3103PbF 

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3200 V      = 0V,         f = 1MHzGS 15 I    = 34ADD<br>2800 —r C      = C     + C     ,   C     SHORTEDC      = Ciss         gs         gd         dsrss         gd T w Gh<br>s C      = C     + Coss        ds         gd 12<br>2400 a |<br>2000 ss<br>NoSOS Sp 9 PP pps pps YA<br>1600 ee Pi) Tt] | | ll LA<br>Ro NT PTT | LR<br>1200 6<br>SU ss eA<br>SSE ttYA<br>800<br>es YA<br><0) es ET 3 ete|<br>400<br>SSPE |  FOR TEST CIRCUIT  tT<br>0 a A 0 ZG     SEE FIGURE 13<br>1 10 100 0 10 20 30 40 50 60<br>V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)GG<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>1000 1000<br> OPERATION IN THIS AREA LIMITED<br>                       BY RDS(on)<br>o f<br>eePye 100 eeeaeens eee 10µs EI<br>pean SS 100µs alll<br>100 een PS<br>=== 545655nD> a0 OG eeenee lee<br>a T  = 175°CJ ee 1ms<br>a 10 ~ %<br>4]  ff T  = 25°C 2 J } S lS 10ms<br>on /A0n Gee ee eect e e e<br>10 f/eeeee eee A 1  Single Pulse aeoT TIEeeETT|<br>0.4 0.8 1.2 1.6 2.0 2.4 2.8 1 10 100<br>V     , Source-to-Drain Voltage (V)SD V     , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A)D<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


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15<br>I    = 34ADD<br>T w Gh<br>12<br>9 PP pps pps YA<br>Pi) Tt] | | ll LA<br>PTT | LR<br>6<br>eA<br>ttYA<br>3 ete|  FOR TEST CIRCUIT  tT<br>ZG     SEE FIGURE 13<br>0<br>0 10 20 30 40 50 60 70<br>Q   , Total Gate Charge (nC)GG<br>GS<br>V     , Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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## IRLR/U3103PbF 

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60<br>LIMITED BY PACKAGE<br>50 BEER  LC PtE Ves vo<br>ERRN : D.U.T.<br>40 Pt eT VfEE A L - Vop<br>PT tT P| tl<br>30 PEPPERS Cr soy ≤ 1<br>≤ 0.1 %<br>PERE EEEE xSCE == z<br>20<br>Pi tT ee EE ET LIN | Fig 10a.   Switching Time Test Circuit<br>10 PT tT eT tT tT tt tt A VDS<br>90%<br>Pi ti te tet yyy<br>0 FT Tt tt ttt |] fy |<br>25 50 75 100 125 150 175<br>° |<br>T   , Case TemperatureC (  C)<br>|<br>10%<br>VGS f |<br>Fig 9.   Maximum Drain Current Vs. t \« d(on) >< tr >! t le d(off) tf<br>Case Temperature<br>Fig 10b.   Switching Time Waveforms<br> 10 ===.- eee<br>VV<br>SS OO OO<br>SeeA e —<br> 1<br>D = 0.50<br>(a A a ce<br>p oe eer<br>0.20 SS<br>0.10 |__ ——— ——s a<br>PDM<br>0.1 0.05 ee ee|eee<br>a 0.02 SINGLE PULSE t1<br>0.01 (THERMAL RESPONSE) t2<br>= aaSS See es e s eea e Notes: neee<br>1. Duty factor D = t   / t1 2<br>Pot i 2. Peak TJ= P DM x  Z thJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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## IRLR/U3103PbF 

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15V<br>L DRIVER<br>VDS<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>i<br>10V<br>Boe tp 0.01Ω<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

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V(BR)DSS<br>~<— tp —><br>/ al<br>/ Ih<br>IAS<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

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f QG T<br>——— — ——<br>QGS QGD<br>VG<br>an “ _<br>Charge<br>**----- End of picture text -----**<br>


**Fig 13a.** Basic Gate Charge Waveform 

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600<br>                    ID<br>Pt| ft TOP            14A<br>NERS                    24A<br>500 KURREnne BOTTOM    34A<br>400 ENG eee<br>ERNE<br>300 RIN | tt<br>PAIN EE<br>200 NaNEPI MN ENENE EEE<br>100 Poe pf  AARaS AK<br> V      = 15V PT DD<br>0<br>25 50 75 100 125 150 175<br>Starting T  , Junction Temperature (°C)J<br>AS<br>E     ,   Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>4 .3µF<br>+<br>LL it | D.U.T. -VDS<br>VGS<br>3mA<br>(at |<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 13b.** Gate Charge Test Circuit 

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## IRLR/U3103PbF 

## **Peak Diode Recovery dv/dt Test Circuit** 

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+ Circuit Layout Considerations<br>D.U.T<br>   •  Low Stray Inductance<br> •  Ground Plane<br> •  Low Leakage Inductance<br>(faa)       Current Transformer<br>| | -<br>+<br>- - +<br>Ke.<br>00)<br>RG •  dv/dt controlled by RG +<br>se •  Driver same type as D.U.T. - VDD<br>•  ISD controlled by Duty Factor "D"<br>•  D.U.T. - Device Under Test<br>**----- End of picture text -----**<br>


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O) Driver Gate Drive<br>P.W.<br>Period D =<br>es P.W. | Period _!<br>VGS=10V<br>( \<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current i Current di/dt JN<br>©) D.U.T. VDS Waveform<br>Diode Recovery<br>dv/dt<br>VDD<br>ma<br>Re-Applied ai<br>Voltage Body Diode  Forward Drop<br>® Inductor Curent<br>a<br>Ripple  ≤ 5% ISD<br>* VGS = 5V for Logic Level Devices<br>**----- End of picture text -----**<br>


**Fig 14.** For N-Channel HEXFETS 

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## IRLR/U3103PbF 

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EXAMPLE: THIS IS AN IRFR120<br>PART NUMBER<br>WITH ASSEMBLY<br>INTERNATIONAL<br>LOT CODE 1234 RECTIFIER IRFU120 DATE CODE<br>ASSEMBLED ON WW 16, 1999 LOGO 916A YEAR 9 =  1999<br>IN THE ASSEMBLY LINE "A" 12 34 WEEK 16<br>LINE A<br>Note: "P" in assembly line position ASSEMBLY<br>indicates "Lead-Free" LOT CODE : : |<br>OR<br>PART NUMBER<br>INTERNATIONAL<br>RECTIFIER IRFU120 DATE CODE<br>LOGO TAaR Poica P =  DESIGNATES LEAD-FREE<br>12 34 PRODUCT (OPTIONAL)<br>YEAR 9 =  1999<br>ASSEMBLY { : { WEEK 16<br>LOT CODE<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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## IRLR/U3103PbF 

**==> picture [289 x 164] intentionally omitted <==**

**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRFU120 PART NUMBER<br>INTERNATIONAL<br>WITH ASSEMBLY<br>LOT CODE 5678 RECTIFIER IRFU120 DATE CODE<br>LOGO 919A YEAR 9 =  1999<br>ASSEMBLED ON WW 19, 1999 56 78 WEEK 19<br>IN THE ASSEMBLY LINE "A"<br>LINE A<br>ASSEMBLY<br>Note:  "P" in assembly line  LOT CODE<br>position indicates "Lead-Free"<br>a<br>PART NUMBER<br>INTERNATIONAL gc N<br>RECTIFIER IRFU120 DATE CODE<br>LOGO TEAR P99 P =  DESIGNATES LEAD-FREE<br>56 78 PRODUCT (OPTIONAL)<br>YEAR 9 =  1999<br>ASSEMBLY WEEK 19<br>LOT CODE A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


www.irf.com 

9 

## IRLR/U3103PbF 

**==> picture [282 x 242] intentionally omitted <==**

**----- Start of picture text -----**<br>
TR TRR TRL<br>eeooooo\ | oeoo/4<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>CC, 1) ,<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>NOTES :<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).<br>3.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>|   13 INCH<br>16 mm<br>|X a<br>**----- End of picture text -----**<br>


NOTES : 

**==> picture [101 x 5] intentionally omitted <==**

**----- Start of picture text -----**<br>
1. OUTLINE CONFORMS TO EIA-481.<br>**----- End of picture text -----**<br>


Data and specifications subject to change without notice. International 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 12/04 

www.irf.com 

10 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



## Links

- [View this product on Novapart](https://novapart.co/products/IRLR3103TRPBF/power-mosfet-n-channel-30-v-55-a-0019-ohm-to-252aa)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/infineon/irlr3103trpbf/mosfet-n-ch-30v-55a-to-252aa-3/dp/2580038RL)
---

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