# Power MOSFET, N Channel, 55 V, 42 A, 0.027 ohm, TO-252AA, Surface Mount

![Product image](https://novapart.co/image/farnell:2781154RL/)

**URL**: https://novapart.co/products/IRLR2905TRLPBF/power-mosfet-n-channel-55-v-42-a-0027-ohm-to-252aa
**SKU**: IRLR2905TRLPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4970
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.027ohm; ; Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (27-Jun-2018) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 110W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252AA |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 42A |
| Drain Source On State Resistance | 0.027ohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2781154RL/)

## IRLR/U2905PbF PD- 95084A 

Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount (IRLR2905) Straight Lead (IRLU2905) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free 

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D<br>VDSS = 55V<br>R  = 0.027Ω<br>DS(on)<br>G<br>ID = 42A<br>S<br>**----- End of picture text -----**<br>


Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. 

|The D-PAK is designed for surface mounting using vapor  phase, infrared, or<br>wave soldering techniques.  The straight lead version (IRFU series) is for|D-Pak<br>TO-252AA|I-Pak<br>TO-251AA|
|---|---|---|
|through-hole mounting applications.  Power dissipation levels up to 1.5 watts|||
|are possible in typical surface mount applications.|||
|Absolute Maximum Ratings|||
|**Parameter**<br>**Max.**<br>**Units**<br>ID@ TC= 25°C<br>Continuous Drain Current, VGS@ 10V<br>42<br>ID@ TC= 100°C<br>Continuous Drain Current, VGS@ 10V<br>30<br>A<br>IDM<br>Pulsed Drain Current<br>160<br>PD@TC= 25°C<br>Power Dissipation<br>110<br>W<br>Linear DeratingFactor<br>0.71<br>W/°C<br>VGS<br>Gate-to-Source Voltage<br>± 16<br>V<br>EAS<br>Single Pulse Avalanche Energy<br>210<br>mJ<br>IAR<br>Avalanche Current<br>25<br>A<br>EAR<br>Repetitive Avalanche Energy<br>11<br>mJ<br>dv/dt<br>Peak Diode Recoverydv/dt<br>5.0<br>V/ns<br>TJ<br>Operating Junction and<br>-55  to + 175<br>TSTG<br>Storage Temperature Range<br>Soldering Temperature, for 10 seconds<br>300 (1.6mm from case )<br>°C<br>ee<br>~~ee~~<br>o<br>~~**a**e~~<br>~~ee~~<br>~~a~~<br>~~a~~<br>~~a~~<br>~~Re~~<br>~~a~~<br>~~Rs~~<br>~~Ce~~<br>~~ee~~|||
|**Thermal Resistance**|||
|**Parameter**<br>**Typ.**|**Max.**|**Units**|
|RθJC<br>Junction-to-Case<br>–––|1.4||
|RθJA<br>Case-to-Ambient (PCB mount)**<br>–––|50|°C/W|
|RθJA<br>Junction-to-Ambient<br>–––|110||



- **   When mounted on 1" square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note #AN-994 

www.irf.com 

1 

12/7/04 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|a|**Parameter**<br>Oe|**Min.**<br>Oe|**Typ. **<br>GO|**Max.**<br>GO|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~eG~~|Drain-to-Source Breakdown Voltage<br>~~eG~~|55<br>~~eG~~|–––<br>~~eG~~|–––<br>~~eG~~|V<br>~~eG~~|VGS= 0V, ID= 250µA<br>~~eG~~|
|∆V(BR)DSS/∆TJ<br>~~a GG~~|Breakdown Voltage Temp. Coefficient<br>~~GG~~|–––<br>~~GG~~|0.070<br>~~GG~~|–––<br>~~GG~~|V/°C<br>~~GG~~|Reference to 25°C, ID= 1mA<br>~~GG~~|
|RDS(on)<br>~~===~~|Static Drain-to-Source On-Resistance<br>~~===~~<br>~~|~~|–––<br>~~===~~|–––<br>~~===~~|0.027<br>~~===~~|W<br>~~===~~<br>~~|~~|VGS= 10V, ID= 25A<br>~~===~~|
|||–––<br>~~===~~<br>~~|~~<br>~~|~~|–––<br>~~===~~<br>~~||~~|0.030<br>~~===~~<br>~~|~~||VGS= 5.0V, ID= 25A<br>~~===~~|
|||–––<br>~~===~~<br>~~|~~<br>~~|~~|–––<br>~~===~~<br>~~||~~|0.040<br>~~===~~<br>~~|~~||VGS= 4.0V, ID= 21A<br>~~===~~|
|VGS(th)<br>~~GO~~<br>~~ee~~|Gate Threshold Voltage<br>~~|~~<br>~~GO~~<br>~~ee~~|1.0<br>~~|~~<br>~~|~~<br>~~GO~~<br>~~ee~~|–––<br>~~||~~<br>~~GO~~|2.0<br>~~|~~<br>~~GO~~|V<br>~~|~~<br>~~GO~~|VDS= VGS, ID= 250µA<br>~~GO~~|
|gfs<br>~~ee~~<br>~~pop~~|Forward Transconductance<br>~~ee~~<br>~~pop~~|21<br>~~ee~~<br>|–––<br>|–––<br>|S<br>|VDS= 25V, ID= 25A<br>|
|IDSS<br>~~ee~~<br>~~pop~~<br>~~po~~|Drain-to-Source Leakage Current<br>~~ee ~~<br>~~poper~~<br>~~po~~|–––<br>~~ee~~<br>~~er~~|–––<br>~~er~~|25<br>~~er~~|µA<br>~~er~~|VDS= 55V, VGS= 0V<br>~~er~~|
|||–––<br> ~~ee~~<br>~~er~~<br>~~po~~|–––<br>~~er~~|250<br>~~er~~||VDS= 44V, VGS= 0V, TJ= 150°C<br>~~er~~<br>~~po~~|
|IGSS<br>~~pop~~<br>~~po~~|Gate-to-Source Forward Leakage<br>~~poper~~<br>~~po~~|–––<br>~~er~~<br>~~po~~|–––<br>~~er~~|100<br>~~er~~|nA<br>~~er~~|VGS= 16V<br>~~er~~<br>~~po~~|
||Gate-to-Source Reverse Leakage<br>~~poper~~<br>~~po~~|–––<br>~~er~~<br>~~po~~|–––<br>~~er~~|-100<br>~~er~~||VGS= -16V<br>~~er~~<br>~~po~~|
|Qg<br>~~a~~|Total Gate Charge|–––|–––|48|nC|ID= 25A<br>VDS= 44V<br>VGS= 5.0V, See Fig. 6 and 13<br>@0|
|Qgs|Gate-to-Source Charge|–––|–––|8.6|||
|Qgd<br>a|Gate-to-Drain("Miller")Charge|–––|–––|25|||
|td(on)<br>~~a~~|Turn-On Delay Time<br>~~a~~|–––<br>~~a~~|11<br>~~a~~|–––<br>~~a~~|ns|VDD= 28V<br>ID= 25A<br>RG= 3.4Ω,VGS= 5.0V<br>RD= 1.1Ω,See Fig. 10<br>@0|
|tr<br>~~a~~|Rise Time<br>~~a~~|–––<br>~~a~~|84<br>~~a~~|–––<br>~~a~~|||
|td(off)|Turn-Off Delay Time|–––|26|–––|||
|tf<br>~~a~~|Fall Time<br>~~a~~|–––<br>~~a~~|15<br>~~a~~|–––<br>~~a~~|||
|LD<br>~~Se~~|Internal Drain Inductance<br>~~Se~~|~~Se~~|4.5<br>~~Se~~|~~Se~~|nH<br>~~Se~~|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>S<br>D<br>G<br>~~Se~~<br>~~°~~|
|LS<br>~~Se~~<br>~~ee~~|Internal Source Inductance<br>~~Se~~<br>~~ee~~|–––<br>~~Se~~<br>~~ee~~|7.5<br>~~Se~~<br>~~ee~~|–––<br>~~Se~~|||
|Ciss<br>~~ee~~|Input Capacitance<br>~~ee ~~|–––<br> ~~ee~~|1700<br>~~ee~~|–––|pF|VGS= 0V<br>VDS= 25V<br>ƒ = 1.0MHz, See Fig. 5<br>~~°~~<br>@|
|Coss<br>a|Output Capacitance|–––|400|–––|||
|Crss<br>a|Reverse Transfer Capacitance|–––|150|–––|||



## **Notes:** 

- Repetitive rating;  pulse width limited by 

- max. junction temperature. ( See fig. 11 ) VDD = 25V, starting TJ = 25°C, L =470µH 

- RG = 25Ω, IAS = 25A. (See Figure 12) 

- ISD ≤ 25A, di/dt ≤ 270A/µs, VDD ≤ V(BR)DSS, 

- TJ ≤ 175°C 

aculated continuous current based on maximum allowable junction temperature;     Package limitation current = 20A. This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact. 

Uses IRLZ44N data and test conditions. 

Pulse width ≤ 300µs; duty cycle ≤ 2%. 

www.irf.com 

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1000 1000<br> TOP           15V  TOP           15V<br>                   12V                    12V<br>                   10V er ee                    10V er et<br>                   8.0V                   6.0V LS a el                    8.0V                   6.0V LS a el<br>                   4.0V                    4.0V<br>                   3.0V                    3.0V<br> BOTTOM   2.5V  BOTTOM   2.5V<br>100 Pe 1 a eer| 100 wre.HN<br>SSa SSSiy anes eeemeetis aedae eer cadememeeeeslll<br>ey PP<br>a? A/.ae ee mYRR AA eee<br>10 7a | 10 a A, 2.5V<br>geet ee 2.5V tt eeeee<br>YL oo ’ 77 ee ell<br> 20µs PULSE WIDTH  20µs PULSE WIDTH<br>1 a minio  T   = 25°CJ A 1 QA i onn  T   = 175°CJ<br>0.1 1 10 100 0.1 1 10 100<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>1000 SS = SS SS SS SS 3.0 ee<br>eeRe ee ee ee ee eee eee 2.5 PEELE EEE EEE EE<br>Pf PEE<br>T  = 25°CJ<br>100 Pt eee 2.0 PLETE Le<br>S e SS PEEEEEE ae<br>T  = 175°CJ<br>ae a e 1.5 Pt<br>P T A PLerer<br>10 LA | | tt 1.0 Pt eet<br>FF ee Deaa<br>ee 0.50.0 HTL tt tte<br>if fej | f{ | | | | | fy | yf tf<br>1 Ee}(ee| |||  V     = 25V cous DS PULSE WIDTH A 0.0 P EEELEEEELEE EE E EE E v= tow<br>2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>V     , Gate-to-Source Voltage (V)GS T   , Junction Temperature (°C)JJ<br>I   , Drain-to-Source Current (A)D I   , Drain-to-Source Current (A)D<br>(Normalized)<br>D<br>I   , Drain-to-Source Current (A)<br>DS(on)<br>R           ,  Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


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3.0<br>ee<br>2.5 PEELE EEE EEE EE<br>PEE<br>2.0<br>PLETE Le<br>PEEEEEE ae<br>1.5 Pt<br>PLerer<br>1.0 Pt eet<br>Deaa<br>0.50.0 HTL P EEELEEEELEE tt E EE tte E EE E v= tow<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>T   , Junction Temperature (°C)JJ<br>(Normalized)<br>DS(on)<br>R           ,  Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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2800<br>V      = 0V,         f = 1MHzGS<br>C      = C     + C     ,   C     SHORTEDiss         gs         gd         ds<br>2400 C      = Crss         gd<br>s C      = oss        ds         gdC     + C<br>2000 a<br>a<br>1600 oo<br>ss<br>1200<br>Soe}<br>Soe<br>800 PN<br>ss<br>400 Bo<br>Se a ll<br>0 eei<br>1 10 100<br>V     , Drain-to-Source Voltage (V)DS<br>Fig 5.   Typical Capacitance Vs.<br>Drain-to-Source Voltage<br>1000<br>ee ee<br>100<br>T  = 175°CJ<br>= == S22 ===<br>p e<br>T  = 25°CJ<br>YF , ff<br>A<br>10 AL Lt oe A<br>0.4 0.8 1.2 1.6 2.0 2.4<br>V     , Source-to-Drain Voltage (V)SD<br>C, Capacitance (pF)<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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15<br>I    = 25AD<br>12<br>ee PS<br>SeEeeEeeGEpCEe<br>9<br>WA<br>6<br>= EAE<br>eA<br>Va<br>3<br>PL wy | tt<br>TT TTT)<br> FOR TEST CIRCUIT<br>0 A / |} fl STTTTT,     SEE FIGURE 13<br>0 10 20 30 40 50 60 70<br>Q   , Total Gate Charge (nC)G<br>GS<br>V     , Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 6.** Typical Gate Charge Vs. Gate-to-Source Voltage 

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1000<br> OPERATION IN THIS AREA LIMITED<br>                       BY RDS(on)<br>ee |<br>100 10µs<br>100µs<br>ea ae<br>10<br>mESiSell e 1ms<br>10ms<br>pee tt |<br> Single Pulse<br>1 Seer PD L<br>1 10 100<br>V     , Drain-to-Source Voltage (V)DS<br>I   , Drain Current (A)D<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

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50<br>LIMITED BY PACKAGE<br>Pf || | || Vos Rp<br>40 Sal | | | Ves D.U.T.<br>PAPE EEE Re -<br>30<br>po Pp sy ≤ 1<br>Pit TA Pt cco wish ys<br>PE ≤ 0.1 %<br>20<br>SEER AE TT PSt Ed Fig 10a.   Switching Time Test Circuit Dey Fase<br>10 PT tT  EREeENEEET EL TAN VDS .<br>90%<br>pit ttt ti tT tN )<br>0 PEt TEL ETE |<br>25 50 75 100 125 150 175<br>T   , Case TemperatureC (  C)° |<br>10%<br>VGS |<br>\¢ >< >! «+ s ><br>Fig 9.   Maximum Drain Current Vs. td(on) tr td(off) tf<br>Case Temperature<br>Fig 10b.   Switching Time Waveforms<br> 10<br>pCee eSCTTT TY<br>a1 —— mel<br> 1<br>D = 0.50<br>OTE, (— oe Cl EE eh OE EEE<br>0.20 ee e ee ee<br>0.10 ee_ eee ee<br>PDM<br>0.1 0.05<br>t1<br>0.02 SINGLE PULSE<br>om e 0.01 | oTT Ty (THERMAL RESPONSE) a 1. Duty factor D =Notes: t   / t1 2 t2<br>0.01 FE TE S| EE 2. Peak T J= P DM x  Z thJC + TC<br>0.00001 0.0001 0.001 0.01 0.1<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>a 20V<br>tp 0.01Ω<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

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V(BR)DSS<br>~— tp —><br>/<br>/ \<br>/ \<br>IAS<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

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—p o QG n<br>ey<br>QGS QGD<br>V ae G a yy<br>Charge<br>**----- End of picture text -----**<br>


**Fig 13a.** Basic Gate Charge Waveform 

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500<br>                    ID<br>Pt TOP            10A<br>                   17A<br>400 NERBNE BOTTOM    25A<br>PN tT tt<br>300 NINE<br>200<br>NEN<br>SARE<br>100<br>PEASANT<br>ASST<br> V      = 25V pT DD<br>0 SS<br>25 50 75 100 125 150 175<br>Starting T  , Junction Temperature (°C)J<br>AS<br>E     ,   Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>.3µF<br>LL it +<br>D.U.T. -VDS<br>VGS<br>(at<br>3mA<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 13b.** Gate Charge Test Circuit 

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D.U.T + Circuit Layout Considerations<br>™    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| - Current Transformer<br>+<br>- - +<br>(0<br>®<br>Rg •   dv/dt controlled by Rg +<br>•   Driver same type as D.U.T. -<br>•<br>•   D.U.T. - Device Under Test<br>(1) Isp controlled by Duty Factor "D"<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _t<br>VGS=10V<br>t<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current ii Current di/dt /<br>©) D.U.T. VDS Waveform<br>Diode Recovery<br>dv/dt<br>VDD<br>ma<br>Re-Applied<br>Voltage Body Diode  a Forward Drop<br>® Inductor Curent ee ee<br>Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


**Fig 14.** For N-Channel HEXFETS 

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EXAMPLE: THIS IS AN IRFR120<br>PART NUMBER<br>WITH ASSEMBLY<br>INTERNATIONAL<br>LOT CODE 1234 RECTIFIER IRFU120 DATE CODE<br>ASSEMBLED ON WW 16, 1999 LOGO 916A YEAR 9 =  1999<br>IN THE ASSEMBLY LINE "A" 12 34 WEEK 16<br>LINE A<br>Note: "P" in assembly line position ASSEMBLY<br>indicates "Lead-Free" LOT CODE 7 : |<br>OR<br>PART NUMBER<br>INTERNATIONAL<br>RECTIFIER IRFU120 DATE CODE<br>LOGO Tea Pasa P =  DESIGNATES LEAD-FREE<br>12 34 PRODUCT (OPTIONAL)<br>YEAR 9 =  1999<br>ASSEMBLY | : t WEEK 16<br>LOT CODE<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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EXAMPLE: THIS IS AN IRFU120 PART NUMBER<br>INTERNATIONAL<br>WITH ASSEMBLY<br>LOT CODE 5678 RECTIFIER IRFU120 DATE CODE<br>LOGO 919A YEAR 9 =  1999<br>ASSEMBLED ON WW 19, 1999 56 78 WEEK 19<br>IN THE ASSEMBLY LINE "A"<br>LINE A<br>ASSEMBLY<br>Note:  "P" in assembly line  LOT CODE<br>position indicates "Lead-Free"<br>a<br>PART NUMBER<br>INTERNATIONAL go N<br>RECTIFIER IRFU120 DATE CODE<br>LOGO I@AR P919A P =  DESIGNATES LEAD-FREE<br>56 78 PRODUCT (OPTIONAL)<br>YEAR 9 =  1999<br>ASSEMBLY WEEK 19<br>LOT CODE A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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TR TRR TRL<br>eeooo¢oo\ | o$eoo/4<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>CeCe, O15) ,<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>NOTES :<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>**----- End of picture text -----**<br>


2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 

3.  OUTLINE CONFORMS TO EIA-481 & EIA-541. 

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  13 INCH<br>**----- End of picture text -----**<br>


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16 mm<br>NOTES :<br>**----- End of picture text -----**<br>


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1. OUTLINE CONFORMS TO EIA-481.<br>**----- End of picture text -----**<br>


**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** _Data and specifications subject to change without notice. 12/04_ 

www.irf.com 

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Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



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