# Power MOSFET, N Channel, 30 V, 23 A, 0.045 ohm, TO-252AA, Surface Mount

![Product image](https://novapart.co/image/farnell:2726014/)

**URL**: https://novapart.co/products/IRLR2703TRPBF/power-mosfet-n-channel-30-v-23-a-0045-ohm-to-252aa
**SKU**: IRLR2703TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2360
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.045ohm; ; Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 45W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252AA |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 23A |
| Drain Source On State Resistance | 0.045ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2726014/)

|Logic-Level Gate Drive<br>Ultra Low On-Resistance<br>Surface Mount (IRLR2703)<br>Straight Lead (IRLU2703)<br>Advanced Process Technology<br>Fast Switching|G||D||VDSS= 30V<br>RDS(on)= 0.045Ω|
|---|---|---|---|---|---|
|Fully Avalanche Rated|||||ID= 23A<br>©|
|Lead-Free|||S|||



Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. 

The D-PAK is designed for surface mounting using vapor  phase, infrared, or wave soldering techniques.  The straight lead version (IRFU series) is for through-hole mounting applications.  Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. 

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   D-Pak    I-Pak<br>TO-252AA TO-251AA<br>**----- End of picture text -----**<br>


|ee<br>~~es~~<br>~~oe~~|**Parameter**<br>ee<br>~~oe~~|**Max.**<br>ee<br>©|**Units**|
|---|---|---|---|
|ID@ TC= 25°C<br>~~es~~<br>~~oe~~|Continuous Drain Current, VGS@ 10V<br>~~oe~~|23<br>©|A|
|ID@ TC= 100°C<br>~~es~~<br>~~oe~~|Continuous Drain Current, VGS@ 10V<br>~~oe~~|16<br>©||
|IDM<br>~~oe~~<br>a|Pulsed Drain Current<br>~~oe~~|96||
|PD@TC= 25°C<br>~~oe~~<br>~~a~~|Power Dissipation<br>~~oe~~|45|W|
|~~a~~|Linear DeratingFactor|0.30|W/°C|
|VGS<br>~~a a~~|Gate-to-Source Voltage<br>~~a~~|± 16|V|
|EAS<br>~~i~~|Single Pulse Avalanche Energy<br>~~i~~<br>~~=~~|77<br>~~=~~|mJ|
|IAR<br>~~a~~|Avalanche Current<br>~~a~~|14|A|
|EAR<br>~~a~~<br>~~Re~~|Repetitive Avalanche Energy<br>~~a~~<br>~~a~~|4.5|mJ|
|dv/dt<br>~~Re~~|Peak Diode Recoverydv/dt<br>~~a~~|5.0|V/ns|
|TJ<br>TSTG<br>~~Re~~|Operating Junction and<br>Storage Temperature Range<br>~~a~~|-55  to + 175|°C|
|a|Soldering Temperature, for 10 seconds|300 (1.6mm from case )||



## **Thermal Resistance** 

||**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RθJC|Junction-to-Case|–––|3.3|°C/W|
|RθJA|Case-to-Ambient (PCB mount)**|–––|50||
|RθJA|Junction-to-Ambient|–––|110||



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## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|eG<br>~~a~~|**Parameter**<br>eG<br>|**Min.**<br>eG<br>|**Typ. **<br>eG<br>|**Max.**<br>eG<br>~~OG~~<br>|**Units**<br>eG<br>~~OG~~<br>|**Conditions**<br>eG<br>|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~a~~<br>~~Po~~|Drain-to-Source Breakdown Voltage<br>~~GGG~~<br>~~Po~~|30<br>~~GGG~~<br>|–––<br>~~GGG~~<br>|–––<br>~~OG~~<br>~~GGG~~<br>|V<br>~~OG~~<br>~~GGG~~<br>|VGS= 0V, ID= 250µA<br>~~GGG~~<br>|
|∆V(BR)DSS/∆TJ<br>~~Po=~~|Breakdown Voltage Temp. Coefficient<br>~~Po=~~|–––<br>~~=~~|0.030<br>~~=~~|–––<br>~~=~~|V/°C<br>~~=~~|Reference to 25°C, ID= 1mA<br>~~=~~|
|RDS(on)<br>~~Po=~~<br>~~a~~|Static Drain-to-Source On-Resistance<br>~~Po=~~<br>~~|~~<br>|–––<br>~~=~~<br>~~|~~<br>|––– <br>~~=~~<br>|0.045<br>~~=~~<br>|Ω<br>~~=~~<br>|VGS= 10V, ID= 14A<br>~~=~~<br>|
|||–––<br>~~=~~<br>~~|~~<br>|––– <br>~~=~~<br>|0.065<br>~~=~~<br>||VGS= 4.5V, ID= 12A<br>~~=~~<br>|
|VGS(th)<br>~~a~~|Gate Threshold Voltage<br>~~|~~<br>~~GGG~~|1.0<br>~~|~~<br>~~GGG~~|–––<br>~~GGG~~|–––<br>~~GGG~~|V<br>~~GGG~~|VDS= VGS, ID= 250µA<br>~~GGG~~|
|gfs<br>~~a~~|Forward Transconductance<br>~~Ge~~|6.4<br>~~Ge~~|–––<br>~~OG~~|–––<br>~~OG~~|S<br>~~OG~~|VDS= 25V, ID= 14A|
|IDSS<br>~~EE~~<br>~~pO~~|Drain-to-Source Leakage Current<br>~~EE~~<br>~~pO~~|–––<br>~~EE~~|–––<br>~~EE~~|25<br>~~EE~~|µA<br>~~EE~~|VDS= 30V, VGS= 0V<br>~~EE~~|
|||–––<br>~~EE~~<br>~~pO~~|–––<br>~~EE~~<br>~~pO~~|250<br>~~EE~~<br>~~pO~~||VDS= 24V, VGS= 0V, TJ= 150°C<br>~~EE~~<br>~~pO~~|
|IGSS<br>~~pO~~|Gate-to-Source Forward Leakage<br>~~pO~~|–––<br>~~pO~~|–––<br>~~pO~~|100<br>~~pO~~|nA|VGS= 16V<br>~~pO~~|
||Gate-to-Source Reverse Leakage<br>~~pO~~|–––<br>~~pO~~|–––<br>~~pO~~|-100<br>~~pO~~||VGS= -16V<br>~~pO~~|
|Qg<br>~~a~~|Total Gate Charge|–––|–––|15|nC|ID= 14A<br>VDS= 24V<br>VGS= 4.5V, See Fig. 6 and 13<br>©|
|Qgs|Gate-to-Source Charge|–––|–––|4.6|||
|Qgd<br>a|Gate-to-Drain("Miller")Charge|–––|–––|9.3|||
|td(on)<br>~~a~~|Turn-On Delay Time|–––|8.5|–––|ns|VDD= 15V<br>ID= 14A<br>RG= 12Ω,VGS= 4.5V<br>RD= 1.0Ω,See Fig. 10<br>©0|
|d(on)<br>tr<br>a|Rise Time<br>|–––<br>|140<br>|–––<br>|||
|td(off)<br>|Turn-Off Delay Time<br>|–––<br>|12<br>|–––<br>|||
|tf<br>e<br>~~oe~~|Fall Time<br>e~~e~~|–––<br>~~e~~|20<br>~~e~~|–––<br>~~e~~|||
|LD<br>~~oe~~|Internal Drain Inductance|–––|4.5|–––|nH|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>S<br>D<br>G<br>.|
|LS<br>~~oe~~<br>a|Internal Source Inductance|–––|7.5|–––|||
|Ciss<br>~~oe~~<br>ee|Input Capacitance|–––|450|–––|pF|VGS= 0V<br>VDS= 25V<br>ƒ = 1.0MHz, See Fig. 5<br>@|
|Coss<br>ee|Output Capacitance|–––|210|–––|||
|Crss<br>ee<br>a|Reverse Transfer Capacitance|–––|110|–––|||



## **Source-Drain Ratings and Characteristics** 

|~~—>—~~|**Parameter**<br>~~—>—~~|**Min.**<br>|**Typ. **<br>|**Max. **<br>|**Units**<br>|**Conditions**|
|---|---|---|---|---|---|---|
|IS<br>~~—>—~~<br>~~po~~<br>~~eS~~|Continuous Source Current<br>(Body Diode)<br>~~—>—se~~<br>~~po~~|–––<br>~~se~~<br>~~jf}~~<br>~~po~~|–––<br>~~se~~<br>~~jf}~~|23<br>~~se~~<br>~~jf}f~~|~~se~~|S<br>D<br>G<br>MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunction diode.<br>a<br>~~@~~|
|ISM<br>~~—>—~~<br>~~po~~<br>~~eS~~|Pulsed Source Current<br>(BodyDiode)<br>~~—>—se~~<br>~~po~~|–––<br>~~se~~<br>~~jf}~~<br>~~po~~|–––<br>~~se~~<br>~~jf}~~|96<br>~~se~~<br>~~jf}f~~|||
|VSD<br>~~po~~<br>~~eS~~|Diode Forward Voltage<br>~~po~~|–––<br>~~jf}~~<br>~~po~~|–––<br>~~jf}~~|1.3<br>~~jf}f~~|V|TJ= 25°C, IS= 14A, VGS= 0V<br>~~@~~|
|trr<br>~~po~~<br>~~eS~~<br>~~_-——_+-—__________}__1_1~~|Reverse Recovery Time<br>~~po~~<br>~~_-——_+-—__________}__1_1~~|–––<br>~~jf}~~<br>~~po~~<br>~~_-——_+-—__________}__1_1~~|65<br>~~jf}~~<br>~~_-——_+-—__________}__1_1~~|97<br>~~jf}f~~<br>~~_-——_+-—__________}__1_1~~|ns|TJ= 25°C, IF= 14A<br>di/dt = 100A/µs<br>~~@~~<br>~~@0~~|
|Qrr<br>~~po~~<br>~~eS~~<br>~~_-——_+-—__________}__1_1~~|Reverse RecoveryCharge<br>~~po~~<br>~~_-——_+-—__________}__1_1~~|–––<br>~~jf}~~<br>~~po~~<br>~~_-——_+-—__________}__1_1~~|140<br>~~jf}~~<br>~~_-——_+-—__________}__1_1~~|210<br>~~jf}~~ ~~f~~<br>~~_-——_+-—__________}__1_1~~|nC||
|ton<br>~~_-——_+-—__________}__1_1~~|Forward Turn-On Time<br>~~_-——_+-—__________}__1_1~~|Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)<br>~~_-——_+-—__________}__1_1~~<br>~~@0~~|||||



## **Notes:** 

Repetitive rating;  pulse width limited by max. junction temperature. ( See fig. 11 ) VDD = 15V, starting TJ = 25°C, L =570µH 

- RG = 25Ω, IAS = 14A. (See Figure 12) 

- ISD ≤ 14A, di/dt ≤ 140A/µs, VDD ≤ V(BR)DSS, 

- TJ ≤ 175°C 

Caculated continuous current based on maximum allowable junction temperature;     Package limitation current = 20A. This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact. Uses IRL2703 data and test conditions. 

Pulse width ≤ 300µs; duty cycle ≤ 2%. 

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1000  TOP           15V vest<br>                   12V<br>                   10V<br>                   8.0V LL a<br>                   6.0V<br>                   4.0V<br>100                    3.0V BOTTOM   2.5V te ch<br>RE |<br>10<br>A A<br>1<br>O01 | ll<br>ee ee<br>2.5V  20µs PULSE WIDTH<br>ani> anni nn  T   = 25°CJ<br>0.1<br>0.1 1 10 100<br>V     , Drain-to-Source Voltage (V)DS<br>Fig 1.   Typical Output Characteristics<br>100 SS SSS SS eS<br>|===yh T  = 25°C sane >-—— J i | | eee| | | ft<br>10 Zi LA e T  = 175°CJ ooee[ot<br>HH Af | | | |<br>eeooin| | ee| ye yeeetree<br>He<br>1 Pee<br>FREESE EES EEeSee<br>HtEETEE EE<br>HE<br> V     = 15VDS<br>0.1 (ceePEL EL | cous curse wore<br>2 3 4 5 6 7 8 9 10<br>V     , Gate-to-Source Voltage (V)GS<br>I   , Drain-to-Source Current (A)D<br>D<br>I   , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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1000  TOP           15V vest<br>                   12V<br>                   10V<br>                   8.0V a<br>                   6.0V<br>                   4.0V<br>100                    3.0V BOTTOM   2.5V ina om<br>ne? in<br>10<br>OO<br>2.5V<br>1<br>LL ee | |<br>a ee ee eee eee<br> 20µs PULSE WIDTH<br>+HTe  T   = 175°CJ<br>0.1<br>0.1 1 10 100<br>V     , Drain-to-Source Voltage (V)DS<br>I   , Drain-to-Source Current (A)D<br>**----- End of picture text -----**<br>


**Fig 2.** Typical Output Characteristics 

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2.0 nl =23A p<br>PP LLLLTE LY7}<br>1.5 4ae<br>PL LAA LL<br>1.0 PEEL~ PE ve Pa "1<br>Pe<br>LT<br>0.5 PELE LLL<br>PEL<br>0.0 PE EE E E LVy<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>T   , Junction Temperature (°C)J<br>(Normalized)<br>DS(on)<br>R           ,  Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance Vs. Temperature 

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15<br>I    = 14ADD<br>12 p ee eeeee eeeee eeee ee ee<br>PR<br>9<br>poet |<br>P| tT |tLetLe<br>6 ee Aa<br>Sayan<br>3<br>Pore |<br> FOR TEST CIRCUIT<br>0 Anef}4-)     SEE FIGURE 13 f |<br>0 4 8 12 16 20<br>Q   , Total Gate Charge (nC)GG<br>GS<br>V     , Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


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1000 15<br>V      = 0V,         f = 1MHzGS I    = 14ADD<br>C      = C     + C     ,   C     SHORTEDiss         gs         gd         ds<br>C      = Crss         gd<br>800 |ia[| C      = C     + Coss        ds         gd 12 p ee eeeee eeeee eeee ee ee<br>| s [Iu PR<br>600 9<br>. ss SU al poet |<br>Da | P| tT |tLetLe<br>400 NEE 6 ee Aa<br>ss<br>ll Sayan<br>200 pA 3 Pore |<br> FOR TEST CIRCUIT<br>0 lilii ll A 0 f}4-)Anef}4-)     SEE FIGURE 13 f |<br>1 10 100 0 4 8 12 16 20<br>V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)GG<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>100 1000<br> OPERATION IN THIS AREA LIMITED<br>                       BY RDS(on)<br>Sa a aee<br>ie T  = 175°CJ ne 100<br>7 eae ee ee a 10µs<br>T  = 25°CJ<br>10<br>= = pT SS<br>100µs<br>HF 10 PRAT LC T<br>1ms<br>oePEE Se a eeee e eect<br>10ms<br>1 Tianc ee | ow A 1 BRS  Single Pulse eee l<br>0.4 0.8 1.2 1.6 2.0 2.4 1 10 100<br>V     , Source-to-Drain Voltage (V)SD V     , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A)D<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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25<br>LIMITED BY PACKAGE<br>20 Ka Vos D.U.T.<br>-<br>PLT AN EE EE ET Re | Veo<br>15<br>CCCP SE -<br>≤ 1<br>PTT TT NEE mice wth ≤ 0.1 %<br>10 Pet ET EAT Dey Fase :<br>SERN Fig 10a.   Switching Time Test Circuit<br>ERR<br>5 VDS<br>90%<br>Pi ti TET TTT )<br>0 PEt tT PET EE |<br>25 50 75 100 125 150 175<br>T   , Case TemperatureC (  C)° |<br>10%<br>VGS |<br>\¢ >< >! «+ s ><br>Fig 9.   Maximum Drain Current Vs. td(on) tr td(off) tf<br>Case Temperature<br>Fig 10b.   Switching Time Waveforms<br>10<br>ssOO ee QR DGD Q ONG OGG GG NG GG GO OOO<br>ee<br>1 — D = 0.50 SEErHIBall CLorreeee CCTTTCETIT<br>0.20<br>ay 0.10 aseeCS<br>0.05<br>0.02 PDM<br>0.01<br>0.1 ce       SINGLE PULSE eeA ttal t1 Ld<br>| (THERMAL RESPONSE) rene t een 2 |<br>ee eeee 1. Duty factor D =  t   / t 1 2<br>0.01 e een e e<br>0.00001 0.0001 0.001 0.01 0.1 1<br>t   , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJC<br>Thermal Response (Z       )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>20V I<br>tp 0.01Ω<br>toe<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

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V(BR)DSS<br>~<— tp —><br>/<br>y |<br>/ |<br>IAS<br> Unclamped Inductive Waveforms<br>i QG I<br>ey Poo on<br>QGS QGD<br>VG<br>ale os yy<br>Charge<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

**Fig 13a.** Basic Gate Charge Waveform 

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160<br>                    I D<br>TOP            5.7A<br>                   9.9A<br>BOTTOM    14A<br>NETH<br>120<br>Af | |<br>PN ttt<br>80<br>NAN<br>NAKA EE<br>40<br>p SAN tt<br>TPS<br> V      = 15VDD<br>0 pot ESA<br>25 50 75 100 125 150 175<br>Starting T  , Junction Temperature (°C)J<br>AS<br>E     ,   Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>.3µF<br>+<br>LL it |<br>D.U.T. -VDS<br>VGS<br>3mA t ||<br>|<br>of.<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 13b.** Gate Charge Test Circuit 

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D.U.T + Circuit Layout Considerations<br>™    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| - Current Transformer<br>+<br>- - +<br>(0<br>®<br>Rg •   dv/dt controlled by Rg +<br>•   Driver same type as D.U.T. -<br>•<br>•   D.U.T. - Device Under Test<br>(1) Isp controlled by Duty Factor "D"<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _t<br>VGS=10V<br>t<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current ii Current di/dt /<br>©) D.U.T. VDS Waveform<br>Diode Recovery<br>dv/dt<br>VDD<br>ma<br>Re-Applied<br>Voltage Body Diode  a Forward Drop<br>® Inductor Curent ee ee<br>Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


**Fig 14.** For N-Channel HEXFETS 

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EXAMPLE: THIS IS AN IRFR120<br>PART NUMBER<br>WITH ASSEMBLY<br>INTERNATIONAL<br>LOT CODE 1234 RECTIFIER IRFU120 DATE CODE<br>ASSEMBLED ON WW 16, 1999 LOGO 916A YEAR 9 =  1999<br>IN THE ASSEMBLY LINE "A" 12 34 WEEK 16<br>LINE A<br>Note: "P" in assembly line position ASSEMBLY<br>indicates "Lead-Free" LOT CODE . : |<br>OR<br>PART NUMBER<br>INTERNATIONAL<br>RECTIFIER IRFU120 DATE CODE<br>LOGO TeaR P9i6d P =  DESIGNATES LEAD-FREE<br>12 34 PRODUCT (OPTIONAL)<br>YEAR 9 =  1999<br>ASSEMBLY | : { WEEK 16<br>LOT CODE<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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EXAMPLE: THIS IS AN IRFU120 PART NUMBER<br>INTERNATIONAL<br>WITH ASSEMBLY<br>LOT CODE 5678 RECTIFIER IRFU120 DATE CODE<br>LOGO 919A YEAR 9 =  1999<br>ASSEMBLED ON WW 19, 1999 56 78 WEEK 19<br>IN THE ASSEMBLY LINE "A"<br>LINE A<br>ASSEMBLY<br>Note:  "P" in assembly line  LOT CODE<br>position indicates "Lead-Free"<br>a<br>PART NUMBER<br>INTERNATIONAL GN<br>RECTIFIER IRFU120 DATE CODE<br>LOGO IeaR Pgi9d P =  DESIGNATES LEAD-FREE<br>56 78 PRODUCT (OPTIONAL)<br>YEAR 9 =  1999<br>ASSEMBLY WEEK 19<br>LOT CODE A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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TR TRR TRL<br>eeoeogeoo\ 4 oeoo/4<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>CCE, GIO}<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>NOTES :<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).<br>3.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>|   13 INCH<br>16 mm<br>mN se] be<br>**----- End of picture text -----**<br>


NOTES : 

1. OUTLINE CONFORMS TO EIA-481. 

Data and specifications subject to change without notice. International 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 12/04 

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Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRLR2703TRPBF/power-mosfet-n-channel-30-v-23-a-0045-ohm-to-252aa)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irlr2703trpbf/mosfet-n-ch-30v-23a-to-252aa/dp/2726014)
---

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