# Power MOSFET, N Channel, 55 V, 17 A, 0.065 ohm, TO-252AA, Surface Mount

![Product image](https://novapart.co/image/farnell:2468052/)

**URL**: https://novapart.co/products/IRLR024NTRPBF/power-mosfet-n-channel-55-v-17-a-0065-ohm-to-252aa
**SKU**: IRLR024NTRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2840
**Stock**: 1000+
**Lead Time**: 190 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.065ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Po

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 45W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252AA |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 17A |
| Drain Source On State Resistance | 0.065ohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2468052/)

## IRLR024NPbF IRLU024NPbF HEXFET[®] Power MOSFET 

|||HEXFET|HEXFET|HEXFET|HEXFET[®]Power MOSFET|
|---|---|---|---|---|---|
|Logic-Level Gate Drive<br>Surface Mount (IRLR024N)<br>Straight Lead (IRLU024N)<br>Advanced Process Technology<br>Fast Switching|G||D||VDSS= 55V<br>RDS(on)= 0.065Ω|
|Fully Avalanche Rated<br>Lead-Free|||S||ID= 17A|



Fifth Generation HEXFET[®] Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible onresistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. 

The D-PAK is designed for surface mounting using vapor  phase, infrared, or wave soldering techniques.  The straight lead version (IRFU series) is for through-hole mounting applications.  Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. 

D-Pak I-Pak IRLR024NPbF    IRLU024NPbF 

||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|ID@ TC= 25°C<br>~~a~~<br>ee|Continuous Drain Current, VGS@ 10V<br>~~ee~~|17<br>~~ee~~|A|
|ID@ TC= 100°C<br>ee|Continuous Drain Current, VGS@ 10V<br>~~ee~~|12<br>~~ee~~||
|IDM<br>ee<br>a|Pulsed Drain Current<br>~~ee~~|72<br>~~ee~~||
|PD@TC= 25°C<br>~~a~~|Power Dissipation<br>~~a~~|45|W|
|~~a~~|Linear DeratingFactor<br>~~a~~<br>~~a~~|0.3|W/°C|
|VGS<br>~~a~~<br>~~a~~|Gate-to-Source Voltage<br>~~a~~<br>~~a~~<br>~~i~~<br>~~G~~|± 16<br>~~G~~|V|
|EAS<br>~~a~~|Single Pulse Avalanche Energy<br>~~i~~<br>~~G~~|68<br>~~G~~|mJ|
|IAR<br>~~a ~~<br>~~©~~|Avalanche Current<br> ~~i~~<br>~~G~~<br>~~©~~|11<br>~~G~~<br>~~©~~|A<br>~~©~~|
|EAR<br>~~a~~|Repetitive Avalanche Energy<br>~~a~~<br>~~©~~|4.5<br>~~a~~|mJ<br>~~a~~|
|dv/dt<br>~~a~~|Peak Diode Recoverydv/dt|5.0|V/ns|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55  to + 175|°C|
||Soldering Temperature, for 10 seconds|300 (1.6mm from case )||



## **Thermal Resistance** 

||**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RθJC|Junction-to-Case|–––|3.3|°C/W|
|RθJA|Case-to-Ambient (PCB mount)**|–––|50||
|RθJA|Junction-to-Ambient|–––|110||



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12/6/04 

**Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|a|**Parameter**<br>a|**Min.**<br>a|**Typ. **<br>a|**Max.**<br>a|**Units**<br>a|**Conditions**<br>a|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~a~~|Drain-to-Source Breakdown Voltage<br>~~a~~|55<br>~~a~~|–––<br>~~a~~|–––<br>~~a~~|V<br>~~a~~|VGS= 0V, ID= 250µA<br>~~a~~|
|∆V(BR)DSS/∆TJ<br>~~a~~|Breakdown Voltage Temp. Coefficient<br>~~a~~<br>~~EE~~|–––<br>~~a~~<br>~~EE~~|0.061<br>~~a~~<br>~~EE~~|–––<br>~~a~~<br>~~EE~~|V/°C<br>~~a~~|Reference to 25°C, ID= 1mA<br>~~a~~|
|RDS(on)<br>~~ef~~|Static Drain-to-Source On-Resistance<br>~~ef~~<br>~~EE~~<br>==|–––<br>~~ef~~<br>~~EE~~|–––<br>~~ef~~<br>~~EE~~|0.065<br>~~ef~~<br>~~EE~~|Ω<br>~~ef~~<br>==|VGS= 10V, ID= 10A<br>~~ef~~|
|||–––<br>~~ef~~<br>~~EE~~|––– <br>~~ef~~<br>~~EE~~|0.080<br>~~ef~~<br>~~EE~~||VGS= 5.0V, ID= 10A<br>~~ef~~|
|||–––<br>~~ef~~<br>~~EE~~<br>==|–––<br>~~ef~~<br>~~EE~~<br>==|0.110<br>~~ef~~<br>~~EE~~<br>==||VGS= 4.0V, ID= 9.0A<br>~~ef~~|
|VGS(th)<br>~~a~~|Gate Threshold Voltage<br>~~EE~~<br>~~a~~|1.0<br>~~EE~~<br>~~a~~|–––<br>~~EE~~<br>~~a~~|2.0<br>~~EE~~<br>~~a~~|V<br>~~a~~|VDS= VGS, ID= 250µA<br>~~a~~|
|gfs<br>~~a~~<br>~~pop~~|Forward Transconductance<br>~~a~~<br>~~pop~~|8.3<br>~~a~~<br>|–––<br>~~a~~<br>|–––<br>~~a~~<br>|S<br>~~a~~<br>|VDS= 25V, ID= 11A<br>~~a~~<br>|
|IDSS<br>~~a~~<br>~~pop~~|Drain-to-Source Leakage Current<br>~~a~~<br>~~poper~~|–––<br>~~a~~<br>~~er~~|–––<br>~~a~~<br>~~er~~|25<br>~~a~~<br>~~er~~|µA<br>~~a~~<br>~~er~~|VDS= 55V, VGS= 0V<br>~~a~~<br>~~er~~|
|||–––<br>~~er~~|–––<br>~~er~~|250<br>~~er~~||VDS= 44V, VGS= 0V, TJ= 150°C<br>~~er~~|
|IGSS<br>~~pop~~|Gate-to-Source Forward Leakage<br>~~poper~~<br>~~=~~|–––<br>~~er~~<br>~~=~~|–––<br>~~er~~|100<br>~~er~~|nA<br>~~er~~|VGS= 16V<br>~~er~~<br>~~———~~|
||Gate-to-Source Reverse Leakage<br>~~poper~~<br>~~=~~|–––<br>~~er~~<br>~~=~~<br>~~ee~~|–––<br>~~er~~<br>~~ee~~|-100<br>~~er~~<br>~~ee~~||VGS= -16V<br>~~er~~<br>~~———~~|
|Qg<br>~~a~~|Total Gate Charge<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|15<br>~~ee~~<br>~~ee~~|nC|ID= 11A<br>VDS= 44V<br>VGS= 5.0V, See Fig. 6 and 13<br>0®|
|Qgs|Gate-to-Source Charge|–––<br>~~ee~~|–––<br>~~ee~~|3.7<br>~~ee~~|||
|Qgd<br>a|Gate-to-Drain("Miller")Charge<br>ee|–––<br>ee|–––<br>ee|8.5<br>ee|||
|td(on)<br>~~a~~|Turn-On Delay Time|–––|7.1|–––|ns|VDD= 28V<br>ID= 11A<br>RG= 12Ω,VGS= 5.0V<br>RD= 2.4Ω,See Fig. 10<br>~~08~~|
|tr<br>a|Rise Time<br>~~ee~~|–––<br>~~ee~~|74<br>~~ee~~|–––<br>~~ee~~|||
|td(off)<br>~~ee~~|Turn-Off Delay Time<br>~~ee~~|–––<br>~~ee~~|20|–––|||
|tf<br>~~ee~~|Fall Time<br>~~ee~~|–––<br>~~ee~~|29|–––|||
|LD<br>~~ee~~|Internal Drain Inductance<br>~~ee~~|~~ee~~|4.5||nH|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>S<br>D<br>G<br>~~08~~|
|LS<br>~~ee~~|Internal Source Inductance<br>~~ee~~|–––<br>~~ee~~|7.5<br>~~ee~~|–––<br>~~ee~~|||
|Ciss|Input Capacitance|–––|480|–––|pF|VGS= 0V<br>VDS= 25V<br>ƒ = 1.0MHz, See Fig. 5<br>©|
|Coss<br>a|Output Capacitance|–––|130|–––|||
|Crss<br>aa|Reverse Transfer Capacitance<br>a|–––|61|–––|||



**Notes:** Repetitive rating;  pulse width limited by max. junction temperature. (See fig. 11) VDD = 25V, starting TJ = 25°C, L = 790µH RG = 25Ω, IAS = 11A. (See Figure 12) ISD ≤ 11A, di/dt ≤ 290A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C 

This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact Uses IRLZ24N data and test conditions. 

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100  TOP           15V vest<br>                   12V<br>                   10V<br>                   8.0V<br>                   6.0V a” —AGniil eet<br>                   4.0V<br>                   3.0V<br> BOTTOM   2.5V Ny oe<br>10 ee? ,Commie<br>7<br>| 4WPAZG fF oP<br>de a<br>1<br>ar 2.5V<br> 20µs PULSE WIDTH<br>0.1 “AntLA aae  T   = 25°CJ<br>0.1 1 10 100<br>V     , Drain-to-Source Voltage (V)DS<br>Fig 1.   Typical Output Characteristics<br>100 ee T  = 25°C ee J SS SS —<br>Saas eeeS>——_oeen<br>T  = 175°CJ<br>10 FEE EEF<br>a<br>Ey, AR ee<br>2/ Poo<br>1<br>Ae<br>ee<br>ppp et ype yp Pp tp<br> V     = 15VDS<br>0.1 LLRE EE cous purse|worn<br>2 3 4 5 6 7 8 9 10<br>V     , Gate-to-Source Voltage (V)GS<br>I   , Drain-to-Source Current (A)D<br>D<br>I   , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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100  TOP           15V vest Hi<br>                   12V<br>                   10V<br>                   8.0V<br>                   6.0V cL ppp CT<br>                   4.0V<br>                   3.0V<br> BOTTOM   2.5V a<br>10 PSet<br>ee eeee<br>||| lgPAT Ateens| i | | | | | | |<br>> A 2.5V A<br>1<br>WY | Titi oT EE TTT<br> 20µs PULSE WIDTH<br>0.1 HMI|LAH  T   = 175°CJ<br>0.1 1 10 100<br>V     , Drain-to-Source Voltage (V)DS<br>I   , Drain-to-Source Current (A)D<br>**----- End of picture text -----**<br>


**Fig 2.** Typical Output Characteristics 

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3.02.5 T PLETTTATTP<br>2.0 OREO 08 OR 8<br>1.5 Fee eee<br>5 a<br>cor ae<br>1.0<br>eee<br>0.5 Petree eee<br>a<br>0.0 P EELEEEEv tov<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>T   , Junction Temperature (°C)J<br>(Normalized)<br>DS(on)<br>R           ,  Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance Vs. Temperature 

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800 15<br>V      = 0V,         f = 1MHzGS I    = 11AD<br>C      = C     + C     ,   C     SHORTEDiss         gs         gd         ds<br>C      = Crss         gd<br>C      = C     + Coss        ds         gd 12<br>600 S Cc s Qoe ee eeee ese\<br>9<br>> oT pp<br>400<br>ss<br>Ne SL NN TaeTT 6 Sanna|| wl<br>200<br>SD ss 3 Pt<br>SE p=" “eee  FOR TEST CIRCUIT<br>0 ee| A 0 JiAnan     SEE FIGURE 13<br>1 10 100 0 4 8 12 16 20<br>V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)G<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>100 1000<br> OPERATION IN THIS AREA LIMITED<br>                       BY RDS(on)<br>He “ ae ee ee<br>100<br>T  = 175°CJ<br>T  = 25°CJ 10µs<br>10<br>Fe pean =s<br>10 100µs<br>PP APs S a<br>1ms<br>1 oe a e A 1 pg  Single Pulse s 10ms<br>fp | | ew iS l<br>0.4 0.8 1.2 1.6 2.0 1 10 100<br>V     , Source-to-Drain Voltage (V)SD V     , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A)D<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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20 TTI vos 7s<br>15 ANE ? (eae<br>-<br>TT OTT |<br>10 CCCP SEE 8 ≤ 1<br>≤ 0.1 %<br>TT IN Pulse Width ys<br>Fig 10a.   Switching Time Test Circuit<br>5<br>VDS<br>SRR ERRRRaTTT NI a<br>90%<br>0 |<br>25 50 75 100 125 150 175 |<br>T   , Case TemperatureC (  C)° |<br>10%<br>P PE EE VGS AY.\« p< >! a ><br>Fig 9.   Maximum Drain Current Vs. td(on) tr td(off) tf<br>Case Temperature<br>Fig 10b.   Switching Time Waveforms<br>10<br>Seer eere erect Sng guss eerie menenmeere<br>D = 0.50<br>S S<br>1 r eerI Ci<br>0.20<br>r 0.10 e<br>0.05<br>ene 0.02 EE P + DM<br>0.01<br>0.1 S       SINGLE PULSE er Sr ey t1<br>(THERMAL RESPONSE) t2<br>SeTFFETs| el eo 1. Duty factor D =  t   / t 1 2<br>0.01 a ee ee ee<br>0.00001 0.0001 0.001 0.01 0.1 1<br>t   , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJC<br>Thermal Response (Z       )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>i<br>Boake 20V<br>tp 0.01Ω<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

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V(BR)DSS<br>~<— tp —><br>/ al<br>/ \<br>IAS<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

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QG<br>—<br>QGS QGD<br>VG<br>ale os yy<br>Charge<br>**----- End of picture text -----**<br>


**Fig 13a.** Basic Gate Charge Waveform 

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140<br>                    I D<br>P| ft tt TOP            4.5A<br>120                    7.8A<br>Kp PN ft BOTTOM    11A<br>PN<br>100 PEN EL peyt<br>NENE<br>80 PNEE NFL EE<br>60 NaPPANN NINN GR Gi | ee eee ee<br>40 PTRAR<br>PAN<br>20 Pi tTTUTORS<br>0  V      = 25V ee DD ee ee  ee<br>25 50 75 100 125 150 175<br>Starting T  , Junction Temperature (°C)J<br>AS<br>E     ,   Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>.3µF<br>i mg<br>ae D.U.T. +-VDS<br>VGS<br>3mA<br>|<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 13b.** Gate Charge Test Circuit 

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D.U.T + Circuit Layout Considerations<br>™    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| - Current Transformer<br>+<br>- - +<br>(0<br>Rg •   dv/dt controlled by Rg +<br>•   Driver same type as D.U.T. -<br>•<br>•   D.U.T. - Device Under Test<br>**----- End of picture text -----**<br>


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Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _t<br>VGS=10V<br>t<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current ii Current di/dt /<br>©) D.U.T. VDS Waveform<br>Diode Recovery<br>dv/dt<br>VDD<br>ma<br>Re-Applied<br>Voltage Body Diode  ae Forward Drop _<br>® Inductor Curent ee ee<br>Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


**Fig 14.** For N-Channel HEXFET ® MOSFETs 

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EXAMPLE: THIS IS AN IRFR120<br>PART NUMBER<br>WITH ASSEMBLY<br>INTERNATIONAL<br>LOT CODE 1234 RECTIFIER IRFU120 DATE CODE<br>ASSEMBLED ON WW 16, 1999 LOGO 916A YEAR 9 =  1999<br>IN THE ASSEMBLY LINE "A" 12 34 WEEK 16<br>LINE A<br>Note: "P" in assembly line position ASSEMBLY<br>indicates "Lead-Free" LOT CODE 7 : |<br>OR<br>PART NUMBER<br>INTERNATIONAL<br>RECTIFIER IRFU120 DATE CODE<br>LOGO TeaR Psi6A P =  DESIGNATES LEAD-FREE<br>12 34 PRODUCT (OPTIONAL)<br>YEAR 9 =  1999<br>ASSEMBLY | : | WEEK 16<br>LOT CODE<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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EXAMPLE: THIS IS AN IRFU120 PART NUMBER<br>INTERNATIONAL<br>WITH ASSEMBLY<br>LOT CODE 5678 RECTIFIER IRFU120 DATE CODE<br>LOGO 919A YEAR 9 =  1999<br>ASSEMBLED ON WW 19, 1999 56 78 WEEK 19<br>IN THE ASSEMBLY LINE "A"<br>LINE A<br>ASSEMBLY<br>Note:  "P" in assembly line  LOT CODE<br>position indicates "Lead-Free"<br>**----- End of picture text -----**<br>


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PART NUMBER<br>INTERNATIONAL gc N<br>RECTIFIER IRFU120 DATE CODE<br>LOGO TEAR P99 P =  DESIGNATES LEAD-FREE<br>56 78 PRODUCT (OPTIONAL)<br>YEAR 9 =  1999<br>ASSEMBLY WEEK 19<br>LOT CODE A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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TR TRR TRL<br>eeoeogeoo\ 4 oeoo/4<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>CCE, GIO)<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>NOTES :<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).<br>3.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>|   13 INCH<br>16 mm<br>mN se] be<br>**----- End of picture text -----**<br>


NOTES : 

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1. OUTLINE CONFORMS TO EIA-481.<br>**----- End of picture text -----**<br>


Data and specifications subject to change without notice. International 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 12/04 

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Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



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