# Power MOSFET, N Channel, 20 V, 6.5 A, 0.03 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:2577180RL/)

**URL**: https://novapart.co/products/IRLMS2002TRPBF/power-mosfet-n-channel-20-v-65-a-003-ohm-sot-23
**SKU**: IRLMS2002TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1910
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:6.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.03ohm; Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 6Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 2W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 6.5A |
| Drain Source On State Resistance | 0.03ohm |
| Gate Source Threshold Voltage Max | 1.2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2577180RL/)

## PD- 95675 IRLMS2002PbF 

## HEXFET ® Power MOSFET 

Ultra Low On-Resistance N-Channel MOSFET Surface Mount Available in Tape & Reel 2.5V Rated Lead-Free 

## **Description** 

**==> picture [202 x 97] intentionally omitted <==**

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A<br>D 1 6 D<br>VDSS = 20V<br>D hoe 2 5 D<br>G 3 4 S R  = 0.030Ω<br>DS(on)<br>mH Ur<br>Top View<br>**----- End of picture text -----**<br>


These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.  This benefit provides the designer with an extremely efficient device for use in battery and load management applications. 

The  Micro6™ package with its customized leadframe produces a HEXFET[®] power MOSFET with RDS(on) 60% less than a similar size SOT-23.  This package is ideal for applications where printed circuit board space is at a premium.   It's unique thermal design and RDS(on)  reduction enables a current-handling increase of nearly 300% compared to the SOT-23. 

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Micro6™<br>**----- End of picture text -----**<br>


|a|**Parameter**<br>a|**Max.**<br>a|**Units**<br>a|
|---|---|---|---|
|VDS<br>~~I~~|Drain- Source Voltage<br>~~I~~|20<br>~~I~~|V<br>~~I~~|
|ID@ TA= 25°C<br>~~I~~<br>~~es~~|Continuous Drain Current, VGS@ 4.5V<br>~~I~~<br>~~a~~<br>~~es~~|6.5<br>~~I~~<br>~~a~~<br>~~es~~|A<br>~~I~~<br>~~es~~|
|ID@ TA= 70°C<br>~~es~~|Continuous Drain Current, VGS@ 4.5V<br>~~es~~|5.2<br>~~es~~||
|IDM<br>~~es~~<br>a|Pulsed Drain Current<br>~~es~~|20<br>~~es~~||
|PD@TA= 25°C<br>~~es~~|Power Dissipation<br>~~es~~|2.0<br>~~es~~<br>~~ee~~|~~es~~<br>~~ee~~|
|PD@TA= 70°C<br>~~Te,~~|Power Dissipation<br>~~Te,~~|1.3<br>~~ee~~<br>~~Te,~~||
|~~oes~~|Linear DeratingFactor<br>~~oes~~|0.016<br>~~oes~~|W/°C<br>~~oes~~|
|VGS<br>~~oes~~|Gate-to-Source Voltage<br>~~oes~~|± 12<br>~~oes~~|V<br>~~oes~~|
|TJ,TSTG<br>~~a~~|Junction and Storage Temperature Range|-55  to + 150|°C|



## **Thermal Resistance** 

|~~es~~|**Parameter**<br>es|**Max.**<br>es<br>~~ee~~|**Units**<br>es|
|---|---|---|---|
|RθJA<br>~~es~~|Maximum Junction-to-Ambient|62.5<br>~~ee~~|°C/W|



1/18/05 

|~~es~~<br>~~a~~<br>~~es~~|**Parameter**<br>~~rs~~<br>|**Min. **<br>~~rs~~<br><br>~~**es**~~|**Typ. **<br>~~rs~~<br><br>~~**es**~~|**Max.**<br>~~rs~~<br>~~Ge~~<br><br>~~ss~~|**Units**<br>~~rs~~<br>~~Ge~~<br><br>~~ss~~|**Conditions**<br>~~rs~~<br>|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~es~~<br>~~a ee~~<br>~~es~~|Drain-to-Source Breakdown Voltage<br>~~rs~~<br>~~ee~~<br>~~rs~~|20<br>~~rs~~<br>~~ee~~<br>~~**es**~~|–––<br>~~rs~~<br>~~ee~~<br>~~**es**~~|–––<br>~~rs~~<br>~~Ge~~<br>~~ee~~<br>~~ss~~<br>~~Gs~~|V<br>~~rs~~<br>~~Ge~~<br>~~ee~~<br>~~ss~~<br>~~Gs~~|VGS= 0V, ID= 250µA<br>~~rs~~<br>~~ee~~|
|∆V(BR)DSS/∆TJ<br>~~es~~|Breakdown Voltage Temp. Coefficient<br>~~rs~~<br>||–––<br>~~**es**~~<br>||0.016<br>~~**es**~~<br>|–––<br>~~ss~~<br>~~Gs~~|V/°C<br>~~ss~~<br>~~Gs~~|Reference to 25°C, ID= 1mA<br>~~,~~|
|RDS(on)<br>~~es~~<br>~~|~~|Static Drain-to-Source On-Resistance<br>~~rs~~<br>~~|~~<br>||–––<br>~~**es**~~<br>~~|~~<br>||––– <br>~~**es** ~~<br>~~|~~<br>|0.030<br> ~~ss~~<br>~~Gs~~<br>~~|~~|Ω<br>~~ss~~<br>~~Gs~~<br>~~|~~|VGS= 4.5V, ID= 6.5A<br>~~|~~<br>~~,~~|
|||–––<br>~~|~~<br>|~~|~~|––– <br>~~|~~<br>~~|~~|0.045<br>~~|~~||VGS= 2.5V, ID= 5.2A<br>~~|~~<br>~~,~~|
|VGS(th)<br>~~a~~<br>~~a~~|Gate Threshold Voltage<br>|<br>~~a~~<br>~~rs~~|0.60<br>|<br>~~se~~|–––<br><br>~~se~~|1.2<br>~~GO~~<br>~~Ge~~|V<br>~~GO~~<br>~~es~~|VDS= VGS, ID= 250µA<br>~~,~~<br>~~GO~~|
|gfs<br>~~a~~|Forward Transconductance<br>~~rs~~|13<br>~~se~~|–––<br>~~se~~|–––<br>~~Ge~~|S<br>~~es~~|VDS= 10V, ID= 6.5A|
|IDSS<br>~~a~~<br>~~ee~~<br>~~oo~~|Drain-to-Source Leakage Current<br>~~rs ~~<br>~~ee~~<br>~~oo~~|–––<br> ~~se~~<br>~~ee~~|–––<br>~~se~~<br>~~ee~~|1.0<br>~~Ge ~~<br>~~ee~~|~~es~~<br>~~ee~~<br>~~PO~~<br>~~oo~~|VDS= 16V, VGS= 0V<br>~~ee~~|
|||–––<br>~~ee~~<br>~~oo~~|–––<br>~~ee~~<br>~~oo~~|25<br>~~ee~~<br>~~oo~~||VDS= 16V, VGS= 0V, TJ= 70°C<br>~~ee~~<br>~~PO~~<br>~~oo~~|
|~~oo~~<br>~~pf}~~|Gate-to-Source Forward Leakage<br>~~oo~~<br>~~ee~~|–––<br>~~oo~~<br>~~ee~~|–––<br>~~oo~~|-100<br>~~oo~~|~~oo~~<br>~~Po~~|VGS= -12V<br>~~oo~~<br>~~Po~~|
||Gate-to-Source Reverse Leakage<br>~~oo~~<br>~~ee~~<br>~~pf}~~|–––<br>~~oo~~<br>~~ee~~<br>{|–––<br>~~oo~~<br>}|100<br>~~oo~~||VGS= 12V<br>~~oo~~<br>~~Po~~|
|Qg<br>~~oo~~<br>~~pf}~~<br>Re|Total Gate Charge<br>~~oo~~<br>~~ee ~~<br>~~pf}~~|–––<br>~~oo~~<br> ~~ee~~<br>{|15<br>~~oo~~<br>}|22<br>~~oo~~|nC<br>~~oo~~<br>~~Po~~|ID= 6.5A<br>VDS= 10V<br>VGS= 5.0V<br>~~oo~~<br>~~Po~~<br>~~@~~|
|Qgs<br>~~pf}~~<br>Re<br>~~ee~~|Gate-to-Source Charge<br>~~pf}~~<br>~~ee~~|–––<br>{|2.2<br>}|3.3|||
|Qgd<br>~~pf}~~<br>Re<br>~~ee~~|Gate-to-Drain("Miller")Charge<br>~~pf}~~<br>~~ee~~|–––<br>{|3.5<br>}|5.3|||
|td(on)<br>~~ee~~<br>~~a~~<br>es|Turn-On Delay Time<br>~~ee~~|–––<br>ee|8.5|–––||VDD= 10V<br>ID= 1.0A<br>RG= 6.0Ω<br>RD= 10Ω<br>~~@~~<br>o)|
|tr<br>a~~es~~<br>es|Rise Time<br>~~es~~|–––<br>~~es~~<br>ee|11<br>~~es~~|–––|||
|td(off)<br>es|Turn-Off Delay Time|–––<br>ee|36|–––|||
|tf<br>es<br>ee|Fall Time<br>ee|–––<br>ee<br>ee|16|–––|||
|Ciss<br>~~ee~~<br>ee|Input Capacitance<br>~~ee~~|–––<br>~~ee~~|1310<br>~~ee~~|–––|pF|VGS= 0V<br>VDS= 15V<br>ƒ = 1.0MHz|
|Coss<br>ee<br>es|Output Capacitance|–––|150|–––|||
|Crss<br>ee<br>es|Reverse Transfer Capacitance|–––|36|–––|||



## **Source-Drain Ratings and Characteristics** 

**Parameter Min. Typ. Max. Units Conditions** ~~es~~ IS ~~ee~~ Continuous Source Current ~~QQ~~ MOSFET symbol D 2.0 (Body Diode) showing  the ISM Pulsed Source Current integral reverse G 20 (Body Diode) p-n junction diode. S ~~$Fss~~ VSD Diode Forward Voltage ~~Qs~~ ––– ~~EH~~ ––– ~~eG~~ 1.2 V ~~|~~ TJ = 25°C, IS = 1.7A, V ~~OG~~ GS = 0V trr Reverse Recovery Time ––– 19 29 ns TJ = 25°C, IF = 1.7A ~~fg~~ a Qrr Reverse Recovery Charge es ––– 13 20 nC di/dt = 100A/µs ® 

® Repetitive rating;  pulse width limited by max. junction temperature. ( See fig. 11 ) 

Surface mounted on FR-4 board,  t ≤ 

Pulse width ≤ 400µs; duty cycle ≤ 

www.irf.com 

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**==> picture [205 x 474] intentionally omitted <==**

**----- Start of picture text -----**<br>
 100<br>VGS<br>TOP 7.50V<br>5.00V<br>4.00V<br>3.50V<br>3.00V LE a |<br>2.50V<br>2.00V<br>BOTTOM 1.50V ye |<br>| APAcnael<br> 10 fect |<br>JAM GE ee ell<br>Y | Liu EET EE<br>1.50V<br>20µs PULSE WIDTH<br>T yrA  | T  = 25J °C<br> 1<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>Fig 1.   Typical Output Characteristics<br> 100<br>ss———<br>ee T  = 25  CJ ° = ee<br>ons<br>T  = 150  CJ °<br>ART)<br> 10 LAL. |<br>+} | —_} —_ —__} —_ J<br>4aPy; A en ee ee ee ee ee<br>Ji of fl UT V      = 15V UE DS<br>tp 20µs PULSE WIDTH<br> 1 PL tt f f fi<br>1.5 2.0 2.5 3.0 3.5<br>V     , Gate-to-Source Voltage (V)GS<br>D<br>I   ,  Drain-to-Source Current (A)<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**==> picture [212 x 472] intentionally omitted <==**

**----- Start of picture text -----**<br>
 100<br>VGS<br>TOP 7.50V<br>5.00V<br>4.00V<br>3.50V<br>3.00V LL a<br>2.50V<br>2.00V<br>BOTTOM 1.50V HY Zeon ||<br>rY/N |<br> 10 fee<br>Ys | |<br>1.50V<br>avail All<br>20µs PULSE WIDTH<br>T  = 150J °C<br> 1 V40ian e ON l ||<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>Fig 2.   Typical Output Characteristics<br>2.0<br>ID = 5.3A<br>Pe LEE<br>1.5 PELLETBE<br>|<br> |<br>1.0 LEETTTEE TEL<br>LT]<br>EEE<br>0.5 ET<br>ELLE E E VGS = 4.5V<br>0.0 AE E<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>T  , Junction TemperatureJ (  C)°<br>D<br>I   ,  Drain-to-Source Current (A)<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance Vs. Temperature 

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**==> picture [212 x 473] intentionally omitted <==**

**----- Start of picture text -----**<br>
2000<br>VGS = 0V, f = 1MHz<br>Ciss = Cgs + Cgd , C      SHORTEDds<br>Crss = Cgd<br>1600 | [| Coss = Cds + Cgd<br>y j<br>P| | | Ciss Hf} ot TTT<br>1200 nPLEl hl ELTl<br>800 PLE ELT<br>400<br>ell<br>Coss<br>0 ttE S Crss s t IHttii<br> 1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>Fig 5.   Typical Capacitance Vs.<br>Drain-to-Source Voltage<br> 100<br>aeeee ee ee ee ee<br>ee ee<br> 10 mee<br>T  = 150  CJ °<br>oe<br>a,<br> 1<br>I7I7_ |<br>== T  = 25  CJ °<br>a=  ==<br>FS<br>F t i V      = 0 V GS<br>0.1<br>0.4 0.6 0.8 1.0 1.2<br>V     ,Source-to-Drain Voltage (V)SD<br>C, Capacitance (pF)<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**==> picture [201 x 470] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>ID =<br>VDS = 10V<br>8 BE ER SEE<br>SEC<br>6 PLPittSERRAELETt EEL| eryYL<br>4 titty tt<br>2<br>SEE? 4EEREEEe<br>0 PVianellitl ete t iy.<br>0 4 8 12 16 20 24<br>Q   , Total Gate Charge (nC)G<br>Fig 6.   Typical Gate Charge Vs.<br>Gate-to-Source Voltage<br> 100<br>OPERATION IN THIS AREA LIMITED<br>BY RDS(on)<br>2 ee el<br>2ee ll<br>Ba<br> 10 ll<br>fr CAST eee eenEr 1ms teeet<br>Co Cis<br> T TAJ = 25  C= 150  C° ° TCC 10ms<br> Single Pulse KE<br> 1<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

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**==> picture [436 x 475] intentionally omitted <==**

**----- Start of picture text -----**<br>
6.0 SSS 0.20 S ooo<br>5.0 0.10<br>NT tT tt NS<br>4.0 N 0.00 aN<br>P SS = PSA<br>Id = 250µA<br>-0.10<br>3.0 aaFRSA eeeNeee = C C PC NS<br>arene -0.20<br>2.0 PEPE = E CKET<br>FEE E CE<br>-0.30<br>1.0 Pt te tT ET TT A<br>FN E ee<br>-0.40<br>0.0 Fi| |t?tT dt ht SN<br>25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>T   , Case TemperatureC (  C)° TJ , Temperature ( °C )<br>Fig 9.   Maximum Drain Current Vs. Fig 10.   Typical Vgs(th) Variance Vs.<br>Case Temperature  Juction Temperature<br> 100<br>Ly D = 0.500.20 Corr em nT<br> 10<br>0.10<br>G 0.050.02 t A PDM<br> 1<br>0.01 t1<br>t2<br>Notes:<br>SINGLE PULSE 1. Duty factor D = t   / t1 2<br>ee Patil (THERMAL RESPONSE) TUT ETT 2. Peak T J = P DM x  Z thJA + TA<br>0.1<br>0.00001 0.0001 0.001 0.01 0.1  1  10  100<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJA<br>(Z        )<br>Thermal Response<br>VGS(th) ,  Variace ( V )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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**----- Start of picture text -----**<br>
0.040 0.10<br>0.035 0.08<br>0.030 0.06<br>0.025 Id = 5.3A 0.04 VGS= 2.5V<br>—j——7—_| | VGS = 4.5V<br>0.020 0.02 eeee ee<br>2.0 3.0 4.0 5.0 6.0 7.0 8.0 0 10 20 30 40<br>VGS, Gate -to -Source Voltage  ( V ) ID, - Drain Current (A )<br> )<br>Ω<br>RDS(on) ,  Drain-to -Source Voltage (<br>)<br>Ω<br>RDS ( on) , Drain-to-Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 12.** Typical On-Resistance Vs. Gate Voltage 

**Fig 13.** Typical On-Resistance Vs. Drain Current 

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™ 

Micro6 (SOT23 6L) Package Outline 

Dimensions are shown in milimeters (inches) 

**==> picture [332 x 179] intentionally omitted <==**

**----- Start of picture text -----**<br>
3.00 (.118 ) -B- LEAD ASSIGNMENTS RECOMMENDED FOOTPRINT<br>2.80 (.111 )<br>D D S 2X  0.95 (.0375 )<br>1.75 (.068 ) wah 6         5         4 6X  (1.06 (.042 )<br>1.50 (.060 ) Pr 3.00 (.118 ) SAA 6         5         4 Freresten<br>-A- 1         2         3 2.60 (.103 ) 1         2         3 2.20 (.087 )<br>D D G<br>0.95 ( .0375 )<br>2X 6X 0.50 (.019 )0.35 (.014 ) 6X  0.65 (.025 )<br>a Hee<br>0.15   (.006 ) M  C A S  B S<br>1.30 (.051 ) — ft 1.45 (.057 ) 0  -10O           O 6X 0.20 (.007 )0.09 (.004 )<br>0.90 (.036 ) 0.90 (.036 )<br>-C- 0.10 (.004 )<br>0.15 (.006 ) 6   SURFACES 0.60 (.023 )<br>     MAX. 0.10 (.004 )<br>NOTES :<br>1.  DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1982.<br>2.  CONTROLLING DIMENSION : MILLIMETER.<br>**----- End of picture text -----**<br>


3.  DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 

## Micro6 (SOT23 6L) Part Marking Information 

**==> picture [322 x 227] intentionally omitted <==**

**----- Start of picture text -----**<br>
|||||||
|---|---|---|---|---|---|
|W =  (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|
|WORK|
|YEAR|Y|WEEK|W|
|Y =  YEAR|2001|1|01|A|
|PART NUMBER|W =  WEEK|2002|2|02|B|
|2003|3|03|C|
|2004|4|04|D|
|2005|5|
|LOT|2006|6|
|CODE|2007|7|
|TOP|
|2008|8|
|2009|9|7|
|2010|0|24|X|
|PART NUMBER CODE REFERENCE:|25|Y|
|26|Z|
|A =  IRLMS1902|
|B =  IRLMS1503|W =  (27-52) IF PRECEDED BY A LETTER|
|C =  IRLMS6702|WORK|
|D =  IRLMS5703|YEAR|Y|WEEK|W|
|E =  IRLMS6802|2001|A|27|A|
|F =  IRLMS4502|2002|B|28|B|
|G =  IRLMS2002|2003|C|29|C|
|H =  IRLMS6803|2004|D|30|D|
|2005|E|
|2006|F|
|2007|G|
|Note: A line above the work week|2008|H|
|(as shown here) indicates Lead-Free.|2009|J|
|2010|K|50|X|
|51|Y|
|52|Z|

**----- End of picture text -----**<br>


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## Micro6 Tape & Reel Information 

Dimensions are shown in milimeters (inches) 

**==> picture [231 x 296] intentionally omitted <==**

**----- Start of picture text -----**<br>
& 6) |<br>8mm<br>Neral<br>4mm FEED DIRECTION<br>NOTES :<br>1.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>|   178.00<br>( 7.008 )<br>    MAX.<br>9.90 ( .390 )<br>8.40 ( .331 )<br>NOTES:<br>**----- End of picture text -----**<br>


**==> picture [114 x 5] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.  CONTROLLING DIMENSION : MILLIMETER.<br>**----- End of picture text -----**<br>


2.  OUTLINE CONFORMS TO EIA-481 & EIA-541. 

This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR’s Web site. Data and specifications subject to change without notice. International 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** Data and specifications subject to change without notice. 01/05 

www.irf.com 

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---

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