# Power MOSFET, P Channel, 30 V, 2.3 A, 0.165 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:1831090RL/)

**URL**: https://novapart.co/products/IRLML9303TRPBF/power-mosfet-p-channel-30-v-23-a-0165-ohm-sot
**SKU**: IRLML9303TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.0670
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:-2.3A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.135; Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.25W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 2.3A |
| Drain Source On State Resistance | 0.165ohm |
| Gate Source Threshold Voltage Max | 1.3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1831090RL/)

PD - 97519B 

## IRLML9303TRPbF 

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HEXFET Power MOSFET<br>**----- End of picture text -----**<br>


|**VDS**|**-30**|**V**|
|---|---|---|
|**VGS Max**|**± 20**|**V**|
|**RDS(on) max**<br>(@VGS= -10V)|**165**|**m**|
|**RDS(on) max**<br>(@VGS= -4.5V)|**270**|**m**|



Micro3[TM] (SOT-23) IRLML9303TRPbF 

## **Application(s)** 

 

## **Features and Benefits** 

|**Features and Benefits**|||
|---|---|---|
|**Features**||**Benefits**|
|Industry-standardpinout||Multi-vendor compatibility|
|Compatible with existingSurface Mount Techniques|results in|Easier manufacturing|
|RoHScompliant containingno lead,no bromide and no halogen||Environmentallyfriendly|
|MSL1, Consumerqualification||Increased reliability|



## **Absolute Maximum Ratings** 

|**Symbol**|**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VDS|Drain-Source Voltage|-30|V|
|ID@ TA= 25°C|Continuous Drain Current, VGS@ 10V|-2.3|A|
|ID@ TA= 70°C|Continuous Drain Current, VGS@ 10V|-1.8||
|IDM|Pulsed Drain Current|-12||
|PD@TA= 25°C|Maximum Power Dissipation|1.25|W|
|PD@TA= 70°C|Maximum Power Dissipation|0.80||
||Linear DeratingFactor|0.01|W/°C|
|VGS|Gate-to-Source Voltage|± 20|V|
|TJ,TSTG|Junction and Storage Temperature Range|-55  to + 150|°C|



_ORDERING INFORMATION:_ 

_See detailed ordering and shipping information on the last page of this data sheet._ 

Notes through are on page 10 www.irf.com 

1 

03/09/12 

## **Electric Characteristics @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**|**Parameter**|**Min. **<br>~~Ps~~|**Typ. **<br>~~GD~~|**Max. **<br>~~GD~~|**Units**<br>~~I~~|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~es~~|-30<br>~~es~~<br>~~Ps~~<br>~~rs~~|–––<br>~~es~~<br>~~GD~~|–––<br>~~es~~<br>~~GD~~<br>~~Gs~~|V<br>~~es~~<br>~~I~~<br>~~Gs~~|VGS= 0V, ID= -250μA<br>~~es~~<br>~~QO~~|
|V(BR)DSS/TJ|Breakdown Voltage Temp. Coefficient<br>~~es~~|–––<br>~~Ps ~~<br>~~es~~<br>~~rs~~|-3.7<br> ~~GD~~<br>~~es~~|–––<br>~~GD ~~<br>~~es~~<br>~~Gs~~<br>~~LE~~|mV/°C<br> ~~I~~<br>~~es~~<br>~~Gs~~<br>~~LE~~|Reference to 25°C, ID= -1mA<br>~~es~~<br>~~QO~~<br>~~LE~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~es~~<br>~~Se~~|–––<br>~~es~~<br>~~rs~~<br>~~Se~~|135<br>~~es~~<br>~~Se~~|165<br>~~es~~<br>~~Gs~~<br>~~Se~~<br>~~LE~~|m<br>~~es~~<br>~~Gs~~<br>~~Se~~<br>~~LE~~<br>~~GO~~|VGS= -10V,ID= -2.3A<br>~~es~~<br>~~QO~~<br>~~Se~~<br>~~LE~~|
|||–––<br>~~Se~~<br>~~Rs Gn~~|220<br>~~Se~~<br>~~ft~~<br>~~Gn~~|270<br>~~Se~~<br>~~LE~~<br>~~ft~~<br>~~GO~~||VGS= -4.5V, ID= -1.8A<br>~~Se~~<br>~~LE~~|
|VGS(th)|Gate Threshold Voltage<br>~~es~~|-1.3<br>~~es~~<br>~~Rs Gn~~<br>~~|~~|–––<br>~~es~~<br>~~Gn~~<br>~~|~~|-2.4<br>~~LE~~<br>~~es~~<br>~~GO~~<br>~~EE~~|V<br>~~LE~~<br>~~es~~<br>~~GO~~<br>~~EE~~|VDS= VGS, ID= -10μA<br>~~LE~~<br>~~es~~<br>~~EE~~|
|IDSS|Drain-to-Source Leakage Current<br>~~EE~~|–––<br>~~Rs Gn~~<br>~~EE~~<br>~~|~~|–––<br>~~Gn ~~<br>~~EE~~<br>~~|~~|1.0<br> ~~GO~~<br>~~EE~~<br>~~EE~~|μA<br>~~GO~~<br>~~EE~~<br>~~EE~~|VDS= -24V, VGS= 0V<br>~~EE~~<br>~~EE~~|
|||–––<br>~~EE~~<br>~~|~~|–––<br>~~EE~~<br>~~|~~|150<br>~~EE~~<br>~~EE~~||VDS= -24V, VGS= 0V, TJ= 125°C<br>~~EE~~<br>~~EE~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~a~~<br>~~es~~|–––<br>~~|~~<br>~~a~~|–––<br>~~|~~<br>~~a~~|-100<br>~~EE~~<br>~~a~~|nA<br>~~EE~~<br>~~a~~<br>~~GO~~|VGS= -20V<br>~~EE~~<br>~~a~~|
||Gate-to-Source Reverse Leakage<br>~~a~~<br>~~es~~|–––<br>~~a~~<br>~~Gs~~|–––<br>~~a~~<br>~~GO~~|100<br>~~a~~<br>~~GO~~||VGS= 20V<br>~~a~~|
|RG|Internal Gate Resistance<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~Gs~~<br>~~Gs~~|21<br>~~es~~<br>~~GO~~<br>~~GO~~|–––<br>~~es~~<br>~~GO~~<br>~~GO~~|<br>~~es~~<br>~~GO~~<br>~~GO~~|~~es~~|
|gfs|Forward Transconductance<br>~~es~~|2.3<br>~~Gs ~~<br>~~es~~<br>~~Gs~~<br>~~es~~|–––<br> ~~GO~~<br>~~es~~<br>~~GO~~<br>~~es~~|–––<br>~~GO~~<br>~~es~~<br>~~GO~~|S<br>~~GO~~<br>~~es~~<br>~~GO~~|VDS= -10V, ID=-2.3A<br>~~es~~|
|Qg|Total Gate Charge<br>~~es~~<br>~~es~~|–––<br>~~Gs ~~<br>~~es~~<br>~~es~~<br>~~es~~<br>|2.0<br> ~~GO~~<br>~~es~~<br>~~es~~<br>~~es~~|–––<br>~~GO~~<br>~~es~~|nC<br>~~GO~~|VDS=-15V<br>VGS= -4.5V<br>ID= -2.3A<br>@<br>@|
|Qgs|Gate-to-Source Charge<br>~~es~~<br>~~es~~<br>~~es~~|–––<br>~~es ~~<br>~~es~~<br>~~es~~<br>~~**es**~~|0.57<br> ~~es~~<br>~~es~~<br>~~es~~|–––<br>~~es~~|||
|Qgd|Gate-to-Drain("Miller")Charge<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~**es**~~|1.2<br>~~es~~<br>~~es~~|–––|||
|td(on)|Turn-On DelayTime<br>~~es ~~<br>~~es~~|–––<br>~~es ~~<br> ~~**es**~~<br>~~es~~|7.5<br> ~~es~~<br>~~es~~<br>~~es~~|–––|ns|VDD=-15V<br>VGS= -4.5V<br>RG= 6.8<br>ID= -1.0A<br>@<br>@|
|tr|Rise Time<br> <br>~~es~~<br>~~es~~|–––<br> ~~**es**~~<br>~~es~~<br>~~es~~<br>~~es~~|14<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~|–––<br>~~es~~|||
|td(off)|Turn-Off DelayTime<br>~~es~~|–––<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~|9.0<br>~~es~~<br>~~es~~<br>~~es~~|–––<br>~~es~~|||
|tf|Fall Time<br>~~ee~~|–––<br>~~es ~~<br>~~ee~~<br>~~es~~<br>~~es~~|8.6<br> ~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|||
|Ciss|Input Capacitance<br>~~ee~~<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~|160<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~es~~|pF|VGS= 0V<br>VDS= -25V<br>ƒ= 1.0KHz|
|Coss|Output Capacitance<br>~~es~~|–––<br>~~es ~~<br>~~es~~<br>~~es~~<br>~~es~~|39<br> ~~ee~~<br>~~es~~<br>~~ee~~|–––<br>~~es~~|||
|Crss|Reverse Transfer Capacitance<br>~~es~~|–––<br>~~es ~~<br>~~es~~<br>~~es~~|25<br> ~~ee~~<br>~~es~~|–––<br>~~es~~|||



## **Source - Drain Ratings and Characteristics** 

|**Symbol**<br>~~GO~~|**Parameter**<br>~~GO~~|**Min. **<br>~~GO~~|**Typ. **<br>~~GO~~<br>~~GO~~|**Max. **<br>~~GO~~<br>~~GO~~|**Units**<br>~~GO~~<br>~~GO~~|**Conditions**<br>~~GO~~|
|---|---|---|---|---|---|---|
|IS|Continuous Source Current<br>(Body Diode)|–––|–––<br>~~GO ~~|-1.3<br> ~~GO~~|A<br>~~GO~~|G<br>D<br>S<br>MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.|
|ISM|(Body Diode)<br>Pulsed Source Current<br>(Body Diode)|–––|–––|-12|||
|VSD|(Body Diode)<br>Diode Forward Voltage<br>~~nn~~|–––<br>~~nn~~|–––<br>~~ee~~|-1.2|V|TJ= 25°C, IS= -1.3A, VGS= 0V<br>pn junction diode.|
|trr|Reverse RecoveryTime<br>~~nn~~<br>~~ee~~|–––<br>~~nn~~<br>~~es~~|12<br>~~ee~~<br>~~ee~~|18|ns|di/dt = 100A/μs<br>TJ= 25°C, VR= -24V, IF=-1.3A<br>~~@~~|
|Qrr|Reverse RecoveryCharge<br>~~nn~~<br>~~ee~~|–––<br>~~nn~~<br>~~es~~|5.3<br>~~ee~~<br>~~ee~~|8.0|nC||



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100<br>VGS<br>60μs PULSE WIDTH TOP           -10V<br>Tj = 25°C a -4.5V-3.7V<br>-3.5V<br>10 ll -3.3V<br>-3.0V<br>-2.7V<br>| OL BOTTOM -2.5V<br>1<br>Bt eH<br>0.1 BE ee ||<br>0.01 tI Te -2.5V Co Col<br>0.1 1 10 100<br>-VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br>100<br>Ee ee ee ee es ee<br>10<br>Ee ee ee, Ge es<br>TJ = 150°C<br>1 T = 25°C<br>J<br>Ee ee hi<br>VDS = -15V<br>60μs PULSE WIDTH<br>0.1<br>1 2 3 4 5 6 7<br>-VGS, Gate-to-Source Voltage (V)<br>-ID, Drain-to-Source Current (A)<br>-ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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100<br>60μs PULSE WIDTH VGS<br>TOP           -10V<br>Tj = 150°C -4.5V<br>a -3.7V<br>-3.5V<br>10 || -3.3V<br>-3.0V<br>-2.7V<br>|} | A BOTTOM -2.5V<br>1<br>Axe ee ee<br>-2.5V<br>0.1 sh<br>0.01 aCo ee COCee ll<br>0.1 1 10 100<br>-VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>1.6<br>ID = -2.3A<br>VGS = -10V<br>1.4<br>1.2<br>p<br>1.0<br>0.8<br>0.6<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>-ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance vs. Temperature 

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1000 14.0<br>VCGS  iss   = C = 0V,       f = 1 MHZgs + Cgd,  C ds SHORTED ID= -2.3A<br>C  = C 12.0<br>rss   gd<br>Coss   = Cds + Cgd VDS= -24V<br>10.0 V DS = -15V<br>C<br>iss VDS= -6.0V<br>To Se<br>8.0<br>C<br>100 oss<br>EMA] C }§ 6.0 =[-A<br>rss<br>4.0<br>PANN] LL<br>PIPE<br>a 2.0 Eo<br>LEHANE<br>10 LH 6 0.0 Ze<br>1 10 100 0 1 2 3 4 5<br>-VDS, Drain-to-Source Voltage (V)  QG,  Total Gate Charge (nC)<br>C, Capacitance (pF)<br>-VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage 

**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

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100<br>10<br>TJ = 150°C<br>ee e ae<br>T = 25°C<br>J<br>1<br>ny aAe eere<br>V GS  = 0V<br>0.1<br>0.3 0.5 0.7 0.9 1.1 1.3<br>-VSD, Source-to-Drain Voltage (V)<br>-ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


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100<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>10<br>100μsec<br>1msec<br>10msec<br>1<br>BREA164OOM A<br>DC<br>E AH SACHES EH<br>0.1<br>TA = 25°C<br>Tj = 150°C<br>Single Pulse<br>0.01<br>0.01 0.1 1 10 100<br>-VDS, Drain-to-Source Voltage (V)<br>-ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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2.5<br>D.U.T.<br>2.0 L<br>NJ Re -<br>+<br>1.5 PS ) o—o Vpp<br>) + -Ves<br>Pulse Width  ys<br>1.0 <br>0.5 Fig 10a.   Switching Time Test Circuit<br>td(on) tr td(off) tf<br>0.0 Pf | fd VGS e| n . [ON a<br>25 50 75 100 125 150 10%<br> TA , Ambient Temperature (°C)<br>|<br>Fig 9.   Maximum Drain Current vs. \ / VV<br> Ambient Temperature 90%<br>VDS<br>Fig 10b.   Switching Time Waveforms<br>1000<br>100 a| |ee ee ee eel<br>D = 0.50<br>iz 0.20 a comer tt<br>10 eg 0.10 Sst<br>0.05<br>0.02<br>1 Po 0.01 eeei<br>p+ | | ety tt EP EE<br>0.1 2a orem | Notes:<br>SINGLE PULSE<br>1. Duty Factor D = t1/t2<br>Ee ee ll ( THERMAL RESPONSE ) Sr ee ee 2. Peak Tj = P dm x Zthja + T A |<br>a ee ee ee |<br>0.01<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10<br>t1 , Rectangular Pulse Duration (sec)<br>-ID,  Drain Current (A)<br>Thermal Response ( Z thJA ) °C/W<br>**----- End of picture text -----**<br>


**Fig 11.** Typical Effective Transient Thermal Impedance, Junction-to-Ambient 

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500 600<br>ID = -2.3A<br>Toh. 500 Ee<br>400<br>Vgs = -4.5V<br>400<br>oor,<br>300<br>300<br>200 TJ = 125 ° C<br>A 200 ee<br>Vgs = -10V<br>100 RRS Et<br>T = 25°C 100<br>J<br>oer) —<br>0 0<br>|  SE=<br>2 4 6 8 10 12 14 16 18 20 0 5 10 15 20<br>-ID, Drain Current (A)<br>-VGS, Gate -to -Source Voltage  (V)<br>Fig 12.    Typical On-Resistance vs. Fig 13.    Typical On-Resistance vs.<br>Gate Voltage Drain Current<br>Id<br>Vds<br>Vgs<br>L<br>VCC<br>DUT<br>0<br>201 K SS<br>Vgs(th)<br>Qgodr Qgd Qgs2 Qgs1<br>) <br>RDS(on),  Drain-to -Source On Resistance (m<br>)<br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


**Fig 14a.** Gate Charge Waveform 

**Fig 14b.** Gate Charge Test Circuit 

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2.2 1000<br>2.0<br>800<br>SAUTEL TET) = (TTT<br>1.8<br>HES ID = -10μA 600 (MITITTITT<br>1.6<br>a a  VMN<br>400<br>1.4<br>oN<br>CoOOCON 200 =<br>1.2 PEATE CIM<br>1.0 0<br>-75 -50 -25 0 25 50 75 100 125 150 1E-7 1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0<br>TJ , Temperature ( °C ) Time (sec)<br>-VGS(th), Gate threshold Voltage (V)<br>Single Pulse Power (W)<br>**----- End of picture text -----**<br>


**Fig 15.** Typical Threshold Voltage vs. Junction Temperature 

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**----- Start of picture text -----**<br>
Typical Power vs. Time<br>**----- End of picture text -----**<br>


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DIMENSIONS<br>6 A 5 MILLIMETERS INCHES<br>D SYMBOL MIN MAX MIN MAX<br>& A Poof<br>A es A 0.89 1.12<br>| | A2 C po A1 0.01 es 0.10 0.0004<br>3 E A2 0.88 1.02<br>AT 6 E1 | 1 2 on 0.15 [0.006] M C B A [ert 0.10 [0.004] I C ;tf01035 bc 0.300.08 0.500.20 0.012 | 0.0040.0200.040<br>Tp oy TW—_§i | A1 | a | | 3X tao b (|_|fF D 2.80 3.04 [|] [0.003] [|] [0.008]<br>An 5 B O e e | NOTES: 0.20 [0.008] M C B A 8s E 2.10 2.64 ott0 | 0. 0. 1 20 00<br>oh e1 0.047 E1 1.20 1.40<br>| e 0.95 BSC 0.037 |  0.055BSC  |<br>| e1 1.90 BSC 0.075 BSC<br>| L 0.40 0.60<br>H A 4 F L1 Recommended Footprint es L1 0.54 | REF 0.016 | 0.024 REF<br>L2 0.25 BSC BSC<br>c 0.972 0 8 0 8<br>; J a e a<br>x v [ L2 f 0.802 oye — 0.950 2.742<br>3X L 1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994<br>2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>“  7 a h | 3. CONTROLLING DIMENSION: MILLIMETER.4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.<br>L 1.900 5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.<br>g 6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES<br>  NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS<br>  OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.<br>A 7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.<br>8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.<br>**----- End of picture text -----**<br>


## Micro3 (SOT-23/TO-236AB) Part Marking Information 

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DATE CODE MARKING INSTRUCTIONS<br>**----- End of picture text -----**<br>


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LOT CODE 2013 | 2003 3 03 C<br>2014 | 2004 04 D<br> REFERENCE 2015 | 2005 5<br>§ = IRLML6244 core ope °<br>T= IRLML6246 pois | 20088<br>UU = IRLML6344 2019 | 2009 9<br>V = IRLML6346 3020 | 2010 0 24 "<br>= IRFML8244 25 Y<br>=X = IRLML2244 26 !<br>Y= IRLML2246 WW = (27-52) IF PRECEDED BY<br>2 = IRFML9244<br>WORK<br>YEAR Y WEEK<br>201T | 2001 A 7 A<br>2012 | 2002 B 28 B<br>2013 | 2003 Cc 29 c<br>2014 | 2004 30 D<br>20152016 || 2006 2005 F<br>2017 | 2007 G<br>2018 | 2008 H<br> workLead week- Free. 20192020 || 2009 2010 JKk 50 "<br>51 Y<br>52 !<br>"<br>**----- End of picture text -----**<br>


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8 

##  

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2.05 ( .080 ) 1.6 ( .062 ) 1.32 ( .051 )<br>1.95 ( .077 ) 4.1 ( .161 ) 1.5 ( .060 ) 1.85 ( .072 ) 1.12 ( .045 )<br>3.9 ( .154 ) 1.65 ( .065 )<br>60 TR 666 6% 6 64-4 3.55 ( .139 ) | 8.3 ( .326 )<br>3.45 ( .136 ) 7.9 ( .312 )<br>\EIEIERIE IE IE}<br>FEED DIRECTION 4.1 ( .161 )<br>—- 4 4 3.9 ( .154 ) ; 1.1 ( .043 )0.9 ( .036 ) a a 0.35 ( .013 )0.25 ( .010 )<br>  178.00<br>( 7.008 )<br>    MAX.<br>9.90 ( .390 )<br>aN 8.40 ( .331 ) = i e<br>NOTES:<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>2.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>**----- End of picture text -----**<br>


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|**Orderable part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Note**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|IRLML9303TRPbF|Micro3(SOT-23)|Tape and Reel|3000||



## **Qualification information**[†] 

|**Qualification information**[†]|**Qualification information**[†]|**Qualification information**[†]|
|---|---|---|
|Qualification level|Cons umer††<br>(per JEDE C JE S D47F †††guidelines  )||
|Moisture Sensitivity Level|Micro3 (SOT-23)|MS L1<br>(per IPC/JEDE C J-S TD-020D†††)|
|RoHS compliant|Yes||



; Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Ho Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ theo Applicable version of JEDEC standard at the time of product release. 

Repetitive rating;  pulse width limited by max. junction temperature. Pulse width  400μs; duty cycle  2%. Surface mounted on 1 in square Cu board. Refer to application note #AN-994. 

Data and specifications subject to change without notice. 

**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 03/12 

www.irf.com 

10 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRLML9303TRPBF/power-mosfet-p-channel-30-v-23-a-0165-ohm-sot)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irlml9303trpbf/mosfet-diode-p-ch-30v-2-3a-sot23/dp/1831090RL)
---

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