# Power MOSFET, P Channel, 12 V, 4.3 A, 0.05 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:1463267/)

**URL**: https://novapart.co/products/IRLML6401TRPBF/power-mosfet-p-channel-12-v-43-a-005-ohm-sot-23
**SKU**: IRLML6401TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.0960
**Stock**: 1000+
**Lead Time**: 148 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:-4.3A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.05ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-550mV; Power Dissi

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | HEXFET Series |
| Qualification | - |
| Power Dissipation | 1.3W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 12V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 4.3A |
| Drain Source On State Resistance | 0.05ohm |
| Gate Source Threshold Voltage Max | 550mV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1463267/)

- ~~e~~ Ultra Low On-Resistance HEXFET Power MOSFET ~~e~~ P-Channel MOSFET ~~e~~ SOT-23 Footprint e Low Profile (<1.1mm) G 1 e Available in Tape and Reel VDSS = -12V 3 D 

- ~~e~~ Fast Switching ~~e~~ 1.8V Gate Rated S 2 RDS(on) = 0.05 Ω ~~e~~ Lead-Free e RoHS Compliant, Halogen-Free 

These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET[® ] power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management. 

A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint.  This package, dubbed the Micro3 ™ , is ideal for applications where printed circuit board space is at a premium.  The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available. 

Micro3 ™ 

|a<br>~~es~~|**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VDS<br>~~es~~|Drain- Source Voltage|-12|V|
|ID@ TA= 25°C<br>~~es~~<br>~~ee~~|Continuous Drain Current, VGS@ -4.5V<br>~~ee~~|-4.3<br>~~ee~~|A|
|ID@ TA= 70°C<br>~~ee~~<br>~~ee~~|Continuous Drain Current, VGS@ -4.5V<br>~~ee~~<br>~~ee~~|-3.4<br>~~ee~~<br>~~ee~~||
|IDM<br>~~es~~|Pulsed Drain Current<br>~~es~~|-34<br>~~es~~||
|PD@TA= 25°C<br>~~>~~|Power Dissipation<br>~~>~~|1.3<br>~~>~~|a|
|PD@TA= 70°C<br>~~>~~<br>~~es~~|Power Dissipation<br>~~>~~|0.8<br>~~>~~||
|~~es~~<br>~~es~~|Linear DeratingFactor<br>~~©~~|0.01|W/°C|
|EAS<br>~~es~~<br>~~es~~<br>~~es~~|Single Pulse Avalanche Energy<br>~~©~~|33|mJ|
|VGS<br>~~es~~<br>~~es~~<br>~~es~~|Gate-to-Source Voltage<br>~~©~~|± 8.0|V|
|TJ,TSTG<br>~~es~~<br>~~es~~|Junction and Storage Temperature Range|-55  to + 150|°C|



## **Thermal Resistance** 

||**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RθJA|Maximum Junction-to-Ambient|75|100||



## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|~~es~~|||||||
|---|---|---|---|---|---|---|
|~~es~~|**Parameter**|**Min. **|**Typ. **|**Max. **|**Units**|**Conditions**|
|V(BR)DSS<br>~~es~~<br>~~a~~|Drain-to-Source Breakdown Voltage|-12|–––|–––|V|VGS= 0V, ID= -250μA|
|ΔV(BR)DSS/ΔTJ <br>~~a~~|Breakdown Voltage Temp. Coefficient<br>~~a~~|––– <br>~~a~~|-0.007<br>~~a~~|-0.007 –––<br>~~a~~|V/°C<br>~~a~~|Reference to 25°C, ID= -1mA<br>~~a~~|
|RDS(on)<br>~~a~~|Static Drain-to-Source On-Resistance|–––<br>~~|~~|––– <br>~~——~~<br>~~||~~|0.050<br>~~——~~<br>~~|~~|Ω<br>~~|~~<br>~~|~~<br>~~of~~|VGS= -4.5V, ID= -4.3A<br>~~|~~<br>~~©~~<br>~~®~~|
|||~~|~~<br>~~|~~|––– <br>~~——~~<br>~~||~~<br>~~| of~~|0.085<br>~~——~~<br>~~|~~<br>~~of~~||VGS= -2.5V, ID= -2.5A<br>~~|~~<br>~~©~~<br>~~®~~<br>~~of~~<br>~~@~~|
|||~~|~~<br>~~|~~|––– <br>~~| |~~<br>~~| of~~|0.125<br>~~|~~<br>~~of~~|~~|~~<br>~~of~~|VGS= -1.8V, ID= -2.0A<br>~~®~~<br>~~of~~<br>~~@~~|
|VGS(th)<br>~~a~~<br>~~Re~~|Gate Threshold Voltage<br>~~Re~~|-0.40 <br>~~|~~|-0.55 <br>~~| of~~|-0.95<br>~~of~~|V<br>~~of~~|VDS= VGS, ID= -250μA<br>~~of~~<br>~~@~~|
|gfs<br>~~Re~~<br>~~a~~|Forward Transconductance<br>~~Re~~<br>~~ee~~|8.6<br>~~ee~~|–––<br>~~ee~~|–––<br>~~ee~~|S<br>~~ee~~|VDS= -10V, ID= -4.3A|
|IDSS<br>~~Re~~<br>~~a~~|Drain-to-Source Leakage Current<br>~~Re~~<br>~~ee~~<br>~~|~~|–––<br>~~ee~~<br>~~||~~|–––<br>~~ee~~|-1.0<br>~~ee~~|μA<br>~~ee~~|VDS= -12V,VGS= 0V|
|||–––<br>~~ee~~<br>~~||~~|–––<br>~~ee~~|-25<br>~~ee~~||VDS= -9.6V, VGS= 0V, TJ= 55°C|
|~~a ~~<br>~~ee~~|Gate-to-Source Forward Leakage<br> ~~ee~~<br>~~|~~<br>~~ee~~|–––<br>~~ee~~<br>~~| |~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|-100<br>~~ee~~<br>~~ee~~|nA<br>~~ee~~<br>~~ee~~|VGS= -8.0V<br>~~ee~~|
||Gate-to-Source Reverse Leakage<br>~~ee~~<br>~~Pp~~|–––<br>~~ee~~<br>~~Pp~~|–––<br>~~ee~~<br>~~Pp~~|100<br>~~ee~~<br>~~Pp~~||VGS= 8.0V<br>~~ee~~|
|Qg<br>~~a~~|Total Gate Charge<br>|–––<br>|10<br>|15|nC|ID= -4.3A<br>VDS= -10V<br>VGS= -5.0V<br>~~@~~|
|Qgs<br>~~Ge~~<br>~~es~~|Gate-to-Source Charge<br>~~Ge~~|–––<br>~~Ge~~|1.4<br>~~Ge~~|2.1|||
|Qgd<br>~~es~~|Gate-to-Drain("Miller")Charge|–––|2.6|3.9|||
|td(on)<br>~~es~~<br>~~a~~|Turn-On DelayTime<br>|–––<br>|11<br>|–––<br>|ns|VDD= -6.0V<br>ID= -1.0A<br>RD= 6.0Ω<br>RG= 89Ω<br>~~@~~<br>@|
|tr<br>~~Pe~~|Rise Time<br>~~Pe~~|–––<br>~~Pe~~|32<br>~~Pe~~|–––<br>~~Pe~~|||
|td(off)<br>~~i~~|Turn-Off DelayTime|–––|250|–––|||
|tf<br>~~a~~<br>~~ee~~|Fall Time<br>~~ee~~|–––|210|–––|||
|Ciss<br>~~ee~~<br>~~es~~|Input Capacitance<br>~~ee~~<br>|–––<br>|830<br>|–––<br>|pF|VGS= 0V<br>VDS= -10V<br>ƒ = 1.0MHz|
|Coss<br>~~ee~~<br>~~es~~|Output Capacitance<br>~~ee~~<br>|–––<br>|180<br>|–––<br>|||
|Crss<br>~~ee~~<br>~~es~~|Reverse Transfer Capacitance<br>~~ee~~<br>|–––<br>|125<br>|–––<br>|||



## **Source-Drain Ratings and Characteristics** 

|~~>~~<br>~~SSS~~<br>~~Se~~|**Parameter**<br>~~>~~<br>~~SSS~~|**Min. **<br>~~>~~<br>~~SSS~~|**Typ. **<br>~~>~~<br>~~SSS~~|**Max.**<br>~~>~~<br>~~SSS~~|**Units**<br>~~SSS~~|**Conditions**<br>~~&~~|
|---|---|---|---|---|---|---|
|IS<br>~~>~~<br>~~SSS~~<br>~~Se~~|Continuous Source Current<br>(BodyDiode)<br>~~>~~<br>~~SSS~~|–––<br>~~>~~<br>~~SSS~~|–––<br>~~>~~<br>~~SSS~~|-1.3<br>~~>~~<br>~~SSS~~|~~SSS~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunction diode.<br>TJ= 25°C, IS= -1.3A, VGS= 0V<br>S<br>D<br>G<br>~~&~~<br>®|
|ISM<br>~~SSS~~<br>~~Se~~|Pulsed Source Current<br>(BodyDiode)<br>~~SSS~~|–––<br>~~SSS~~|–––<br>~~SSS~~|-34<br>~~SSS~~|||
|VSD<br>~~SSS~~<br>~~Se~~|Diode Forward Voltage<br>~~SSS~~|–––<br>~~SSS~~|–––<br>~~SSS~~|-1.2<br>~~SSS~~|V<br>~~SSS~~||
|trr<br>~~SSS~~<br>~~Se~~<br>~~es~~<br>~~Rs~~|Reverse RecoveryTime<br>~~SSS~~<br>~~es~~|–––<br>~~SSS~~<br>~~es~~|22<br>~~SSS~~<br>~~es~~|33<br>~~SSS~~<br>~~es~~|ns<br>~~SSS~~<br>~~es~~|TJ= 25°C, IF= -1.3A<br>di/dt = -100A/μs<br>~~&~~<br>®|
|Qrr<br>~~SSS~~<br>~~Se~~<br>~~es~~<br>~~Rs~~|Reverse RecoveryCharge<br>~~SSS~~<br>~~es~~|–––<br>~~SSS~~<br>~~es~~|8.0<br>~~SSS~~<br>~~es~~|12<br>~~SSS~~<br>~~es~~|nC<br>~~SSS~~<br>~~es~~||



® Repetitive rating;  pulse width limited by max. junction temperature. 

@® Pulse width ≤ 300μs; duty cycle ≤ 2%. Starting TJ = 25°C, L = 3.5mH 

RG = 25 Ω , IAS = -4.3A. 

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100 100<br>VGS VGS<br>TOP          -7.0V TOP          -7.0V<br>                  -5.0V                   -5.0V<br>nace                   -4.5V Pe                   -4.5V<br>10                   -3.0V                   -2.5V 10                   -3.0V -2.5V<br>- 1.8V -1.8V<br>                 -1.5V                   -1.5V<br>BOTTOM -1.0V BOTTOM -1.0V<br>pgraiiimmmnni| Moon<br>1 CA | 1 Zoo|<br>-1.0V<br>Saeeete eee) -1.0V a || Pi<br>nL ere 200 | |<br>0.1 SED! eat 0.1<br>ese et een eel TE<br>20μs PULSE WIDTH 20μs PULSE WIDTH<br>0.01 Ft Et Tj = 25°C Baalill 0.01 | ECT Tj = 150°C Baalill<br>0.1 1 10 100 0.1 1 10 100<br>-VDS, Drain-to-Source Voltage (V) -VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>100.0 2.0 ID = -4.3A<br>a es es es es<br>SS T = 25°C PEEP<br>J<br>Ff ee 1.5 PEELE EEE<br>| eee ee<br>T = 150°C<br>J<br>10.0 i ae PEELE EET<br>1.0<br>A re ee ee He<br>7 a te<br>1.0 yh | S| | Cf | aun<br>0.5<br>Eeaes es V DS  es = -12V es ELE EEE<br>a 20μs PULSE WIDTH TET VGS = -4.5V<br>0.1 0.0<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>1.0 1.5 2.0 2.5 3.0 3.5 4.0 T  , Junction TemperatureJ (  C)°<br>-VGS, Gate-to-Source Voltage (V)<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>-ID, Drain-to-Source Current (A)<br>)<br>(Α<br>-ID, Drain-to-Source Current<br>-ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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1200 VGS   = 0V,       f = 1 MHZGS   = 0V,       f = 1 MHZ = 0V,       f = 1 MHZ 10 ID = -4.3A<br>T_T C iss     = C gs  + C gd ,   C ds     SHORTED PF, fd V DS =-10V |<br>1000 Crss    = Cgd rss    = Cgd   = Cgd gd  8 | | | | | ai<br>—— C oss    = C ds  + C gd [|<br>Ciss<br>800 ea 6<br>600<br>Se |<br>4<br>400<br>ee ener aan<br>Coss<br>ne ee | Saal<br>Crss 2<br>200<br>SH 14<br>0 ennene | 0 P+yYitt| t|ttl.<br>1 10 100 0 4 8 12 16<br>VDS, Drain-to-Source Voltage (V) Q   , Total Gate Charge (nC)G<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 100  1000<br>OPERATION IN THIS AREA LIMITED<br>BY R<br>DS(on)<br>ee ee  100 2<br> 10<br>T  = 150  CJ ° 10us<br>=. — — — esata ME<br>H+ FF +} ° —_ + + J  10 eeSn 100us ell<br>T  = 25  C J<br>1ms<br> 1 Pi Af, | | | Batts Sect<br>SSE  1 ll 10ms<br> T  T CJ = = 150  C  25  C° ° ry a<br>0.1 PTTL V      = 0 V GS 0.1 a  Single Pulse LL Saari aiill<br>0.2 0.6 1.0 1.4 1.8 0.1  1  10  100<br>-V     ,Source-to-Drain Voltage (V)SD -V     , Drain-to-Source Voltage (V)DS<br>GS<br>-V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D-<br>SD<br>-I     , Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


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1200<br>VGS   = 0V,       f = 1 MHZGS   = 0V,       f = 1 MHZ = 0V,       f = 1 MHZ<br>T_T C iss     = C gs  + C gd ,   C ds     SHORTED<br>1000 Crss    = Cgd rss    = Cgd   = Cgd gd<br>—— C oss    = C ds  + C gd<br>Ciss<br>800 ea<br>600<br>Se |<br>400<br>ee ener<br>Coss<br>ne ee |<br>Crss<br>200<br>SH<br>ennene |<br>0<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

**==> picture [433 x 475] intentionally omitted <==**

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5.0 80<br>ID<br>Pt | tet tt yy Kf Lf TOP -1.9A<br>-3.4A<br>4.0 BOTTOM -4.3A<br>mT EE WT<br>60<br>Sea CNC<br>3.0<br>pj PN |<br>CINK 40 GaNeaeeeee<br>2.0 EeeeeeaNee KURA<br>pti tt tt NA 20 BNNOENE EEE<br>1.0<br>Pt ft | | tld NG SSN<br>ptt itt tt tt =<br>0.0 PPE EE ey \ 0 Pt | SS<br>25 50 75 100 125 150 25 50 75 100 125 150<br>T   , Case TemperatureC (  C)° Starting T  , Junction TemperatureJ (  C)°<br>Fig 9.   Maximum Drain Current Vs. Fig 10.   Maximum Avalanche Energy<br>Case Temperature Vs. Drain Current<br> 1000<br> 100<br>D = 0.50<br>0.20<br>0.10<br> 10 Cer I<br>0.05<br>P DM<br>0.02<br>0.01 t1<br> 1 =e C e SINGLE PULSE e TTT t2<br>(THERMAL RESPONSE)<br>FH 1. Duty factor D = Notes: t   / t 1 2<br>Pe 2. Peak T J = P DM x  Z thJA + TA<br>0.1<br>0.00001 0.0001 0.001 0.01 0.1  1  10<br>t  , Rectangular Pulse Duration (sec)1<br>D<br>-I   , Drain Current (A)<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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0.100.09 FA 0.20 VGS = -1.8V VGS = -2.5V<br>0.08 a 0.15<br>ASEH<br>0.07 Tt<br>0.06 0.10<br>0.05 Id = -4.3A<br>0.04 PETTAR 0.05 yy _ VGS = -4.5V<br>0.03<br>0.02 SSSTTL ft 0.00 ==a<br>1.0 2.0 3.0 4.0 5.0 6.0 7.0<br>0 10 20 30 40<br>-VGS, Gate -to -Source Voltage  ( V ) -ID , Drain Current ( A )<br>Fig 12.    Typical On-Resistance Vs. Fig 13.    Typical On-Resistance Vs.<br>Gate Voltage Drain Current<br>0.8<br>0.7 N<br>0.6 PNETELE I D  = -250μA NLL.<br>0.5<br>EL aN<br>0.4 EELELE<br>0.3 EL ELELENE<br>-75 -50 -25 0 25 50 75 100 125 150<br>TJ , Temperature ( °C )<br> )<br>Ω<br> ) RDS ( on ) , Drain-to-Source On Resistance (<br>Ω<br>RDS(on) ,  Drain-to -Source Voltage (<br>-VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 14.** Typical Threshold Voltage Vs. Junction Temperature 

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O 6 D e 5 | MBOSYLA eea| MILLIMETERSMIN0.89  — MAX1.12DIMENSIONS.036MININCHES J MAX.044<br>A1 0.01 0.10 .0004 .0039<br>tc re A2 0.88 1.02 .035 .040<br>te 3 E1 6 E | ——— bc 0.300.08 0.500.20 .0119.0032 .0196.0078<br>La] 1 2 ccc C B A —— DE 2.802.10 3.042.64 .111.083 a .119.103<br>H Tot ———a E1e 1.200.95 BSC1.40 .048.0375 BSC.055<br>e B 5 e1 1.90 BSC .075 BSC<br>cit ' e1 are) a————rs L1L 0.400.25 BS C0.60 .0158.0118 BSC.0236<br>a 0 0° 8° 0° 8°<br>s aaa 0.10 e .004<br>re bbb 0.20 .008<br>e ccc 0.15 s .006<br>4 H<br>mop A A2 CARN<br>L1<br>A1 i 3X b ly I aaa C ak, \<br>bbb C A B 3 S URF of aH 0<br>QO 7 3X L<br>RECOMMENDED FOOTPRINT<br>NOTES<br>3X [.038]0.972 1.  DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994.2.  DIMENSIONS ARE SHOWN IN MILLIMETERS AND INCHES.<br>3.  CONTROLLING DIMENSION: MILLIMETER.<br>=e [.1079]2.742 4   DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.5   DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.<br>6   DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H.<br>7   DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.<br>8.  OUTLINE CONFORMS TO JEDEC OUTLINE TO-236AB.<br>[.0375]0.95 3X     0.802     [.031]<br>1.90<br>[.075]<br>**----- End of picture text -----**<br>


Micro3 (SOT-23 / TO-236AB)  Part Marking Information 

Notes: This part marking information applies to devices produced after 02/26/2001 

|DATE CODE||||W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|
|---|---|---|---|---|---|---|---|---|---|---|---|
|PART NUMBER||||LEAD-FREE|YEAR||Y|WORK<br>WEEK||W||
||||||2011|2001|1|01||A||
||||||2012|2002|2|02||B||
||||||2013|2003|3|03||C||
|Cu WIRE<br>HALOGEN FREE||||ASSEMBLY LOT CODE|2015<br>2014<br>2016|2005<br>2004<br>2006|5<br>4<br>6|04||D||
|X = PART NUMBER CODE REFERENCE:|||||2017|2007|7|||||
|B = IRLML2803<br>A = IRLML2402||||T = IRLML6246<br>S = IRLML6244|2018<br>2020<br>2019|2008<br>2010<br>2009|8<br>0<br>9|24||X||
|C = IRLML6302||||U = IRLML6344||||25||Y||
|D = IRLML5103||||V = IRLML6346||||26||Z||
|E = IRLML6402||||W = IRFML8244||||||||
|F = IRLML6401||||X = IRLML2244|W = (27-52) IF PRECEDED BY A LETTER||||W = (27-52) IF PRECEDED BY A LETTER|||
|G = IRLML2502||||Y = IRLML2246||||WORK||||
|H = IRLML5203||||Z = IRFML9244|YEAR||Y|WEEK||W||
|I  = IRLML0030|||||2011|2001|A|27||A||
|J = IRLML2030|||||2012|2002|B|28||B||
|K = IRLML0100|||||2013|2003|C|29||C||
|L = IRLML0060|||||2015<br>2014|2005<br>2004|E<br>D|30||D||
|M = IRLML0040|||||2016|2006|F|||||
|N = IRLML2060||||DATE CODE EXAMPLE:|2017|2007|G|||||
|P = IRLML9301||||YWW = 432 = DF|2018|2008|H|||||
|R = IRLML9303||||YWW = 503 = 5C|2019|2009|J|||||
||||||2020|2010|K|50||X||
|||||||||51||Y||
|||||||||52||Z||



## ™ 

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**----- Start of picture text -----**<br>
2.05 ( .080 ) 1.6 ( .062 ) 1.32 ( .051 )<br>1.95 ( .077 ) 4.1 ( .161 ) 1.5 ( .060 ) 1.85 ( .072 ) 1.12 ( .045 )<br>3.9 ( .154 ) 1.65 ( .065 )<br>= = 7) 7<br>60 TR 666 6% 6 64-4 3.55 ( .139 ) | 8.3 ( .326 )<br>3.45 ( .136 ) 7.9 ( .312 )<br>\EIEIERIE IE IE}<br>FEED DIRECTION 4.1 ( .161 )<br>—. + | 3.9 ( .154 ) : 1.1 ( .043 )0.9 ( .036 ) L 0.35 ( .013 )0.25 ( .010 )<br>  178.00<br>( 7.008 )<br>    MAX.<br>9.90 ( .390 ) ae<br>8.40 ( .331 )<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
NOTES:<br>**----- End of picture text -----**<br>


1.  CONTROLLING DIMENSION : MILLIMETER. 

2.  OUTLINE CONFORMS TO EIA-481 & EIA-541. 

|**Qualification information**<br>†|||
|---|---|---|
|Qualification level|Consumer<br>(per JEDEC JESD47F<br>††guidelines)||
|Moisture Sensitivity Level|Micro3™(SOT-23)|MS L1<br>(per JEDEC J-STD-020D<br>††)|
|RoHS compliant|(per JEDEC J<br>)<br>Yes||



- Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability ††   Applicable version of JEDEC standard at the time of product release 

## **Revision History** 

|**Date**|**Comment**|
|---|---|
|4/28/2014|•Updated data sheet with new IR corporate template.<br>•Updated package outline & part marking on page 7.<br>•Added Qualification table -Qual level "Consumer" on page 9.<br>•Added bulletpoint in the  Benefits  "RoHS Compliant,Halogen -Free" onpage 1.|



**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRLML6401TRPBF/power-mosfet-p-channel-12-v-43-a-005-ohm-sot-23)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irlml6401trpbf/mosfet-p-micro3/dp/1463267)
---

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