# Power MOSFET, N Channel, 30 V, 5 A, 0.029 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:1857299/)

**URL**: https://novapart.co/products/IRLML6344TRPBF/power-mosfet-n-channel-30-v-5-a-0029-ohm-sot-23
**SKU**: IRLML6344TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1020
**Stock**: 1000+
**Lead Time**: 323 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.022ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:800mV; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET Series |
| Qualification | - |
| Power Dissipation | 1.3W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 5A |
| Drain Source On State Resistance | 0.029ohm |
| Gate Source Threshold Voltage Max | 800mV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1857299/)

|~~TGR~~|~~TGR~~|~~TGR~~|~~TGR~~|
|---|---|---|---|
||**VDS**|**30**|**V**|
||**VGS Max**|**± 12**|**V**|
|(@V|**RDS(on) max**<br>(@VGS= 4.5V)|**29**|**m**Ω|
|(@V|**RDS(on) max**<br>(@VGS= 2.5V)|**37**|**m**Ω|
|**Application(s)**||||



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**----- Start of picture text -----**<br>
HEXFET Power MOSFET<br>G 1<br>3 D<br>S 2 Micro3 [TM] (SOT-23)<br>IRLML6344TRPbF<br>**----- End of picture text -----**<br>


## **Application(s)** 

- Load/ System Switch 

## **Features and Benefits** 

## **Benefits** 

|Low RDSon(<29mΩ)||Lower Conduction Losses|
|---|---|---|
|Industry-standard SOT-23 Package||Multi-vendor compatibility|
|RoHScompliant containingno lead,no bromide and no halogen|results in|Environmentallyfriendly|
|MSL1,ConsumerQualification||Increased Reliability|



|**Base Part  Number**<br>**Package Type**|**Base Part  Number**<br>**Package Type**|**Form**<br>**Quantity**<br>**Standard Pack**|**Form**<br>**Quantity**<br>**Standard Pack**|**Form**<br>**Quantity**<br>**Standard Pack**|**Form**<br>**Quantity**<br>**Standard Pack**||**Orderable Part Number**|**Orderable Part Number**|**Orderable Part Number**|
|---|---|---|---|---|---|---|---|---|---|
|IRLML6344TRPbF<br>Micro3™(SOT-23)||Tape and Reel|||3000||IRLML6344TRPbF|||
|**Absolute Maximum Ratings**||||||||||
|**Symbol**|**Parameter**||||**Max.**||||**Units**|
|VDS|Drain-Source Voltage|||||30|||V|
|ID@ TA= 25°C|Continuous Drain Current, VGS@ 10V|||||5.0||||
|ID@ TA= 70°C|Continuous Drain Current, VGS@ 10V|||||4.0|||A|
|IDM|Pulsed Drain Current|||||25||||
|PD@TA= 25°C|Maximum Power Dissipation|||||1.3|||W|
|PD@TA= 70°C|Maximum Power Dissipation|||||0.8||||
||Linear DeratingFactor||||0.01||||W/°C|
|VGS|Gate-to-Source Voltage||||± 12||||V|
|TJ,TSTG|Junction and Storage Temperature Range||||-55  to + 150||-55  to + 150||°C|
|**Thermal Resistance**||||||||||
|**Symbol**|**Parameter**||||**Typ.**||**Max.**||**Units**|
|RθJA<br>RθJA|Junction-to-Ambient<br>–––<br>100<br>Junction-to-Ambient(t<10s)<br>–––<br>99<br>~~nee~~<br>~~en~~<br>~~©~~||||||||°C/W|



_ORDERING INFORMATION:_ 

_See detailed ordering and shipping information on the last page of this data sheet._ 

## �������������� 

## **Electric Characteristics @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**|**Parameter**|**Min. **|**Typ. **|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage|30|–––|–––|V|VGS= 0V,ID= 250μA|
|ΔV(BR)DSS/ΔTJ|Breakdown Voltage Temp. Coefficient|–––|0.02|–––|V/°C|Reference to 25°C,ID= 1mA|
|RDS(on)|Static Drain-to-Source On-Resistance|–––|22|29|mΩ|VGS= 4.5V,ID= 5.0A�|
|||–––|27|37||VGS= 2.5V,ID= 4.0A�|
|VGS(th)|Gate Threshold Voltage|0.5|0.8|1.1|V|VDS= VGS,ID= 10μA|
|IDSS|Drain-to-Source Leakage Current|–––|–––|1.0|μA|VDS=24V,VGS= 0V|
|||–––|–––|150||VDS= 24V,VGS= 0V,TJ= 125°C|
|IGSS|Gate-to-Source Forward Leakage|–––|–––|100|nA|VGS= 12V|
||Gate-to-Source Reverse Leakage|–––|–––|-100||VGS= -12V|
|RG|Internal Gate Resistance|–––|1.7|–––|Ω||
|gfs|Forward Transconductance|19|–––|–––|S|VDS= 10V,ID= 5.0A|
|Qg|Total Gate Charge|–––|6.8|–––|nC|ID= 5.0A<br>VDS=15V<br>VGS= 4.5V�|
|Qgs|Gate-to-Source Charge|–––|0.3|–––|||
|Qgd|Gate-to-Drain("Miller")Charge|–––|2.4|–––|||
|td(on)|Turn-On DelayTime|–––|4.2|–––|ns|ID= 1.0A<br>VGS= 4.5V<br>RG= 6.8Ω<br>VDD=15V�|
|tr|Rise Time|–––|5.6|–––|||
|td(off)|Turn-Off DelayTime|–––|22|–––|||
|tf|Fall Time|–––|9.1|–––|||
|Ciss|Input Capacitance|–––|650|–––|pF|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz|
|Coss|Output Capacitance|–––|65|–––|||
|Crss|Reverse Transfer Capacitance|–––|46|–––|||



## **Source - Drain Ratings and Characteristics** 

|**Symbol**|**Parameter**|**Min. **|**Typ. **|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|IS|Continuous Source Current<br>(Body Diode)|–––|–––|1.3|A|D<br>S<br>G<br>integral reverse<br>p-n junction diode.<br>MOSFET symbol<br>showing  the|
|ISM|Pulsed Source Current<br>(Body Diode)��|–––|–––|25|||
|VSD|Diode Forward Voltage|–––|–––|1.2|V|TJ= 25°C,IS= 5.0A,VGS= 0V�|
|trr|Reverse RecoveryTime|–––|10|15|ns|di/dt = 100A/μs�<br>TJ= 25°C, VR= 15V, IF=1.3A|
|Qrr|Reverse RecoveryCharge|–––|3.8|5.7|nC||



Notes � through � are on page 10 

� ����������� ��������������������������������� ������������������������� �������������������������������� 

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100 100<br>VGS VGS<br>PettPTT TTT TOP           10V4.5V2.5V aPT TTTTT TOP           10V4.5V2.5V<br>2.0V 2.0V<br>1.9V 1.9V<br>1.7V 1.7V<br>10 1.5V 10 1.5V<br>BOTTOM 1.4V BOTTOM 1.4V<br>V7/ mee —— el V7 // a0 ee eee<br>Yom V/A | |ee<br>1.4V<br>te TT<br>1 ee | HHHLI 1 “anit|<br>pny aa |LS<br>pep 0<br>ee a<br>pe 1.4V ≤ 60μs PULSE WIDTH |<br>≤ 60μs  PULSE WIDTH  Tj = 150 ° C<br>Tj = 25°C<br>0.1 SCM Tl 0.1 E llE vt LETT<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>100 2.0<br>ID = 5.0A<br>—es VGS = 4.5V ELL<br>a y TE<br>a es<br>10 ee a eea e 1.5 EEEA<br>T = 150°C<br>J  YF OTL A<br>eyAi4) on A<br>1 | ff | | 1.0 {iteAA<br>ff TJ = 25°C pz<br>| ff "|<br>VDS = 15V<br>≤ 60μs PULSE WIDTH<br>0.1 ian 0.5 SaRRReeeeee<br>1.0 1.5 2.0 2.5 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>VGS, Gate-to-Source Voltage (V)<br>Fig 3.   Typical Transfer Characteristics Fig 4.   Normalized On-Resistance<br>Vs. Temperature<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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10000 14.0<br>VGS   = 0V,       f = 1 MHZ ID= 5.0A<br>Ciss   = C gs + Cgd,  C ds SHORTED VDS= 24V<br>12.0<br>C rss    = C gd  VDS= 15V<br>Coss  = Cds + Cgd VDS= 6.0V<br>10.0<br>1000 FI = Yr<br>C<br>iss<br>a nA<br>8.0<br>C oss 6.0<br>100 UE C rss | | Af<br>4.0<br>10 aFTee EE FEETeee 2.00.0 mTrn fF ] |<br>1 10 100 0.0 4.0 8.0 12.0 16.0 20.0<br>VDS, Drain-to-Source Voltage (V)  QG,  Total Gate Charge (nC)<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>100 100<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>10 1msec<br>os path<br>10 TJ = 150°CJ = 150°C= 150°C 100μsec<br>ee a a phaSagsty<br>Py A 1 ENal<br>1<br>TJ = 25°CJ = 25°C= 25°C 0.1 TA = 25°C<br>Tj = 150°C 10msec<br>V GS  = 0V Single Pulse<br>0.1 Tr Ph yp 0.01 Oe<br>0.1 1 10 100<br>0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1<br>VDS, Drain-to-Source Voltage (V)<br>ISD, Reverse Drain Current (A)<br>VGS, Gate-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
100<br>os<br>10 ee TJ = 150°CJ = 150°C= 150°C a a<br>Py A<br>1<br>TJ = 25°CJ = 25°C= 25°C<br>V GS  = 0V<br>0.1 Tr Ph yp<br>0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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**----- Start of picture text -----**<br>
5.0<br>SQ Rp<br>4.0 nN NO Vv,Sv D.U.T.<br>+<br>-<br>3.0 > »\| Re |<br>)t Ves<br>≤ 1<br>2.0 } a ≤ 0.1 %<br>Fig 10a.   Switching Time Test Circuit<br>TTT PulseWidth ys<br>1.0<br>VDS<br>0.0 90%<br>25 50 75 100 125 150<br>TA , Ambient Temperature (°C)<br>10%<br>Fig 9.   Maximum Drain Current Vs. VGS | \¢ l e > |\ p le ><br> Ambient Temperature td(on) tr td(off) tf<br>ID  , Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 10b.** Switching Time Waveforms 

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**----- Start of picture text -----**<br>
1000<br>a eh ee ee ee ee ee ee ee ee eee<br>100 PCA AIP PCIE PITT Ee<br>D = 0.50<br>mz, 0.20 a rm TE tT<br>10 0.10<br>0.05<br>a ag<br>nz, 0.02 eee a a aa ee ee ee<br>1 ee 0.01 CT ET TT TP<br>0.1 aaAS eA ee) ee ee ee ee eee<br>a Sh ee ee eee eee i eee<br>0.01 AT SINGLE PULSE SS Notes:<br>1. Duty Factor D = t1/t2<br>a ( THERMAL RESPONSE ) ee) ee ee ee ee ee 2. Peak Tj = P dm x Zthja + TA<br>a imine<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJA ) °C/W<br>**----- End of picture text -----**<br>


**Fig 11.** Typical Effective Transient Thermal Impedance, Junction-to-Ambient 

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**----- Start of picture text -----**<br>
70 80<br>ID = 5.0A<br>Lee<br>60<br>60<br>EEE<br>50<br>40 40<br>Vgs = 2.5V<br>ANE<br>T = 125°C<br>J<br>30<br>BEDS SEURREES<br>20<br>Vgs = 4.5V<br>PUNE<br>20<br>TJ = 25°C<br>BERR<br>10 0<br>0 1 2 3 4 5 6 7 8 9 10 11 12 0 10 20 30 40<br>ID, Drain Current (A)<br>VGS, Gate -to -Source Voltage  (V)<br>) Ω<br>RDS(on),  Drain-to -Source On Resistance (m<br>)  Ω<br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


**Fig 12.** Typical On-Resistance Vs. Gate Voltage 

**Fig 13.** Typical On-Resistance Vs. Drain Current 

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**----- Start of picture text -----**<br>
Id<br>Vds<br>Vgs<br>L<br>VCC<br>DUT<br>0<br>Vgs(th) S<br>201 K<br>Qgodr Qgd Qgs2 Qgs1<br>**----- End of picture text -----**<br>


**Fig 14a.** Basic Gate Charge Waveform 

**Fig 14b.** Gate Charge Test Circuit 

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**----- Start of picture text -----**<br>
1.2 100<br>1.0<br>80<br>ReN TT<br>0.8<br>HESS (INT<br>60<br>0.6<br>ID = 10μA<br>ID = 250μA 40<br>0.4 UAESS TINT<br>20 IN<br>PCEELEEDS HN A<br>0.2<br>0.0 PEEP) 0 UII)<br>-75 -50 -25 0 25 50 75 100 125 150 1E-005 0.0001 0.001 0.01 0.1 1 10<br>TJ , Temperature ( °C ) Time (sec)<br>Fig 15.   Typical Threshold Voltage Vs. Fig 16. Typical Power Vs. Time<br>VGS(th), Gate threshold Voltage (V)<br>Power (W)<br>**----- End of picture text -----**<br>


**Fig 15.** Typical Threshold Voltage Vs. Junction Temperature 

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**----- Start of picture text -----**<br>
™<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
DIMENSIONS<br>Dimensions are shown in millimeters (inches) PO<br>6 A 5 MILLIMETERS INCHES<br>D SYMBOL MIN MAX MIN MAX<br>A 0085 A es 0.89 1.12 00a<br>7A o4 A2 C Poof A1 0.01 0.10 0.0004<br>3 E A2 0.88 1.02<br>6 — E1 1 H 2 0.15 [0.006] M C B A t ;_}| b 0.30 | 0.50 |_| 6.004 |<br>0.10 [0.004] C c 0.08 0.20<br>TP oo ro A1 | = 3X b Ess D 2.80 3.04 oe<br>An 5 B + e i e1 | NOTES: ak on 0.20 [0.008] M C B A |||| E1Ee 0.087 1.202.100.95 ||| BSC1.402.64 0.110 0.0830.047 | | |  0.120 0.1040.055 |||<br>|ote e1L 0.075 1.900.40 BSC0.60 BSCBSc<br>H A 4 L1 Recommended Footprint L1 0.54 REF | 0.024 REF<br>L2 0.25 BSC BSC<br>6 rT c 0.972 ee eeeseeee 0 8 0 8<br>T f L2 0.802 —— 0.950 2.742<br>3X L 1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994<br>2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>“  7 a 3. CONTROLLING DIMENSION: MILLIMETER.4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.<br>L 1.900 ; 5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.<br>n 6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES<br>  NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS<br>  OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.<br>A 7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.<br>8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.<br>**----- End of picture text -----**<br>


## ™ 

Notes: This part marking information applies to devices produced after 02/26/2001 

DATE CODE MARKING INSTRUCTIONS 

||DATE CODE|||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
||PART NUMBER|||LEAD FREE|WW =  (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|||WW =  (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|||WW =  (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|
|||||||||||||
|||~~X~~YWL~~G~~|||2001<br>1<br>01<br>A<br>YEAR<br>Y<br>W<br>WEEK<br>WORK<br>2011<br>~~a~~|||||||
||Cu WIRE<br>HALOGEN FREE|LOT CODE||LOT CODE|2013<br>2014<br>2012|2003<br>2004<br>2002|3<br>4<br>2|03<br>04<br>02||C<br>D<br>B||
|X =  PART NUMBER CODE REFERENCE:|X =  PART NUMBER CODE REFERENCE:||||2015|2005|5|||||
||A =  IRLML2402|S =  IRLML6244|||2016|2006|6|||||
||B =  IRLML2803|T =  IRLML6246|||2017<br>2018|2007<br>2008|7<br>8|||||
||C =  IRLML6302|U =  IRLML6344|||2019|2009|9|||||
||D =  IRLML5103|V =  IRLML6346|||2020|2010|0|24||X||
||E =  IRLML6402|W =  IRFML8244||||||25||Y||
||F =  IRLML6401|X =  IRLML2244||||||26||Z||
||H =  IRLML5203<br>G =  IRLML2502|Z =  IRFML9244<br>Y =  IRLML2246|||WW =  (27-52) IF PRECEDED BY A LETTER|WW =  (27-52) IF PRECEDED BY A LETTER|WW =  (27-52) IF PRECEDED BY A LETTER|||||
||I  =  IRLML0030||||YEAR||Y|WORK<br>WEEK||W||
||J =  IRLML2030|||||||||||
||L =  IRLML0060<br>K =  IRLML0100||||2013<br>2011<br>2012|2003<br>2001<br>2002|C<br>B<br>A|29<br>27<br>28||C<br>B<br>A||
||M =  IRLML0040||||2014|2004|D|30||D||
||N =  IRLML2060||||2015|2005|E|||||
||P =  IRLML9301||||2016|2006|F|||||
||R =  IRLML9303||||2017|2007|G|||||
||||||2018|2008|H|||||
||Note: A line above the work week|Note: A line above the work week|||2019|2009|J|||||
||(as shown here) indicates Lead - Free.||||2020|2010|K|50||X||
|||||||||51||Y||
|||||||||52||Z||



## (SOT-23) Tape & Reel Information 

## ™ 

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**----- Start of picture text -----**<br>
2.05 ( .080 ) 1.6 ( .062 ) 1.32 ( .051 )<br>1.95 ( .077 ) 4.1 ( .161 ) 1.5 ( .060 ) 1.85 ( .072 ) 1.12 ( .045 )<br>3.9 ( .154 ) 1.65 ( .065 )<br>= = 7) 7<br>60 TR 66 oo 6 o4— 3.55 ( .139 ) | 8.3 ( .326 )<br>3.45 ( .136 ) 7.9 ( .312 )<br>\EIEIERIE IE IE}<br>FEED DIRECTION 4.1 ( .161 )<br>—- 4 4 3.9 ( .154 ) ; 1.1 ( .043 )0.9 ( .036 ) + 0.35 ( .013 )0.25 ( .010 )<br>  178.00<br>( 7.008 )<br>    MAX.<br>9.90 ( .390 ) ae<br>8.40 ( .331 )<br>NOTES:<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
1.  CONTROLLING DIMENSION : MILLIMETER.<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
2.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>**----- End of picture text -----**<br>


## **Qualification information** † 

|**Qualification information**<br>†|||
|---|---|---|
|Qualification level|Consumer††<br>(per JEDEC JESD47F<br>†††guidelines )||
|Moisture Sensitivity Level|Micro3™(SOT-23)|MSL1<br>(per IPC/JEDEC J-STD-020D<br>†††)|
|RoHS compliant|Yes||



+ Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability to Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ tt Applicable version of JEDEC standard at the time of product release. 

Repetitive rating;  pulse width limited by max. junction temperature. Pulse width ≤ 400μs; duty cycle ≤ 2%. 

Surface mounted on 1 in square Cu board Refer to application note #AN-994. — 

## **Revision History** 

|**Date**|**Comment**|
|---|---|
|12/19/2014|•Formatted the data sheet using the IR Corporate template.<br>•Updated part marking on page 8.<br>•Corrected Typical Output curve Fig.2 onpage 3(used to be exact same as Fig.1)|



**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

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- [Supplier page](https://es.farnell.com/infineon/irlml6344trpbf/mosfet-n-ch-30v-5a-sot23/dp/1857299)
---

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> typically respond to quote requests within one business day.
> [Request a quote](https://novapart.co/quote/) — it's free and there's no
> minimum order.
