# Power MOSFET, P Channel, 20 V, 600 mA, 0.6 ohm, SOT-23, Surface Mount
**URL**: https://novapart.co/products/IRLML6302TRPBF/power-mosfet-p-channel-20-v-600-ma-06-ohm-sot-23
**SKU**: IRLML6302TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1010
**Stock**: 1000+
**Lead Time**: 2 days (indicative)
## Description
Transistor Polarity:P Channel; Continuous Drain Current Id:600mA; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.6ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1.5V; Power
## Specifications
| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | To Be Advised |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 400mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 600mA |
| Drain Source On State Resistance | 0.6ohm |
| Gate Source Threshold Voltage Max | 1.5V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:9103406RL/)
**==> picture [207 x 196] intentionally omitted <==**
**----- Start of picture text -----**
G 1 Voss = -20V
3 D
S 2 Rpsvon) = 0.60 Ω
ae
i
Micro3 [TM]
**----- End of picture text -----**
|**Base Part Number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Orderable Part Number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|IRLML6302TRPbF|Micro3™ (SOT-23)|Tape and Reel|3000|IRLML6302TRPbF|
|Δ
~~Ver)DSs~~
~~Verse! ~~
~~Rpson)~~
~~Vesith)~~
~~Os~~
~~Ipss~~
~~less~~
~~Qg~~
~~Qgs~~
~~Qua~~
~~ta(on)~~
~~i~~
~~ta(otf)~~
~~tr~~
~~Ciss~~
Coss
Ciss|Δ
~~Ω~~
~~Drain-to-Source Breakdown Voltage~~
~~| -20|—-|—-~~
~~| V_ | ~~
~~T,| Breakdown Voltage Temp. Coefficient | --- | -4.9 | —-- [mV/°C| ~~
~~a~~
~~| --- | —— | 0.60 |~~
~~Static Drain-to-Source On-Resistance SS ~~
Gate Threshold Voltage
~~}-0.70]~~
~~—-]| -1.5| V_ |~~
~~Forward Transconductance~~
~~| 0.56] —-| —-| S | ~~
~~Drain-to-Source Leakage Current~~
~~|---| | -1.0 | yA~~
~~| -——-| —-| -25 |~~
~~Gate-to-Source Forward Leakage~~
~~| ——| —|-100 | nA~~
~~Gate-to-Source Reverse Leakage~~
~~| --- | —- | 100 |~~
~~Total Gate Charge~~
~~| —-| 24] 3.6 |~~
~~Gate-to-Source Charge~~
~~| —-- | 0.56] 0.84] nC | ~~
~~Gate-to-Drain ("Miller") Charge~~
~~| —-| 1.0] 1.5 |~~
~~Turn-On Delay Time~~
~~|---| 13 | -— |~~
~~fRiseTime~~
~~_———SS~S~w~~
~~| 18 ~~~~**|** ~~~~**—** | ,, | ~~
~~Turn-Off Delay Time~~
~~|---| 22~~
~~|~~
~~Fall Time~~
~~|---| 22 | —|~~
~~Input Capacitance~~
~~|---| 97 | -—|~~
Output Capacitance
~~|---|~~
~~53 | --|~~ ~~pF | ~~
Reverse Transfer Capacitance
| —| 28 | — ||Δ
~~Ω~~
~~Drain-to-Source Breakdown Voltage~~
~~| -20|—-|—-~~
~~| V_ | ~~
~~T,| Breakdown Voltage Temp. Coefficient | --- | -4.9 | —-- [mV/°C| ~~
~~a~~
~~| --- | —— | 0.60 |~~
~~Static Drain-to-Source On-Resistance SS ~~
Gate Threshold Voltage
~~}-0.70]~~
~~—-]| -1.5| V_ |~~
~~Forward Transconductance~~
~~| 0.56] —-| —-| S | ~~
~~Drain-to-Source Leakage Current~~
~~|---| | -1.0 | yA~~
~~| -——-| —-| -25 |~~
~~Gate-to-Source Forward Leakage~~
~~| ——| —|-100 | nA~~
~~Gate-to-Source Reverse Leakage~~
~~| --- | —- | 100 |~~
~~Total Gate Charge~~
~~| —-| 24] 3.6 |~~
~~Gate-to-Source Charge~~
~~| —-- | 0.56] 0.84] nC | ~~
~~Gate-to-Drain ("Miller") Charge~~
~~| —-| 1.0] 1.5 |~~
~~Turn-On Delay Time~~
~~|---| 13 | -— |~~
~~fRiseTime~~
~~_———SS~S~w~~
~~| 18 ~~~~**|** ~~~~**—** | ,, | ~~
~~Turn-Off Delay Time~~
~~|---| 22~~
~~|~~
~~Fall Time~~
~~|---| 22 | —|~~
~~Input Capacitance~~
~~|---| 97 | -—|~~
Output Capacitance
~~|---|~~
~~53 | --|~~ ~~pF | ~~
Reverse Transfer Capacitance
| —| 28 | — ||Δ
~~Ω~~
~~Drain-to-Source Breakdown Voltage~~
~~| -20|—-|—-~~
~~| V_ | ~~
~~T,| Breakdown Voltage Temp. Coefficient | --- | -4.9 | —-- [mV/°C| ~~
~~a~~
~~| --- | —— | 0.60 |~~
~~Static Drain-to-Source On-Resistance SS ~~
Gate Threshold Voltage
~~}-0.70]~~
~~—-]| -1.5| V_ |~~
~~Forward Transconductance~~
~~| 0.56] —-| —-| S | ~~
~~Drain-to-Source Leakage Current~~
~~|---| | -1.0 | yA~~
~~| -——-| —-| -25 |~~
~~Gate-to-Source Forward Leakage~~
~~| ——| —|-100 | nA~~
~~Gate-to-Source Reverse Leakage~~
~~| --- | —- | 100 |~~
~~Total Gate Charge~~
~~| —-| 24] 3.6 |~~
~~Gate-to-Source Charge~~
~~| —-- | 0.56] 0.84] nC | ~~
~~Gate-to-Drain ("Miller") Charge~~
~~| —-| 1.0] 1.5 |~~
~~Turn-On Delay Time~~
~~|---| 13 | -— |~~
~~fRiseTime~~
~~_———SS~S~w~~
~~| 18 ~~~~**|** ~~~~**—** | ,, | ~~
~~Turn-Off Delay Time~~
~~|---| 22~~
~~|~~
~~Fall Time~~
~~|---| 22 | —|~~
~~Input Capacitance~~
~~|---| 97 | -—|~~
Output Capacitance
~~|---|~~
~~53 | --|~~ ~~pF | ~~
Reverse Transfer Capacitance
| —| 28 | — ||Δ
~~Ω~~
~~Drain-to-Source Breakdown Voltage~~
~~| -20|—-|—-~~
~~| V_ | ~~
~~T,| Breakdown Voltage Temp. Coefficient | --- | -4.9 | —-- [mV/°C| ~~
~~a~~
~~| --- | —— | 0.60 |~~
~~Static Drain-to-Source On-Resistance SS ~~
Gate Threshold Voltage
~~}-0.70]~~
~~—-]| -1.5| V_ |~~
~~Forward Transconductance~~
~~| 0.56] —-| —-| S | ~~
~~Drain-to-Source Leakage Current~~
~~|---| | -1.0 | yA~~
~~| -——-| —-| -25 |~~
~~Gate-to-Source Forward Leakage~~
~~| ——| —|-100 | nA~~
~~Gate-to-Source Reverse Leakage~~
~~| --- | —- | 100 |~~
~~Total Gate Charge~~
~~| —-| 24] 3.6 |~~
~~Gate-to-Source Charge~~
~~| —-- | 0.56] 0.84] nC | ~~
~~Gate-to-Drain ("Miller") Charge~~
~~| —-| 1.0] 1.5 |~~
~~Turn-On Delay Time~~
~~|---| 13 | -— |~~
~~fRiseTime~~
~~_———SS~S~w~~
~~| 18 ~~~~**|** ~~~~**—** | ,, | ~~
~~Turn-Off Delay Time~~
~~|---| 22~~
~~|~~
~~Fall Time~~
~~|---| 22 | —|~~
~~Input Capacitance~~
~~|---| 97 | -—|~~
Output Capacitance
~~|---|~~
~~53 | --|~~ ~~pF | ~~
Reverse Transfer Capacitance
| —| 28 | — ||Δ
~~Ω~~
~~Drain-to-Source Breakdown Voltage~~
~~| -20|—-|—-~~
~~| V_ | ~~
~~T,| Breakdown Voltage Temp. Coefficient | --- | -4.9 | —-- [mV/°C| ~~
~~a~~
~~| --- | —— | 0.60 |~~
~~Static Drain-to-Source On-Resistance SS ~~
Gate Threshold Voltage
~~}-0.70]~~
~~—-]| -1.5| V_ |~~
~~Forward Transconductance~~
~~| 0.56] —-| —-| S | ~~
~~Drain-to-Source Leakage Current~~
~~|---| | -1.0 | yA~~
~~| -——-| —-| -25 |~~
~~Gate-to-Source Forward Leakage~~
~~| ——| —|-100 | nA~~
~~Gate-to-Source Reverse Leakage~~
~~| --- | —- | 100 |~~
~~Total Gate Charge~~
~~| —-| 24] 3.6 |~~
~~Gate-to-Source Charge~~
~~| —-- | 0.56] 0.84] nC | ~~
~~Gate-to-Drain ("Miller") Charge~~
~~| —-| 1.0] 1.5 |~~
~~Turn-On Delay Time~~
~~|---| 13 | -— |~~
~~fRiseTime~~
~~_———SS~S~w~~
~~| 18 ~~~~**|** ~~~~**—** | ,, | ~~
~~Turn-Off Delay Time~~
~~|---| 22~~
~~|~~
~~Fall Time~~
~~|---| 22 | —|~~
~~Input Capacitance~~
~~|---| 97 | -—|~~
Output Capacitance
~~|---|~~
~~53 | --|~~ ~~pF | ~~
Reverse Transfer Capacitance
| —| 28 | — ||Ω
Ω,
~~Vos = OV, Ip = -250uA~~
~~Reference to 25°C, Ip = -1mA~~
~~Ves = -4.5V, Ip = -0.61A ®~~
~~**V**as = -2.7V, lp =-0.31A ©~~
~~ps=~~
~~Ves, Ip = -250uA~~
~~Vps =-10V, Ip = -0.31A~~
~~Vos = -16V, Ves = OV~~
~~Vps = -16V, Ves = OV, Ty = 125°C~~
~~Ves = -12V~~
~~Vas = 12V~~
~~Ip = -0.61A~~
~~Vps = -16V~~
~~Ves = -4.5V, See Fig.~~
~~6 and 9 ®~~
~~Vpop = -10V~~
~~= OCIA~~
~~Re =6.2~~
~~Rp=16~~
~~See Fig. 10 ®~~
~~Vas = OV~~
~~Vos~~ ~~=~~ ~~-15V~~
f =1.0MHz, See Fig. 5||||
|---|---|---|---|---|---|---|---|---|---|
|Source-Drain Ratings and Characteristics||||||||||
|||**Parameter**|**Min. Typ. Max. Units**|||**Conditions**||||
|IS||Continuous Source Current||||MOSFET symbol|||D|
|ISM||(BodyDiode)
Pulsed Source Current|A|||showing the
integral reverse|G|||
|||(BodyDiode)||||p-njunction diode.|||S|
|VSD
trr
Qrr
~~a~~
~~-—~~||Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge|–––
–––
-1.2
V
–––
35
53
ns
–––
26
39
nC|||TJ= 25°C, IS= -0.61A, VGS= 0V
TJ= 25°C, IF= -0.61A
di/dt = -100A/μs
®||||
≤
≤
® Pulse width ≤ 300us; duty cycle ≤ 2%. ( See fig. 11 ) ® Surface mounted on FR-4 board, t ≤ ≤
≤
**==> picture [203 x 198] intentionally omitted <==**
**----- Start of picture text -----**
10 TOP - - 7.5V 5.0V vest pT Ppp eee
- 4.0V oor ae
- 3.5V
- 3.0V Ae
- 2.5V
- 2.0V BOTTOM - 1.5V i J, -=o
1 |
ea ee
LBZ oe iy
GZ
0.1 eat |
a ee ee eee
a ee ee ee
0.01 PEEL -1.5V T = 25°C ae J mm
0.1 1 10
-V , Drain-to-Source Voltage (V)DS
D
-I , Drain-to-Source Current (A)
**----- End of picture text -----**
**==> picture [203 x 197] intentionally omitted <==**
**----- Start of picture text -----**
10
=== =aaeS= T = 25J °C
ee.
ee ee ee ee | — |
T = 150°CJ
1 [anne oenen
==>SS “aeee
ee 45S ==S—
5 2 ee ee ee eee
Geena
0.1
a e
@(jeAe ee ee ee eee eee
V = -10V DS
0.01 PT LT ous purse wore
1.5 [TT 2.0 2.5 3.0 aspen 3.5 4.0 4.5
-V , Gate-to-Source Voltage (V)GS
D
-I , Drain-to-Source Current (A)
**----- End of picture text -----**
**==> picture [203 x 198] intentionally omitted <==**
**----- Start of picture text -----**
10
TOP - - 7.5V 5.0V vest EHA [CS] A
- 4.0V oaA OO
- 3.5V
- 3.0V - 2.5V SEE ee
- 2.0V
BOTTOM - 1.5V ZZ aaa
1 |gg
me ea
| fhe
Sgr ett
0.1 Za
-1.5V
oo —
| ce | tt TT
20μs PULSE WIDTH
0.01 Cn T = 150°CJ
0.1 1 10
-V , Drain-to-Source Voltage (V)DS
D
-I , Drain-to-Source Current (A)
**----- End of picture text -----**
**==> picture [213 x 198] intentionally omitted <==**
**----- Start of picture text -----**
2.0 P E
1.5 aJ Le
1.0 BERDEHUED>>a00 00RRORRR
J ra il
eer
0.5 ba 0 TATA AAA HAOOO
ae
0.0 PPE
Ey dew
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature (°C)J
(Normalized)
DS(on)
R , Drain-to-Source On Resistance
**----- End of picture text -----**
**==> picture [209 x 476] intentionally omitted <==**
**----- Start of picture text -----**
180
V GS = 0V, f = 1MHz
160 C = C + C , C SHORTEDC = Ciss gs gd dsrss gd
| C = C + Coss ds gd
140 s
SL
120
ss
DS SSE
SEE
100
80 '
ESCH
ss
60 P So NE .
a SE
40 eS
a
20
0 SSa eee
1 10 100
-V , Drain-to-Source Voltage (V)DS
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10 pfa— aff a |
1 pte
| aA |
T = 150J °C
ff
| | FY | YF | f[ [ fT | |
T = 25°C J
a ae ee a
0.1
ff | |
Feet
FF
0.01 A re A
0.4 0.6 0.8 1.0 1.2 1.4
-V , Source-to-Drain Voltage (V)SD
C, Capacitance (pF)
SD
-I , Reverse Drain Current (A)
**----- End of picture text -----**
**==> picture [199 x 197] intentionally omitted <==**
**----- Start of picture text -----**
10
I = -0.61AD
V = -16V DS
8 CEE
ee
Pf
6
++
4 tL AR
nnae VA
| |
2 | ‘poe” |
0 (Af| ronretrorcu SEE FIGURE 9
0.0 1.0 2.0 3.0 4.0
Q , Total Gate Charge (nC)G
GS
-V , Gate-to-Source Voltage (V)
**----- End of picture text -----**
**==> picture [210 x 196] intentionally omitted <==**
**----- Start of picture text -----**
10 OPERATION IN THIS AREA LIMITED FAH
BY R
eauox DS(on) Lit
tt
ee aucull mesa 100μs
ctles
1 CNTRNVI TUT
1ms
SSS
eect esi
10ms
LN
Single Pulse TUE
0.1 sve | tL LTT]
1 10 100
-V , Drain-to-Source Voltage (V)DS
D
-I , Drain Current (A)
**----- End of picture text -----**
**==> picture [426 x 476] intentionally omitted <==**
**----- Start of picture text -----**
-4.5V — QG Vycs D.U.T.
e s QGS QGD Re
+- Vop
VG
)} -4.5V
Pulse Width ≤ 1 ys
Duty Factor ≤ 0.1 %
Charge
Fig 9a. Basic Gate Charge Waveform Fig 10a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
VDS
50K Ω 90%
12V .2 μ F
.3 μ F
D.U.T. +-VDS
: 10% \ A
VGS VGS
-3mA F t a \< d(on) > < tr >i td(off) m l e tf >
on /\ \
IG ID
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit Fig 10b. Switching Time Waveforms
1000
PEE SEE SE
|
D = 0.50
100 Fe ee eeese —— 1 ee| |
0.20
Se 0.10 eesti See
a ——
0.05
10
0.02
0.01 PDM
ee acl eee TE
ee SINGLE PULSE t1
1 | (THERMAL RESPONSE) t2
Notes:
aen ee ee 1. Duty factor D = t / t1 2
ee 2. Peak T J = P DM x Z thJA + TA
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
t , Rectangular Pulse Duration (sec)1
thJA
(Z )
Thermal Response
**----- End of picture text -----**
**==> picture [271 x 447] intentionally omitted <==**
**----- Start of picture text -----**
D.U.T + Circuit Layout Considerations
™ • Low Stray Inductance
@ • Ground Plane
• Low Leakage Inductance
| I - Current Transformer
+
- - +
00
Kk
®
Rg • dv/dt controlled by Rg +
• Isp controlled by Duty Factor "D" -
‘ © • D.U.T. - Device Under Test
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
® Driver Gate Drive
P.W.
Period D =
P.W. — Period _t
[
‘
@ D.U.T. ISD Waveform
Reverse
Recovery Body Diode Forward
Current "| Current di/dt fs
©) D.U.T. VDS Waveform
Diode Recoverydv/dt \ F
[,
Re-Applied
Voltage Body Diode Forward Drop
® Inductor Curent e e eee
Ripple ≤ 5% [ ]
**----- End of picture text -----**
**==> picture [257 x 253] intentionally omitted <==**
**----- Start of picture text -----**
O 6 D wO 5 | MOSYBLA -——— MILLIMETERS0.89MIN MAX1.12DIMENSIONS.036MININCHESMAX.044
A1 0.01 0.10 .0004 .0039
Zz fy — A2 —— 0.88 1.02 — .035 .040
3 | E1 10 6 E a bc 0.300.08 0.500.20 .0119.0032 .0196.0078
1 2 ccc C B A D 2.80 3.04 .111 .119
E 2.10 2.64 .083 .103
E1 1.20 1.40 .048 .055
a ec =——— e 0.95 BSC .0375 BSC
e L i Li] 4 B 5 5 —— e1 1.90 BSC .075 BSC
L 0.40 0.60 .0158 .0236
U + e1 ee L1 0.25 BSC .0118 BSC
—— 0 0° 8° 0° 8°
aaa 0.10 .004
bbb 0.20 .008
— ccc 0.15 —— .006
4 H
mor A A2 ma 0 L1
A1 3X bbbb C A B O 3 SURFaaa C e =. 0
O 7 3X L . c ar a
RECOMMENDED FOOTPRINT
NOTES
3X [.038]0.972 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994.2. DIMENSIONS ARE SHOWN IN MILLIMETERS AND INCHES.
f a 4 3. CONTROLLING DIMENSION: MILLIMETER.
[.1079]2.742 4 DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.5 DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.
6 DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H.
7 DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.
cB A 8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236AB.
[.0375]0.95 3X 0.802 [.031]
1.90
bel [.075]
**----- End of picture text -----**
Micro3 (SOT-23 / TO-236AB) Part Marking Information
Notes: This part marking information applies to devices produced after 02/26/2001
|DATE CODE||||W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|
|---|---|---|---|---|---|---|---|---|---|---|---|
|PART NUMBER||||LEAD-FREE|YEAR||Y|WORK
WEEK||W||
||||||2011|2001|1|01||A||
||||||2012|2002|2|02||B||
||||||2013|2003|3|03||C||
|Cu WIRE
HALOGEN FREE||||ASSEMBLY LOT CODE|2015
2014
2016|2005
2004
2006|5
4
6|04||D||
|X = PART NUMBER CODE REFERENCE:|||||2017|2007|7|||||
|B = IRLML2803
A = IRLML2402||||T = IRLML6246
S = IRLML6244|2018
2020
2019|2008
2010
2009|8
0
9|24||X||
|C = IRLML6302||||U = IRLML6344||||25||Y||
|D = IRLML5103||||V = IRLML6346||||26||Z||
|E = IRLML6402||||W = IRFML8244||||||||
|F = IRLML6401||||X = IRLML2244|W = (27-52) IF PRECEDED BY A LETTER||||W = (27-52) IF PRECEDED BY A LETTER|||
|G = IRLML2502||||Y = IRLML2246||||WORK||||
|H = IRLML5203||||Z = IRFML9244|YEAR||Y|WEEK||W||
|I = IRLML0030|||||2011|2001|A|27||A||
|J = IRLML2030|||||2012|2002|B|28||B||
|K = IRLML0100|||||2013|2003|C|29||C||
|L = IRLML0060|||||2015
2014|2005
2004|E
D|30||D||
|M = IRLML0040|||||2016|2006|F|||||
|N = IRLML2060||||DATE CODE EXAMPLE:|2017|2007|G|||||
|P = IRLML9301||||YWW = 432 = DF|2018|2008|H|||||
|R = IRLML9303||||YWW = 503 = 5C|2019|2009|J|||||
||||||2020|2010|K|50||X||
|||||||||51||Y||
|||||||||52||Z||
**Note: For the most current drawing please refer to IR website at http://www.irf.com/package**
## ™
**==> picture [383 x 289] intentionally omitted <==**
**----- Start of picture text -----**
2.05 ( .080 )1.95 ( .077 ) 4 - 4.1 ( .161 ) p 1.6 ( .062 )1.5 ( .060 ) 1.85 ( .072 ) 1.32 ( .051 )1.12 ( .045 )
3.9 ( .154 ) 1.65 ( .065 )
ae TR 66e6o6 6,4. 3.55 ( .139 ) 8.3 ( .326 )
3.45 ( .136 )
7.9 ( .312 )
VEREIe if—_
FEED DIRECTION 4.1 ( .161 )
3.9 ( .154 ) 1.1 ( .043 ) 0.35 ( .013 )
0.9 ( .036 ) 0.25 ( .010 )
178.00
( 7.008 )
MAX.
9.90 ( .390 )
Ly 8.40 ( .331 ) =| | =
**----- End of picture text -----**
**==> picture [138 x 13] intentionally omitted <==**
**----- Start of picture text -----**
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
**----- End of picture text -----**
**==> picture [143 x 6] intentionally omitted <==**
**----- Start of picture text -----**
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
**----- End of picture text -----**
**Note: For the most current drawing please refer to IR website at http://www.irf.com/package**
|**Qualification information**
†|||
|---|---|---|
|Qualification level|Consumer
(per JEDEC JESD47F
††guidelines)||
|Moisture Sensitivity Level|Micro3™(SOT-23)|MS L1
(per JEDEC J-STD-020D
††)|
|RoHS compliant|(per JEDEC J
)
Yes||
- Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
- †† Applicable version of JEDEC standard at the time of product release
## **Revision History**
|**Date**|**Comment**|
|---|---|
|4/28/2014|•Updated data sheet with new IR corporate template.
•Updated package outline & part marking on page 8.
•Added Qualification table -Qual level "Consumer" on page 10.
•Added bulletpoint in the Benefits "RoHS Compliant,Halogen -Free" onpage 1.|
**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/
## **IMPORTANT NOTICE**
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ).
## **WARNINGS**
Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
## Links
- [View this product on Novapart](https://novapart.co/products/IRLML6302TRPBF/power-mosfet-p-channel-20-v-600-ma-06-ohm-sot-23)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irlml6302trpbf/mosfet-p-logic-sot-23/dp/9103406RL)
---
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