# Power MOSFET, P Channel, 20 V, 780 mA, 0.6 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:2726011/)

**URL**: https://novapart.co/products/IRLML6302GTRPBF/power-mosfet-p-channel-20-v-780-ma-06-ohm-sot-23
**SKU**: IRLML6302GTRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.0800
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | HEXFET |
| Power Dissipation | 540mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | P Channel |
| Power Dissipation Pd | 540mW |
| Rds(On) Test Voltage | 4.5V |
| On Resistance Rds(On) | 0.6ohm |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 780mA |
| Drain Source On State Resistance | 0.6ohm |
| Gate Source Threshold Voltage Max | 1.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2726011/)

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|∆<br>∆<br>~~Ω~~<br>~~Ver)DSs~~<br>~~Drain-to-Source Breakdown Voltage~~<br>~~| -20|—-|-—-~~<br>~~| V_ | ~~<br>~~Verse! T,| Breakdown Voltage Temp. Coefficient | --- | -4.9 | —-- [mV/°C| ~~<br>~~a~~<br>~~| —-- | —— | 0.60 |~~<br>~~Rpson)~~<br>~~Static Drain-to-Source On-Resistance SS ~~<br>~~Vesith)~~<br>Gate Threshold Voltage<br>~~}-0.70]~~<br>~~—-| -1.5| V_ |~~<br>~~Os~~<br>~~Forward Transconductance~~<br>~~| 0.56] —-| —-| S$ | ~~<br>~~Ipss~~<br>~~Drain-to-Source Leakage Current~~<br>~~| | | -1.0 |~~<br>~~yA~~<br>~~| -——-| —-| -25 |~~<br>~~less~~<br>~~Gate-to-Source Forward Leakage~~<br>~~| ——| —| -100 | nA~~<br>~~Gate-to-Source Reverse Leakage~~<br>~~| --- | —— | 100 |~~<br>~~Qg~~<br>~~Total Gate Charge~~<br>~~| —-| 24] 3.6 |~~<br>~~Qgs~~<br>~~Gate-to-Source Charge~~<br>~~| —-- | 0.56] 0.84) nC | ~~<br>~~Qua~~<br>~~Gate-to-Drain ("Miller") Charge~~<br>~~| —-| 1.0] 1.5 |~~<br>~~ta(on)~~<br>~~Turn-On Delay Time~~<br>~~|---| 13 | -— |~~<br>~~i~~<br>~~fRiseTime~~<br>~~———S~w~~<br>~~| 18 ~~~~**|** ~~~~**—** | ,, | ~~<br>~~ta(otf)~~<br>~~Turn-Off Delay Time~~<br>~~|---| 22~~<br>~~|~~<br>~~tr~~<br>~~Fall Time~~<br>~~|---| 22 | —|~~<br>~~Ciss~~<br>~~Input Capacitance~~<br>~~|---| 97 | -—|~~<br>~~Coss~~<br>~~Output Capacitance~~<br>~~| —| 53 | —— |~~<br>~~pF | ~~<br>Ciss<br>Reverse Transfer Capacitance<br>| —| 28 | — ||∆<br>∆<br>~~Ω~~<br>~~Ver)DSs~~<br>~~Drain-to-Source Breakdown Voltage~~<br>~~| -20|—-|-—-~~<br>~~| V_ | ~~<br>~~Verse! T,| Breakdown Voltage Temp. Coefficient | --- | -4.9 | —-- [mV/°C| ~~<br>~~a~~<br>~~| —-- | —— | 0.60 |~~<br>~~Rpson)~~<br>~~Static Drain-to-Source On-Resistance SS ~~<br>~~Vesith)~~<br>Gate Threshold Voltage<br>~~}-0.70]~~<br>~~—-| -1.5| V_ |~~<br>~~Os~~<br>~~Forward Transconductance~~<br>~~| 0.56] —-| —-| S$ | ~~<br>~~Ipss~~<br>~~Drain-to-Source Leakage Current~~<br>~~| | | -1.0 |~~<br>~~yA~~<br>~~| -——-| —-| -25 |~~<br>~~less~~<br>~~Gate-to-Source Forward Leakage~~<br>~~| ——| —| -100 | nA~~<br>~~Gate-to-Source Reverse Leakage~~<br>~~| --- | —— | 100 |~~<br>~~Qg~~<br>~~Total Gate Charge~~<br>~~| —-| 24] 3.6 |~~<br>~~Qgs~~<br>~~Gate-to-Source Charge~~<br>~~| —-- | 0.56] 0.84) nC | ~~<br>~~Qua~~<br>~~Gate-to-Drain ("Miller") Charge~~<br>~~| —-| 1.0] 1.5 |~~<br>~~ta(on)~~<br>~~Turn-On Delay Time~~<br>~~|---| 13 | -— |~~<br>~~i~~<br>~~fRiseTime~~<br>~~———S~w~~<br>~~| 18 ~~~~**|** ~~~~**—** | ,, | ~~<br>~~ta(otf)~~<br>~~Turn-Off Delay Time~~<br>~~|---| 22~~<br>~~|~~<br>~~tr~~<br>~~Fall Time~~<br>~~|---| 22 | —|~~<br>~~Ciss~~<br>~~Input Capacitance~~<br>~~|---| 97 | -—|~~<br>~~Coss~~<br>~~Output Capacitance~~<br>~~| —| 53 | —— |~~<br>~~pF | ~~<br>Ciss<br>Reverse Transfer Capacitance<br>| —| 28 | — ||∆<br>∆<br>~~Ω~~<br>~~Ver)DSs~~<br>~~Drain-to-Source Breakdown Voltage~~<br>~~| -20|—-|-—-~~<br>~~| V_ | ~~<br>~~Verse! T,| Breakdown Voltage Temp. Coefficient | --- | -4.9 | —-- [mV/°C| ~~<br>~~a~~<br>~~| —-- | —— | 0.60 |~~<br>~~Rpson)~~<br>~~Static Drain-to-Source On-Resistance SS ~~<br>~~Vesith)~~<br>Gate Threshold Voltage<br>~~}-0.70]~~<br>~~—-| -1.5| V_ |~~<br>~~Os~~<br>~~Forward Transconductance~~<br>~~| 0.56] —-| —-| S$ | ~~<br>~~Ipss~~<br>~~Drain-to-Source Leakage Current~~<br>~~| | | -1.0 |~~<br>~~yA~~<br>~~| -——-| —-| -25 |~~<br>~~less~~<br>~~Gate-to-Source Forward Leakage~~<br>~~| ——| —| -100 | nA~~<br>~~Gate-to-Source Reverse Leakage~~<br>~~| --- | —— | 100 |~~<br>~~Qg~~<br>~~Total Gate Charge~~<br>~~| —-| 24] 3.6 |~~<br>~~Qgs~~<br>~~Gate-to-Source Charge~~<br>~~| —-- | 0.56] 0.84) nC | ~~<br>~~Qua~~<br>~~Gate-to-Drain ("Miller") Charge~~<br>~~| —-| 1.0] 1.5 |~~<br>~~ta(on)~~<br>~~Turn-On Delay Time~~<br>~~|---| 13 | -— |~~<br>~~i~~<br>~~fRiseTime~~<br>~~———S~w~~<br>~~| 18 ~~~~**|** ~~~~**—** | ,, | ~~<br>~~ta(otf)~~<br>~~Turn-Off Delay Time~~<br>~~|---| 22~~<br>~~|~~<br>~~tr~~<br>~~Fall Time~~<br>~~|---| 22 | —|~~<br>~~Ciss~~<br>~~Input Capacitance~~<br>~~|---| 97 | -—|~~<br>~~Coss~~<br>~~Output Capacitance~~<br>~~| —| 53 | —— |~~<br>~~pF | ~~<br>Ciss<br>Reverse Transfer Capacitance<br>| —| 28 | — ||Ω<br>Ω,<br> ~~Vos = OV, Ip = -250uA~~<br> ~~Reference to 25°C, Ip = -1mA~~<br>~~Ves = -4.5V, Ip = -0.61A @~~<br> ~~**V**as = -2.7V, lp =-0.31A ©~~<br>~~ps=~~<br>~~Ves, Ip = -250uA~~<br> ~~Vps =-10V, Ip = -0.31A~~<br>~~Vos = -16V, Vas = OV~~<br>~~Vps = -16V, Ves = OV, Ty = 125°C~~<br>~~Ves = -12V~~<br>~~Vas = 12V~~<br>~~Ip = -0.61A~~<br> ~~Vps = -16V~~<br>~~Ves = -4.5V, See Fig.~~<br>~~6 and 9 ®~~<br>~~Vop = -10V~~<br> ~~= OCIA~~<br>~~Re =6.2~~<br>~~Rp=16~~<br>~~See Fig. 10 ®~~<br>~~Vas = OV~~<br> ~~Vps = -15V~~<br>f =1.0MHz, See Fig. 5|||
|---|---|---|---|---|---|
|Source-Drain Ratings and Characteristics||||||
|**Parameter**<br>**Min. Typ. Max. Units**|||**Conditions**|||
|IS<br>Continuous Source Current|||MOSFET symbol||D|
|(Body Diode)<br>ISM<br>Pulsed Source Current<br>A|||showing  the<br>integral reverse<br>G|||
|(BodyDiode)|||p-njunction diode.||S|
|VSD<br>Diode Forward Voltage<br>–––<br>–––<br>-1.2<br>V<br>TJ= 25°C, IS= -0.61A, VGS= 0V<br>trr<br>Reverse Recovery Time<br>–––<br>35<br>53<br>ns<br>TJ= 25°C, IF= -0.61A<br>Qrr<br>Reverse Recovery Charge<br>–––<br>26<br>39<br>nC<br>di/dt = -100A/µs<br>~~ass~~<br>~~-—~~<br>®||||||



> ≤ 300us; duty cycle ≤ 2%. on FR-4 board, t ≤ 

ISD ≤ ≤ ≤ ≤ 

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10  TOP         - 7.5V                 - 5.0V neepT PT Ppp eee<br>                 - 4.0V<br>                 - 3.5V Sense > emnnall<br>                 - 3.0V Seen —_____.<br>                 - 2.5V<br>                 - 2.0V<br> BOTTOM - 1.5V<br>1 Ge<br>—— Ses<br>(\ Fo<br>ZZ eee<br>GZ<br>0.1 ae<br>at<br>aee<br>0.01 TEELY -1.5V  T   = 25°CJ<br>TH snr<br>0.1 1 10<br>-V     , Drain-to-Source Voltage (V)DS<br>Fig 1. Typical Output Characteristics<br>10 SSS T  = 25°CJ =<br>e s<br>eeaSee T  = 150°CJ a|<br>1 — a a<br>nan=a |a nn Tn _<br>ee A4eeaeeeee<br>Te<br>0.1 SASS<br>aS<br>@aAe eee ee ee eee eee<br> V     = -10VDS<br>0.01 fTcys purse wor<br>PT [LTT] sn euse wore<br>1.5 2.0 2.5 3.0 3.5 4.0 4.5<br>-V     , Gate-to-Source Voltage (V)GS<br>D<br>-I   , Drain-to-Source Current (A)<br>D<br>-I   , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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10<br> TOP         - 7.5V                 - 5.0V VastA A A OS A OOO<br>                 - 4.0V<br>                 - 3.5V So<br>                 - 3.0V Co ar<br>                 - 2.5V<br>                 - 2.0V<br> BOTTOM - 1.5V<br>1 Jgg<br>—— 6ees<br>mee ea<br>mS 2d ee<br>verre<br>0.1 Zaza<br>eS eee<br>-1.5V<br>aeoo — meen<br> 20µs PULSE WIDTH<br> T   = 150°CJ<br>0.01<br>0.1 c oi 1 10<br>-V     , Drain-to-Source Voltage (V)DS<br>D<br>-I   , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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2.0 M LL<br>1.5<br>PLE EEEEEL<br>ateae<br>1.0 er et  TL<br>eae EL<br>0.5 CHAPEL<br>E<br>CEE<br>0.0 PV<br>ew<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>T   , Junction Temperature (°C)J<br>(Normalized)<br>DS(on)<br>R           ,  Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


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10<br> I    = -0.61ADD<br> V     = -16V DS DS<br>8 FPee<br>ee<br>aaa<br>6 ee eee ee<br>4 SaEEe VA<br>nn a ae<br>|<br>2 | ‘po”po” A | |<br>0 YeJ —|— —|— |ronretrorcimronretrorcim     SEE FIGURE 9 on test ees<br>0.0 1.0 2.0 3.0 4.0<br>Q   , Total Gate Charge (nC)GG<br>GS<br>-V     , Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


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180 10<br>V      = 0V,         f = 1MHzGS  I    = -0.61ADD<br>160 C      = C     + C     ,   C     SHORTEDC      = Ciss         gs         gd         dsrss         gd  V     = -16V DS DS<br>a] C      = C     + Coss        ds         gd 8 FPee<br>140 s<br>SF ee<br>120<br>ss<br>SS aaa<br>a 6 ee eee ee<br>NE Se<br>100<br>80<br>ESS ; CHE 4 SaEEe VA<br>ss<br>60<br>So NE nn a ae<br>SS |<br>40 eS<br>a 2 | ‘po”po” A | |<br>20<br>0 aSeeee A 0 J —|—YeJ —|— —|— |ronretrorcimronretrorcim     SEE FIGURE 9 on test ees<br>1 10 100 0.0 1.0 2.0 3.0 4.0<br>-V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)GG<br>Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>10 10<br> OPERATION IN THIS AREA LIMITED<br>                       BY R<br>DS(on)<br>a in ox! an<br>1 pe| | vyter| aes SLPS ET 100µs e elT<br>T  = 150°CJ<br>a 7 YA NC!<br>f f 1 a ill<br>T  = 25°CJ 1ms<br>fp ==eeSeee S PTS<br>0.1<br>fff poe areca emerTT Try<br>FFA 10ms<br>Freee UL N<br>0.01 A re A 0.1  Single Pulse see THIEL ETI<br>0.4 0.6 0.8 1.0 1.2 1.4 1 10 100<br>-V     , Source-to-Drain Voltage (V)SD -V     , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>GS<br>-V     , Gate-to-Source Voltage (V)<br>D<br>-I   , Drain Current (A)<br>SD<br>-I     , Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


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-4.5V — QG Vycs D.U.T.<br>i QGS QGD Re<br>+- Vop<br>VG<br>)} -4.5V<br>Pulse Width ≤ 1  ys<br>Duty Factor ≤ 0.1 %<br>Charge<br>Fig 9a. Basic Gate Charge Waveform Fig 10a. Switching Time Test Circuit<br>Current Regulator<br>Same Type as D.U.T.<br>VDS<br>50KΩ 90%<br>12V .2µF<br>tf] =m) .3µF X ||<br>-<br>Lo b+ —_+—_+—___ = D.U.T. +VDS |<br>10%<br>VGS VGS l \<br>-3mA I | t \< d(on) m< tr >| td(off) mle tf<br>on /\<br>AW IG ID<br>Current Sampling Resistors<br>Fig 9b. Gate Charge Test Circuit Fig 10b. Switching Time Waveforms<br> 1000<br>sa aeef aT | TTT<br>en ee<br>D = 0.50<br> 100 e rr<br>0.20<br>Sn 0.10 emer See | | | |<br>a ——<br>0.05<br> 10<br>0.02<br>0.01 PDM<br>ee acl eee TE<br>ee SINGLE PULSE t1<br> 1 = (THERMAL RESPONSE) t2<br>Notes:<br>a en ee ee 1. Duty factor D = t   / t1 2<br>e e 2. Peak T J = P DM x  Z thJA + TA<br>0.1<br>0.00001 0.0001 0.001 0.01 0.1  1  10  100<br>t  , Rectangular Pulse Duration (sec)1<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


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D.U.T + Circuit Layout Considerations<br>™    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| I - Current Transformer<br>+<br>- - +<br>(0<br>Kk<br>®<br>Re •   dv/dt controlled by Rg +<br>•   Isp controlled by Duty Factor "D" -<br>‘ •   D.U.T. - Device Under Test<br>* Reverse Polarity for P-Channel<br>** Use P-Channel Driver for P-Channel Measurements<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. — Period _t<br>[<br>‘<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current i Current di/dt fs<br>©) D.U.T. VDS Waveform<br>Diode Recoverydv/dt \ F<br>[,<br>Re-Applied<br>Voltage Body Diode  Forward Drop<br>® Inductor Curent ee<br>Ripple  ≤ 5% [ ]<br>**----- End of picture text -----**<br>


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A 6 A A 5 PO DIMENSIONS<br>D MILLIMETERS INCHES<br>— SYMBOL ee ee<br>MIN MAX MIN MAX<br>Pee<br>Hy 0.035 A 0.89 1.12 | 0.044<br>3 E A1 0.01 0.10 0.0004<br>A 6 TT E1 oe nan 1 2 0.15 [0.006] M C B A 0.035ff0.012 A2b 0.880.30 1.020.50 | 0.0 0440<br>W) | Uj | c 0.08 0.20 0.003 | 0.0200.008 |<br>An) 5 B Cee e A 0.410 D 2.80 3.04 | 0.120 |<br>e1 E 2.10 2.64<br>+ }+1 0.083<br>A | E1 0.047 1.20 1.40 | 0.104 |<br>A2 C H A 4 L1 e 0.95 BSC | 0.055<br>c e1 1.90 BSC<br>cy of 0.037 BSC<br>L 0.40 0.60<br>A1 0.10 [0.004] C L2 L1 0.54 REF REF<br>L 3X b 3X L ee<br>0.20 [0.008] M C B A  7 L2 0.25 BSC BSC<br>son A ort<br>| @ | 0 ft 8 Jf 0 ff 8<br>Recommended Footprint NOTES:<br>1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994<br>0.972 2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>3. CONTROLLING DIMENSION: MILLIMETER.<br>0.802 | 0.950 2.742 | 5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H. 4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.<br>6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES<br>  NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS<br>fA 7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.  OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.<br>8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.<br>L 1.900 [°]<br>**----- End of picture text -----**<br>


## Micro3 (SOT-23 / TO-236AB)  Part Marking Information 

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**----- Start of picture text -----**<br>
Micro3 / SOT-23 Package Marking<br>**----- End of picture text -----**<br>


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W = WEEKY = YEAR vo 1 a<br>PART NUMBER 2003 3 03 Cc<br>2004 4 04 D<br>A YW LC 2005 5<br>2006 6<br>HALOGEN FREE | LOT  20022008 28 02 B<br> INDICATOR CODE 200 73 g7 | |<br>2010 0 24 !<br>2 Y<br>26 "<br>PART NUMBER CODE REFERENCE:<br>W = (27-52) IF PRECEDED BY<br>A = IRLML2402<br>B =IRLML2803 YEAR Y WEEKWORK<br>C = IRLML2402D = IRLML5103E = IRLML6402 “2001FO200220032004 ABCcD 28230 BCcD<br>F = IRLML6401 2005 E<br>G = IRLML2502<br>H = IRLML5203 20072008 # G<br>200 83 $ =F | |<br>Note: A line above the work week 2010 50 !<br>(as shown here) indicates Lead-free   51 Y<br>52 "<br>**----- End of picture text -----**<br>


**Note: For the most current drawing please refer to IR website at http://www.irf.com/package** 

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## ™ 

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2.05 ( .080 )1.95 ( .077 ) 4 4.1 ( .161 ) d 1.6 ( .062 )1.5 ( .060 ) 1.85 ( .072 ) 1.32 ( .051 )1.12 ( .045 )<br>3.9 ( .154 ) 1.65 ( .065 )<br>60 TR e6eooo 6 O44 3.55 ( .139 ) 8.3 ( .326 )<br>3.45 ( .136 )<br>7.9 ( .312 )<br>VEEIRIE ej<br>FEED DIRECTION 4.1 ( .161 )<br>3.9 ( .154 ) 1.1 ( .043 ) 0.35 ( .013 )<br>0.9 ( .036 ) 0.25 ( .010 )<br>  178.00<br>( 7.008 )<br>    MAX.<br>9.90 ( .390 )<br>aN 8.40 ( .331 ) a j=<br>**----- End of picture text -----**<br>


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NOTES:<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>2.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>**----- End of picture text -----**<br>


**Note: For the most current drawing please refer to IR website at http://www.irf.com/package** 

Data and specifications subject to change without notice. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 07/2008 

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