# Power MOSFET, N Channel, 20 V, 4.1 A, 0.046 ohm, TO-236AB (SOT-23), Surface Mount

![Product image](https://novapart.co/image/farnell:3155157RL/)

**URL**: https://novapart.co/products/IRLML6246TRPBF/power-mosfet-n-channel-20-v-41-a-0046-ohm-to-236ab
**SKU**: IRLML6246TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.0900
**Stock**: 1000+
**Lead Time**: 190 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:4.1A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.03ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:800mV;

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET Series |
| Qualification | - |
| Power Dissipation | 1.3W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 1.3W |
| Rds(On) Test Voltage | 4.5V |
| On Resistance Rds(On) | 0.03ohm |
| Transistor Case Style | TO-236AB (SOT-23) |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 4.1A |
| Drain Source On State Resistance | 0.046ohm |
| Automotive Qualification Standard | - |
| Gate Source Threshold Voltage Max | 1.1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3155157RL/)

PD - 97529A 

## IRLML6246TRPbF HEXFET , Power MOSFET 

||**VDS**|**20**|**V**|
|---|---|---|---|
||**VGS Max**|**± 12**|**V**|
|(|**RDS(on) max**<br>@VGS= 4.5V)<br>~~|~~<br>~~|~~|**46**<br>~~|fe~~<br>~~|~~|**m**<br>~~fe~~<br>|
|(|**RDS(on) max**<br>@VGS= 2.5V)<br>~~|~~<br>~~|~~|**66**<br>~~| fe~~<br>~~|fe~~|**m**<br>~~fe~~<br>~~fe~~|
|||||



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G 1<br>3 D<br>S 2 Micro3 [TM] (SOT-23)<br>IRLML6246TRPbF<br>**----- End of picture text -----**<br>


## **Application(s)** 

- Load/ System Switch 

## **Features and Benefits** 

## **Features** 

## **Benefits** 

Industry-standard SOT-23 Package Multi-vendor compatibility RoHS compliant containing no lead, no bromide and no halogen results in Environmentally friendly 

## **Absolute Maximum Ratings** 

|**Symbol**|**Parameter**|**Max.**|**Max.**|**Units**|
|---|---|---|---|---|
|VDS|Drain-Source Voltage|20||V|
|ID@ TA= 25°C|Continuous Drain Current,VGS@ 10V|4.1|||
|ID@ TA= 70°C|Continuous Drain Current,VGS@ 10V|3.3||A|
|IDM|Pulsed Drain Current|16|||
|PD@TA= 25°C|Maximum Power Dissipation|1.3||W|
|PD@TA= 70°C|Maximum Power Dissipation|0.8|||
||Linear DeratingFactor|0.01||W/°C|
|VGS|Gate-to-Source Voltage|± 12||V|
|TJ,TSTG|Junction and Storage Temperature Range|-55  to + 150|-55  to + 150|°C|
|**Thermal Resistance**|||||
|**Symbol**<br>**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>RθJA<br>Junction-to-Ambient<br>–––<br>100<br>RθJA<br>Junction-to-Ambient(t<10s)<br>–––<br>99<br>°C/W<br>~~es~~<br>~~ee~~|||||
|_ORDERING INFORMATION:_|||||
|_See detailed ordering and shipping information on the last page of this data sheet._||_See detailed ordering and shipping information on the last page of this data sheet._|||



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## �������������� 

## **Electric Characteristics @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**|**Parameter**|**Min. **|**Typ. **|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage|20|–––|–––|V|VGS=0V,ID= 250μA|
|ΔV(BR)DSS/ΔTJ|Breakdown Voltage Temp.Coefficient|–––|0.03|–––|V/°C|Reference to 25°C,ID= 1mA|
|RDS(on)|Static Drain-to-Source On-Resistance|–––|30|46|mΩ|VGS= 4.5V,ID= 4.1A�|
|||–––|45|66||VGS= 2.5V,ID= 3.3A�|
|VGS(th)|Gate Threshold Voltage|0.5|0.8|1.1|V|VDS =VGS, ID =5μA|
|IDSS|Drain-to-Source Leakage Current|–––|–––|1.0|μA|VDS =16V, VGS =0V|
|||–––|–––|10||VDS= 16V,VGS=0V,TJ=55°C|
|||–––|–––|150||VDS= 16V,VGS=0V,TJ= 125°C|
|IGSS|Gate-to-Source Forward Leakage|–––|–––|100|nA|VGS= 12V|
||Gate-to-Source Reverse Leakage|–––|–––|-100||VGS= -12V|
|RG|InternalGate Resistance|–––|4.0|–––|Ω||
|gfs|Forward Transconductance|10|–––|–––|S|VDS =10V, ID =4.1A|
|Qg|Total Gate Charge|–––|3.5|–––|nC|VGS= 4.5V�<br>VDS=10V<br>ID= 4.1A|
|Qgs|Gate-to-SourceCharge|–––|0.26|–––|||
|Qgd|Gate-to-Drain("Miller") Charge|–––|1.7|–––|||
|td(on)|Turn-On DelayTime|–––|3.6|–––|ns|ID= 1.0A<br>RG= 6.8Ω<br>VGS =4.5V<br>VDD=10V�|
|tr|Rise Time|–––|4.9|–––|||
|td(off)|Turn-Off Delay Time|–––|11|–––|||
|tf|Fall Time|–––|6.0|–––|||
|Ciss|InputCapacitance|–––|290|–––|pF|VDS= 16V<br>ƒ= 1.0MHz<br>VGS= 0V|
|Coss|OutputCapacitance|–––|64|–––|||
|Crss|Reverse TransferCapacitance|–––|41|–––|||
|**Source- Drain Ratings and Characteristics**|||||||
|<br>**Symbol**|<br>**Parameter**|<br>**Min. **|**Typ. **|**Max. **|**Units**|**Conditions**|
|IS|Continuous Source Current<br>(Body Diode)|–––|–––|1.3|A|D<br>S<br>G<br>integral reverse<br>p-n junction diode.<br>MOSFET symbol<br>showing  the|
|ISM|<br>Pulsed Source Current<br>(Body Diode)��|–––|–––|16|||
|VSD|Diode Forward Voltage|–––|–––|1.2|V|TJ= 25°C,IS= 4.1A,VGS=0V�|
|trr|Reverse RecoveryTime|–––|8.6|13|ns|TJ= 25°C, VR= 15V, IF=1.3A<br>di/dt=100A/μs�|
|Qrr|Reverse Recovery Charge|–––|2.8|4.2|nC||



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## �������������� 

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**----- Start of picture text -----**<br>
100<br>≤ 60μs  PULSE WIDTH<br>Tj = 25 ° C<br>10<br>1<br>VGS<br>TOP           10V<br>1.5V 4.5V<br>3.0V<br>0.1 2.5V<br>2.3V<br>2.0V<br>1.8V<br>BOTTOM 1.5V<br>0.01<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical Output Characteristics 

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**----- Start of picture text -----**<br>
100<br>10<br>T = 150°C<br>J<br>1<br>T = 25°C<br>J<br>V DS  = 15V<br>≤ 60μs PULSE WIDTH<br>0.1<br>1.0 1.5 2.0 2.5 3.0 3.5<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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**----- Start of picture text -----**<br>
100<br>≤ 60μs  PULSE WIDTH<br>Tj = 150°C<br>10<br>VGS<br>TOP           10V<br>1 1.5V 4.5V<br>3.0V<br>2.5V<br>2.3V<br>2.0V<br>1.8V<br>BOTTOM 1.5V<br>0.1<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 2.** Typical Output Characteristics 

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**----- Start of picture text -----**<br>
2.0<br>ID = 4.1A<br>VGS = 4.5V<br>1.5<br>1.0<br>0.5<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance Vs. Temperature 

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## �������������� 

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**----- Start of picture text -----**<br>
10000 14.0<br>VGS   = 0V,       f = 1 MHZ I = 4.1A<br>Ciss   = C gs + Cgd,  C ds SHORTED D VDS= 16V<br>C  = C 12.0<br>rss   gd  VDS= 10V<br>Coss  = Cds + Cgd 10.0 V DS = 4.0V<br>1000<br>8.0<br>C<br>iss<br>6.0<br>C<br>oss<br>100<br>Crss 4.0<br>2.0<br>10 0.0<br>1 10 100 0.0 2.0 4.0 6.0 8.0<br>VDS, Drain-to-Source Voltage (V)  QG,  Total Gate Charge (nC)<br>C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance Vs. Drain-to-Source Voltage 

**Fig 6.** Typical Gate Charge Vs. Gate-to-Source Voltage 

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**----- Start of picture text -----**<br>
100<br>10<br>T = 150°C<br>J<br>1<br>T = 25°C<br>J<br>0<br>V GS  = 0V<br>0.0<br>0.2 0.4 0.6 0.8 1.0 1.2<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
100<br>OPERATION IN THIS AREA<br>LIMITED BY RDS(on)<br>10 100μsec<br>1msec<br>1<br>10 ms ec<br>0.1 TA = 25°C<br>Tj = 150°C<br>Single Pulse<br>0.01<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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## �������������� 

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**----- Start of picture text -----**<br>
5.0<br>��<br>���<br>4.0 ���<br>������<br>��<br>+<br>- [�] ��<br>3.0<br>���<br>������������≤ 1 ��<br>2.0 ������������≤ 0.1 %<br>Fig 10a.   Switching Time Test Circuit<br>1.0<br>VDS<br>0.0 90%<br>25 50 75 100 125 150<br>TA , Ambient Temperature (°C)<br>10%<br>Fig 9.   Maximum Drain Current Vs. VGS<br> Ambient Temperature td(on) tr td(off) tf<br>Fig 10b.   Switching Time Waveforms<br>1000<br>100<br>D = 0.50<br>0.20<br>10 0.10<br>0.05<br>0.02<br>1 0.01<br>0.1 Notes:<br>SINGLE PULSE<br>1. Duty Factor D = t1/t2<br>( THERMAL RESPONSE )<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.01<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10<br>t1 , Rectangular Pulse Duration (sec)<br>ID  , Drain Current (A)<br>Thermal Response ( Z thJA )<br>**----- End of picture text -----**<br>


**Fig 11.** Typical Effective Transient Thermal Impedance, Junction-to-Ambient 

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## �������������� 

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**----- Start of picture text -----**<br>
80<br>I = 4.1A<br>D<br>60<br>TJ = 125°C<br>40<br>TJ = 25°C<br>20<br>0 1 2 3 4 5 6 7 8 9 10 11 12<br>VGS, Gate -to -Source Voltage  (V)<br>Ω )<br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
120<br>100<br>80<br>Vgs = 4.5V<br>60<br>40 Vgs = 10V<br>20<br>0 5 10 15 20 25 30<br>ID, Drain Current (A)<br>) Ω<br>RDS(on),  Drain-to -Source On Resistance ( m<br>**----- End of picture text -----**<br>


**Fig 12.** Typical On-Resistance Vs. Gate Voltage 

**Fig 13.** Typical On-Resistance Vs. Drain Current 

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**----- Start of picture text -----**<br>
Id<br>Vds<br>Vgs<br>L<br>VCC<br>DUT<br>0<br>Vgs(th) S<br>201 K<br>Qgodr Qgd Qgs2 Qgs1<br>**----- End of picture text -----**<br>


**Fig 14a.** Basic Gate Charge Waveform 

**Fig 14b.** Gate Charge Test Circuit 

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## �������������� 

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**----- Start of picture text -----**<br>
1.5 100<br>80<br>1.0<br>60<br>ID = 10uA<br>40<br>0.5 I D  = 250uA<br>20<br>0.0 0<br>1E-005 0.0001 0.001 0.01 0.1 1 10<br>-75 -50 -25 0 25 50 75 100 125 150<br>Time (sec)<br>TJ , Temperature ( °C )<br>VGS(th), Gate threshold Voltage (V)<br>Power (W)<br>**----- End of picture text -----**<br>


**Fig 15.** Typical Threshold Voltage Vs. Junction Temperature 

**�������** Typical Power Vs. Time 

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## ™ 

**==> picture [403 x 227] intentionally omitted <==**

**----- Start of picture text -----**<br>
DIMENSIONS<br>6 A 5 MILLIMETERS INCHES<br>A D PO SYMBOL MIN MAX MIN MAX<br>A 0085 A es 0.89 1.12<br>7 o4 A2 C Poof A1 0.01 0.10 0.0004<br>e l 3 E A2 0.88 1.02 00a<br>6 E1 1 2 0.15 [0.006] | M C B A {t I - b 0.30 as 0.50<br>0.10 [0.004] C c 0.08 0.20<br>TH ooo rWt A1 | 4bSE 3X b esfF D 2.80 3.04 oe<br>An 5 B + e 4i e1 | NOTES: s @—_onn 0.20 [0.008] M C B A ||| E1Ee 0.087 1.202.100.95 || BSC1.402.64 o-tt00.0830.047 ||0.1200.1040.055 ||<br>| e1L 0.075 1.900.40 BSC0.60 BSCBSc<br>H A 4 i” L1 Recommended Footprint —ee L1 | 0.54 | REF 0.016 | 0.024 REF |<br>8| c 0.972 — L2 0.250 BSC8 0 BSC8<br>Tf L2 0.802 —— 0.950 2.742<br>3X L 1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994<br>2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>“  7 a 3. CONTROLLING DIMENSION: MILLIMETER.4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.<br>1.900 5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.<br>LE A 6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES<br>  NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS<br>  OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.<br>A 7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.<br>8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.<br>**----- End of picture text -----**<br>


## ™ 

W =  (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR 

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**----- Start of picture text -----**<br>
DATE CODE<br>PART NUMBER LEAD FREE<br>Cu WIRE LOT CODE<br>HALOGEN FREE<br>X =  PART NUMBER CODE REFERENCE:<br>A =  IRLML2402 S =  IRLML6244<br>B =  IRLML2803 T =  IRLML6246<br>C =  IRLML6302 U=  IRLML6344<br>D =  IRLML5103 V =  IRLML6346<br>E =  IRLML6402<br>F =  IRLML6401<br>G =  IRLML2502<br>H =  IRLML5203<br>I  =  IRLML0030<br>J =  IRLML2030<br>K =  IRLML0100<br>L =  IRLML0060<br>M =  IRLML0040<br>N =  IRLML2060<br>P =  IRLML9301<br>R =  IRLML9303<br>**----- End of picture text -----**<br>


Note: A line above the work week (as shown here) indicates Lead - Free. 

**==> picture [97 x 203] intentionally omitted <==**

**----- Start of picture text -----**<br>
WORK<br>YEAR Y WEEK W<br>2001 1 01 A<br>2002 2 02 B<br>2003 3 03 C<br>2004 4 04 D<br>2005 5<br>2006 6<br>2007 7<br>2008 8<br>2009 9<br>2010 0 24 X<br>25 Y<br>26 Z<br>W =  (27-52) IF PRECEDED BY A LETTER<br>WORK<br>YEAR Y WEEK W<br>2001 A 27 A<br>2002 B 28 B<br>2003 C 29 C<br>2004 D 30 D<br>2005 E<br>2006 F<br>2007 G<br>2008 H<br>2009 J<br>2010 K 50 X<br>51 Y<br>52 Z<br>**----- End of picture text -----**<br>


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## ™ (SOT-23) Tape & Reel Information 

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**----- Start of picture text -----**<br>
2.05 ( .080 ) 1.6 ( .062 ) 1.32 ( .051 )<br>1.95 ( .077 ) 4.1 ( .161 ) 1.5 ( .060 ) 1.85 ( .072 ) 1.12 ( .045 )<br>3.9 ( .154 ) 1.65 ( .065 )<br>60 TR 66 oo 6 o4— 3.55 ( .139 ) | 8.3 ( .326 )<br>3.45 ( .136 ) 7.9 ( .312 )<br>\EIEIERIE IE IE}<br>FEED DIRECTION 4.1 ( .161 )<br>—. t T 3.9 ( .154 ) 1.1 ( .043 ) t L 0.35 ( .013 )<br>0.9 ( .036 ) 0.25 ( .010 )<br>  178.00<br>( 7.008 )<br>    MAX.<br>9.90 ( .390 )<br>aN 8.40 ( .331 ) = i e<br>NOTES:<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>**----- End of picture text -----**<br>


2.  OUTLINE CONFORMS TO EIA-481 & EIA-541. 

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|**Orderable part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Note**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|IRLML6246TRPbF|Micro3™(SOT-23)|Tape and Reel|3000||



**Qualification information** † 

|**Qualification information**<br>†|||
|---|---|---|
|Qualification level|Consumer††<br>(per JEDEC JESD47F<br>†††guidelines )||
|Moisture Sensitivity Level|Micro3™(SOT-23)|MSL1<br>(per IPC/JEDEC J-STD-020D<br>†††)|
|RoHS compliant|Yes||



; Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Ho Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ tt Applicable version of JEDEC standard at the time of product release. 

Repetitive rating;  pulse width limited by max. junction temperature. Pulse width ≤ 400μs; duty cycle ≤ 2%. Surface mounted on 1 in square Cu board Refer to application note #AN-994. 

## **Revision History** 

|**Revision History**||||
|---|---|---|---|
|**Date**|||**Comments**|
|10/12/2012|Added IDSS @ 16V, T|Added IDSS @ 16V, TJ=55C|55C-pg2|



Data and specifications subject to change without notice. 

**IR WORLD HEADQUARTERS:** 101N. Sepulveda blvd, El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 10/2012 

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10 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



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