# Power MOSFET, P Channel, 30 V, 3 A, 0.098 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:9103511RL/)

**URL**: https://novapart.co/products/IRLML5203TRPBF/power-mosfet-p-channel-30-v-3-a-0098-ohm-sot-23
**SKU**: IRLML5203TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.0960
**Stock**: 1000+
**Lead Time**: 120 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:-3A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.098ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | HEXFET Series |
| Qualification | - |
| Power Dissipation | 1.25W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 3A |
| Drain Source On State Resistance | 0.098ohm |
| Gate Source Threshold Voltage Max | 2.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:9103511RL/)

~~e~~ Ultra Low On-Resistance HEXFET ~~e~~ P-Channel MOSFET ~~°~~ Surface Mount **VDSS RDS(on)** ~~;~~ Available in Tape & Reel **-30V** 98@VGS e Low Gate Charge 

|**VDSSDSS**<br>**-30V**<br>~~e~~<br>~~°~~<br>~~;~~|**RDS(on)DS(on) max(m**<br>~~e~~<br>~~°~~|**ID**<br>-3.0A<br>-2.6A|
|---|---|---|
||**RDS(on)DS(on)**<br>98@VGSGS= -10V<br>~~;~~<br>~~OO~~||
||165@VGS= -4.5V||



Lead-Free 

RoHS Compliant, Halogen-Free 

## **Description** 

These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.  This benefit provides the designer with an extremely efficient device for use in battery and load management applications. 

A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3[TM] , is ideal for applications where printed circuit board space is at a premium.  The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available. 

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G 1<br>3 D<br>S 2<br>Micro3 [TM]<br>**----- End of picture text -----**<br>


|**Base Part  Number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Orderable Part Number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|IRLML5203TRPbF|Micro3™ (SOT-23)|Tape and Reel|3000|IRLML5203TRPbF|



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a Parameter Max. Units<br>VDS Drain- Source Voltage -30 V<br>es<br>ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -3.0<br>a<br>ID @ TA= 70°C Continuous Drain Current, VGS @ -10V -2.4 A<br>a<br>© IDM Pulsed Drain Current  -24<br>PD @TA = 25°C Power Dissipation 1.25<br>en37 PD @TA = 70°C Power Dissipation Sp 0.80<br>Linear Derating Factor 10 mW/°C<br>es<br>VGS Gate-to-Source Voltage  ± 20 V<br>eseG<br>TJ, TSTG Junction and Storage Temperature Range -55  to + 150 °C<br>es<br>**----- End of picture text -----**<br>


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Thermal Resistance<br>Parameter Max. Units<br>a<br>© R θ JA Maximum Junction-to-Ambient 100 °C/W<br>**----- End of picture text -----**<br>


## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|~~ee~~|||||||
|---|---|---|---|---|---|---|
|~~ee~~|**Parameter**|**Min. **|**Typ. **|**Max.**|**Units**|**Conditions**|
|V(BR)DSS<br>~~ee~~<br>~~a~~|Drain-to-Source Breakdown Voltage<br>~~Oe~~|-30<br>~~Oe~~|–––|–––|V|VGS= 0V, ID= -250μA|
|ΔV(BR)DSS/ΔTJ<br>~~a~~|Breakdown Voltage Temp. Coefficient<br>~~sO~~|–––<br>~~sO~~|0.019|–––|V/°C|Reference to 25°C, ID= -1mA|
|RDS(on)<br>~~ee~~<br>~~ee~~|Static Drain-to-Source On-Resistance<br>~~ee~~<br>~~|~~|–––<br>~~ee~~<br>~~||~~|–––<br>~~ee~~<br>~~|~~|98<br>~~ee~~|mΩ<br>~~ee~~|VGS= -10V, ID= -3.0A<br>~~ee~~|
|||–––<br>~~ee~~<br>~~||~~|–––<br>~~ee~~<br>~~|~~|165<br>~~ee~~||VGS= -4.5V,ID= -2.6A<br>~~ee~~|
|VGS(th)<br>~~ee~~<br>~~es~~|Gate Threshold Voltage<br>~~|~~<br>|-1.0<br>~~||~~<br>|–––<br>~~|~~<br>|-2.5<br>|V<br>|VDS= VGS, ID= -250μA<br>|
|gfs<br>~~ee~~<br>~~es~~|Forward Transconductance<br><br>|3.1<br>~~|~~<br>|–––<br>~~|~~<br>|–––<br>|S<br>|VDS= -10V, ID= -3.0A<br>|
|IDSS<br>~~esPR~~<br>~~less|~~|Drain-to-Source Leakage Current<br>~~PR~~<br>~~|}~~|–––<br>~~PR~~|–––<br>~~PR~~|-1.0<br>~~PR~~|~~PO~~<br>~~fn Pp~~|VDS= -24V, VGS= 0V<br>~~PO~~|
|||–––<br>~~PR~~<br>~~|}fn~~|–––<br>~~PR~~<br>~~fn~~|-5.0<br>~~PR~~<br>~~fn~~||VDS= -24V, VGS= 0V, TJ= 70°C<br>~~PO~~<br>~~Pp~~|
|~~less|~~|Gate-to-Source Forward Leakage<br>~~|}~~|–––<br>~~|}fn~~|–––<br>~~fn~~|-100<br>~~fn~~|~~fn Pp~~|VGS= -20V<br>~~Pp~~|
||Gate-to-Source Reverse Leakage<br>~~|}~~|–––<br>~~|}fn~~|–––<br>~~fn~~|100<br>~~fn~~||VGS= 20V<br>~~Pp~~|
|Qg<br>~~less |~~<br>~~ee~~|Total Gate Charge<br>~~|}~~<br>~~ee~~|–––<br>~~|} fn~~<br>~~ee~~|9.5<br>~~fn~~<br>~~ee~~|14<br>~~fn~~<br>~~ee~~|nC<br>~~fn Pp~~|ID= -3.0A<br>VDS= -24V<br>VGS= -10V<br>~~Pp~~<br>~~@~~<br>@|
|Qgs<br>~~ee~~<br>~~a~~<br>~~es~~|Gate-to-Source Charge<br>~~ee~~<br>~~es~~|–––<br>~~ee~~|2.3<br>~~ee~~|3.5<br>~~ee~~|||
|Qgd<br>~~ee~~<br>~~a~~<br>~~es~~<br>~~es~~|Gate-to-Drain("Miller")Charge<br>~~ee~~<br>~~es~~|–––<br>~~ee~~|1.6<br>~~ee~~|2.4<br>~~ee~~|||
|td(on)<br>~~es~~<br>~~es~~<br>~~es~~|Turn-On DelayTime<br>~~es~~|–––|12|–––||VDD= -15V<br>ID= -1.0A<br>RG= 6.0Ω<br>VGS= -10V<br>~~@~~<br>@|
|tr<br>~~es~~<br>~~es~~<br>~~ee~~|Rise Time<br>~~ee~~|–––<br>~~ee~~|18<br>~~ee~~|–––|||
|td(off)<br>~~es~~<br>~~ee~~<br>~~ee~~|Turn-Off DelayTime<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|88<br>~~ee~~<br>~~ee~~|–––|||
|tf<br>~~ee~~<br>~~ee~~<br>~~ee~~|Fall Time<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|52<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––|||
|Ciss<br>~~ee~~<br>~~ee~~<br>~~es~~|Input Capacitance<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|510<br>~~ee~~<br>~~ee~~|–––|pF|VGS= 0V<br>VDS= -25V<br>ƒ = 1.0MHz|
|Coss<br>~~ee~~<br>~~es~~<br>~~es~~|Output Capacitance<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|71<br>~~ee~~<br>~~ee~~|–––|||
|Crss<br>~~es~~<br>~~es~~|Reverse Transfer Capacitance<br>~~ee~~|–––<br>~~ee~~|43<br>~~ee~~|–––|||



## **Source-Drain Ratings and Characteristics** 

**Parameter Min. Typ. Max. Units Conditions** ~~es~~ IS Continuous Source Current ~~sO Qe~~ MOSFET symbol D 1.3 (Body Diode) showing  the ISM Pulsed Source Current integral reverse G 24 ~~Sa)~~ (Body Diode) p-n junction diode. S VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.3A, VGS = 0V ~~a~~ trr Reverse Recovery Time ~~es~~ ––– 17 ~~ss~~ 26 ns TJ = 25°C, IF = -1.3A ~~+++es~~ Qrr Reverse Recovery Charge ––– 12 18 ~~+~~ nC di/dt = -100A/μs ~~2...~~ @ 

O) Repetitive rating;  pulse width limited by @ Surface mounted on FR-4 board,  t ≤ max. junction temperature. @ Pulse width ≤ 400μs; duty cycle ≤ 2%. 

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 100<br>VGS<br>TOP -15V<br>-10V-7.0V Cet te et<br>-5.5V<br>-4.5V 1 ><br>-4.0V<br> 10 -3.5V<br>BOTTOM -2.7V<br>WAAae il<br> 1<br>SSSAeee<br>ee<br>TA -2.70V<br>0.1 ree<br>|<br>th et<br>20μs PULSE WIDTH<br>ZAa T  = 25J °C<br>0.01<br>0.1  1  10  100<br>-V     , Drain-to-Source Voltage (V)DS<br>D<br>-I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical Output Characteristics 

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 100<br>ee======————eeeee<br>eePt ee ee eee<br>YP} pee<br> 10<br>jr<br>aee> T  = 150  C J ° 4ee<br>fe ‘4 AREf+ —<br> 1<br>a ee | ° a ee ee ee ee<br>T  = 25  CJ<br>eea<br>V      = -15V DS<br>Perr 20μs PULSE WIDTH<br>0.1<br>2.0 3.0 4.0 5.0 6.0 7.0<br>-V     , Gate-to-Source Voltage (V)GS<br>D<br>-I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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 100<br>VGS<br>TOP -15V<br>-10V-7.0V ee<br>-5.5V<br>-4.5V 0<br>-4.0V<br>-3.5V<br>BOTTOM -2.7V<br> 10 Ht eeHH<br>22200"ce<br>OU),V0),<br> 1<br>'GY4y |<br>PO -2.70V<br>Ce<br>|AT<br>20μs PULSE WIDTH<br>0.1 Balin ZL T  = 150J °C<br>0.1  1  10  100<br>-V     , Drain-to-Source Voltage (V)DS<br>D<br>-I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 2.** Typical Output Characteristics 

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2.0<br>ID = 3.0A<br>PELLET<br>1.5 FLEE ELE |<br>LL J | b+<br>1.0<br>Lt er TT<br>pL<br>aanal LLL<br>0.5 LLL<br>LE VGS = -10V<br>0.0<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>T  , Junction TemperatureJ (  C)°<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance Vs. Temperature 

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800 —T VC C CGSissrssoss == = = 0V,C C Cggddss + C+ Cf = 1MHzggdd , C      SHORTEDds 2016 4 ID = -3.0A VV DS DS ==--15V24V<br>au Ee<br>600<br>et Ciss te oooa<br>12<br>a a<br>400<br>| 8 aaa 4ne<br>| See 4a<br>0 a9 .e0em<br>200<br>4<br>C oss<br>Crss TEE<br>ee [eee] o o<br>0 0<br> 1 FL  10  100 0 Yr try 4 8  rr 12 16<br>-V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)G<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 100  100<br>OPERATION IN THIS AREA LIMITED<br>BY RDS(on)<br>10us<br> 10 creer  10 Ce<br>T  J = 150  C°<br>100us<br>PEAR EERE SS ediil semi cama<br>1ms<br> 1  1<br>yA T  = 25  CJ ° Ea A 10ms<br> T T AJ = 25  C= 150  C° °<br>0.1 fpPPApe V      = 0 V GS 0.1 m  Single Pulse eain<br>0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.1  1  10  100<br>-V     ,Source-to-Drain Voltage (V)SD -V     , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>GS<br>-V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D-<br>SD<br>-I     , Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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3.0 PANEL NS hs  ELEL<br>2.0 LE PN EET<br>PTT EN EN<br>NEE<br>EN \<br>1.0<br>EERE EREEE EREEEREEE<br>0.0<br>25 50 75 100 125 150<br>T   , Case TemperatureCC (  C)°°<br>D<br>-I   , Drain Current (A)<br>**----- End of picture text -----**<br>


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-<br>+<br>PTT EN EN 7 “<br>≤ 1<br>≤ 0.1 %<br>NEE Q|<br>EN \ a Duty Factor<br>1.0<br>Fig 10a.   Switching Time Test Circuit<br>td(on) tr td(off) tf<br>VGS<br>EERE EREEE EREEEREEE py es<br>0.0 10% | fs\<br>25 50 75 100 125 150<br>T   , Case TemperatureCC (  C)°°<br>90% Jf\ /\<br>Fig 9.   Maximum Drain Current Vs. VDS \<br>Case Temperature<br>Fig 10b.   Switching Time Waveforms<br> 1000<br>PT tT TTPTTT<br> 100<br>HS<br>Ne D = 0.50 a ccs ees ee ee eel eee<br>a8 == ee ee<br>0.20<br>STO GH 01 Same nbs Ee |<br> 10 0.10<br>0.05<br>P DM<br>0.02<br>Tr<br>0.01 t1<br> 1 cn 009)! SINGLE PULSE t2<br>(THERMAL RESPONSE)<br>Po EE Notes:<br>a ee ee eee 1. Duty factor D = t   / t 1 2<br>0.1 eeee el 2. Peak T J = P DM x  Z thJA + TA<br>0.00001 0.0001 0.001 0.01 0.1  1  10<br>t  , Rectangular Pulse Duration (sec)1<br>D<br>-I   , Drain Current (A)<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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0.14 0.40<br>0.13<br>0.12 0.30<br>0.11 iEPYEEE | | | EEE| | | | ct tf ee | ee<br>VGS = -4.5V<br>0.10 Pr;CAEahiEALtt] | { | { | f 0.20 eyPL H|ee<br>0.09 SE ID = -3.0A<br>VGS = -10V<br>0.08 Piasft ~ENeE EL LL 0.10 eesaeeee<br>Sees eea—<e88 | [ToT]<br>0.07<br>4.0 6.0 8.0 10.0 12.0 14.0 16.0 0.00<br>-VGS, Gate -to -Source Voltage  (V) 0 4 8 12 16<br>-ID , Drain Current (A)<br>)<br>Ω<br>RDS (on) , Drain-to-Source On Resistance (<br>)<br> Ω<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 11.** Typical On-Resistance Vs. Gate Voltage 

**Fig 12.** Typical On-Resistance Vs. Drain Current 

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Current Regulator<br>Same Type as D.U.T.<br>50K Ω<br>QG 12V .2 μ F<br>en f i a .3 μ F<br>LE it -<br>QGS QGD D.U.T. +VDS<br>VGS<br>VG<br>-3mA<br>7 (a y |<br>Ot<br>IG ID<br>Charge Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 13a.** Basic Gate Charge Waveform 

**Fig 13b.** Gate Charge Test Circuit 

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2.5 30 aee a<br>20 aen<br>ID = -250μA<br>2.0<br>AAU<br>10 CNM HINTIAI<br>HTN<br>CLT<br>1.5 0 ee<br>-75 -50 -25 0 25 50 75 100 125 150 0.001 0.010 0.100 1.000 10.000 100.000<br>TJ , Temperature ( °C ) Time (sec)<br>-VGS(th) ,  Variace ( V )<br>Power (W)<br>**----- End of picture text -----**<br>


**Fig 14.** Threshold Voltage Vs. Temperature 

Typical Power Vs. Time 

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O 6 D O 5 |a MBOSYLA LTa| MILLIMETERSMIN0.89  ——— MAX1.12DIMENSIONS.036MININCHESMAX.044 J<br>A1 0.01 0.10 .0004 .0039<br>A2 0.88 1.02 .035 .040<br>[pfj 3 S E1 6 E | ——— bc 0.300.08 0.500.20 —o .0119.0032 .0196.0078<br>1 2 ccc C B A D 2.80 3.04 .111 .119<br>E 2.10 2.64 .083 .103<br>E1 1.20 1.40 .048 .055<br>Hl oo e 0.95 BSC .0375 BSC<br>e B 5 e1 1.90 BSC .075 BSC<br>of e1 Tot o O ——arsyr L1L 0.400.25 BS C0.60 .0158.0118 BSC.0236<br>a 0 0° 8° 0° 8°<br>r aaa 0.10 e .004<br>r bbb 0.20 r .008<br>a ccc 0.15 .006<br>a A A2 Pa OO 4 T H e vy~ . .<br>L1<br>A1 3X b aaa C<br>bbb C A B 3 S URF<br>0<br>O 7 3X L<br>RECOMMENDED FOOTPRINT<br>NOTES<br>3X [.038]0.972 1.  DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994.2.  DIMENSIONS ARE SHOWN IN MILLIMETERS AND INCHES.<br>3.  CONTROLLING DIMENSION: MILLIMETER.<br>= [.1079]2.742 4   DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.5   DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.<br>6   DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H.<br>7   DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.<br>8.  OUTLINE CONFORMS TO JEDEC OUTLINE TO-236AB.<br>[.0375]0.95 3X     0.802     [.031]<br>1.90<br>[.075]<br>**----- End of picture text -----**<br>


Micro3 (SOT-23 / TO-236AB)  Part Marking Information 

Notes: This part marking information applies to devices produced after 02/26/2001 

|DATE CODE||||W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|
|---|---|---|---|---|---|---|---|---|---|---|---|
|PART NUMBER||||LEAD-FREE|YEAR||Y|WORK<br>WEEK||W||
||||||2011|2001|1|01||A||
||||||2012|2002|2|02||B||
||||||2013|2003|3|03||C||
|Cu WIRE<br>HALOGEN FREE||||ASSEMBLY LOT CODE|2015<br>2014<br>2016|2005<br>2004<br>2006|5<br>4<br>6|04||D||
|X = PART NUMBER CODE REFERENCE:|||||2017|2007|7|||||
|B = IRLML2803<br>A = IRLML2402||||T = IRLML6246<br>S = IRLML6244|2018<br>2020<br>2019|2008<br>2010<br>2009|8<br>0<br>9|24||X||
|C = IRLML6302||||U = IRLML6344||||25||Y||
|D = IRLML5103||||V = IRLML6346||||26||Z||
|E = IRLML6402||||W = IRFML8244||||||||
|F = IRLML6401||||X = IRLML2244|W = (27-52) IF PRECEDED BY A LETTER||||W = (27-52) IF PRECEDED BY A LETTER|||
|G = IRLML2502||||Y = IRLML2246||||WORK||||
|H = IRLML5203||||Z = IRFML9244|YEAR||Y|WEEK||W||
|I  = IRLML0030|||||2011|2001|A|27||A||
|J = IRLML2030|||||2012|2002|B|28||B||
|K = IRLML0100|||||2013|2003|C|29||C||
|L = IRLML0060|||||2015<br>2014|2005<br>2004|E<br>D|30||D||
|M = IRLML0040|||||2016|2006|F|||||
|N = IRLML2060||||DATE CODE EXAMPLE:|2017|2007|G|||||
|P = IRLML9301||||YWW = 432 = DF|2018|2008|H|||||
|R = IRLML9303||||YWW = 503 = 5C|2019|2009|J|||||
||||||2020|2010|K|50||X||
|||||||||51||Y||
|||||||||52||Z||



## ™ 

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2.05 ( .080 ) 1.6 ( .062 ) 1.32 ( .051 )<br>1.95 ( .077 ) 4.1 ( .161 ) 1.5 ( .060 ) 1.85 ( .072 ) 1.12 ( .045 )<br>3.9 ( .154 ) 1.65 ( .065 )<br>= = 7) 7<br>60 TR 66 oo 6 64-4 3.55 ( .139 ) | 8.3 ( .326 )<br>3.45 ( .136 ) 7.9 ( .312 )<br>\EIEIERIE IE IE}<br>FEED DIRECTION 4.1 ( .161 )<br>—. + | 3.9 ( .154 ) : 1.1 ( .043 )0.9 ( .036 ) a s 0.35 ( .013 )0.25 ( .010 )<br>  178.00<br>( 7.008 )<br>    MAX.<br>9.90 ( .390 ) ae<br>8.40 ( .331 )<br>**----- End of picture text -----**<br>


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NOTES:<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>**----- End of picture text -----**<br>


2.  OUTLINE CONFORMS TO EIA-481 & EIA-541. 

|**Qualification information**<br>†|||
|---|---|---|
|Qualification level|Consumer<br>(per JEDEC JESD47F<br>††guidelines)||
|Moisture Sensitivity Level|Micro3™(SOT-23)|MS L1<br>(per JEDEC J-STD-020D<br>††)|
|RoHS compliant|(per JEDEC J<br>)<br>Yes||



- Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability ††   Applicable version of JEDEC standard at the time of product release 

## **Revision History** 

|**Date**|**Comment**|
|---|---|
|4/28/2014|•Updated data sheet with new IR corporate template.<br>•Updated package outline & part marking on page 8.<br>•Added Qualification table -Qual level "Consumer" on page 10.<br>•Added bulletpoint in the  Benefits  "RoHS Compliant,Halogen -Free" onpage 1.|



**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRLML5203TRPBF/power-mosfet-p-channel-30-v-3-a-0098-ohm-sot-23)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irlml5203trpbf/mosfet-p-ch-30v-3a-sot23/dp/9103511RL)
---

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