# Power MOSFET, P Channel, 30 V, 3 A, 0.098 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:2726010/)

**URL**: https://novapart.co/products/IRLML5203GTRPBF/power-mosfet-p-channel-30-v-3-a-0098-ohm-sot-23
**SKU**: IRLML5203GTRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2910
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | HEXFET |
| Power Dissipation | 1.25W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | P Channel |
| Power Dissipation Pd | 1.25W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.098ohm |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 3A |
| Drain Source On State Resistance | 0.098ohm |
| Gate Source Threshold Voltage Max | 2.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2726010/)

## PD - 96166 

## IRLML5203GPbF 

## HEXFET ® Power MOSFET 

Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free 

||HEXFET<br>Power MOSFET<br>®|Power MOSFET|
|---|---|---|
|**VDSS**<br>**-30V**|**RDS(on) max (m**|**ID**<br>-3.0A<br>-2.6A|
||**DS(on)**<br>98@VGS= -10V<br>PO||
||165@VGS= -4.5V<br>PO||



## **Description** 

These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.  This benefit provides the designer with an extremely efficient device for use in battery and load management applications. 

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Micro3 [TM]<br>**----- End of picture text -----**<br>


A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3[TM] , is ideal for applications where printed circuit board space is at a premium.  The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available. 

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Parameter Max. Units<br>es<br>GG VDS Drain- Source Voltage -30 V<br>ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -3.0<br>RR<br>ID @ TA= 70°C Continuous Drain Current, VGS @ -10V -2.4 A<br>Gnoe IDM Pulsed Drain Current  -24<br>PD @TA = 25°C Power Dissipation 1.25<br>SSeG PD @TA = 70°C Power Dissipation © Geoe 0.80<br>Linear Derating Factor 10 mW/°C<br>VGS Gate-to-Source Voltage  ± 20 V<br>e TJ, TSTG s Junction and Storage Temperature Range f -55  to + 150 °C<br>Thermal Resistance<br>Parameter Max. Units<br>Rs<br>© RθJA Maximum Junction-to-Ambient 100 °C/W<br>www.irf.com 1<br>07/22/08<br>**----- End of picture text -----**<br>


## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|~~Bs~~|~~rs Gs~~|~~Gs~~|~~re~~||||
|---|---|---|---|---|---|---|
|~~Bs~~|**Parameter**<br>~~rs Gs~~|**Min. **<br>~~Gs~~|**Typ. **<br>~~re~~|**Max.**|**Units**|**Conditions**|
|V(BR)DSS<br>~~Bs~~<br>~~GC~~|Drain-to-Source Breakdown Voltage<br>~~rs Gs~~<br>~~GC~~|-30<br>~~Gs ~~<br>~~GC~~|–––<br> ~~re~~<br>~~GC~~|–––<br>~~GC~~|V<br>~~GC~~|VGS= 0V, ID= -250µA<br>~~GC~~|
|∆V(BR)DSS/∆TJ<br>~~GO~~|Breakdown Voltage Temp. Coefficient<br>~~GO~~|–––<br>~~GO~~|0.019<br>~~GO~~|–––<br>~~GO~~|V/°C<br>~~GO~~|Reference to 25°C, ID= -1mA<br>~~GO~~|
|RDS(on)<br>~~ee~~|Static Drain-to-Source On-Resistance<br>~~ee~~<br>**|**|–––<br>~~ee~~<br>**|**|–––<br>~~ee~~|98<br>~~ee~~|mΩ<br>~~ee~~|VGS= -10V, ID= -3.0A<br>~~ee~~|
|||–––<br>~~ee~~<br>**|**<br>~~fs~~|–––<br>~~ee~~<br>~~fs~~|165<br>~~ee~~<br>~~fs~~||VGS= -4.5V, ID= -2.6A<br>~~ee~~|
|VGS(th)<br>~~ss~~|Gate Threshold Voltage<br>**|**<br>~~ss~~|-1.0<br>**|**<br>~~ss~~<br>~~fs~~|–––<br>~~ss~~<br>~~fs~~|-2.5<br>~~ss~~<br>~~fs~~|V<br>~~ss~~|VDS= VGS, ID= -250µA<br>~~ss~~|
|gfs<br>~~es~~|Forward Transconductance<br>~~es~~|3.1<br>~~fs~~<br>~~es~~|–––<br>~~fs~~<br>~~es~~|–––<br>~~fs~~<br>~~es~~|S<br>~~QC~~|VDS= -10V, ID= -3.0A<br>~~QC~~|
|IDSS<br>~~a[~~|Drain-to-Source Leakage Current<br>~~[~~|–––|–––|-1.0|~~Po~~|VDS= -24V, VGS= 0V<br>~~Po~~|
|||–––|–––|-5.0||VDS= -24V, VGS= 0V, TJ= 70°C<br>~~Po~~|
|~~a [~~<br>~~pf}~~|Gate-to-Source Forward Leakage<br>~~[~~|–––|–––|-100|~~Po~~|VGS= -20V<br>~~Po~~|
||Gate-to-Source Reverse Leakage<br>~~[~~<br>~~pf}~~|–––<br>{|–––<br>}|100||VGS= 20V<br>~~Po~~|
|Qg<br>~~pf}~~<br>Re|Total Gate Charge<br>~~pf}~~|–––<br>{|9.5<br>}|14|nC|ID= -3.0A<br>VDS= -24V<br>VGS= -10V<br>~~®~~<br>®|
|Qgs<br>~~pf}~~<br>Re<br>~~Pe~~|Gate-to-Source Charge<br>~~pf}~~<br>~~ee~~|–––<br>{|2.3<br>}|3.5|||
|Qgd<br>~~pf}~~<br>Re<br>~~Pe~~<br>~~ee~~|Gate-to-Drain("Miller")Charge<br>~~pf}~~<br>~~ee~~<br>~~ee~~|–––<br>{|1.6<br>}|2.4|||
|td(on)<br>~~Pe~~<br>~~ee~~<br>ee|Turn-On Delay Time<br>~~ee~~<br>~~ee~~|–––|12|–––||VDD= -15V<br>ID= -1.0A<br>RG= 6.0Ω<br>VGS= -10V<br>~~®~~<br>®|
|tr<br>~~ee ~~<br>ee<br>ee|Rise Time<br> ~~ee~~|–––|18|–––|||
|td(off)<br>ee<br>ee<br>~~Re~~|Turn-Off Delay Time|–––|88|–––|||
|tf<br>ee<br>~~Re~~<br>~~ee~~|Fall Time|–––|52|–––|||
|Ciss<br>~~Re~~<br>~~ee~~<br>ee|Input Capacitance<br>~~ee~~|–––<br>~~ee~~|510<br>~~ee~~|–––|pF|VGS= 0V<br>VDS= -25V<br>ƒ = 1.0MHz|
|Coss<br>~~ee~~<br>ee<br>ee|Output Capacitance<br>~~ee~~|–––<br>~~ee~~|71<br>~~ee~~|–––|||
|Crss<br>ee<br>ee|Reverse Transfer Capacitance<br>~~ee~~|–––<br>~~ee~~|43<br>~~ee~~|–––|||



## **Source-Drain Ratings and Characteristics** 

|D|**Parameter**<br>D|**Min. **<br>D~~s~~<br>~~Gs~~|**Typ. **<br>~~s~~<br>~~Gs~~|**Max.**<br>~~s~~<br>~~Gs~~|**Units**<br>~~s~~|**Conditions**<br>~~s~~|
|---|---|---|---|---|---|---|
|IS|Continuous Source Current<br>(Body Diode)|~~Gs~~|~~Gs~~|1.3<br>~~Gs~~|~~QO~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunction diode.<br>S<br>D<br>G|
|ISM|Pulsed Source Current<br>(BodyDiode)|||24<br>~~QO~~|||
|VSD<br>~~eG~~|Diode Forward Voltage<br>~~eG~~|–––<br>~~eG~~|–––<br>~~eG~~|-1.2<br>~~eG~~<br>~~QO~~|V<br>~~eG~~<br>~~QO~~|TJ= 25°C, IS= -1.3A, VGS= 0V<br>~~eG~~|
|trr<br>~~ee~~<br>ee|Reverse Recovery Time<br>~~ee~~|–––<br>~~ee~~|17<br>~~ee~~|26<br>~~QO~~<br>~~ee~~|ns<br>~~QO~~<br>~~ee~~|TJ= 25°C, IF= -1.3A<br>di/dt = -100A/µs<br>~~ee~~<br>®|
|Qrr<br>~~ee~~<br>ee|Reverse Recovery Charge<br>~~ee~~|–––<br>~~ee~~|12<br>~~ee~~|18<br>~~ee~~|nC<br>~~ee~~||



® Repetitive rating;  pulse width limited by 6) Surface mounted on FR-4 board,  t ≤ max. junction temperature. 

Pulse width ≤ 400µs; duty cycle ≤ 

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 100<br>VGS<br>TOP -15V<br>-10V<br>-7.0V<br>-5.5V<br>-4.5V Hee<br>-4.0V<br> 10 -3.5V<br>BOTTOM -2.7V Zane<br> 1<br>Z-G20N A |<br>-2.70V<br>0.1<br>ree |<br>7 ee<br>20µs PULSE WIDTH<br>niPEP Tr T  = 25J °C<br>0.01<br>0.1  1  10  100<br>-V     , Drain-to-Source Voltage (V)DS<br>Fig 1.   Typical Output Characteristics<br> 100 ==========aaaeeseee ee ee<br> 10<br>||SS| | | Lert<br>———— eS SS<br>T  = 150  CJ ° Ye}<br>an) {| {[ {| {[ TF<br> 1 i ae| | | | |<br>i— A T  = 25  CJ ° ee ee ee ee<br>V      = -15VDS<br>20µs PULSE WIDTH<br>0.1<br>2.0 aoe 3.0 4.0 eee 5.0 6.0 7.0<br>-V     , Gate-to-Source Voltage (V)GS<br>D<br>-I   ,  Drain-to-Source Current (A)<br>D<br>-I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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 100<br>VGS<br>TOP -15V<br>-10V<br>-7.0V<br>-5.5V<br>-4.5V HEHE FH<br>-4.0V<br>-3.5V<br>BOTTOM -2.7V Hl gem fH<br> 10<br>— eei<br> 1<br>-2.70V<br>ee ee<br>|ARIE<br>20µs PULSE WIDTH<br>0.1 PJ i ll T  = 150J °C<br>0.1  1  10  100<br>-V     , Drain-to-Source Voltage (V)DS<br>Fig 2.   Typical Output Characteristics<br>2.0<br>ID = 3.0A<br>T ET<br>1.5<br>H U<br>TTTTTTTTT TTA<br>LaerT<br>1.0 | Le<br>Lt ~ad<br>Seo:<br>0.5 PLETE<br>VGS = -10V<br>0.0<br>-60 IN -40  EUENEWEWENENINIAAAAE -20 0 20 40 60 80 100 120 140 160<br>T  , Junction TemperatureJ (  C)°<br>D<br>-I   ,  Drain-to-Source Current (A)<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance Vs. Temperature 

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800 VGS = 0V, f = 1MHz 20 ID = -3.0A<br>CCissrss == CCgsgd + Cgd , C      SHORTEDds VVDSDS ==-24V-15V<br>Coss = Cds + Cgd 16<br>Ht} Fo ft | | |<br>600<br>Ciss<br>a II a<br>12<br>400<br>CO = eee<br>tt 8 WV<br>ET<br>200<br>4<br>Coss<br>Crss<br>S P r e[Il oeA<br>0 0<br> 1  10  100 0 4 8 12 16<br>-V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)G<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 100  100<br>OPERATION IN THIS AREA LIMITED<br>BY RDS(on)<br>— P==F EAA ==-+4 Rte sy [LTT]<br>10us<br> 10  10<br>T  = 150  CJ °<br>100us<br>Be SS Se e<br>1ms<br> 1 fa/ AAY mEH  1 ee S T<br> Ay T  = 25  CJ ° oe 2 S 10ms<br> T TAJ = 25  C= 150  C° °<br>0.1 A V      = 0 V GS 0.1 L  Single Pulse Ha R H<br>0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.1  1  10  100<br>-V     ,Source-to-Drain Voltage (V)SD -V     , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>GS<br>-V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D-<br>SD<br>-I     , Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


## **Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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3.0 PAW~N EEE Yea<br>PE IN ~ Vos D.UT. -<br>2.0<br>+<br>PE LPN ELE\ ne V |<br>≤ 1<br>≤ 0.1 %<br> LLEE NEE © | °<br>See\ anitDuty Factor<br>1.0<br>Fig 10a.   Switching Time Test Circuit<br>td(on) tr td(off) tf<br>VGS<br>0.0 FLEE ELE EA 10% ey ee<br>25 50T   , Case TemperatureC 75 100 (  C)125° 150 VI|<br>90% \ |<br>Fig 9.   Maximum Drain Current Vs. VDS ey,<br>Case Temperature<br>Fig 10b.   Switching Time Waveforms<br> 1000<br>PTT<br> 100 eA<br>D = 0.50<br>0.20 SoSer<br> 10 0.10<br>0.05<br>PDM<br>0.02<br>r t<br>0.01 t1<br> 1 = T SINGLE PULSE nct t2<br>(THERMAL RESPONSE)<br>Notes:<br>PP I T 1. Duty factor D = t   / t1 2<br>e e 2. Peak T J = P DM x  Z thJA + TA<br>0.1<br>0.00001 0.0001 0.001 0.01 0.1  1  10<br>t  , Rectangular Pulse Duration (sec)1<br>D<br>-I   , Drain Current (A)<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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0.14 0.40<br>0.13<br>M oa Pe<br>0.12 0.30<br>P REEEEEC} ff<br>0.11 | AL | | | Td | dT dT | |<br>R EPRE} VGS = -4.5V<br>0.20<br>0.10 p i hi tT | tT} dt dt tt Ff<br>0.09 PSA ENE SEp ID = -3.0A ] 9 Fe F ET VGS = -10V<br>0.10<br>0.08<br>a<br>0.07<br>4.0 6.0 8.0 10.0 12.0 14.0 16.0 0.00<br>-VGS, Gate -to -Source Voltage  (V) 0 4 8 12 16<br>-ID , Drain Current (A)<br>)<br>Ω<br>RDS (on) , Drain-to-Source On Resistance (<br>)<br> Ω<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 11.** Typical On-Resistance Vs. Gate Voltage 

**Fig 12.** Typical On-Resistance Vs. Drain Current 

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a QG<br>QGS QGD<br>VG<br>wa<br>Charge<br>**----- End of picture text -----**<br>


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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>re .3µF<br>D.U.T. +-VDS<br>VGS<br>-3mA<br>= |<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 13a.** Basic Gate Charge Waveform 

**Fig 13b.** Gate Charge Test Circuit 

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2.5 30 STINE TTA<br>20 N A MET LIA<br>ID = -250µA<br>2.0<br>A TA<br>10 C NEL Ml<br>C HINE<br>CAIHis<br>1.5 0<br>-75 -50 -25 0 25 50 75 100 125 150 0.001 0.010 0.100 1.000 10.000 100.000<br>TJ , Temperature ( °C ) Time (sec)<br>-VGS(th) ,  Variace ( V )<br>Power (W)<br>**----- End of picture text -----**<br>


**Fig 14.** Threshold Voltage Vs. Temperature 

Typical Power Vs. Time 

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A 6 A A 5 PO DIMENSIONS<br>D MILLIMETERS INCHES<br>— SYMBOL ee ee<br>MIN MAX MIN MAX<br>A 0.89 1.12<br>rh eee<br>TTT 3 E es| A1 0.01 0.10 0.0004<br>a 6 E1 p | 1 i 2 | 0.15 [0.006] M C B A 0 A2b 0.880.30 .0 1.020.50 0.0000.004<br>Ly [|]<br>iT Tt 0.003 c 0.08 0.20 0.0200.008<br>Ag 5 B OH e | 0.110 D 2.80 3.04 | 0.120 |<br>= e1 0.083 E 2.10 2.64 0.104 |<br>A 0.047 E1 1.20 1.40<br>A2 C H Ay 4 L1 0.087 e 0.95 BSC [0.055 |<br>asc<br>c e1 1.90 BSC<br>a e ° L_. a L 0.40 0.60<br>A1 0.10 [0.004] C L2 L1 0.54 REF REF<br>Jo 3X b 3X L | ee <<br>0.20 [0.008] M C B A  7 L2 0.25 BSC BSC<br>exon A ee<br>0 8 0 8<br>**----- End of picture text -----**<br>


## **Recommended Footprint** 

## **NOTES:** 

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0.972<br>0.802 | fH 0.950 2.742 ||<br>1.900<br>**----- End of picture text -----**<br>


   1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994 

   2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 

   3. CONTROLLING DIMENSION: MILLIMETER. 

   4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE. 

   5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H. 

   6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE. 7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE. 8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB. 

   [[°]] 

7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE. 8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB. 

L 1.900[[°]] 

## Micro3 (SOT-23 / TO-236AB)  Part Marking Information 

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Micro3 / SOT-23 Package Marking<br>Y = YEAR<br>W = WEEK<br>PART NUMBER<br>A YW LC<br>HALOGEN FREE | LOT<br> INDICATOR CODE<br>PART NUMBER CODE REFERENCE:<br>A = IRLML2402<br>B =IRLML2803<br>C = IRLML2402<br>D = IRLML5103<br>E = IRLML6402<br>F = IRLML6401<br>G = IRLML2502<br>H = IRLML5203<br>Note: A line above the work week<br>(as shown here) indicates Lead-free<br>**----- End of picture text -----**<br>


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0 24 !<br>2 Y<br>26 "<br>PRECEDED BY<br>Y WEEKWORK<br>A a7 A<br>B 28 B<br>Cc 2g Cc<br>D 30 D<br>E<br>G<br>#<br>$ «F | |<br>50 !<br>§1 Y<br>52 "<br>**----- End of picture text -----**<br>


## **Note: For the most current drawing please refer to IR website at http://www.irf.com/package** 

## www.irf.com 

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## ™ 

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**----- Start of picture text -----**<br>
2.05 ( .080 )1.95 ( .077 ) 4 oF 4.1 ( .161 ) g 1.6 ( .062 )1.5 ( .060 ) 1.85 ( .072 ) 1.32 ( .051 )1.12 ( .045 )<br>3.9 ( .154 ) 1.65 ( .065 )<br>te [ -<br>60 TR eeoev oop. 3.55 ( .139 ) 8.3 ( .326 )<br>3.45 ( .136 )<br>7.9 ( .312 )<br>VEERIE —\<br>FEED DIRECTION 4.1 ( .161 )<br>3.9 ( .154 ) 1.1 ( .043 ) 0.35 ( .013 )<br>0.9 ( .036 ) 0.25 ( .010 )<br>  178.00<br>( 7.008 )<br>    MAX.<br>9.90 ( .390 )<br>IX 8.40 ( .331 ) a} jo<br>NOTES:<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>2.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>**----- End of picture text -----**<br>


**Note: For the most current drawing please refer to IR website at http://www.irf.com/package** 

Data and specifications subject to change without notice. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 07/2008 

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