# Power MOSFET, N Channel, 30 V, 850 mA, 0.25 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:9102701/)

**URL**: https://novapart.co/products/IRLML2803TRPBF/power-mosfet-n-channel-30-v-850-ma-025-ohm-sot-23
**SKU**: IRLML2803TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.0850
**Stock**: 1000+
**Lead Time**: 309 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:850mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissip

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 400mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 850mA |
| Drain Source On State Resistance | 0.25ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:9102701/)

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G 1<br>Voss = 30V<br>3 D<br>S 2 Ω<br>**----- End of picture text -----**<br>


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Micro3 ™<br>**----- End of picture text -----**<br>


|**Base Part  Number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Orderable Part Number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|IRLML2803TRPbF|Micro3™ (SOT-23)|Tape and Reel|3000|IRLML2803TRPbF|



## **Absolute Maximum Ratings** 

|~~———~~|**Parameter**<br>~~———~~<br>~~ee~~|**Max.**|**Units**|
|---|---|---|---|
|ID@ TA= 25°C<br>~~———~~|Continuous Drain Current,VGS@ 10V<br>~~———~~<br>~~ee~~|1.2|A|
|ID @ TA = 70°C<br>~~———~~|Continuous Drain Current,VGS@ 10V<br>~~———~~<br>~~ee~~|0.93||
|IDM<br>~~———~~|Pulsed Drain Current<br>~~———~~<br>~~ee~~|7.3||
|PD @TA = 25°C<br>~~———~~|Power Dissipation<br>~~———~~<br>~~ee~~|540<br>~~G~~|mW|
||Linear DeratingFactor<br>~~a~~|4.3<br>~~a~~<br>~~G~~|mW/°C<br>~~a~~|
|VGS|Gate-to-Source Voltage<br>~~a~~|±20<br>~~a~~<br>~~G~~|V<br>~~a~~|
|EAS|Single Pulse Avalanche Energy<br>~~PO~~|3.9<br>~~PO~~|mJ<br>~~PO~~|
|dv/dt|Peak diode Recoverydv/dt<br>~~PO~~<br>~~=~~|5.0<br>~~PO~~<br>~~=~~|V/ns<br>~~PO~~<br>~~=~~|
|TJ,TSTG|Junction and Storage Temperature Range|-55  to + 150|°C|



|Δ<br>~~Vienoss ~~|Δ<br>|~~| ~~|~~Drain-to-Source ~~<br>~~a~~|~~Breakdown ~~|~~Votlage ~~|~~| ~~<br>~~| ~~|~~Ω~~<br> ~~30 |—-|-—| V_| ~~<br> ~~-——| —-| 0.25 |~~|~~Ves= OV, lo = 250HA~~<br>~~Ves = 10V, Ip = 0.91A~~|
|---|---|---|---|---|---|---|---|---|



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D<br>G<br>S<br>**----- End of picture text -----**<br>


≤ 

≤ 

≤ 

≤ ≤ Surface mounted on FR-4 board, t ≤ 5sec. Limited by TJmax, starting TJ = 25°C, L = 9.4mH, RG = 25 Ω , IAS = 0.9A. 

≤ 

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10<br> TOP           15V Vest<br>                   10V “Coo 4<br>                   7.0V<br>                   5.5V MBS) yr<br>                   4.5V<br>                   4.0V SY, ZaZS ae<br>                   3.5V<br> BOTTOM   3.0V<br>{=<br>fe. -———<br>1 by |<br>»fee" //ae //7 2 Aeaeeeaes oeeee eee<br>V/A7/ a eeee<br>Ufo |  3.0V<br>ess et aasnt<br>0.1  T   = 25°CJ A<br>0.1 tii =e 1 10<br>V      , Drain-to-Source Voltage (V)DS<br>Fig 1. Typical Output Characteristics<br>10<br>es ° a<br>===. T  = 25 J  .-S>- C =<br>Pe T  = 150J ° C<br>A<br>1 YAP i>VA AGGneen ene<br>| fAyl | fT fT yf oy yp tT fp tT<br>AY A OO<br>227eeee ee eee<br>PEEEP<br> V     = 10VDS<br>0.1 PL FE usouse word A<br>3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5<br>V     , Gate-to-Source Voltage (V)GS<br>I    , Drain-to-Source Current (A)D<br>D<br>I   , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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10<br> TOP           15V<br>                   10V Vest<br>                   7.0V<br>                   5.5V Coot eo<br>                   4.5V<br>                   4.0V eeJ eeOeZeeeee<br>                   3.5V<br> BOTTOM   3.0V ye<br>fy<br>1 fr<br>||So ?effYih) 7 dae[PEE<br>fff 77  3.0V Pern<br>|(“HUf?$ oa<br>VY J el<br>Wo | |<br> T   = 150°CJ<br>0.1<br>0.1 71 TTI == 1 10<br>V     , Drain-to-Source Voltage (V)DS<br>Fig 2. Typical Output Characteristics<br>2.0 PPE EE<br>1.5 REEAGRRAERGEERGRRADS<br><l<br>re [a]<br>1.0 CE PL ery naleetEL<br>LAT |<br>0.5 PEEL<br>ELE EE EL<br>0.0 PLE<br>PPE Ed fy bow<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>T   , Junction Temperature (°C)J<br>D<br>I   , Drain-to-Source Current (A)<br>(Normalized)<br>DS(on)<br>R           ,  Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


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160<br>V      = 0VGS ,         f = 1MHz<br>7 C      = C     + C     ,   C     SHORTEDiss         gs         gd         ds<br>140 C      = Crss         gd<br>C      = C     + Coss        ds         gd<br>120 a<br>= s<br>0<br>100<br>See ss<br>80<br>SS<br>60 PO NN ae<br>40 Se Cc ss<br>8 SSS<br>20<br>et<br>0 es<br>1 10 100<br>V     , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


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20<br>I    = 0.91AD<br>lw be<br>16<br>Soe<br>y “a<br>12<br>|<br>| | 4<br>8<br>HA pot tm |<br>EVA<br>4<br>fan /4neeee<br>auennneer     SEE FIGURE 9<br>0 yt jtTiamere<br>0.0 1.0 2.0 3.0 4.0 5.0<br>Q   , Total Gate Charge (nC)G<br>GS<br>V     , Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


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10 100<br> OPERATION IN THIS AREA LIMITED<br>                       BY RDS(on)<br>Pyre ee|ee ee| = [htt]<br>T  = 150°CJ<br>10<br>anew .een ae<br>10μs<br>1<br>T  = 25°CJ<br>pe A SSS 100μs<br>eS csA 1 celi Salileal<br>a nn 1ms<br>10ms<br>0.1 Lov A 0.1  Single Pulse lll<br>0.4 0.6 0.8 1.0 1.2 1.4 1 10 100<br>V     , Source-to-Drain Voltage (V)SD V     , Drain-to-Source Voltage (V)DS<br>I   , Drain Current (A)D<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


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c e QG<br>QGS QGD<br>es<br>VG<br>Charge<br>**----- End of picture text -----**<br>


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+<br>-<br>≤ 1  ys<br>≤ 0.1 %<br>**----- End of picture text -----**<br>


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Current Regulator<br>Same Type as D.U.T.<br>|<br>| | VDS<br>! 50K Ω | 90%<br>12V .2 μ F<br>.3 μ F<br>LEU + |<br>tL D.U.T. -VDS |<br>10%<br>VGS VGS LA<br>3mA 7 t \« d(on) >< tr >| t a d(off) e tf<br>5<br>IG ID<br>Current Sampling Resistors<br>Fig 9b. Gate Charge Test Circuit Fig 10b. Switching Time Waveforms<br> 1000<br>PTTT<br>a ee<br>D = 0.50<br> 100 eeSee —— rn || |<br>0.20<br>0.10 ——Tr STC<br>Sn a eemn nt See oc |<br>0.05<br> 10<br>ee 0.02  Sr cementLL SF<br>0.01 PDM<br>Se SINGLE PULSE t1<br> 1 Peer (THERMAL RESPONSE I ) EFT t2<br>Notes:<br>rnee 1. Duty factor D = t   / t 1 2<br>a 2. Peak T J = P DM x  Z thJA + TA<br>0.1<br>0.00001 0.0001 0.001 0.01 0.1  1  10  100<br>t  , Rectangular Pulse Duration (sec)1<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>w y IAS<br>to 2V0VGS e<br>tp 0.01 Ω<br>°<br>**----- End of picture text -----**<br>


## **Fig 12a.** Unclamped Inductive Test Circuit 

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V(BR)DSS<br>tp<br>—<br>/<br>IAS<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

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18<br>                 I D<br>16<br>TOP   0.57A<br>0.75A<br>14<br>BOTTOM 0.90A<br>12<br>10 SE<br>A ee ee ee<br>8<br>ee ee<br>6 MN KTtT<br>4<br>2<br>SKA [NT]<br>0<br>Po<br>25 50 75 100 125 150<br>Starting TJ, Junction Temperature (°C)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


## **Fig 12c.** Maximum Avalanche Energy vs. Drain Current 

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Driver Gate Drive<br>P.W.<br>D.U.T + { $ P.W. $ Period —_— D = — Period<br>) [©)] Circuit    • Layout Considerations | V | t GS=10V<br>•<br>| —] - •  LowGroundowLeakageStrayPlane InductanceInductance ® D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oi - lL Current Transformer - ® + Current r Current di/dt NN<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘<br>00 > VDD<br>•  Re-Applied<br>Ro •  riversame type as D.U.T. + Voltage Body Diode  Forward Drop +<br>(faa •  vidtcontrolled by Rg Vp p - Inductor Curent<br>•  D.U.T. - Device Under Test e r ee<br>Ripple  ≤ 5% ISD<br>Q” sp controlled by DutyFactor"D" ®<br>**----- End of picture text -----**<br>


**Fig 13.** 

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HEXFET<br>**----- End of picture text -----**<br>


## ower MOSFETs 

## or N-Channel 

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O 6 D 5 | MBOSYLA | MILLIMETERSMIN0.89  — MAX1.12DIMENSIONS.036MININCHESMAX.044<br>A1 0.01 0.10 .0004 .0039<br>a ———a A2 0.88 1.02 .035 .040<br>a 3 Hl ae) E1 6 E ——a bc 0.300.08 0.500.20 .0119.0032 .0196.0078<br>1 2 ccc C B A D 2.80 3.04 .111 .119<br>E 2.10 2.64 .083 .103<br>i === E1e 1.200.95 BSC1.40 .048.0375 BSC.055<br>e Tt B 5 ——< e1 1.90 BSC .075 BSC<br>e1 a L1L 0.400.25 BS C0.60 .0158.0118 BSC.0236<br>——— 0 0° 8° 0° 8°<br>aaa 0.10 .004<br>bbb 0.20 .008<br>a ccc 0.15 .006<br>4 H<br>ro A A2 ma<br>L1<br>A1 tt 3X b aaa C =) OT Af rN\ p o<br>bbb C A B 3 S URF<br>0<br>O 7 3X L<br>RECOMMENDED FOOTPRINT<br>NOTES<br>3X [.038]0.972 1.  DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994.2.  DIMENSIONS ARE SHOWN IN MILLIMETERS AND INCHES.<br>“f a 4 3.  CONTROLLING DIMENSION: MILLIMETER.<br>[.1079]2.742 4   DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.5   DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.<br>6   DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H.<br>7   DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.<br>8.  OUTLINE CONFORMS TO JEDEC OUTLINE TO-236AB.<br>[.0375]0.95 3X     0.802     [.031]<br>1.90<br>[.075] ca L<br>**----- End of picture text -----**<br>


Micro3 (SOT-23 / TO-236AB)  Part Marking Information 

Notes: This part marking information applies to devices produced after 02/26/2001 

|DATE CODE||||W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|
|---|---|---|---|---|---|---|---|---|---|---|---|
|PART NUMBER||||LEAD-FREE|YEAR||Y|WORK<br>WEEK||W||
||||||2011|2001|1|01||A||
||||||2012|2002|2|02||B||
||||||2013|2003|3|03||C||
|Cu WIRE<br>HALOGEN FREE||||ASSEMBLY LOT CODE|2015<br>2014<br>2016|2005<br>2004<br>2006|5<br>4<br>6|04||D||
|X = PART NUMBER CODE REFERENCE:|||||2017|2007|7|||||
|B = IRLML2803<br>A = IRLML2402||||T = IRLML6246<br>S = IRLML6244|2018<br>2020<br>2019|2008<br>2010<br>2009|8<br>0<br>9|24||X||
|C = IRLML6302||||U = IRLML6344||||25||Y||
|D = IRLML5103||||V = IRLML6346||||26||Z||
|E = IRLML6402||||W = IRFML8244||||||||
|F = IRLML6401||||X = IRLML2244|W = (27-52) IF PRECEDED BY A LETTER||||W = (27-52) IF PRECEDED BY A LETTER|||
|G = IRLML2502||||Y = IRLML2246||||WORK||||
|H = IRLML5203||||Z = IRFML9244|YEAR||Y|WEEK||W||
|I  = IRLML0030|||||2011|2001|A|27||A||
|J = IRLML2030|||||2012|2002|B|28||B||
|K = IRLML0100|||||2013|2003|C|29||C||
|L = IRLML0060|||||2015<br>2014|2005<br>2004|E<br>D|30||D||
|M = IRLML0040|||||2016|2006|F|||||
|N = IRLML2060||||DATE CODE EXAMPLE:|2017|2007|G|||||
|P = IRLML9301||||YWW = 432 = DF|2018|2008|H|||||
|R = IRLML9303||||YWW = 503 = 5C|2019|2009|J|||||
||||||2020|2010|K|50||X||
|||||||||51||Y||
|||||||||52||Z||



**Note: For the most current drawing please refer to IR website at http://www.irf.com/package** 

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2.05 ( .080 ) 1.6 ( .062 )<br>1.32 ( .051 )<br>1.95 ( .077 ) 1.5 ( .060 )<br>4.1 ( .161 ) 1.85 ( .072 ) 1.12 ( .045 )<br>3.9 ( .154 ) 1.65 ( .065 )<br>= = 0) :<br>ie TR 66eo08 6 644 3.55 ( .139 ) | 8.3 ( .326 )<br>3.45 ( .136 )<br>7.9 ( .312 )<br>EIRENE<br>FEED DIRECTION 4.1 ( .161 )<br>3.9 ( .154 ) 1.1 ( .043 ) 0.35 ( .013 )<br>0.9 ( .036 ) 0.25 ( .010 )<br>  178.00<br>( 7.008 )<br>    MAX.<br>9.90 ( .390 ) =}<br>8.40 ( .331 )<br>**----- End of picture text -----**<br>


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NOTES:<br>**----- End of picture text -----**<br>


1.  CONTROLLING DIMENSION : MILLIMETER. 

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2.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>**----- End of picture text -----**<br>


**Note: For the most current drawing please refer to IR website at http://www.irf.com/package** 

|**Qualification information**<br>†|||
|---|---|---|
|Qualification level|Consumer<br>(per JEDEC JESD47F<br>††guidelines)||
|Moisture Sensitivity Level|Micro3™(SOT-23)|MS L1<br>(per JEDEC J-STD-020D<br>††)|
|RoHS compliant|(per JEDEC J<br>)<br>Yes||



- Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability ††   Applicable version of JEDEC standard at the time of product release 

|**Date**|**Comment**|
|---|---|
|4/24/2014|•Updated data sheet with new IR corporate template.<br>•Updated package outline & part marking on page 7.<br>•Added Qualification table -Qual level "Consumer" on page 9.<br>•Added bulletpoint in the  Benefits  "RoHS Compliant,Halogen -Free" onpage 1.|



**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 



## Links

- [View this product on Novapart](https://novapart.co/products/IRLML2803TRPBF/power-mosfet-n-channel-30-v-850-ma-025-ohm-sot-23)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irlml2803trpbf/mosfet-n-logic-sot-23/dp/9102701)
---

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