# Power MOSFET, N Channel, 30 V, 1.2 A, 0.25 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:2726008RL/)

**URL**: https://novapart.co/products/IRLML2803GTRPBF/power-mosfet-n-channel-30-v-12-a-025-ohm-sot-23
**SKU**: IRLML2803GTRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.0870
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Channel Type | N Channel |
| Power Dissipation | 540mW |
| Drain Source On State Resistance | 0.25ohm |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2726008RL/)

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G 1 Voss = 30V<br>3 D<br>S 2 Ω<br>**----- End of picture text -----**<br>


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## **Absolute Maximum Ratings** 

||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|ID@ TA= 25°C|Continuous Drain Current,VGS@ 10V<br>~~PC~~|1.2<br>~~PC~~|A<br>~~a~~<br>~~©~~|
|ID @ TA = 70°C<br>~~©~~|Continuous Drain Current,VGS@ 10V<br>~~a~~<br>~~©~~|0.93<br>~~a~~<br>~~©~~||
|IDM<br>~~©~~|Pulsed Drain Current<br>~~©~~|7.3<br>~~©~~||
|PD @TA = 25°C<br>~~©~~|Power Dissipation<br>~~©~~|540<br>~~©~~<br>~~O~~|mW<br>~~©~~|
||Linear DeratingFactor<br>~~a~~|4.3<br>~~a~~<br>~~O~~|mW/°C<br>~~a~~|
|VGS|Gate-to-Source Voltage<br>~~a~~<br>~~a~~|±20<br>~~a~~<br>~~O~~<br>~~a~~|V<br>~~a~~<br>~~a~~|
|EAS|Single Pulse Avalanche Energy<br>~~a~~<br>~~PO~~|3.9<br>~~a~~<br>~~PO~~|mJ<br>~~a~~<br>~~PO~~|
|dv/dt|Peak diode Recoverydv/dt<br>~~PO~~<br>~~=~~|5.0<br>~~PO~~<br>~~=~~|V/ns<br>~~PO~~<br>~~=~~|
|TJ,TSTG|Junction and Storage Temperature Range<br>~~a~~|-55  to + 150<br>~~a~~|°C<br>~~a~~|



## **Thermal Resistance** 

|||**Parameter**<br>~~©De~~|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RθJA<br>||MaximumJunction-to-Ambient<br>~~©De~~|–––|230|°C/W|



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|~~Vier)Dss~~|||~~Drain-to-SourceBreakdownVoltage~~<br>~~|30|—-|-——|V|~~|~~Voes=OV,~~|
|---|---|---|---|---|
|Δ<br>~~Vier)Dss~~<br>~~Viaross~~|Δ|~~Ty| ~~|~~Drain-to-Source Breakdown Voltage~~<br>~~| 30 | —-| -——| V | ~~<br> ~~Breakdown Voltage Temp. Coefficient | -—~~<br>~~0.029]~~<br>~~-— |~~w/°C~~| ~~|~~Voes= OV, ~~<br> ~~Reference ~~|
|~~DS(on)~~<br>~~Vestth)~~<br>Dis<br>~~|~~<br>~~_~~<br>~~less~~<br>~~Qg~~<br>~~Qgs~~<br>~~Qua~~<br>~~ta(on)~~<br>ts<br>~~ta(off~~<br>~~ty~~|||~~Ω~~<br>~~atic~~<br>~~Urain-to-source~~<br>~~On-hesistance~~<br>~~| — | —-| 0.40 |~~<br>~~Gate Threshold Voltage~~<br>~~|~~1.0|—-|-—]|<br>~~V | ~~<br>~~Forward Transconductance~~<br>~~| 0.87] —-| -—— | S | ~~<br>~~.~~<br>~~1.0~~<br>~~Drain-to-Source Leakage Current~~<br>~~| | —| 1.0 |~~<br>9<br>~~Pas| MA~~<br>~~Gate-to-Source Forward Leakage~~<br>~~| —- | —-| -100 | nA~~<br>~~Gate-to-Source Reverse Leakage~~<br>~~| -—| —-| 100 |~~<br>~~Total Gate Charge~~<br>~~| -——| 3.3] 5.0 |~~<br>~~Gate-to-Source Charge~~<br>~~| -—— | 0.48] 0.72] nC | ~~<br>~~Gate-to-Drain ("Miller") Charge~~<br>~~|} —-| 1.1 [ 1.7 |~~<br>~~Turn-On Delay Time~~<br>~~| -—| 39] —|~~<br>~~fRiseTime—SSSC*d~~<br>~~| 40~~~~**]** —] | ~~<br>~~Turn-Off Delay Time~~<br>~~| -—| 9.0~~<br>~~-——|~~<br>~~FallTime~~<br>~~|-——-|1.7]-—|~~|Ω<br>Ω,<br>~~Ves = 45V,~~<br> ~~Vos=~~Ves, <br> ~~Vos =10V,~~<br>~~Vos~~<br>~~= 24V,~~<br>~~DS~~<br>~~1~~<br>~~[Vos = 24V,~~<br>~~Vos = -20V~~<br>~~Vas = 20V~~<br>~~Ip = 0.91A~~<br> ~~Vos = 24V~~<br>~~Ves = 10V,~~<br>~~Vop = 15V~~<br> ~~n= 001~~<br>~~Re = 6.2~~<br>~~Rp=16~~|



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Repetitive rating; pulse width limited by @ Pulse width ≤ 300us; duty cycle ≤ 2%. max. junction temperature. ( See fig. 11 ) ® Surface mounted on FR-4 board, t ≤ 5sec. ISD ≤ 0.91A, di/dt ≤ 120A/Us, Vpp ≤ V@erypss, © Limited by TJmax, starting TJ = 25°C, L = 9.4mH, RG = 25 Ω , IAS = 0.9A. ≤ 

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10<br> TOP           15V<br>                   10V<br>                   7.0V<br>                   5.5V MBS) ZS ae<br>                   4.5V<br>                   4.0V fy<br>                   3.5V<br> BOTTOM   3.0V<br>{I~<br>1 a Za V yg inl<br>»fee" //ae //7 2 Aeaeeeaes oeeee eee<br>7/ a e<br>V/A eee<br>7s  3.0V |<br>ess et aasnt<br>0.1  T   = 25°CJ A<br>0.1 Ti 1 10<br>V      , Drain-to-Source Voltage (V)DS<br>Fig 1. Typical Output Characteristics<br>10<br>es ° a<br>===. T  = 25 J  .-S>- C =<br>Pe T  = 150J ° C<br>A<br>YAP<br>1 > VA AGRnn enone<br>a<br>|A) fAylA |AfTafT yf oy ypeetT fp tT<br>227eeee ee eee<br>PEEEP<br> V     = 10VDS<br>0.1 PL LL sueruse mons A<br>3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5<br>V     , Gate-to-Source Voltage (V)GS<br>I    , Drain-to-Source Current (A)D<br>D<br>I   , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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10<br> TOP           15V<br>                   10V<br>                   7.0V<br>                   5.5V ee ee Zeeeee<br>                   4.5V<br>                   4.0V J Oe<br>                   3.5V<br> BOTTOM   3.0V Yn ——<br>1 frfy<br>||So ?effYih) 7 dae[PEE<br> 3.0V<br>| fff ~_—_ —<br>| fff) _ 2. LETT<br>VY J el<br>Wo | |<br> T   = 150°CJ<br>0.1<br>0.1 Z| THI tt 1 10<br>V     , Drain-to-Source Voltage (V)DS<br>Fig 2. Typical Output Characteristics<br>2.0 PPE EE<br>1.5 REEAGRRAERGEERGRRADS<br><l<br>re “atl<br>1.0 CE RERAERRED naleet<br>2a 00 GR GEGROn<br>Lt || al<br>0.5 PEEL<br>ELE EE EL<br>0.0 PLE<br>PPE ft eto<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>T   , Junction Temperature (°C)J<br>D<br>I   , Drain-to-Source Current (A)<br>(Normalized)<br>DS(on)<br>R           ,  Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


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160 20<br>V      = 0VGS ,         f = 1MHz I    = 0.91AD<br>C      = C     + C     ,   C     SHORTEDiss         gs         gd         ds<br>140 C      = Crss         gd<br>I] C      = C     + Coss        ds         gd 16 lFze<br>120<br>= s SoS<br>P| rr y Yy<br>100 DNS 12 aaa<br>a ss 7<br>80<br>SS ae HA<br>8<br>60 Pe NNT pot tm |<br>40 SSS ss fan Aeon<br>4<br>8 SSS |p | A |<br>20<br>ee audunnnen     SEE FIGURE 9<br>0 Pte A 0 Yor<br>1 10 100 0.0 1.0 2.0 3.0 4.0 5.0<br>V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)G<br>Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>10 100<br> OPERATION IN THIS AREA LIMITED<br>                       BY RDS(on)<br>ee ee ee eee eee FS a<br>a ee ee ee<br>T  = 150°CJ<br>10<br>anew 27een 20 lll<br>10μs<br>1<br>T  = 25°CJ<br>100μs<br>Ff 1 NTR<br>ee ee ee ee ee ee eee esc een OS 1ms<br>10ms<br>0.1 PAH | tw = OVI A 0.1 caniill  Single Pulse -  al<br>0.4 0.6 0.8 1.0 1.2 1.4 1 10 100<br>V     , Source-to-Drain Voltage (V)SD V     , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A)D<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


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QG ms<br>c e Vv Ro<br>10V" QGS QGD Ves D.U.T.<br>+<br>St Ro L - Vop<br>VG<br>)* 40V<br>Pulse Width ≤ 1  ys<br>Charge > Duty Factor ≤ 0.1 %<br>Fig 9a. Basic Gate Charge Waveform Fig 10a. Switching Time Test Circuit<br>Current Regulator<br>Same Type as D.U.T.<br>VDS<br>| |<br>50K Ω 90%<br>| 12V .2 μ F .3 μ F || \ f |<br>Soe EF D.U.T. +-VDS |<br>10%<br>VGS VGS l s i /<br>3mA 7 t \« d(on) >< tr >! td(off) ol tf<br>on /\<br>IG ID<br>Current Sampling Resistors<br>Fig 9b. Gate Charge Test Circuit Fig 10b. Switching Time Waveforms<br> 1000<br>PTTT<br>a ee<br>D = 0.50<br> 100 eeSee —— rn || |<br>0.20<br>Sn 0.10 ——Tr aSTCeemn nL t Le S eeF oc |<br>0.05<br> 10<br>0.02<br>0.01 PDM<br>oer a toe ee<br>Se SINGLE PULSE t1<br> 1 Oc (THERMAL RESPONSE) | | t2<br>Notes:<br>rnee 1. Duty factor D = t   / t 1 2<br>a 2. Peak T J = P DM x  Z thJA + TA<br>0.1<br>0.00001 0.0001 0.001 0.01 0.1  1  10  100<br>t  , Rectangular Pulse Duration (sec)1<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


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15V 18<br>                 I D<br>16<br>TOP   0.57A<br>VDS L DRIVER 14 0.75A<br>BOTTOM 0.90A<br>12<br>RG D.U.T +<br>- [V][DD]<br>w y IAS A 10 SE<br>to 2V0VGS e A ee ee ee<br>tp 0.01 Ω 8<br>° ee ee<br> Unclamped Inductive Test Circuit 6 MN KTtT<br>V(BR)DSS(BR)DSS 4<br>tp<br>2<br>— SKA [NT]<br>0<br>/ Po<br>25 50 75 100 125 150<br>Starting TJ, Junction Temperature (°C)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


## **Fig 12a.** Unclamped Inductive Test Circuit 

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V(BR)DSS(BR)DSS<br>tp<br>—<br>/<br>IAS<br>**----- End of picture text -----**<br>


## **Fig 12c.** Maximum Avalanche Energy vs. Drain Current 

## **Fig 12b.** Unclamped Inductive Waveforms 

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Driver Gate Drive<br>P.W.<br>D.U.T + { $ P.W. $ Period —_— D = — Period<br>) [©)] Circuit    • Layout Considerations | V | t GS=10V<br>•<br>| —] - •  LowGroundowLeakageStrayPlane InductanceInductance ® D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oi - lL Current Transformer - ® + Current r Current di/dt NN<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘<br>00 > VDD<br>•  Re-Applied<br>Ro •  riversame type as D.U.T. + Voltage Body Diode  Forward Drop ma<br>(faa •  vidtcontrolled by Rg Vp p - Inductor Curent<br>•  D.U.T. - Device Under Test e r ee<br>Ripple  ≤ 5% ISD<br>Q” sp controlled by DutyFactor"D" ®<br>**----- End of picture text -----**<br>


**Fig 13.** 

HEXFET 

## ower MOSFETs 

## or N-Channel 

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A 6 A A 5 PO DIMENSIONS<br>D MILLIMETERS INCHES<br>SYMBOL<br>MIN MAX MIN MAX<br>— eeee ee ee eee<br>A 0.89 1.12<br>TH 3 E SS A1 0.01 0.10 0.0004<br>6 E1 A2 0.88 1.02<br>1 2 0.15 [0.006] M C B A b 0.30 0.50<br>“ | i | fs foo |<br>T H i y c 0.08 0.20<br>Ag 5 B + e / Wot | 003of D 2.80 3.04  tt0 0.1200.008<br>++ e1 0.083 E 2.10 2.64 | 0.104<br>A | E1 1.20 1.40<br>A2 C H 4 4 oF L1 0.037 e 0.95 BSC 0.047 | BSC0.055<br>c e1 1.90 BSC<br>L 0.40 0.60<br>A1 ~ eo 3X 0.20 [0.008]b 0.10 [0.004]M C BCA 3X L A  7 L2 ot L2L1 0.250.54 BSCREF BSCREF<br>| @ | 0 ft 8 Jf 0 ff 8<br>Recommended Footprint NOTES:<br>1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994<br>0.972 2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>3. CONTROLLING DIMENSION: MILLIMETER.<br>0.802 ys t y 0.950 | 2.742 A 5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H. 4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.<br>6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES<br>  NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS<br>fA ° 7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.  OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.<br>8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.<br>— 1.900 A<br>**----- End of picture text -----**<br>


## Micro3 (SOT-23 / TO-236AB)  Part Marking Information 

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Micro3 / SOT-23 Package Marking W =  (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR<br>WORK<br>YEAR Y WEEK W<br>Y = YEAR 2001 1 01 A<br>W = WEEK 2002 2 02 B<br>PART NUMBER 2003 3 03 C<br>2004 4 04 D<br>A YW LC 2005 5<br>2006 6<br>2007 7<br>HALOGEN FREE LOT  2008 8<br> INDICATOR CODE 2009 9<br>2010 0 24 X<br>25 Y<br>26 Z<br>PART NUMBER CODE REFERENCE:<br>W =  (27-52) IF PRECEDED BY A LETTER<br>A = IRLML2402 WORK<br>B =IRLML2803 YEAR Y WEEK W<br>C = IRLML2402 2001 A 27 A<br>D = IRLML5103 20022003 BC 2829 BC<br>E = IRLML6402 2004 D 30 D<br>F = IRLML6401 2005 E<br>G = IRLML2502 2006 F<br>H = IRLML5203 2007 G<br>2008 H<br>2009 J<br>Note: A line above the work week 2010 K 50 X<br>(as shown here) indicates Lead-free   51 Y<br>52 Z<br>**----- End of picture text -----**<br>


**Note: For the most current drawing please refer to IR website at http://www.irf.com/package** 

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## ™ 

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2.05 ( .080 )1.95 ( .077 ) 4 5 4.1 ( .161 ) d 1.6 ( .062 )1.5 ( .060 ) 1.85 ( .072 ) 1.32 ( .051 )1.12 ( .045 )<br>3.9 ( .154 ) 1.65 ( .065 )<br>t e [ -<br>60 TR eeoev eog— 3.55 ( .139 ) t 8.3 ( .326 )<br>3.45 ( .136 )<br>7.9 ( .312 )<br>VEE TIRE Ieif—\_<br>FEED DIRECTION 4.1 ( .161 )<br>3.9 ( .154 ) 1.1 ( .043 ) 0.35 ( .013 )<br>0.9 ( .036 ) 0.25 ( .010 )<br>  178.00<br>( 7.008 )<br>    MAX.<br>9.90 ( .390 )<br>IX 8.40 ( .331 ) =<br>**----- End of picture text -----**<br>


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NOTES:<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>**----- End of picture text -----**<br>


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2.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>**----- End of picture text -----**<br>


**Note: For the most current drawing please refer to IR website at http://www.irf.com/package** 

Data and specifications subject to change without notice. 

**IR WORLD HEADQUARTERS:** 101N.Sepulveda Blvd, El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 12/2011 

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