# Power MOSFET, N Channel, 20 V, 4.2 A, 0.035 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:2726007/)

**URL**: https://novapart.co/products/IRLML2502GTRPBF/power-mosfet-n-channel-20-v-42-a-0035-ohm-sot-23
**SKU**: IRLML2502GTRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2580
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Power Dissipation | 1.25W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 1.25W |
| Rds(On) Test Voltage | 4.5V |
| On Resistance Rds(On) | 0.035ohm |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 4.2A |
| Drain Source On State Resistance | 0.035ohm |
| Gate Source Threshold Voltage Max | 1.2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2726007/)

HEXFET Power MOSFET 

Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in Tape and Reel Fast Switching Lead-Free Halogen-Free 

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**----- Start of picture text -----**<br>
G 1<br>VDSS = 20V<br>3 D<br>R  = 0.045 Ω<br>DS(on)<br>S 2<br>Micro3 ™<br>**----- End of picture text -----**<br>


These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET[®] power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management. 

A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint.  This package, dubbed the Micro3 ™ , is ideal for applications where printed circuit board space is at a premium.  The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available. 

|~~a~~|**Parameter**<br>~~a~~|**Max.**<br>~~a~~|**Units**<br>~~a~~|
|---|---|---|---|
|VDS<br>~~a~~<br>~~a~~<br>~~oo~~|Drain- Source Voltage<br>~~a~~<br>~~a~~<br>~~oo~~|20<br>~~a~~<br>~~a~~<br>~~oo~~|V<br>~~a~~<br>~~a~~|
|ID@ TA= 25°C<br>~~oo~~|Continuous Drain Current, VGS@ 4.5V<br>~~oo~~|4.2<br>~~oo~~|A|
|ID@ TA= 70°C<br>~~oo~~|Continuous Drain Current, VGS@ 4.5V<br>~~oo~~|3.4<br>~~oo~~||
|IDM<br>~~oo~~<br>~~a~~|Pulsed Drain Current<br>~~oo~~<br>~~a~~|33<br>~~oo~~<br>~~a~~||
|PD@TA= 25°C<br>~~oo~~<br>~~SC~~|Power Dissipation<br>~~oo~~<br>~~SC~~|1.25<br>~~oo~~<br>~~SC~~|~~SC~~|
|PD@TA= 70°C<br>~~SC~~<br>~~—~~|Power Dissipation<br>~~SC~~<br>~~oh~~|0.8<br>~~SC~~<br>~~oh~~||
|~~ee~~|Linear DeratingFactor<br>~~ee~~|0.01<br>~~ee~~|W/°C<br>~~ee~~|
|VGS<br>~~ee~~|Gate-to-Source Voltage<br>~~ee~~|± 12<br>~~ee~~|V<br>~~ee~~|
|TJ,TSTG<br>~~a~~|Junction and Storage Temperature Range|-55  to + 150|°C|



## **Thermal Resistance** 

||**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RθJA|Maximum Junction-to-Ambient|75|100||



09/25/12 

## **Electrical Characteristics  @ TJ = 25°C (unless otherwise specified)** 

|~~Re~~<br>~~es~~|**Parameter**<br>~~Se~~<br>~~GGG~~|**Min.**<br>~~GGG~~<br>~~GGG~~|**Typ.**<br>~~GGG~~<br>~~GGG~~|**Max.**<br>~~GGG~~<br>~~GGG~~|**Units**<br>~~GGG~~<br>~~GO~~|**Conditions**<br>~~GO~~|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~Re~~<br>~~es~~<br>~~Re~~|Drain-to-Source Breakdown Voltage<br>~~Se~~<br>~~GGG~~<br>~~Qe~~|20<br>~~GGG~~<br>~~GGG~~|**Typ.**<br>–––<br>~~GGG~~<br>~~GGG~~<br>~~GG~~|–––<br>~~GGG~~<br>~~GGG~~<br>~~GG~~|V<br>~~GGG~~<br>~~GO~~<br>~~GG~~|VGS= 0V,ID= 250uA<br>~~GO~~|
|(BR)DSS<br>ΔV(BR)DSS/ΔTJ<br>~~es~~<br>~~Re~~|Breakdown Voltage Temp. Coefficient<br>~~GGG~~<br>~~Qe~~<br>~~|~~|–––<br>~~GGG~~<br>~~|~~|0.01<br>~~GGG~~<br>~~GG~~<br>|–––<br>~~GGG ~~<br>~~GG~~<br>|V/°C<br> ~~GO~~<br>~~GG~~<br>|Reference to 25°C,ID= 1.0mA<br>~~GO~~<br>~~eeee~~<br>|
|(BR)DSS<br>RDS(on)<br>~~Re~~<br>~~ee~~|Static Drain-to-Source On-Resistance<br>~~Qe~~<br>~~ee~~<br>~~|~~|–––<br>~~ee~~<br>~~|~~|0.035<br>~~GG~~<br>~~ee~~<br>|0.045<br>~~GG~~<br>~~ee~~<br>|Ω<br>~~GG~~<br>~~ee~~<br>|VGS= 4.5V,ID= 4.2A<br>~~ee~~<br>~~eeee~~<br><br>~~ee~~|
|||–––<br>~~ee~~<br>~~| ~~|0.050<br>~~ee~~<br> ~~|~~|0.080<br>~~ee~~<br>~~| ~~||VGS= 2.5V,ID= 3.6A<br>~~ee~~<br>~~eeee~~<br> ~~ee~~<br>~~ee~~|
|VGS(th)<br>~~Oe~~|Gate Threshold Voltage<br>~~|~~<br>~~Oe~~|0.60<br>~~| ~~<br>~~Oe~~|–––<br> <br>~~Oe~~|1.2<br><br>~~Oe~~|V<br><br>~~Oe~~|VDS= VGS, ID= 250μA<br>~~ee ee~~<br><br>~~ee~~<br>~~Oe~~|
|GS(th)<br>ΔVGS(th)<br>~~Oe~~<br>~~eG~~<br>~~ee~~|Gate Threshold Voltage Coefficient<br>~~Oe~~<br>~~eG~~|–––<br>~~Oe~~<br>~~eG~~|-3.2<br>~~Oe~~<br>~~eG~~<br>~~Qe~~|–––<br>~~Oe~~<br>~~eG~~<br>~~OO~~|mV/°C<br>~~Oe~~<br>~~eG~~<br>~~OO~~||
|GS(th)<br>gfs<br>~~Oe~~<br>~~eG~~<br>~~QO~~<br>~~ee~~|Forward Transconductance<br>~~Oe~~<br>~~eG~~<br>~~QO~~<br>~~ee~~|5.8<br>~~Oe~~<br>~~eG~~<br>~~QO~~<br>~~ee~~|–––<br>~~Oe~~<br>~~eG~~<br>~~QO~~<br>~~Qe~~<br>~~ee~~|–––<br>~~Oe~~<br>~~eG~~<br>~~QO~~<br>~~OO~~<br>~~e~~~~**e**~~|S<br>~~Oe~~<br>~~eG~~<br>~~QO~~<br>~~OO~~<br>~~**e**~~|VDS= 10V,ID= 4.0A<br>~~Oe~~<br>~~QO~~|
|IDSS<br>~~QO~~<br>~~ee~~|Drain-to-Source Leakage Current<br>~~QO~~<br>~~ee~~|–––<br>~~QO~~<br>~~ee~~<br>~~PT~~|–––<br>~~QO~~<br>~~Qe~~<br>~~ee~~<br>~~PT~~|1.0<br>~~QO~~<br>~~OO~~<br>~~e~~~~**e**~~<br>~~PT~~|μA<br>~~QO~~<br>~~OO~~<br>~~**e**~~<br>|VDS= 16V,VGS= 0V<br>~~QO~~<br>~~ee~~<br>|
|||–––<br>~~ee~~<br>~~PT~~|–––<br>~~Qe~~<br>~~ee~~<br>~~PT~~|25<br>~~OO~~<br>~~e~~~~**e**~~<br>~~PT~~||VDS= 16V,VGS= 0V,TJ= 70°C<br>~~ee~~<br>~~PO~~|
|IGSS<br>~~ee~~<br>~~Oo~~<br>~~Ps~~|Gate-to-Source Forward Leakage<br>~~ee~~<br>~~Oo~~<br>|–––<br>~~ee~~<br>~~PT~~<br>~~Oo~~<br>~~a~~<br>|–––<br>~~Qe~~<br>~~ee ~~<br>~~PT~~<br>~~Oo~~<br>~~ee~~<br>|100<br>~~OO~~<br> ~~e~~~~**e**~~<br>~~PT ~~<br>~~Oo~~<br>~~ee~~<br>|nA<br>~~OO~~<br>~~**e**~~<br> <br>~~Oo~~<br>~~ee~~|VGS= 12V<br>~~ee~~<br> ~~PO~~<br>~~Oo~~|
||Gate-to-Source Reverse Leakage<br>~~Oo~~<br>|–––<br>~~Oo~~<br>~~a~~<br>|–––<br>~~Oo~~<br>~~ee~~<br>|-100<br>~~Oo~~<br>~~ee~~<br>||VGS= -12V<br>~~Oo~~|
|Qg<br>~~Oo~~<br>~~Ps~~<br>~~es~~|Total Gate Charge<br>~~Oo~~<br>~~**es**~~|–––<br>~~Oo~~<br>~~a~~<br>~~**es**~~|8.0<br>~~Oo~~<br>~~ee~~<br>~~**es**~~|12<br>~~Oo~~<br>~~ee~~<br>~~**es**~~|nC<br>~~Oo~~<br>~~ee~~|VDS= 10V<br>VGS= 5.0V<br>ID= 4.0A<br>~~Oo~~|
|g<br>Qgs<br>~~Ps~~<br>~~es~~|Gate-to-Source Charge<br>~~**es**~~|–––<br>~~a~~<br>~~**es**~~|1.8<br>~~ee~~<br>~~**es**~~|2.7<br>~~ee~~<br>~~**es**~~|||
|gs<br>Qgd<br><br>~~es~~<br>~~eG~~<br>~~PR~~|Gate-to-Drain("Miller")Charge<br>~~**es**~~<br>~~eG~~<br>|–––<br>~~**es**~~<br>~~eG~~<br>|1.7<br>~~**es**~~<br>~~eG~~<br>|2.6<br>~~**es**~~<br>~~eG~~<br>|||
|gd<br>td(on)<br>~~eG~~<br>~~PR~~|Turn-On DelayTime<br>~~eG~~<br>|–––<br>~~eG~~<br>|7.5<br>~~eG~~<br>|–––<br>~~eG~~<br>|ns|RD= 10Ω<br>RG= 6Ω<br>ID= 1.0A<br>VDD= 10V|
|d(on)<br>tr<br>~~PRse~~<br>~~es~~<br>~~ee~~|Rise Time<br>~~se~~<br>~~es~~|–––<br>~~se~~<br>~~es~~<br>~~ee~~|10<br>~~se~~<br>~~es~~|–––<br>~~se~~<br>~~es~~|||
|td(off)<br>~~es~~<br>~~ee~~|Turn-Off DelayTime<br>~~es~~|–––<br>~~es~~<br>~~ee~~|54<br>~~es~~|–––<br>~~es~~|||
|d(off)<br>tf<br>~~es~~<br>~~ee~~<br>~~ee~~|Fall Time<br>~~es~~<br>~~Se~~|–––<br>~~es~~<br>~~ee~~<br>~~Se~~|26<br>~~es~~<br>~~Se~~|–––<br>~~es~~<br>~~Se~~|||
|Ciss<br>~~ee~~<br>~~ee~~|Input Capacitance<br>~~Se~~|–––<br>~~ee~~<br>~~Se~~|740<br>~~Se~~|–––<br>~~Se~~|pF|ƒ= 1.0MHz<br>VGS= 0V<br>VDS= 15V|
|Coss<br>~~ee~~<br>~~se~~<br>~~es~~|Output Capacitance<br>~~Se~~<br>~~se~~<br>~~es~~|–––<br>~~Se~~<br>~~se~~<br>~~es~~<br>~~ee~~|90<br>~~Se~~<br>~~se~~<br>~~es~~<br>~~ee~~|–––<br>~~Se~~<br>~~se~~<br>~~es~~|||
|Crss<br>~~es~~|Reverse Transfer Capacitance<br>~~es~~|–––<br>~~es~~<br>~~ee~~|66<br>~~es~~<br>~~ee~~|–––<br>~~es~~|||



## **Source-Drain Rating and Characteristics** 

||**Parameter**|**Min.**|**Typ.**|**Max.**|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|IS|Continuous Source Current<br>(Body Diode)|–––|**Typ.**<br>–––|1.3|A|S<br>D<br>G<br>MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.|
|ISM|Pulsed Source Current<br>(Body Diode)|–––<br>~~GO~~|–––<br>~~QD~~|33<br>~~Os~~|||
|VSD<br>~~ees~~|(Body Diode)<br>Diode Forward Voltage<br>~~ees~~|–––<br>~~ees~~<br>~~GO~~|–––<br>~~ees~~<br>~~QD~~|1.2<br>~~ees~~<br>~~Os~~|V<br>~~ees~~|TJ= 25°C,IS= 1.3A,VGS= 0V<br>pn junction diode.<br>~~ees~~|
|trr<br>~~Ce~~<br>~~es~~|Reverse RecoveryTime<br>~~Ce~~|–––<br>~~GO ~~<br>~~Ce~~|16<br> ~~QD~~<br>~~Ce~~|24<br>~~Os~~|ns|TJ= 25°C, IF= 1.3A<br>di/dt = 100A/μs|
|Qrr<br>~~es~~|Reverse RecoveryCharge|–––|8.6|13|nC||



® Repetitive rating;  pulse width limited by max. junction temperature. ( See fig. 11 ) 

Surface mounted on FR-4 board, ≤ 

Pulse width ≤ 300μs; duty cycle ≤ 

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 100  100<br>VGS VGS<br>TOP 7.00V TOP 7.00V<br>5.00V 5.00V<br>4.50V a| 4.50V<br>3.50V3.00V a| 3.50V3.00V a<br>2.70V 2.70V<br>2.50V 2.50V<br>BOTTOM 2.25V Vee FA BOTTOM 2.25V HPA<br>Jae 2.25V<br>2.25V<br>We lll | ASEMW  Zar am ||||<br> 10 ype at  10 —i<br>Fae eee aT ye<br>77//Qe| my /A<br>AS yy<br>20μs PULSE WIDTH 20μs PULSE WIDTH<br>tee T  = 25J °C Ae T  = 150J °C<br> 1  1<br>0.1  1  10  100 0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br> 100 2.0<br>ee SSP|P| ft | tT tT tleetleeeetleetleeee ee ee Pee ID = 4.0A ETE<br>a ee EEE EL<br>1.5<br>|<br>eee EEE ee]<br>SEGEEParan T  = 25  CJJ ° 1.0 LAT<br>| A AT T  = 150  CJJ ° ATUTLL<br>eo 0.5 FETE<br> 10 al V      = 15V20μs PULSE WIDTHDS20μs PULSE WIDTHDSDS 0.0 rPLELELEEEELELELELEEL VGS = 4.5V<br>2.0 2.4 2.8 3.2 3.6 4.0 -60 -40 -20T  , Junction TemperatureJ 0 20 40 60 80 100(  C)°120 140 160<br>D D<br>I   ,  Drain-to-Source Current (A) I   ,  Drain-to-Source Current (A)<br>(Normalized)<br>D<br>I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


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 100 ee SSP|P| ft | tT tT tleetleeeetleetleeee ee ee<br>a ee<br>eee<br>T  = 25  CJJ °<br>SEGEEParan<br>| A AT °<br>T  = 150  CJJ<br>eo<br>al V      = 15V20μs PULSE WIDTHDS20μs PULSE WIDTHDSDS<br> 10<br>2.0 2.4 2.8 3.2 3.6 4.0<br>V     , Gate-to-Source Voltage (V)GS<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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1200 10<br>VGS = 0V, f = 1MHz ID = 4.0A<br>1000 C CC iss rssoss = == C CC gs gdds + C + C gd , gd C      SHORTEDds 8 V DS = 10V<br>Ht | | | |<br>800 a C iss Pf A<br>ee ll 6 d<br>600<br>4<br>400 SHrrr rh |  EERETIS<br>Aee| el 2 a—~2<br>200<br>Coss<br>SSS f7| | | | | |<br>rot Crss == Col 40<br>0 0<br> 1  10  100 0 4 8 12 16<br>V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)G<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 100  1000<br>OPERATION IN THIS AREA LIMITED<br>BY RDS(on)<br> 100<br>SEE cet rt<br> 10<br>T  J = 150  C°<br>10us<br>poSeff Aa  10 aiAellamcat a<br>100us<br> 1 1ms<br>T  = 25  CJ °  1<br> T  T AJ = = 150  C  25  C° ° 10ms<br>0.1 ATA| f | fF | | Pt | fT V      = 0 V  [ GS | | 0.1 |  Single Pulse HERECClCOC<br>0.4 0.6 0.8 1.0 1.2 1.4 0.1  1  10  100<br>V     ,Source-to-Drain Voltage (V)SD V     , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


## **Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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4.0 PN EEE<br>3.0 PPEPELE ENEEE<br>2.0<br>pipetING<br>See<br>PELE<br>1.0<br>PEt [iT] [yA] EL TAN<br>PEt<br>0.0 yy<br>25 50 75 100 125 150<br>T   , Case TemperatureC (  C)°<br>Fig 9.   Maximum Drain Current Vs.<br>Case Temperature<br> 1000<br> 100<br>Ey ee eT eeeee<br>D = 0.50<br>0.20<br>0.10<br> 10<br>0.05<br>P DM<br>0.02 or<br>0.01 t1<br> 1 SINGLE PULSE t2<br>(THERMAL RESPONSE)<br>Notes:<br>1. Duty factor D = t   / t 1 2<br>rn en ee 2. Peak T J = P DM x  Z thJA + TA<br>0.1<br>0.00001 0.0001 0.001 0.01 0.1  1  10<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 10.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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0.05 0.30 |ft<br>VGS = 2.5V<br>0.04 0.20<br>re ee<br>ft<br>Id = 4.0A<br>0.03 0.10 ee<br>VGS = 4.5V<br>a<br>0.02 0.00 FT<br>2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 10 20 30 40<br>VGS, Gate -to -Source Voltage  ( V ) iD , Drain Current ( A )<br> )<br>Ω<br> ) RDS ( on ) , Drain-to-Source On Resistance (<br>Ω<br>RDS(on) ,  Drain-to -Source Voltage (<br>**----- End of picture text -----**<br>


**Fig 11.** On-Resistance Vs. Gate Voltage 

**Fig 12.** On-Resistance Vs. Drain Current 

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**----- Start of picture text -----**<br>
1.3<br>1.1<br>RUE<br>0.9<br>RMIT<br>0.7<br>ID = 50μA<br>ID = 250μA<br>ELENA<br>0.5<br>-75 -50 -25 0 25 50 75 100 125 150<br>TJ , Temperature ( °C )<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 13.** Threshold Voltage Vs. Temperature 

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DIMENSIONS<br>6 A 5 MILLIMETERS INCHES<br>A D Pr SYMBOL MIN MAX MIN MAX<br>ee ee<br>A 0.035 A 0.89 1.12 0.04 |<br>7 oA A2 C ; A1 0.01 fF 0.10 0.0004<br>3 E A2 0.88 1.02<br>6 ios E1 ae 1 ie 2 0.15 [0.006] M C B A t 0.10 [0.004] 0 C tees bc 0.300.08 0.500.20 rene<br>ep o e A1 ] 4h= 3X b Efotto D 2.80 3.04 tae Fons<br>Au 5 B O+ e io4 e1 | NOTES: @ 0.20 [0.008] —orn M C B A 0.0830.087 E1E 1.202.10 1.402.64 | 0.1200.104 ||<br>0.055 |<br>0.037 e 0.95 BSC<br>asc<br>0.075 e1 1.90 BSC<br>asc<br>0.016 L 0.40 0.60<br>H AU 4 R L1 Recommended Footprint es L1 0.54 REF [0.024 REF |<br>L2 0.25 BSC BSC<br>5 | c 0.972 ee eseX 0 8 0 8<br>o n i [ L2 nn 0.802 eines 1 0.950 2.742<br>3X L 1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994<br>2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>“  7 TA fa 3. CONTROLLING DIMENSION: MILLIMETER.4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.<br>_ 1.900 5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.<br>A 6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES<br>  NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS<br>  OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.<br>A 7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.<br>8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.<br>**----- End of picture text -----**<br>


## Micro3 (SOT-23/TO-236AB) Part Marking Information 

Notes: This part marking information applies to devices produced after 02/26/2001 

||||||||W =  (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|W =  (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|W =  (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|W =  (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|W =  (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|W =  (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
||DATE CODE<br>PART NUMBER<br>~~\o~~<br>XYWLC|||||LEAD FREE|Y<br>1<br>2001<br>YEAR<br>2002<br>2<br>WORK<br>WEEK<br>01<br>02<br>A<br>W<br>B<br>~~oo~~||||||
||||||||2003|3|03||C||
||Cu WIRE<br>HALOGEN FREE|||LOT CODE|||2005<br>2004<br>2006|5<br>4<br>6|04||D||
|X =  PART NUMBER CODE REFERENCE:|X =  PART NUMBER CODE REFERENCE:|X =  PART NUMBER CODE REFERENCE:|||||2007|7|||||
||A =  IRLML2402||||||2008|8|||||
||B =  IRLML2803||||||2010<br>2009|0<br>9|24||X||
||C =  IRLML6302||||||||25||Y||
||D =  IRLML5103||||||||26||Z||
||E =  IRLML6402||||||||||||
||F =  IRLML6401||||||W =  (27-52) IF PRECEDED BY A LETTER||||W =  (27-52) IF PRECEDED BY A LETTER||
||G =  IRLML2502||||||||WORK||||
||H =  IRLML5203||||||YEAR|Y|WEEK||W||
||I  =  IRLML0030||||||2001|A|27||A||
||J =  IRLML2030||||||2002|B|28||B||
||K =  IRLML0100||||||2003|C|29||C||
||L =  IRLML0060||||||2005<br>2004|E<br>D|30||D||
||M =  IRLML0040||||||2006|F|||||
||N =  IRLML2060||||||2007|G|||||
||P =  IRLML9301||||||2008|H|||||
||R =  IRLML9303||||||2009|J|||||
||||||||2010|K|50||X||



Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 

www.irf.com 

7 

## ™ 

**==> picture [383 x 289] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.05 ( .080 )1.95 ( .077 ) 4 - 4.1 ( .161 ) d 1.6 ( .062 )1.5 ( .060 ) 1.85 ( .072 ) 1.32 ( .051 )1.12 ( .045 )<br>3.9 ( .154 ) 1.65 ( .065 )<br>60 TR 6eoo8 6 O44. 3.55 ( .139 ) 8.3 ( .326 )<br>3.45 ( .136 )<br>7.9 ( .312 )<br>VEEIRIE eet<br>FEED DIRECTION 4.1 ( .161 )<br>3.9 ( .154 ) 1.1 ( .043 ) 0.35 ( .013 )<br>0.9 ( .036 ) 0.25 ( .010 )<br>  178.00<br>( 7.008 )<br>    MAX.<br>9.90 ( .390 )<br>aN 8.40 ( .331 ) a} | =<br>**----- End of picture text -----**<br>


**==> picture [143 x 20] intentionally omitted <==**

**----- Start of picture text -----**<br>
NOTES:<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>2.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>**----- End of picture text -----**<br>


**Note: For the most current drawing please refer to IR website at http://www.irf.com/package** 

Data and specifications subject to change without notice. 

**IR WORLD HEADQUARTERS:** 101N.Sepulveda blvd, El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 09/2012 

www.irf.com 

8 



## Links

- [View this product on Novapart](https://novapart.co/products/IRLML2502GTRPBF/power-mosfet-n-channel-20-v-42-a-0035-ohm-sot-23)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/infineon/irlml2502gtrpbf/mosfet-n-ch-20v-4-2a-sot-23/dp/2726007)
---

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