# Power MOSFET, N Channel, 20 V, 1.2 A, 0.25 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:9102710RL/)

**URL**: https://novapart.co/products/IRLML2402TRPBF/power-mosfet-n-channel-20-v-12-a-025-ohm-sot-23
**SKU**: IRLML2402TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1130
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:1.2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.25ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:700mV; Power Di

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | To Be Advised |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 540mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 1.2A |
| Drain Source On State Resistance | 0.25ohm |
| Gate Source Threshold Voltage Max | 700mV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:9102710RL/)

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G 1<br>Voss = 20V<br>3 D<br>S 2 _<br>Rpg(on) = 9.25 Ω<br>~<br>Micro3 ™<br>**----- End of picture text -----**<br>


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Standard Pack<br>Base Part  Number Package Type  Orderable Part Number<br>Form Quantity<br>IRLML2402TRPbF Micro3 ™ (SOT-23) Tape and Reel 3000 IRLML2402TRPbF<br>**----- End of picture text -----**<br>


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||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Vienoss|_|||Drain-to-Source|Breakdown|Votlage|||20||——|-—||V_||Ves=|OV,|lo|=|250HA|
|Δ|Δ|

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~~Ω~~ 

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D<br>G<br>S<br>**----- End of picture text -----**<br>


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100  TOP           7.5V ves<br>                   5.0V ees a rres<br>                   4.0V<br>                   3.5V<br>                   3.0V ee<br>                   2.5V<br>10                    2.0V BOTTOM   1.5V 200<br>ee ee<br>1<br>| GO|<br>EE eet<br>0.1 a<br>1.5V<br> T   = 25°CJ<br>0.01 PT<br>0.1 fon niil 1 Masia 10<br>V     , Drain-to-Source Voltage (V)DS<br>Fig 1. Typical Output Characteristics<br>10 [|_|]<br>T  = 25°CJ<br>=———ee ee aee eee —eee<br>T  = 150°CJ<br>nn a a<br>1<br>|p we}<br>—————————<br>if YY | | {[ {| [ [| fT ff<br>Vf<br>0.1<br>if | | |<br>=<br>SeSSSee ee ee eee eee eee<br>eeee<br> V     = 10V DS<br>0.01 PTT TT oye purse wiored<br>1.5 2.0 2.5 3.0 3.5 4.0<br>V     , Gate-to-Source Voltage (V)GS<br>I   , Drain-to-Source Current (A)D<br>D<br>I   , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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100 VS<br> TOP           7.5V                    5.0V eeees<br>                   4.0V<br>                   3.5V ee<br>                   3.0V<br>                   2.5V<br>10                    2.0V 2<br> BOTTOM   1.5V<br>| | | EF<br>1 a 2el<br>1.5V<br>Zajennssll omgeees<br>0.1 err Co<br> T   = 150°CJ<br>0.01 PT TT<br>0.1 EE 1 10<br>V     , Drain-to-Source Voltage (V)DS<br>Fig 2. Typical Output Characteristics<br>2.0 P nl == 0.93AEEL<br>PERE<br>1.5<br>TTTEEL Ler EEL<br>pr<br>1.0 = aT<br>Oe<br>anal<br>0.5 PEEEEE EEE EEE EE<br>0.0 PEE  Ey sy<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>T   , Junction Temperature (°C)J<br>I   , Drain-to-Source Current (A)D<br>(Normalized)<br>DS(on)<br>R           ,  Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


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200<br>V      = 0V,         f = 1MHzGS<br>C      = C     + C     ,   C     SHORTED iss         gs         gd         ds<br>C      = Crss         gd<br>160 ||| C      = C     + Coss        ds         gd<br>. s<br>eT<br>120<br>a ss ee |<br>i |<br>80<br>SAH \<br>ss<br>40<br>PSS tt<br>0 Pt<br>1 10 100<br>V     , Drain-to-Source Voltage (V)DS<br>Fig 5. Typical Capacitance Vs.<br>Drain-to-Source Voltage<br>10<br>T  = 150°CJ<br>1<br>Sanne) 620008y,<br>T  = 25J ° C<br>0.1 FEETae n/a eeeSSE<br>oo<br>0.01 ee poe Ae)P|oe | ow A<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>V     , Source-to-Drain Voltage (V)SD<br>C, Capacitance (pF)<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


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10<br> I    = 0.93AD<br> V     = 16V  DS<br>Sf<br>8<br>SA<br>6<br>pot |<br>aaa<br>4<br>San<br>2<br>To<br>    SEE FIGURE 9<br>0 fy  || ee<br>0.0 1.0 2.0 3.0 4.0<br>Q   , Total Gate Charge (nC)G<br>GS<br>V     , Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


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100<br> OPERATION IN THIS AREA LIMITED<br>                       BY RDS(on)<br>10<br>io 20ZL<br>100μs<br>1 S SSPE ttCOT<br>1ms<br>Seems eatas 10m eae s<br>0.1 Frieh  Single Pulse llmani<br>1 10 100<br>V     , Drain-to-Source Voltage (V)DS<br>I   , Drain Current (A)D<br>**----- End of picture text -----**<br>


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c e QG<br>QGS QGD<br>es<br>VG<br>Charge<br>**----- End of picture text -----**<br>


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+<br>-<br>≤ 1  ys<br>≤ 0.1 %<br>**----- End of picture text -----**<br>


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Current Regulator<br>Same Type as D.U.T.<br>|<br>| | VDS<br>! 50K Ω | 90%<br>12V .2 μ F<br>.3 μ F<br>LEU + |<br>tL D.U.T. -VDS |<br>10%<br>VGS VGS /\<br>3mA 7 t \« d(on) >< tr >| t a d(off) e tf<br>5<br>IG ID<br>Current Sampling Resistors<br>Fig 9b. Gate Charge Test Circuit Fig 10b. Switching Time Waveforms<br> 1000<br>PTTy<br>EE—E—————— EEE<br>D = 0.50<br> 100 DeSer. a ll<br>0.20<br>nee 0.10 erm nas See |<br>a —— Ss<br>0.05<br> 10<br>0.02<br>0.01 PDM<br>ek SINGLE PULSE t1<br> 1 PeerTn (THERMAL RESPONSE) t2<br>EEEerte 1. Duty factor D =Notes: t   / t1 2<br>a ee ee 2. Peak T J = P DM x  Z thJA + TA<br>0.1<br>0.00001 0.0001 0.001 0.01 0.1  1  10  100<br>t  , Rectangular Pulse Duration (sec)1<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


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D.U.T + Circuit Layout Considerations<br>™    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| - Current Transformer<br>+<br>- - +<br>00<br>®<br>Re •   dv/dt controlled by Rg +<br>•   Driver same type as D.U.T. -<br>•<br>•   D.U.T. - Device Under Test<br>(1) Isp controlled by Duty Factor "D"<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. Period<br>—— | 7<br>t<br>VGS=10V<br>t<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current "| Current di/dt a<br>©) D.U.T. VDS Waveform<br>Diode Recovery<br>dv/dt<br>VDD<br>Re-Applied<br>Voltage Body Diode  __ Forward Drop ma<br>® Inductor Curent VW<br>Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


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O 6 D n e) 5 | MBOSYL  EJ MILLIMETERSMIN MAXDIMENSIONSMININCHESMAX<br>A 0.89 1.12 .036 .044<br>A1 0.01 0.10 .0004 .0039<br>Zz —— A2 0.88 1.02 .035 .040<br>[jy 3 | E1 10 6 E ———a bc 0.300.08 0.500.20 .0119.0032 .0196.0078<br>1 2 ccc C B A D 2.80 3.04 .111 .119<br>E 2.10 2.64 .083 .103<br>Lee] PP E1 1.20 1.40 .048 .055<br>e 0.95 BSC .0375 BSC<br>e : Tt B 5 —— e1 1.90 BSC .075 BSC<br>e1 a L1L 0.400.25 BS C0.60 .0158.0118 BSC.0236<br>——— 0 0° 8° 0° 8°<br>aaa 0.10 .004<br>bbb 0.20 .008<br>— ccc 0.15 — .006<br>4 H<br>mor A A2 CARN<br>L1<br>A1 3X bbbb C A B OO 3 S URFaaa C =. 0<br>O 7 3X L . c ar a<br>RECOMMENDED FOOTPRINT<br>NOTES<br>3X [.038]0.972 1.  DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994.2.  DIMENSIONS ARE SHOWN IN MILLIMETERS AND INCHES.<br>“f a 4 3.  CONTROLLING DIMENSION: MILLIMETER.<br>[.1079]2.742 4   DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.5   DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.<br>6   DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H.<br>7   DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.<br>8.  OUTLINE CONFORMS TO JEDEC OUTLINE TO-236AB.<br>[.0375]0.95 3X     0.802     [.031]<br>1.90<br>[.075] ca L<br>**----- End of picture text -----**<br>


## Micro3 (SOT-23 / TO-236AB)  Part Marking Information 

Notes: This part marking information applies to devices produced after 02/26/2001 

|DATE CODE||||W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|
|---|---|---|---|---|---|---|---|---|---|---|---|
|PART NUMBER||||LEAD-FREE|YEAR||Y|WORK<br>WEEK||W||
||||||2011|2001|1|01||A||
||||||2012|2002|2|02||B||
||||||2013|2003|3|03||C||
|Cu WIRE<br>HALOGEN FREE||||ASSEMBLY LOT CODE|2015<br>2014<br>2016|2005<br>2004<br>2006|5<br>4<br>6|04||D||
|X = PART NUMBER CODE REFERENCE:|||||2017|2007|7|||||
|B = IRLML2803<br>A = IRLML2402||||T = IRLML6246<br>S = IRLML6244|2018<br>2020<br>2019|2008<br>2010<br>2009|8<br>0<br>9|24||X||
|C = IRLML6302||||U = IRLML6344||||25||Y||
|D = IRLML5103||||V = IRLML6346||||26||Z||
|E = IRLML6402||||W = IRFML8244||||||||
|F = IRLML6401||||X = IRLML2244|W = (27-52) IF PRECEDED BY A LETTER||||W = (27-52) IF PRECEDED BY A LETTER|||
|G = IRLML2502||||Y = IRLML2246||||WORK||||
|H = IRLML5203||||Z = IRFML9244|YEAR||Y|WEEK||W||
|I  = IRLML0030|||||2011|2001|A|27||A||
|J = IRLML2030|||||2012|2002|B|28||B||
|K = IRLML0100|||||2013|2003|C|29||C||
|L = IRLML0060|||||2015<br>2014|2005<br>2004|E<br>D|30||D||
|M = IRLML0040|||||2016|2006|F|||||
|N = IRLML2060||||DATE CODE EXAMPLE:|2017|2007|G|||||
|P = IRLML9301||||YWW = 432 = DF|2018|2008|H|||||
|R = IRLML9303||||YWW = 503 = 5C|2019|2009|J|||||
||||||2020|2010|K|50||X||
|||||||||51||Y||
|||||||||52||Z||



**Note: For the most current drawing please refer to IR website at http://www.irf.com/package** 

## ™ 

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**----- Start of picture text -----**<br>
2.05 ( .080 )1.95 ( .077 ) 4 F 4.1 ( .161 ) g 1.6 ( .062 )1.5 ( .060 ) 1.85 ( .072 ) 1.32 ( .051 )1.12 ( .045 )<br>3.9 ( .154 ) 1.65 ( .065 )<br>60 TR 66 6 6. 6 of,— 3.55 ( .139 ) | 8.3 ( .326 )<br>3.45 ( .136 ) 7.9 ( .312 )<br>VEISRIAIEIE IE ij—<br>FEED DIRECTION 4.1 ( .161 )<br>3.9 ( .154 ) 1.1 ( .043 ) 0.35 ( .013 )<br>0.9 ( .036 ) 0.25 ( .010 )<br>  178.00<br>( 7.008 )<br>    MAX.<br>9.90 ( .390 )<br>[IX 8.40 ( .331 ) =|<br>NOTES:<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>2.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>**----- End of picture text -----**<br>


**Note: For the most current drawing please refer to IR website at http://www.irf.com/package** 

|**Qualification information**<br>†|||
|---|---|---|
|Qualification level|Consumer<br>(per JEDEC JESD47F<br>††guidelines)||
|Moisture Sensitivity Level|Micro3™(SOT-23)|MS L1<br>(per JEDEC J-STD-020D<br>††)|
|RoHS compliant|(per JEDEC J<br>)<br>Yes||



- Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability ††   Applicable version of JEDEC standard at the time of product release 

|**Date**|**Comment**|
|---|---|
|4/24/2014|•Updated data sheet with new IR corporate template.<br>•Updated package outline & part marking on page 7.<br>•Added Qualification table -Qual level "Consumer" on page 9.<br>•Added bulletpoint in the  Benefits  "RoHS Compliant,Halogen -Free" onpage 1.|



**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

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- [Supplier page](https://es.farnell.com/infineon/irlml2402trpbf/mosfet-n-logic-sot-23/dp/9102710RL)
---

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