# Power MOSFET, N Channel, 20 V, 1.2 A, 0.25 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:2726006/)

**URL**: https://novapart.co/products/IRLML2402GTRPBF/power-mosfet-n-channel-20-v-12-a-025-ohm-sot-23
**SKU**: IRLML2402GTRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2040
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Power Dissipation | 540mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 540mW |
| Rds(On) Test Voltage | 4.5V |
| On Resistance Rds(On) | 0.25ohm |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 1.2A |
| Drain Source On State Resistance | 0.25ohm |
| Gate Source Threshold Voltage Max | 700mV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2726006/)

## Halogen 

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G 1<br>Voss = 20V<br>3 D<br>S 2 Rps(on) =025 Ω<br>~<br>i<br>Micro3 ™<br>**----- End of picture text -----**<br>


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~~Viens | Drain-to-Source Breakdown Voltage | 20 [-—-[——| V_| Vos= OV, ip = 250uA~~ Δ Δ ~~a | -——| —-| 0.25 | Ω Ves = 4.5V, Ip = Vesti) | Gate Threshold Voltage ~~ 0.70] —-| —| V_| Vos= Ves, lo= 250uA Transconductanoe Gis___| Forward + 13|—-| | S| Vos= 10V, ln =O.47A ons PEetetSoure Fora tease | ——{—| 100] 4 | Ves =i [[Gate-to-Source] a, Reverse Leakage | —-| [100] _"" | Ves= 12V Gate-to-Source QgrQy___| Sotetaee Chargehaw~~ =|[otfon0.41/ 0.62] newe | Vps=ip = 088A 16V ton | Gate-to-Drain (Miler?) Charge || 1.1] 17 | _| Vos=4.V, See~~ Fig. ~~SSSSC*d RiseTime ton | 95 [==] |~~ lo ~~=0.99A~~ Ω ~~| Tum-Off Delay Time ——~—S*d~~ ti ~~=| 97 [=| ™* | Rex 62~~ Ω, ~~t~~ ~~**—** ——a oe Voo = 10V FaiTime[SSSSS~i] Ces | AB T=] | ROH Mt See Fig. Coss | Input Capacitance ~~~ | 110 —] _| Vos= OV Ciss | Output~~ Reverse ~~Capacitance~~ Transfer Capacitance ~~———~—«|~~ ——— ~~=|~~ |} ~~81~~ 25 ~~|~~ | ~~—| PF |~~ f ~~Vps=~~ =1.0MHZ, ~~15V~~ See Fig. Source-Drain Ratings and Characteristics ~~(Body Diode) A showina the (Body Diode) © p-n junction diode. | Diode Forward Voltage «| —-| =| 12 | V | T)= 25°C, lg = 0.998, Qi |~~ Reverse ~~Reverse~~ RecoveryCharge ~~Recovery Time ‘|~~ —| ~~—-| 25~~ 16} ~~38~~ 24 ~~| ns~~ nc | ~~| T)=25°C,di/dt~~ = 100A/usp= ~~0.998~~ © Notes: Repetitive rating; pulse width limited by @ Pulse width ≤ 300us; duty cycle ≤ 2%. max. junction temperature. ( See fig. 11 ) ISD ≤ 0.93A, di/dt ≤ 90A/us, Vopp ≤ Ver)pss: @® Surface mounted on FR-4 board, t ≤ 5sec. ≤ 

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100  TOP           7.5V ves<br>                   5.0V<br>                   4.0V eee) ee<br>                   3.5V<br>                   3.0V ne<br>                   2.5V<br>10                    2.0V BOTTOM   1.5V OE<br>|__|_ ooo<br>1<br>|_| |<br>eels esi<br>0.1 a<br>1.5V<br>0.01 otiPT ET  T   = 25°CJ<br>0.1 1 10<br>V     , Drain-to-Source Voltage (V)DS<br>Fig 1. Typical Output Characteristics<br>10 —_—— ee eS ee<br>T  = 25°CJ<br>ee———_—ee aee eee——eee<br>T  = 150°CJ<br>a> a a<br>1 |<br> ii7 | | |<br>SA.<br>A) ae ee ee<br>VA re<br>0.1 yf |<br>=== ===<br>ee———ee ee ee ee eee eee<br> V     = 10V DS<br>0.01 P TT T TTT seuscous purse w otson<br>1.5 2.0 2.5 3.0 3.5 4.0<br>V     , Gate-to-Source Voltage (V)GS<br>I   , Drain-to-Source Current (A)D<br>D<br>I   , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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100 vase<br> TOP           7.5V<br>                   5.0V eeees<br>                   4.0V<br>                   3.5V ee<br>                   3.0V<br>                   2.5V<br>10                    2.0V OE<br> BOTTOM   1.5V<br>Pa<br>1 |ge——<br>incisions 1.5V<br>0.1 err Co<br>0.01 KAPT  T   = 150°CJ<br>0.1 1 10<br>V     , Drain-to-Source Voltage (V)DS<br>Fig 2. Typical Output Characteristics<br>2.0 PLA Dl = 0.93A<br>1.5 PEPER<br>TEE Ee<br>PT ear<br>pr<br>1.0 et<br>Oe<br>ant<br>0.5 PEE EE  EEE EET LE<br>0.0 PEE EE ds<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>T   , Junction Temperature (°C)J<br>I   , Drain-to-Source Current (A)D<br>(Normalized)<br>DS(on)<br>R           ,  Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


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200<br>V      = 0V,         f = 1MHzGS<br>C      = C     + C     ,   C     SHORTED iss         gs         gd         ds<br>C      = Crss         gd<br>160 ||| C      = C     + Coss        ds         gd<br>S s<br>eT<br>120<br>a ss ee |<br>i |<br>80<br>St \<br>ss<br>40<br>PSS tt<br>0 Pt<br>1 10 100<br>V     , Drain-to-Source Voltage (V)DS<br>Fig 5. Typical Capacitance Vs.<br>Drain-to-Source Voltage<br>10<br>T  = 150°CJ<br>1<br>Sanne) 620008y,<br>T  = 25J ° C<br>0.1 coerae n/aa7 ceeeee<br>fee 2 eS ee oe<br>0.01 ee poe Ae)P|oe | ow A<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>V     , Source-to-Drain Voltage (V)SD<br>C, Capacitance (pF)<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


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10<br> I    = 0.93AD<br> V     = 16V  DS<br>Sf<br>8<br>SAS<br>6<br>pot |<br>aaa<br>4<br>San<br>2<br>To<br>    SEE FIGURE 9<br>0 fy  || ee<br>0.0 1.0 2.0 3.0 4.0<br>Q   , Total Gate Charge (nC)G<br>GS<br>V     , Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


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100<br> OPERATION IN THIS AREA LIMITED<br>                       BY RDS(on)<br>10<br>io 20ZL<br>100μs<br>1 SPEPNRtt<br>1ms<br>Died Pots 10ms<br>0.1 Frieh  Single Pulse llmani<br>1 10 100<br>V     , Drain-to-Source Voltage (V)DS<br>I   , Drain Current (A)D<br>**----- End of picture text -----**<br>


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QG ms<br>c e Vv Ro<br>4.5 QGS QGD Ves DUT.<br>+<br>St Ro L - Vop<br>VG<br>)+ 4.5V<br>Pulse Width ≤ 1  ys<br>Charge > Duty Factor ≤ 0.1 %<br>Fig 9a. Basic Gate Charge Waveform Fig 10a. Switching Time Test Circuit<br>Current Regulator<br>Same Type as D.U.T.<br>|<br>VDS<br>50K Ω 90%<br>| 12V .2 μ F .3 μ F | \ |<br>Soe EF D.U.T. +-VDS 10% /\ | |<br>VGS VGS<br>3mA I | t \< d(on) -< tr >| td(off) ol tf<br>OO: | KT /<br>IG ID<br>Current Sampling Resistors<br>Fig 9b. Gate Charge Test Circuit Fig 10b. Switching Time Waveforms<br> 1000<br>PTTy<br>EE—E—————— EEE<br>D = 0.50<br> 100 or<br>0.20<br>Sn 0.10 eran Se<br>a —— Ss<br>0.05<br> 10<br>0.02<br>0.01 PDM<br>eH SINGLE PULSE t1<br> 1 Caer (THERMAL RESPONSE) t2<br>PERE Notes:<br>a ee eeeee 1. Duty factor D = t   / t1 2<br>a 2. Peak T J = P DM x  Z thJA + TA<br>0.1<br>0.00001 0.0001 0.001 0.01 0.1  1  10  100<br>t  , Rectangular Pulse Duration (sec)1<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


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D.U.T + Circuit Layout Considerations<br>™    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| - Current Transformer<br>+<br>- - +<br>(0<br>®<br>Re •   dv/dt controlled by Rg +<br>•   Driver same type as D.U.T. -<br>•<br>•   D.U.T. - Device Under Test<br>(1) Isp controlled by Duty Factor "D"<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. Period<br>—— | 7<br>t<br>VGS=10V<br>t<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current "| Current di/dt a<br>©) D.U.T. VDS Waveform<br>Diode Recovery<br>dv/dt<br>VDD<br>Re-Applied<br>Voltage Body Diode  __ Forward Drop ma<br>® Inductor Curent VW<br>Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


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A 6 A A 5 Po DIMENSIONS<br>D MILLIMETERS INCHES<br>SYMBOL<br>MIN MAX MIN MAX<br>ee ee<br>1] | 0.035 A a 0.89 1.12 ee<br>3 E A1 0.01 0.10 0.0004<br>a 6 E1 p T 1 i 2 0.15 [0.006] M C B A 0.0350.0040.0 A2b 0.880.30 1.020.50 | 0.04 40<br>Ly [|]<br>Ag 5 B G e H] + | Uy | |0.110 Dc 0.082.80 0.203.04 0,003 |0.0200.008<br>a e1 0.083 E 2.10 2.64 || 0.1200.104<br>A 0.047 E1 1.20 1.40<br>A2 C H A 4 L1 0.037 e 0.95 BSC | BS0.055 |<br>c e1 1.90 BSC<br>L 0.40 0.60<br>A1 0.10 [0.004] C L2 L1 0.54 REF REF<br>3X b 3X L<br>0.20 [0.008] M C B A  7 L2 0.25 BSC BSC<br>goon A ee<br>ce 0 8 0 8<br>Recommended Footprint NOTES:<br>1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994<br>0.972 2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>3. CONTROLLING DIMENSION: MILLIMETER.<br>0.802 sttt 0.950 ] 2.742 R 5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H. 4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.<br>6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES<br>  NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS<br>  OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.<br>7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.<br>tH | : 8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.<br>I 1.900 OO A<br>**----- End of picture text -----**<br>


3. CONTROLLING DIMENSION: MILLIMETER. 

R 5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H. 4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE. 6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE. 7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE. 

: 8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB. A 

## Micro3 (SOT-23 / TO-236AB)  Part Marking Information 

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Micro3 / SOT-23 Package Marking W =  (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR<br>WORK<br>YEAR Y WEEK W<br>Y = YEAR 2001 1 01 A<br>W = WEEK 2002 2 02 B<br>PART NUMBER 2003 3 03 C<br>2004 4 04 D<br>A YW LC 2005 5<br>2006 6<br>2007 7<br>HALOGEN FREE LOT  2008 8<br> INDICATOR CODE 2009 9<br>2010 0 24 X<br>25 Y<br>26 Z<br>PART NUMBER CODE REFERENCE:<br>W =  (27-52) IF PRECEDED BY A LETTER<br>A = IRLML2402 WORK<br>B =IRLML2803 YEAR Y WEEK W<br>C = IRLML2402 2001 A 27 A<br>D = IRLML5103 20022003 BC 2829 BC<br>E = IRLML6402 2004 D 30 D<br>F = IRLML6401 2005 E<br>G = IRLML2502 2006 F<br>H = IRLML5203 20072008 GH<br>2009 J<br>Note: A line above the work week 2010 K 50 X<br>(as shown here) indicates Lead-free   51 Y<br>52 Z<br>**----- End of picture text -----**<br>


**Note: For the most current drawing please refer to IR website at http://www.irf.com/package** 

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## ™ 

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2.05 ( .080 )1.95 ( .077 ) 4 5 4.1 ( .161 ) d 1.6 ( .062 )1.5 ( .060 ) 1.85 ( .072 ) 1.32 ( .051 )1.12 ( .045 )<br>3.9 ( .154 ) 1.65 ( .065 )<br>t e [ -<br>60 TR eeoev eoG— 3.55 ( .139 ) t 8.3 ( .326 )<br>3.45 ( .136 )<br>7.9 ( .312 )<br>VEE TIRE Iei—\<br>FEED DIRECTION 4.1 ( .161 )<br>3.9 ( .154 ) 1.1 ( .043 ) 0.35 ( .013 )<br>0.9 ( .036 ) 0.25 ( .010 )<br>  178.00<br>( 7.008 )<br>    MAX.<br>9.90 ( .390 )<br>IX 8.40 ( .331 ) =<br>**----- End of picture text -----**<br>


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NOTES:<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>**----- End of picture text -----**<br>


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2.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>**----- End of picture text -----**<br>


**Note: For the most current drawing please refer to IR website at http://www.irf.com/package** 

Data and specifications subject to change without notice. 

**IR WORLD HEADQUARTERS:** 101N.Sepulveda Blvd, El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 12/2011 

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- [Supplier page](https://es.farnell.com/en-ES/infineon/irlml2402gtrpbf/mosfet-n-ch-20v-1-2a-sot-23/dp/2726006)
---

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